A high-order topological insulator circuit design method based on graphdiyne structure
CN117436396BActive Publication Date: 2026-08-28UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information
- Application Number
- CN202311333898.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-16
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2043-10-16
AI Technical Summary
Benefits of technology
[0032]本发明提供了一种构建石墨炔结构的二维二阶拓扑绝缘体的新方式,对后续石墨炔新型材料的制备和高阶拓扑绝缘的相关研究提供一些参考和先例。到目前为止,关于二阶拓扑绝缘体的研究主要在人造的周期性系统中进行了探索。在二维尺度上,确定的真实材料更少,这对后续研究提出了挑战。石墨炔电路可以通过调节电路参数来便捷地调整石墨炔内部耦合方式以观测其拓扑性质随结构的变化规律。本发明实现的实例中,可以清晰地看到拓扑角态局域在菱形状电路板的钝角或者锐角区域,表现出明显的高阶拓扑性质。
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Abstract
The application belongs to the technical field of electronic circuits, and particularly relates to a high-order topological insulator circuit design method based on graphdiyne structure. The method comprises the following steps: (1) establishing an LC circuit model of a two-dimensional rhombus-shaped graphdiyne structure; (2) obtaining the admittance matrix of the circuit according to the Kirchhoff equation, solving the matrix eigenvalues and eigenvectors by using MATLAB, and obtaining the admittance band structure; (3) changing the size of the capacitance proportion parameter, so that the topological phase transition of the circuit system can be realized; (4) in the topological non-trivial phase parameter region, the impedance distribution under different frequencies is calculated, and it can be observed that the system has zero energy angle state, i.e. second-order topological state; (5) the impedance distribution under a specific frequency is measured, and it is observed in the experiment that the topological angle state is localized in the obtuse angle or acute angle region of the rhombus-shaped circuit board, and the system has high-order topological properties.
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