Gas inlet device and semiconductor processing apparatus

Abstract

The application discloses an air inlet device and a semiconductor processing equipment. The air inlet device comprises: an adapter structure, a first uniform air structure and a second uniform air structure arranged along a first direction and arranged on opposite sides of the adapter structure respectively; a transmission channel extending along a second direction and used for communicating with the semiconductor processing equipment is arranged in the adapter structure; the first uniform air structure is provided with a plurality of first air inlets arranged along a third direction and communicating with the transmission channel; the first air inlet comprises a first air inlet and a first air outlet, and the first air inlet is inclined to the direction close to the process chamber from the first air inlet to the first air outlet; the second uniform air structure is provided with a plurality of second air inlets arranged along the third direction and communicating with the transmission channel; the second air inlet comprises a second air inlet and a second air outlet, and the second air inlet is inclined to the direction close to the process chamber from the second air inlet to the second air outlet. The application can improve the uniformity of the gas entering the process chamber.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment technology, specifically to an air intake device and semiconductor processing equipment. Background Technology

[0002] In the silicon epitaxy process, the horizontal silicon epitaxy reactor has the reaction gases (silicon source and hydrogen, etc.) parallel to the substrate surface and flowing from one side of the substrate to the other. It is required that the rate and flow rate of reactants and dopants transported to all parts of the substrate are equal during the epitaxial growth process, and the gas flow field is kept uniform and parallel laminar flow to avoid any fluctuations, turbulence and convection vortices in order to meet the requirements of the thickness, resistivity and doping concentration uniformity of the epitaxial growth film.

[0003] Rapid Thermal Processing (RTP) equipment is widely used in the DRAM / 3D-NAND / Logic fields. The equipment primarily functions in three ways: in-situ oxidation, moisture-gas in-situ oxidation, and rapid thermal processing. The principles of in-situ oxidation and moisture-gas in-situ oxidation involve introducing process gases (O2, H2) to form a dense oxide film on the Si substrate surface. For larger wafers (e.g., 12-inch wafers), the uniformity of the gas flow field above the wafer is crucial, directly impacting the film quality and performance.

[0004] An existing air intake structure for the process chamber of an RTP device or silicon epitaxy device is as follows: Figure 1 As shown, Figure 2 yes Figure 1 The cross-sectional diagram shows that the process gas enters through the inlet 10a, flows through the gas equalization hole 20a, and is directly blown onto the inclined baffle 30a where it is deflected before finally entering the interior of the process chamber. In the current design, there is a significant difference in gas flow velocity directly above the wafer, which affects the final product quality. Summary of the Invention

[0005] To address the aforementioned technical problems, this application provides an air intake device and a semiconductor processing apparatus, which can improve the problem in the prior art where there is a significant difference in the flow rate of gas above the wafer after it enters the process chamber from the air intake structure, thus affecting the quality of the final product.

[0006] To solve the above-mentioned technical problems, in a first aspect, embodiments of this application provide an air intake device for introducing gas into the process chamber of a semiconductor processing equipment. The air intake device includes: a transition structure, and a first gas equalization structure and a second gas equalization structure arranged along a first direction and respectively disposed on opposite sides of the transition structure.

[0007] The adapter structure is provided with a transmission channel extending in the second direction for communicating with the semiconductor processing device.

[0008] The first gas distribution structure is provided with a plurality of first air inlets arranged along a third direction and communicating with the transmission channel; the first air inlet includes a first air inlet away from the transmission channel and a first air outlet close to the transmission channel, and the first air inlet is inclined from the first air inlet to the first air outlet toward the process chamber.

[0009] The second gas distribution structure is provided with a plurality of second air inlets arranged along the third direction and communicating with the transmission channel; the second air inlet includes a second air inlet away from the transmission channel and a second air outlet close to the transmission channel, and the second air inlet is inclined from the second air inlet to the second air outlet toward the process chamber;

[0010] Wherein, the first direction, the second direction, and the third direction are perpendicular to each other.

[0011] Optionally, the first gas equalization structure includes: a first outer cavity and a first inner cavity disposed within the first outer cavity, wherein the first inner cavity has a first flow equalization cavity extending along the third direction, and a first annular cavity extending along the third direction is formed between the first outer cavity and the first inner cavity.

[0012] The first inner cavity is provided with a plurality of first air outlets, which are used to connect the first uniform flow cavity and the first annular cavity.

[0013] The first outer cavity is provided with at least one first air supply hole, which also penetrates the first inner cavity and is used to introduce gas into the first uniform flow cavity.

