Optimized transfer method of a chip mass transfer apparatus

Abstract

The application discloses a kind of optimization transfer method of chip mass transfer equipment, including the first chip positioning alignment of control wafer film to the first pedestal on substrate, and complete transfer;Again in the substrate area currently covered by wafer film, according to the principle of nearest distance, find the chip currently closest to the position of second pedestal on substrate, and the chip is transferred to second pedestal;After completing the transfer of chip to the second pedestal on substrate, find the chip currently closest to the position of third pedestal on substrate again, and the chip is transferred to third pedestal;Repeat the above steps until the substrate in the substrate area currently covered by wafer film is all completed transfer;Control wafer film is positioned to the next untransferred area on substrate according to preset direction long distance movement, repeat the above action, complete the transfer of whole substrate.The application is widely applicable, specifically for wafer film and die bonding head along the system of coordinate XYZ direction movement can be applicable.

Description

Technical Field

[0001] This invention relates to the field of semiconductor electronic packaging technology, and in particular to an optimized transfer method for chip mass transfer equipment. Background Technology

[0002] The development of display panel technology and products has placed higher demands on the transfer accuracy and efficiency of chip / die bonding equipment in the LCD panel field. Transfer methods that move densely packed semiconductor devices to numerous dispersed target locations are a key technology for mass transfer equipment in the semiconductor packaging field.

[0003] Existing transfer methods mainly involve sequentially transferring chips, moving the chips arranged in an array on the crystal film to a substrate in turn. The disadvantages are that the crystal film travels a long distance and the transfer efficiency is low. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the existing technology. To achieve the above objective, an optimized transfer method for a chip mass transfer device is adopted to solve the problems mentioned in the background technology.

[0005] An optimized transfer method for a chip mass transfer device, the optimized transfer method comprising:

[0006] After the first chip of the control crystal film is positioned and aligned with the first base on the substrate, and the transfer is completed;

[0007] Then, within the substrate area currently covered by the crystal film, based on the principle of closest proximity, find the chip that is currently closest to the second base position on the substrate, and transfer that chip to the second base;

[0008] After completing the transfer of the chip from the second base on the substrate, locate the chip that is currently closest to the third base on the substrate and transfer that chip to the third base;

[0009] Repeat the above steps until the entire substrate area currently covered by the crystal film has been transferred;

[0010] The control crystal film moves a long distance according to a preset direction and is positioned to the next untransferred area on the substrate. The above actions are repeated to complete the transfer of the entire substrate.

[0011] As a further aspect of the present invention: when the distance between the chip closest to the current base position and the current base exceeds a preset threshold, the current base is skipped and not transferred. After the bases on the entire substrate have been transferred, the chip is transferred to the current base individually.

[0012] As a further aspect of the present invention: the control crystal film moves a long distance according to a preset direction to be positioned to the next untransferred area on the substrate, and the above actions are repeated to complete the transfer of the entire substrate. The specific steps include:

[0013] After all the substrates in the current substrate area covered by the crystal film have been transferred, the crystal film is controlled to move a long distance along a preset direction to the next untransferred area on the substrate. The preset direction is the X or Y direction of the preset coordinate system.

[0014] Then align the next chip and the next substrate of the crystal film in the next untransferred region in the XY direction of the preset coordinate system;

[0015] Repeat the above steps until all the bases on the substrate in the current preset direction have been transferred;

[0016] Then, control the crystal film to move a long distance along another preset direction and position it to the next untransferred area on the substrate. Align the next chip of the crystal film with the next base in the XY direction of the preset coordinate system. Repeat the above actions until the transfer of the entire substrate is completed.

[0017] As a further aspect of the present invention: when the substrate transfer direction within the crystal film coverage area is inconsistent with the preset direction of long-distance crystal film movement, a chip reserved area is set on the crystal film.

