Semiconductor power module, motor controller and vehicle

Abstract

The application discloses a semiconductor power module, a motor controller and a vehicle, which comprises a substrate with a first direction and a second direction perpendicular to each other; a first conductive area and a second conductive area arranged on the substrate, the first conductive area comprising a first horizontal section and a second horizontal section, the second conductive area comprising a third horizontal section and a fourth horizontal section, the first horizontal section, the third horizontal section, the second horizontal section and the fourth horizontal section being arranged in sequence along the first direction, wherein the first conductive area and the second conductive area are used for transmitting direct current signals; at least one first power chip and at least one second power chip, the first power chip being connected with the first horizontal section and the third horizontal section respectively, and the second power chip being connected with the second horizontal section and the fourth horizontal section respectively. The semiconductor power module has the advantages of small stray inductance and good heat dissipation effect.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor power module, a motor controller, and a vehicle. Background Technology

[0002] Semiconductor power modules are widely used in industry. They are typically used in inverters to convert AC to DC or vice versa.

[0003] Semiconductor power modules have advantages such as high integration and small size. However, during the inverter process, the stray inductance of the circuit generates excessive voltage during the switching of the semiconductor chip, which causes electromagnetic interference due to damped oscillation and increases switching losses. At the same time, if a large current is to be output, multiple chips need to be connected in parallel, but this will make the chip occupy a larger space and the inductance will also increase. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems existing in the prior art. Therefore, one object of the present invention is to provide a semiconductor power module that has advantages such as low stray inductance and good heat dissipation.

[0005] The present invention also proposes a motor controller having the above-mentioned semiconductor power module.

[0006] The present invention also proposes a vehicle having the above-mentioned motor controller.

[0007] To achieve the above objectives, a semiconductor power module is provided according to a first aspect embodiment of the present invention, comprising: a substrate having a first direction and a second direction orthogonal to each other; a first conductive region and a second conductive region spaced apart on the substrate, the first conductive region including a first horizontal segment and a second horizontal segment, the second conductive region including a third horizontal segment and a fourth horizontal segment, the first horizontal segment, the third horizontal segment, the second horizontal segment and the fourth horizontal segment being arranged sequentially along the first direction, wherein the first conductive region and the second conductive region are used to transmit DC signals; at least one first power chip and at least one second power chip, the first power chip being connected to the first horizontal segment and the third horizontal segment respectively, and the second power chip being connected to the second horizontal segment and the fourth horizontal segment respectively.

[0008] The semiconductor power module according to embodiments of the present invention has advantages such as low stray inductance and good heat dissipation.

[0009] According to some embodiments of the present invention, the first conductive region further includes a first longitudinal segment, the first transverse segment and the second transverse segment both extending along the second direction, the first longitudinal segment extending along the first direction and having its two ends connected to the first transverse segment and the second transverse segment respectively; the second conductive region further includes a second longitudinal segment, the third transverse segment and the fourth transverse segment both extending along the second direction, the second longitudinal segment extending along the first direction and having its two ends connected to the third transverse segment and the fourth transverse segment respectively; wherein, the first longitudinal segment and the second longitudinal segment are respectively disposed adjacent to opposite sides of the substrate in the second direction.

[0010] According to some embodiments of the present invention, one end of the first longitudinal segment is flush with the side of the first transverse segment opposite to the second transverse segment, and the other end of the first longitudinal segment is flush with the side of the second transverse segment opposite to the first transverse segment; one end of the second longitudinal segment is flush with the side of the third transverse segment opposite to the fourth transverse segment, and the other end of the second longitudinal segment is flush with the side of the fourth transverse segment opposite to the third transverse segment.

[0011] According to some embodiments of the present invention, the side of the first longitudinal segment facing away from the second longitudinal segment is flush with the end of the fourth transverse segment away from the second longitudinal segment; the side of the second longitudinal segment facing away from the first longitudinal segment is flush with the side of the first transverse segment away from the first longitudinal segment.

[0012] According to some embodiments of the present invention, the first power chip is mounted on the third horizontal segment, and the first power chip is connected to the first horizontal segment via a first connector.

[0013] According to some embodiments of the present invention, the second power chip is mounted on the fourth horizontal segment, and the second power chip is connected to the second horizontal segment via a second connector.

[0014] According to some embodiments of the present invention, the semiconductor power module includes: a third conductive region disposed on the substrate and spaced apart from the first conductive region and the second conductive region, the third conductive region being configured as a closed loop surrounding the first conductive region and the second conductive region.

[0015] According to some embodiments of the present invention, the third conductive region includes a third longitudinal segment, a fourth longitudinal segment, a fifth transverse segment, and a sixth transverse segment. The third longitudinal segment and the fourth longitudinal segment extend along the first direction and are spaced apart along the second direction. The fifth transverse segment and the sixth transverse segment extend along the second direction and are spaced apart along the first direction. The third longitudinal segment, the fifth transverse segment, the fourth longitudinal segment, and the sixth transverse segment are connected end-to-end in sequence. The first conductive region and the second conductive region are located between the third longitudinal segment and the fourth longitudinal segment in the second direction. The fifth transverse segment is located on the side of the fourth transverse segment opposite to the third transverse segment in the first direction. The third conductive region is used to transmit DC signals. The semiconductor power module includes at least one third power chip and at least one fourth power chip. The third power chip is disposed in the fifth transverse segment and connected to the fourth transverse segment. The fourth power chip is disposed in the fifth transverse segment and connected to the fourth transverse segment.

[0016] According to some embodiments of the present invention, there are multiple third power chips, which are spaced apart along the second direction and arranged in a row along the second direction; there are multiple fourth power chips, which are spaced apart along the second direction and arranged in a row along the second direction; the row containing the third power chips and the row containing the fourth power chips are spaced apart along the first direction; the sum of the number of the first power chips and the number of the second power chips is the same as the sum of the number of the third power chips and the number of the fourth power chips.

[0017] According to some embodiments of the present invention, a plurality of the third power chips and a plurality of the fourth power chips are arranged alternately along the second direction.

[0018] According to some embodiments of the present invention, the semiconductor power module includes: a fourth conductive region disposed on the substrate and spaced apart from the first conductive region, the second conductive region and the third conductive region, the fourth conductive region extending along the second direction and located on the side of the fifth horizontal segment opposite to the fourth horizontal segment in the first direction, the third power chip and the fourth power chip being connected to the fourth conductive region; wherein, the fourth conductive region is used to transmit alternating current signals.

[0019] According to some embodiments of the present invention, the third power chip is connected to the fourth horizontal segment via a third connector; the third power chip is connected to the fourth conductive region via a fourth connector.

[0020] According to some embodiments of the present invention, the third connector and the fourth connector are configured as an integral piece extending along the first direction.