[0014] The plurality of first air inlets are disposed on the first outer cavity.

[0015] Optionally, the first air outlet is located on the side of the first inner cavity away from the first air inlet.

[0016] Optionally, the first air outlet is located at one end of the first inner cavity, and the distance between any two adjacent first air outlets gradually decreases from the direction closer to the first air outlet to the direction farther away from the first air outlet.

[0017] Optionally, the angle between the extension direction of the first air inlet and the second direction is 30-60°.

[0018] Optionally, the diameter of the first air inlet gradually increases from the first air inlet to the first air outlet.

[0019] Optionally, the second gas equalization structure includes: a second outer cavity and a second inner cavity disposed within the second outer cavity, wherein the second inner cavity has a second flow equalization cavity extending along the third direction, and a second annular cavity extending along the third direction is formed between the second outer cavity and the second inner cavity;

[0020] The second inner cavity is provided with a plurality of second air outlets, which are used to connect the second uniform flow cavity and the second annular cavity;

[0021] The second outer cavity is provided with at least one second air inlet, which also penetrates the second inner cavity for introducing gas into the second uniform flow cavity;

[0022] The plurality of second air inlets are disposed on the second outer cavity.

[0023] Optionally, all the second air outlets correspond one-to-one with all the first air outlets, and the corresponding second air outlets are centrally symmetrical with respect to the first air outlets, with the symmetrical point being the midpoint of the line connecting any corresponding second air outlet and the first air outlet.

[0024] Optionally, all the second air inlets correspond one-to-one with all the first air inlets, and the corresponding second air inlets and the first air inlets are symmetrical to each other, with the plane of symmetry being the perpendicular bisector of the line connecting any corresponding second air inlet and the first air inlet.

[0025] Optionally, when the first outer cavity is provided with a first air supply hole and the first air supply hole is located on the side of the first gas distribution structure facing the transition structure, the second outer cavity is provided with a first through hole at the position opposite to the first air supply hole, and the second air supply hole is provided at the end of the second outer cavity away from the first through hole.

[0026] The adapter structure also includes a second through hole, which connects the first air supply hole and the first through hole.

[0027] Optionally, the transition structure includes a top plate, a first side plate, a bottom plate, and a second side plate connected end to end to form the transmission channel. The top plate and the bottom plate are arranged along the first direction, and the first side plate and the second side plate are arranged along the third direction.

[0028] The top plate is provided with a first fixing groove that communicates with the transmission channel. The bottom surface of the first air equalization structure includes a first protrusion structure that cooperates with the first fixing groove. The first air inlet extends from the bottom of the first flow equalization cavity to the bottom of the first protrusion structure.

[0029] The base plate is provided with a second fixing groove that communicates with the transmission channel. The bottom surface of the second air equalization structure includes a second protrusion that cooperates with the second fixing groove. The second air equalization structure is connected to the second fixing groove from below. The second air inlet extends from the bottom of the second flow equalization cavity to the bottom of the second protrusion.

[0030] Optionally, the second through hole penetrates the bottom plate, the first side plate, and the top plate; or,

[0031] The second through hole penetrates the bottom plate, the second side plate, and the top plate.

[0032] Optionally, the top surface of the base plate is parallel to the bottom surface of the first protruding structure.

[0033] Optionally, the adapter structure further includes: a first mounting plate and a second mounting plate that sandwich the top plate, the first side plate, the bottom plate and the second side plate from both ends of the transmission channel, wherein the transmission channel also passes through the first mounting plate and the second mounting plate.

[0034] The first mounting plate is used to connect the process chamber, and the second mounting plate is used to connect the transmission device.

[0035] Secondly, embodiments of this application provide a semiconductor processing apparatus, including a process chamber and an air intake device as described in the above embodiments connected to the process chamber.

[0036] As described in this application, after the gas enters the first and second gas equalization structures, it enters the transmission channel through the first and second air inlets, respectively, and then flows into the process chamber. Since both the first and second air inlets are inclined towards one side of the process chamber, the gas is ejected from the first and second air inlets at a certain angle to each other, which can cancel out part of the inclined airflow, reduce the refracted airflow, and at least form a part of the airflow advancing along the second direction Y. This can reduce the occurrence of eddies and improve the uniformity of the gas entering the process chamber. Attached Figure Description

[0037] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, those skilled in the art can obtain other drawings based on these drawings without any creative effort.

