Intelligent Power Module

Abstract

The present invention discloses an intelligent power module, comprising a substrate, a frame, an insulated gate bipolar transistor, a diode, a driving chip, a first conductive member and a second conductive member, wherein the frame comprises a base island, a control pin and a power pin, wherein the control pin and the power pin are arranged along the width direction of the substrate; the insulated gate bipolar transistor and the diode are both arranged on the substrate and spaced apart along the width direction of the substrate, the insulated gate bipolar transistor is connected to the control pin and the power pin, and the diode is connected to the power pin; the driving chip is arranged on the base island, and the driving chip is connected to the control pin; the first conductive member and the second conductive member are both located between the substrate and the frame, and the two ends of the first conductive member are respectively connected to the power pin and the insulated gate bipolar transistor, and the two ends of the second conductive member are respectively connected to the power pin and the diode. According to the intelligent power module of the present invention, the aluminum wire welding process is saved, thereby being able to improve the packaging efficiency of the intelligent power module.

Description

Technical Field

[0001] The present invention relates to the technical field of intelligent power modules, and in particular to an intelligent power module. Background Art

[0002] In the related art, in the production process of intelligent power modules, thick aluminum wire is used to bond the emitter of the IGBT chip to the positive electrode of the FRD chip and then to the power pin of the frame, and thin aluminum wire is used to bond the gate of the power chip to the control pin of the frame. The wire diameter needs to be switched twice, and the number of aluminum wires is large, which is extremely time-consuming and inefficient. In addition, there may be risks such as craters, non-sticky bonding, and failure during the welding process. In addition, the power pins of existing intelligent power modules need to be bent and welded to the substrate, and the control pins need to be bonded to the driver chip, resulting in the size of the substrate being limited between the control pins and the power pins. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one object of the present invention is to provide an intelligent power module, which improves the packaging efficiency of the intelligent power module, and the two sides of the substrate in the width direction can be extended to the edge of the plastic package shell, thereby improving the heat dissipation efficiency of the intelligent power module.

[0004] According to an embodiment of the present invention, the intelligent power module includes: a substrate; a frame, the frame is located on one side of the substrate in the thickness direction, the frame includes a base island, a control pin and a power pin, the control pin and the power pin are arranged along the width direction of the substrate; an insulated gate bipolar transistor and a diode, the insulated gate bipolar transistor and the diode are both arranged on the substrate and spaced apart along the width direction of the substrate, the insulated gate bipolar transistor is connected to the control pin and the power pin, and the diode is connected to the power pin; a driving chip, the driving chip is arranged on the base island, and the driving chip is connected to the control pin; a first conductive member and a second conductive member, the first conductive member and the second conductive member are both located between the substrate and the frame, the two ends of the first conductive member are respectively connected to the power pin and the insulated gate bipolar transistor, and the two ends of the second conductive member are respectively connected to the power pin and the diode.

[0005] According to the intelligent power module of the embodiment of the present invention, a first conductive member and a second conductive member are arranged between the substrate and the frame, and the two ends of the first conductive member are respectively connected to the power pin and the insulated gate bipolar transistor, and the two ends of the second conductive member are respectively connected to the power pin and the diode. Therefore, compared with the traditional intelligent power module, the aluminum wire welding process is saved, so that the packaging efficiency of the intelligent power module can be improved, and the two sides of the width direction of the substrate can be extended to the edge of the plastic package shell, thereby improving the heat dissipation efficiency of the intelligent power module.

[0006] According to some embodiments of the present invention, the insulated gate bipolar transistor has an emitter, and two ends of the first conductive member are respectively connected to the emitter and the power pin, wherein a cross-sectional area of ​​the first conductive member is smaller than a cross-sectional area of ​​the emitter.

[0007] According to some embodiments of the present invention, the diode has an anode, and two ends of the second conductive member are respectively connected to the anode and the power pin, wherein a cross-sectional area of ​​the second conductive member is smaller than a cross-sectional area of ​​the anode.

[0008] According to some embodiments of the present invention, the insulated gate bipolar transistor is arranged adjacent to the control pin in the width direction of the substrate; the power pin includes a first power pin, the end of the first power pin extends to the control pin in the width direction of the substrate, and the first conductive member is arranged at the end of the first power pin; wherein the control pin includes a high-voltage control pin and a low-voltage control pin, the first power pin includes a high-voltage power pin and a low-voltage power pin, the high-voltage power pin is connected to the high-voltage control pin in the width direction of the substrate, and the low-voltage power pin is spaced apart from the low-voltage control pin in the width direction of the substrate.

