An ultrahigh vacuum atomic layer deposition system

Abstract

The application relates to the technical field of atomic layer deposition, and discloses an ultrahigh vacuum atomic layer deposition system which comprises a support outer frame, a precursor source bottle, a valve control gas path system, a deposition cavity, an ultrahigh vacuum transfer cavity, a sample holder and a vacuum pumping system, the precursor source bottle is installed on the support outer frame, the output end of the precursor source bottle is connected with the input end of the valve control gas path system, the output end of the valve control gas path system is connected with the gas inlet of the deposition cavity, the gas outlet of the deposition cavity is connected with the input end of the vacuum pumping system, the deposition cavity and the ultrahigh vacuum transfer cavity are arranged vertically and are in communication with each other, and the top of the ultrahigh vacuum transfer cavity is provided with a fixing sleeve; the application has the advantages of being capable of depositing and transferring samples in an ultrahigh vacuum environment, and the whole system has a small size; the special-structure sample holder used in the application is matched with the deposition cavity to realize the deposition of the small-content-volume deposition cavity, the efficiency is improved, and the function of isolating vacuum is met.

Description

Technical Field

[0001] This invention relates to the field of atomic layer deposition, and more specifically, to an ultra-high vacuum atomic layer deposition system. Background Technology

[0002] Atomic Layer Deposition (ALD) is a thin film deposition technique that enables extremely precise thickness control of composite materials deposited on substrates. ALD typically involves alternately applying two or more precursor molecules to the substrate. The substrate surface is first exposed to a first precursor molecule atmosphere, with a process distance between the two materials. The substrate surface reacts chemically with the first precursor, and because this reaction is inherently self-limiting, the first precursor uniformly covers the substrate, forming a monomolecular coating. Subsequently, the coated substrate is placed in a second precursor molecule atmosphere. The newly introduced second precursor molecules react chemically with the previously coated first precursor surface to form the desired compound. Again, because the coating process is self-limiting, the resulting compound is also a uniform monolayer covering the material surface. Since each compound layer is only a few angstroms thick, extremely precise thin film thickness control can be achieved by repeating this process several times.

[0003] Based on the physical principles of ALD deposition, ALD technology has inherent advantages over other thin film deposition techniques, enabling the preparation of high-purity, high-density, and high-flatness thin films, leading to its widespread application in the semiconductor industry and materials research. Currently, conventional ALD equipment typically loads the substrate material under atmospheric or inert atmospheres, and also removes the sample under atmospheric or inert atmospheres after deposition. This process is significantly affected by contamination from suspended hydrocarbons, dust, and oxidation in atmospheric or inert atmospheres, limiting its application in research on clean surfaces and highly surface-sensitive materials. With advancements in science and technology, offline or online analytical methods are widely used in semiconductor, catalysis, and surface science research to assess the quality of prepared thin film samples. Many of these methods, such as X-ray photoelectron spectroscopy and electron microscopy, are surface-sensitive characterization techniques. Surface contamination of the prepared thin film significantly impacts characterization quality, and these techniques often require the sample to be placed in an ultra-high vacuum environment. These requirements for cleanliness and ultra-high vacuum environments in both thin film preparation and testing processes significantly limit the application of current ALD deposition systems. Summary of the Invention

[0004] This invention provides an ultra-high vacuum atomic layer deposition system, which solves the technical problem that it is impossible to achieve sample deposition and transfer in an ultra-high vacuum environment in related technologies.

[0005] This invention provides an ultra-high vacuum atomic layer deposition system, including a support frame, a precursor source bottle, a valve-controlled gas path system, a deposition chamber, an ultra-high vacuum transfer chamber, a sample holder, and a vacuum system. The precursor source bottle is mounted on the support frame, and its output end is connected to the input end of the valve-controlled gas path system. The output end of the valve-controlled gas path system is connected to the inlet of the deposition chamber, and the outlet of the deposition chamber is connected to the input end of the vacuum system. The deposition chamber and the ultra-high vacuum transfer chamber are arranged vertically and are interconnected. A fixing sleeve is installed on the top of the ultra-high vacuum transfer chamber, and the sample placement end of the sample holder is located inside the fixing sleeve. A linear actuator is installed on one side of the fixing sleeve. The linear actuator is used to drive the sample placement end of the sample holder to switch between a deposition position and a transfer position. The deposition position is when the sample placement end of the sample holder is in the deposition chamber for atomic layer deposition, and the transfer position is when the sample placement end of the sample holder is in the ultra-high vacuum transfer chamber for sample transfer and detection.