[0021] According to some embodiments of the present invention, the fourth connector and the fourth power chip are spaced apart in the second direction.

[0022] According to some embodiments of the present invention, the fourth power chip is connected to the fourth horizontal segment via a fifth connector; the fourth power chip is connected to the fourth conductive region via a sixth connector.

[0023] According to some embodiments of the present invention, the fifth connector and the sixth connector are configured as an integral piece extending along the first direction.

[0024] According to some embodiments of the present invention, the fifth connector and the third power chip are spaced apart in the second direction.

[0025] According to some embodiments of the present invention, the semiconductor power module includes: a first DC transmission terminal connected to a first horizontal segment and extending beyond the edge of the substrate; a second DC transmission terminal connected to an end of a third vertical segment away from the fifth horizontal segment and extending beyond the edge of the substrate; a third DC transmission terminal connected to an end of a fourth vertical segment away from the fifth horizontal segment and extending beyond the edge of the substrate; and an AC transmission terminal connected to a fourth conductive region and extending beyond the edge of the substrate.

[0026] According to some embodiments of the present invention, a low-voltage connection portion is provided on the side of the first horizontal segment facing away from the second horizontal segment. The length of the low-voltage connection portion is less than the length of the first horizontal segment and greater than the width of the first DC transmission terminal. The first DC transmission terminal is connected to the low-voltage connection portion.

[0027] According to some embodiments of the present invention, a first high-voltage connection portion is provided at one end of the third longitudinal segment away from the fifth transverse segment. The dimension of the first high-voltage connection portion in the second direction is greater than the width of the third longitudinal segment and greater than the width of the second DC transmission terminal. The second DC transmission terminal is connected to the first high-voltage connection portion. A second high-voltage connection portion is provided at one end of the fourth longitudinal segment away from the fifth transverse segment. The dimension of the second high-voltage connection portion in the second direction is greater than the width of the fourth longitudinal segment and greater than the width of the third DC transmission terminal. The third DC transmission terminal is connected to the second high-voltage connection portion.

[0028] According to some embodiments of the present invention, the substrate includes: an insulating layer; a circuit layer connected to one side of the insulating layer in the thickness direction, wherein the first conductive region and the second conductive region are formed in the circuit layer; and a heat dissipation layer connected to the other side of the insulating layer in the thickness direction.

[0029] According to some embodiments of the present invention, the semiconductor power module includes: an insulating cover, the insulating cover being mounted on the substrate and covering the first conductive region, the second conductive region, the first power chip, and the second power chip.

[0030] According to a second aspect of the present invention, a motor controller is provided, comprising: a heat sink base plate and a coolant channel, wherein the heat sink base plate is mounted on the coolant channel; and a semiconductor power module according to a first aspect of the present invention, wherein the semiconductor power module is disposed on the heat sink base plate.

[0031] The motor controller according to the second aspect of the present invention, by utilizing the semiconductor power module according to the first aspect of the present invention, has advantages such as low stray inductance and good heat dissipation.

[0032] According to some embodiments of the present invention, there are multiple semiconductor power modules arranged along the second direction on the heat dissipation base plate.

[0033] According to a third aspect of the present invention, a vehicle is provided, comprising: an electric motor; and a motor controller according to a second aspect of the present invention, the motor controller being connected to the electric motor.

[0034] The vehicle according to the third aspect embodiment of the present invention, by utilizing the motor controller according to the second aspect embodiment of the present invention, has advantages such as low stray inductance and good heat dissipation.

[0035] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0036] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0037] Figure 1 This is a schematic diagram of the structure of a semiconductor power module according to an embodiment of the present invention.

[0038] Figure 2 This is a schematic diagram of the structure of a semiconductor power module according to another embodiment of the present invention.

[0039] Figure 3This is a schematic diagram of the structure of a semiconductor power module according to another embodiment of the present invention.

[0040] Figure 4 This is a schematic diagram showing the connection of the substrate, the first DC transmission terminal, the second DC transmission terminal, the third DC transmission terminal, and the AC transmission terminal according to an embodiment of the present invention.

[0041] Figure 5 This is a schematic diagram showing the connection of the substrate, the first DC transmission terminal, the second DC transmission terminal, the third DC transmission terminal, and the AC transmission terminal from another perspective according to an embodiment of the present invention.

[0042] Figure 6 This is a circuit diagram of a semiconductor power module according to an embodiment of the present invention.

[0043] Figure 7 This is a schematic diagram showing the connection of the substrate, the third DC transmission terminal, and the AC transmission terminal according to an embodiment of the present invention.

[0044] Figure 8 This is a schematic diagram of the substrate structure according to an embodiment of the present invention.

[0045] Figure 9 This is a schematic diagram of the structure of a motor controller according to an embodiment of the present invention.

[0046] Figure label:

[0047] Semiconductor power module 1, motor controller 2,

[0048] Substrate 100, insulating layer 101, circuit layer 102, heat dissipation layer 103, heat dissipation base plate 104.

[0049] First conductive region 110, first horizontal segment 111, second horizontal segment 112, first vertical segment 113

[0050] Second conductive region 120, third horizontal segment 121, fourth horizontal segment 122, second vertical segment 123

[0051] Third conductive region 130, third longitudinal segment 131, fourth longitudinal segment 132, fifth transverse segment 133, sixth transverse segment 134.

[0052] Fourth conductive region 140

[0053] First power chip 200, first connector 210

[0054] Second power chip 300, second connector 310

[0055] Third power chip 400, third connector 410, fourth connector 420

[0056] Fourth power chip 500, fifth connector 510, sixth connector 520,

[0057] First DC transmission terminal 600, low-voltage connection part 610

[0058] Second DC transmission terminal 700, first high-voltage connection part 710

[0059] Third DC transmission terminal 800, second high-voltage connection part 810

[0060] AC transmission terminal 900,

[0061] The first direction is the direction indicated by arrow A, and the second direction is the direction indicated by arrow B. Detailed Implementation

[0062] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. The embodiments of the present invention are described in detail below.

[0063] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0064] In the description of this invention, "a plurality of" means two or more.

[0065] The semiconductor power module 1 according to an embodiment of the present invention is described below with reference to the accompanying drawings.

[0066] like Figures 1-9 As shown, the semiconductor power module 1 according to an embodiment of the present invention includes a substrate 100, at least one first power chip 200 and at least one second power chip 300.

