Unit for supplying chemicals and apparatus for processing substrates with the unit

Abstract

The present disclosure provides an apparatus for processing a substrate, including: a chemical discharge pipe; a cover configured to surround the chemical discharge pipe; a buffer disposed in a space between the chemical discharge pipe and the cover; a chemical supply device configured to supply a chemical to the chemical discharge pipe; a cleaning liquid supply device configured to supply a cleaning liquid via the cover; and a dry gas supply device configured to supply a dry gas via the cover, wherein the supplied cleaning liquid is sprayed by passing through the buffer via a space between an outside of the chemical discharge pipe and an inside of the cover to clean an end portion of the chemical discharge pipe, and the supplied dry gas is sprayed by passing through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cover to dry the end portion of the chemical discharge pipe.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2022-0096234, filed on August 2, 2022, with the Korean Intellectual Property Office, and all benefits arising therefrom under Section 119 of Volume 35 of the United States Patent and Trademark Office, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] This disclosure relates to a unit for supplying chemicals and an apparatus for processing substrates using the unit. Background Technology

[0004] Semiconductor devices can be manufactured by repeatedly performing a series of manufacturing processes on a silicon wafer used as a substrate. For example, a deposition process for forming a thin film on the substrate, a photolithography process for forming a photoresist pattern on the thin film, or an etching process for patterning or removing the thin film can be performed.

[0005] Etching processes can be divided into dry etching processes and wet etching processes. Wet etching processes can be further divided into single-type processes that process one single substrate at a time and batch-type processes that process multiple substrates simultaneously. During substrate rotation, a single-type etching apparatus can supply etchant to the substrate and remove the film through a reaction between the film and the etchant. Rotation can remove byproducts generated from the reaction and residual etchant from the substrate.

[0006] For example, in the case of forming a silicon nitride film on a substrate, the silicon nitride film can be removed using an etchant comprising phosphoric acid and water. In this case, to increase the reaction rate between the silicon nitride film and the etchant, the etchant can be heated and then supplied to the central portion of the substrate. The etchant can be diffused from the central portion of the substrate to its edge portions by rotating the substrate, and byproducts and etchant can be removed from the substrate by centrifugal force. Summary of the Invention

[0007] Meanwhile, contamination from processes influenced by various factors such as scattering or rebound can occur in nozzles configured to discharge chemicals. Improvements have been made to eliminate potential backflow contamination in the nozzles. Aspects of this disclosure provide a unit for supplying chemicals and an apparatus for processing a substrate using the unit, said unit being capable of cleaning the chemical discharge pipe constituting the nozzle.

[0008] The technical aspects of this disclosure are not limited to those described herein, and other unmentioned technical aspects will be clearly understood by those skilled in the art upon reference to the detailed description of this disclosure given below.

[0009] [Technical Solution]

[0010] According to an aspect of this disclosure, an apparatus for processing a substrate is provided, comprising: a chemical discharge pipe; a cap configured to surround the chemical discharge pipe; a buffer disposed in a space between the chemical discharge pipe and the cap; a chemical supply device configured to supply chemicals to the chemical discharge pipe; a cleaning liquid supply device configured to supply cleaning liquid via the cap; and a drying gas supply device configured to supply drying gas via the cap. The supplied cleaning liquid is sprayed through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cap to clean the end of the chemical discharge pipe, and the supplied drying gas is sprayed through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cap to dry the end of the chemical discharge pipe.

[0011] The buffer can form a first space and a second space, the second space being arranged adjacent to the first space and being arranged closer to the outlet of the chemical discharge pipe than the first space, and being configured to communicate with the first space, and the buffer also includes a separating member configured to separate the first space and the second space, and communicating between the first space and the second space.

[0012] The first space and the second space can be annular, and the first space can be formed to be larger than the second space.

[0013] The partition member may surround the chemical discharge pipe and have an annular structure, and may form a plurality of through holes in the radial direction, the plurality of through holes being configured to communicate between the first space and the second space.

[0014] The apparatus for processing the substrate may further include an intermediate component configured to: surround a chemical discharge pipe inside a cover; arrange a partition member transversely between a first space and a second space; and connect a cleaning liquid supply device and a drying gas supply device, such that cleaning liquid and drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to the first space of the buffer.

[0015] The intermediate component may also form a spiral hole through which cleaning liquid and drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to the first space, and the spiral hole is configured in a spiral shape, so that the cleaning liquid and drying gas can clean and dry the inside of the cover before passing through the buffer.

[0016] The apparatus for processing the substrate may further include: a cleaning liquid tube, the cleaning liquid being supplied from a cleaning liquid supply device to the cleaning liquid tube; and a drying gas tube, the drying gas being supplied from a drying gas supply device to the drying gas tube, and an intermediate component being in communication between the cleaning liquid tube and the drying gas tube.