[0006] In a preferred embodiment, the deposition chamber includes a cylinder body, which is a stainless steel structure with openings at both ends. The top end of the cylinder body is connected to an ultra-high vacuum transfer chamber, and a base is fitted to the bottom end of the cylinder body. A detachable sleeve is provided between the base and the cylinder body, and the sleeve is used to seal the bottom opening of the base with the cylinder body.

[0007] In a preferred embodiment, the ultra-high vacuum transfer chamber has a six-way cavity structure. The upper and lower openings of the ultra-high vacuum transfer chamber are respectively set to correspond to the fixing sleeve and the deposition chamber. The ultra-high vacuum transfer chamber has corresponding openings on its four horizontal sides, and three of the four horizontal openings are respectively equipped with a vacuum gauge, a molecular pump and an observation window. The vacuum gauge is used to detect changes in the atmospheric pressure inside the ultra-high vacuum transfer chamber, the molecular pump is used to perform a vacuum operation inside the ultra-high vacuum transfer chamber, and the observation window is used to observe the posture and position of the sample holder at the sample placement end.

[0008] In a preferred embodiment, the sample holder includes an outer tube that is movably disposed within a fixed sleeve. The outer tube is a hollow metal rod structure. A flange is installed at the end of the outer tube away from the ultra-high vacuum transfer chamber. A linear actuator is fixedly mounted on the fixed sleeve, and the drive end of the linear actuator is fixedly connected to the outer tube.

[0009] In a preferred embodiment, the sample placement end of the outer tube is provided with a flange, a boss is installed on the end face of the flange, and a mounting hole is opened on the end face of the boss for fixing the sample stage. A heating rod is installed inside the outer tube, and a groove is opened at the end of the heating rod located inside the outer tube. A heating plate is installed in the groove, and a screw hole is opened at the other end of the heating rod for connecting with the flange at the end of the outer tube.

[0010] In a preferred embodiment, an inwardly protruding platform is provided inside the top opening of the deposition chamber, and an O-ring is fitted on the top of the protruding platform. The flange and the O-ring cooperate to achieve a seal inside the deposition chamber.

[0011] In a preferred embodiment, a gate valve is installed between the deposition chamber and the ultra-high vacuum transfer chamber, the gate valve being used to isolate the deposition chamber and the ultra-high vacuum transfer chamber.

[0012] In a preferred embodiment, the inlet of the deposition chamber is equipped with an inlet pipe, the other end of which is connected to a valve-controlled gas circuit system. The outlet of the deposition chamber is equipped with an exhaust pipe. The vacuum system includes an exhaust pipe and a suction pump. The input end of the suction pump is connected to the other end of the exhaust pipe, and the output end of the suction pump is connected to the input end of the exhaust pipe.

[0013] In a preferred embodiment, a spacer assembly is detachably installed inside the deposition chamber to prevent the precursor gas from contacting the inner wall of the deposition chamber.

[0014] In a preferred embodiment, the spacer assembly includes a cavity sleeve that fits against the inner wall of the deposition chamber. An annular protrusion made of silicone is installed on the outer periphery of the cavity sleeve. The annular protrusion is clamped and fixed by the base and the cylinder. Two inner tube sleeves are installed on the inner wall of the cavity sleeve, and the two inner tube sleeves are respectively adapted to the air intake pipe and the cylinder.

[0015] The beneficial effects of this invention are as follows:

[0016] 1. The present invention has the advantage of being able to deposit and transfer samples in an ultra-high vacuum environment, and the whole system is relatively small in size.

[0017] 2. The sample holder with a special structure used in this invention, in conjunction with the deposition chamber, can achieve a deposition chamber with a small internal volume, which improves efficiency while fulfilling the function of isolating vacuum. Attached Figure Description

[0018] Figure 1 This is a first-view schematic diagram of the three-dimensional structure of the present invention.

[0019] Figure 2 This is a second-view schematic diagram of the three-dimensional structure of the present invention.