[0067] The substrate 100 has a first direction and a second direction that are orthogonal to each other. A first conductive region 110 and a second conductive region 120 are disposed on the substrate 100 at intervals. The first conductive region 110 includes a first horizontal segment 111 and a second horizontal segment 112. The second conductive region 120 includes a third horizontal segment 121 and a fourth horizontal segment 122. The first horizontal segment 111, the third horizontal segment 121, the second horizontal segment 112 and the fourth horizontal segment 122 are arranged sequentially along the first direction. The first conductive region 110 and the second conductive region 120 are used to transmit DC signals. A first power chip 200 is connected to the first horizontal segment 111 and the third horizontal segment 121, respectively. A second power chip 300 is connected to the second horizontal segment 112 and the fourth horizontal segment 122, respectively.

[0068] In other words, if the first direction is the length direction of the substrate 100, then the second direction is the width direction of the substrate 100; or, if the first direction is the width direction of the substrate 100, then the second direction is the length direction of the substrate 100. This can be set according to the actual situation, such as the shape of the substrate 100, and there is no limitation on this.

[0069] For example, the semiconductor power module 1 can be a silicon carbide metal semiconductor field-effect transistor (SiC MOSFET), or a device that combines an IGBT (Insulated Gate Bipolar Transistor) and an FRD (Fastrecovery diode).

[0070] In practical applications, the semiconductor power module 1 needs to be encapsulated. For example, it can be encapsulated using a molding process, which involves molding the semi-finished semiconductor power module 1 into a molded module. Alternatively, it can be potted, which involves encapsulating the semi-finished semiconductor power module 1 with insulating materials such as silicone gel. In this process, all the structures of the semiconductor power module 1 are installed within a frame, and silicone gel is filled into the frame to form a potted module.

[0071] It should be noted that the semiconductor power module 1 is a half-bridge power module, which can be used in a half-bridge circuit or a three-phase full-bridge circuit. Specifically, for the plastic encapsulation method, a single semiconductor power module 1 forms a plastic encapsulation body, that is, a half-bridge circuit forms a plastic encapsulation body. For the potting method, a single semiconductor power module 1 can form a potting body, that is, a half-bridge circuit forms a potting body, or three semiconductor power modules 1 can form a potting body, that is, a three-phase full-bridge circuit composed of three half-bridge circuits forms a potting body.

[0072] According to an embodiment of the present invention, a semiconductor power module 1 has a first conductive region 110 and a second conductive region 120 on a substrate 100 to avoid short circuit problems caused by the overlap of the first conductive region 110 and the second conductive region 120. The first conductive region 110 includes a first horizontal segment 111 and a second horizontal segment 112, and the second conductive region 120 includes a third horizontal segment 121 and a fourth horizontal segment 122. The first conductive region 110 and the second conductive region 120 are used to transmit DC signals. The first horizontal segment 111 and the second horizontal segment 112 can be connected in series, and the third horizontal segment 121 and the fourth horizontal segment 122 can be connected in series.

[0073] In addition, the first horizontal segment 111, the third horizontal segment 121, the second horizontal segment 112 and the fourth horizontal segment 122 are arranged sequentially along the first direction. The first power chip 200 is connected to the first horizontal segment 111 and the third horizontal segment 121 respectively, and the second power chip 300 is connected to the second horizontal segment 112 and the fourth horizontal segment 122 respectively.

[0074] Specifically, if the first power chip 200 is installed in the first horizontal segment 111, then the second power chip 300 is installed in the second horizontal segment 112; if the first power chip 200 is installed in the third horizontal segment 121, then the second power chip 300 is installed in the fourth horizontal segment 122. That is, the first power chip 200 and the second power chip 300 are simultaneously installed in either the first conductive region 110 or the second conductive region 120, so that the first power chip 200 and the second power chip 300 are connected in series.

[0075] Since the first power chip 200 and the second power chip 300 must be separated by one of the second horizontal segment 112 and the third horizontal segment 121, the distance between the first power chip 200 and the second power chip 300 is larger, which can avoid the accumulation of heat between the first power chip 200 and the second power chip 300 and improve the heat dissipation effect of the semiconductor power module 1.

[0076] For example, when the first power chip 200 and the second power chip 300 are respectively disposed on the first horizontal segment 111 and the second horizontal segment 112 of the first conductive region 110, while ensuring the connection area between the first power chip 200 and the second power chip 300 and the first conductive region 110, it is not necessary to set the size of the first horizontal segment 111 and the second horizontal segment 112 in the second direction to be too large, which can reduce the size of the semiconductor power module 1 in the second direction.

[0077] Furthermore, compared to related technologies that only have a first horizontal segment and a second horizontal segment arranged sequentially along a first direction, both the first power chip and the second power chip need to be installed on the first horizontal segment and connected to the second horizontal segment. Moreover, the distance between the first power chip and the second horizontal segment is greater than that between the second power chip and the second power chip. Therefore, the connection structure between the second horizontal segment and the first power chip needs to be relatively long. As a result, the connection structure between the second horizontal segment and the first power chip not only generates a lot of heat but also has the problem of large stray inductance. In contrast, the first power chip 200 of the semiconductor power module 1 of this embodiment is connected to the third horizontal segment 121, and the second power chip 300 is connected to the fourth horizontal segment 122. Therefore, the size of the connection structure between each of the first power chip 200 and the second power chip 300 and the second conductive area 120 is relatively small. This not only generates less heat and facilitates heat dissipation but also has small stray inductance, which is beneficial for reducing switching losses.

[0078] When the first power chip 200 and the second power chip 300 are respectively disposed in the third horizontal segment 121 and the fourth horizontal segment 122 of the second conductive region 120, while ensuring the connection area between the first power chip 200 and the second power chip 300 and the second conductive region 120, it is not necessary to set the size of the third horizontal segment 121 and the fourth horizontal segment 122 in the second direction to be too large, which can reduce the size of the semiconductor power module 1 in the second direction.

[0079] Furthermore, compared to related technologies that only have a first conductive region with a first horizontal segment (i.e., the first conductive region does not have a second horizontal segment), where both the first power chip and the second power chip need to be connected to the first horizontal segment, the connection structure between the first horizontal segment and the second power chip needs to be relatively long. Therefore, the connection structure between the first horizontal segment and the second power chip not only generates a lot of heat but also has the problem of large stray inductance. In contrast, the first power chip 200 of the semiconductor power module 1 in this embodiment of the invention is connected to the first horizontal segment 111, and the second power chip 300 is connected to the second horizontal segment 112. Therefore, the size of the connection structure between each of the first power chip 200 and the second power chip 300 and the first conductive region 110 is relatively small. This not only generates less heat and facilitates heat dissipation but also has small stray inductance, which helps to reduce switching losses.

[0080] In summary, the semiconductor power module 1 of the present invention has low stray inductance and low temperature at the location of the power chip, and the heat dissipation effect is also very good, which is beneficial for applying the semiconductor power module 1 in circuits with high switching speed.

