A data-driven method and system for analyzing vacuum piping in a formation cabinet

Abstract

This invention discloses a data-driven method and system for analyzing vacuum pipelines in a formation cabinet. The method includes: forming at least one target cell based on preset formation rules; subjecting the formed target cell to high-temperature aging and determining the aging K-value of the formed target cell; determining whether the aging K-value of the formed target cell is greater than a failure threshold; if it is greater than the failure threshold, filtering out at least one abnormal channel corresponding to the aging K-value greater than the failure threshold based on correlation, and determining whether the number of channels in a certain formation cabinet to which the at least one abnormal channel belongs is greater than a first preset threshold; if it is greater than the first preset threshold, determining that the main pipeline of the certain formation cabinet is blocked. This method can improve the efficiency of troubleshooting blockages in the formation vacuum pipeline and effectively avoid the product failure risk caused by this process anomaly.

Description

Technical Field

[0001] This invention belongs to the field of vacuum pipeline analysis technology for formation cabinets, and particularly relates to a data-based method and system for analyzing vacuum pipelines in formation cabinets. Background Technology

[0002] Currently, the industry generally uses the following two methods to troubleshoot blockages in chemical vapor deposition (CVD) vacuum pipelines: Visual inspection: This method is time-consuming, lacks specificity, and has low accuracy. In addition, as vacuum pipelines age, the clarity deteriorates, making the visual inspection method even less efficient; Vacuum blockage detection: This method is even more time-consuming and requires vacuum level testing of each branch pipe individually.

[0003] Therefore, there is an urgent need for a data-driven method and system for analyzing vacuum pipelines in the formation cabinet to improve the efficiency of troubleshooting blockages in the formation vacuum pipelines and to effectively avoid product failure risks caused by process anomalies. Summary of the Invention

[0004] This invention provides a data-driven method and system for analyzing vacuum pipelines in formation cabinets, which addresses the technical problem of blockages in formation vacuum pipelines being difficult to troubleshoot and affecting production efficiency.

[0005] In a first aspect, the present invention provides a data-driven method for analyzing vacuum channels in a formation cabinet, comprising: forming at least one target cell based on a preset formation rule; subjecting the formed target cell to high-temperature aging and determining the aging K value of the formed target cell, wherein the expression for calculating the aging K value is: aging K value = (OCV1 - OCV2) / resting time, where OCV1 is the first open-circuit voltage of the formed target cell, and OCV2 is the second open-circuit voltage of the target cell after resting in an environment at a temperature of 45±2℃ for 72±2h; and associating the aging K value of the at least one target cell with the channels in the formation cabinet. The process involves obtaining a one-to-one correspondence between the at least one target cell and each channel in the formation cabinet; determining whether the aging K value of the at least one target cell after aging is greater than the failure threshold, wherein the failure threshold is obtained through the data distribution of the aging K value and the disassembly analysis of the fully charged interface of the target cell; if the aging K value of the at least one target cell after aging is greater than the failure threshold, then at least one abnormal channel corresponding to the aging K value greater than the failure threshold is selected according to the correlation, and it is determined whether the number of channels in a certain formation cabinet to which the at least one abnormal channel belongs is greater than a first preset threshold; if it is greater than the first preset threshold, then the main pipe of the certain formation cabinet is determined to be blocked.

[0006] Furthermore, the formation of at least one target cell based on a preset formation rule includes:

[0007] The at least one target battery cell is placed in an environment where the vacuum level is less than a second preset threshold for a first preset time.

[0008] After a first preset time period, the at least one target cell is subjected to a first constant current charge for a second preset time period in an environment where the vacuum level is less than a second preset threshold. During the first constant current charge, the charge and discharge current is 0.1c and the upper limit voltage is 3350mV.

[0009] After the first constant current charging lasting for a second preset duration, the at least one target cell is placed under vacuum conditions less than a second preset threshold for a third preset duration.

[0010] After a third preset time period, the at least one target cell is subjected to a second constant current charge for a fourth preset time period in an environment where the vacuum level is less than the second preset threshold. During the second constant current charge, the charging and discharging current is 0.25c and the upper limit voltage is 3350mV.

[0011] After a second constant current charge lasting for a fourth preset duration, the at least one target cell is placed under normal pressure for a fifth preset duration.