[0020] Figure 3This is a front view schematic diagram of the present invention without the bracket frame.

[0021] Figure 4 This is a cross-sectional structural diagram of the present invention.

[0022] Figure 5 This is a schematic diagram of the external structure of the sample holder of the present invention.

[0023] Figure 6 This is a half-sectional view of the sample holder of the present invention.

[0024] Figure 7 This is the present invention. Figure 6 An enlarged schematic diagram of the structure at point A in the middle.

[0025] Figure 8 This is a schematic diagram of the external appearance of the deposition chamber and the ultra-high vacuum transfer chamber of the present invention.

[0026] Figure 9 This is a half-sectional view of the deposition chamber and the ultra-high vacuum transfer chamber of the present invention.

[0027] Figure 10 This is a cross-sectional view of the front view of the deposition chamber and the ultra-high vacuum transfer chamber of the present invention.

[0028] Figure 11 This is the present invention. Figure 10 Enlarged schematic diagram of the structure at point B.

[0029] In the diagram: 1. Outer frame of the support; 2. Precursor source bottle; 3. Valve-controlled gas path system; 4. Deposition chamber; 41. Inlet valve; 42. Inlet pipe; 43. Exhaust pipe; 44. Base; 45. Jacket; 46. Cylinder; 5. Ultra-high vacuum transfer chamber; 51. Vacuum gauge; 52. Fixing sleeve; 53. Molecular pump; 54. Observation window; 55. Flange sealing plate; 6. Sample holder; 61. Outer tube; 611. Flange; 612. Boss; 613. Mounting hole; 62. Heating rod; 63. Heating plate; 7. Linear actuator; 8. Vacuum system; 81. Evacuation pipe; 82. Suction pump; 9. Spacer assembly; 91. Chamber sleeve; 92. Annular protrusion; 93. Inner tube sleeve. Detailed Implementation

[0030] The subject matter described herein will now be discussed with reference to exemplary embodiments. It should be understood that these embodiments are discussed only to enable those skilled in the art to better understand and implement the subject matter described herein, and changes may be made to the function and arrangement of the elements discussed without departing from the scope of this specification. Various processes or components may be omitted, substituted, or added as needed in the examples. Furthermore, features described in some examples may be combined in other examples.

[0031] like Figures 1-11As shown, an ultra-high vacuum atomic layer deposition system includes a support frame 1, a precursor source bottle 2, a valve-controlled gas path system 3, a deposition chamber 4, an ultra-high vacuum transfer chamber 5, a sample holder 6, and a vacuum system 8. The precursor source bottle 2 is mounted on the support frame 1. The output end of the precursor source bottle 2 is connected to the input end of the valve-controlled gas path system 3. The output end of the valve-controlled gas path system 3 is connected to the gas inlet of the deposition chamber 4. The gas outlet of the deposition chamber 4 is connected to the input end of the vacuum system 8. The deposition chamber 4 and the ultra-high vacuum transfer chamber 5 are arranged vertically, and the deposition chamber 4... The sample holder 6 is connected to the ultra-high vacuum transfer chamber 5. A fixing sleeve 52 is installed on the top of the ultra-high vacuum transfer chamber 5. The sample placement end of the sample holder 6 is located inside the fixing sleeve 52. A linear actuator 7 is installed on one side of the fixing sleeve 52. The linear actuator 7 is used to drive the sample placement end of the sample holder 6 to switch between the deposition position and the sample transfer position. The deposition position is the position where the sample placement end of the sample holder 6 is in the deposition chamber 4 for atomic layer deposition. The sample transfer position is the position where the sample placement end of the sample holder 6 is in the ultra-high vacuum transfer chamber 5 for sample transfer and detection.

