An optical module

Abstract

The application discloses an optical module, comprising a light transceiver assembly. The light transceiver assembly comprises a transceiver shell, a light transmitter device, a light receiver device, a fiber adapter and a third circuit board. The light transmitter device, the light receiver device and the fiber adapter are sequentially inlaid in a spout of the light transceiver assembly. The third circuit board is inserted by the spout. The transceiver shell is internally provided with a first filter, a lithium niobate chip, a second lens, a second filter and a third filter. The light transmitter device is internally provided with a laser chip and a first lens. The light receiver device is internally provided with a third lens and a light receiving chip. The lithium niobate chip comprises a substrate and a lithium niobate film, and the optical loss is less than 10 dB. The lithium niobate film is laid on the substrate and the thickness is less than 100 mu m. In the application, the laser chip provides high-power light, and the optical loss of the lithium niobate chip is less than that of a silicon optical chip, so that the modulated light signal modulated by the lithium niobate chip meets the requirement of the optical power of the light emitted by the 50G PON.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optical fiber communication, and in particular to an optical module. BACKGROUND

[0002] The international standard ITU-T G.9804.3 of 50G GPON has been released in September 2021. In order to maintain the current PON 29dB / 32dB link budget, the 50G PON standard puts forward higher requirements on the optical power of the light emitted by the OLT optical module. The current conventional 53GBaud EML cannot meet the requirements of the optical power of the light emitted by the 50G PON.

[0003] In order to meet the requirements of the optical power of the light emitted by the OLT optical module of the 50G PON standard, many international manufacturers have developed EML+SOA chip solutions for 50G PON. However, the international manufacturers who are currently developing EML+SOA chip solutions for 50G PON have encountered difficult technical problems that are difficult to overcome, and there is currently no EML+SOA optical device for 50G PON OLT. Therefore, there is no optical module that can meet the requirements of the optical power of the light emitted by the 50G PON. SUMMARY

[0004] The present application provides an optical module that meets the requirements of the optical power of the light emitted by the 50G PON.

[0005] An optical module comprises:

[0006] An optical transceiver assembly comprises a transceiver shell, an optical transmitter device, an optical receiver device, a fiber adapter, and a third circuit board;

[0007] The transceiver shell is provided with a first port, a second port, a third port, and a fourth port, and is internally provided with a first optical filter, a lithium niobate chip, a second lens, a second optical filter, and a third optical filter;

[0008] The optical transmitter device is inlaid in the first port and is internally provided with a laser chip and a first lens;

[0009] The optical receiver device is inlaid in the second port and is internally provided with a third lens and an optical receiver chip;

[0010] The fiber adapter is inlaid in the third port;

[0011] The third circuit board is inserted from the fourth port and connected to the lithium niobate chip;

[0012] The first optical filter is located above the optical transmitter device and is used to reflect the high-power light emitted by the optical transmitter device to the lithium niobate chip;

[0013] The lithium niobate chip comprises a substrate and a lithium niobate film, and the optical loss is less than 10 dB;

[0014] The lithium niobate film is laid on the substrate and has a thickness less than 100 μm;

[0015] The second lens is located between the lithium niobate chip and the second filter.

[0016] The third filter is located between the second filter and the light receiving device and is used for filtering light.

[0017] Beneficial effects: the application provides an optical module, which comprises a light transceiver assembly. The light transceiver assembly comprises a transceiver shell, a light emitting device, a light receiving device, a fiber adapter and a third circuit board. The transceiver shell is provided with a first nozzle, a second nozzle, a third nozzle and a fourth nozzle. The light emitting device is inlaid in the first nozzle. The light receiving device is inlaid in the second nozzle. The fiber adapter is inlaid in the third nozzle. The third circuit board is inserted by the fourth nozzle. The transceiver shell is internally provided with a first filter, a lithium niobate chip, a second lens, a second filter and a third filter. The light emitting device is internally provided with a laser chip and a first lens. The light receiving device is internally provided with a third lens and a light receiving chip. The laser chip is a high-power DFB laser chip. The high-power DFB laser chip is used for emitting high-power light. The first lens is used for coupling the high-power light emitted by the laser chip to the first filter. The first filter, located above the light emitting device, is used for reflecting the high-power light emitted by the light emitting device to the lithium niobate chip. The lithium niobate chip, connected with the third circuit board, comprises a substrate and a lithium niobate film, and the optical loss is less than 10 dB, which is used for modulating the high-power light to obtain a modulated light signal. The lithium niobate film is laid on the substrate and the thickness is less than 100 μm. Since the lithium niobate chip is relatively small and the integration accuracy is relatively high, compared with the silicon optical chip, the lithium niobate chip has the advantages of low power consumption and low optical loss. Among them, the optical loss of the silicon optical chip is less than 11.2 dB, and the optical loss of the lithium niobate chip is less than 10 dB. Since the optical loss of the silicon optical chip is less than 11.2 dB, in order to make the optical module comprising the combination of DFB laser chip+silicon optical chip meet the requirement of the optical power of the emitted light of 50G PON, the optical power of the light emitted by the DFB laser chip is required to be >158mW. Since the optical loss of the lithium niobate chip is less than 10 dB, in order to make the optical module comprising the combination of DFB laser chip+lithium niobate chip meet the requirement of the optical power of the emitted light of 50G PON, the optical power of the light emitted by the DFB laser chip is required to be >80mW. The optical power of the light emitted by the conventional DFB laser chip is less than 50mW, and the optical power of the light emitted by the high-power DFB laser chip is less than 120mW. From the current technology, it is difficult for the optical power of the light emitted by the DFB laser chip to meet 120mW or more in the full temperature state. Therefore, in order for the optical module to meet the requirement of the optical power of the emitted light of 50G PON, the optical module can only adopt the combination mode of DFB laser chip+lithium niobate chip. The second lens is located between the lithium niobate chip and the second filter, and is used for coupling the high-power light signal to the second filter. The second filter is used for transmitting the high-power light signal to the fiber adapter. The second light signal incident to the fiber adapter is reflected to the third filter through the second filter. The third filter, located between the second filter and the light receiving device, is used for filtering out other wavelength light signals except the second light signal. The third lens is used for coupling the second light signal to the light receiving chip.In the present application, the laser chip provides high-power light, and the light loss of the lithium niobate chip is less than that of the silicon optical chip, so that the modulated light signal modulated by the lithium niobate chip meets the requirement of the optical power of the 50G PON emission light. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments or prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0019] Figure 1 Connection diagram of optical communication system;