[0081] Thus, the semiconductor power module 1 according to the embodiments of the present invention has advantages such as low stray inductance and good heat dissipation.

[0082] According to some specific embodiments of the present invention, such as Figure 4 and Figure 5 As shown, the first conductive region 110 further includes a first longitudinal segment 113, a first transverse segment 111 and a second transverse segment 112 both extending along a second direction, and the first longitudinal segment 113 extending along a first direction with its two ends connected to the first transverse segment 111 and the second transverse segment 112 respectively. The second conductive region 120 further includes a second longitudinal segment 123, a third transverse segment 121 and a fourth transverse segment 122 both extending along a second direction, and the second longitudinal segment 123 extending along a first direction with its two ends connected to the third transverse segment 121 and the fourth transverse segment 122 respectively. The first longitudinal segment 113 and the second longitudinal segment 123 are respectively disposed adjacent to opposite sides of the substrate 100 in the second direction.

[0083] In other words, the first conductive region 110 forms a "U" shaped structure, the second conductive region 120 forms a "U" shaped structure, and the first conductive region 110 is inserted into the second conductive region 120 through the opening of the second conductive region 120, and the second conductive region 120 is inserted into the first conductive region 110 through the opening of the first conductive region 110.

[0084] In this way, the first horizontal segment 111 and the second horizontal segment 112 are connected in series through the first vertical segment 113, and the third horizontal segment 121 and the fourth horizontal segment 122 are connected in series through the second vertical segment 123, which can realize the series connection between the first power chip 200 and the second power chip 300, and the first conductive area 110 and the second conductive area 120 occupy less space overall.

[0085] According to some specific embodiments of the present invention, such as Figure 4 and Figure 5 As shown, one end of the first longitudinal segment 113 is flush with the side of the first transverse segment 111 facing away from the second transverse segment 112, and the other end of the first longitudinal segment 113 is flush with the side of the second transverse segment 112 facing away from the first transverse segment 111. One end of the second longitudinal segment 123 is flush with the side of the third transverse segment 121 facing away from the fourth transverse segment 122, and the other end of the second longitudinal segment 123 is flush with the side of the fourth transverse segment 122 facing away from the third transverse segment 121.

[0086] In other words, the sum of the dimensions of the first vertical segment 113 and the fourth horizontal segment 122 in the first direction is equal to the sum of the dimensions of the second vertical segment 123 and the first horizontal segment 111 in the first direction. Thus, the first conductive region 110 and the second conductive region 120 together occupy less space in the first direction, and the first power chip 200 and the second power chip 300 are more evenly distributed in the first direction.

[0087] According to some specific embodiments of the present invention, such as Figure 4 and Figure 5As shown, the side of the first longitudinal segment 113 facing away from the second longitudinal segment 123 is flush with the end of the fourth transverse segment 122 that is away from the second longitudinal segment 123, and the side of the second longitudinal segment 123 facing away from the first longitudinal segment 113 is flush with the side of the first transverse segment 111 that is away from the first longitudinal segment 113.

[0088] In other words, the length of the first horizontal segment 111 and the length of the fourth horizontal segment 122 can be the same, the length of the second horizontal segment 112 and the length of the third horizontal segment 121 can be the same, the sum of the dimensions of the second horizontal segment 112 and the second vertical segment 123 in the second direction is approximately equal to the length of the first horizontal segment 111, and the sum of the dimensions of the third horizontal segment 121 and the first vertical segment 113 in the second direction is approximately equal to the length of the fourth horizontal segment 122.

[0089] In this way, the first conductive region 110 and the second conductive region 120 together occupy less space in the second direction, which is beneficial to reducing the size of the semiconductor power module 1.

[0090] According to some specific embodiments of the present invention, such as Figures 1-3 As shown, the first power chip 200 is mounted on the third horizontal segment 121. The first power chip 200 is connected to the first horizontal segment 111 via a first connector 210, which is perpendicular to both the first horizontal segment 111 and the third horizontal segment 121. The first connector 210 can be made of aluminum wire, copper wire, gold wire, copper strip, aluminum strip, or copper connecting piece, etc., and the fourth connector 420 can also be made of aluminum wire, copper wire, gold wire, copper strip, aluminum strip, or copper connecting piece, etc.

[0091] In this way, the first connector 210 and the first power chip 200 can achieve the connection between the first conductive area 110 and the second conductive area 120. Furthermore, the first connector 210 is relatively short, which can reduce the parasitic inductance generated by the first connector 210 in the circuit, thereby reducing switching losses and improving the internal layout.

[0092] According to some specific embodiments of the present invention, such as Figures 1-3 As shown, the second power chip 300 is mounted on the fourth horizontal segment 122. The second power chip 300 is connected to the second horizontal segment 112 via a second connector 310, which is perpendicular to both the second horizontal segment 112 and the fourth horizontal segment 122. The second connector 310 can be made of aluminum wire, copper wire, gold wire, copper strip, aluminum strip, or copper connecting piece, etc., and the fourth connector 420 can also be made of aluminum wire, copper wire, gold wire, copper strip, aluminum strip, or copper connecting piece, etc.

[0093] In this way, the second connector 310 and the second power chip 300 can connect the first conductive region 110 and the second conductive region 120. Furthermore, the shorter length of the second connector 310 reduces the parasitic inductance it generates in the circuit, thereby reducing switching losses and improving internal layout. Additionally, the greater dispersion of the first power chip 200 and the second power chip 300 reduces heat accumulation and improves the heat dissipation capacity of the semiconductor power module 1.

[0094] According to some specific embodiments of the present invention, such as Figures 1-5 As shown, the semiconductor power module 1 also includes a third conductive region 130, a third power chip 400, and a fourth power chip 500.

[0095] The third conductive region 130 is disposed on the substrate 100 and spaced apart from the first conductive region 110 and the second conductive region 120. The third conductive region 130 is configured as a closed ring surrounding the first conductive region 110 and the second conductive region 120.

[0096] Specifically, the third conductive region 130 includes a third longitudinal segment 131, a fourth longitudinal segment 132, a fifth transverse segment 133, and a sixth transverse segment 134. The third longitudinal segment 131 and the fourth longitudinal segment 132 extend along a first direction and are spaced apart along a second direction. The fifth transverse segment 133 and the sixth transverse segment 134 extend along a second direction and are spaced apart along a first direction. The third longitudinal segment 131, the fifth transverse segment 133, the fourth longitudinal segment 132, and the sixth transverse segment 134 are connected end to end in sequence. The first conductive region 110 and the second conductive region 120 are located between the third longitudinal segment 131 and the fourth longitudinal segment 132 in the second direction. The fifth transverse segment 133 is located on the side of the fourth transverse segment 122 facing away from the third transverse segment 121 in the first direction. The third conductive region 130 is used to transmit DC signals. The third power chip 400 and the fourth power chip 500 are disposed in the fifth transverse segment 133 and are both connected to the fourth transverse segment 122.

