A method and system for testing the complex conductivity of epitaxial thin film materials in the terahertz frequency range

CN117451787BActive Publication Date: 2026-08-28SHANDONG ACAD OF SCI INST OF AUTOMATION
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Patent Information

Application Number
CN202311196014.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-09-15
Publication Date
2026-08-28
Estimated Expiration
2043-09-15

AI Technical Summary

Technical Problem

发明人发现,现有方法没有考虑衬底材料的内部多次反射,导致外延薄膜材料测试准确度不高,无法为集成电路设计建模和性能分析提供准确参数

Benefits of technology

[0022]本公开中,基于太赫兹频段对外延薄膜材料复电导率进行测量,在外延薄膜材料复电导率测试过程中,考虑了衬底材料内部多次反射引入的测试误差,提高了外延薄膜材料复电导率的测试准确度。

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Abstract

The present disclosure relates to the technical field of thin film material performance detection, and provides a method and system for testing complex permittivity of epitaxial thin film material in a terahertz frequency band, which comprises the following steps: performing transmission type testing on different transmission regions obtained by dividing a to-be-tested epitaxial thin film material sample and air, to obtain a time-domain waveform of a terahertz pulse transmission electric field; performing Fourier transform on the obtained time-domain waveform to obtain an amplitude spectrum and a phase spectrum of the electric field; calculating a complex refractive index of a substrate material according to the amplitude spectrum and the phase spectrum; constructing a transmission and reflection model for the substrate plus the epitaxial thin film material by taking into account multiple reflections inside the substrate material; obtaining a relationship between the complex permittivity of the epitaxial thin film material and the complex refractive index of the substrate material based on the transmission and reflection model, and inversely calculating the complex permittivity of the epitaxial thin film material. In the process of testing the complex permittivity of the epitaxial thin film material, the testing error introduced by multiple reflections inside the substrate material is taken into account, thereby improving the testing accuracy of the complex permittivity of the material.
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Citation Information

Patent Citations

  • Method for measuring material parameter and material thickness by using terahertz pulse

    CN106841095A

  • Device and method suitable for measuring dielectric parameter of high reflection material in terahertz frequency band

    CN109188105A