[0018] Compared with the prior art, the present invention has the following technical advantages:

[0019] By employing the above technical solution, the crystal film is moved in a preset direction, and within the covered area, the chip and substrate are transferred according to the principle of proximity. The method of this invention reduces the total distance the crystal film moves, achieving high-efficiency and high-precision mass chip transfer. Attached Figure Description

[0020] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings:

[0021] Figure 1 This is a schematic diagram illustrating the steps of the optimized transfer method according to an embodiment of this application;

[0022] Figure 2 This is a schematic diagram illustrating the configuration of a mass transfer system according to an embodiment of this application;

[0023] Figure 3 This is a schematic diagram illustrating the chip selective transfer based on the nearest distance principle according to an embodiment of this application;

[0024] Figure 4 This is a diagram showing the transfer path of the Y-direction transferred crystal film to the X-direction moving entire substrate according to an embodiment of this application.

[0025] Figure 5 This is a diagram showing the Y-axis transfer path of the entire substrate in the Y-axis movement of the Y-axis transfer crystal film according to an embodiment of this application.

[0026] Figure 6 This is a diagram showing the Y-axis transfer path of the entire substrate in the Y-axis movement of the Y-axis transfer crystal film according to an embodiment of this application.

[0027] Figure 7 This is a diagram showing the transfer path of the entire substrate along the Y direction of the X-direction transfer of the crystal film, as disclosed in this application.

[0028] Figure 8 This is a diagram showing the X-direction transfer path of the entire substrate in the X-direction movement of the X-direction transfer crystal film, as disclosed in this application.

[0029] Figure 9 This is a diagram showing the X-direction transfer path of the entire substrate in the X-direction movement of the X-direction transfer crystal film, as disclosed in this application.

[0030] Figure 10 This is a schematic diagram illustrating the movement distance exceeding the limit according to an embodiment of this application;

[0031] Figure 11 A supplementary path diagram for determining the base path based on the nearest distance principle in the embodiments disclosed in this application;

[0032] Figure 12 This is an S-shaped re-printing path diagram of an embodiment disclosed in this application;

[0033] Figure 13 This is a diagram showing the chip transfer path for the reserved area in an embodiment of this application. Detailed Implementation

[0034] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] Please refer to Figure 1 In this embodiment of the invention, an optimized transfer method for a chip mass transfer device is provided, the optimized transfer method comprising:

[0036] S1. After the first chip of the control crystal film is positioned and aligned with the first base on the substrate and the transfer is completed;

[0037] S2. Then, within the substrate area currently covered by the crystal film, based on the principle of closest distance, find the chip that is currently closest to the second base position on the substrate, and transfer the chip to the second base.

[0038] S3. After completing the transfer of the chip from the second base on the substrate, find the chip that is currently closest to the third base on the substrate and transfer that chip to the third base.

[0039] S4. Repeat the above steps until all the substrates in the current substrate area covered by the crystal film have been transferred.

[0040] S5. Control the crystal film to move a long distance according to the preset direction and position it to the next untransferred area on the substrate. Repeat the above actions to complete the transfer of the entire substrate.

[0041] In this embodiment, as Figure 2 As shown, the crystal film covers a certain number of substrates on the substrate in the X and Y directions. The first chip of the crystal film is positioned and aligned with the first substrate on the substrate. After the transfer of the first chip is completed, within the substrate area currently covered by the crystal film, in a certain direction (X or Y direction), according to the principle of closest proximity, the chip closest to the second substrate on the substrate is found and transferred to the second substrate. Because the distance between the chip and the substrate is short, the movement distance and time for aligning the chip with the substrate are very small. Similarly, after transferring the chip closest to the second substrate on the substrate, the chip closest to the third substrate on the substrate is found and transferred to the third substrate, and so on, until all substrates within the substrate area covered by the transferred crystal film are transferred through a series of small-distance movements of the crystal film. Figure 3 As shown in the diagram, the chip is preferentially transferred according to the principle of proximity.

