5g dual-band transceiver with high image rejection

By combining a bidirectional mixer with image suppression, a dual-band power amplifier, and a low-noise amplifier, the problem of insufficient image suppression in 5G communication is solved, achieving efficient image suppression, reducing chip area and cost, and making it suitable for multi-band communication.

CN117526974BActive Publication Date: 2026-04-24TIANJIN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TIANJIN UNIV
Filing Date
2022-07-29
Publication Date
2026-04-24

AI Technical Summary

Technical Problem

In existing 5G communication technologies, traditional solutions require the simultaneous integration of multiple transceiver links operating in different frequency bands, which increases chip area and cost, and results in insufficient image suppression.

Method used

It adopts an architecture based on a bidirectional mixer with image rejection, combined with a dual-frequency power amplifier with filtering response and a low-noise amplifier, to achieve an image rejection effect of >60dB, supports 28/39GHz dual-frequency bidirectional transmission and reception, and achieves different frequency bands and transmission/reception switching by switching the bias.

Benefits of technology

Significantly reduces chip area and lowers cost, supports 28/39GHz discontinuous carrier aggregation, suitable for commercial mobile terminals, covering multiple frequency bands such as satellite communication, 4G, 5G, WiFi, and UWB.

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Abstract

The application discloses a 5G dual-frequency bidirectional transceiver with high image rejection, which comprises a dual-frequency power amplifier with a filter response and a dual-frequency low-noise amplifier with a filter response; the dual-frequency power amplifier and the dual-frequency low-noise amplifier are connected with a dual-frequency transceiving unit through a power distribution / synthesis network; the dual-frequency transceiving unit comprises two transceiving modules, and each transceiving module comprises a broadband intermediate frequency switch, a broadband intermediate frequency bidirectional amplifier, a broadband intermediate frequency quadrature signal generator and an image rejection bidirectional mixer which are sequentially connected along a signal transmission direction; the power distribution / synthesis network is connected with the image rejection bidirectional mixer. The application adopts the image rejection bidirectional mixer structure, cooperates with the dual-frequency power amplifier and the dual-frequency low-noise amplifier, and can realize an ultra-high image rejection of >60 dB, and is suitable for the dual-frequency bidirectional transceiving of 5G.
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Description

Technical Field

[0001] This invention relates to the field of communication technology, and specifically to a 5G dual-band bidirectional transceiver with high image rejection. Background Technology

[0002] 5G communication technology improves communication speed and bandwidth while significantly reducing communication latency. 5G millimeter-wave communication frequency bands are mainly distributed in 26 / 28 / 37 / 39GHz. To enable base stations and handheld mobile devices to support multi-band switching of 5G millimeter-wave, traditional solutions require the simultaneous integration of multiple transceiver links operating in different frequency bands, increasing chip area and cost. Summary of the Invention

[0003] The purpose of this invention is to address the technical deficiencies in the existing technology by providing a 5G dual-band bidirectional transceiver with high image rejection. It adopts an architecture based on an image rejection bidirectional mixer, combined with a dual-band power amplifier with filtering response and a dual-band low-noise amplifier, which can achieve an ultra-high image rejection of >60dB, and is suitable for 5G 28 / 39GHz dual-band bidirectional transceiver.

[0004] The technical solution adopted to achieve the purpose of this invention is:

[0005] A 5G dual-band bidirectional transceiver with high image rejection includes:

[0006] A dual-frequency power amplifier with filtering response and a dual-frequency low-noise amplifier with filtering response;

[0007] The dual-frequency power amplifier and the dual-frequency low-noise amplifier are connected to the dual-frequency transceiver unit via a power distribution / combining network. The dual-frequency transceiver unit includes two transceiver modules. Along the signal transmission direction, each transceiver module includes a broadband intermediate frequency switch, a broadband intermediate frequency bidirectional amplifier, a broadband intermediate frequency quadrature signal generator, and a mirror rejection bidirectional mixer connected in sequence. The power distribution / combining network is connected to the mirror rejection bidirectional mixer.

[0008] The dual-frequency power amplifier is used to amplify the radio frequency signal input from the image-rejection bidirectional mixer through the power distribution / combining network and output it to the antenna for transmission when transmitting signals through the transmit link; the dual-frequency low-noise amplifier is used to amplify the radio frequency signal received by the antenna and output it to the radio frequency terminal of the image-rejection bidirectional mixer through the power distribution / combining network when receiving signals through the receive link.

[0009] The image suppression bidirectional mixer uses the quadrature local oscillator signal provided by the quadrature local oscillator signal generation module to mix the input quadrature intermediate frequency signal or the input radio frequency signal and output a signal with suppressed image frequency. In the transmit state, it outputs an up-converted single-sideband radio frequency signal and in the receive state, it outputs a down-converted single-sideband intermediate frequency signal. The dual-frequency power amplifier and the dual-frequency low-noise amplifier can both operate in two frequency bands. The dual-frequency power amplifier and the dual-frequency low-noise amplifier achieve switching between different frequency bands and transmit / receive operations by switching the bias.

[0010] The local oscillator signal generation module includes a phase-locked loop and a local oscillator quadrature signal generator connected in sequence. The output of the local oscillator quadrature signal generator is connected to the local oscillator terminal of the image suppression bidirectional mixer through a local oscillator drive amplifier or a local oscillator phase switching drive amplifier. After the phase-locked loop generates a local oscillation signal, it is converted into a local oscillator quadrature signal by the local oscillator quadrature signal generator, and then input to the local oscillator terminal of the image suppression bidirectional mixer after passing through the local oscillator drive amplifier or the local oscillator phase switching drive amplifier.