[0020] Figure 2 Structure diagram of optical network terminal;

[0021] Figure 3 Structure diagram of optical module according to some embodiments;

[0022] Figure 4 Exploded structure diagram of optical module according to some embodiments;

[0023] Figure 5 Sectional view of optical module according to some embodiments;

[0024] Figure 6 Structure diagram of optical transceiver assembly and circuit board according to some embodiments;

[0025] Figure 7 Structure diagram of optical transceiver assembly according to some embodiments;

[0026] Figure 8 First sectional view of optical transceiver assembly according to some embodiments;

[0027] Figure 9 Second sectional view of optical transceiver assembly according to some embodiments;

[0028] Figure 10 Third sectional view of optical transceiver assembly according to some embodiments;

[0029] Figure 11 Exploded view of optical transceiver assembly according to some embodiments;

[0030] Figure 12 Structure diagram of optical receiving device according to some embodiments;

[0031] Figure 13 Exploded view of optical receiving device according to some embodiments;

[0032] Figure 14 is a cross-sectional view of a light receiving device according to some embodiments;

[0033] Figure 15 is a structural diagram of a light emitting device according to some embodiments;

[0034] Figure 16 is an exploded view of a light emitting device according to some embodiments;

[0035] Figure 17 is a cross-sectional view of a light emitting device according to some embodiments;

[0036] Figure 18 is a structural diagram of a third circuit board according to some embodiments;

[0037] Figure 19 is a structural diagram of a transceiver housing according to some embodiments;

[0038] Figure 20 is a cross-sectional view of a transceiver housing according to some embodiments;

[0039] Figure 21 is an exploded view of a transceiver housing according to some embodiments;

[0040] Figure 22 is a structural diagram of a transceiver housing with the upper cover removed according to some embodiments;

[0041] Figure 23 is a first structural diagram of a transceiver socket according to some embodiments;

[0042] Figure 24 is a second structural diagram of a transceiver socket according to some embodiments;

[0043] Figure 25 is a third structural diagram of a transceiver socket according to some embodiments;

[0044] Figure 26 is a fourth structural diagram of a transceiver socket according to some embodiments;

[0045] Figure 27 is a cross-sectional view of a transceiver socket according to some embodiments;

[0046] Figure 28 is a first structural diagram of an upper cover according to some embodiments;

[0047] Figure 29 is a second structural diagram of the upper cover according to some embodiments;

[0048] Figure 30 FIG. 4 is a light path diagram of an optical module according to some embodiments. DETAILED DESCRIPTION

[0049] In optical communication systems, light signals are used to carry the information to be transmitted. These signals are then transmitted via information transmission equipment such as optical fibers or optical waveguides to information processing equipment such as computers to complete the information transmission. Because light is passive when transmitted through optical fibers or optical waveguides, low-cost, low-light-loss information transmission is possible. Furthermore, the signals transmitted by information transmission equipment such as optical fibers or optical waveguides are optical signals, while the signals that information processing equipment such as computers can recognize and process are electrical signals. Therefore, in order to establish an information connection between information transmission equipment such as optical fibers or optical waveguides and information processing equipment such as computers, conversion between electrical and optical signals is necessary.

[0050] In the field of optical communications, optical modules implement the aforementioned conversion between optical and electrical signals. They include both an optical port and an electrical port. The optical port enables optical communication with information transmission equipment such as optical fibers or optical waveguides, while the electrical port enables electrical connection with an optical network terminal (e.g., an optical modem). The electrical connection is primarily used for power supply, I2C signal transmission, data transmission, and grounding. The optical network terminal transmits electrical signals to information processing equipment such as computers via network cables or wireless fidelity (Wi-Fi).

[0051] Figure 1 This is the connection diagram of the optical communication system. Figure 1 As shown, the optical communication system includes a remote server 1000 , a local information processing device 2000 , an optical network terminal 100 , an optical module 200 , an optical fiber 101 and a network cable 103 .

[0052] One end of optical fiber 101 is connected to remote server 1000, and the other end is connected to optical network terminal 100 via optical module 200. Optical fiber itself can support long-distance signal transmission, for example, signal transmission over several kilometers (6 to 8 kilometers). Furthermore, if repeaters are used, theoretically, transmission over an unlimited distance is possible. Therefore, in typical optical communication systems, the distance between remote server 1000 and optical network terminal 100 can typically reach several thousand, tens of kilometers, or even hundreds of kilometers.

[0053] One end of the network cable 103 is connected to the local information processing device 2000, and the other end is connected to the optical network terminal 100. The local information processing device 2000 can be any one or more of the following devices: a router, a switch, a computer, a mobile phone, a tablet computer, a television, etc.

[0054] The physical distance between the remote server 1000 and the optical network terminal 100 is greater than the physical distance between the local information processing device 2000 and the optical network terminal 100. The connection between the local information processing device 2000 and the remote server 1000 is completed by the optical fiber 101 and the network cable 103; and the connection between the optical fiber 101 and the network cable 103 is completed by the optical module 200 and the optical network terminal 100.

[0055] The optical module 200 includes an optical port and an electrical port. The optical port is configured to access the optical fiber 101, so that the optical module 200 and the optical fiber 101 establish a bidirectional optical signal connection. The electrical port is configured to access the optical network terminal 100, so that the optical module 200 and the optical network terminal 100 establish a bidirectional electrical signal connection. The optical module 200 realizes mutual conversion between optical signals and electrical signals, so that the optical fiber 101 and the optical network terminal 100 establish an information connection. For example, the optical signal from the optical fiber 101 is converted by the optical module 200 into an electrical signal and input into the optical network terminal 100. The electrical signal from the optical network terminal 100 is converted by the optical module 200 into an optical signal and input into the optical fiber 101. Since the optical module 200 is a tool for realizing mutual conversion between optical signals and electrical signals, it does not have the function of processing data, and the information does not change in the above optical-electrical conversion process.

[0056] The optical network terminal 100 includes a housing substantially in the shape of a rectangular cuboid, and an optical module interface 102 and a network cable interface 104 provided on the housing. The optical module interface 102 is configured to access the optical module 200, so that the optical network terminal 100 and the optical module 200 establish a bidirectional electrical signal connection. The network cable interface 104 is configured to access the network cable 103, so that the optical network terminal 100 and the network cable 103 establish a bidirectional electrical signal connection. The connection between the optical module 200 and the network cable 103 is established through the optical network terminal 100. For example, the optical network terminal 100 transmits the electrical signal from the optical module 200 to the network cable 103, and transmits the electrical signal from the network cable 103 to the optical module 200, so the optical network terminal 100, as the upper machine of the optical module 200, can monitor the work of the optical module 200. The upper machine of the optical module 200 can also include an optical line terminal (OLT) and the like in addition to the optical network terminal 100.