[0032] It should be noted that the precursor source bottle 2 and valve-controlled gas path system 3 in this invention are not significantly different from conventional ALD deposition systems. The precursor source bottle 2 is a conventional 3+1 configuration with three deposition sources and one water source, and interfaces are reserved for expansion and upgrade functions. The valve-controlled gas path system 3 uses a three-hole ALD-specific pneumatic diaphragm valve with valve seat purging function, and uses inert gas to purge the valve seat during the deposition process. The purging gas uses a digital mass flow controller for stable flow control. The valve-controlled gas path system additionally includes several gas source inlets, and can selectively add deposition sources such as ammonia and methane, as well as oxidizing gas sources such as ozone. Interfaces are also reserved for additional expansion and upgrade functions. Both the valve-controlled gas path system 3 and the precursor source bottle 2 are covered with heating jackets, which can heat up to 350 degrees Celsius and are equipped with temperature sensors to provide stable temperature control for the deposition gas path and the precursor source bottle 2 to meet the deposition requirements.

[0033] The deposition chamber 4 includes a cylinder 46, which is a stainless steel structure with openings at both ends. The top of the cylinder 46 is connected to the ultra-high vacuum transfer chamber 5. The bottom of the cylinder 46 is fitted with a base 44. A detachable sleeve 45 is provided between the base 44 and the cylinder 46. The sleeve 45 is used to seal the bottom opening of the base 44.

[0034] It should be noted that the deposition chamber 4 uses a small 316L stainless steel chamber. Due to its small size, the vacuum recovery speed is faster, which is suitable for the deposition mode of ALD. The slide valve 41 above the deposition chamber 4 is connected using a CF40 knife-edge flange.

[0035] It should be further explained that the deposition chamber 4 itself is equipped with a pair of gas inlets and outlets, namely the inlet and outlet of the deposition chamber 4, which are used to introduce precursor airflow and to evacuate the deposition chamber 4. The precursor airflow inlet side interface (the inlet of the deposition chamber 4) uses a 1 / 2-inch VCR face seal male connector, and the vacuum airway side (the outlet of the deposition chamber 4) uses a KF16 clamp interface.

[0036] It should be further noted that the lower part of the cavity has a KF35 clamp interface, which facilitates the expansion and addition of other functions such as infrared temperature measurement and RF plasma introduction, and is convenient for maintenance and replacement of the spacer assembly 9. The base 44 is used for sealing during normal use.

[0037] The ultra-high vacuum transfer chamber 5 has a six-way cavity structure. The upper and lower openings of the ultra-high vacuum transfer chamber 5 are respectively set to correspond to the fixed sleeve 52 and the deposition chamber 4. The ultra-high vacuum transfer chamber 5 has corresponding openings on its four horizontal sides, and a vacuum gauge 51, a molecular pump 53, an observation window 54 and a flange sealing plate 55 are respectively installed in the four horizontal openings. The vacuum gauge 51 is used to detect the change of atmospheric pressure in the ultra-high vacuum transfer chamber 5. The molecular pump 53 is used to perform vacuuming operation in the ultra-high vacuum transfer chamber 5. The observation window 54 is used to observe the posture and position of the sample holder 6 where the sample is placed.

[0038] It should be noted that the ultra-high vacuum transfer chamber 5 is a six-way chamber using five CF40 flanges and one CF63 flange port. The two flanges on one axis are closer together (vertical axis) to shorten the length of the sample holder 6.

[0039] It should be further explained that the ultra-high vacuum transfer chamber 5 is equipped with a full-range vacuum gauge 51, connected using a CF40 flange, used to detect vacuum changes within the ultra-high vacuum to atmospheric pressure range inside the ultra-high vacuum transfer chamber 5; the ultra-high vacuum transfer chamber 5 is equipped with a linear actuator 7 (the linear actuator 7 is a telescopic cylinder or hydraulic telescopic rod or other linear drive device) connected using a CF40 flange, used to fix the sample holder 6 and realize the vertical movement of the sample holder 6 to meet the needs of deposition and sample transfer; the CF63 port on the ultra-high vacuum transfer chamber 5 is equipped with a molecular pump 53 with a pumping speed of 80L / s, used to perform vacuuming operations inside the ultra-high vacuum transfer chamber 5 to achieve an ultra-high vacuum environment; one of the openings of the ultra-high vacuum transfer chamber 5 is equipped with an observation window 54, used to observe the posture and position of the sample holder 6 to meet the sample transfer function.

[0040] The sample holder 6 includes an outer tube 61, which is movably disposed within the fixed sleeve 52. The outer tube 61 is a hollow metal rod structure. A flange is installed at the end of the outer tube 61 away from the ultra-high vacuum transfer chamber 5. The linear actuator 7 is fixedly installed on the fixed sleeve 52, and the driving end of the linear actuator 7 is fixedly connected to the outer tube 61.