[0011] The local oscillator quadrature signal generator uses a high-order coupling coupler structure to generate orthogonal local oscillator signals.

[0012] The phase-locked loop operates at 30-37 GHz, the local oscillator quadrature signal generator operates at 2-10.6 GHz, and the local oscillator drive amplifier operates at 2-10.6 GHz.

[0013] The image suppression bidirectional mixer includes two passive bidirectional mixers that operate in different frequency bands to achieve dual-band coverage of the image suppression structure. During transmission, the input quadrature intermediate frequency (IF) signal is converted into a radio frequency (RF) signal based on the input local oscillator quadrature signal. During reception, the input RF signal is converted into an IF signal based on the input local oscillator quadrature signal. Then, the output signals of the two passive bidirectional mixers are mixed and output to obtain a signal with image frequency suppressed.

[0014] The passive bidirectional mixer adopts a dual-balanced architecture, a single-balanced architecture, or a dual-dual-balanced architecture.

[0015] The dual-frequency power amplifier includes two narrowband driver stages operating in different frequency bands and a broadband output stage operating in a broadband frequency band. The two narrowband driver stages are connected in parallel at their output terminals and then connected to the input terminal of the broadband output stage through an inter-stage matching network. Each narrowband driver stage includes a narrowband input stage amplifier and a narrowband driver stage amplifier connected to the narrowband input stage amplifier through an inter-stage matching network.

[0016] The dual-frequency power amplifier has three operating modes: 28GHz single-frequency filter response, 39GHz single-frequency filter response, and 28GHz and 39GHz broadband response.

[0017] The dual-frequency low-noise amplifier includes a broadband low-noise input stage operating in a wideband and two narrowband driver stages operating in different frequency bands. The inputs of the two narrowband driver stages are connected in parallel and then connected to the output of the broadband low-noise input stage through a broadband inter-stage matching network. Each narrowband driver stage includes a narrowband driver stage amplifier and a narrowband output stage amplifier connected to the narrowband driver stage amplifier through an inter-stage matching network.

[0018] The dual-frequency low-noise amplifier has three operating modes: 28GHz single-frequency filter response, 39GHz single-frequency filter response, and 28GHz and 39GHz broadband response.

[0019] The broadband output stage of the dual-frequency power amplifier and the broadband low-noise input stage of the dual-frequency low-noise amplifier adopt a bidirectional amplifier design and share a matching network.

[0020] The broadband intermediate frequency bidirectional amplifier is used to amplify the intermediate frequency signal according to the strength requirements of the received or transmitted signal. It employs two broadband intermediate frequency gain-adjustable amplifiers, which are used to amplify the signal in the receiving mode and the transmitting mode of the dual-frequency bidirectional transceiver, respectively, or it can be implemented by a single broadband intermediate frequency bidirectional amplifier capable of bidirectional signal amplification.

[0021] The intermediate frequency broadband variable gain amplifier adopts a current rudder structure based on transistor parasitic effect compensation to achieve low parasitic phase shift.

[0022] The intermediate frequency broadband variable gain amplifier is a differential circuit, comprising a differential common gate transistor and a digitally controlled common gate transistor circuit, a parasitic compensation circuit, and a transistor circuit providing constant current, connected sequentially from the input to the output. The differential common gate transistor and the digitally controlled common gate transistor circuit are cross-coupled to achieve digitally controlled variable gain signal amplification. The parasitic compensation circuit is used to compensate for the output parasitic parameters of the common gate transistor and the digitally controlled common gate transistor. The transistor circuit providing constant current also provides a suitable output impedance for matching.

[0023] The intermediate frequency broadband switch selects the corresponding intermediate frequency broadband variable gain amplifier to amplify the signal when switching between the receiving mode and the transmitting mode.

[0024] The intermediate frequency broadband switch operates in the 2-10.6 GHz range, covering satellite communication, 4G, 5G, WiFi, and UWB frequency bands.

[0025] The WLCSP packaging process is used, and solder balls are used to flip-chip solder the active side of the dual-frequency bidirectional transceiver chip onto the PCB board.

[0026] The image-suppression passive bidirectional mixer used in this invention has two mixers operating in different frequency bands, achieving dual-band coverage of the image-suppression structure.

[0027] The image-suppressing bidirectional mixer of the present invention, in transmit mode, can input an intermediate frequency signal at the intermediate frequency (IF) end and output a modulated single-sideband radio frequency signal at the radio frequency (RF) end to achieve upconversion with image suppression function; in receive mode, can input an radio frequency signal at the radio frequency (RF) end and output a demodulated single-sideband intermediate frequency signal at the intermediate frequency (IF) end, and its output state can be selected by a switch.

[0028] The image suppression bidirectional mixer of this invention employs a passive bidirectional mixer with a wideband double-balanced structure, which provides high isolation between input signals and can cancel out spurious signals generated during the mixing process.

[0029] The broadband output stage of the dual-frequency power amplifier and the input stage of the dual-frequency low-noise amplifier of this invention adopt a bidirectional amplifier design and share a matching network, which effectively improves the transmission efficiency and reduces the receiving noise figure.