[0057] The remote server 1000 establishes a bidirectional signal transmission channel with the local information processing device 2000 through the optical fiber 101, the optical module 200, the optical network terminal 100, and the network cable 103.

[0058] Figure 2 The structure diagram of the optical network terminal, in order to clearly show the connection relationship between the optical module 200 and the optical network terminal 100, Figure 2Only the structure of the optical network terminal 100 related to the optical module 200 is shown. As shown in Figure 2 The optical network terminal 100 further includes a circuit board 105 arranged in the housing, a cage 106 arranged on the surface of the circuit board 105, a heat sink 107 arranged on the cage 106, and an electrical connector arranged inside the cage 106. The electrical connector is configured to access the electrical port of the optical module 200; the heat sink 107 has a fin or other protrusion to increase the heat dissipation area.

[0059] The optical module 200 is inserted into the cage 106 of the optical network terminal 100, and the optical module 200 is fixed by the cage 106. The heat generated by the optical module 200 is conducted to the cage 106 and then diffused through the heat sink 107. After the optical module 200 is inserted into the cage 106, the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106, so that the optical module 200 is connected to the optical network terminal 100 in a bidirectional electrical signal connection. In addition, the optical port of the optical module 200 is connected to the optical fiber 101, so that the optical module 200 is connected to the optical fiber 101 in a bidirectional optical signal connection.

[0060] Figure 3 A structural diagram of an optical module according to some embodiments. Figure 4 A structural diagram of an optical module according to some embodiments. As shown in Figure 3 and 4 The optical module 200 includes a housing, a circuit board 300 arranged in the housing, and an optical transceiver assembly 400.

[0061] The housing includes an upper housing 201 and a lower housing 202, and the upper housing 201 is covered on the lower housing 202 to form the above-mentioned housing with two openings; the outer contour of the housing generally presents a square body.

[0062] In some embodiments of the present disclosure, the lower housing 202 includes a bottom plate 2021 and two lower side plates 2022 arranged perpendicularly to the bottom plate 2021 on both sides of the bottom plate 2021; the upper housing 201 includes a cover plate 2011, and the cover plate 2011 is covered on the two lower side plates 2022 of the lower housing 202 to form the above-mentioned housing.

[0063] In some embodiments, the lower housing 202 includes a bottom plate 2021 and two lower side plates 2022 arranged perpendicularly to the bottom plate 2021 on both sides of the bottom plate 2021; the upper housing 201 includes a cover plate 2011 and two upper side plates arranged perpendicularly to the cover plate 2011 on both sides of the cover plate 2011, and the two upper side plates are combined with the two lower side plates 2022 to realize that the upper housing 201 is covered on the lower housing 202.

[0064] The direction of the line connecting the two openings 204 and 205 may be consistent with the length direction of the optical module 200, or may be inconsistent with the length direction of the optical module 200. For example, the opening 204 is located at the end of the optical module 200 ( Figure 3 The opening 205 is also located at the end of the optical module 200 ( Figure 3 Alternatively, opening 204 is located at the end of optical module 200, while opening 205 is located on the side of optical module 200. Opening 204 is an electrical port, through which the gold finger 301 of circuit board 300 extends and is inserted into a host computer (e.g., optical network terminal 100); opening 205 is an optical port, configured to receive an external optical fiber 101, thereby connecting the external optical fiber 101 to the optical transceiver assembly 400 within optical module 200.

[0065] The combined assembly of the upper housing 201 and the lower housing 202 facilitates installation of components such as the circuit board 300 and the optical transceiver assembly 400 within the housing, with the upper housing 201 and the lower housing 202 providing encapsulation and protection for these components. Furthermore, during assembly of the circuit board 300 and the optical transceiver assembly 400, the positioning, heat dissipation, and electromagnetic shielding components of these components are easily arranged, facilitating automated production.

[0066] In some embodiments, the upper shell 201 and the lower shell 202 are generally made of metal materials, which are conducive to electromagnetic shielding and heat dissipation.

[0067] In some embodiments, the optical module 200 further includes an unlocking component located outside its housing, and the unlocking component is configured to achieve a fixed connection between the optical module 200 and the host computer, or to release the fixed connection between the optical module 200 and the host computer.

[0068] For example, the unlocking component is located on the outer walls of the two lower side panels 2022 of the lower housing 202 and has a snap-fitting component that mates with the host computer cage (e.g., the cage 106 of the optical network terminal 100). When the optical module 200 is inserted into the host computer cage, the snap-fitting component of the unlocking component secures the optical module 200 in the host computer cage. When the unlocking component is pulled, the snap-fitting component of the unlocking component moves accordingly, thereby changing the connection between the snap-fitting component and the host computer, thereby releasing the snap-fitting relationship between the optical module 200 and the host computer, thereby allowing the optical module 200 to be removed from the host computer cage.

[0069] The circuit board 300 includes circuit traces, electronic components, and chips. The circuit traces connect the electronic components and chips together according to the circuit design to achieve functions such as power supply, electrical signal transmission, and grounding. Electronic components include, for example, capacitors, resistors, transistors, and metal-oxide-semiconductor field-effect transistors (MOSFETs). Chips include, for example, microcontroller units (MCUs), laser driver chips, limiting amplifiers, clock and data recovery (CDR) chips, power management chips, and digital signal processing (DSP) chips.

[0070] The circuit board 300 is generally a rigid circuit board. Due to its relatively hard material, the rigid circuit board can also realize the load-bearing function. For example, the rigid circuit board can stably carry the above-mentioned electronic components and chips; when the optical transceiver component is located on the circuit board, the rigid circuit board can also provide stable load-bearing; the rigid circuit board can also be inserted into the electrical connector in the upper computer cage.

[0071] The circuit board 300 further includes a gold finger 301 formed on the end surface thereof. The gold finger 301 is composed of a plurality of independent pins. The circuit board 300 is inserted into the cage 106, and the gold finger 301 is electrically connected to the electrical connector in the cage 106. The gold finger 301 can be provided on only one side of the circuit board 300 (e.g. Figure 4 The gold finger 301 is configured to establish an electrical connection with the host computer to achieve power supply, grounding, I2C signal transmission, data signal transmission, etc.