[0017] The cover can also form a cleaning hole that connects to the second space.

[0018] The cleaning port can penetrate the cover in an inclined direction and may also include a main port, which is positioned adjacent to a substrate support member for supporting the substrate and configured to accommodate a chemical discharge pipe and a cover, and the cleaning liquid and drying gas discharged in an inclined direction through the cleaning port can be discharged toward the inner peripheral wall of the main port.

[0019] The lower end of the cap can be tapered, and a cleaning hole can be provided in the lower end of the cap.

[0020] According to an aspect of this disclosure, a unit for supplying chemicals is also provided, the unit comprising: a chemical supply device configured to supply chemicals; a cleaning liquid supply device configured to supply cleaning liquid; and a drying gas supply device configured to supply drying gas. The unit includes: a chemical discharge pipe to which the chemicals are supplied from the chemical supply device to the chemical discharge pipe; a cap surrounding the chemical discharge pipe, to which cleaning liquid is introduced from the cleaning liquid supply device to the cap, and to which drying gas is introduced from the drying gas supply device to the cap; and a buffer member disposed in a space between the chemical discharge pipe and the cap, and configured to form a first space and a second space, the second space being disposed adjacent to the first space and disposed closer to the outlet of the chemical discharge pipe and communicating with the first space than the first space. The supplied cleaning liquid is sprayed through the buffer member via the space between the outside of the chemical discharge pipe and the inside of the cap to clean the end of the chemical discharge pipe, and the supplied drying gas is sprayed through the buffer member via the space between the outside of the chemical discharge pipe and the inside of the cap to dry the end of the chemical discharge pipe.

[0021] The first space and the second space can be annular, and the first space can be formed to be larger than the second space.

[0022] The unit for supplying chemicals may further include a partition member configured to surround the chemical discharge pipe inside the cover and traverse between the first and second spaces. The partition member may surround the chemical discharge pipe and have an annular structure, and may form a plurality of through-holes radially configured to communicate between the first and second spaces.

[0023] The unit for supplying chemicals may further include an intermediate component having the separating component and configured to communicate between a cleaning liquid supply device and a drying gas supply device, such that cleaning liquid and drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to the first space.

[0024] The intermediate component may also form a spiral orifice through which cleaning liquid and drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to the first space, and the spiral orifice is configured in a spiral shape. The cleaning liquid and drying gas can clean and dry the interior of the cover via the spiral orifice before passing through the buffer member.

[0025] The unit for supplying chemicals may include: a cleaning liquid line, into which a cleaning liquid is supplied from a cleaning liquid supply device; and a drying gas line, into which a drying gas is supplied from a drying gas supply device. An intermediate component may connect the cleaning liquid line and the drying gas line.

[0026] The cover can also form a cleaning hole that connects to the second space.

[0027] The cleaning hole can penetrate the cover at an angle.

[0028] The lower end of the cap can be tapered, and a cleaning hole can be provided in the lower end of the cap.

[0029] Specific details of other embodiments are included in the detailed description and the accompanying drawings.

[0030] [Beneficial Effects]

[0031] The unit used to supply chemicals and the equipment used to process substrates by the unit can clean the chemical discharge pipes to prevent contamination that could affect the process. Attached Figure Description

[0032] The above and other aspects and features of this disclosure will become more apparent from the detailed description of exemplary embodiments thereof with reference to the accompanying drawings, in which:

[0033] Figure 1 This is a schematic diagram illustrating an apparatus for processing a substrate according to some embodiments of the present disclosure;

[0034] Figure 2 This is a schematic diagram showing the state in which a chemical supply unit of an apparatus for processing a substrate according to some embodiments of the present disclosure is arranged in the main port;

[0035] Figure 3 This is a schematic diagram illustrating the time it takes for fluid to be supplied to an apparatus for processing a substrate according to some embodiments of the present disclosure;

[0036] Figure 4 This is a schematic diagram illustrating a unit for supplying chemicals in an apparatus for processing a substrate according to a first embodiment of the present disclosure;

[0037] Figure 5 This is a schematic diagram showing the interior of a unit for supplying chemicals in an apparatus for processing a substrate according to a first embodiment of the present disclosure; and

[0038] Figure 6 This is a schematic diagram showing the interior of a unit for supplying chemicals in an apparatus for processing a substrate according to a second embodiment of the present disclosure. Detailed Implementation

[0039] In the following description, embodiments of the present disclosure will be described with reference to the accompanying drawings. The advantages and features of the present disclosure, as well as the methods for achieving these advantages and features, will become more apparent from the embodiments described in detail with reference to the drawings. However, the present disclosure is not limited to the disclosed embodiments, but can be implemented in various different ways. The embodiments are provided merely to complete the disclosure and to allow those skilled in the art to understand the category of the present disclosure. The present disclosure is defined by the category of the claims. Throughout the description of the drawings, similar numerals denote similar elements.