[0009] According to some embodiments of the present invention, the control pin includes a first control pin, the insulated gate bipolar transistor has a gate, and the intelligent power module also includes: a third conductive member, the third conductive member is located between the substrate and the frame, and the two ends of the third conductive member are respectively connected to the gate and the first control pin, wherein the cross-sectional area of ​​the third conductive member is smaller than the cross-sectional area of ​​the gate.

[0010] According to some embodiments of the present invention, a cross-sectional area of ​​the third conductive member is smaller than a cross-sectional area of ​​the first conductive member.

[0011] According to some embodiments of the present invention, the intelligent power module further includes: a fourth conductive member connected between the substrate and the power pin, and disposed adjacent to an edge of the substrate away from the control pin.

[0012] According to some embodiments of the present invention, a cross-sectional area of ​​the fourth conductive member is smaller than or equal to a cross-sectional area of ​​the first conductive member.

[0013] According to some embodiments of the present invention, the first conductive member is connected to the power pin by ultrasonic welding, solder paste welding or sintering, and / or the third conductive member is connected to the power pin by ultrasonic welding, solder paste welding or sintering, and / or the third conductive member is connected to the first control pin by ultrasonic welding, solder paste welding or sintering, and / or the fourth conductive member is connected to the power pin by ultrasonic welding, solder paste welding or sintering.

[0014] According to some embodiments of the present invention, each of the control pins includes a first pin segment and a second pin segment connected to each other, the second pin segment is located on a side of the first pin segment away from the substrate, the first pin segment is located inside the plastic package housing, and the second pin segment is located outside the plastic package housing; each of the power pins includes a third pin segment and a fourth pin segment connected to each other, the fourth pin segment is located on a side of the third pin segment away from the substrate, the third pin segment is located inside the plastic package housing, and the fourth pin segment is located outside the plastic package housing;

[0015] Wherein, in the thickness direction of the substrate, a surface of the first pin segment away from the substrate, a surface of the third pin segment away from the substrate, and a surface of the base island away from the substrate are flush.

[0016] According to some embodiments of the present invention, one end of the substrate in the width direction extends to one end of the base island adjacent to the control pin, and the other end of the substrate in the width direction extends to one end of the third pin segment adjacent to the fourth pin segment.

[0017] According to some embodiments of the present invention, there are multiple insulated gate bipolar transistors and multiple diodes, and the multiple insulated gate bipolar transistors are spaced apart in the length direction of the substrate, and two adjacent insulated gate bipolar transistors are staggered in the width direction of the substrate; the multiple diodes are spaced apart in the length direction of the substrate, and two adjacent diodes are staggered in the width direction of the substrate.

[0018] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0020] Figure 1 is a schematic diagram of a framework of an intelligent power module according to an embodiment of the present invention;

[0021] Figure 2 yes Figure 2 A top view of the frame of the intelligent smart power module shown;

[0022] Figure 3 yes Figure 1 A side view of the frame of the intelligent smart power module shown;

[0023] Figure 4 is a schematic diagram of an intelligent power module according to an embodiment of the present invention, wherein the plastic package housing is not shown;

[0024] Figure 5 yes Figure 3 A top view of the intelligent power module is shown, wherein the plastic package housing is not shown;

[0025] Figure 6 is a schematic diagram of an intelligent power module according to an embodiment of the present invention;

[0026] Figure 7 is a schematic diagram of an intelligent power module according to another angle of the embodiment of the present invention;

[0027] Figure 8 is a cross-sectional view of an intelligent power module according to an embodiment of the present invention;

[0028] Fig. 9 Schematic diagram of a substrate and a power chip of an intelligent power module according to an embodiment of the present invention.

[0029] Reference numerals:

[0030] 100: Intelligent power module;

[0031] 10: substrate; 101: functional area; 1011: first area; 1012: second area; 1013: third area; 1014: fourth area; 102: first copper layer; 103: ceramic layer; 104: second copper layer; 20: frame; 201: base island; 202: control pin; 2021: low voltage control pin; 2022: high voltage control pin; 2023: first control pin; 2024: first pin segment; 2025: second pin segment; 203: power pin; 2031: first power pin; 2032: high voltage power pin; 2033: low voltage power pin ; 2034: third pin segment; 2035: fourth pin segment; 30: insulated gate bipolar transistor; 301: emitter; 302: gate; 303: high-voltage insulated gate bipolar transistor; 304: low-voltage insulated gate bipolar transistor; 31: diode; 311: low-voltage diode; 312: high-voltage diode; 313: anode; 40: driver chip; 401: low-voltage driver chip; 403: high-voltage driver chip; 404: bootstrap diode; 501: first conductive element; 502: second conductive element; 503: third conductive element; 504: fourth conductive element; 60: plastic package shell. DETAILED DESCRIPTION

[0032] Reference below Figure 1-Figure 9 The intelligent power module 100 according to the embodiment of the present invention is described.

