Film forming method and film forming apparatus

Abstract

The present application relates to the technical field of semiconductor device manufacturing, and more particularly to a film forming method and a film forming device. The present application provides a film forming method, comprising the following steps: moving a wafer into a chamber, judging whether a certain thickness of a specified film as a pre-coating layer exists in the chamber, if yes, entering the next step; introducing a chemical source gas to deposit a buffer layer above the pre-coating layer; introducing a precursor to deposit the specified film above the buffer layer, and introducing a reducing gas to reduce the residual precursor; wherein the specified film is a Ti-containing metal film, and the precursor is an inorganic Ti-containing material. By improving the process, precisely controlling the temperature and optimizing the wafer entry time, the present application can cover the particles in the chamber, effectively control the diffusion and pollution of the particles in the chamber, improve the film quality, effectively avoid potential equipment problems, and thus improve the production efficiency and product quality.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor device manufacturing, and more particularly to a film forming method and a film forming device. BACKGROUND

[0002] With the development of microelectronic and deep sub-micron chip technology, the size of devices and materials is required to be reduced, and the aspect ratio in the device is continuously increased, so that the thickness of the used material is reduced to the order of several nanometers. ALD (Atomic layer deposition) is a method of plating materials on the surface of a substrate in the form of a single-atom film layer by layer. Compared with other deposition methods, ALD has excellent control ability over the composition and thickness of the thin film, and the prepared thin film has good conformality, high purity and uniformity, and therefore is favored in the field of semiconductor material preparation.

[0003] In the manufacturing process of semiconductor devices, a metal film such as a TiN (Titanium Nitride) film is usually formed on a semiconductor wafer by a method such as atomic layer deposition (ALD). Before the wafer is coated, a pre-coating step is performed on the surface of the chamber to form a TiN thin film on the surface of the chamber. Through this pre-coating step, the particles adhered to the surface of the chamber can be effectively prevented from flying to the wafer.

[0004] However, due to chamber cooling and other reasons, the TiN thin film covering the surface of the chamber may have cracks. These cracks may hide TiN molecules and Ti atoms that are not nitrided, and other particles. During the process, these particles may fly to the surface of the wafer, causing the problem of excessive particles on the surface of the wafer.

[0005] Currently, solving the existing metal contamination or excessive particle problem of the TiN chamber requires a long time, and the cost of the thermal ALD chamber process without using a remote plasma source (RPS) cleaning is very high.

[0006] Therefore, preventing the wafer from being contaminated by metal and having excessive particles has become a key problem that needs to be studied. In the prior art, a method of coating the chamber wall is adopted, which can effectively prevent the particles not adsorbed on the chamber wall from flying to the surface of the wafer in the chamber, thereby avoiding the problems of metal contamination and excessive particles. In addition, this method can also prolong the service life of the reaction chamber of the chamber.

[0007] Chinese invention patent CN109423625B discloses a film forming method, which first deposits 12000 cycles of TiN as a pre-coating layer. Then, the temperature is reduced to 200℃. Then, SiH4 is introduced to form a-Si on the surface of TiN to cover the process kit surface and particles in the TiN cracks in the chamber. Next, the wafer is moved into the chamber and at least 1 cycle of Cl-free TiSiN film is deposited using TDMAT (tetra dimethyl amine titanium), NH3 and SiH4.

[0008] The above technical solution has the following problems:

[0009] 1) In the process of using TDMAT as a titanium source, since it is an organic metal compound containing carbon elements, C element pollution may be introduced during deposition, which may affect the performance of TiSiN or TiN film;

[0010] 2) The use of TiCl4 and TDMAT two Ti-containing precursors for deposition will increase the production cost;

[0011] 3) TDMAT is a chlorine-free titanium source, which is an organic metal compound with a relatively low decomposition temperature, and needs to be deposited at a temperature of 200℃. If the temperature is reduced too fast or the temperature control is not proper, it may cause the problem of TiN film cracking to be aggravated and the TiN film in the chamber to be peeled off, and has a great influence on the life of the heating disc;

[0012] 4) In the deposition process, since the wafer cannot be moved into the chamber in advance, a relatively thick TiN film is deposited on the heating disc, which may affect the subsequent process and reduce the life of the vacuum chuck.