[0012] Furthermore, the first preset duration, the second preset duration, the third preset duration, the fourth preset duration, and the fifth preset duration are set to 1.2 min, 10 min, 0.5 min, 70 min, and 20 min, respectively.

[0013] Furthermore, the step of subjecting at least one target cell after formation to high-temperature aging and determining the aging K value of at least one target cell after aging includes:

[0014] Measure the first open-circuit voltage OCV1 of at least one target cell after formation;

[0015] The measured target cell is placed in a high-temperature chamber for 70-74 hours, and the required temperature in the high-temperature chamber is 43-47°C.

[0016] After the settling period is completed, the second open-circuit voltage OCV2 of the at least one target cell is measured;

[0017] The aging K value of the at least one target cell is calculated based on the first open-circuit voltage OCV1, the second open-circuit voltage OCV2, and the resting time.

[0018] Furthermore, before determining whether the aging K value of at least one target cell after aging is greater than the failure critical point, the method further includes:

[0019] The failure threshold is defined, and the specific definition process is as follows:

[0020] The channel-shaped black stripes at the fully charged negative electrode interface of the target battery cell are identified as discrete points.

[0021] The aging K value of the target cell when discrete points exist is defined as the failure critical point.

[0022] Furthermore, after determining whether the aging K value of at least one target cell after aging is greater than the failure critical point, the method further includes:

[0023] If the aging K value of at least one target cell after aging is not greater than the failure critical point, then the at least one target cell is determined to be a normal cell.

[0024] Furthermore, after determining whether the number of channels in a certain formation cabinet belonging to the at least one abnormal channel is greater than a first preset threshold, the method further includes:

[0025] If the value is not greater than the first preset threshold, then the branch pipe in a certain formation cabinet is determined to be blocked.

[0026] Secondly, the present invention provides a data-driven vacuum pipeline analysis system for a formation cabinet, comprising: a formation module configured to perform formation on at least one target cell based on a preset formation rule; a first determination module configured to perform high-temperature aging on the at least one target cell after formation and determine the aging K value of the at least one target cell after aging, wherein the expression for calculating the aging K value is: aging K value = (OCV1 - OCV2) / resting time, where OCV1 is the first open-circuit voltage of the target cell after formation, and OCV2 is the second open-circuit voltage of the target cell after resting in an environment at a temperature of 45±2℃ for 72±2h; and an association module configured to associate the aging K value of the at least one target cell with the channel in the formation cabinet, thereby obtaining... The system establishes a one-to-one correspondence between the at least one target cell and each channel in the formation cabinet; a first judgment module is configured to determine whether the aging K value of the at least one target cell after aging is greater than the failure threshold, wherein the failure threshold is obtained through the data distribution of the aging K value and the disassembly analysis of the fully charged interface of the target cell; a second judgment module is configured to, if the aging K value of the at least one target cell after aging is greater than the failure threshold, filter out at least one abnormal channel corresponding to the aging K value greater than the failure threshold according to the correlation, and determine whether the number of channels in a certain formation cabinet to which the at least one abnormal channel belongs is greater than a first preset threshold; a second determination module is configured to, if greater than the first preset threshold, determine that the main pipe of a certain formation cabinet is blocked.

[0027] Thirdly, an electronic device is provided, comprising: at least one processor, and a memory communicatively connected to the at least one processor, wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the steps of the data-based formation cabinet vacuum pipeline analysis method of any embodiment of the present invention.

[0028] Fourthly, the present invention also provides a computer-readable storage medium having a computer program stored thereon, wherein when the program instructions are executed by a processor, the processor performs the steps of the data-based formation cabinet vacuum pipeline analysis method according to any embodiment of the present invention.

[0029] The data-driven vacuum pipeline analysis method and system for the formation cabinet proposed in this application adopts online data monitoring. It can correlate abnormal data with each point in the formation cabinet, and then determine whether there is a blockage in the branch pipe corresponding to that point based on the cumulative amount of abnormal data. This improves the efficiency of troubleshooting blockages in the formation vacuum pipeline and effectively avoids the risk of product failure caused by the process abnormality. Attached Figure Description

[0030] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 A flowchart of a data-driven vacuum piping analysis method for a formation cabinet is provided as an embodiment of the present invention;

[0032] Figure 2 A structural block diagram of a data-driven vacuum pipeline analysis system for a formation cabinet is provided in one embodiment of the present invention.