[0033] like Figure 1-Figure 9 As shown, the intelligent power module 100 according to the embodiment of the present invention includes a substrate 10 , a frame 20 , an insulated gate bipolar transistor 30 , a diode 31 , a driving chip 40 and a first conductive member 501 .

[0034] Specifically, the frame 20 is located in the thickness direction of the substrate 10 (eg, Figure 8 The frame 20 includes a base island 201, a control pin 202, and a power pin 203. The control pin 202 and the power pin 203 are arranged along the width direction of the substrate 10 (for example, Figure 5 The insulated gate bipolar transistor 30 and the diode 31 are both arranged on the substrate 10 and spaced apart along the width direction of the substrate 10. The insulated gate bipolar transistor 30 is connected to the control pin 202 and the power pin 203, and the diode 31 is connected to the power pin 203. The driving chip 40 is arranged on the base island 201, and the driving chip 40 is connected to the control pin 202. The first conductive member 501 and the second conductive member 502 are both located between the substrate 10 and the frame 20, and the two ends of the first conductive member 501 are respectively connected to the power pin 203 and the insulated gate bipolar transistor 30, and the two ends of the second conductive member 502 are respectively connected to the power pin 203 and the diode 31.

[0035] For example, in Figure 1-Figure 8 In the example of , the substrate 10, the base island 201, the insulated gate bipolar transistor 30, the diode 31, the driver chip 40 and the first conductive member 501 are all arranged in the plastic housing 60, and the insulated gate bipolar transistor 30 and the diode 31 constitute a power chip. The surface of the side of the substrate 10 away from the frame 20 is flush with the bottom surface of the plastic housing 60 and exposed outside the plastic housing 60. When the insulated gate bipolar transistor 30 and the diode 31 generate heat during operation, the heat can be transferred to the above surface and exchange heat with the outside to achieve heat dissipation of the intelligent power module 100. The two sides of the width direction of the plastic housing 60 are respectively the control side and the power side. The control pin 202 is located on the control side, and one end of the control pin 202 extends into the plastic housing 60 for connecting with the insulated gate bipolar transistor 30 or the driver chip 40. One end of the power pin 203 extends into the plastic housing 60 for connecting with the diode 31 or the substrate 10, and the other end of the power pin 203 extends out of the plastic housing 60 from the power side.

[0036] The base island 201 is disposed adjacent to the control side of the plastic package housing 60, and the driving chip 40 is disposed on the side of the base island 201 away from the substrate 10. For example, there are seven base islands 201, and the seven base islands 201 are arranged along the length direction of the substrate 10 (for example, Figure 5 The driver chip 40 includes a low voltage driver chip 401, three high voltage driver chips 403 and three bootstrap diodes 404, and the high voltage driver chip 403 and the bootstrap diode 404 are connected to the control pin 202 through a gold wire or a copper wire. The low voltage driver chip 401 is arranged on the outermost base island 201 among the seven base islands 201, and the low voltage driver chip 401 can be connected to the control pin 202 through a gold wire or a copper wire, and the three high voltage driver chips 403 and the three bootstrap diodes 404 are respectively arranged on the remaining six base islands 201. Of course, the control pin 202 and the low voltage driver chip 401 and the high voltage driver chip 402 can also be connected through other materials with low resistivity.

[0037] Among them, the driving chip 40, the frame 20, the first conductive member 501, the insulated gate bipolar transistor 30 and the substrate 10 are arranged in sequence along the thickness direction of the substrate 10, the number of the first conductive members 501 is the same as the number of the insulated gate bipolar transistors 30, the power pins 203 are connected to the insulated gate bipolar transistors 30 through the first conductive members 501, the number of the second conductive members 502 is the same as the number of the diodes 31, and the power pins 203 are connected to the diodes 31 through the second conductive members 502. Therefore, the first conductive member 501 can support the substrate 10 and the frame 20 while conducting electricity, so as to prevent the substrate 10 and the frame 20 from moving relative to each other, and make the structure of the intelligent power module 100 more stable.