[0040] Although terms such as "first," "second," etc., are used to describe various elements, components, and / or parts, these elements, components, or parts are of course not limited to these terms. These terms are used only to distinguish one element, component, or part from another. Therefore, within the technical spirit of this disclosure, the first device, first component, or first part mentioned below can be a second device, second component, or second part.

[0041] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. In this specification, singular also includes plural unless otherwise specified in the phrase. As used herein, "comprising" and / or "including" means the presence of one or more other components, steps, operations, and / or elements, or does not exclude additions.

[0042] Figure 1 This is a schematic diagram illustrating an apparatus for processing a substrate according to some embodiments of the present disclosure. Figure 2 This is a schematic diagram illustrating the state in which a chemical supply unit of an apparatus for processing a substrate, according to some embodiments of the present disclosure, is disposed in the main port. Figure 3 This is a schematic diagram illustrating the timing of fluid supply to an apparatus for processing a substrate according to some embodiments of the present disclosure.

[0043] Figure 4This is a schematic diagram illustrating a unit for supplying chemicals in an apparatus for processing a substrate according to a first embodiment of the present disclosure. Figure 5 This is a schematic diagram showing the interior of a unit for supplying chemicals in an apparatus for processing a substrate according to a first embodiment of the present disclosure.

[0044] refer to Figures 1 to 5 The apparatus 100 for processing a substrate according to one embodiment of the present disclosure can exemplarily perform an etching process. However, the present disclosure is not limited thereto, and the apparatus 100 for processing a substrate can perform a photolithography process (photoprocessing) or a cleaning process, or can perform both photolithography and cleaning processes simultaneously. In other words, the apparatus 100 for processing a substrate according to this embodiment can perform multiple processes for processing a substrate by supplying chemicals. The etching process will be described below.

[0045] The apparatus 100 for processing a substrate can perform an etching process and a cleaning process together in a chamber. For example, a chemical supply unit 200 configured to supply chemicals for the etching process and a cleaning liquid supply nozzle 200A configured to supply cleaning liquid for the substrate can be mounted adjacent to each other on the upper part of the substrate support member 110. The cleaning liquid for the substrate described herein is provided as a cleaning liquid for cleaning the substrate, and the cleaning liquid discharged from the cleaning liquid supply device 160 described below can be distinguished from the cleaning liquid used for cleaning the end of the cleaning chemical discharge pipe 210L1. However, the types of these cleaning liquids can be the same.

[0046] For example, the chemicals used in the etching process can consist of phosphoric acid (H3PO4) as the etchant. The fluid used in the cleaning process for cleaning the substrate can consist of DIW as the cleaning liquid, and the cleaning liquid used for cleaning the chemical discharge pipe 210L1 can consist of the same or similar DIW as the cleaning liquid used for cleaning the substrate W.

[0047] Specifically, the device 100 for processing substrates may include a support member 110, a cup portion 130, a chemical supply unit 200, a chemical supply device 150, a cleaning liquid supply device 160, a drying gas supply device 170, and a main port 190.

[0048] A substrate support member 110 can support the substrate W during the process. The substrate support member 110 may be equipped with a support plate 111 having a circular upper surface, a pin member 112 mounted on the upper surface of the support plate 111, and a clamping pin 113. The pin member 112 can support the substrate W on its lower surface. The clamping pin 113 can support the side surfaces of the substrate W to align the substrate W, such that the substrate W is placed in a given position. Furthermore, the substrate support member 110 can be rotated during the process by a drive 120, such as a motor.

[0049] The cup portion 130 can be configured to surround the substrate support member 110. The cup portion 130 can have a cylindrical shape, but this disclosure is not limited thereto. An vent (not shown) can be formed in the lower wall of the cup portion 130. An vent pipe (not shown) can be mounted to communicate with the vent. An venting member (not shown), such as a pump, can be connected to the vent pipe. The venting member can provide negative pressure to expel air from the cup portion 130, the air containing chemicals scattered by the rotation of the substrate W.

[0050] When the chemical supply unit 200 performs the etching process, it can apply chemicals to the processing surface of the substrate W placed on the substrate support member 110. While waiting at the main port 190, the chemical supply unit 200 can receive fluids (e.g., etchant, cleaning liquid, and drying gas) from the chemical supply source.

