Solar cell, method for manufacturing the same, photovoltaic module, and photovoltaic system

By providing a local passivation contact structure with spaced passivation contact portions and protrusions on the substrate surface of the solar cell, the problem of light absorption of passivation contact structures is solved, and the effect of improving the photogenerating current and efficiency of the solar cell is achieved.

CN118039708BActive Publication Date: 2025-06-27TRINA SOLAR CO LTD
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Patent Information

Application Number
CN202410267276.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-03-08
Publication Date
2025-06-27
Estimated Expiration
2044-03-08

AI Technical Summary

Technical Problem

The passivated contact structure of existing solar cells absorbs incident light, resulting in a decrease in photogenerating current and affecting the efficiency of solar cells.

Method used

A plurality of passivation contact portions arranged at intervals are provided on the first surface of the substrate, and protrusions are formed at the edges of the outer contours thereof to form a local passivation contact structure. This structure reduces the setting area of ​​the passivation contact material and the carrier flow distance, reduces the resistance loss, and improves the photogenerating current of the solar cell.

Benefits of technology

By reducing the absorption of incident light and reducing resistance loss, the photogenerating current and efficiency of solar cells are improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention relates to a solar cell, a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The solar cell includes: a substrate, the substrate includes a first surface; a plurality of passivated contact portions, the plurality of passivated contact portions are arranged at intervals, and a plurality of protruding portions protruding outward from the passivated contact portion are integrally formed at the edge of the outer contour of each passivated contact portion, and the passivated contact portion and the protruding portion are both disposed on the first surface of the substrate; and a passivation dielectric layer, which is stacked and covers the plurality of passivated contact portions; an electrode, which is stacked on the passivation dielectric layer, the electrode includes a plurality of fine grids, the plurality of fine grids are arranged in one-to-one correspondence with the plurality of passivated contact portions, and the plurality of fine grids all penetrate the passivation dielectric layer and are in ohmic contact with the corresponding passivated contact portion. The present invention can increase the photocurrent of the solar cell and improve the efficiency of the solar cell.
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Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and particularly to a solar cell, a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. Background Art

[0002] Most solar cells use amorphous silicon or polycrystalline silicon. Forming a passivation contact structure at the contact position between metal and silicon semiconductor is an effective means to reduce the recombination at the metal / semiconductor interface and improve the conversion efficiency of solar cells. However, most passivation contact structures, whether placed on the light-receiving surface or the backlight surface of the solar cell, will absorb incident light, resulting in a decrease in the photocurrent of the solar cell and affecting the efficiency of the solar cell. Summary of the Invention

[0003] Based on this, it is necessary to provide a solar cell, a manufacturing method thereof, a photovoltaic module, and a photovoltaic system that can increase the photocurrent of the solar cell and have a relatively high efficiency.

[0004] In the first aspect of the embodiments of the present application, a solar cell is provided, including:

[0005] A substrate, the substrate includes a first surface;

[0006] A plurality of passivation contact parts, the plurality of passivation contact parts are arranged at intervals, and the edge of the outer contour of each passivation contact part is integrally formed with a plurality of protruding parts protruding outward from the passivation contact part, and the passivation contact part and the protruding part are both arranged on the first surface of the substrate; and

[0007] A passivation dielectric layer, which is stacked and covered on the plurality of passivation contact parts;

[0008] An electrode, which is stacked on the passivation dielectric layer, the electrode includes a plurality of fine grids, the plurality of fine grids are arranged in one-to-one correspondence with the plurality of passivation contact parts, and the plurality of fine grids all penetrate the passivation dielectric layer and are in ohmic contact with the corresponding passivation contact parts.

[0009] In one embodiment, the passivation contact part is configured as a strip-shaped structure extending in a first direction, and the plurality of passivation contact parts are arranged at intervals in a second direction; each protruding part is arranged at a preset angle with respect to the passivation contact part to which it is connected;

[0010] Wherein, the first direction and the second direction are parallel to the first surface and perpendicular to each other.