[0038] During processing, the first conductive member 501 and the second conductive member 502 can be first connected to the power pin 203, the insulated gate bipolar transistor 30 and the diode 31 can be pre-fixed on the substrate 10 by silver paste, and the driving chip 40 can be pre-fixed on the base island 201 by silver paste; then sintering is performed to stably fix the insulated gate bipolar transistor 30 and the diode 31 on the substrate 10, and the driving chip 40 is stably fixed on the base island 201; then silver paste is applied on the insulated gate bipolar transistor 30 for connecting to the first conductive member 501, and silver paste is applied on the diode 31 for connecting to the second conductive member 502; then sintering is performed to stably connect the insulated gate bipolar transistor 30 to the first conductive member 501, and the diode 31 to the second conductive member 502; finally, injection molding is performed to obtain the intelligent power module 100. Therefore, by providing the first conductive member 501 and the second conductive member 502 , the aluminum wire welding process can be saved, wire replacement can be avoided, and craters, non-stick bonding, failure and the like can be avoided, thereby improving the packaging efficiency of the intelligent power module 100 .

[0039] According to the intelligent power module 100 of the embodiment of the present invention, the first conductive member 501 and the second conductive member 502 are arranged between the substrate 10 and the frame 20, the two ends of the first conductive member 501 are respectively connected to the power pin 203 and the insulated gate bipolar transistor 30, and the two ends of the second conductive member 502 are respectively connected to the power pin 203 and the diode 31. Therefore, compared with the traditional intelligent power module, the aluminum wire welding process is saved, so that the packaging efficiency of the intelligent power module 100 can be improved.

[0040] According to some embodiments of the present invention, Figure 4 and Fig. 9 As shown, the insulated gate bipolar transistor 30 has an emitter 301, and two ends of the first conductive member 501 are respectively connected to the emitter 301 and the power pin 203. The cross-sectional area of ​​the first conductive member 501 is smaller than the cross-sectional area of ​​the emitter 301. In this way, while ensuring that the first conductive member 501 can be connected to the emitter 301, it is prevented that the first conductive member 501 is connected to other positions of the insulated gate bipolar transistor 30 through the silver paste, thereby preventing a short circuit.

[0041] Alternatively, the diode 31 has an anode 313, and two ends of the second conductive member 502 are respectively connected to the anode 313 and the power pin 203, wherein the cross-sectional area of ​​the second conductive member 502 is smaller than the cross-sectional area of ​​the anode 313. With such a configuration, while ensuring that the second conductive member 502 can be connected to the anode 313, the second conductive member 502 is prevented from being connected to other positions of the diode 31 through the silver paste, thereby preventing a short circuit from occurring.

[0042] Optionally, the diode 31 may be a fast recovery diode, but is not limited thereto.

[0043] Furthermore, the IGBT 30 is disposed adjacent to the control pin 202 in the width direction of the substrate 10 , which can shorten the distance between the driving chip 40 and the IGBT 30 , and facilitate the connection between the control pin 202 and the IGBT 30 .

[0044] The power pin 203 includes a first power pin 2031, and the end of the first power pin 2031 extends to the control pin 202 in the width direction of the substrate 10. The first conductive member 501 is provided at the end of the first power pin 2031. It should be noted that the end of the first power pin 2031 refers to the vicinity of one end of the first power pin 2031 adjacent to the control pin 202.

[0045] Reference Figure 1-Figure 5 There are eight power pins 203, and the eight power pins 203 are spaced apart along the width direction of the substrate 10. Six of the eight power pins 203 are first power pins 2031, and each first power pin 2031 extends along the width direction of the substrate 10. One end of each first power pin 2031 extends into the plastic package housing 60 and extends to the vicinity of the control pin 202. The first conductive member 501 is arranged on a side of the substrate 10 adjacent to the above-mentioned one end of the first power pin 2031, which facilitates the first conductive member 501 to be connected to the insulated gate bipolar transistor 30. The other end of each first power pin 2031 extends out of the plastic package housing 60 from the power side of the plastic package housing 60. As a result, the length of the first power pin 2031 is increased, thereby improving the structural strength of the frame 20.