[0072] Of course, some optical modules also use flexible printed circuits. They are typically used in conjunction with rigid printed circuits to complement them. For example, a flexible printed circuit can be used to connect a rigid printed circuit to an optical transceiver assembly.

[0073] The optical transceiver assembly 400 is used to transmit and receive optical signals.

[0074] Figure 5 is a cross-sectional view of an optical module according to some embodiments. Figure 6 is a structural diagram of an optical transceiver assembly and a circuit board according to some embodiments. Figure 7 FIG is a structural diagram of an optical transceiver assembly according to some embodiments. Figures 4-7As can be seen, in some embodiments, the circuit board 300 comprises a first circuit board 301. The first circuit board 301 is a rigid circuit board. The first end of the first circuit board 301 is connected to the second end of the third circuit board 303. The second end of the first circuit board 301 is provided with a gold finger.

[0075] Figure 8 A first cross-sectional view of an optical transceiver assembly according to some embodiments. Figure 9 A second cross-sectional view of an optical transceiver assembly according to some embodiments. Figure 10 A third cross-sectional view of an optical transceiver assembly according to some embodiments. Figure 11 An exploded view of an optical transceiver assembly according to some embodiments. As Figures 4-11 As can be seen, in some embodiments, the optical transceiver assembly 400 comprises a transceiver housing 401, an optical transmitter device 402, an optical receiver device 403, an optical fiber adapter 404 and a third circuit board 303. The transceiver housing 401 comprises a first port 4013, a second port 4014, a third port 4015 and a fourth port 4016. The optical transmitter device 402 is inlaid in the first port 4013. The optical receiver device 403 is inlaid in the second port 4014. The optical fiber adapter 404 is inlaid in the third port 4015. The third circuit board 303 is inserted into the transceiver housing through the fourth port 4016. The optical transmitter device 402 is provided with a laser chip 4021, a transmitting turning prism 40211 and a first lens 4022. The transceiver housing 401 is provided with a first filter 40212, an isolator 4023, a lithium niobate chip 4024, a second lens 4025, a second filter 4026 and a third filter 40213. The optical receiver device 403 is provided with a third lens 4027 and an optical receiving chip 4028.

[0076] The laser chip 4021 is used to emit high-power light. Specifically, since the laser chip 4021 is a high-power DFB laser chip, the laser chip 4021 can provide high-power light, so that the transmitting optical signal meets the transmitting power of 50G PON. The high-power light emitted by the laser chip 4021 has a wavelength of λ1. The high-power light emitted by the laser chip 4021 is divergent light.

[0077] The transmitting turning prism 40211 is used to change the propagation direction of light, so that the first lens 4022 receives the high-power light emitted by the laser chip 4021. Specifically, since the light emitting port of the laser chip 4021 is parallel to the first lens 4022, if there is no transmitting turning prism 40211, the first lens 4022 can only receive a small part of the transmitting light, or cannot receive the transmitting light. The transmitting turning prism 40211 is located below the first lens 4022. The transmitting turning prism 40211 is used to change the propagation direction of light, so that the first lens 4022 receives the high-power light emitted by the laser chip 4021.

[0078] Since the high-power light emitted by the laser chip 4021 is divergent light, in order to couple the divergent light emitted by the laser chip 4021 into the lithium niobate chip 4024, a first lens 4022 is arranged between the laser chip 4021 and the lithium niobate chip 4024.

[0079] The first lens 4022 is located between the laser chip 4021 and the lithium niobate chip 4024, and is used to couple the high-power light emitted by the laser chip 4021 into the lithium niobate chip 4024. Specifically, the first lens 4022 is a focusing lens, and the focusing lens couples the divergent light into the lithium niobate chip 4024.

[0080] In addition to being a focusing lens, the first lens 4022 can also be a combination of a collimating lens and a focusing lens. When the first lens 4022 is a focusing lens, the first lens 4022 is located in the light emitting device 402; when the first lens 4022 is a combination of a collimating lens and a focusing lens, the first lens 4022 includes a first sub-lens and a second sub-lens, the first sub-lens is a collimating lens, and the second sub-lens is a focusing lens. The first sub-lens is located in the light emitting device 402, and the second sub-lens is located in the transceiver housing 401. The first sub-lens first collimates the divergent light to obtain collimated light. The second sub-lens then couples the collimated light into the lithium niobate chip 4024.

[0081] The first filter 40212 is located above the light emitting device 402, and is used to reflect the high-power light emitted by the light emitting device into the lithium niobate chip 4024. Specifically, since the light emitting direction of the light emitting device 402 and the light entering direction of the lithium niobate chip 4024 are perpendicular to each other, in order to couple the light emitted by the light emitting device 402 into the lithium niobate chip 4024, a first filter 40212 is arranged between the light emitting device 402 and the lithium niobate chip 4024. The first filter 40212 changes the propagation direction of the light emitted by the light emitting device 402, so that the light emitted by the light emitting device 402 is coupled into the lithium niobate chip 4024.

[0082] Since the light coupled into the lithium niobate chip 4024 through the first lens 4022 can return along the original path, thereby damaging the laser chip 4021. In order to prevent the light coupled into the lithium niobate chip 4024 through the first lens 4022 from returning along the original path, an isolator 4023 is arranged between the laser chip 4021 and the lithium niobate chip 4024.

[0083] The isolator 4023 is used to prevent the light coupled into the lithium niobate chip 4024 through the first lens 4022 from returning along the original path.

[0084] When the first lens 4022 is a focusing lens, the isolator 4023 is located between the first lens 4022 and the lithium niobate chip 4024; when the first lens 4022 is a combination of a collimating lens and a focusing lens, the isolator 4023 is located between the first sub-lens and the second sub-lens.

[0085] The international standard ITU-T G.9804.3 of 50G GPON has been released in September 2021. In order to maintain the current PON 29dB / 32dB link budget, the 50G PON standard requires the optical power of the light emitted by the OLT optical module to be ≥8.5dBm. The current conventional 53GBaud EML cannot meet the requirement of the optical power of the light emitted by the 50G PON. In order to meet the requirement of the optical power of the light emitted by the OLT optical module in the 50G PON standard, many international manufacturers have developed EML+SOA chip solutions for 50G PON. However, the international manufacturers who are currently developing EML+SOA chip solutions for 50G PON have encountered difficult technical problems that are difficult to overcome, and there is currently no EML+SOA optical device for 50G PON OLT. Therefore, there is no optical module that can meet the requirement of the optical power of the light emitted by the 50G PON.