[0033] Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] Please see Figure 1 The diagram shows a flowchart of a data-driven vacuum piping analysis method for a formation cabinet according to this application.

[0036] like Figure 1 As shown, the data-driven vacuum piping analysis method for the formation cabinet specifically includes the following steps:

[0037] Step S101: Form at least one target cell based on a preset formation rule.

[0038] In practical applications, at least one target battery cell is placed in an environment with a vacuum level less than a second preset threshold for a first preset time. After the first preset time, the at least one target battery cell is subjected to a first constant current charge for a second preset time in the same environment, wherein the charge / discharge current is 0.1c and the upper limit voltage is 3350mV. After the first constant current charge for the second preset time, the at least one target battery cell is placed in the same environment with a vacuum level less than the second preset threshold for a third preset time. After the third preset time, the at least one target battery cell is subjected to a second constant current charge for a fourth preset time in the same environment, wherein the charge / discharge current is 0.25c and the upper limit voltage is 3350mV. After the second constant current charge for the fourth preset time, the at least one target battery cell is placed in an environment under normal pressure for a fifth preset time, thereby completing the formation of at least one target battery cell.

[0039] It should be noted that the first, second, third, fourth, and fifth preset durations are set to 1.2 min, 10 min, 0.5 min, 70 min, and 20 min, respectively. The second preset threshold can be set to -95 kPa.

[0040] Step S102: Perform high-temperature aging on at least one target cell after formation, and determine the aging K value of at least one target cell after aging.

[0041] In this step, the first open-circuit voltage OCV1 of at least one target cell after formation is measured; the measured target cell is placed in a high-temperature chamber for 70-74 hours, with the required temperature in the high-temperature chamber being 43℃-47℃; after the settling is completed, the second open-circuit voltage OCV2 of at least one target cell is measured; the aging K value of at least one target cell is calculated based on the first open-circuit voltage OCV1, the second open-circuit voltage OCV2, and the settling time.

[0042] For example, the expression for calculating the aging K value is:

[0043] Aging K-value = (OCV1 - OCV2) / settling time

[0044] In the formula, OCV1 is the first open-circuit voltage of the target cell after formation, and OCV2 is the second open-circuit voltage of the target cell after being left to stand for 72±2 hours in an environment with a temperature of 45±2℃.

[0045] Step S103: Associate the aging K value of the at least one target cell with the channel in the formation cabinet to obtain a one-to-one correspondence between the at least one target cell and each channel in the formation cabinet.

[0046] Step S104: Determine whether the aging K value of at least one target cell after aging is greater than the failure threshold, wherein the failure threshold is obtained by analyzing the data distribution of the aging K value and the fully charged interface of the target cell.

[0047] In this step, a failure threshold is first defined, and then it is determined whether the aging K value of at least one target cell after aging is greater than the failure threshold. Specifically, the definition process is as follows: channel-shaped black streaks on the fully charged negative electrode interface of the target cell are identified as discrete points; the aging K value of the target cell when discrete points exist is defined as the failure threshold.

[0048] For example, the battery cells with calculated aging K values ​​are disassembled and analyzed sequentially from highest to lowest. If the aging K value is K1, batteries with K1 or higher will have channel-like black streaks on the fully charged negative electrode interface, which are then identified as discrete points. Batteries with aging K values ​​less than K1 will have no abnormalities on the interface. Therefore, K1 is determined to be the critical standard value. First, the aging K value of each battery cell is calculated, and then the battery cells with different K values ​​are disassembled. If a battery cell with a K value greater than or equal to a certain value is found to have a problem, it can be determined that all battery cells with this type of K value are problematic.

[0049] It should be noted that if the aging K value of at least one target cell after aging is not greater than the failure critical point, then at least one target cell is determined to be a normal cell.

[0050] Step S105: If the aging K value of at least one target cell after aging is greater than the failure threshold, then at least one abnormal channel corresponding to the aging K value greater than the failure threshold is selected according to the correlation relationship, and it is determined whether the number of channels of a certain formation cabinet to which the at least one abnormal channel belongs is greater than the first preset threshold.

[0051] In practical applications, if the value is not greater than the first preset threshold, then a branch pipe in a certain formation cabinet is determined to be blocked.

[0052] It should be noted that the first preset threshold can be set to 3.

[0053] Step S106: If the value is greater than the first preset threshold, then the main pipe of a certain formation cabinet is determined to be blocked.

