Indium copper oxide target material and preparation method and application thereof

Abstract

The present invention provides an indium copper oxide target material and a preparation method and application thereof, wherein the preparation method comprises the following steps: (1) mixing indium oxide powder and copper powder to obtain a mixed powder; and (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target material. The indium copper oxide target material prepared by the present invention has a high relative density, good compactness and good uniformity, a uniform appearance color and no defects such as pores, and meets the needs of actual production.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and relates to a target material and a preparation method and application thereof, and in particular to an indium copper oxide target material and a preparation method and application thereof. Background Art

[0002] Magnetron sputtering is a vacuum film forming method in which electrons collide with argon atoms in the process of flying toward the substrate under the action of an electric field, ionizing the argon atoms to produce Ar + and new electrons, the new electrons fly to the substrate, Ar + Under the action of the electric field, it is accelerated to fly towards the target material and bombards the target surface with high energy, causing the target material to sputter. The sputtered target particles are deposited on the substrate to form a film layer.

[0003] Depending on the coating layer, different target materials can be selected.

[0004] However, with the technological advancement of the chip and display industries, the demand for sputtering targets has become increasingly higher. Currently, the demand for indium copper oxide targets is increasing, but the production and research and development of indium copper oxide targets is still in the initial stage, and there is great difficulty in firing, making it difficult to meet actual production needs.

[0005] Therefore, it is necessary to provide an indium copper oxide target material and a preparation method and application thereof. Summary of the invention

[0006] In view of the shortcomings of the prior art, the purpose of the present invention is to provide an indium copper oxide target material and a preparation method and application thereof. The indium copper oxide target material has a high relative density, good compactness and good uniformity, uniform appearance color and no defects such as pores, which meets the needs of actual production.

[0007] To achieve this object, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a method for preparing an indium copper oxide target, the preparation method comprising the following steps:

[0009] (1) mixing indium oxide powder and copper powder to obtain a mixed powder;

[0010] (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target.

[0011] Exemplarily, the mixed powder obtained in step (1) is placed in a graphite mold for hot pressing and sintering, and the present invention does not specifically limit the model of the graphite mold. The preparation method provided by the present invention is to mix indium oxide powder and copper powder, and then perform hot pressing and sintering, so that the obtained indium oxide copper target has a high relative density, good compactness and good uniformity, uniform appearance color and no defects such as pores, which meets the needs of actual production.

[0012] The preparation method of the present invention is carried out in an oxygen-free atmosphere to ensure that the copper in the obtained indium copper oxide target exists in the form of metal rather than copper oxide.

[0013] Preferably, the mixing method in step (1) comprises dry ball milling. The present invention does not specifically limit the parameters of the dry ball milling, as long as the indium oxide powder and the copper powder can be uniformly mixed.

[0014] Preferably, the hot pressing sintering in step (2) includes sequentially performing a first heating, a first pressurization, a first pressure holding, a second pressurization, a second pressure holding, a third pressurization, a third pressure holding, a first cooling, and a second cooling;

[0015] Preferably, the first pressurization rate is less than the second pressurization rate and less than the third pressurization rate.

[0016] Preferably, the indium copper oxide target is obtained by naturally releasing the pressure after the second cooling.

[0017] Preferably, the first heating rate is 8-12°C / min, for example, 8°C / min, 9°C / min, 10°C / min, 11°C / min or 12°C / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0018] If the first heating rate is too slow, the structure of the sintered product will be loose and the relative density will not meet the use requirements; if the first heating rate is too fast, a large number of pores will be generated on the surface of the target material, making it unusable.

[0019] Preferably, the endpoint temperature of the first heating is 920-940°C, for example, 920°C, 925°C, 930°C, 935°C or 940°C, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0020] If the endpoint temperature of the first heating is too low, the target material will have poor uniformity, uneven color, insufficient compactness, and low relative density; if the endpoint temperature of the first heating is too high, the target material will be severely deformed and unusable.