[0097] In other words, the first power chip 200, the second power chip 300, the third power chip 400 and the fourth power chip 500 are respectively located in the first conductive region 110, the second conductive region 120 and the third conductive region 130, thereby avoiding the problem of increased heat caused by the compact layout of the power chips and improving the heat dissipation of the semiconductor power module 1.

[0098] Furthermore, the third power chip 400 and the fourth power chip 500 are connected in series on the third conductive region 130. This arrangement not only allows the inductances inside the semiconductor power module 1 to cancel each other out when the module is working, effectively reducing the parasitic inductance of the entire module, but also optimizes the internal structural layout of the semiconductor power module 1, which is beneficial to improving the integration of the semiconductor power module 1.

[0099] In addition, the third power chip 400 and the fourth power chip 500 are both connected to the second conductive region 120, so that the first conductive region 110, the second conductive region 120 and the third conductive region 130 are electrically connected to each other, and the semiconductor power module 1 can realize DC input and output.

[0100] According to some specific embodiments of the present invention, such as Figures 1-5 As shown, multiple third power chips 400 are spaced apart along the second direction, and these multiple third power chips 400 are arranged in a row along the second direction. Multiple fourth power chips 500 are also spaced apart along the second direction, and these multiple fourth power chips 500 are arranged in a row along the second direction. The rows containing the third power chips 400 and the rows containing the fourth power chips 500 are spaced apart along the first direction. The sum of the number of first power chips 200 and second power chips 300 is the same as the sum of the number of third power chips 400 and fourth power chips 500.

[0101] For example, the third power chip 400 can correspond one-to-one with the first power chip 200, and the fourth power chip 500 can correspond one-to-one with the second power chip 300. Furthermore, the total number of the first power chips 200 and the second power chips 300 can be set according to the output current of the semiconductor power module 1. For example, the total number of the first power chips 200 and the second power chips 300 can be 6, 7, or 8. Of course, the total number of the first power chips 200 and the second power chips 300 can also be other numbers, as long as they meet the usage requirements of the semiconductor power module 1 in different scenarios.

[0102] According to some specific embodiments of the present invention, such as Figures 1-3 As shown, multiple third power chips 400 and multiple fourth power chips 500 are arranged alternately along the second direction. In this way, the wiring between the third power chips 400 and the fourth power chips 500 is less likely to interfere, the electrical connection is safer, the space utilization of the semiconductor power module 1 is improved, and the more dispersed arrangement of the third power chips 400 and the fourth power chips 500 further improves the heat dissipation performance of the semiconductor power module 1.

[0103] According to some specific embodiments of the present invention, such as Figures 1-5 As shown, the semiconductor power module 1 further includes a fourth conductive region 140. The fourth conductive region 140 is disposed on the substrate 100 and is spaced apart from the first conductive region 110, the second conductive region 120 and the third conductive region 130, respectively. The fourth conductive region 140 extends along a second direction and is located on the side of the fifth horizontal segment 133 opposite to the fourth horizontal segment 122 in a first direction. The third power chip 400 and the fourth power chip 500 are both connected to the fourth conductive region 140, wherein the fourth conductive region 140 is used to transmit AC signals.

[0104] In this way, semiconductor power module 1 can realize the function of circuit conversion between DC and AC, and semiconductor power module 1 can be a half-bridge circuit.

[0105] According to some specific embodiments of the present invention, such as Figures 1-3 As shown, the third power chip 400 is connected to the fourth horizontal segment 122 via a third connector 410, which is perpendicular to the fourth horizontal segment 122 and the fifth horizontal segment 133. The third power chip 400 is also connected to the fourth conductive area 140 via a fourth connector 420, which is perpendicular to the fifth horizontal segment 133 and the fourth conductive area 140. The third connector 410 can be made of aluminum wire, copper wire, gold wire, copper strip, aluminum strip, or copper connecting piece, etc., and the fourth connector 420 can also be made of aluminum wire, copper wire, gold wire, copper strip, aluminum strip, or copper connecting piece, etc.

[0106] That is, the third connector 410 and the fourth connector 420 are parallel, the fourth horizontal segment 122, the fifth horizontal segment 133 and the fourth conductive area 140 are parallel, and the third connector 410 and the fourth connector 420 are perpendicular to the fourth horizontal segment 122, the fifth horizontal segment 133 and the fourth conductive area 140, respectively.

[0107] In this way, the lengths of the third connector 410 and the fourth connector 420 are shorter, which simplifies the wiring layout, reduces the inductance generated by the third connector 410 and the fourth connector 420, and thus reduces switching losses and heat generation, improving heat dissipation performance.

[0108] According to some specific embodiments of the present invention, such as Figures 1-3 As shown, the third connector 410 and the fourth connector 420 are constructed as an integral piece extending along the first direction. This reduces the difficulty of layout, improves production efficiency, generates less inductance, and improves the functional performance of the semiconductor power module 1.

[0109] According to some specific embodiments of the present invention, such as Figures 1-3 As shown, the fourth connector 420 and the fourth power chip 500 are spaced apart in the second direction. This avoids contact between the fourth connector 420 and the fourth power chip 500, which would affect the reliability of the electrical connection and thus ensure the effectiveness of the semiconductor power module 1.

[0110] According to some specific embodiments of the present invention, such as Figures 1-3As shown, the fourth power chip 500 is connected to the fourth horizontal segment 122 via a fifth connector 510, which is perpendicular to both the fourth horizontal segment 122 and the fifth horizontal segment 133. The fourth power chip 500 is also connected to the fourth conductive area 140 via a sixth connector 520, which is perpendicular to both the fifth horizontal segment 133 and the fourth conductive area 140. The fifth connector 510 can be made of aluminum wire, copper wire, gold wire, copper strip, aluminum strip, or a copper connecting piece, etc., and the sixth connector 520 can also be made of aluminum wire, copper wire, gold wire, copper strip, aluminum strip, or a copper connecting piece, etc.

[0111] That is, the fifth connector 510 and the sixth connector 520 are parallel, the fourth horizontal segment 122, the fifth horizontal segment 133 and the fourth conductive area 140 are parallel, and the fifth connector 510 and the sixth connector 520 are perpendicular to the fourth horizontal segment 122, the fifth horizontal segment 133 and the fourth conductive area 140, respectively.

[0112] In this way, the lengths of the fifth connector 510 and the sixth connector 520 are shorter, simplifying the wiring layout, reducing the inductance generated by the fifth connector 510 and the sixth connector 520, thereby reducing switching losses and heat generation, and improving heat dissipation performance.