[0042] In the Y direction, according to the principle of shortest distance, such as Figure 4 , Figure 5 and Figure 6 As shown in the diagram, the chip closest to the base is transferred to the base. Specifically, Figure 4 This diagram illustrates the transfer path of the entire substrate along the X-axis, based on the principle of shortest distance for transferring the crystalline film in the Y-axis. Figure 5 This is a diagram showing the Y-axis movement path of the entire substrate, where the transfer direction of the base in the next covered substrate area is the same as the transfer direction of the previous covered area. Figure 6 This is a diagram showing the Y-axis transfer path of the entire substrate, where the transfer direction of the substrate in the next covered area is opposite to that of the previous covered area.

[0043] In the X direction, following the principle of shortest distance, such as... Figure 7 , Figure 8 and Figure 9 As shown, the chip closest to the base is transferred to the base. Specifically, Figure 7 This diagram illustrates the transfer path of the entire substrate along the Y-axis, based on the principle of shortest distance for transferring the crystalline film in the X-axis. Figure 8 This is a diagram showing the X-axis transfer path of the entire substrate, where the transfer direction of the base in the next covered substrate area is the same as the transfer direction of the previous covered area. Figure 9 This is a diagram showing the X-axis transfer path of the entire substrate, where the transfer direction of the substrate in the next covered area is opposite to that of the previous covered area.

[0044] During the chip selection process based on proximity, if the distance between the chip closest to the next substrate and its alignment exceeds a certain value, the next substrate is skipped. The process continues until a suitable chip is found or the chip extends beyond the film coverage area. Figure 10 As shown in the figure, the movement distance from the nearest chip to the next base exceeds the limit.

[0045] After transferring the bases on the entire substrate according to the principle of proximity, transfer the skipped bases, such as... Figure 11 As shown.

[0046] In a specific implementation of this embodiment, taking the Y-axis transfer based on the shortest distance principle as an example, after all the substrate bases within the substrate area covered by the crystal film have been transferred, the crystal film moves a long distance along the X-axis, approximately one substrate spacing, and is positioned to the next adjacent untransferred area on the substrate. Figure 4 As shown.

[0047] Move along the Y-axis a long distance equal to the length of the substrate area covered by the crystal film, and position yourself to the next adjacent untransferred area on the substrate, such as... Figure 5 and Figure 6 As shown.

[0048] Specifically, such as Figure 5 As shown in the diagram, the transfer direction of the substrate in the next covered substrate region is the same as the transfer direction of the substrate in the previous covered substrate region. Figure 6 As shown, the transfer directions are opposite.

[0049] Taking the Y-axis transfer of the die film along the X-axis based on the principle of shortest distance as an example, after all the substrate bases within the die film-covered substrate area have been transferred, the die film moves along the X-axis by one base spacing, aligning the next chip of the die film with the first base of the next untransferred area adjacent to it in the X-axis. At this point, the die film continues to cover the same number of bases in the Y-axis. The transfer path planning method for the next die film-covered substrate area is the same as above, but the transfer direction is opposite to the transfer direction of the bases in the previously covered substrate area. This minimizes the movement distance of the die bonding head and increases transfer efficiency. This process continues until there are no untransferred areas in the X-axis of the substrate. The die film then moves along the Y-axis by the length of one die film-covered substrate area, aligning the next chip with the first base of the next untransferred area adjacent to it in the Y-axis. The transfer path planning method for the die film-covered substrate area is the same as above, and the above actions are repeated. Overall, the die film transfers the entire substrate in an S-shaped path, and the entire substrate transfer path is as follows: Figure 4 As shown. The Y-axis transfer of the crystalline film follows the principle of shortest distance, and the entire substrate transfer path is as follows. Figure 5 and Figure 6 As shown. Figure 7 As shown, the crystalline film is transferred along the X-axis based on the principle of shortest distance, and the Y-axis moves along the same path, representing the entire substrate transfer path. Figure 8 and Figure 9 The X-axis is used to transfer the crystal film according to the principle of shortest distance, which is the transfer path of the entire substrate.

[0050] The transfer path for skipped bases is dynamically adjusted based on their location distribution, and may be determined by the base path selected based on the principle of closest distance. Figure 11 As shown, the re-laying path, determined by the base path transferred according to the principle of shortest distance, may also be an S-shaped path, such as... Figure 12 As shown.