[0030] This invention employs a bidirectional mixer with image rejection, combined with a dual-frequency power amplifier and a low-noise amplifier that have frequency selection function, which can significantly improve the image rejection of the system and achieve image rejection of more than 60dB.

[0031] This invention supports a large mid-frequency bandwidth of 2-10.6GHz, covering multiple frequency bands such as satellite communication, 4G, 5G, WiFi, and UWB.

[0032] This invention is a 5G dual-band bidirectional transceiver with high image rejection, which can operate in two frequency bands, 28 / 39GHz, and supports application scenarios of 28 / 39GHz non-continuous carrier aggregation. It significantly reduces chip area and chip cost, which is in line with the development trend of low cost, miniaturization and lightweight of commercial mobile terminal products. It has a wide range of application fields and application prospects, such as medical, radar and VR. Attached Figure Description

[0033] Figure 1 This is a first structural schematic diagram of a 5G dual-band bidirectional transceiver with high image rejection provided in an embodiment of the present invention;

[0034] Figure 2 This is a schematic diagram of the second structure of a 5G dual-band bidirectional transceiver with high image rejection provided in an embodiment of the present invention;

[0035] Figure 3This is a schematic diagram of the third structure of a 5G dual-band bidirectional transceiver with high image rejection provided in an embodiment of the present invention;

[0036] Figure 4 This is a schematic diagram of the fourth structure of the 5G dual-band bidirectional transceiver with high image rejection provided in an embodiment of the present invention;

[0037] Figure 5 This is a schematic diagram of the structure of the dual-frequency power amplifier provided in an embodiment of the present invention;

[0038] Figure 6 This is a schematic diagram of the structure of the dual-frequency low-noise amplifier provided in an embodiment of the present invention;

[0039] Figure 7 This is a schematic diagram of the shared matching network for the dual-frequency power amplifier and the dual-frequency low-noise amplifier provided in an embodiment of the present invention;

[0040] Figure 8 This is a schematic diagram of another common matching network for the dual-frequency power amplifier and the dual-frequency low-noise amplifier provided in the embodiments of the present invention;

[0041] Figure 9 This is a schematic diagram of the structure of the intermediate frequency broadband variable gain amplifier provided in an embodiment of the present invention;

[0042] Figure 10 This is a schematic diagram of the connection structure of an existing intermediate frequency broadband variable gain amplifier;

[0043] Figure 11 This is a schematic diagram of the connection structure of the intermediate frequency broadband variable gain amplifier provided in an embodiment of the present invention;

[0044] Figure 12 This is a schematic diagram of a mid-frequency quadrature signal generator provided in an embodiment of the present invention;

[0045] Figure 13 This is a schematic diagram of another structure of the intermediate frequency quadrature signal generator provided in an embodiment of the present invention;

[0046] Figure 14 This is a schematic diagram of a passive bidirectional mixer with a dual-balanced structure provided in an embodiment of the present invention.

[0047] Figure 15 This is a schematic diagram of a passive bidirectional mixer with a single-balance structure provided in an embodiment of the present invention;

[0048] Figure 16 This is a schematic diagram of a passive bidirectional mixer with a dual-balanced structure provided in an embodiment of the present invention.

[0049] Figure 17This is a schematic diagram of the local oscillator phase switching drive amplifier structure provided in an embodiment of the present invention;

[0050] Figure 18 This is a schematic diagram of the WLCSP packaging structure provided in an embodiment of the present invention;

[0051] Explanation of reference numerals in the attached figures:

[0052] 1. Dual-band power amplifier; 2. Dual-band low-noise amplifier; 3. Image-rejection bidirectional mixer; 4. Wideband IF variable gain amplifier; 5. Wideband IF quadrature signal generator; 6. Local oscillator quadrature signal generator; 7. Wideband IF switch; 8. Local oscillator driver amplifier; 9. Phase-locked loop; 11. Power distribution / combining network; 12. Local oscillator phase-switching driver amplifier; 13. Wideband IF bidirectional amplifier; 14. Antenna; 15. Multi-channel power distribution / combining network; 16. Multiple phase-shifting channels; 17. Antenna array; 18. First-band narrowband input stage amplifier; 19. First-band narrowband driver stage amplifier; 20. Second-band narrowband input stage amplifier; 21. Second-band narrowband driver stage amplifier; 22. Wideband output stage amplifier; 23. First-band... 24. Interstage matching network, 25. Second band interstage matching network, 26. Wideband interstage matching network, 27. Wideband low-noise input stage, 28. First band narrowband driver stage, 29. First band narrowband output stage, 30. Second band narrowband driver stage, 31. Second band narrowband output stage, 32. Wideband matching network, 33. Low-noise amplifier first band interstage matching network, 34. Low-noise amplifier second band interstage matching network, 35. Fully shared matching network, 36. Partially shared matching network, 37. First coupler unit, 38. Second coupler unit, 39. Third coupler unit, 40. Fourth coupler unit, 41. Fifth coupler unit, 42. Sixth coupler unit, 43. Local oscillator in-phase amplifier, 44. Local oscillator in-phase amplifier. Detailed Implementation

[0053] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention.