[0041] The outer tube 61 has a flange 611 at the sample placement end, a boss 612 on the end face of the flange 611, and a mounting hole 613 on the end face of the boss 612 for fixing the sample stage. A heating rod 62 is installed inside the outer tube 61. The end of the heating rod 62 inside the outer tube 61 has a groove, and a heating element 63 is installed in the groove. The other end of the heating rod 62 has a screw hole for connecting to the flange at the end of the outer tube 61.

[0042] It should be noted that the outer tube 61 is made of a hollow metal rod welded to the CF40 flange. The front flange 611 and the boss 612 are mirror polished on both ends. The flange 611 is used to form a seal with the four O-rings in the deposition chamber. The boss 612 has mounting holes 613 machined on its surface to fix the front sample stage. The sample stage is made of oxygen-free copper and the contact area with the boss 612 is mirror polished to achieve good thermal contact. The sample stage has grooves and through holes engraved on its surface for fixing with the boss 612 and for fixing the flag-shaped sample holder. The inner side of the outer tube 61 is hollow to accommodate the heating rod 62. The groove at the top of the heating rod 62 is used to accommodate the ceramic heating plate 63. The heating rod 62 is fixed to the CF40 flange of the outer tube 61 by screws through the screw hole at the tail, thereby forming good contact between the heating element 63 and the inner side of the front flange 611 of the outer tube 61, for transferring the heat of the heating element 63; the heating rod 62 has a through hole inside for the output of the thermocouple and ceramic heating element 63 leads.

[0043] The top opening of the deposition chamber 4 has an inwardly protruding platform inside, and an O-ring is fitted on the top of the protruding platform. The flange 611 cooperates with the O-ring to achieve a seal inside the deposition chamber 4.

[0044] It should be noted that there is an inwardly protruding platform at the flange above the deposition chamber 4, with an embedded fluororubber O-ring, which is the contact and sealing point between the flange 611 of the sample holder 6 and the deposition chamber 4, and performs vacuum sealing on the deposition chamber 4.

[0045] A slide gate valve 41 is installed between the deposition chamber 4 and the ultra-high vacuum transfer chamber 5. The slide gate valve 41 is used to isolate the deposition chamber 4 and the ultra-high vacuum transfer chamber 5.

[0046] An air inlet pipe 42 is installed at the air inlet of the deposition chamber 4. The other end of the air inlet pipe 42 is connected to the valve-controlled gas circuit system 3. An exhaust pipe 43 is installed at the air outlet of the deposition chamber 4. The vacuum system 8 includes an air extraction pipe 81 and a suction pump 82. The input end of the suction pump 82 is connected to the other end of the exhaust pipe 43, and the output end of the suction pump 82 is connected to the input end of the air extraction pipe 81.

[0047] It should be noted that after the entire device is assembled, there are two main working states: state one is the deposition mode and state two is the sample transfer mode.

[0048] It should be further explained that in deposition mode, the linear actuator 7 is compressed to its minimum stroke, and the sample holder 6 is pressed down to the O-ring of the deposition chamber 4, squeezing the O-ring to form a seal on the deposition chamber 4 (this position is the deposition position). The sample substrate is placed on the sample stage made of oxygen-free copper, and thin film deposition is performed in the deposition chamber 4. After the deposition process is completed, the sample holder 6 moves up to the top with the linear actuator 7 and is placed at the center of the six-way valve of the ultra-high vacuum transfer chamber 5 - the sample transfer position (the linear actuator 7 drives the sample holder 6 to switch positions, from the deposition position to the sample transfer position). In sample transfer mode, the six-way valve of the ultra-high vacuum transfer chamber 5 reaches an ultra-high vacuum state under the action of the molecular pump 53. The sample can then be transferred out of the ALD deposition system under ultra-high vacuum state through the sample transfer mechanism or used for offline or online analysis and detection to detect the quality of the prepared thin film sample.