[0046] Further, the control pin 202 includes a high voltage control pin 2022 and a low voltage control pin 2021, and the first power pin 2031 includes a high voltage power pin 2032 and a low voltage power pin 2033. The high voltage power pin 2032 is connected to the high voltage control pin 2022 in the width direction of the substrate 10, and the low voltage power pin 2033 is spaced apart from the low voltage control pin 2021 in the width direction of the substrate 10. For example, Figure 1-Figure 8In the example, the six first power pins 2031 include three low-voltage power pins 2033 and three high-voltage power pins 2032, each of the low-voltage power pins 2033 is provided with a first conductive member 501, and the low-voltage power pin 2033 is connected to the emitter 301 of the low-voltage insulated gate bipolar transistor 304 through the first conductive member 501. The three high-voltage power pins 2032 are respectively connected to the three high-voltage control pins 2022, each of the high-voltage power pins 2032 is provided with a first conductive member 501 and a fourth conductive member 504, the first conductive member 501 is approximately located at the connection between the high-voltage power pin 2032 and the high-voltage control pin 2022, and the fourth conductive member 504 is adjacent to the edge of the substrate 10. As a result, the high-voltage power pin 2032 and the high-voltage control pin 2022 can share a conductive member, saving the number of conductive members, further improving the structural strength of the frame 20, and reducing the weight of the intelligent power module 100.

[0047] According to some embodiments of the present invention, the control pin 202 includes a first control pin 2023, the insulated gate bipolar transistor 30 has a gate 302, and the intelligent power module 100 further includes a third conductive member 503, the third conductive member 503 is located between the substrate 10 and the frame 20, and the two ends of the third conductive member 503 are respectively connected to the gate 302 and the first control pin 2023. Figure 1-Figure 5 As shown, there are six first control pins 2023 and six third conductive members 503, and the third conductive member 503 is located at the end of the first control pin 2023, that is, the third conductive member 503 is located near one end of the first control pin 2023 adjacent to the power pin 203, and two of the six first control pins 2023 are located at one end in the length direction of the substrate 10, and the above two first control pins 2023 are spaced apart along the width direction of the substrate 10, and the free ends of the above two first control pins 2023 extend from one side in the length direction of the substrate 10, and the remaining four first control pins 2023 are spaced apart along the length direction of the substrate 10, and the free ends of the above four first control pins 2023 extend from one side in the width direction of the substrate 10.

[0048] Therefore, through the third conductive member 503, the electrical connection between the first control pin 2023 and the insulated gate bipolar transistor 30 can be achieved, saving the aluminum wire welding process, thereby avoiding the replacement of the wire, and further avoiding the occurrence of craters, bonding non-stick stations, failures and the like, thereby improving the packaging efficiency of the intelligent power module 100. At the same time, the third conductive member 503 can further support the substrate 10 and the frame 20, avoiding relative movement of the substrate 10 and the frame 20, and making the structure of the intelligent power module 100 more stable.

[0049] It should be noted that the three low-voltage power pins 2033 are also the first control pins 2023 .

[0050] Among them, Figure 1-Figure 5 As shown, the cross-sectional area of ​​the third conductive member 503 is smaller than the cross-sectional area of ​​the gate 302. This arrangement ensures that the third conductive member 503 can be connected to the gate 302 while preventing the third conductive member 503 from being connected to other positions of the insulated gate bipolar transistor 30 through the silver paste, thereby preventing a short circuit.

[0051] According to some embodiments of the present invention, the cross-sectional area of ​​the third conductive member 503 is smaller than the cross-sectional area of ​​the first conductive member 501. Since the size of the gate 302 on the insulated gate bipolar transistor 30 is smaller than the size of the emitter 301, by making the cross-sectional area of ​​the third conductive member 503 smaller than the cross-sectional area of ​​the first conductive member 501, the size of the third conductive member 503 can be adapted to the size of the gate 302, the size of the first conductive member 501 can be adapted to the size of the emitter 301, and the distance between the emitter 301 and the gate 302 is small, and the cross-sectional area of ​​the third conductive member 503 is smaller, which can avoid the third conductive member 503 from being connected to the emitter 301.