[0054] In summary, the method of this application adopts data-driven online monitoring, which can correlate abnormal data with each formation cabinet point one by one, and then determine whether there is blockage in the branch pipe corresponding to the cabinet point based on the cumulative abnormal data volume, thereby improving the efficiency of troubleshooting blockage in the formation vacuum pipeline and timely and effectively avoiding the product failure risk caused by the process abnormality.

[0055] Please see Figure 2 The diagram shows a structural block diagram of a data-based formation cabinet vacuum pipeline analysis system according to this application.

[0056] like Figure 2 As shown, the formation cabinet vacuum pipeline analysis system 200 includes a formation module 210, a first determination module 220, an association module 230, a first judgment module 240, a second judgment module 250, and a second determination module 260.

[0057] The formation module 210 is configured to form at least one target cell based on a preset formation rule; the first determination module 220 is configured to perform high-temperature aging on the at least one target cell after formation and determine the aging K value of the at least one target cell after aging, wherein the expression for calculating the aging K value is: aging K value = (OCV1 - OCV2) / resting time, where OCV1 is the first open-circuit voltage of the target cell after formation, and OCV2 is the second open-circuit voltage of the target cell after resting in an environment at a temperature of 45±2℃ for 72±2h; the association module 230 is configured to associate the aging K value of the at least one target cell with the channel in the formation cabinet to obtain the relationship between the at least one target cell and the formation cabinet. The system establishes a one-to-one correspondence between each channel; a first judgment module 240 is configured to determine whether the aging K value of at least one target cell after aging is greater than the failure threshold, wherein the failure threshold is obtained through the data distribution of the aging K value and the disassembly analysis of the fully charged interface of the target cell; a second judgment module 250 is configured to, if the aging K value of at least one target cell after aging is greater than the failure threshold, filter out at least one abnormal channel corresponding to the aging K value greater than the failure threshold according to the correlation, and determine whether the number of channels in a certain formation cabinet to which the at least one abnormal channel belongs is greater than a first preset threshold; a second determination module 260 is configured to, if greater than the first preset threshold, determine that the main pipe of a certain formation cabinet is blocked.

[0058] It should be understood that Figure 2 The modules and references described in the document Figure 1 The steps described in the text correspond to those in the method described above. Therefore, the operations, features, and corresponding technical effects described above also apply to the method described in the text. Figure 2 The various modules in the document will not be described in detail here.

[0059] In other embodiments, the present invention also provides a computer-readable storage medium having a computer program stored thereon, wherein when the program instructions are executed by a processor, the processor performs the data-based formation cabinet vacuum pipeline analysis method in any of the above method embodiments.

[0060] In one embodiment, the computer-readable storage medium of the present invention stores computer-executable instructions, which are configured as follows:

[0061] At least one target cell is formed based on a preset formation rule;

[0062] At least one target cell after formation is subjected to high-temperature aging, and the aging K value of the at least one target cell after aging is determined, wherein the expression for calculating the aging K value is:

[0063] Aging K-value = (OCV1 - OCV2) / settling time

[0064] In the formula, OCV1 is the first open-circuit voltage of the target cell after formation, and OCV2 is the second open-circuit voltage of the target cell after standing in an environment with a temperature of 45±2℃ for 72±2h.

[0065] The aging K value of the at least one target cell is associated with the channel in the formation cabinet to obtain a one-to-one correspondence between the at least one target cell and each channel in the formation cabinet.

[0066] Determine whether the aging K value of at least one target cell after aging is greater than the failure threshold, wherein the failure threshold is obtained by analyzing the data distribution of the aging K value and the fully charged interface of the target cell.

[0067] If the aging K value of at least one target cell after aging is greater than the failure threshold, then at least one abnormal channel corresponding to the aging K value greater than the failure threshold is selected according to the correlation, and it is determined whether the number of channels in a certain formation cabinet to which the at least one abnormal channel belongs is greater than the first preset threshold.

[0068] If the value is greater than the first preset threshold, then the main pipe of a certain formation cabinet is determined to be blocked.