[0049] Compared to widely used conventional ALD deposition systems, this invention offers the advantages of ultra-high vacuum deposition and sample transfer, while maintaining a smaller overall system size. The ultra-high vacuum sample transfer function is achieved by placing an ultra-high vacuum transfer chamber 5 above the deposition chamber 4, using a specially shaped sample holder 6. Many solutions exist for achieving ultra-high vacuum deposition and sample transfer, but most utilize larger deposition chambers 4 and transfer chambers, along with more complex sample transfer mechanisms. This objectively increases the volume of the deposition chamber 4, prolongs the time required for the entire system to recover vacuum after each precursor deposition cycle, and reduces efficiency. The specially structured sample holder used in this system, combined with the deposition chamber 4, allows for a smaller deposition chamber 4, improving efficiency while maintaining vacuum isolation.

[0050] The sedimentation chamber 4 is detachably equipped with a spacer assembly 9, which is used to prevent the precursor gas from contacting the inner wall of the sedimentation chamber 4.

[0051] The spacer assembly 9 includes a cavity sleeve 91, which fits against the inner wall of the deposition chamber 4. An annular protrusion 92 is installed on the outer periphery of the cavity sleeve 91. The annular protrusion 92 is made of silicone material, which facilitates the clamping and fixing of the annular protrusion 92 by the base 44 and the cylinder 46. Two inner tube sleeves 93 are installed on the inner wall of the cavity sleeve 91. The two inner tube sleeves 93 are respectively adapted to the air intake pipe 42 and the cylinder 46.

[0052] In the case of long-term deposition of different materials in this invention, different precursor molecules repeatedly enter the cavity, so that the cavity inside the deposition chamber 4 is in a different precursor molecule atmosphere for a long time. During deposition, different precursor molecules usually adhere to the inner wall of the cylinder 46 of the deposition chamber 4, forming different thin film layers. These thin film layers will affect the sample film during detection, thereby affecting the technical problem of the characterization quality of the sample film analysis and detection results.

[0053] Based on this, the present invention provides spacer assemblies 9 attached to the inner walls of the cylinder 46, intake pipe 42 and exhaust pipe 43, and uses a bolted detachable connection via a jacket 45. Before each deposition, the spacer assembly 9, which is not reactive with the precursor molecules of the current deposition, is installed and attached to the inside of the cylinder 46, isolating the inner wall of the deposition chamber 4 from the precursor molecule atmosphere, thereby preventing different precursor molecules from adhering to the inner wall of the cylinder 46 and solving the problem of the influence of the preceding deposition on the subsequent deposition.

[0054] The embodiments of this example have been described above. However, this example is not limited to the specific implementation methods described above. The specific implementation methods described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms based on the guidance of this example, and all of them are within the protection scope of this example.

Claims

1. An ultra-high vacuum atomic layer deposition system, characterized in that, The system includes a support frame (1), a precursor source bottle (2), a valve-controlled gas path system (3), a deposition chamber (4), an ultra-high vacuum transfer chamber (5), a sample holder (6), and a vacuum system (8). The precursor source bottle (2) is mounted on the support frame (1). The output end of the precursor source bottle (2) is connected to the input end of the valve-controlled gas path system (3). The output end of the valve-controlled gas path system (3) is connected to the inlet of the deposition chamber (4). The outlet of the deposition chamber (4) is connected to the input end of the vacuum system (8). The deposition chamber (4) and the ultra-high vacuum transfer chamber (5) are arranged vertically, and the deposition chamber (4) and the ultra-high vacuum transfer chamber (5) are arranged vertically. The vacuum transfer chambers (5) are interconnected. A fixed sleeve (52) is installed on the top of the ultra-high vacuum transfer chamber (5). The sample placement end of the sample holder (6) is located inside the fixed sleeve (52). A linear actuator (7) is installed on one side of the fixed sleeve (52). The linear actuator (7) is used to drive the sample placement end of the sample holder (6) to switch between the deposition position and the sample transfer position. The deposition position is the position where the sample placement end of the sample holder (6) is in the deposition chamber (4) for atomic layer deposition. The sample transfer position is the position where the sample placement end of the sample holder (6) is in the ultra-high vacuum transfer chamber (5) for sample transfer detection.