[0052] According to some embodiments of the present invention, referring to Figure 1-Figure 5 The intelligent power module 100 further includes a fourth conductive member 504, which is connected between the substrate 10 and the power pin 203. For example, there are four fourth conductive members 504, which are respectively arranged on one side of the substrate 10 adjacent to the four power pins 203, and the substrate 10 and the power pin 203 can be electrically connected through the fourth conductive member 504. Among them, the three fourth conductive members 504 are respectively arranged on the three first power pins 2031, and the above-mentioned three fourth conductive members 504 are arranged adjacent to the edge of the side of the substrate 10 away from the control pin 202, that is, the above-mentioned three fourth conductive members 504 are arranged adjacent to the power side of the plastic package shell 60. At this time, the fourth conductive member 504 can cooperate with the first conductive member 501 to support on both sides of the length direction of the power pin 203. The power pin 203 does not need to be bent to be connected to the substrate 10, so that the size of the substrate 10 is not limited to between the control pin 202 and the power pin 203. The two sides of the width direction of the substrate 10 in the present application can be extended to the edge of the plastic package shell 60, which increases the size of the substrate 10, thereby improving the heat dissipation efficiency of the intelligent power module 100.

[0053] Further, the cross-sectional area of ​​the fourth conductive member 504 is less than or equal to the cross-sectional area of ​​the first conductive member 501. When the cross-sectional area of ​​the fourth conductive member 504 is equal to the cross-sectional area of ​​the first conductive member 501, the fourth conductive member 504 and the first conductive member 501 have the same structure and can be interchanged, thereby reducing the number of component types. When the cross-sectional area of ​​the fourth conductive member 504 is less than the cross-sectional area of ​​the first conductive member 501, the size of the fourth conductive member 504 can be reduced, thereby reducing the weight of the frame 20, while ensuring that the fourth conductive member 504 can be connected to the substrate 10 and the power pin 203.

[0054] In some optional embodiments, the first conductive member 501 is connected to the power pin 203 by ultrasonic welding, solder paste welding or sintering, and / or the second conductive member 502 is connected to the power pin 203 by ultrasonic welding, solder paste welding or sintering, and / or the fourth conductive member 504 is connected to the power pin 203 by ultrasonic welding, solder paste welding or sintering. Among them, at least two of the first conductive member 501, the second conductive member 502 and the fourth conductive member 504 are connected to the power pin 203 in the same manner, and can adopt one of the ultrasonic welding, solder paste welding and sintering methods; or, the first conductive member 501, the second conductive member 502 and the fourth conductive member 504 are connected to the power pin 203 in different manners, and can adopt the ultrasonic welding, solder paste welding and sintering methods respectively. Therefore, the first conductive member 501, the second conductive member 502 and the fourth conductive member 504 are connected to the power pin 203 in the same simple manner, which is convenient for operation, and can further improve the packaging efficiency of the intelligent power module 100.

[0055] Similarly, the third conductive member 503 is connected to the first control pin 2023 by ultrasonic welding, solder paste welding or sintering. In this way, the third conductive member 503 is connected to the first control pin 2023 in the same simple manner, which is easy to operate and can further improve the packaging efficiency of the intelligent power module 100.

[0056] According to some embodiments of the present invention, referring to Figure 4 and Figure 6Each control pin 202 includes a first pin segment 2024 and a second pin segment 2025 connected to each other, the second pin segment 2025 is perpendicular to the first pin segment 2024 and is located on a side of the first pin segment 2024 away from the substrate 10, the first pin segment 2024 is located inside the plastic package housing 60, and the second pin segment 2025 is located outside the plastic package housing 60. Similarly, each power pin 203 includes a third pin segment 2034 and a fourth pin segment 2035 connected to each other, the fourth pin segment 2035 is perpendicular to the third pin segment 2034 and is located on a side of the third pin segment 2034 away from the substrate 10, the third pin segment 2034 is located inside the plastic package housing 60, and the fourth pin segment 2035 is located outside the plastic package housing 60.

[0057] In the thickness direction of the substrate 10 , a surface of the first lead segment 2024 away from the substrate 10 , a surface of the third lead segment 2034 away from the substrate 10 , and a surface of the base island 201 away from the substrate 10 are flush.

[0058] One end of the substrate 10 in the width direction extends to one end of the base island 201 adjacent to the control pin 202, and the other end of the substrate 10 in the width direction extends to one end of the third pin segment 2034 adjacent to the fourth pin segment 2035. Thus, the size of the substrate 10 is not limited to between the control pin 202 and the power pin 203, and both sides of the substrate 10 in the width direction of the present application can be extended to the edge of the plastic package housing 60, thereby increasing the size of the substrate 10 and improving the heat dissipation efficiency of the intelligent power module 100.