[0051] For example, the chemical supply source may include a chemical supply device 150, a cleaning liquid supply device 160, and a drying gas supply device 170. The chemical supply device 150 supplies chemicals to a chemical discharge pipe 210L1, and the chemicals stored in the chemical supply device 150 herein may be etchants. The cleaning liquid supply device 160 supplies cleaning liquid (i.e., cleaning liquid for cleaning the end of the chemical discharge pipe 210L1) via a cover 220. The drying gas supply device 170 supplies drying gas via a cover 220. Furthermore, each of the chemical supply device 150, the cleaning liquid supply device 160, and the drying gas supply device 170 may be connected to the chemical discharge pipe 210L1, the cleaning liquid pipe 210L2, and the drying gas pipe 210L3, which are disposed in the chemical supply unit 200 through which fluids flow.

[0052] Additionally, the following will be referenced Figure 4 and Figure 5 Describe the internal structure of the chemical supply unit 200.

[0053] Since the chemical supply unit 200 can wait, the main port 190 can be positioned inside the chamber adjacent to the substrate support member 110 and accommodate the chemical discharge pipe 210L1 and the cap 220. The inner peripheral wall of the main port 190 can be cleaned by cleaning liquid discharged from the cap 220 in an inclined direction via the cleaning hole 221 of the cap 220, as described below.

[0054] refer to Figure 2 A hollow hole can be formed in the main port 190 to accommodate the chemical supply unit 200, and a baffle 191 can be provided to prevent fumes from flowing into the chemical supply unit 200. In this document, the baffle 191 can be arranged in an inclined shape, and an orifice 191H can be formed to allow fluid discharged from the chemical supply unit 200 to be discharged to the outside.

[0055] The following will refer to the diagram. 3 (Where the horizontal axis represents time and the vertical axis may represent flow rate) describes the fluids supplied / discharged from the substrate processing procedure (e.g., etchant, cleaning liquid, and drying gas). However, since the magnitude / ratio of flow rate to time is merely illustrative, this disclosure is not limited thereto. Furthermore, according to one embodiment, the flow rate and discharge time of the fluid can be controlled.

[0056] Before proceeding with the description, times t1 to t5 may refer to the time during which the chemical supply unit 200 waits at the main port 190. However, unlike the chemical supply unit 200, the cleaning liquid supply nozzle 200A may be configured to face the upper part of the substrate W and discharge cleaning liquid for the substrate into the substrate W, thereby forming a pre-wetting state of the substrate W.

[0057] Time periods t5 and t6 can refer to the etching process time during which the etchant is discharged while the chemical supply unit 200 is positioned above the substrate W by offsetting from the main port 190. Simultaneously, during the hours t5 to t6, the cleaning liquid supply nozzle 200A can be in a state that prevents the substrate cleaning liquid from being discharged. In other words, the arrangement and supply state of the chemical supply unit 200 and the cleaning liquid supply nozzle 200A can differ from each other during the hours t1 to t6. Furthermore, the times t6 to t7, not described here, can refer to the time for cleaning the substrate W.

[0058] Briefly describing the fluid supply of the cleaning liquid supply nozzle 200A, the chemical supply unit 200 can wait in the main port 190 before performing the etching process on the substrate W. In this case, the chemical supply unit 200 can perform a pre-dispensing operation, so that the etchant supplied from the chemical supply device 150 can be discharged to the main port 190 via the chemical supply unit 200.

[0059] In other words, the chemical supply unit 200 waiting at the main port 190 can receive and discharge etchant, so that the etchant supplied for the etching process of the previously treated substrate W can be discharged without remaining in the chemical discharge pipe 210L1 of the chemical supply unit 200, thereby injecting new etchant.

[0060] When the etchant is supplied from the main port 190 to the chemical supply unit 200, the chemical supply unit 200 can receive cleaning liquid and dry gas from the cleaning liquid supply device 160 and the dry gas supply device 170 for cleaning the end of the chemical discharge pipe 210L1, so that the end of the chemical discharge pipe 210L1 can be cleaned during the pre-dispensing operation of the chemical supply unit 100.

[0061] In this regard, it will be described below. Figure 3 The amount of fluid discharged relative to time.

[0062] First, the etchant (represented by phosphoric acid (H3PO4)) can be discharged via the chemical discharge pipe 210L1, and can be supplied from the chemical supply device 150 and discharged to the main port 190 within t1 to t2 hours. When the etchant is discharged to the main port 190 for pre-dispensing operation, the end of the chemical discharge pipe 210L1 needs to be cleaned so that the etchant does not remain on the end of the chemical discharge pipe 210L1.

[0063] To clean the end of the chemical discharge pipe 210L1, the chemical supply unit 200 may receive cleaning liquid (denoted by DIW) for end cleaning from the cleaning liquid supply device 160 within t2 to t3 hours. In this case, the cleaning liquid for end cleaning may be introduced into the chemical supply unit 200 via the cleaning liquid pipe 210L2, and then discharged to the main port 190 after passing through the buffer 230 surrounding the chemical discharge pipe 210L1.