[0038] Figure 1 This is a schematic diagram of the air intake structure of an existing process chamber;

[0039] Figure 2 yes Figure 1 A cross-sectional view;

[0040] Figure 3 yes Figure 1 A schematic diagram simulating the airflow inside the process chamber;

[0041] Figure 4 yes Figure 1 A schematic diagram of the airflow velocity distribution inside the process chamber;

[0042] Figure 5 This is a schematic diagram of the application of an air intake device in a process chamber according to an embodiment of this application;

[0043] Figure 6 yes Figure 5 A top-view structural diagram;

[0044] Figure 7 yes Figure 5 A side view of the structure (internal structure is in perspective).

[0045] Figure 8 It is along Figure 6 Schematic diagram of the cross-sectional structure along line AA;

[0046] Figure 9 yes Figure 8 A magnified structural diagram of section D in the middle;

[0047] Figure 10 It is along Figure 7 Schematic diagram of the cross-sectional structure of the middle BB line;

[0048] Figure 11 This is a schematic diagram of a first gas-uniform structure provided in an embodiment of this application;

[0049] Figure 12 yes Figure 11 Schematic diagram of the E-direction structure;

[0050] Figure 13 It is along Figure 12 Schematic diagram of the cross-sectional structure of the middle FF line;

[0051] Figure 14 This is a schematic diagram of the airflow direction of a first uniform gas structure provided in an embodiment of this application;

[0052] Figure 15 This is a schematic diagram of a first gas-uniform structure provided in an embodiment of this application;

[0053] Figure 16 It is along Figure 7 Schematic diagram of the cross-sectional structure of the middle CC line;

[0054] Figure 17 This is a schematic diagram of a second gas-uniform structure provided in an embodiment of this application;

[0055] Figure 18 yes Figure 17 A schematic diagram of the G-direction structure;

[0056] Figure 19 It is along Figure 18 Schematic diagram of the cross-sectional structure of the middle HH line;

[0057] Figure 20 This is a schematic diagram of a transition structure provided in an embodiment of this application.

[0058] The objectives, functional features, and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. The accompanying drawings have illustrated specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to specific embodiments. Detailed Implementation

[0059] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0060] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, components, features, and elements with the same names in different embodiments of this application may have the same meaning or different meanings, the specific meaning of which must be determined by its interpretation in that specific embodiment or further in conjunction with the context of that specific embodiment.

[0061] It should be further understood that the terms "comprising" or "including" indicate the presence of the stated features, steps, operations, elements, components, items, types, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, types, and / or groups. The terms "or," "and / or," and "comprising at least one of the following," as used in this application, can be interpreted as inclusive, or mean any one or any combination thereof. For example, "comprising at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C," and similarly, "A, B, or C" or "A, B, and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C." Exceptions to this definition only occur when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0062] It should be understood that although the terms first, second, third, etc., may be used in this document to describe various types of information, this information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of this document, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the singular forms “a,” “an,” and “the” used in this document are intended to also include the plural forms, unless the context indicates otherwise.

[0063] It should be understood that the terms "top", "bottom", "upper", "lower", "vertical", "horizontal", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application.

[0064] For ease of description, the following embodiments are all illustrated using an orthogonal space formed by a horizontal plane and a vertical direction as an example. This premise should not be construed as a limitation of this application.

[0065] As mentioned above, in the existing design, the gas inlet structure exhibits a significant difference in flow velocity directly above the wafer after entering the process chamber, affecting the final product quality. The applicant, through research and analysis, believes the main reasons for this problem are: (1) The outlet velocity of the existing inlet structure is relatively high, and the airflow entering the process chamber undergoes several refractions, easily generating eddies that affect the uniformity of airflow inside the chamber. Please refer to [link to relevant documentation]. Figure 3 , Figure 3 yes Figure 1A schematic diagram of the airflow simulation inside the process chamber. Since the pressure inside the process chamber needs to be maintained at the target pressure during the process, the intake velocity cannot be reduced by decreasing the supply pressure; (2) The flow velocity is fast in the center of the area directly above the wafer and slow on both sides, resulting in poor uniformity of the airflow field on the wafer surface. Please refer to [reference needed]. Figure 4 , Figure 4 yes Figure 1 This is a schematic diagram showing the airflow velocity distribution inside the process chamber. Therefore, reducing the influence of either of the above two factors can improve airflow uniformity. Based on this, this application provides an air intake device and a semiconductor processing apparatus.