[0021] Preferably, the first pressurization rate is 0.2-0.4 MPa / min, for example, 0.2 MPa / min, 0.3 MPa / min or 0.4 MPa / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0022] Preferably, the second pressurization rate is 0.4-0.6 MPa / min, for example, 0.4 MPa / min, 0.5 MPa / min or 0.6 MPa / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0023] Preferably, the third pressurization rate is 0.8-1.2 MPa / min, for example, it can be 0.8 MPa / min, 0.9 MPa / min, 1 MPa / min, 1.1 MPa / min or 1.2 MPa / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0024] Preferably, the first holding pressure is 10-15 MPa, for example, 10 MPa, 11 MPa, 12 MPa, 13 MPa, 14 MPa or 15 MPa, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0025] Preferably, the first pressure-maintaining time is 0.4-0.6 h, for example, 0.4 h, 0.5 h or 0.6 h, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0026] Preferably, the second holding pressure is 20-25 MPa, for example, 20 MPa, 21 MPa, 22 MPa, 23 MPa, 24 MPa or 25 MPa, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0027] Preferably, the second pressure holding time is 0.4-0.6h, for example, 0.4h, 0.5h or 0.6h, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0028] Preferably, the third holding pressure is 34-36 MPa, for example, 34 MPa, 34.5 MPa, 35 MPa, 35.5 MPa or 36 MPa, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0029] Preferably, the third pressure holding time is 3.5-4.5h, for example, it can be 3.5h, 3.6h, 3.8h, 4h, 4.2h or 4.5h, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0030] Preferably, the first cooling is pressure-maintaining cooling.

[0031] Preferably, the endpoint temperature of the first cooling is 280-320°C, for example, 280°C, 290°C, 300°C, 310°C or 320°C, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0032] Preferably, the first cooling rate is 1.8-2.2°C / min, for example, 1.8°C / min, 1.9°C / min, 2°C / min, 2.1°C / min or 2.2°C / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0033] If the first cooling rate is too slow, the sintering furnace will be used for a long time and the energy consumption will be too high; if the first cooling rate is too fast, the target material will be deformed and cracked due to the large temperature difference.

[0034] Preferably, the second cooling is natural cooling.

[0035] Preferably, the endpoint temperature of the second cooling is 80-120°C, for example, 80°C, 90°C, 100°C, 110°C or 120°C, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0036] Preferably, the particle size D50 of the indium oxide powder in step (1) is 0.3-5 μm, for example, it can be 0.3 μm, 0.5 μm, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 4 μm or 5 μm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0037] Preferably, the particle size D50 of the copper powder in step (1) is 45-55 μm, for example, 45 μm, 48 μm, 50 μm, 52 μm, 54 μm or 55 μm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0038] Preferably, based on the total mass percentage of indium oxide powder and copper powder being 100wt%, the mass percentage of the indium oxide powder is 82-85wt%, and the mass percentage of the copper powder is 15-18wt%;

[0039] The mass percentage of the indium oxide powder is 82-85wt%, for example, 82wt%, 83wt%, 84wt% or 85wt%, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0040] The mass percentage of the copper powder is 15-18wt%, for example, 15wt%, 16wt%, 17wt% or 18wt%, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0041] Preferably, the hot pressing sintering in step (2) is bidirectional hot pressing sintering.

[0042] The bidirectional hot pressing sintering described in the present invention refers to applying uniform pressure to the blank in the mold from both the top and the bottom at the same time.