[0064] Furthermore, a drying gas can be supplied so that the cleaning liquid used for end cleaning does not remain around the chemical discharge pipe 210L1, and the chemical supply unit 200 can receive drying gas from the drying gas supply device 170 via the drying gas pipe 210L3 within t3 to t4 hours to dry the end of the chemical discharge pipe 210L1. In this case, the drying gas can be discharged to the main port 190 after passing through the buffer 230 surrounding the chemical discharge pipe 210L1. In this embodiment, the drying gas can purge the buffer 230 and remove condensate from the end of the cleaning liquid.

[0065] In this document, the chemical discharge pipe 210L1, the cleaning liquid pipe 210L2, and the drying gas pipe 210L3 may be arranged adjacent to each other in the intermediate member 240, but they may also be arranged separately so that each fluid passes through these pipes individually.

[0066] Furthermore, since the temperature of the cleaning liquid may be lower than that of the etchant, and the flow rate of the cleaning liquid may be lower than that of the etchant, contamination that may occur in the main port 190 due to bounce can be significantly reduced or prevented compared to contamination by the cleaning liquid. In other words, since the cleaning liquid is discharged after the etchant, it can clean up bounce contamination caused by the etchant and simultaneously reduce bounce compared to the etchant. For example, the etchant supplied from the chemical supply device 150 may have a flow rate of 800 ml per minute and a temperature of 150°C to 175°C. The cleaning liquid supplied from the cleaning liquid supply device 160 may have a flow rate of 300 ml per minute and may be at room temperature.

[0067] In this way, the chemical supply unit 200 can perform a pre-dispensing operation at the main port 190, and the cleaning liquid supply nozzle 200A can also clean the substrate W. In other words, while the chemical supply unit 200 is waiting at the main port 190 before the etching process, cleaning liquid for the substrate can be discharged to pre-wet the substrate W, so that cleaning liquid for the substrate can be discharged via the cleaning liquid supply nozzle 200A within time t4 to t5.

[0068] In the following text, reference will be made to Figure 4 and Figure 5 Describe chemical supply unit 200.

[0069] The chemical supply unit 200 may include a chemical discharge pipe 210L1, a cover 220, a buffer 230, and an intermediate component 240.

[0070] The chemical discharge pipe 210L1 can be positioned with its end exposed outside the cover 220. The chemical discharge pipe 210L1 can be connected to the chemical supply device 150 and receive etchant, so that the etchant can be discharged onto the substrate W.

[0071] Since the cap 220 is a component that forms a space containing the buffer 230 around the chemical discharge pipe 210L1, the cap 220 can surround the chemical discharge pipe 210L1. The cap 220 can cover the chemical discharge pipe 210L1 to expose the end of the chemical discharge pipe 210L1, such that the end of the chemical discharge pipe 210L1 forms a nozzle structure. For example, the lower end of the cap 220 can have a tapered shape, and a cleaning hole 221 can be formed in the lower end of the cap 220.

[0072] Since the cleaning hole 221 is a component through which cleaning liquid is discharged to clean the inner wall of the main port 190, the cleaning hole 222 can communicate with the second space 232 of the cover 220. For example, the cleaning hole 221 can penetrate from the lower end of the cover 220 in an inclined direction. Furthermore, in Figure 4 Two cleaning holes 221 are shown, but this disclosure is not limited thereto. The cleaning holes 221 may be radially disposed in the lower end of the cover 220 to uniformly clean the circumferential surface of the inner wall of the main port 190.

[0073] The buffer element 230 can be disposed in the space between the chemical discharge pipe 210L1 and the cover 220. The buffer element 230 can refer to a portion of the area between the chemical discharge pipe 210L1 and the cover 220, such as... Figure 5 As shown. The buffer 230 can be configured to allow the cleaning liquid and the drying gas to remain in the buffer 230.

[0074] In other words, the cleaning liquid supplied from the cleaning liquid supply device 160 can be sprayed through the buffer 230 via the space between the outside of the chemical discharge pipe 210L1 and the inside of the cover 220, thereby cleaning the end of the chemical discharge pipe 210L1. The drying gas supplied from the drying gas supply device 170 can be sprayed through the buffer 230 via the space between the outside of the chemical discharge pipe 210L1 and the inside of the cover 220, thereby drying the end of the chemical discharge pipe 210L1.

[0075] For example, the buffer 230 may include a first space 231 and a second space 232. The first space 232 and the second space 232 may be separated by a separating member 241 of the intermediate member 240.