[0066] Please also refer to Figures 5-9 , Figure 17 and Figure 18 , Figure 5 This is a schematic diagram illustrating the application of an air intake device in a process chamber, according to an embodiment of this application. Figure 6 yes Figure 5 A top-view structural diagram. Figure 7 yes Figure 5 A side view of the structure (internal structure is in perspective). Figure 8 It is along Figure 6 Schematic diagram of the cross-sectional structure along line AA. Figure 9 yes Figure 8 A magnified structural diagram of section D. Figure 17 This is a schematic diagram of a second gas-uniform structure provided in an embodiment of this application. Figure 18 yes Figure 17 The diagram shows the structure along the G direction. The air intake device may include a transition structure 200, a first air distribution structure 10, and a second air distribution structure 20. The first air distribution structure 10 and the second air distribution structure 20 are arranged along the first direction Z and are respectively disposed on opposite sides of the transition structure 200.

[0067] The transition structure 200 includes a transmission channel 201 that communicates with the process chamber 300 and extends along the second direction Y.

[0068] The first gas distribution structure 10 is provided with a plurality of first air inlets 112 arranged along the third direction X. The first air inlets 112 are connected to the transmission channel 201. The first air inlets 112 include a first air inlet 1121 away from the transmission channel 201 and a first air outlet 1122 close to the transmission channel 201. The first air inlets 112 are inclined from the first air inlet 1121 to the first air outlet 1122 towards the process chamber 300. The first direction Z, the second direction Y and the third direction X are mutually perpendicular.

[0069] The second gas distribution structure 20 is provided with a plurality of second air inlets 212 arranged along the third direction X. The second air inlets 212 are connected to the transmission channel 201. The second air inlets 212 include a second air inlet 2121 away from the transmission channel 201 and a second air outlet 2122 close to the transmission channel 201. The second air inlets 212 are inclined from the second air inlet 2121 to the second air outlet 2122 towards the direction close to the process chamber 300.

[0070] It should be noted that the internal structure of the first gas equalization structure 10 and the second gas equalization structure 20, as well as the connection method with the external gas source, can adopt conventional structures in the field, and the embodiments of this application do not impose any special limitations.

[0071] The working principle of the air intake device in this embodiment is as follows: After the gas enters the first gas equalization structure 10 and the second gas equalization structure 20, it enters the transmission channel 201 through the first air inlet 112 and the second air inlet 212, respectively, and then flows into the process chamber 300. Since both the first air inlet 112 and the second air inlet 212 are inclined to one side of the process chamber 300, please refer to [link to relevant documentation]. Figure 14 , Figure 14 This is a schematic diagram of the airflow direction of a first gas-uniform structure provided in an embodiment of this application. The airflow direction of the second gas-uniform structure 20 is not shown again. Gas is ejected from the first air inlet 112 and the second air inlet 212 at a certain angle to each other, which can cancel out part of the angled airflow, reduce the refracted airflow, and at least form a part of the airflow that moves along the second direction Y (horizontal direction in the figure), thereby reducing the occurrence of eddies and improving the uniformity of the gas entering the process chamber 300.

[0072] It should be noted that, for ease of description, all embodiments in this application are referred to as... Figure 5 The plane defined by the mutually orthogonal third direction X and the second direction Y is the horizontal plane, and the top surface, bottom surface, etc. of each structure are determined by it. The definition of this orientation does not constitute a limitation of this application.

[0073] In one embodiment, this application provides an example of the internal structure of the first gas-uniform structure 10, please also refer to... Figures 7-13 ,in, Figure 10 It is along Figure 7 Schematic diagram of the cross-sectional structure of the middle BB line. Figure 11 This is a schematic diagram of a first gas-uniform structure provided in an embodiment of this application. Figure 12 yes Figure 11 Schematic diagram of the E-direction structure. Figure 13 It is along Figure 12 Schematic diagram of the cross-sectional structure of the FF line.

[0074] The first gas-uniform structure 10 may include: a first outer cavity 11, and a first inner cavity 12 connected to the first outer cavity 11. The first inner cavity 12 has a first flow-uniforming cavity 121 extending in a third direction X, and a first annular cavity 111 extending in a third direction X is formed between the first outer cavity 11 and the first inner cavity 12. The first inner cavity 12 is provided with a plurality of first air outlets 122, which are used to connect the first flow-uniforming cavity 121 and the first annular cavity 111.