[0013] In summary, the above technical solution has multiple problems to be solved. In order to improve production efficiency and reduce cost, the existing technical solution needs to be improved and perfected. SUMMARY

[0014] The purpose of the present application is to provide a film forming method and a film forming device to solve the problem of metal contamination and excessive particles caused by the particles in the semiconductor chamber splashing onto the wafer surface in the prior art.

[0015] In order to achieve the above purpose, the present application provides a film forming method, comprising the following steps:

[0016] moving the wafer into the chamber, judging whether a certain thickness of the specified film as a pre-coating layer exists in the chamber, if it exists, entering the next step;

[0017] introducing a chemical source gas to deposit a buffer layer above the pre-coating layer;

[0018] passing a precursor, depositing a prescribed film above the buffer layer, and passing a reducing gas to reduce the residual precursor;

[0019] The prescribed film is a Ti-containing metal film, and the precursor is an inorganic Ti-containing material.

[0020] In some embodiments, the judging whether the prescribed film with a certain thickness as a pre-coating layer exists in the chamber further comprises:

[0021] If the pre-coating layer does not exist, depositing the prescribed film with a certain thickness as the pre-coating layer.

[0022] In some embodiments, the depositing the prescribed film with a certain thickness as the pre-coating layer further comprises the following steps:

[0023] passing a precursor to make the precursor adsorbed on the surface of the chamber;

[0024] passing a purge gas to purge the excess precursor in the chamber;

[0025] passing a reaction gas to react with the precursor adsorbed on the surface of the chamber to generate the prescribed film;

[0026] passing a purge gas to purge the excess reaction gas in the chamber.

[0027] In some embodiments, the depositing the buffer layer above the pre-coating layer further comprises the following steps:

[0028] passing a chemical source gas to form the buffer layer above the pre-coating layer;

[0029] passing a purge gas to purge the excess chemical source gas in the chamber.

[0030] In some embodiments, the depositing the prescribed film above the buffer layer further comprises the following steps:

[0031] passing a precursor to make the precursor adsorbed on the surface of the buffer layer;

[0032] passing a purge gas to purge the excess precursor in the chamber;

[0033] passing a reaction gas to react with the precursor adsorbed on the surface of the buffer layer to generate the prescribed film;

[0034] passing a purge gas to purge the excess reaction gas in the chamber.

[0035] In some embodiments, the depositing the buffer layer above the pre-coating layer further comprises the following steps:

[0036] passing a reducing gas to reduce the residual precursor.

[0037] In some embodiments, the reducing gas is H2.

[0038] In some embodiments, the purge gas comprises nitrogen and / or inert gas.

[0039] In some embodiments, the reaction gas is NH3.

[0040] In some embodiments, the buffer layer is an amorphous silicon thin film, and the chemical source gas is dichlorosilane.

[0041] In some embodiments, the deposition of a predetermined thin film as a pre-coating layer is performed for at least 10,000 cycles.

[0042] In some embodiments, the deposition of a buffer layer on the pre-coating layer is performed for at least 100 cycles.

[0043] In some embodiments, the deposition of a predetermined thin film on the buffer layer is performed by introducing a precursor, and the residual precursor is reduced by introducing a reducing gas, for at least 10 cycles.

[0044] In some embodiments, the process temperature in the chamber is maintained in the same temperature range.

[0045] To achieve the above object, the present application provides a film forming apparatus, comprising:

[0046] a process chamber, in which a wafer carrier is arranged to load a wafer;

[0047] a first gas supply unit for introducing a chemical source gas into the process chamber;

[0048] a second gas supply unit for introducing a precursor into the process chamber;

[0049] a third gas supply unit for introducing a reducing gas into the process chamber;

[0050] a fourth gas supply unit for introducing a reaction gas into the process chamber;

[0051] a fifth gas supply unit for introducing a purge gas into the process chamber;

[0052] a controller for outputting control signals to control the process chamber, the first gas supply unit, the second gas supply unit, the third gas supply unit, the fourth gas supply unit and the fifth gas supply unit to implement any one of the film forming methods described above.