[0069] Computer-readable storage media may include a stored program area and a stored data area, wherein the stored program area may store an operating system and an application program required for at least one function; the stored data area may store data created based on the use of the data-based formation cabinet vacuum pipeline analysis system, etc. Furthermore, the computer-readable storage medium may include high-speed random access memory, and may also include memory, such as at least one disk storage device, flash memory device, or other non-volatile solid-state storage device. In some embodiments, the computer-readable storage medium may optionally include memory remotely located relative to a processor, which can be connected to the data-based formation cabinet vacuum pipeline analysis system via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0070] Figure 3 This is a schematic diagram of the structure of the electronic device provided in the embodiment of the present invention, such as... Figure 3 As shown, the device includes a processor 310 and a memory 320. The electronic device may also include an input device 330 and an output device 340. The processor 310, memory 320, input device 330, and output device 340 can be connected via a bus or other means. Figure 3 Taking a bus connection as an example, the memory 320 is the computer-readable storage medium described above. The processor 310 executes various server functions and data processing by running non-volatile software programs, instructions, and modules stored in the memory 320, thereby realizing the data-based vacuum pipeline analysis method for the formation cabinet described in the above embodiment. The input device 330 can receive input digital or character information and generate key signal inputs related to user settings and function control of the data-based vacuum pipeline analysis system. The output device 340 may include a display screen or other display device.

[0071] The aforementioned electronic device can execute the method provided in the embodiments of the present invention, and has the corresponding functional modules and beneficial effects for executing the method. Technical details not described in detail in this embodiment can be found in the method provided in the embodiments of the present invention.

[0072] In one implementation, the above-described electronic device is applied to a data-based formation cabinet vacuum pipeline analysis system for a client, comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to:

[0073] At least one target cell is formed based on a preset formation rule;

[0074] At least one target cell after formation is subjected to high-temperature aging, and the aging K value of the at least one target cell after aging is determined, wherein the expression for calculating the aging K value is:

[0075] Aging K-value = (OCV1 - OCV2) / settling time

[0076] In the formula, OCV1 is the first open-circuit voltage of the target cell after formation, and OCV2 is the second open-circuit voltage of the target cell after standing in an environment with a temperature of 45±2℃ for 72±2h.

[0077] The aging K value of the at least one target cell is associated with the channel in the formation cabinet to obtain a one-to-one correspondence between the at least one target cell and each channel in the formation cabinet.

[0078] Determine whether the aging K value of at least one target cell after aging is greater than the failure threshold, wherein the failure threshold is obtained by analyzing the data distribution of the aging K value and the fully charged interface of the target cell.

[0079] If the aging K value of at least one target cell after aging is greater than the failure threshold, then at least one abnormal channel corresponding to the aging K value greater than the failure threshold is selected according to the correlation, and it is determined whether the number of channels in a certain formation cabinet to which the at least one abnormal channel belongs is greater than the first preset threshold.

[0080] If the value is greater than the first preset threshold, then the main pipe of a certain formation cabinet is determined to be blocked.

[0081] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., including several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods of various embodiments or some parts of embodiments.

[0082] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A data-driven method for analyzing vacuum piping in a formation cabinet, characterized in that, include: At least one target cell is formed based on a preset formation rule; At least one target cell after formation is subjected to high-temperature aging, and the aging K value of the at least one target cell after aging is determined, wherein the expression for calculating the aging K value is: Aging K-value = (OCV1 - OCV2) / settling time In the formula, OCV1 is the first open-circuit voltage of the target cell after formation, and OCV2 is the second open-circuit voltage of the target cell after standing in an environment with a temperature of 45±2℃ for 72±2h. The aging K value of the at least one target cell is associated with the channel in the formation cabinet to obtain a one-to-one correspondence between the at least one target cell and each channel in the formation cabinet. Determine whether the aging K value of at least one target cell after aging is greater than the failure threshold, wherein the failure threshold is obtained by analyzing the data distribution of the aging K value and the fully charged interface of the target cell. If the aging K value of at least one target cell after aging is greater than the failure threshold, then at least one abnormal channel corresponding to the aging K value greater than the failure threshold is selected according to the correlation, and it is determined whether the number of channels in a certain formation cabinet to which the at least one abnormal channel belongs is greater than the first preset threshold. If the value is greater than the first preset threshold, then the main pipe of a certain formation cabinet is determined to be blocked.