[0113] According to some specific embodiments of the present invention, such as Figures 1-3 As shown, the fifth connector 510 and the sixth connector 520 are constructed as an integral piece extending along the first direction. This reduces the difficulty of layout, improves production efficiency, generates less inductance, and improves the functional performance of the semiconductor power module 1.

[0114] According to some specific embodiments of the present invention, such as Figures 1-3 As shown, the fifth connector 510 and the third power chip 400 are spaced apart in the second direction. This avoids contact between the fifth connector 510 and the third power chip 400, which could affect the reliability of the electrical connection and thus ensure the effectiveness of the semiconductor power module 1.

[0115] According to some specific embodiments of the present invention, such as Figures 4-7 As shown, the semiconductor power module 1 also includes a first DC transmission terminal 600, a second DC transmission terminal 700, a third DC transmission terminal 800, and an AC transmission terminal 900.

[0116] The first DC transmission terminal 600 is connected to the first horizontal segment 111 and extends beyond the edge of the substrate 100; the second DC transmission terminal 700 is connected to the end of the third vertical segment 131 away from the fifth horizontal segment 133 and extends beyond the edge of the substrate 100; the third DC transmission terminal 800 is connected to the end of the fourth vertical segment 132 away from the fifth horizontal segment 133 and extends beyond the edge of the substrate 100; and the AC transmission terminal 900 is connected to the fourth conductive area 140 and extends beyond the edge of the substrate 100.

[0117] For example, the first DC transmission terminal 600, the second DC transmission terminal 700, and the third DC transmission terminal 800 are located on one side of the opposite sides of the substrate 100, and the AC transmission terminal 900 is located on the other side of the opposite sides of the substrate 100. In this way, the connection between AC and DC will not interfere with each other, and the electrical connection safety is improved. Furthermore, the conductive circuit between the second DC transmission terminal 700 and the AC transmission terminal 900 can form a first bridge arm, and the conductive circuit between the third DC transmission terminal 800 and the AC transmission terminal 900 can form a second bridge arm. The circuits formed by the first bridge arm and the circuits formed by the second bridge arm form inductances that cancel each other out, thereby reducing the parasitic inductance of the entire semiconductor power module 1, improving the filtering capability of the semiconductor power module 1, and reducing switching losses.

[0118] in, Figure 6 In the diagram, the dashed arrows indicate the current flow direction in one of the optional operating states of the semiconductor power module 1. It can be understood that the semiconductor power module 1 can also have other current flow directions in this operating state, such as the current flow direction on each conductive area itself. Of course, the semiconductor power module 1 can also have other current flow directions in other operating states.

[0119] According to some specific embodiments of the present invention, such as Figure 5 As shown, a first high-voltage connection portion 710 is provided at the end of the third longitudinal segment 131 away from the fifth transverse segment 133. The first high-voltage connection portion 710 is larger in the second direction than the width of the third longitudinal segment 131 and larger than the width of the second DC transmission terminal 700. The second DC transmission terminal 700 is connected to the first high-voltage connection portion 710. The width of the third longitudinal segment 131 is smaller than the width of the second DC transmission terminal 700 to reduce the size of the semiconductor power module 1 in the second direction, thereby facilitating the miniaturization of the semiconductor power module 1.

[0120] By setting the first high-voltage connection part 710, on the one hand, the connection between the third longitudinal section 131 and the second DC transmission terminal 700 can be realized, and on the other hand, the second DC transmission terminal 700 is less likely to exceed the first high-voltage connection part 710 in the second direction, thereby increasing the contact area between the second DC transmission terminal 700 and the third longitudinal section 131 and ensuring the reliability of the electrical connection between the second DC transmission terminal 700 and the third longitudinal section 131.

[0121] Furthermore, a second high-voltage connection portion 810 is provided at the end of the fourth longitudinal segment 132 furthest from the fifth transverse segment 133. The second high-voltage connection portion 810 is larger in the second direction than the width of the fourth longitudinal segment 132 and larger than the width of the third DC transmission terminal 800. The third DC transmission terminal 800 is connected to the second high-voltage connection portion 810. The width of the fourth longitudinal segment 132 is smaller than the width of the third DC transmission terminal 800 to reduce the size of the semiconductor power module 1 in the second direction, thereby facilitating the miniaturization of the semiconductor power module 1.

[0122] By providing the second high-voltage connection part 810, on the one hand, the connection between the fourth longitudinal section 132 and the third DC transmission terminal 800 can be realized; on the other hand, the third DC transmission terminal 800 is less likely to extend beyond the second high-voltage connection part 810 in the second direction, thereby increasing the contact area between the third DC transmission terminal 800 and the fourth longitudinal section 132 and ensuring the reliability of the electrical connection between the third DC transmission terminal 800 and the fourth longitudinal section 132.

[0123] According to some embodiments of the present invention, such as Figure 5 As shown, a low-voltage connection part 610 is provided on the side of the first horizontal segment 111 facing away from the second horizontal segment 112. The length of the low-voltage connection part 610 is less than the length of the first horizontal segment 111 and greater than the width of the first DC transmission terminal 600. The first DC transmission terminal 600 is connected to the low-voltage connection part 610.

[0124] The first high-voltage connection 710 and the second high-voltage connection 810 are located on opposite sides of the low-voltage connection 610 in the second direction. By making the length of the low-voltage connection 610 less than the length of the first horizontal segment 111, the low-voltage connection 610 can avoid the first high-voltage connection 710 and the second high-voltage connection 810. While ensuring a reliable connection between the low-voltage connection 610 and the second high-voltage connection 810, the size of the semiconductor power module 1 in the second direction is avoided, which is conducive to the miniaturization of the semiconductor power module 1.

[0125] By providing a low-voltage connection part 610, on the one hand, the connection between the first horizontal segment 111 and the low-voltage connection part 610 can be realized, and on the other hand, the low-voltage connection part 610 is not likely to extend beyond the low-voltage connection part 610 in the second direction, thereby ensuring the reliability of the electrical connection between the first DC transmission terminal 600 and the first horizontal segment 111.

[0126] According to some specific embodiments of the present invention, such as Figure 5As shown, the width of the second DC transmission terminal 700 is the same as the width of the third DC transmission terminal 800 and smaller than the width of the first DC transmission terminal 600. Since the second DC transmission terminal 700 and the third DC transmission terminal 800 are simultaneously connected to the third conductive area (130), the width of the first DC transmission terminal 600 can be approximately equal to the sum of the widths of the second DC transmission terminal 700 and the third DC transmission terminal 800, so as to ensure that the DC input impedance and DC output impedance are approximately the same and reduce the heat generation of the semiconductor power module 1.