[0053] The present application provides a film forming method and a film forming device, which are suitable for chambers with metal contamination problems and chambers with poor particles, can cover the particles in the chamber, effectively control the diffusion and contamination of the particles in the chamber, improve the film quality, effectively avoid potential equipment problems, and improve the production efficiency and product quality by improving the process, accurate temperature control and optimizing the wafer entering time. BRIEF DESCRIPTION OF DRAWINGS

[0054] The above and other features, aspects and advantages of the present application will become more apparent by reference to the following Description and appended claims in conjunction with the accompanying drawings in which use of the same number of reference numerals

[0055] Wherein:

[0056] Figure 1 A film forming method step diagram according to an embodiment of the present application is disclosed;

[0057] Figure 2 A chamber coating schematic diagram with a pre-coating layer according to an embodiment of the present application is disclosed;

[0058] Figure 3 A chamber coating schematic diagram without a pre-coating layer according to an embodiment of the present application is disclosed;

[0059] Figure 4 A process schematic diagram of a film forming method according to an embodiment of the present application is disclosed. DETAILED DESCRIPTION

[0060] In order to make the purpose, technical scheme and advantages of the present application more clear, the present application is further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not used to limit the present application.

[0061] Figure 1 A film forming method step diagram according to an embodiment of the present application is disclosed, as shown in the figure, the film forming method provided by the present application comprises the following steps: Figure 1

[0062] Step S1, move the wafer into the chamber, judge whether there is a certain thickness of the specified film as a pre-coating layer in the chamber, if yes, go to step S2;

[0063] Step S2, introduce chemical source gas, deposit a buffer layer above the pre-coating layer;

[0064] Step S3, introduce a precursor, deposit a specified film above the buffer layer, introduce a reducing gas to reduce the residual precursor and reduce the chlorine content.

[0065] ​In the embodiment, the specified film is a Ti-containing metal film, and the precursor is an inorganic Ti-containing material.

[0066] It should be noted that the selection and use of the precursor need to be determined according to the specific preparation conditions and material requirements. Different precursors have different chemical properties and reactivity, and therefore need to be selected and optimized according to the actual situation in practical application.

[0067] Further, the Ti-containing metal film can be a TiN film, and the precursor can be TiCl4.

[0068] The steps will be described in detail below. It should be understood that the above technical features of the present application and the technical features specifically described below (such as the embodiments) can be combined with each other and associated with each other within the scope of the present application, thereby forming a preferred technical solution.

[0069] Step S1, move the wafer into the chamber, and determine whether a certain thickness of the specified film exists as a pre-coating layer in the chamber. If yes, go to step S2.

[0070] In the prior art, a coating is used to solve the problem of metal contamination on the surface of the heating plate, and therefore, the film is deposited on the surface of the heating plate before the wafer is moved into the chamber. However, the deposition of a relatively thick TiN film on the heating plate can adversely affect the subsequent process and reduce the service life of the vacuum chuck.

[0071] In the embodiment, since the ceramic material is used for the heating plate, the problem of metal contamination does not occur, and therefore, the wafer can be moved into the chamber in advance before the TiN pre-coating layer, and the film growth on the surface of the heating plate is blocked by the wafer as much as possible. In this way, the heating plate and the vacuum chuck on the heating plate can be effectively protected, the influence on the subsequent process can be avoided, and the smooth progress of the process can be ensured.

[0072] Figure 2 A schematic diagram of the coating of the chamber in which the pre-coating layer already exists according to an embodiment of the present application is disclosed, as shown in Figure 2 If a certain thickness of the TiN film exists on the surface of the chamber, go to step S2 to start depositing the buffer layer.

[0073] Figure 3 A schematic diagram of the coating of the chamber in which the pre-coating layer does not exist according to an embodiment of the present application is disclosed, as shown in Figure 3 If the pre-coating layer does not exist, deposit a certain thickness of the specified film as a pre-coating layer on the surface of the chamber.

[0074] The step of depositing a certain thickness of the specified film as a pre-coating layer further comprises the following steps:

[0075] Step S11, introducing a precursor so that the precursor is adsorbed on the surface of the chamber;

[0076] Step S12, introducing a purge gas to purge the excess precursor in the chamber;

[0077] Step S13, introducing a reaction gas to react with the precursor adsorbed on the surface of the chamber to form a prescribed film;

[0078] Step S14, introducing a purge gas to purge the excess reaction gas in the chamber.