2. The data-driven vacuum piping analysis method for a formation cabinet according to claim 1, characterized in that, The formation of at least one target cell based on a preset formation rule includes: The at least one target battery cell is placed in an environment where the vacuum level is less than a second preset threshold for a first preset time. After a first preset time period, the at least one target cell is subjected to a first constant current charge for a second preset time period in an environment where the vacuum level is less than a second preset threshold. During the first constant current charge, the charge and discharge current is 0.1c and the upper limit voltage is 3350mV. After the first constant current charging lasting for a second preset duration, the at least one target cell is placed under vacuum conditions less than a second preset threshold for a third preset duration. After a third preset time period, the at least one target cell is subjected to a second constant current charge for a fourth preset time period in an environment where the vacuum level is less than the second preset threshold. During the second constant current charge, the charging and discharging current is 0.25c and the upper limit voltage is 3350mV. After a second constant current charge lasting for a fourth preset duration, the at least one target cell is placed under normal pressure for a fifth preset duration.

3. The data-driven vacuum piping analysis method for a formation cabinet according to claim 2, characterized in that, The first preset duration, the second preset duration, the third preset duration, the fourth preset duration, and the fifth preset duration are set to 1.2 min, 10 min, 0.5 min, 70 min, and 20 min, respectively.

4. The data-driven vacuum piping analysis method for a formation cabinet according to claim 1, characterized in that, The step of subjecting at least one target cell after formation to high-temperature aging and determining the aging K value of at least one target cell after aging includes: Measure the first open-circuit voltage OCV1 of at least one target cell after formation; The measured target cell is placed in a high-temperature chamber for 70-74 hours, and the required temperature in the high-temperature chamber is 43-47°C. After the settling period is completed, the second open-circuit voltage OCV2 of the at least one target cell is measured; The aging K value of the at least one target cell is calculated based on the first open-circuit voltage OCV1, the second open-circuit voltage OCV2, and the resting time.

5. The data-driven vacuum piping analysis method for a formation cabinet according to claim 1, characterized in that, Before determining whether the aging K value of at least one target cell after aging is greater than the failure threshold, the method further includes: The failure threshold is defined, and the specific definition process is as follows: The channel-shaped black stripes at the fully charged negative electrode interface of the target battery cell are identified as discrete points. The aging K value of the target cell when discrete points exist is defined as the failure critical point.

6. The data-driven vacuum piping analysis method for a formation cabinet according to claim 1, characterized in that, After determining whether the aging K value of at least one target cell after aging is greater than the failure threshold, the method further includes: If the aging K value of at least one target cell after aging is not greater than the failure critical point, then the at least one target cell is determined to be a normal cell.

7. The data-driven vacuum piping analysis method for a formation cabinet according to claim 1, characterized in that, After determining whether the number of channels in a certain formation cabinet belonging to the at least one abnormal channel is greater than a first preset threshold, the method further includes: If the value is not greater than the first preset threshold, then the branch pipe in a certain formation cabinet is determined to be blocked.

8. A data-driven vacuum piping analysis system for a formation cabinet, characterized in that, include: The formation module is configured to form at least one target cell based on a preset formation rule; The first determining module is configured to perform high-temperature aging on at least one target cell after formation, and determine the aging K value of the at least one target cell after aging, wherein the expression for calculating the aging K value is: Aging K-value = (OCV1 - OCV2) / settling time In the formula, OCV1 is the first open-circuit voltage of the target cell after formation, and OCV2 is the second open-circuit voltage of the target cell after standing in an environment with a temperature of 45±2℃ for 72±2h. The association module is configured to associate the aging K value of the at least one target cell with the channel in the formation cabinet, thereby obtaining a one-to-one association relationship between the at least one target cell and each channel in the formation cabinet. The first judgment module is configured to judge whether the aging K value of at least one target cell after aging is greater than the failure critical point, wherein the failure critical point is obtained by the data distribution of the aging K value and the disassembly analysis of the fully charged interface of the target cell. The second judgment module is configured to, if the aging K value of at least one target cell after aging is greater than the failure threshold, then, based on the correlation, filter out at least one abnormal channel corresponding to the aging K value greater than the failure threshold, and determine whether the number of channels in a certain formation cabinet to which the at least one abnormal channel belongs is greater than a first preset threshold. The second determining module is configured to determine that the main pipe of a certain formation cabinet is blocked if the value is greater than a first preset threshold.

9. An electronic device, characterized in that, include: At least one processor, and a memory communicatively connected to the at least one processor, wherein the memory stores instructions executable by the at least one processor to enable the at least one processor to perform the method according to any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the program is executed by the processor, it implements the method according to any one of claims 1 to 7.

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