[0059] According to some embodiments of the present invention, both the insulated gate bipolar transistor 30 and the diode 31 are multiple. In the description of the present invention, the meaning of "multiple" is two or more. The multiple insulated gate bipolar transistors 30 are spaced apart in the length direction of the substrate 10, and the multiple diodes 31 are spaced apart in the length direction of the substrate 10. For example, Figure 1-Figure 8 In the example, the circuit layer of the substrate 10 is divided into four functional areas 101, and the four functional areas 101101 are spaced apart along the length direction of the substrate 10. The four functional areas 101 are respectively a first area 1011, a second area 1012, a third area 1013 and a fourth area 1014 along the length direction of the substrate 10. A low-voltage insulated gate bipolar transistor 304 and a low-voltage diode 311 are provided in each of the first area 1011, the second area 1012 and the third area 1013. Three high-voltage insulated gate bipolar transistors 303 and three high-voltage diodes 312 are provided in the fourth area 1014. The three high-voltage insulated gate bipolar transistors 303 are spaced apart along the length direction of the substrate 10, and the three high-voltage diodes 312 are spaced apart along the length direction of the substrate 10.

[0060] The two adjacent insulated gate bipolar transistors 30 are staggered in the width direction of the substrate 10. Figure 5 , two adjacent low-voltage insulated gate bipolar transistors 304 are staggered in the width direction of the substrate 10 (i.e., the low-voltage insulated gate bipolar transistors 304 in the first region 1011 and the second region 1012), two adjacent high-voltage insulated gate bipolar transistors 303 are staggered in the width direction of the substrate 10 (i.e., the high-voltage insulated gate bipolar transistors 303 in the fourth region 1014), and the high-voltage power pins 2032 of the adjacent low-voltage insulated gate bipolar transistors 304 are staggered in the width direction of the substrate 10 (i.e., the low-voltage insulated gate bipolar transistors 304 in the third region 1013 and the high-voltage insulated gate bipolar transistors 303 in the fourth region 1014). Thus, the multiple insulated gate bipolar transistors 30 can be evenly distributed on the substrate 10, so that the heat generated by the multiple insulated gate bipolar transistors 30 can also be evenly distributed on the substrate 10, thereby further improving the heat dissipation efficiency of the intelligent power module 100.

[0061] Two adjacent diodes 31 are staggered in the width direction of the substrate 10. Figure 5 , two adjacent low-voltage diodes 311 are staggered in the width direction of the substrate 10 (i.e., the low-voltage diodes 311 in the first region 1011 and the second region 1012), two adjacent high-voltage diodes 312 are staggered in the width direction of the substrate 10 (i.e., the high-voltage diodes 312 in the fourth region 1014), and adjacent low-voltage diodes 311 are staggered in the width direction of the substrate 10 (i.e., the low-voltage diodes 311 in the third region 1013 and the high-voltage diodes 312 in the fourth region 1014). Thus, the multiple diodes 31 can be evenly distributed on the substrate 10, so that the heat generated by the multiple diodes 31 can also be evenly distributed on the substrate 10, thereby further improving the heat dissipation efficiency of the intelligent power module 100.

[0062] Optionally, the substrate 10 can be a ceramic copper-clad board, which includes a first copper layer 102 (circuit layer), a ceramic layer 103 (insulating layer) and a second copper layer 104 arranged along the thickness direction. The insulated gate bipolar transistor 30 and the diode 31 are connected to the first copper layer 102, and the surface of the second copper layer 104 on one side away from the insulated gate bipolar transistor 30 and the diode 31 is flush with the bottom surface of the plastic package shell 60 and exposed outside the plastic package shell 60. When the insulated gate bipolar transistor 30 and the diode 31 generate heat during operation, the heat can be transferred to the second copper layer 104 through the first copper layer 102 and the ceramic layer 103, and the second copper layer 104 performs heat exchange with the outside to achieve heat dissipation of the intelligent power module 100.

[0063] Other structures and operations of the intelligent power module 100 according to the embodiment of the present invention are known to those skilled in the art and will not be described in detail here.