[0054] The 5G dual-band bidirectional transceiver with high image rejection in this embodiment of the invention can operate in two frequency bands, such as 28 / 39GHz, and has two transceiver modules. Each transceiver module has a transmit link and a receive link to realize bidirectional transmission function. It includes a dual-band power amplifier for the transmit link, a dual-band low-noise amplifier for the receive link, an image rejection bidirectional mixer for the transmit and receive links, a wideband intermediate frequency variable gain amplifier, a wideband intermediate frequency quadrature signal generator, a wideband intermediate frequency switch, a phase-locked loop, a local oscillator quadrature signal generator, and a local oscillator drive amplifier.

[0055] A dual-band power amplifier is used to amplify the radio frequency signal input from the image-rejection bidirectional mixer when transmitting signals, and output the amplified radio frequency signal to the antenna for transmission; a dual-band low-noise amplifier is used to amplify the radio frequency signal received by the antenna when receiving signals, and input it to the radio frequency terminal of the image-rejection bidirectional mixer.

[0056] The image-suppression bidirectional mixer is used to convert RF and IF signals, supports up-conversion and down-conversion, and shares a mixer between the transmit and receive links: In transmit mode, an IF signal can be input at the IF end and a modulated single-sideband RF signal can be output at the RF end, realizing up-conversion with image suppression function; In receive mode, an RF signal can be input at the RF end and a demodulated single-sideband IF signal can be output at the IF end, and the output state of the single-sideband IF signal can be selected by a broadband IF switch.

[0057] The broadband intermediate frequency variable gain amplifier can be composed of two variable gain amplifiers. When transmitting a signal, one variable gain amplifier amplifies the input intermediate frequency signal, and when receiving a signal, the other variable gain amplifier amplifies the intermediate frequency signal output by the image suppression bidirectional mixer to achieve bidirectional amplification.

[0058] The broadband intermediate frequency quadrature signal generator is used to convert the intermediate frequency signal output by the broadband intermediate frequency variable gain amplifier into a broadband intermediate frequency quadrature signal.

[0059] The broadband intermediate frequency switch is used to switch the intermediate frequency transmission link and the receiving link;

[0060] During transmission, the local oscillator quadrature signal and the broadband intermediate frequency quadrature signal are used to generate the required radio frequency signal through a mirror suppression bidirectional mixer, which is then amplified by a dual-frequency power amplifier and output to the antenna for transmission.

[0061] In receive mode, the RF signal output by the dual-frequency low-noise amplifier and the amplified local oscillator quadrature signal enter the image-rejection bidirectional mixer. The image-rejection bidirectional mixer generates a down-converted single-sideband intermediate frequency signal, which is then amplified by a broadband intermediate frequency variable gain amplifier to obtain the intermediate frequency signal output.

[0062] When the dual-frequency power amplifier and the dual-frequency low-noise amplifier are in the off state, their parasitic capacitances can be used as matching elements and integrated into the broadband matching network.

[0063] The dual-frequency power amplifier and the dual-frequency low-noise amplifier can both operate in two frequency bands. By switching the bias, the operating state of the dual-frequency power amplifier and the dual-frequency low-noise amplifier can be changed, thereby realizing the switching of the operating frequency band and the switching of the transceiver channel.

[0064] The dual-frequency power amplifier has two signal input terminals and one signal output terminal. Its two input terminals are respectively connected to the corresponding power distribution / combining network. The dual-frequency low-noise amplifier has two signal output terminals and one signal input terminal. Its two signal output terminals are respectively connected to the corresponding power distribution / combining network. The two power distribution / combining networks are connected to the corresponding image rejection bidirectional mixer.

[0065] The signal output terminal of the dual-frequency power amplifier and the signal input terminal of the dual-frequency low-noise amplifier can be connected in parallel and then connected to the antenna through a matching network to output or receive radio frequency signals.

[0066] As an example, the bidirectional amplification structure formed by the broadband intermediate frequency variable gain amplifier can also be replaced by a broadband intermediate frequency bidirectional amplifier 13. The broadband intermediate frequency bidirectional amplifier 13 can be a bidirectional amplifier with bidirectional amplification function, such as... Figure 2 As shown.

[0067] Furthermore, the local oscillator drive amplifier can also be implemented using a local oscillator phase-switching drive amplifier 12. Using this local oscillator phase-switching drive amplifier 12, not only can phase drive amplification be achieved, but phase switching can also be realized, such as... Figure 2 As shown.

[0068] It should be noted that when using a local oscillator drive amplifier, the intermediate frequency broadband quadrature signal generator is a bidirectional quadrature signal generator. When this bidirectional quadrature signal generator receives the intermediate frequency signal output from the image-rejection bidirectional mixer, it performs quadrature processing on the intermediate frequency signal output from the image-rejection bidirectional mixer. However, when using a local oscillator phase-switching drive amplifier, the intermediate frequency broadband quadrature signal generator can be a unidirectional quadrature signal generator. The local oscillator phase-switching drive amplifier is used to amplify and invert the local oscillator quadrature signal when receiving signals in receive mode, and then input it to the image-rejection bidirectional mixer. In transmit mode, no inversion processing is required when transmitting signals.

[0069] In transmit mode, the intermediate frequency (IF) signal is amplified by the IF broadband bidirectional amplifier 13 and then the IF broadband quadrature signal generator 5 generates a quadrature IF signal. The local oscillator (LO) signal is generated by the LO quadrature signal generator 6 and then input to the IF and LO terminals of the two passive bidirectional mixers of the image suppression bidirectional mixer 3, respectively. The radio frequency (RF) signals output by the two passive bidirectional mixers are combined by the power distribution / combining network 11 to obtain the up-converted single-sideband (SSB) RF signal, which is then amplified by the dual-frequency power amplifier 1 and transmitted into space by the antenna.