[0011] In one embodiment, a plurality of protruding parts are arranged on both sides of each passivation contact part in the second direction;

[0012] The protruding parts arranged on both sides of the same passivation contact part in the second direction are arranged in one-to-one alignment in the first direction.

[0013] In one embodiment, the protrusions located between two adjacent passivation contact portions are arranged in alignment with each other in the first direction.

[0014] In one embodiment, among the protrusions located between two adjacent passivation contact portions, two of the protrusions arranged in alignment with each other have a gap in the second direction.

[0015] In one embodiment, the width dimension of the passivation contact portion in the second direction is 5 μm - 25 μm wider than the width dimension of the corresponding fine grid in the second direction.

[0016] In one embodiment, a plurality of main grids extending in the second direction are further provided on the passivation dielectric layer, the plurality of main grids are arranged at intervals in the first direction, and each main grid is electrically connected to all the fine grids.

[0017] In one embodiment, the passivation contact portion includes a metal compound layer, or a semiconductor layer, or a semiconductor compound layer; or

[0018] the passivation contact portion includes a stack of an oxide layer and a polysilicon doped conductive layer; or

[0019] the passivation contact portion includes a stack of an intrinsic amorphous silicon layer and a doped amorphous silicon layer.

[0020] A second aspect of the embodiments of the present application provides a method for manufacturing a solar cell, including:

[0021] Forming a passivation contact material layer on a first surface of a substrate;

[0022] Performing a patterning process on the passivation contact material layer to form a plurality of spaced-apart passivation contact portions, and forming a plurality of protrusions protruding outward from the passivation contact portion on the edge of the outer contour of each passivation contact portion;

[0023] Stacking and forming a passivation dielectric layer on the passivation contact portion;

[0024] Forming a plurality of fine grids on the passivation dielectric layer, the plurality of fine grids are arranged in one-to-one correspondence with the plurality of passivation contact portions, and the fine grids penetrate through the passivation dielectric layer and are in ohmic contact with the corresponding passivation contact portions.

[0025] In one embodiment, the method for performing a patterning process on the passivation contact material layer includes at least one of laser etching, chemical etching, or photolithography.

[0026] In one embodiment, the step of forming a plurality of fine grids on the passivation dielectric layer specifically includes:

[0027] A plurality of fine grids and a plurality of main grids are formed on the passivation dielectric layer. The plurality of fine grids extend in a first direction and are arranged at intervals in a second direction. The plurality of main grids extend in the second direction and are arranged at intervals in the first direction, wherein the first direction and the second direction are parallel to the first surface and perpendicular to each other.

[0028] A third aspect of the embodiments of the present application provides a photovoltaic module, including at least one battery string, and the battery string includes at least two of the above-mentioned solar cells.

[0029] A fourth aspect of the embodiments of the present application provides a photovoltaic system, including the above-mentioned photovoltaic module.

[0030] Advantages of the above-mentioned solar cell, its manufacturing method, photovoltaic module and photovoltaic system:

[0031] By providing a plurality of passivation contact parts arranged at intervals on the first surface of the substrate, it is equivalent to setting a local passivation contact structure on the substrate. Compared with the solution of setting passivation contact materials on the entire layer of the substrate, the setting area of the passivation contact materials is reduced, and the absorption of incident light is reduced, thereby improving the photocurrent of the solar cell and improving the efficiency of the solar cell.