[0086] In order to solve this problem, in some embodiments, it is proposed that the optical module includes a combination of a DFB laser chip + a lithium niobate chip.

[0087] The lithium niobate chip 4024 includes a substrate and a lithium niobate film, the substrate is a glass substrate, and the lithium niobate film is laid on the substrate. The thickness of the lithium niobate film is less than 100μm. Since the lithium niobate chip is relatively small and has high integration accuracy, the lithium niobate chip has the advantages of low power consumption and low optical loss compared with a silicon optical chip. Among them, the optical loss of the silicon optical chip is less than 11.2dB, and the optical loss of the lithium niobate chip is less than 10dB.

[0088] In order to further reduce the size of the lithium niobate chip, in some embodiments, the thickness of the lithium niobate film is less than 20μm. To further reduce the size of the lithium niobate chip, the thickness of the lithium niobate film is less than 100μm.

[0089] Since the optical loss of the silicon optical chip is less than 11.2dB, in order to make the optical module including a combination of a DFB laser chip + a silicon optical chip meet the requirement of the optical power of the light emitted by the 50G PON, the optical power of the light emitted by the DFB laser chip is required to be >158mW. Since the optical loss of the lithium niobate chip is less than 10dB, in order to make the optical module including a combination of a DFB laser chip + a lithium niobate chip meet the requirement of the optical power of the light emitted by the 50G PON, the optical power of the light emitted by the DFB laser chip is required to be >80mW.

[0090] The light power of the light emitted by the conventional DFB laser chip is less than 50 mW, and the light power of the light emitted by the high-power DFB laser chip is less than 120 mW. At present, it is difficult to meet the requirement of the light power of the light emitted by the DFB laser chip being more than 120 mW in the full-temperature state. Therefore, in order to meet the requirement of the light power of the light emitted by the 50G PON, the optical module can only adopt the combination of the DFB laser chip and the lithium niobate chip.

[0091] The lithium niobate chip 4024 is used for modulating the high-power light. Specifically, one side of the lithium niobate chip 4024 is provided with an input interface and an output interface, and the lithium niobate chip 4024 is internally provided with an input optical waveguide, an MZ modulator, and an output optical waveguide. The input optical waveguide is connected with the input interface and the input end of the MZ modulator, and the output optical waveguide is connected with the output end of the MZ modulator and the output optical interface. The high-power light is incident into the input optical waveguide of the lithium niobate chip 4024 through the input interface. Most of the high-power light received by the input optical waveguide is incident into the input end of the MZ modulator. The MZ modulator modulates the high-power light to obtain a modulated light signal. The modulated light signal is output from the output end of the MZ modulator to the output optical waveguide. Most of the modulated light signal received by the output optical waveguide is output through the output interface. The modulated light signal is a divergent light signal.

[0092] The input interface and the output interface of the lithium niobate chip 4024 can also be arranged on different sides of the lithium niobate chip 4024. However, if the input interface and the output interface of the lithium niobate chip 4024 are arranged on different sides of the lithium niobate chip 4024, the length of the lithium niobate chip 4024 may increase, and thus the length of the optical module in which the lithium niobate chip 4024 is packaged may increase. Therefore, in order to reduce the length of the lithium niobate chip 4024, in some embodiments, one side of the lithium niobate chip 4024 can be provided with the input interface and the output interface.

[0093] The surface of the lithium niobate chip 4024 is provided with a first power monitor and a second power monitor. The first power monitor is located near the input optical waveguide of the lithium niobate chip 4024, and the second power monitor is located near the output optical waveguide of the lithium niobate chip 4024. The first power monitor is used for monitoring a small part of the light received by the input optical waveguide to monitor the light power. The second power monitor is used for monitoring a small part of the light signal received by the output optical waveguide to monitor whether the MZ modulator is at the best modulation point.

[0094] The lithium niobate chip can modulate high-power light (laser chip emitted light power > 80mW), and the optical loss of the lithium niobate thin film modulator (optical loss less than 10dB) is less than the optical loss of the silicon optical chip (optical loss less than 11.2dB), so that the modulated optical signal can meet the optical power of the 50G PON emission.

[0095] The second lens 4025 is located between the lithium niobate chip 4024 and the optical filter 4026, and is used for collimating the optical signal output by the lithium niobate chip 4024. Specifically, since the optical signal output by the lithium niobate chip 4024 is a divergent optical signal, the second lens 4025 is a collimating lens, which collimates the divergent optical signal output by the lithium niobate chip 4024 to obtain a collimated optical signal.

[0096] The second optical filter 4026 is used for transmitting a collimated optical signal of a specific wavelength and reflecting a second optical signal to the third lens 4027. Specifically, the second optical filter 4026 is used for transmitting a collimated optical signal of wavelength λ1 and reflecting a second optical signal to the third lens 4027. Wherein, the first optical signal is the optical signal emitted by the transceiver shell, and the second optical signal is the optical signal incident into the transceiver shell.

[0097] The second optical filter 4026 can include two 45° prisms, the hypotenuses of which are bonded, and one of the hypotenuses is coated with a filter film; or the second optical filter 4026 can include a glass sheet, wherein one end of the glass sheet facing the optical fiber is coated with a filter film. The design of the second optical filter 4026 including two 45° prisms facilitates the production process operation. The second optical filter 4026 including a glass sheet needs a filter support to be fixed on the transceiver tube seat.

[0098] The third optical filter 40213 is located between the second optical filter 4026 and the third lens 4027, and is used for filtering out optical signals of other wavelengths except the second optical signal. Specifically, part of the emitted optical signal incident into the optical fiber adapter 404 can be folded back into the transceiver shell, causing signal crosstalk. In order to avoid signal crosstalk, in some embodiments, the third optical filter 40213 is arranged between the second optical filter 4026 and the third lens 4027. The third optical filter 40213 filters out optical signals of other wavelengths except the second optical signal, so that the optical signal coupled to the optical receiving chip 4028 through the third lens 4027 is only the second optical signal, avoiding signal crosstalk.

[0099] The third lens 4027 is located between the second optical filter 4026 and the optical receiving chip 4028, and is used for coupling the second optical signal reflected by the optical filter 4026 to the optical receiving chip 4028. Specifically, the third lens 4027 is a focusing lens, which couples the second optical signal reflected by the optical filter 4026 to the optical receiving chip 4028.