[0070] In receive mode, the antenna inputs the received RF signal into the dual-band low-noise amplifier, which then passes through the power distribution / combining network 11 and is input to the RF terminals of the two passive bidirectional mixers of the image suppression mixer 3. The local oscillator phase switching drive amplifier 12 inverts the input local oscillator quadrature signal to obtain the down-converted single-sideband intermediate frequency signal, which is then amplified and output by the intermediate frequency broadband bidirectional amplifier 13.

[0071] As one embodiment, it includes an antenna array 17, multiple phase-shifting channels (PS) 16, and a multi-channel power distribution network 15 connected in sequence. The input terminal of the dual-band low-noise amplifier 2 and the output terminal of the dual-band power amplifier 1 are connected to the multi-channel power distribution network 15. Figure 4 As shown.

[0072] In the above embodiment, in the transmission mode, the intermediate frequency (IF) signal is amplified by the IF broadband variable gain amplifier 4, and then the broadband IF quadrature signal generator 5 generates a quadrature IF signal. The local oscillator (LO) signal is generated by the LO quadrature signal generator 6, and the IF and LO signals are respectively input to the IF and LO terminals of the two passive bidirectional mixers of the image suppression bidirectional mixer 3. The RF signals output by the two passive bidirectional mixers are combined by the power distribution / combining network 11 to obtain the up-converted single-sideband RF signal. After being amplified by the dual-frequency power amplifier 1, the signal is distributed to multiple phase-shifting channels 16 by the multi-channel power distribution network 15 for phase shifting, and then transmitted into space through the antenna array 17.

[0073] In receive mode, the antenna array 17 inputs the received radio frequency signal into multiple phase-shifting channels 16, which combine the signal through a multi-channel power combining network 15 and input it into a dual-frequency low-noise amplifier 2. After passing through a power distribution / combining network 11, the signal is input to the radio frequency terminals of the two passive bidirectional mixers of the image rejection bidirectional mixer 3. The local oscillator drive amplifier 8 amplifies the input local oscillator signal and outputs the down-converted single-sideband intermediate frequency signal at the intermediate frequency terminal of the mixer. The signal is then amplified by the intermediate frequency broadband variable gain amplifier 4 and output.

[0074] In this embodiment of the invention, both the dual-frequency power amplifier 1 and the dual-frequency low-noise amplifier 2 have three operating modes: a 28GHz single-frequency filter response, a 39GHz single-frequency filter response, and a 28GHz and 39GHz broadband response. Figure 5As shown, the driver stage of the dual-band power amplifier 1 includes links operating in two frequency bands. The first frequency band signal enters the first frequency band narrowband input stage amplifier 18 from the RFin1 terminal, and is connected to the first frequency band narrowband driver stage amplifier 19 via the first frequency band inter-stage matching network 23. The second frequency band signal enters the second frequency band narrowband input stage amplifier 20 from the RFin2 terminal, and is connected to the second frequency band narrowband driver stage amplifier 21 via the second frequency band inter-stage matching network 24. The driver stage amplifiers of the two frequency bands are connected to the broadband power stage amplifier 22 via the broadband inter-stage matching network 25, and the differential power signal is output from the RFout terminal.

[0075] like Figure 6 As shown, the dual-band low-noise amplifier 2 consists of a wideband low-noise input stage 26 and links connected to the wideband low-noise input stage 26 operating in two different frequency bands. The signal enters the wideband low-noise input stage 26 from the RFin terminal and is connected to two narrowband driver stages operating in different frequency bands by a wideband matching network 31. The first frequency band signal is input to the first frequency band narrowband driver stage 27 (amplifier) ​​and connected to the first frequency band narrowband output stage 28 (amplifier) ​​by the low-noise amplifier first frequency band inter-stage matching network 32. The second frequency band signal is input to the second frequency band narrowband driver stage 29 (amplifier) ​​and connected to the second frequency band narrowband output stage 30 (amplifier) ​​by the low-noise amplifier second frequency band inter-stage matching network 33.

[0076] like Figure 7 As shown, the broadband power stage amplifier 22 of the dual-frequency power amplifier 1 and the broadband low-noise input stage 26 of the dual-frequency low-noise amplifier 2 adopt a bidirectional amplifier design, which can avoid additional switches and transmission lines, and can effectively improve transmission efficiency and reduce the receiving noise figure.

[0077] The dual-frequency power amplifier 1 and dual-frequency low-noise amplifier 2 adopt a bidirectional amplifier design and use a fully shared matching network 34 for network matching. The power amplifier and low-noise amplifier tubes in the off state also serve as matching elements, avoiding additional switches and additional passive transmission lines, maximizing the efficiency of the transmit link and minimizing the noise of the receive link. Figure 7 The matching network shown is a fully bidirectional matched network. Furthermore, bidirectional amplifier matching can also be achieved using a partially bidirectional matched method, such as... Figure 8 The partially shared matching network 35 shown can be implemented using microstrip lines, CPWs, or other similar methods for its transmission lines.