[0079] In the embodiment, the precursor is TiCl4, the prescribed film is a TiN film, and the reaction gas is NH3.

[0080] The purge gas includes nitrogen and / or an inert gas. Nitrogen is a colorless, odorless, nontoxic gas with relatively stable chemical properties, and an inert gas is also a commonly used purge gas. It is a gas with extremely unreactive chemical properties, such as argon and helium.

[0081] In the embodiment, the purge gas is Ar.

[0082] If there is already a TiN film of sufficient thickness in the chamber, this step is not needed.

[0083] Figure 4 A process flow diagram of a film forming method according to an embodiment of the present application is disclosed, as shown in FIG. 1. In the embodiment, in the step S1, a prescribed film of a certain thickness is deposited as a pre-coating layer, and the corresponding cycle period is at least 10,000 cycles. Figure 4

[0084] Step S2, introducing a chemical source gas to deposit a buffer layer above the pre-coating layer.

[0085] Further, the step of depositing a buffer layer above the pre-coating layer further includes the following steps:

[0086] Step S21, introducing a chemical source gas to form a buffer layer above the pre-coating layer;

[0087] Step S22, introducing a purge gas to purge the excess chemical source gas in the chamber.

[0088] In the embodiment, the buffer layer is an amorphous silicon (a-Si) film, the chemical source gas is dichlorosilane (DCS) or silane, the purge gas is Ar, and the pre-coating layer is a TiN film.

[0089] Dichlorosilane (DCS) or silane is used as a chemical source gas to provide silicon elements for forming a-Si (amorphous silicon).

[0090] ​Dichlorosilane, also known as dichlorosilane, is a colorless, toxic gas. It has applications in many chemical reactions, such as being used as a silicon source gas in semiconductor manufacturing.

[0091] Silanes are a collective term for a series of compounds, including silanes (SiH4), disilanes (Si2H6), and some more advanced silane compounds. Silanes have applications in many chemical reactions; for example, they are used as silicon source gases in semiconductor manufacturing.

[0092] Both dichlorosilane and silanes are important chemical source gases. They play a crucial role in chemical reactions.

[0093] Furthermore, step S22 also includes:

[0094] A reducing gas is introduced to reduce the residual precursor and reduce the chlorine content.

[0095] In this embodiment, the reducing gas is H2, and the precursor is TiCl4. The reducing gas H2 is introduced to reduce the residual precursor TiCl4 and reduce the chlorine content.

[0096] like Figure 4 As shown, in this embodiment, step S2, depositing a buffer layer on top of the pre-coating layer, corresponds to a cycle of at least 100 cycles.

[0097] In this embodiment, the a-Si layer serves as a buffer layer, effectively covering cracks and particles and preventing them from scattering onto the wafer or heating pad surface. Furthermore, by employing the a-Si layer as a buffer layer, the size of the TiN grains grown in the subsequent step S3 is reduced, thereby extending the time before spalling occurs.

[0098] Furthermore, as a preferred embodiment, the present invention can generate a-Si by reacting TiN with DCS, and then introducing H2 to eliminate Cl. This method does not require an additional SiH4 gas pipeline, thus making it more suitable for existing semiconductor equipment.

[0099] Step S3: Introduce the precursor, deposit a specified thin film on top of the buffer layer, and introduce reducing gas to reduce the residual precursor and reduce the chlorine content.

[0100] Furthermore, the introduction of the precursor and the deposition of a predetermined thin film over the buffer layer further includes the following steps:

[0101] Step S31: Introduce the precursor so that it adheres to the surface of the buffer layer.

[0102] Step S32: Introduce purging gas to purge excess precursors from the chamber;

[0103] Step S33, introducing a reaction gas to react with the precursor adsorbed on the surface of the buffer layer to form a predetermined thin film;

[0104] Step S34, introducing a purge gas to purge the excess reaction gas in the chamber.

[0105] In this embodiment, the precursor is TiCl4, the predetermined thin film is a TiN thin film, the reaction gas is NH3, the purge gas is Ar, and the buffer layer is an amorphous silicon (a-Si) thin film.

[0106] When depositing a low-Cl-content TiN layer, TiCl4 is used instead of TDMAT as the Ti source, and H2 is used to remove Cl elements.