[0076] The first space 231 can be configured to be closer to the outlet of the cleaning liquid supply device 160 than the outlet (i.e., end) of the chemical discharge pipe 210L1. In other words, the first space 231 is located upstream of the second space 232 to form a space in which the cleaning liquid and drying gas reside, and the first space 231 is formed to be larger than the second space 232 so that the cleaning liquid and drying gas can reside sufficiently. Furthermore, the first space 231 and the second space 232 can be annular to uniformly clean and dry the inner circumference of the cover.

[0077] In short, when the size of the first space 231 is made too large, the time for discharging the drying gas may be delayed. Therefore, in order to prevent the processing time from being extended, and at the same time to form sufficient space for the fluid to remain inside the cover 220, the cleaning liquid and the drying gas can pass through the space between the chemical discharge pipe 210L1 and the cover 220 via the spiral hole 242 as described below.

[0078] The second space 232 can communicate with the first space 231 and is arranged to be adjacent to the first space 231, and is closer to the outlet of the chemical discharge pipe 210L1 than the first space 231, and can be formed to be smaller than the first space 231. In other words, the second space 232 can be located downstream of the first space 231, and can form a space through which fluids that remain in and are discharged from the first space 231 pass.

[0079] Furthermore, the second space 232 may have an outlet formed along the outer peripheral surface of the chemical discharge pipe 210L1 to clean and dry the end of the chemical discharge pipe 210, and may have a structure that tapers towards the outlet.

[0080] The buffer 230 can be divided into a first space 231 and a second space 232, and has an annular shape, so that the cleaning liquid can be evenly distributed throughout the buffer 230 without being concentrated in one area. Furthermore, the smaller space allows for a reduced filling and emptying time, thus facilitating the purging of the buffer 230 with dry gas. Because the buffer 230 purifies the first space 231 and the second space 232 sequentially, rather than filling and emptying them simultaneously, the filling and emptying time of the first space 231 can be equal to the purging time, which facilitates purging with dry gas.

[0081] In addition, in short, the spiral hole 242 can be used to avoid excessively increasing the first space 231, which can minimize or avoid the problem of increasing the amount of drying gas used to deal with residual cleaning liquid.

[0082] Intermediate member 240 may communicate with cleaning liquid supply device 160 and drying gas supply device 170, such that cleaning liquid and drying gas are supplied from cleaning liquid supply device 160 and drying air supply device 170 to the first space 231 of buffer member 230. Intermediate member 240 may be provided with partition member 241, said partition member 242 being configured to surround chemical discharge pipe 210L1 inside cover 220 and traverse between first space 231 and second space 232, and may have helical holes 242 formed therein.

[0083] The partition member 241 can separate the first space 231 and the second space 232. The partition member 241 can surround the chemical discharge pipe 210L1 and has an annular structure, and can form a plurality of through holes 241H in the radial direction, which are configured to communicate between the first space 231 and the second space 232. Therefore, cleaning liquid and drying gas can be uniformly discharged from the first space 231 to the second space 232.

[0084] Furthermore, the partition member 241 can separate the first space 231 and the second space 232; however, as described above, the space can be separated at a position where the first space 231 is formed larger than the second space 232, which can sufficiently ensure the time that the cleaning liquid remains in the first space 232 by means of the partition member 241.

[0085] On the other hand, although it is shown that the separating member 241 and the intermediate member 240 are integrally formed in this embodiment, this disclosure is limited thereto. Reference will now be made to... Figure 6 Describe another possible modification.

[0086] The spiral hole 242 can be formed as a spiral hole in the intermediate member 240 to form a movement path through which cleaning liquid and drying gas are supplied from the cleaning liquid supply device 160 and the drying gas supply device 170 to the first space 231. In other words, before the cleaning liquid and drying gas pass through the buffer member 240, the cleaning liquid and drying gas can clean and dry the interior of the cover 220 via the spiral hole 242.

[0087] The spiral orifice 242 optimizes the space of the buffer 230. In other words, an excessive increase in the size of the buffer 230 would lead to an increase in the space (volume of the buffer 230) where the cleaning liquid would reside, thus requiring an increase in the amount of drying gas to prevent the cleaning liquid from accumulating, which could delay the working time. To avoid this concern, a spiral orifice 242 is provided in the upstream space of the buffer 230, the spiral orifice 242 having a flow path formed in a spiral shape. By using the spiral orifice 242 to clean and dry the upstream space of the buffer 230, the space of the buffer 230 can be correspondingly made smaller. Therefore, the time for filling or emptying the buffer 230, which can be formed into a small space, can be reduced. Thus, there is no need to increase the flow rate of the filling space due to an excessively large space of the buffer 230, which prevents delays in the working time.

[0088] In the following text, reference will be made to Figure 6 This embodiment describes a modified scheme, and will omit repeated descriptions of configurations that have the same functions as described above.