[0078] In this embodiment of the invention, the intermediate frequency broadband low parasitic phase shift variable gain amplifier 4 can be adopted as follows: Figure 9The structure shown illustrates that this intermediate frequency broadband variable gain amplifier employs a current-rudder structure based on transistor parasitic effect compensation to achieve low parasitic phase shift technology. The intermediate frequency broadband variable gain amplifier is a differential circuit, comprising common differential gate transistors M4 and M5, numerically controlled common gate transistor circuits M3 and M6, a parasitic compensation circuit Ld, and transistor circuits M1 and M2 providing constant current, connected sequentially from the input to the output.

[0079] In the intermediate frequency broadband variable gain amplifier, the gates of transistors M4 and M5 are biased by Vb through resistors, while the gates of digitally controlled transistors M3 and M6 are biased by Vb through inverters and resistors. The radio frequency signal (RF)... in+ RF in- The source input is from transistors M3, M4, M5, and M6.

[0080] Differential common-gate transistors M4 and M5 and digitally controlled common-gate transistors M3 and M6 are cross-coupled. Common-gate transistors M3 and M6 are composed of a group of transistors connected in parallel. The number of transistors conducting is controlled by digital bits. When the digital bit input is high, the signal becomes low after passing through the inverter, and the transistors do not conduct. When the digital bit input is low, the signal becomes high after passing through the inverter, and the transistors conduct. The amplifier gain is proportional to the number of transistors conducting, which is used to realize the digitally controlled variable gain signal amplification function.

[0081] The parasitic compensation inductor Ld in the intermediate frequency broadband variable gain amplifier is used to compensate for the output parasitic parameters of the common gate transistors M4 and M5 and the numerically controlled common gate transistors M3 and M6.

[0082] like Figure 10 As shown, in the prior art intermediate frequency broadband variable gain amplifier, transistor circuits M1 and M2, which provide constant current, are connected to the RF input terminal. The RF signal is input through the sources of M1 and M2. Vb provides DC bias to the transistors through a resistor. The two ends of capacitor C1 are connected to the gate of M1 and the source of M2, and the two ends of capacitor C2 are connected to the gate of M2 and the source of M1. The drains of transistors M1 and M2 are connected to a parasitic compensation inductor, and the output terminal of the parasitic compensation inductor is connected to the source of a common-gate transistor and a common-gate digitally controlled transistor.

[0083] In the embodiment of this invention, the transistor circuits M1 and M2, capacitors C1 and C2 providing constant current in the intermediate frequency broadband variable gain amplifier are placed at the output terminal of the parasitic compensation inductor Ld, which also provides a suitable output impedance, facilitating the design of the output matching network, such as... Figure 11 As shown.

[0084] Embodiments of the present invention, such as Figure 12As shown, the intermediate frequency quadrature signal generator can be composed of multiple quadrature signal generator units with a high-level cascaded coupling inductor structure. The input terminal and the through terminal, the coupling terminal and the isolation terminal are connected by coupling inductors, and the input terminal and the coupling terminal, the through terminal and the isolation terminal are connected by capacitors.

[0085] The first coupler unit 36 ​​and the second coupler unit 37 form a first-stage differential structure, and the third coupler unit 38, the fourth coupler unit 39, the fifth coupler unit 40, and the sixth coupler unit 41 form a second-stage differential structure. The through end of the first coupler unit 36 ​​is connected to the input end of the third coupler unit 38, the coupling end of the first coupler unit 36 ​​is connected to the input end of the fourth coupler unit 39, the through end of the second coupler unit 37 is connected to the input end of the fifth coupler unit 40, and the coupling end of the second coupler unit 37 is connected to the input end of the sixth coupler unit 41.

[0086] The through-terminal of the third coupler unit 38 is connected to the coupling terminal of the sixth coupler unit 41, and the coupling terminal of the fourth coupler unit 39 is connected to the through-terminal of the fifth coupler unit 40, forming a set of differential output signals OUT1.

[0087] The coupling end of the third coupler unit 38 is connected to the through end of the fourth coupler unit 39, and the coupling end of the fifth coupler unit 40 is connected to the through end of the sixth coupler unit 41, forming a differential output signal OUT2 that is orthogonal to the output signal OUT1. Signals OUT1 and OUT2 provide orthogonal intermediate frequency signals to the mixer.

[0088] The coupling inductor of the intermediate frequency quadrature signal generator can be implemented using a thick metal transmission line.

[0089] In this embodiment of the invention, the intermediate frequency quadrature signal generator can be implemented using the lumped element structure based on coupled inductors as described above, or it can be implemented using branch lines, coupled lines, etc., as shown below. Figure 13 The three-coupled-line structure shown is a third-order coupled-line structure, where 42 is the third-order coupled-line, θ is the electrical length of the coupled-line, and C1, C2, and C3 are the coupling coefficients of the first-order, second-order, and third-order coupled-lines, respectively.

[0090] In this embodiment of the invention, the passive bidirectional mixer used in the image suppression passive bidirectional mixer can be... Figure 14 The structure shown is as follows: Figure 14 As shown, the passive bidirectional mixer adopts a wideband double-balanced structure, with the gates of transistors M1 and M4 connected to the local oscillator signal V. L0+ The gates of transistors M2 and M4 are connected to the local oscillator signal V. L0- The signal is generated by connecting the drains of transistors M1 and M3 together to a radio frequency signal output terminal V. RFThe drains of transistors M2 and M4 are connected together and then connected to another RF signal output terminal V. RF After the sources of transistors M1 and M2 are connected, the intermediate frequency signal terminal V... IF+ After the sources of transistors M1 and M2 are connected together, the other end V of the intermediate frequency signal is connected. IF- It has a high degree of isolation between input signals and can cancel out spurious signals generated during the mixing process.