[0043] As a preferred technical solution of the preparation method described in the first aspect of the present invention, the preparation method comprises the following steps:

[0044] (1) mixing indium oxide powder and copper powder to obtain a mixed powder;

[0045] The particle size D50 of the indium oxide powder is 0.3-5 μm;

[0046] The particle size D50 of the copper powder is 45-55 μm;

[0047] (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target;

[0048] The hot pressing sintering includes the first heating, the first pressurization, the first pressure holding, the second pressurization, the second pressure holding, the third pressurization, the third pressure holding, the first cooling and the second cooling in sequence;

[0049] The heating rate of the first heating is 8-12°C / min, and the terminal temperature is 920-940°C;

[0050] The first pressurization rate is 0.2-0.4 MPa / min, the first pressure holding pressure is 10-15 MPa, and the first pressure holding time is 0.4-0.6 h;

[0051] The second pressurization rate is 0.4-0.6 MPa / min, the second pressure holding pressure is 20-25 MPa, and the second pressure holding time is 0.4-0.6 h;

[0052] The rate of the third pressurization is 0.8-1.2 MPa / min, the pressure of the third pressure holding is 34-36 MPa, and the time of the third pressure holding is 3.5-4.5 h;

[0053] The first cooling is pressure-maintaining cooling, and the end temperature is 280-320°C;

[0054] The second cooling is natural cooling, and the terminal temperature of the second cooling is 80-120°C.

[0055] In a second aspect, the present invention provides an indium copper oxide target material, which is obtained by the preparation method described in the first aspect.

[0056] In a third aspect, the present invention provides an application of the indium copper oxide target material as described in the second aspect, wherein the indium copper oxide target material is used for magnetron sputtering.

[0057] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0058] Compared with the prior art, the present invention has the following beneficial effects:

[0059] The preparation method provided by the present invention comprises mixing indium oxide powder and copper powder and then performing hot pressing and sintering, so that the obtained indium oxide copper target has high relative density, good compactness and good uniformity, uniform appearance color and no defects such as pores, which meets the needs of actual production. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] Figure 1 This is the element distribution diagram of the indium copper oxide target obtained in Example 1. DETAILED DESCRIPTION

[0061] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0062] In order to clearly illustrate the technical solution of the present invention, the purity of the indium oxide powder used in the specific implementation manner of the present invention is ≥99.99wt%, and the mass is 1628g; the purity of the copper powder used is ≥99.9wt%, and the mass is 372g; the above-mentioned limitations on indium oxide powder and copper powder are only for clearly illustrating the technical solution of the present invention and are not regarded as further limitations of the present invention.

[0063] In order to clearly illustrate the technical solution of the present invention, the single piece area of ​​the indium copper oxide target obtained in the specific embodiment of the present invention is 375 cm 2 , with a thickness of 7.15 mm; the above-mentioned limitation on indium oxide powder and copper powder is only for the purpose of clearly illustrating the technical solution of the present invention and is not regarded as a further limitation of the present invention.

[0064] Example 1

[0065] This embodiment provides a method for preparing an indium copper oxide target, the preparation method comprising the following steps:

[0066] (1) mixing indium oxide powder and copper powder to obtain a mixed powder; and then placing the mixed powder into a graphite mold for hot pressing sintering in step (2);

[0067] The particle size D50 of the indium oxide powder is 3 μm;

[0068] The particle size D50 of the copper powder is 50 μm;

[0069] (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target;

[0070] The hot pressing sintering includes the first heating, the first pressurization, the first pressure maintenance, the second pressurization, the second pressure maintenance, the third pressurization, the third pressure maintenance, the first cooling, the second cooling and the natural pressure release in sequence;

[0071] The heating rate of the first heating is 8°C / min, and the end temperature is 920°C;

[0072] The first pressurization rate is 0.2 MPa / min, the first pressure-holding pressure is 10 MPa, and the first pressure-holding time is 0.4 h;

[0073] The second pressurization rate is 0.4 MPa / min, the second pressure holding pressure is 20 MPa, and the second pressure holding time is 0.4 h;

[0074] The rate of the third pressurization is 0.8 MPa / min, the pressure of the third pressure-maintaining is 34 MPa, and the time of the third pressure-maintaining is 3.5 h;

[0075] The first cooling is pressure-maintaining cooling, the cooling rate is 1.8°C / min, and the end temperature is 280°C;

[0076] The second cooling is natural cooling, and the end point temperature of the second cooling is 80°C.