2. The ultra-high vacuum atomic layer deposition system according to claim 1, characterized in that, The deposition chamber (4) includes a cylinder (46), which is a stainless steel structure with openings at both ends. The top of the cylinder (46) is connected to the ultra-high vacuum transfer chamber (5). The bottom of the cylinder (46) is fitted with a base (44). A detachable sleeve (45) is provided between the base (44) and the cylinder (46). The sleeve (45) is used to block the bottom opening of the base (44) of the cylinder (46).

3. The ultra-high vacuum atomic layer deposition system according to claim 2, characterized in that, The ultra-high vacuum transfer chamber (5) has a six-way cavity structure. The upper and lower openings of the ultra-high vacuum transfer chamber (5) are respectively set to correspond to the fixing sleeve (52) and the deposition chamber (4). The ultra-high vacuum transfer chamber (5) has corresponding openings on its horizontal four sides. Three of the four horizontal openings are respectively equipped with a vacuum gauge (51), a molecular pump (53) and an observation window (54). The vacuum gauge (51) is used to detect the change of atmospheric environmental pressure inside the ultra-high vacuum transfer chamber (5). The molecular pump (53) is used to perform vacuuming operation inside the ultra-high vacuum transfer chamber (5). The observation window (54) is used to observe the posture and position of the sample holder (6) where the sample is placed.

4. The ultra-high vacuum atomic layer deposition system according to claim 3, characterized in that, The sample holder (6) includes an outer tube (61), which is movably disposed within a fixed sleeve (52). The outer tube (61) is a hollow metal rod structure. A flange is installed at the end of the outer tube (61) away from the ultra-high vacuum transfer cavity (5). The linear actuator (7) is fixedly installed on the fixed sleeve (52), and the driving end of the linear actuator (7) is fixedly connected to the outer tube (61).

5. The ultra-high vacuum atomic layer deposition system according to claim 4, characterized in that, The outer tube (61) has a flange (611) at the sample placement end, a boss (612) is installed on the end face of the flange (611), and a mounting hole (613) is opened on the end face of the boss (612). The mounting hole (613) is used to fix the sample stage. A heating rod (62) is installed inside the outer tube (61). The end of the heating rod (62) located inside the outer tube (61) has a groove. A heating element (63) is installed in the groove. A screw hole is opened at the other end of the heating rod (62). The screw hole is used to connect with the flange at the end of the outer tube (61).

6. The ultra-high vacuum atomic layer deposition system according to claim 5, characterized in that, The top opening of the deposition chamber (4) is provided with an inwardly protruding platform. An O-ring is fitted on the top of the protruding platform. The flange (611) cooperates with the O-ring to achieve a seal inside the deposition chamber (4).

7. The ultra-high vacuum atomic layer deposition system according to claim 6, characterized in that, A gate valve (41) is installed between the deposition chamber (4) and the ultra-high vacuum transfer chamber (5). The gate valve (41) is used to isolate the deposition chamber (4) and the ultra-high vacuum transfer chamber (5).

8. The ultra-high vacuum atomic layer deposition system according to claim 7, characterized in that, The inlet of the deposition chamber (4) is equipped with an inlet pipe (42), the other end of which is connected to the valve-controlled gas circuit system (3). The outlet of the deposition chamber (4) is equipped with an exhaust pipe (43). The vacuum system (8) includes an exhaust pipe (81) and a suction pump (82). The input end of the suction pump (82) is connected to the other end of the exhaust pipe (43), and the output end of the suction pump (82) is connected to the input end of the exhaust pipe (81).

9. The ultra-high vacuum atomic layer deposition system according to claim 8, characterized in that, The deposition chamber (4) is detachably equipped with a spacer assembly (9), which is used to isolate the precursor gas from contact with the inner wall of the deposition chamber (4).

10. The ultra-high vacuum atomic layer deposition system according to claim 9, characterized in that, The spacer assembly (9) includes a cavity sleeve (91) that fits against the inner wall of the deposition chamber (4). An annular protrusion (92) is installed on the outer periphery of the cavity sleeve (91). The annular protrusion (92) is made of silicone. The annular protrusion (92) is clamped and fixed by the base (44) and the cylinder (46). Two inner tube sleeves (93) are installed on the inner wall of the cavity sleeve (91). The two inner tube sleeves (93) are respectively adapted to the air intake pipe (42) and the cylinder (46).

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