[0075] The first outer cavity 11 is provided with a plurality of first air inlets 112 and at least one first air outlet 113. The first air inlets 112 are used to connect the first annular cavity 111 with the transmission channel 201, and the first air outlet 113 simultaneously penetrates the first inner cavity 12 for introducing gas into the first uniform flow cavity 121. It should be noted that... Figure 6 In this configuration, the first air inlet 113 is located on the top surface of the first outer cavity 11, or it can be located on the bottom or side surface of the first outer cavity 11, and it can ultimately be connected to the first uniform flow cavity 121.

[0076] The working principle of the first gas equalization structure 10 in this embodiment is as follows: Gas supplied by an external gas source can enter the first equalization cavity 121 through the first gas delivery hole 113. After being homogenized and buffered, it flows into the first annular cavity 111 through the first gas outlet 122 on the first inner cavity 12. After being homogenized and buffered a second time, it flows into the transmission channel 201 through the first gas inlet 112 on the first outer cavity 11 to deliver gas to the process chamber 300. The gas equalization and buffering effects of the first equalization cavity 121 and the first annular cavity 111 can greatly reduce the velocity of the gas flowing out of the first gas inlet 112 and improve the uniformity of the gas output. This can prevent the flow velocity at the outlet of the first gas inlet 112 from being too high and generating eddies, thereby improving the uniformity of the gas entering the process chamber 300.

[0077] Preferably, the first air outlet 122 is located on the side of the first inner cavity 12 away from the first air inlet 112. This can increase the gas distribution path in the first annular cavity 111, thereby improving gas uniformity.

[0078] The specific structural forms of the first uniform flow cavity 121 and the first annular cavity 111 that realize the first uniform gas structure 10 are not particularly limited in the embodiments of this application. As an example, please refer to Figure 15 , Figure 15This is a schematic diagram of a first gas equalization structure provided in an embodiment of this application. The external shape of the first outer cavity 11 is not limited. The first outer cavity 11 may include a first part 101 and a second part 102 that are assembled and cooperate with each other. For example, the two parts can be welded to form a whole. After assembly, the interior of the first outer cavity 11 can form a cavity, such as a cylindrical cavity. A pipe, i.e., a first inner cavity 12, is coaxially arranged in the cylindrical cavity. The first inner cavity 12 may not be tubular, such as rectangular. The pipe forms a first flow equalization cavity 121, and the through hole on the pipe wall forms a first air outlet 122. The part of the cylindrical cavity located outside the pipe forms a first annular cavity 111. The first air outlet 122 connects the first flow equalization cavity 121 and the first annular cavity 111. A first air inlet 112 is provided on the first outer cavity 11, which can be set in... Figure 15 The bottom surface of the first part 101 in the state shown (can also be viewed) Figure 11 The first air inlet 112 is located opposite to the air outlet 122 to increase the gas distribution path. It is used to deliver gas to the process chamber 300 via the transmission channel 201. At least one first air outlet 113 is provided on the first outer cavity 11 (see also...). Figure 11 The first air inlet 113 simultaneously penetrates the first inner cavity 12 and is used to introduce gas into the first uniform flow cavity 121.

[0079] Please continue reading. Figure 15 In one embodiment, the first air inlet 113 is located at one end of the first inner cavity 12, and the distance between all adjacent first air outlets 122 gradually decreases from the direction closer to the first air inlet 113 to the direction farther away from the first air inlet 113, that is, all the first air outlets 122 are arranged from dense to sparse along the X direction shown in the figure. Since the airflow is relatively larger closer to the first air inlet 113, the first air outlets 122 can improve the uniformity of gas entering the first annular cavity 111 through the above arrangement.

[0080] In one embodiment, the angle between the extending direction of the first air inlet 112 and the transfer direction (second direction Y) of the transfer channel 201 is 30-60°. For example, the angle can be 30°, 45°, or 60°. Different angles can be designed according to different chamber structures.

[0081] Furthermore, the first air inlet 112 can be a straight hole, that is, the diameter remains unchanged, such as... Figure 9As shown. Preferably, the diameter of the first air inlet 112 gradually increases from the first air inlet 1121 to the first air outlet 1122. As some examples, the inner wall of the first air inlet 112 can be a smooth curve, such as a trumpet shape, or the inner wall of the first air inlet 112 can be a gradually opening straight line. Factors affecting the gas flow rate include air pressure and the cross-sectional area of ​​the first air inlet 112. In this embodiment, as the gas flows from the first air inlet 1121 to the first air outlet 1122 of the first air inlet 112, the diameter continuously increases, thereby reducing the flow rate.