[0077] The elemental composition of the indium copper oxide target obtained in this embodiment is as follows: Figure 1 Said by Figure 1 It can be seen that the copper in the indium copper oxide target obtained in this embodiment exists in the form of metal rather than copper oxide.

[0078] Example 2

[0079] This embodiment provides a method for preparing an indium copper oxide target, the preparation method comprising the following steps:

[0080] (1) mixing indium oxide powder and copper powder to obtain a mixed powder; and then placing the mixed powder into a graphite mold for hot pressing sintering in step (2);

[0081] The particle size D50 of the indium oxide powder is 3 μm;

[0082] The particle size D50 of the copper powder is 45 μm;

[0083] (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target;

[0084] The hot pressing sintering includes the first heating, the first pressurization, the first pressure maintenance, the second pressurization, the second pressure maintenance, the third pressurization, the third pressure maintenance, the first cooling, the second cooling and the natural pressure release in sequence;

[0085] The heating rate of the first heating is 10°C / min, and the end temperature is 930°C;

[0086] The first pressurization rate is 0.3 MPa / min, the first pressure-holding pressure is 12.5 MPa, and the first pressure-holding time is 0.5 h;

[0087] The second pressurization rate is 0.5 MPa / min, the second pressure holding pressure is 22.5 MPa, and the second pressure holding time is 0.5 h;

[0088] The rate of the third pressurization is 1.0 MPa / min, the pressure of the third pressure holding is 35 MPa, and the time of the third pressure holding is 4 hours;

[0089] The first cooling is pressure-maintaining cooling, the cooling rate is 2.0°C / min, and the end temperature is 300°C;

[0090] The second cooling is natural cooling, and the end point temperature of the second cooling is 100°C.

[0091] Example 3

[0092] This embodiment provides a method for preparing an indium copper oxide target, the preparation method comprising the following steps:

[0093] (1) mixing indium oxide powder and copper powder to obtain a mixed powder; and then placing the mixed powder into a graphite mold for hot pressing sintering in step (2);

[0094] The particle size D50 of the indium oxide powder is 3 μm;

[0095] The particle size D50 of the copper powder is 55 μm;

[0096] (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target;

[0097] The hot pressing sintering includes the first heating, the first pressurization, the first pressure maintenance, the second pressurization, the second pressure maintenance, the third pressurization, the third pressure maintenance, the first cooling, the second cooling and the natural pressure release in sequence;

[0098] The heating rate of the first heating is 12°C / min, and the end temperature is 940°C;

[0099] The first pressurization rate is 0.4 MPa / min, the first pressure-holding pressure is 15 MPa, and the first pressure-holding time is 0.6 h;

[0100] The second pressurization rate is 0.6 MPa / min, the second pressure holding pressure is 25 MPa, and the second pressure holding time is 0.6 h;

[0101] The rate of the third pressurization is 1.2 MPa / min, the pressure of the third pressure holding is 36 MPa, and the time of the third pressure holding is 4.5 h;

[0102] The first cooling is pressure-maintaining cooling, the cooling rate is 2.2°C / min, and the end temperature is 320°C;

[0103] The second cooling is natural cooling, and the end point temperature of the second cooling is 120°C.

[0104] Example 4

[0105] This embodiment provides a method for preparing an indium copper oxide target material, which is the same as that of Embodiment 1 except that the hot pressing sintering adopts the following steps:

[0106] The hot pressing sintering in this embodiment includes the first heating, the second pressurization, the second pressure maintenance, the third pressurization, the third pressure maintenance, the first cooling, the second cooling and the natural pressure release in sequence;

[0107] The heating rate of the first heating is 10°C / min, and the end temperature is 930°C;

[0108] The second pressurization rate is 0.5 MPa / min, the second pressure holding pressure is 22 MPa, and the second pressure holding time is 0.5 h;

[0109] The rate of the third pressurization is 1 MPa / min, the pressure of the third pressure-maintaining is 35 MPa, and the time of the third pressure-maintaining is 4 hours;

[0110] The first cooling is pressure-maintaining cooling, the cooling rate is 2°C / min, and the end temperature is 300°C;

[0111] The second cooling is natural cooling, and the end point temperature of the second cooling is 100°C.