[0091] In transmit mode, the intermediate frequency signal is input from the source of transistors M1, M2, M3 and M4, the local oscillator signal is input from the gate, and the radio frequency signal is output from the drain of the transistors.

[0092] In receive mode, the radio frequency signal is input from the drain of transistors M1, M2, M3 and M4, the local oscillator signal is input from the gate, and the intermediate frequency signal is output from the source of the transistors.

[0093] In this embodiment of the invention, the passive bidirectional mixer can also adopt a single-balanced architecture, such as... Figure 15 As shown, the stage is composed of transistors M1 and M2. The gates of transistors M1 and M2 are connected to the local oscillator signal V. L0 The source of transistors M1 and M2 is grounded through an inductor and connected to the intermediate frequency signal V. IF The drain outputs radio frequency signal V from transistors M1 and M2. RF .

[0094] In transmit mode, the intermediate frequency (IF) signal is input from the sources of transistors M1 and M2, the local oscillator (LO) signal is input from the gate, and the radio frequency (RF) signal is output from the drain. In receive mode, the RF signal is input from the drains of transistors M1 and M2, the LO signal is input from the gate, and the IF signal is output from the source.

[0095] In this embodiment of the invention, the passive bidirectional mixer can also adopt a dual-balanced architecture, such as... Figure 16 As shown, transistors M1, M2, M5, and M6 are connected at their sources, transistors M3, M4, M7, and M8 are connected at their sources, transistors M1, M2, M7, and M8 are connected at their drains, and transistors M3, M4, M5, and M6 are connected at their drains to cancel out higher harmonic signals. The drain serves as the output or input terminal of the radio frequency signal, the gate serves as the input terminal of the local oscillator signal with different phases, and the source of the transistor serves as the input or output terminal of the local oscillator signal.

[0096] In transmit mode, the intermediate frequency (IF) signal is input from the source of the transistor, local oscillator signals of different phases are input from the gate, and radio frequency (RF) signals are output from the drain of the transistor. In receive mode, the RF signal is input from the drain of the transistor, local oscillator signals of different phases are input from the gate, and the IF signal is output from the source of the transistor.

[0097] In this embodiment of the invention, the local oscillator phase switching drive amplifier 12 is used to amplify the local oscillator signal and to reverse the local oscillator phase when switching between receive and transmit states. For example... Figure 17 As shown, the local oscillator driver amplifier consists of a differential non-inverting amplifier 42 and a differential inverting amplifier 43. The sources of transistors M1, M2, M3, and M4 are grounded. The input signal is connected to the gates of transistors M1, M2, M3, and M4 respectively through DC blocking capacitors C1, C2, C3, and C4. Neutralizing capacitors C5 and C6 are connected across the gates and drains of transistors M1 and M2, and neutralizing capacitors C7 and C8 are connected across the gates and drains of transistors M3 and M4 to improve the gain and stability of the amplifier circuit. The amplified signal is output from the drain of the transistors.

[0098] In transmit mode, the local oscillator driver amplifier provides in-phase and out-of-phase amplified local oscillator signals to the two image-rejected bidirectional mixers, respectively; in receive mode, the local oscillator driver amplifier provides in-phase and out-of-phase amplified local oscillator signals to the two image-rejected bidirectional mixers, respectively. The transmit and receive modes can be switched by changing the bias voltage of the transistors.

[0099] The dual-frequency bidirectional transceiver of this invention uses a WLCSP packaging process for its chip, such as... Figure 18 As shown, solder balls are used to flip-chip solder the active side of the chip onto the PCB board, reducing the chip's package size.

[0100] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. It will be apparent to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or basic features of the present invention.

[0101] Therefore, the embodiments should be considered exemplary and non-limiting in all respects. The scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0102] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A 5G dual-band bidirectional transceiver with high image suppression, characterized in that, include: A dual-frequency power amplifier with filtering response and a dual-frequency low-noise amplifier with filtering response; The dual-frequency power amplifier and the dual-frequency low-noise amplifier are connected to the dual-frequency transceiver unit via a power distribution / combining network. The dual-frequency transceiver unit includes two transceiver modules. Along the signal transmission direction, each transceiver module includes a broadband intermediate frequency switch, a broadband intermediate frequency bidirectional amplifier, a broadband intermediate frequency quadrature signal generator, and a mirror rejection bidirectional mixer connected in sequence. The power distribution / combining network is connected to the mirror rejection bidirectional mixer. The dual-frequency power amplifier is used to amplify the radio frequency signal input by the image rejection bidirectional mixer through the power distribution / combining network and output it to the antenna for transmission when transmitting signals through the transmission link. The dual-frequency low-noise amplifier is used to amplify the radio frequency signal received by the antenna when receiving signals through the receiving link, and then output it to the radio frequency terminal of the image rejection bidirectional mixer through the power distribution / combining network. The image suppression bidirectional mixer uses the quadrature local oscillator signal provided by the quadrature local oscillator signal generation module to mix the input quadrature intermediate frequency signal or the input radio frequency signal and output a signal with suppressed image frequency. In the transmit state, it outputs an up-converted single-sideband radio frequency signal and in the receive state, it outputs a down-converted single-sideband intermediate frequency signal. The dual-frequency power amplifier and the dual-frequency low-noise amplifier can both operate in two frequency bands. The dual-frequency power amplifier and the dual-frequency low-noise amplifier achieve switching between different frequency bands and transmit / receive operations by switching the bias.

2. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The local oscillator quadrature signal generation module includes a phase-locked loop and a local oscillator quadrature signal generator connected in sequence. The output terminal of the local oscillator quadrature signal generator is connected to the local oscillator terminal of the image suppression bidirectional mixer through a local oscillator drive amplifier or a local oscillator phase switching drive amplifier. After the phase-locked loop generates a local oscillation signal, it is converted into a local oscillator quadrature signal by the local oscillator quadrature signal generator, and then input to the local oscillator terminal of the image suppression bidirectional mixer after passing through the local oscillator drive amplifier or the local oscillator phase switching drive amplifier.

3. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 2, characterized in that, The local oscillator orthogonal signal generator uses a high-order coupling coupler structure to generate orthogonal local oscillator signals.

4. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 2, characterized in that, The phase-locked loop operates at 30-37 GHz, the local oscillator quadrature signal generator operates at 2-10.6 GHz, and the local oscillator drive amplifier operates at 2-10.6 GHz.

5. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The image suppression bidirectional mixer includes two passive bidirectional mixers that operate in different frequency bands to achieve dual-band coverage of the image suppression structure. During transmission, the input quadrature intermediate frequency (IF) signal is converted into a radio frequency (RF) signal based on the input local oscillator quadrature signal. During reception, the input RF signal is converted into an IF signal based on the input local oscillator quadrature signal. The output signals of the two passive bidirectional mixers are then combined and output to obtain a signal with image frequency suppressed.

6. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 5, characterized in that, The passive bidirectional mixer adopts a dual-balanced architecture, a single-balanced architecture, or a dual-dual-balanced architecture.

7. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The dual-frequency power amplifier includes two narrowband driver stages operating in different frequency bands and a broadband output stage operating in a broadband frequency band. The two narrowband driver stages are connected in parallel at their output terminals and then connected to the input terminal of the broadband output stage through an inter-stage matching network. Each narrowband driver stage includes a narrowband input stage amplifier and a narrowband driver stage amplifier connected to the narrowband input stage amplifier through an inter-stage matching network.

8. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The dual-frequency power amplifier has three operating modes: 28GHz single-frequency filter response, 39GHz single-frequency filter response, and 28GHz and 39GHz broadband response.

9. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 7, characterized in that, The dual-frequency low-noise amplifier includes a broadband low-noise input stage operating in a wideband and two narrowband driver stages operating in different frequency bands. The inputs of the two narrowband driver stages are connected in parallel and then connected to the output of the broadband low-noise input stage through a broadband inter-stage matching network. Each narrowband driver stage includes a narrowband driver stage amplifier and a narrowband output stage amplifier connected to the narrowband driver stage amplifier through an inter-stage matching network.

10. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The dual-frequency low-noise amplifier has three operating modes: 28GHz single-frequency filter response, 39GHz single-frequency filter response, and 28GHz and 39GHz broadband response.

11. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 9, characterized in that, The broadband output stage of the dual-frequency power amplifier and the broadband low-noise input stage of the dual-frequency low-noise amplifier adopt a bidirectional amplifier design and share a matching network.

12. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The broadband intermediate frequency bidirectional amplifier is used to amplify the intermediate frequency signal according to the strength requirements of the received or transmitted signal. It employs two broadband intermediate frequency variable gain amplifiers, which are used to amplify the signal in the receiving mode and the transmitting mode of the dual-frequency bidirectional transceiver, respectively, or it can be implemented by a single broadband intermediate frequency bidirectional amplifier capable of bidirectional signal amplification.

13. The 5G dual-band bidirectional transceiver with high image suppression as described in claim 12, characterized in that, The broadband intermediate frequency variable gain amplifier adopts a current rudder structure based on transistor parasitic effect compensation to achieve low parasitic phase shift.

14. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 13, characterized in that, The broadband intermediate frequency variable gain amplifier is a differential circuit, including a differential common gate transistor and a digitally controlled common gate transistor circuit, a parasitic compensation circuit, and a transistor circuit that provides constant current, connected sequentially from the input to the output. The differential common gate transistor and the digitally controlled common gate transistor circuit are cross-coupled to realize digitally controlled variable gain signal amplification. The parasitic compensation circuit is used to compensate for the output parasitic parameters of the common gate transistor and the digitally controlled common gate transistor. The transistor circuit that provides a constant current also provides a suitable output impedance for matching.

15. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The broadband intermediate frequency switch selects the corresponding broadband intermediate frequency variable gain amplifier to amplify the signal when switching between the receive mode and the transmit mode.

16. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The broadband intermediate frequency switch operates in the 2-10.6GHz range, covering satellite communication, 4G, 5G, WiFi, and UWB frequency bands.

17. The 5G dual-band bidirectional transceiver with high image rejection as described in claim 1, characterized in that, The active side of the dual-frequency bidirectional transceiver chip is flip-chip soldered onto the PCB board using WLCSP packaging technology and solder balls.

Citation Information

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