[0100] The light receiving chip 4028 is configured to convert the received second light signal into a current signal. Specifically, the light receiving chip 4028 is provided with a photosensitive surface. The photosensitive surface receives the second light signal and converts the second light signal into a current signal.

[0101] Transimpedance amplifier chip, used to convert current signals into voltage signals.

[0102] Figure 12 is a structural diagram of an optical receiving device according to some embodiments. Figure 13 is an exploded view of a light receiving device according to some embodiments. Figure 14 FIG is a cross-sectional view of a light receiving device according to some embodiments. Figures 12-14 It can be seen that in some embodiments, the optical receiving device 403 includes a receiving tube base 4031 and a receiving tube cap 4032, the receiving tube cap 4032 is inlaid with a third lens 4027, the receiving tube cap 4032 is covered on the receiving tube base 4031, the receiving pin is inserted from the bottom of the receiving tube base 4031 and extends out of the top of the receiving tube base 4031, and the optical receiving chip 4028 and the transimpedance amplifier chip are set on the top of the receiving tube base 4031.

[0103] Figure 15 is a structural diagram of a light emitting device according to some embodiments. Figure 16 is an exploded view of a light emitting device according to some embodiments. Figure 17 FIG is a cross-sectional view of a light emitting device according to some embodiments. Figures 15-17 As can be seen, in some embodiments, the light emitting device 402 includes a transmitter base 40215 and a transmitter cap 40216. The transmitter cap 40216 is mounted on the transmitter base 40215. A light window is provided at the top of the transmitter cap 40216. The light window is used to transmit the high-power light emitted by the laser chip 4021. A flat window glass 407 is welded to the light window of the transmitter cap 40216 to ensure the sealing and light transmittance of the light emitting device 402.

[0104] like Figures 15-17 It can be seen that in some embodiments, the transmitting tube base 40215 is provided with a laser chip 4021 and an transmitting turning prism 40211. Specifically, the transmitting tube base 40215 is provided with a semiconductor cooler (TEC for short). A first ceramic substrate and an transmitting turning prism 40211 are bonded to the TEC, and the laser chip 4021 and a thermistor are provided on the first ceramic substrate. The thermistor is located near the laser chip 4021 and is used to monitor the temperature changes of the laser chip 4021. In addition to the laser chip 4021 and the thermistor, the first ceramic substrate is also provided with a circuit. This circuit is used to connect the laser chip 4021 and the thermistor to the transmitting tube pin.

[0105] Since the light outlet of the laser chip 4021 is parallel to the first lens 4022 and the flat window on the emitting tube cap 40216, in order to make the high-power light emitted by the laser chip 4021 pass through the flat window, the emitting turning prism 40211 is arranged on the emitting tube base 40215. The presence of the emitting turning prism 40211 changes the propagation direction of the high-power light emitted by the laser chip 4021, so that the high-power light can pass through the flat window.

[0106] The lens substrate 40217 is arranged on the emitting turning prism 40211, the bottom surface of the lens substrate 40217 is connected with the emitting turning prism 40211, and the side surface of the lens substrate 40217 is connected with the first lens 4022.

[0107] Figure 18 The structure diagram of the third circuit board according to some embodiments. As Figures 4-11 As can be seen from FIGS. 18 and 18, in some embodiments, the first end of the third circuit board 303 is provided with a hollow area 3033. The presence of the hollow area 3033 makes the shape of the first end of the third circuit board 303 L-shaped. The first end of the third circuit board 303 is arranged corresponding to the fourth tube opening 4016, the first end of the third circuit board 303 is clamped at the fourth tube opening 4016, the second wire bonding pin is arranged on the first end of the third circuit board 303, the first wire bonding pin is arranged on the lithium niobate chip 4024, and the first wire bonding pin is arranged corresponding to the second wire bonding pin.

[0108] Figure 19 The structure diagram of the transceiver shell according to some embodiments. Figure 20 The sectional view of the transceiver shell according to some embodiments. Figure 21 The exploded view of the transceiver shell according to some embodiments. Figure 22 The structure diagram of the transceiver shell without the upper cover body according to some embodiments. Figure 23 The first structure diagram of the transceiver tube base according to some embodiments. Figure 24 The second structure diagram of the transceiver tube base according to some embodiments. Figure 25 The third structure diagram of the transceiver tube base according to some embodiments. Figure 26 The fourth structure diagram of the transceiver tube base according to some embodiments. Figure 27 The sectional view of the transceiver tube base according to some embodiments. As Figures 4-27 As can be seen from FIGS. 18 and 18, in some embodiments, the first end of the third circuit board 303 is provided with a hollow area 3033. The presence of the hollow area 3033 makes the shape of the first end of the third circuit board 303 L-shaped. The first end of the third circuit board 303 is arranged corresponding to the fourth tube opening 4016, the first end of the third circuit board 303 is clamped at the fourth tube opening 4016, the second wire bonding pin is arranged on the first end of the third circuit board 303, the first wire bonding pin is arranged on the lithium niobate chip 4024, and the first wire bonding pin is arranged corresponding to the second wire bonding pin.

[0109] AsFigures 4-27 It can be known that, in some embodiments, the transceiving shell 401 further comprises a first port 4013, a second port 4014, a third port 4015 and a fourth port 4016. The light emitting device 402 is inlaid in the first port 4013. The light receiving device 403 is inlaid in the second port 4014. The fiber adapter 404 is inlaid in the third port 4015. The third circuit board 303 is inserted into the transceiving shell by the fourth port 4016. The first port 4013 and the second port 4014 are respectively located on both sides of the transceiving shell 401, and the third port 4015 and the fourth port 4016 are respectively located at both ends of the transceiving shell 401. The third port 4015 is located at the first end of the transceiving shell 401, and the fourth port 4016 is located at the second end of the transceiving shell 401.

[0110] The shapes of the first port 4013, the second port 4014 and the third port 4015 are all circular, which facilitates the inlaying of the light emitting device 402 in the first port 4013, the inlaying of the light receiving device 403 in the second port 4014 and the inlaying of the fiber adapter 404 in the third port 4015.

[0111] Since the fourth port 4016 is correspondingly arranged with the first end of the third circuit board 303, and the shape of the first end of the third circuit board 303 is L-shaped, the shape of the third port 4015 is L-shaped.