[0089] Figure 6 This is a schematic diagram showing the interior of a unit for supplying chemicals in an apparatus for processing a substrate according to a second embodiment of the present disclosure. (Reference) Figure 6 The main descriptions and references Figure 4 and Figure 5 The differences in the content described.

[0090] refer to Figure 6The chemical supply unit 200 includes a chemical discharge pipe 210L1, a cap 220, a buffer 230, and an intermediate component 240 that are the same as or similar to those in the first embodiment. However, the difference is that in the second embodiment, the intermediate component 240 is not integrally formed with the partition component 241, but is separate from the partition component 241.

[0091] In other words, the partition member 241 of this embodiment can separate the first space 231 and the second space 232 in the same or similar manner as in the first embodiment. Unlike the first embodiment, the partition member 241 can be separated from the intermediate member 240 in an unconnected form, so that at least a portion of the inner circumferential surface of the cover 220 and the chemical discharge pipe 210L1 can be exposed to the first space 231.

[0092] For example, the partition member 241 may have the same or similar annular structure as in the first embodiment, and may form a plurality of through holes 241H in the radial direction. However, unlike the first embodiment, the partition member 241, which is separated from the intermediate member 240 in an unconnected form, may be provided with a protrusion 241A that extends in the longitudinal direction consistent with the chemical discharge pipe 210L1, such that the partition member 242 is horizontal and not tilted. However, since the protrusion 241A is intended to maintain the horizontality of the partition member 241, various modifications can be made, such as the protrusion 241A being positioned adjacent to the cap 220 while extending in the longitudinal direction along the inner circumferential surface of the cap 220.

[0093] Furthermore, the configuration described in this embodiment can form various modified embodiments, so the first embodiment and the second embodiment can be combined. Additionally, the partition member 241 of the first embodiment can be integrally connected to the intermediate member 240; however, as another variation, the connection portion may not be configured to surround the chemical discharge pipe 210L1, and the intermediate member 240 and the chemical discharge pipe 210 may be connected at their contact points with the inner wall of the cover 220. Therefore, the outer periphery of the chemical discharge pipe 210L1 can be exposed from the intermediate member 240 to the periphery of the first space 231.

[0094] Alternatively, various modifications can be made to the pin (not shown), which can be connected between the chemical discharge pipe 210L1 and the inner peripheral surface of the cover 220, such that the connection of the separator 241 to the intermediate member 240 does not contact the inner peripheral surface of the cover 220, and does not surround the chemical discharge pipe 210L1.

[0095] In other words, the intermediate member 240 and the partition member 241 can be modified in various ways to clean the outer peripheral surface of the chemical discharge pipe 210L1 and the interior of the cover 220 via the first space 231.

[0096] The apparatus 100 for processing substrates according to the above embodiment can clean the chemical discharge pipe 210L1 to prevent contamination from affecting the process.

[0097] Although embodiments of the present disclosure have been described above with reference to the accompanying drawings, the present disclosure is not limited to the disclosed embodiments, but can be implemented in various different ways, and the present disclosure can be presented in many different forms without changing the technical subject matter and essential features as will be understood by those skilled in the art. Therefore, the embodiments described herein are merely exemplary and should not be construed as limiting.

[0098] [Explanation of reference numerals in the attached diagram]

[0099] 100: Equipment used for processing substrates

[0100] 110: Supporting components

[0101] 130: Cup section

[0102] 190: Main port

[0103] 200: Chemical Supply Unit

[0104] 210L1: Chemical Discharge Pipe

[0105] 220: Cover

[0106] 230: Buffer

[0107] 240: Intermediate component

Claims

1. An apparatus for processing a substrate, comprising: Chemical discharge pipe; A cover is configured to surround the chemical discharge pipe; A buffer element is disposed in the space between the chemical discharge pipe and the cover; A chemical supply device is configured to supply chemicals to the chemical discharge pipe; A cleaning liquid supply device is configured to supply cleaning liquid via the cover; as well as A drying gas supply device is configured to supply drying gas via the cover. The supplied cleaning liquid is sprayed through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cap to clean the end of the chemical discharge pipe. The supplied drying gas is injected through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cover to dry the end of the chemical discharge pipe; The buffer element forms a first space and a second space. The second space is positioned adjacent to the first space, and is located closer to the outlet of the chemical discharge pipe than the first space, and is configured to communicate with the first space. The buffer includes an intermediate member configured to: surround the chemical discharge pipe inside the cover; and communicate between the cleaning liquid supply device and the drying gas supply device, such that the cleaning liquid and the drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to a first space of the buffer; The intermediate component also forms a spiral orifice through which the cleaning liquid and the drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to the first space, and the spiral orifice is configured in a spiral shape. The cleaning liquid and the drying gas clean and dry the inside of the cover via the spiral holes before passing through the buffer.