[0112] Example 5

[0113] This embodiment provides a method for preparing an indium copper oxide target material, which is the same as that of Embodiment 1 except that the hot pressing sintering adopts the following steps:

[0114] The hot pressing sintering includes the first heating, the first pressurization, the first pressure maintenance, the third pressurization, the third pressure maintenance, the first cooling, the second cooling and the natural pressure release in sequence;

[0115] The heating rate of the first heating is 10°C / min, and the end temperature is 930°C;

[0116] The first pressurization rate is 0.3 MPa / min, the first pressure-holding pressure is 12 MPa, and the first pressure-holding time is 0.5 h;

[0117] The rate of the third pressurization is 1 MPa / min, the pressure of the third pressure-maintaining is 35 MPa, and the time of the third pressure-maintaining is 4 hours;

[0118] The first cooling is pressure-maintaining cooling, the cooling rate is 2°C / min, and the end temperature is 300°C;

[0119] The second cooling is natural cooling, and the end point temperature of the second cooling is 100°C.

[0120] Example 6

[0121] This embodiment provides a method for preparing an indium copper oxide target material, which is the same as that of Embodiment 1 except that the hot pressing sintering adopts the following steps:

[0122] The hot pressing sintering includes sequentially performing first heating, first pressurization, first pressure maintenance, second pressurization, second pressure maintenance, first cooling, second cooling and natural pressure release;

[0123] The heating rate of the first heating is 10°C / min, and the end temperature is 930°C;

[0124] The first pressurization rate is 0.3 MPa / min, the first pressure-holding pressure is 12 MPa, and the first pressure-holding time is 0.5 h;

[0125] The second pressurization rate is 0.5 MPa / min, the second pressure holding pressure is 22 MPa, and the second pressure holding time is 0.5 h;

[0126] The first cooling is pressure-maintaining cooling, the cooling rate is 2°C / min, and the end temperature is 300°C;

[0127] The second cooling is natural cooling, and the end point temperature of the second cooling is 100°C.

[0128] Example 7

[0129] This embodiment provides a method for preparing an indium copper oxide target, the preparation method comprising the following steps:

[0130] (1) mixing indium oxide powder and copper powder to obtain a mixed powder; and then placing the mixed powder into a graphite mold for hot pressing sintering in step (2);

[0131] The particle size D50 of the indium oxide powder is 3 μm;

[0132] The particle size D50 of the copper powder is 50 μm;

[0133] (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target;

[0134] The hot pressing sintering includes the first heating, the first pressurization, the first pressure maintenance, the second pressurization, the second pressure maintenance, the third pressurization, the third pressure maintenance, the first cooling, the second cooling and the natural pressure release in sequence;

[0135] The heating rate of the first heating is 10°C / min, and the end temperature is 930°C;

[0136] The first pressurization rate is 1 MPa / min, the first pressure-maintaining pressure is 12 MPa, and the first pressure-maintaining time is 0.5 h;

[0137] The second pressurization rate is 0.5 MPa / min, the second pressure holding pressure is 22 MPa, and the second pressure holding time is 0.5 h;

[0138] The rate of the third pressurization is 0.3 MPa / min, the pressure of the third pressure holding is 35 MPa, and the time of the third pressure holding is 4 hours;

[0139] The first cooling is pressure-maintaining cooling, the cooling rate is 2°C / min, and the end temperature is 300°C;

[0140] The second cooling is natural cooling, and the end point temperature of the second cooling is 100°C.

[0141] Example 8

[0142] This embodiment provides a method for preparing an indium copper oxide target material, which is the same as that of Embodiment 1 except that the first cooling step is natural cooling.

[0143] The density, relative density and appearance of the indium copper oxide targets obtained in Examples 1-8 are shown in Table 1.