[0051] In this embodiment, when the substrate transfer direction within the crystal film coverage area is inconsistent with the preset direction of long-distance crystal film movement, a chip reservation area is set on the crystal film. The substrate transfer direction refers to the direction within the crystal film coverage area where the transfer is based on the principle of shortest distance.

[0052] In this process, a chip reservation area is set on the crystal film. When the number of chips in the reservation area meets certain conditions, the number of pedestals in the substrate area covered by the crystal film increases by one. Chips in the reservation area can then be transferred according to the nearest-distance principle, but the number of pedestals skipped will increase. By increasing the number of skipped pedestals, the number of chips transferred according to the nearest-distance principle can be increased, and the number of crystal film movements may also decrease, thus improving transfer efficiency. Figure 13 As shown, the diagram illustrates the path for chips in the reserved area to be transferred according to the principle of proximity. When the number of chips in the reserved area does not meet certain conditions, the chips in the reserved area are transferred to the skipped base.

[0053] In this embodiment, the transfer method has a wide range of applications. Specifically, it can be applied to systems in which the crystal film and the die bonding head move along the XYZ coordinate direction. Based on the conventional dual-gantry platform structure, the structural innovation is combined with the idea of ​​macro-micro motion platform to further improve the transfer efficiency. It should be noted that the method of the present invention includes, but is not limited to, applications in dual-gantry platform structures.

[0054] Based on the dual-gantry platform, the gantry on one side of the die bonder is used as the macro motion platform, and one degree of freedom along the X or Y direction of the macro motion platform is added to the die bonder.

[0055] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention. The scope of the invention is defined by the appended claims and their equivalents, all of which should be included within the scope of protection of the invention.

Claims

1. An optimized transfer method for a chip massive transfer apparatus, characterized by, The optimized transfer method comprises: controlling the first chip of the crystal membrane to be positioned and aligned to the first base on the substrate, and completing the transfer; then, in the substrate area currently covered by the crystal membrane, searching for the chip closest to the second base on the substrate according to the principle of the closest distance, and transferring the chip to the second base; after completing the transfer of the chip closest to the second base on the substrate, searching for the chip closest to the third base on the substrate, and transferring the chip to the third base; repeating the above steps until the transfer of all the bases in the substrate area currently covered by the crystal membrane is completed; controlling the crystal membrane to be positioned to the next untransferred area on the substrate according to a preset direction, repeating the above actions, and completing the transfer of the entire substrate.

2. The optimized transfer method of a chip mass transfer apparatus according to claim 1, wherein, When the distance between the chip closest to the current base and the current base exceeds a preset threshold, the current base is skipped and the chip is transferred to the base after the transfer of all the bases on the substrate is completed.

3. The optimized transfer method of a chip mass transfer apparatus according to claim 1, wherein, The specific steps of controlling the crystal membrane to be positioned to the next untransferred area on the substrate according to a preset direction, repeating the above actions, and completing the transfer of the entire substrate comprise: after the transfer of all the bases in the current substrate area covered by the crystal membrane is completed, controlling the crystal membrane to be positioned to the next untransferred area on the substrate along a preset direction, wherein the preset direction is the X or Y direction of the preset coordinate system; then, aligning the next chip of the crystal membrane in the next untransferred area with the next base in the XY direction of the preset coordinate system; repeating the above steps until the transfer of all the bases on the substrate in the current preset direction is completed; then, controlling the crystal membrane to be positioned to the next untransferred area on the substrate along another preset direction, aligning the next chip of the crystal membrane with the next base in the XY direction of the preset coordinate system, and repeating the above actions until the transfer of the entire substrate is completed.

4. The optimized transfer method of a chip massive transfer apparatus according to claim 1, wherein, When the transfer direction of the bases in the area covered by the crystal membrane is inconsistent with the preset direction of the long-distance movement of the crystal membrane, a chip reservation area is provided on the crystal membrane.

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