[0127] According to some specific embodiments of the present invention, such as Figure 7 and Figure 8 As shown, the substrate 100 includes an insulating layer 101, a circuit layer 102, and a heat dissipation layer 103. The circuit layer 102 is connected to one side of the insulating layer 101 in the thickness direction, a first conductive region 110 and a second conductive region 120 are formed in the circuit layer 102, and the heat dissipation layer 103 is connected to the other side of the insulating layer 101 in the thickness direction.

[0128] The insulating layer 101 can be made of ceramic, such as aluminum oxide (Al2O3), aluminum nitride (AlN), or silicon nitride (Si3N4). In this way, the insulating layer 101 has good thermal conductivity, strong insulation ability, and stable chemical properties. It can not only isolate the connection between the conductive layer and the heat dissipation layer 103, but also provide a heat dissipation channel for the semiconductor power module 1.

[0129] The circuit layer 102 can be made of copper, which is etched into a first conductive region 110, a second conductive region 120, a third conductive region 130, and a fourth conductive region 140. The heat dissipation layer 103 can be made of copper, and the first DC transmission terminal 600, the second DC transmission terminal 700, the third DC transmission terminal 800, and the AC transmission terminal 900 can all be made of copper. In this way, the circuit layer 102, the heat dissipation layer 103, the first DC transmission terminal 600, the second DC transmission terminal 700, the third DC transmission terminal 800, and the AC transmission terminal 900 all have good conductivity and heat dissipation performance, and can be effectively connected to external devices.

[0130] According to some specific embodiments of the present invention, the semiconductor power module 1 further includes an insulating cover (not shown in the diagram), which is mounted on the substrate 100 and covers the first conductive region 110, the second conductive region 120, the first power chip 200, and the second power chip 300. The insulating cover can serve to insulate and protect the devices, thereby improving the safety of the electrical connections of the semiconductor power module 1.

[0131] The motor controller 2 according to an embodiment of the present invention is described below with reference to the accompanying drawings, such as... Figure 9As shown, the motor controller 2 includes a heat sink 104, a coolant channel, and a semiconductor power module 1 according to the above embodiment of the present invention. The heat sink 104 is mounted on the coolant channel, and the semiconductor power module 1 is disposed on the heat sink 104.

[0132] For example, multiple semiconductor power modules 1 are arranged along the second direction on the heat dissipation base plate 104. The multiple semiconductor power modules 1 can be connected in parallel. The bottom of each semiconductor power module 1 is welded to the heat dissipation base plate 104. The coolant channel can be a slotted water channel. The heat dissipation base plate 104 is installed on the slot of the coolant channel to dissipate heat from the semiconductor power modules 1. The design process is simple, easy to implement and convenient to operate.

[0133] In the embodiments, based on the semiconductor power module 1 provided by the above embodiments, the structure layout is uniform and the heat dissipation effect is good. The motor controller 2 can be applied to various coolant channel applications, such as series coolant channels or parallel coolant channels, which improves the application flexibility of the motor controller 2 and the stray inductance in the circuit is small when applied.

[0134] The motor controller 2 according to an embodiment of the present invention has advantages such as low stray inductance and good heat dissipation by utilizing the semiconductor power module 1 according to the above embodiment of the present invention.

[0135] The following description, with reference to the accompanying drawings, describes a vehicle according to an embodiment of the present invention. The vehicle includes an electric motor and an electric motor controller 2 according to the above embodiment of the present invention, the electric motor controller 2 being connected to the electric motor.

[0136] The vehicle according to the embodiments of the present invention has advantages such as low stray inductance and good heat dissipation by utilizing the motor controller 2 according to the above embodiments of the present invention.

[0137] The semiconductor power module 1, motor controller 2, and other components and operations of the vehicle according to embodiments of the present invention are known to those skilled in the art and will not be described in detail here.

[0138] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0139] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A semiconductor power module (1), characterized in that, include: A substrate (100) having a first direction and a second direction orthogonal to each other; A first conductive region (110) and a second conductive region (120) are spaced apart on the substrate (100). The first conductive region (110) includes a first horizontal segment (111) and a second horizontal segment (112). The second conductive region (120) includes a third horizontal segment (121) and a fourth horizontal segment (122). The first horizontal segment (111), the third horizontal segment (121), the second horizontal segment (112) and the fourth horizontal segment (122) are arranged sequentially along the first direction. The first conductive region (110) and the second conductive region (120) are used to transmit DC signals. At least one first power chip (200) and at least one second power chip (300), wherein the first power chip (200) is connected to the first horizontal segment (111) and the third horizontal segment (121) respectively, and the second power chip (300) is connected to the second horizontal segment (112) and the fourth horizontal segment (122) respectively; The first conductive region (110) further includes a first longitudinal segment (113), the first transverse segment (111) and the second transverse segment (112) both extend along the second direction, the first longitudinal segment (113) extends along the first direction and its two ends are respectively connected to the first transverse segment (111) and the second transverse segment (112); The second conductive region (120) further includes a second longitudinal segment (123), the third transverse segment (121) and the fourth transverse segment (122) both extend along the second direction, and the second longitudinal segment (123) extends along the first direction and its two ends are respectively connected to the third transverse segment (121) and the fourth transverse segment (122); The first longitudinal segment (113) and the second longitudinal segment (123) are respectively disposed adjacent to opposite sides of the substrate (100) in the second direction.

2. The semiconductor power module (1) according to claim 1, characterized in that, One end of the first longitudinal segment (113) is flush with the side of the first transverse segment (111) facing away from the second transverse segment (112), and the other end of the first longitudinal segment (113) is flush with the side of the second transverse segment (112) facing away from the first transverse segment (111). One end of the second longitudinal segment (123) is flush with the side of the third transverse segment (121) facing away from the fourth transverse segment (122), and the other end of the second longitudinal segment (123) is flush with the side of the fourth transverse segment (122) facing away from the third transverse segment (121).

3. The semiconductor power module (1) according to claim 1, characterized in that, The side of the first longitudinal segment (113) facing away from the second longitudinal segment (123) is flush with the end of the fourth transverse segment (122) away from the second longitudinal segment (123); The side of the second longitudinal segment (123) facing away from the first longitudinal segment (113) is flush with the side of the first transverse segment (111) away from the first longitudinal segment (113).

4. The semiconductor power module (1) according to claim 1, characterized in that, The first power chip (200) is mounted on the third horizontal segment (121), and the first power chip (200) is connected to the first horizontal segment (111) through the first connector (210).

5. The semiconductor power module (1) according to claim 1, characterized in that, The second power chip (300) is mounted on the fourth horizontal segment (122), and the second power chip (300) is connected to the second horizontal segment (112) via the second connector (310).