[0144] Table 1

[0145]

[0146] In Examples 9-10, except that the heating rate of the first heating is changed as shown in Table 2, the rest is the same as Example 1.

[0147] Table 2

[0148]

[0149] In Examples 11-12, except that the end temperature of the first heating is changed as shown in Table 3, the rest is the same as Example 1.

[0150] Table 3

[0151]

[0152] In summary, the preparation method provided by the present invention mixes indium oxide powder and copper powder and then performs hot pressing and sintering, so that the obtained indium oxide copper target has a high relative density, good density and good uniformity, uniform appearance color and no defects such as pores, which meets the needs of actual production.

[0153] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing an indium copper oxide target, characterized in that: The preparation method comprises the following steps: (1) mixing indium oxide powder and copper powder to obtain a mixed powder; (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target; The hot pressing sintering in step (2) includes sequentially performing a first heating, a first pressurization, a first pressure holding, a second pressurization, a second pressure holding, a third pressurization, a third pressure holding, a first cooling, and a second cooling; The heating rate of the first heating is 8-12°C / min, and the terminal temperature is 920-940°C; The first pressurization rate is 0.2-0.4 MPa / min, the second pressurization rate is 0.4-0.6 MPa / min, the third pressurization rate is 0.8-1.2 MPa / min, and the first pressurization rate is less than the second pressurization rate and less than the third pressurization rate; The first pressure holding pressure is 10-15 MPa and the time is 0.4-0.6 h; The second pressure holding pressure is 20-25 MPa and the time is 0.4-0.6 h; The third pressure holding pressure is 34-36MPa and the time is 3.5-4.5h; The first cooling is pressure-maintaining cooling, and the end temperature is 280-320°C; the second cooling is natural cooling, and the end temperature is 80-120°C; The hot pressing sintering in step (2) is bidirectional hot pressing sintering.

2. The preparation method according to claim 1, characterized in that: The particle size D50 of the indium oxide powder in step (1) is 0.3-5 μm.

3. The preparation method according to claim 1, characterized in that: The particle size D50 of the copper powder in step (1) is 45-55 μm.

4. The preparation method according to claim 1, characterized in that: Taking the total mass percentage of the indium oxide powder and the copper powder as 100wt%, the mass percentage of the indium oxide powder is 82-85wt%, and the mass percentage of the copper powder is 15-18wt%.

5. The preparation method according to claim 1, characterized in that: The preparation method comprises the following steps: (1) mixing indium oxide powder and copper powder to obtain a mixed powder; The particle size D50 of the indium oxide powder is 0.3-5 μm; The particle size D50 of the copper powder is 45-55 μm; (2) hot pressing and sintering the mixed powder obtained in step (1) to obtain the indium copper oxide target; The hot pressing sintering includes the first heating, the first pressurization, the first pressure holding, the second pressurization, the second pressure holding, the third pressurization, the third pressure holding, the first cooling and the second cooling in sequence; The heating rate of the first heating is 8-12°C / min, and the terminal temperature is 920-940°C; The first pressurization rate is 0.2-0.4 MPa / min, the first pressure holding pressure is 10-15 MPa, and the first pressure holding time is 0.4-0.6 h; The second pressurization rate is 0.4-0.6 MPa / min, the second pressure holding pressure is 20-25 MPa, and the second pressure holding time is 0.4-0.6 h; The rate of the third pressurization is 0.8-1.2 MPa / min, the pressure of the third pressure holding is 34-36 MPa, and the time of the third pressure holding is 3.5-4.5 h; The first cooling is pressure-maintaining cooling, and the terminal temperature is 280-320°C; The second cooling is natural cooling, and the terminal temperature of the second cooling is 80-120°C.

6. An indium copper oxide target, characterized in that: The indium copper oxide target is obtained by the preparation method according to any one of claims 1 to 5.

7. An application of the indium copper oxide target material as claimed in claim 6, characterized in that: The indium copper oxide target is used for magnetron sputtering.

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