[0107] Compared with the prior art, one advantage of the present application is that TDMAT is not required. This not only reduces costs, but also avoids the pollution of the chamber caused by the C element in TDMAT.

[0108] Furthermore, the film forming method proposed by the present application maintains the process temperature in the chamber within the same temperature range. In this embodiment, the temperature range is 450°C.

[0109] In the prior art, TDMAT is usually used as the Ti source. However, the ALD reaction requires the precursor (TDMAT) to be stably adsorbed on the wafer surface. If a high temperature of 450°C is used, TDMAT will decompose before being adsorbed on the wafer surface, resulting in abnormal adsorption. Therefore, TiN can only be deposited at a relatively low temperature of about 200°C.

[0110] However, the present application uses TiCl4 as the titanium source (precursor), which makes it possible to deposit TiN at 450°C. In addition, when depositing a low-Cl-content TiN layer, the temperature of 450°C no longer needs to be reduced during the entire process, which helps to avoid the generation of TiN cracks and the risk of reducing the service life of the heating disc.

[0111] In this embodiment, the reducing gas is H2.

[0112] H2 can reduce TiCl4 by reactions (1) and (2) to remove Cl, thereby obtaining a low-Cl-content, high-continuity TiN thin film.

[0113] 2TiCl4 + H2→ 2(TiCl3)++ 2HCl (1)

[0114] TiCl4 + H2→ (TiCl2)++ 2HCl (2)

[0115] As Figure 4As shown, in the present embodiment, the step S3, introducing the precursor, depositing a prescribed film above the buffer layer, introducing the reducing gas to reduce the residual precursor, reducing the chlorine content, corresponds to at least 10 cycles.

[0116] Although the above-described methods are illustrated and described as a series of acts for simplicity, it should be understood and appreciated that the methods are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and / or concurrently with other acts from that shown and described herein or described herein but not shown.

[0117] The present application also proposes a film forming apparatus, comprising at least a process chamber, a first gas supply unit, a second gas supply unit, a third gas supply unit, a fourth gas supply unit, a fifth gas supply unit and a controller:

[0118] The process chamber, internally provided with a wafer carrier for loading a wafer;

[0119] The first gas supply unit, for introducing a chemical source gas into the process chamber;

[0120] The second gas supply unit, for introducing a precursor into the process chamber;

[0121] The third gas supply unit, for introducing a reducing gas into the process chamber;

[0122] The fourth gas supply unit, for introducing a reaction gas into the process chamber;

[0123] The fifth gas supply unit, for introducing a purge gas into the process chamber;

[0124] The controller, outputting control signals to control the process chamber, the first gas supply unit, the second gas supply unit, the third gas supply unit, the fourth gas supply unit and the fifth gas supply unit to implement the above-mentioned film forming method.

[0125] The first gas supply unit, the second gas supply unit, the third gas supply unit, the fourth gas supply unit and the fifth gas supply unit can be independent or connected to each other.

[0126] If they are independent, each supply unit will have an independent gas inlet, and if they are connected to each other, they can be connected to each other through pipes or connectors to form a gas supply system.

[0127] The film forming method and the film forming device provided by the application are suitable for chambers with metal contamination problems and chambers with poor particles, and can effectively control the diffusion and contamination of particles in the chamber by improving the process, precisely controlling the temperature and optimizing the timing of wafer entering the chamber, thereby improving the production efficiency and product quality while improving the film quality and effectively avoiding potential equipment problems.

[0128] The film forming method and the film forming device provided by the application have the following beneficial effects.

[0129] 1) On the basis of the existing semiconductor chamber, only one path of reducing gas (H2) is added, and such an improved process not only reduces the complexity and cost of the equipment, but also improves the convenience of operation.

[0130] 2) TDMAT is not required, which not only avoids the problem of C contamination of the chamber, but also keeps the whole process at 450 DEG C, and such temperature control not only ensures the quality and stability of the film, but also effectively avoids the problem of TiN film cracking that may occur during the temperature rising and falling process of the heating disc, thereby prolonging the service life of the heating disc.

[0131] 3) The wafer is moved into the chamber before the pre-coating layer, which further avoids the influence of the TiN film on the service life of the heating disc and the vacuum chuck.