[0082] In one embodiment, this application provides an example of the internal structure of the second gas-regulating structure 20; please refer to [link / reference]. Figures 6-8 as well as Figures 16-19 , Figure 16 It is along Figure 7 A cross-sectional view of the CC line, in which... Figure 17 This is a schematic diagram of a second gas-uniform structure 20 provided in an embodiment of this application. Figure 18 yes Figure 17 A schematic diagram of the G-direction structure. Figure 19 It is along Figure 18 A cross-sectional view of the middle HH line. The second gas equalization structure 20 includes: a second outer cavity 21, and a second inner cavity 22 connected to the second outer cavity 21. The second inner cavity 22 has a second flow equalization cavity 221 extending in the third direction X. A second annular cavity 211 extending in the third direction X is formed between the second outer cavity 21 and the second inner cavity 22. The second inner cavity 22 is provided with a plurality of second air outlets 222, which are used to connect the second flow equalization cavity 221 and the second annular cavity 211.

[0083] The second outer cavity 21 is provided with a plurality of second air inlets 212 and at least one second air outlet 213. The second air inlets 212 are used to connect the second annular cavity 211 with the transmission channel 201, and the second air outlet 213 simultaneously penetrates the second inner cavity 22 and is used to introduce gas into the second uniform flow cavity 221. Figure 6 and Figure 18 In the middle, the second air outlet 213 is in the transparent state. Please refer to... Figure 19 It should be noted that the second air inlet 213 can also be located on the bottom or side of the second outer cavity 21, as long as it can ultimately communicate with the second uniform flow cavity 221. The structure of the second air inlet 212 can be referred to Figure 9 The setting of the first air intake 112.

[0084] For preferred options, please refer to [link / reference]. Figure 8 , Figure 12 and Figure 18All second air inlets 212 correspond one-to-one with all first air inlets 112, and the corresponding second air inlets 212 and first air inlets 112 are symmetrical to each other, with the plane of symmetry being the perpendicular bisector of the line connecting any corresponding second air inlet 212 and first air inlet 112. Figure 8 In this embodiment, after the first gas-uniform structure 10 is rotated 180° around the plane of symmetry, all the second air inlets 212 correspond to and coincide with all the first air inlets 112. In this embodiment, the gas injection directions of both the first gas-uniform structure 10 and the second gas-uniform structure 20 form a certain angle with the Wafer plane and face towards the chamber side. The airflow is ejected from the first gas-uniform structure 10 and the second gas-uniform structure 20 respectively, and the laminar flow surface formed after convergence is parallel to the Wafer surface, thereby further enhancing the uniformity of gas velocity and distribution, ensuring the consistency of process results, and improving process performance.

[0085] As an example, please continue reading Figure 8 , Figure 12 and Figure 18 All second vents 222 correspond one-to-one with all first vents 122, and the corresponding second vents 222 and first vents 122 are centrally symmetrical, with the symmetry point being the midpoint of the line connecting any corresponding second vent 222 and first vent 122. That is... Figure 8 In the process, after the first uniform air structure 10 rotates 180° around the symmetry point, all the second air outlets 222 correspond to and coincide with all the first air outlets 122.

[0086] As an example of a gas supply solution, please continue reading. Figure 10 , Figure 11 and Figure 16-19 When the first air inlet 113 is located on the side (i.e., the bottom) of the first air distribution structure 10 facing the transition structure 200, the second outer cavity 21 has a first through hole 214 positioned opposite the first air inlet 113, and the second air inlet 213 is located at the end of the second outer cavity 21 away from the first through hole 214. The transition structure 200 also includes a second through hole 41. Figure 10 Because the cutting surface is beveled to cut through the first air inlet 112, the second through hole 41 was not completely cut open. The second through hole 41 connects the first air outlet 113 and the first through hole 214. That is, when supplying gas to the first gas equalization structure 10, the gas can pass sequentially from below through the first through hole 214 of the second gas equalization structure 20 and the second through hole 41 of the transition structure 200, and then enter the first air outlet 113 of the first gas equalization structure 10, finally entering the first gas equalization structure 10. The gas supply to the second gas equalization structure 20 can be directly input through the second air outlet 213. Please refer to [link to relevant documentation]. Figure 19 .