[0112] The fourth port 4016 comprises a first sub-port and a second sub-port, the first sub-port is more recessed relative to the second sub-port, the first sub-port is used for the insertion of the first end of the third circuit board 303, and the second sub-port is located above the third circuit board 303.

[0113] The shape of the first sub-port 40161 is L-shaped, and the shape of the area in the fourth port 4016 except the first sub-port 40161 and the second sub-port 40162 is L-shaped.

[0114] As Figures 4-27 It can be known that, in some embodiments, the transceiving shell 401 further comprises a first port 4013, a second port 4014, a third port 4015 and a fourth port 4016. The light emitting device 402 is inlaid in the first port 4013. The light receiving device 403 is inlaid in the second port 4014. The fiber adapter 404 is inlaid in the third port 4015. The third circuit board 303 is inserted into the transceiving shell by the fourth port 4016. The first port 4013 and the second port 4014 are respectively located on both sides of the transceiving shell 401, and the third port 4015 and the fourth port 4016 are respectively located at both ends of the transceiving shell 401. The third port 4015 is located at the first end of the transceiving shell 401, and the fourth port 4016 is located at the second end of the transceiving shell 401.

[0115] The fourth port 4016 comprises a first sub-port and a second sub-port, the first sub-port is more recessed relative to the second sub-port, the first sub-port is used for the insertion of the first end of the third circuit board 303, and the second sub-port is located above the third circuit board 303.

[0116] As Figures 4-27It can be seen that in some embodiments, the transceiver tube seat 4012 is further provided with a first storage cavity 40131 and a second storage cavity 40142, the first storage cavity 40131 and the second storage cavity 40142 are more recessed relative to the storage protrusion 4018, the first storage cavity 40131 and the second storage cavity 40142 are not communicated, and the second storage cavity 40142 is communicated with the third tube port 4015.

[0117] The first storage cavity 40131 is communicated with the first tube port 4013, and the first storage cavity 40131 is provided with a first support surface 40132 in the direction of the first tube port 4013, the included angle between the first support surface 40132 and the bottom surface of the support protrusion where the first support surface 40132 is located is 45°, and the first support surface 40132 is bonded with a first optical filter 40212.

[0118] If the included angle between the first support surface 40132 and the bottom surface of the support protrusion where the first support surface 40132 is located is not 45°, the light emitted by the light emitting device 402 may not be reflected into the lithium niobate chip 4024 through the first optical filter 40212, so that the coupling efficiency is low.

[0119] The second storage cavity 40142 is communicated with the second tube port 4014, the second storage cavity 40142 is provided with a support piece 40141, the second storage cavity 40142 is provided with a second support surface 40143 in the direction of the second tube port 4014, the included angle between the second support surface 40143 and the bottom surface of the support protrusion where the second support surface 40143 is located is 45°, the second support surface 40143 is arranged in parallel with the first support surface 40132, the second storage cavity 40142 is more recessed relative to the support piece 40141, the support piece 40141 is bonded with a third optical filter 40213, and the second support surface 40143 is bonded with a second optical filter 4026.

[0120] If the included angle between the second support surface 40143 and the bottom surface of the support protrusion where the second support surface 40143 is located is not 45°, the second optical signal incident by the fiber adapter 404 may not be reflected into the third optical filter 40213 through the second optical filter 4026, so that the coupling efficiency is low.

[0121] Figure 28 The first structure diagram of the upper cover body according to some embodiments. Figure 29 The second structure diagram of the upper cover body according to some embodiments. Figures 4-29It can be known that, in some embodiments, the upper cover body 4011 comprises an upper cover body bottom plate 40111 and an upper cover body side plate 40112, the upper cover body bottom plate 40111 is connected with the upper cover body side plate 40112, the upper cover body bottom plate 40111 is arranged corresponding to the clamping groove 4017 of the transceiver tube seat 4012, the upper cover body side plate 40112 is arranged corresponding to the area of the fourth tube port 4016 except the second sub-tube port 40162 and the first sub-tube port 40161, the upper cover body bottom plate 40111 is clamped in the clamping groove 4017, the upper cover body side plate 40112 is clamped in the area of the fourth tube port 4016 except the second sub-tube port 40162 and the first sub-tube port 40161, and the second makes the upper cover body 4011 and the transceiver tube seat 4012 form a transceiver cavity comprising the first sub-tube port 40161.

[0122] Since the area of the fourth tube port 4016 except the second sub-tube port 40162 and the first sub-tube port 40161 is L-shaped, the shape of the upper cover body side plate 40112 clamped with the area is L-shaped.

[0123] Figure 30 The optical path diagram of the optical module according to some embodiments. As Figures 4-30 It can be known that, in some embodiments, the laser chip 4021 emits light of a specific wavelength, the light of the specific wavelength is incident into the first lens 4022 after changing the propagation direction of the light by the emission turning prism 40211, the first lens 4022 couples the light of the specific wavelength to the first optical filter 40212, the first optical filter 40212 reflects and couples the light of the specific wavelength to the lithium niobate chip 4024, the light of the specific wavelength obtains a modulated optical signal after being modulated by the lithium niobate chip 4024, and the modulated optical signal is emitted into the fiber adapter 404 after being coupled by the second lens 4025 and transmitted by the optical filter 4026. Among them, the optical signal emitted into the fiber adapter 404 after being transmitted by the second optical filter 4026 is the emission optical signal, that is, the first optical signal.

[0124] As Figures 4-30 It can be known that, in some embodiments, the fiber adapter 404 emits a second optical signal, the second optical signal is incident into the third lens 4027 after being reflected by the second optical filter 4026 and transmitted by the third optical filter 40213, and the third lens 4027 couples the second optical signal into the light receiving chip 4028.