[0132] As shown in the present application and claims, unless the context clearly indicates otherwise, the words "one", "an", "a", and / or "the" do not mean to specify a single number, but also include plural. Generally, the terms "comprise" and "include" only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0133] In addition, the terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the application, unless otherwise specified, the meaning of "multiple" is two or more, unless otherwise explicitly limited.

[0134] The above embodiments are provided for those skilled in the art to implement or use the application, and those skilled in the art can make various modifications or changes to the above embodiments without departing from the inventive concept of the application, and therefore the protection scope of the application should not be limited by the above embodiments, but should be the maximum scope of the innovative features mentioned in the claims.

Claims

1. A film forming method characterized by, The method comprises the following steps: moving the wafer into the chamber, determining whether a certain thickness of the specified film as a pre-coating layer exists in the chamber, if the pre-coating layer exists, entering the next step, if the pre-coating layer does not exist, depositing a certain thickness of the specified film as a pre-coating layer; introducing a chemical source gas to deposit a buffer layer above the pre-coating layer; introducing a precursor to deposit the specified film above the buffer layer, and introducing a reducing gas to reduce the residual precursor; The specified film is a Ti-containing metal film, the precursor is an inorganic Ti-containing material, and the process temperature in the chamber is kept in the same temperature range.

2. The film forming method according to claim 1, characterized by, The step of depositing a certain thickness of the specified film as a pre-coating layer further comprises the following steps: introducing a precursor to allow the precursor to be adsorbed on the surface of the chamber; introducing a purge gas to purge the excess precursor in the chamber; introducing a reaction gas to react with the precursor adsorbed on the surface of the chamber to generate the specified film; introducing a purge gas to purge the excess reaction gas in the chamber.

3. The film formation method according to claim 1, wherein The step of depositing a buffer layer above the pre-coating layer further comprises the following steps: introducing a chemical source gas to form a buffer layer above the pre-coating layer; introducing a purge gas to purge the excess chemical source gas in the chamber.

4. The film formation method according to claim 1, wherein The step of introducing a precursor to deposit the specified film above the buffer layer further comprises the following steps: introducing a precursor to allow the precursor to be adsorbed on the surface of the buffer layer; introducing a purge gas to purge the excess precursor in the chamber; introducing a reaction gas to react with the precursor adsorbed on the surface of the buffer layer to generate the specified film; introducing a purge gas to purge the excess reaction gas in the chamber.

5. The film forming method according to claim 1 or 2, characterized by, The step of depositing a buffer layer above the pre-coating layer further comprises the following steps: introducing a reducing gas to reduce the residual precursor.

6. The film formation method according to claim 1, wherein The reducing gas is H2.

7. The film forming method according to claim 2 or 3 or 4, characterized by, The purge gas comprises nitrogen and / or inert gas.

8. The film forming method according to claim 2 or 4, characterized by, The reaction gas is NH3.

9. The film formation method according to claim 1, wherein The buffer layer is an amorphous silicon film, and the chemical source gas is dichlorosilane or silane.

10. The film formation method according to claim 1, wherein The step of depositing a certain thickness of the specified film as a pre-coating layer corresponds to a cycle period of at least 10,000 cycles.

11. The film formation method according to claim 1, wherein The step of depositing a buffer layer above the pre-coating layer corresponds to a cycle period of at least 100 cycles.

12. The film formation method according to claim 1, wherein The step of introducing a precursor to deposit the specified film above the buffer layer and introducing a reducing gas to reduce the residual precursor corresponds to a cycle period of at least 10 cycles.

13. A film forming apparatus characterized by comprising: It comprises: a process chamber, which is internally provided with a wafer carrier for loading a wafer; a first gas supply part for introducing a chemical source gas into the process chamber; a second gas supply part for introducing a precursor into the process chamber; a third gas supply part for introducing a reducing gas into the process chamber; a fourth gas supply part for introducing a reaction gas into the process chamber; a fifth gas supply part for introducing a purge gas into the process chamber; a controller for outputting control signals to control the process chamber, the first gas supply part, the second gas supply part, the third gas supply part, the fourth gas supply part and the fifth gas supply part to implement the film forming method according to any one of claims 1 to 12.

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