2. The apparatus for processing a substrate according to claim 1, wherein the buffer further comprises a separating member configured to separate the first space and the second space and to communicate between the first space and the second space.

3. The apparatus for processing a substrate according to claim 2, wherein, The first space and the second space are circular. The first space is formed to be larger than the second space.

4. The apparatus for processing a substrate according to claim 2, wherein, The partition member surrounds the chemical discharge pipe and has an annular structure, and forms a plurality of through holes in the radial direction, the plurality of through holes being configured to communicate between the first space and the second space.

5. The apparatus for processing a substrate according to claim 2, wherein the intermediate member is configured to arrange the separating member transversely between the first space and the second space.

6. The apparatus for processing a substrate according to claim 5, further comprising: A cleaning liquid pipe, wherein the cleaning liquid is supplied from the cleaning liquid supply device to the cleaning liquid pipe; as well as A drying gas pipe, wherein the drying gas is supplied from the drying gas supply device to the drying gas pipe. The intermediate component is connected between the cleaning liquid pipe and the drying gas pipe.

7. The apparatus for processing a substrate according to claim 2, wherein, The cover also forms a cleaning hole that communicates with the second space.

8. The apparatus for processing a substrate according to claim 7, wherein, The cleaning port extends obliquely from the cover and also includes a main port positioned adjacent to a substrate support member for supporting the substrate and configured to receive the chemical discharge tube and the cover. The cleaning liquid and the drying gas, discharged in an inclined direction through the cleaning hole, are directed toward the inner peripheral wall of the main port.

9. The apparatus for processing a substrate according to claim 8, wherein, The lower end of the cover has a tapered shape, and The cleaning hole is located in the lower end of the cover.

10. A unit for supplying chemicals, comprising: A chemical supply unit, configured to supply chemicals; A cleaning liquid supply device is configured to supply cleaning liquid; and a drying gas supply device, configured to supply drying gas, the unit comprising: A chemical discharge pipe, wherein the chemicals are supplied from the chemical supply device to the chemical discharge pipe; A cover, the cover surrounding the chemical discharge pipe, the cleaning liquid being introduced from the cleaning liquid supply device into the cover, and the drying gas being introduced from the drying gas supply device into the cover; and A buffer element is disposed in the space between the chemical discharge pipe and the cap, and is configured to form a first space and a second space, the second space being adjacent to the first space and being configured to be closer to the outlet of the chemical discharge pipe and communicating with the first space than the first space. The supplied cleaning liquid is sprayed through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cap to clean the end of the chemical discharge pipe. The supplied drying gas is injected through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cover to dry the end of the chemical discharge pipe; The buffer includes an intermediate member configured to: surround the chemical discharge pipe inside the cover; and communicate between the cleaning liquid supply device and the drying gas supply device, such that the cleaning liquid and the drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to a first space of the buffer; The intermediate component also forms a spiral orifice through which the cleaning liquid and the drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to the first space, and the spiral orifice is configured in a spiral shape. The cleaning liquid and the drying gas clean and dry the inside of the cover via the spiral holes before passing through the buffer.

11. The unit for supplying chemicals according to claim 10, wherein the first space and the second space are annular. in, The first space is larger than the second space.

12. The unit for supplying chemicals according to claim 10, further comprising a partition member configured to surround the chemical discharge pipe inside the cover and traverse between the first space and the second space. in, The partition member surrounds the chemical discharge pipe and has an annular structure, and forms a plurality of through holes in the radial direction, the plurality of through holes being configured to communicate between the first space and the second space.

13. The unit for supplying chemicals according to claim 12, wherein the intermediate member is provided with the separating member and is configured to communicate between the cleaning liquid supply device and the drying gas supply device, such that the cleaning liquid and the drying gas are supplied from the cleaning liquid supply device and the drying gas supply device to the first space.

14. The unit for supplying chemicals according to claim 10, further comprising: A cleaning liquid pipe, wherein the cleaning liquid is supplied from the cleaning liquid supply device to the cleaning liquid pipe; as well as A drying gas pipe, wherein the drying gas is supplied from the drying gas supply device to the drying gas pipe. The intermediate component is connected between the cleaning liquid pipe and the drying gas pipe.

15. The unit for supplying chemicals according to claim 10, wherein, The cover also forms a cleaning hole that communicates with the second space.

16. The unit for supplying chemicals according to claim 15, wherein, The cleaning hole penetrates the cover at an angle.

17. The unit for supplying chemicals according to claim 15, wherein, The lower end of the cover has a tapered shape, and The cleaning hole is located in the lower end of the cover.

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