[0125] The application provides an optical module comprising a light transceiver assembly. The light transceiver assembly comprises a transceiver housing, a light emitting device, a light receiving device, a fiber adapter and a third circuit board. The transceiver housing is provided with a first port, a second port, a third port and a fourth port. The light emitting device is embedded in the first port. The light receiving device is embedded in the second port. The fiber adapter is embedded in the third port. The third circuit board is inserted from the fourth port. The transceiver housing is internally provided with a first filter, a lithium niobate chip, a second lens, a second filter and a third filter. The light emitting device is internally provided with a laser chip and a first lens. The light receiving device is internally provided with a third lens and a light receiving chip. The laser chip is a high-power DFB laser chip. The high-power DFB laser chip is used for emitting high-power light. The first lens is used for coupling the high-power light emitted by the laser chip to the first filter. The first filter, located above the light emitting device, is used for reflecting the high-power light emitted by the light emitting device to the lithium niobate chip. The lithium niobate chip, connected with the third circuit board, comprises a substrate and a lithium niobate film, and the optical loss is less than 10 dB, and is used for modulating the high-power light to obtain a modulated light signal. The lithium niobate film is laid on the substrate and has a thickness less than 100 μm. Since the lithium niobate chip is relatively small and has high integration accuracy, the lithium niobate chip has the advantages of low power consumption and low optical loss compared with a silicon optical chip. The optical loss of the silicon optical chip is less than 11.2 dB, and the optical loss of the lithium niobate chip is less than 10 dB. Since the optical loss of the silicon optical chip is less than 11.2 dB, in order to make the optical module comprising the combination of the DFB laser chip and the silicon optical chip meet the requirement of the optical power of the emitted light of the 50G PON, the optical power of the light emitted by the DFB laser chip is required to be greater than 158 mW. Since the optical loss of the lithium niobate chip is less than 10 dB, in order to make the optical module comprising the combination of the DFB laser chip and the lithium niobate chip meet the requirement of the optical power of the emitted light of the 50G PON, the optical power of the light emitted by the DFB laser chip is required to be greater than 80 mW. The optical power of the light emitted by a conventional DFB laser chip is less than 50 mW, and the optical power of the light emitted by a high-power DFB laser chip is less than 120 mW. At present, the optical power of the light emitted by the DFB laser chip cannot meet the requirement of more than 120 mW under the full temperature condition. Therefore, in order for the optical module to meet the requirement of the optical power of the emitted light of the 50G PON, the optical module can only adopt the combination mode of the DFB laser chip and the lithium niobate chip. The second lens is located between the lithium niobate chip and the second filter and is used for coupling the high-power light signal to the second filter. The second filter is used for transmitting the high-power light signal to the fiber adapter. The second light signal incident on the fiber adapter is reflected to the third filter through the second filter. The third filter, located between the second filter and the light receiving device, is used for filtering out other wavelength light signals except the second light signal. The third lens is used for coupling the second light signal to the light receiving chip.In the application, the laser chip provides high-power light, and the light loss of the lithium niobate chip is less than that of the silicon optical chip, so that the modulated light signal modulated by the lithium niobate chip meets the light power requirement of the 50G PON emission light.

[0126] Finally, it should be noted that: the above examples are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing examples, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing examples, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. An optical module, characterized in that: include: An optical transceiver assembly, comprising a transceiver housing, an optical emitting device, an optical receiving device, an optical fiber adapter, and a third circuit board; The transceiver housing is provided with a first nozzle, a second nozzle, a third nozzle and a fourth nozzle, and is internally provided with a first filter, a lithium niobate chip, a second lens, a second filter and a third filter; A light emitting device is embedded in the first tube mouth and is provided with a laser chip and a first lens; A light receiving device is embedded in the second tube mouth and is provided with a third lens and a light receiving chip; Optical fiber adapter, embedded in the third pipe opening; A third circuit board is inserted through the fourth tube opening and connected to the lithium niobate chip; A first filter is located above the light emitting device and is used to reflect the high-power light emitted by the light emitting device to the lithium niobate chip; Lithium niobate chip, including substrate and lithium niobate film, with optical loss less than 10dB; Lithium niobate thin film, laid on the substrate, with a thickness of less than 100 μm; a second lens, located between the lithium niobate chip and the second filter; The third filter is located between the second filter and the light receiving device and is used for filtering light.

2. The optical module according to claim 1, wherein The transceiver housing includes a transceiver socket and an upper cover; The transceiver socket and the upper cover body form a transceiver cavity; the transceiver socket is provided with a clamping groove, a storage protrusion, a first storage cavity and a second storage cavity; The clamping groove is located on the top surface of the transceiver socket; The clamping groove is more recessed relative to the top surface of the transceiver socket, and the clamping groove is engaged with the upper cover; The storage protrusion is located in the transceiver cavity; the lithium niobate chip and the second lens are arranged on the storage protrusion; The first storage cavity is connected to the first pipe opening; the first storage cavity is provided with a first supporting surface; The first optical filter is bonded to the first supporting surface; The second storage cavity is connected to the second pipe opening and the third pipe opening; the second storage cavity is not connected to the first storage cavity, and the second storage cavity is provided with a support member and a second support surface; The third filter is bonded to the support member; The second supporting surface is more recessed than the supporting member; the second filter is bonded to the second supporting surface, and the second supporting surface is arranged parallel to the first supporting surface.

3. The optical module according to claim 2, wherein: The fourth pipe opening includes a first sub-pipe opening and a second sub-pipe opening; The first sub-tube opening is more recessed than the second sub-tube opening and has an L-shape, and is used for inserting the third circuit board; The second sub-tube opening is located above the third circuit board.

4. The optical module according to claim 2, wherein: The upper cover body includes an upper cover body bottom plate and an upper cover body side plate; The bottom plate of the upper cover body is arranged corresponding to the clamping groove and is clamped on the clamping groove; The side plates of the upper cover body are arranged corresponding to the area of ​​the fourth pipe opening excluding the first sub-pipe opening and the second sub-pipe opening, and are L-shaped.

5. The optical module according to claim 2, wherein: The light emitting device includes a emitting tube cap and a emitting tube base; The transmitting tube cap is covered on the transmitting tube base; a light window is provided on the top of the transmitting tube cap; The light window is used to emit the high-power light emitted by the laser chip; The transmitting tube base is provided with a TEC on the top; The TEC is provided with a first ceramic substrate and an emission turning prism; The first ceramic substrate is provided with the laser chip and the thermistor; The thermistor is used to monitor the temperature change of the laser chip; The emission turning prism is provided with a lens substrate; The first lens is arranged on a side surface of the lens substrate.

6. The optical module according to claim 1, wherein: The second filter may include two 45° prisms, the hypotenuses of the two 45° prisms are bonded together, and one of the hypotenuses is coated with a filter film; or it may include only one glass sheet, wherein the end of the glass sheet facing the optical fiber is coated with a filter film.

7. The optical module according to claim 1, wherein: The first lens may be a focusing lens; or a collimating lens and a focusing lens.

8. The optical module according to claim 1, wherein: The optical receiving device includes a receiving tube cap and a receiving tube base; The receiving tube cap is covered on the receiving tube base and is inlaid with the third lens; The receiving tube seat has the light receiving chip arranged on the top.

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