[0064] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0065] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

Claims

1. An intelligent power module, It is characterized in that include: substrate; A frame, the frame is located on one side of the substrate in the thickness direction, the frame includes a base island, a control pin and a power pin, and the control pin and the power pin are arranged along the width direction of the substrate; an insulated gate bipolar transistor and a diode, wherein the insulated gate bipolar transistor and the diode are both arranged on the substrate and spaced apart along the width direction of the substrate, the insulated gate bipolar transistor is connected to the control pin and the power pin, and the diode is connected to the power pin; A driving chip, wherein the driving chip is disposed on the base island and connected to the control pin; A first conductive member and a second conductive member, wherein the first conductive member and the second conductive member are both located between the substrate and the frame in the thickness direction of the substrate, two ends of the first conductive member are directly connected to the power pin and the insulated gate bipolar transistor respectively, and two ends of the second conductive member are connected to the power pin and the diode respectively.

2. The intelligent power module according to claim 1, It is characterized in that The insulated gate bipolar transistor has an emitter, and two ends of the first conductive member are respectively connected to the emitter and the power pin, wherein the cross-sectional area of ​​the first conductive member is smaller than the cross-sectional area of ​​the emitter.

3. The intelligent power module according to claim 2, It is characterized in that The diode has an anode, and two ends of the second conductive member are respectively connected to the anode and the power pin, wherein the cross-sectional area of ​​the second conductive member is smaller than the cross-sectional area of ​​the anode.

4. The intelligent power module according to claim 3, It is characterized in that The insulated gate bipolar transistor is disposed adjacent to the control pin in the width direction of the substrate; The power pin comprises a first power pin, an end of the first power pin extends to the control pin in the width direction of the substrate, and the first conductive member is provided at the end of the first power pin; Among them, the control pin includes a high-voltage control pin and a low-voltage control pin, the first power pin includes a high-voltage power pin and a low-voltage power pin, the high-voltage power pin is connected to the high-voltage control pin in the width direction of the substrate, and the low-voltage power pin is separated from the low-voltage control pin in the width direction of the substrate.

5. The intelligent power module according to claim 2, It is characterized in that The control pin includes a first control pin, and the insulated gate bipolar transistor has a gate The intelligent power module also includes: a third conductive member, the third conductive member is located between the substrate and the frame, and two ends of the third conductive member are respectively connected to the gate and the first control pin, Wherein, the cross-sectional area of ​​the third conductive member is smaller than the cross-sectional area of ​​the gate.

6. The intelligent power module according to claim 5, It is characterized in that A cross-sectional area of ​​the third conductive member is smaller than a cross-sectional area of ​​the first conductive member.

7. The intelligent power module according to claim 5, It is characterized in that Also includes: A fourth conductive member is connected between the substrate and the power pin, and is disposed adjacent to an edge of the substrate on a side away from the control pin.

8. The intelligent power module according to claim 7, It is characterized in that A cross-sectional area of ​​the fourth conductive member is smaller than or equal to a cross-sectional area of ​​the first conductive member.

9. The intelligent power module according to claim 7, It is characterized in that The first conductive member is connected to the power pin by ultrasonic welding, solder paste welding or sintering, and / or The second conductive member is connected to the power pin by ultrasonic welding, solder paste welding or sintering, and / or The third conductive element is connected to the first control pin by ultrasonic welding, solder paste welding or sintering, and / or The fourth conductive member is connected to the power pin by ultrasonic welding, solder paste welding or sintering.

10. The intelligent power module according to claim 1, It is characterized in that Each of the control pins comprises a first pin segment and a second pin segment connected to each other, the second pin segment is located at a side of the first pin segment away from the substrate, the first pin segment is located inside the plastic package housing, and the second pin segment is located outside the plastic package housing; each of the power pins comprises a third pin segment and a fourth pin segment connected to each other, the fourth pin segment is located at a side of the third pin segment away from the substrate, the third pin segment is located inside the plastic package housing, and the fourth pin segment is located outside the plastic package housing; Wherein, in the thickness direction of the substrate, a surface of the first pin segment away from the substrate, a surface of the third pin segment away from the substrate, and a surface of the base island away from the substrate are flush.

11. The intelligent power module according to claim 10, It is characterized in that One end of the substrate in the width direction extends to one end of the base island adjacent to the control pin, and the other end of the substrate in the width direction extends to one end of the third pin segment adjacent to the fourth pin segment.

12. The intelligent power module according to any one of claims 1 to 11, It is characterized in that There are a plurality of the insulated gate bipolar transistors and the diodes, the plurality of the insulated gate bipolar transistors are spaced apart in the length direction of the substrate, and two adjacent insulated gate bipolar transistors are staggered in the width direction of the substrate; The plurality of diodes are spaced apart in the length direction of the substrate, and two adjacent diodes are staggered in the width direction of the substrate.

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