[0087] For an example of a transition structure, please refer to Figures 5-9 and Figure 20 The transition structure 200 may include a top plate 30, a first side plate 40, a bottom plate 50, and a second side plate 60 connected end to end to form a transmission channel 201. The top plate 30 and the bottom plate 50 are arranged along a first direction Z, and the first side plate 40 and the second side plate 60 are arranged along a third direction X. The top plate 30 is provided with a first fixing groove 31 that communicates with the transmission channel 201. The bottom surface of the first air distribution structure 10 includes a first protrusion structure 13 that mates with the first fixing groove 31. The first air inlet 112 of the first air distribution structure 10 extends from the bottom of the first flow distribution cavity 121 to the bottom of the first protrusion structure 13 (see [reference]). Figure 11 The base plate 50 is provided with a second fixing groove that communicates with the transmission channel 201. The bottom surface of the second air equalization structure 20 (referring to the top / bottom surface definition of the first air equalization structure 10) includes a second protrusion structure 23 that cooperates with the second fixing groove 51. The second air equalization structure 20 is connected to the second fixing groove 51 from below. The second air inlet 212 extends from the bottom of the second flow equalization cavity 221 to the bottom of the second protrusion structure 23.

[0088] In this embodiment, the second through hole 41 of the aforementioned embodiment can pass through the bottom plate 50, the first side plate 40 and the top plate 30 sequentially from bottom to top; when the second through hole 41 is provided on the other side, the second through hole 41 can pass through the bottom plate 50, the second side plate 60 and the top plate 30 sequentially from bottom to top.

[0089] Preferably, the top surface of the base plate 50 (i.e., the bottom surface of the transmission channel 201) is parallel to the bottom surface of the first protruding structure 13. That is, the surface of the transmission channel 201 opposite to the first air-regulating structure 10 is a plane, compared to... Figure 1 The existing technology in this paper omits the setting of the inclined stop 30a.

[0090] In one embodiment, please refer to 8 and Figure 20 The adapter structure 200 may further include a first mounting plate 70 and a second mounting plate 80 that sandwich a top plate 30, a first side plate 40, a bottom plate 50, and a second side plate 60 between the two ends of the transmission channel 201. The transmission channel 201 also passes through the first mounting plate 70 and the second mounting plate 80. The first mounting plate 70 is used to connect to the process chamber 300, and the second mounting plate 80 is used to connect to the transmission device. The transmission device can transmit wafers to the process chamber 300 through the transmission channel 201.

[0091] It should be noted that the adapter structure 200 in the above embodiments can be an integrated structure or it can be assembled from two or more components.

[0092] This application also provides a semiconductor processing apparatus, which may include a process chamber 300 and an air intake device as described in the above embodiments. An external conduit 400 can provide uniform gas to the process chamber 300 through the air intake device. This semiconductor processing apparatus may be a single-chamber semiconductor processing apparatus, such as an RTCVD (Rapid Thermal CVD) apparatus or a silicon epitaxy (Epitaxy) apparatus.

[0093] For other working principles and processes of the semiconductor processing device in this embodiment, please refer to the description of the air intake device in the foregoing embodiments of this application, which will not be repeated here.

[0094] The above provides a detailed description of the air intake device and semiconductor processing apparatus provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. It should be noted that the descriptions of each embodiment in this application have different focuses; parts not described in detail in a particular embodiment can be referred to in the relevant descriptions of other embodiments.

[0095] The above are merely preferred embodiments of this application and do not limit the patent scope of this application. The technical features of the technical solution of this application can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are also included within the patent protection scope of this application, as long as the combination of these technical features does not contradict each other.

Claims

1. A gas inlet device for introducing gas into the process chamber of a semiconductor processing apparatus, characterized in that, The air intake device includes: a transition structure, and a first air equalization structure and a second air equalization structure arranged along a first direction and respectively disposed on opposite sides of the transition structure; The adapter structure is provided with a transmission channel extending in the second direction for communicating with the semiconductor processing device. The first gas distribution structure is provided with a plurality of first air inlets arranged along a third direction and communicating with the transmission channel; the first air inlet includes a first air inlet away from the transmission channel and a first air outlet close to the transmission channel, and the first air inlet is inclined from the first air inlet to the first air outlet toward the process chamber. The second gas distribution structure is provided with a plurality of second air inlets arranged along the third direction and communicating with the transmission channel; the second air inlet includes a second air inlet away from the transmission channel and a second air outlet close to the transmission channel, and the second air inlet is inclined from the second air inlet to the second air outlet toward the process chamber; Wherein, the first direction, the second direction, and the third direction are perpendicular to each other.