6. The semiconductor power module (1) according to claim 1, characterized in that, include: A third conductive region (130) is disposed on the substrate and spaced apart from the first conductive region (110) and the second conductive region (120), the third conductive region (130) being configured as a closed ring surrounding the first conductive region (110) and the second conductive region (120).

7. The semiconductor power module (1) according to claim 6, characterized in that, The third conductive region (130) includes a third longitudinal segment (131), a fourth longitudinal segment (132), a fifth transverse segment (133), and a sixth transverse segment (134). The third longitudinal segment (131) and the fourth longitudinal segment (132) extend along the first direction and are spaced apart along the second direction. The fifth transverse segment (133) and the sixth transverse segment (134) extend along the second direction and are spaced apart along the first direction. The third longitudinal segment (131), the fifth transverse segment (133), the fourth longitudinal segment (132), and the sixth transverse segment (134) are connected end to end in sequence. The first conductive region (110) and the second conductive region (120) are located between the third longitudinal segment (131) and the fourth longitudinal segment (132) in the second direction. The fifth transverse segment (133) is located on the side of the fourth transverse segment (122) facing away from the third transverse segment (121) in the first direction. The third conductive region (130) is used to transmit DC signals. The semiconductor power module includes at least one third power chip (400) and at least one fourth power chip (500), wherein the third power chip (400) is disposed in the fifth horizontal segment (133) and connected to the fourth horizontal segment (122), and the fourth power chip (500) is disposed in the fifth horizontal segment (133) and connected to the fourth horizontal segment (122).

8. The semiconductor power module (1) according to claim 7, characterized in that, There are multiple third power chips (400), and the multiple third power chips (400) are spaced apart along the second direction, and the multiple third power chips (400) are arranged in a row along the second direction; There are multiple fourth power chips (500), and the multiple fourth power chips (500) are spaced apart along the second direction, and the multiple fourth power chips (500) are arranged in a row along the second direction; The row containing the third power chip (400) and the row containing the fourth power chip (500) are spaced apart along the first direction; The sum of the number of the first power chip (200) and the second power chip (300) is the same as the sum of the number of the third power chip (400) and the fourth power chip (500).

9. The semiconductor power module (1) according to claim 8, characterized in that, The plurality of the third power chips (400) and the plurality of the fourth power chips (500) are arranged alternately along the second direction.

10. The semiconductor power module (1) according to claim 7, characterized in that, include: A fourth conductive region (140) is disposed on the substrate and spaced apart from the first conductive region (110), the second conductive region (120) and the third conductive region. The fourth conductive region (140) extends along the second direction and is located on the side of the fifth horizontal segment (133) opposite to the fourth horizontal segment (122) in the first direction. The third power chip (400) and the fourth power chip (500) are both connected to the fourth conductive region (140). The fourth conductive region (140) is used to transmit AC signals.

11. The semiconductor power module (1) according to claim 10, characterized in that, The third power chip (400) is connected to the fourth horizontal segment (122) via a third connector (410); The third power chip (400) is connected to the fourth conductive area (140) via the fourth connector (420).

12. The semiconductor power module (1) according to claim 11, characterized in that, The third connector (410) and the fourth connector (420) are configured as an integral piece extending along the first direction.

13. The semiconductor power module (1) according to claim 11, characterized in that, The fourth connector (420) and the fourth power chip (500) are spaced apart in the second direction.

14. The semiconductor power module (1) according to claim 10, characterized in that, The fourth power chip (500) is connected to the fourth horizontal segment via the fifth connector (510); The fourth power chip (500) is connected to the fourth conductive area (140) via the sixth connector (520).

15. The semiconductor power module (1) according to claim 14, characterized in that, The fifth connector (510) and the sixth connector (520) are configured as an integral piece extending along the first direction.

16. The semiconductor power module (1) according to claim 14, characterized in that, The fifth connector (510) and the third power chip (400) are spaced apart in the second direction.

17. The semiconductor power module (1) according to claim 10, characterized in that, include: A first DC transmission terminal (600) is connected to the first transverse segment (111) and extends beyond the edge of the substrate (100); The second DC transmission terminal (700) is connected to the end of the third longitudinal segment (131) away from the fifth transverse segment (133) and extends beyond the edge of the substrate (100); The third DC transmission terminal (800) is connected to the end of the fourth longitudinal segment (132) away from the fifth transverse segment (133) and extends beyond the edge of the substrate (100); An AC transmission terminal (900) is connected to the fourth conductive region (140) and extends beyond the edge of the substrate (100).

18. The semiconductor power module (1) according to claim 17, characterized in that, A low-voltage connection part (610) is provided on the side of the first horizontal segment (111) facing away from the second horizontal segment (112). The length of the low-voltage connection part (610) is less than the length of the first horizontal segment (111) and greater than the width of the first DC transmission terminal (600). The first DC transmission terminal (600) is connected to the low-voltage connection part (610).

19. The semiconductor power module (1) according to claim 17, characterized in that, The third longitudinal segment (131) is provided with a first high-voltage connection part (710) at one end away from the fifth transverse segment (133). The first high-voltage connection part (710) is larger in the second direction than the width of the third longitudinal segment (131) and larger than the width of the second DC transmission terminal (700). The second DC transmission terminal (700) is connected to the first high-voltage connection part (710). The fourth longitudinal segment (132) is provided with a second high-voltage connection part (810) at one end away from the fifth transverse segment (133). The second high-voltage connection part (810) is larger in the second direction than the width of the fourth longitudinal segment (132) and larger than the width of the third DC transmission terminal (800). The third DC transmission terminal (800) is connected to the second high-voltage connection part (810).

20. The semiconductor power module (1) according to any one of claims 1-19, characterized in that, The substrate (100) includes: Insulation layer (101); A circuit layer (102) is connected to one side of the insulating layer (101) in the thickness direction, and the first conductive region (110) and the second conductive region (120) are formed in the circuit layer (102). A heat dissipation layer (103) is connected to the other side of the insulation layer (101) in the thickness direction.

21. The semiconductor power module (1) according to any one of claims 1-19, characterized in that, include: An insulating cover is mounted on the substrate (100) and covers the first conductive area (110), the second conductive area (120), the first power chip (200), and the second power chip (300).

22. A motor controller (2), characterized in that, include: A heat dissipation base plate (104) and a coolant channel, wherein the heat dissipation base plate (104) is installed on the coolant channel; The semiconductor power module (1) according to any one of claims 1-21 is disposed on the heat dissipation base plate (104).

23. The motor controller (2) according to claim 22, characterized in that, The semiconductor power modules (1) are multiple and arranged along the second direction on the heat dissipation base plate (104).

24. A vehicle, characterized in that, include: Electric motor; The motor controller (2) according to claim 22 or 23 is connected to the motor.

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