2. The air intake device according to claim 1, characterized in that, The first gas equalization structure includes: a first outer cavity and a first inner cavity disposed within the first outer cavity. The first inner cavity has a first flow equalization cavity extending along the third direction, and a first annular cavity extending along the third direction is formed between the first outer cavity and the first inner cavity. The first inner cavity is provided with a plurality of first air outlets, which are used to connect the first uniform flow cavity and the first annular cavity. The first outer cavity is provided with at least one first air supply hole, which also penetrates the first inner cavity and is used to introduce gas into the first uniform flow cavity. The plurality of first air inlets are disposed on the first outer cavity.

3. The air intake device according to claim 2, characterized in that, The first air outlet is located on the side of the first inner cavity away from the first air inlet.

4. The air intake device according to claim 2, characterized in that, The first air outlet is located at one end of the first inner cavity, and the distance between any two adjacent first air outlets gradually decreases from the direction closer to the first air outlet to the direction farther away from the first air outlet.

5. The air intake device according to claim 1, characterized in that, The angle between the extension direction of the first air inlet and the second direction is 30-60°.

6. The air intake device according to claim 1, characterized in that, The diameter of the first air inlet gradually increases from the first air inlet to the first air outlet.

7. The air intake device according to any one of claims 1-6, characterized in that, The second gas equalization structure includes: a second outer cavity and a second inner cavity disposed within the second outer cavity, wherein the second inner cavity has a second flow equalization cavity extending along the third direction, and a second annular cavity extending along the third direction is formed between the second outer cavity and the second inner cavity; The second inner cavity is provided with a plurality of second air outlets, which are used to connect the second uniform flow cavity and the second annular cavity; The second outer cavity is provided with at least one second air inlet, which also penetrates the second inner cavity for introducing gas into the second uniform flow cavity; The plurality of second air inlets are disposed on the second outer cavity.

8. The air intake device according to claim 7, characterized in that, All the second air vents correspond one-to-one with all the first air vents, and the corresponding second air vents are centrally symmetrical with respect to the first air vents, with the symmetrical point being the midpoint of the line connecting any corresponding second air vent and the first air vent.

9. The air intake device according to claim 7, characterized in that, All the second air intakes correspond one-to-one with all the first air intakes, and the corresponding second air intakes are symmetrical to the first air intakes. The plane of symmetry is the perpendicular bisector of the line connecting any corresponding second air intake and the first air intake.

10. The air intake device according to claim 7, characterized in that, When the first outer cavity is provided with a first air supply hole, and the first air supply hole is located on the side of the first gas equalization structure facing the transition structure, the second outer cavity is provided with a first through hole at the position opposite to the first air supply hole, and the second air supply hole is provided at the end of the second outer cavity away from the first through hole. The adapter structure also includes a second through hole, which connects the first air supply hole and the first through hole.

11. The air intake device according to claim 10, characterized in that, The transition structure includes a top plate, a first side plate, a bottom plate, and a second side plate connected end to end to form the transmission channel. The top plate and the bottom plate are arranged along the first direction, and the first side plate and the second side plate are arranged along the third direction. The top plate is provided with a first fixing groove that communicates with the transmission channel. The bottom surface of the first air equalization structure includes a first protrusion structure that cooperates with the first fixing groove. The first air inlet extends from the bottom of the first flow equalization cavity to the bottom of the first protrusion structure. The base plate is provided with a second fixing groove that communicates with the transmission channel. The bottom surface of the second air equalization structure includes a second protrusion that cooperates with the second fixing groove. The second air equalization structure is connected to the second fixing groove from below. The second air inlet extends from the bottom of the second flow equalization cavity to the bottom of the second protrusion.

12. The air intake device according to claim 11, characterized in that, The second through hole penetrates the bottom plate, the first side plate, and the top plate; or, The second through hole penetrates the bottom plate, the second side plate, and the top plate.

13. The air intake device according to claim 11, characterized in that, The top surface of the base plate is parallel to the bottom surface of the first protruding structure.

14. The air intake device according to claim 11, characterized in that, The adapter structure further includes: a first mounting plate and a second mounting plate that sandwich the top plate, the first side plate, the bottom plate and the second side plate from both ends of the transmission channel, and the transmission channel also passes through the first mounting plate and the second mounting plate. The first mounting plate is used to connect the process chamber, and the second mounting plate is used to connect the transmission device.

15. A semiconductor processing apparatus, characterized in that, It includes a process chamber and an air intake device as described in any one of claims 1-14 connected to the process chamber.

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