[0032] In addition, by integrally constructing a protruding part at the edge of the outer contour of the passivation contact part, and the protruding part is also arranged on the first surface of the substrate, the generated carriers can be collected by the fine grid after passing through the protruding part and the passivation contact part. Compared with the situation where no protruding part is provided and the carriers are directly collected through the passivation contact part, the flow distance of the carriers is shortened, thereby reducing the resistance loss and further increasing the current. In other words, the negative impact of light absorption by the passivation contact structure is eliminated as much as possible, and the positive impact of reducing resistance loss is brought by the protruding part provided in the passivation contact structure. Description of the Drawings

[0033] Figure 1 It is a schematic structural diagram of the solar cell provided by the embodiments of the present application;

[0034] Figure 2 It is a top view structural diagram of the solar cell provided by the embodiments of the present application;

[0035] Figure 3 It is a top view structural diagram of another structure of the solar cell provided by the embodiments of the present application;

[0036] Figure 4 It is a schematic flow chart of the manufacturing method of the solar cell provided by the embodiments of the present application;

[0037] Figure 5 It is a schematic diagram of forming a passivation contact material layer on the substrate in the manufacturing method of the solar cell provided by the embodiments of the present application;

[0038] Figure 6 Schematic diagram of patterning the passivation contact material layer in the method for manufacturing a solar cell provided by an embodiment of the present application;

[0039] Figure 7 Schematic diagram of forming a passivation dielectric layer on the passivation contact portion in the method for manufacturing a solar cell provided by an embodiment of the present application;

[0040] Figure 8 Schematic diagram of forming fine grids on the passivation dielectric layer in the method for manufacturing a solar cell provided by an embodiment of the present application;

[0041] Figure 9 Schematic diagram of the corresponding relationship between the fine grids and the passivation contact portion formed in the method for manufacturing a solar cell provided by an embodiment of the present application;

[0042] Figure 10 Schematic diagram of the flow trend of carriers in the solar cell provided by an embodiment of the present application;

[0043] Figure 11 Schematic diagram of the flow trend of carriers in an example where the solar cell does not include a protrusion.

[0044] Explanation of the reference numerals in the drawings:

[0045] 100, solar cell; 10, substrate; 20, passivation contact portion; 21, protrusion; 22, oxide material layer; 23, polysilicon doped conductive material layer; 24, passivation contact material layer; 30, passivation dielectric layer; 40, electrode; 50, fine grid; 60, main grid;

[0046] F, first direction; S, second direction; D, first surface. Detailed implementation manners

[0047] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following will describe the detailed implementation manners of the present invention with reference to the accompanying drawings. Many specific details are set forth in the following description to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0048] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation on the present invention.

[0049] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0050] In the present invention, unless otherwise clearly specified and defined, the terms "mounted", "connected", "coupled", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0051] In the present invention, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0052] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation.

[0053] The solar cell, its manufacturing method, photovoltaic module and photovoltaic system according to the embodiments of the present application will be described below with reference to the accompanying drawings.

[0054] Figure 1 It is a schematic structural diagram of the solar cell provided by the embodiment of the present application, Figure 2 It is a top view structural diagram of the solar cell provided by the embodiment of the present application. Among them, Figure 2 In order to facilitate the observation of the structure of the electrode, the passivation dielectric layer is omitted.

[0055] Referring to Figure 1 , in the first aspect of the embodiment of the present application, a solar cell 100 is provided. The solar cell 100 includes a substrate 10, a plurality of passivation contact parts 20, a passivation dielectric layer 30 and an electrode 40.

[0056] The substrate 10 includes a first surface D. The plurality of passivation contact parts 20 are arranged at intervals, and a plurality of protrusions 21 protruding outward from the passivation contact part 20 are integrally formed at the edge of the outer contour of each passivation contact part 20. The passivation contact part 20 and the protrusions 21 are both arranged on the first surface D of the substrate 10. The passivation dielectric layer 30 is laminated and covered on the plurality of passivation contact parts 20. The electrode 40 is laminated on the passivation dielectric layer 30. The electrode 40 includes a plurality of fine grids 50. The plurality of fine grids 50 are arranged in one-to-one correspondence with the plurality of passivation contact parts 20, and the plurality of fine grids 50 all penetrate through the passivation dielectric layer 30 and are in ohmic contact with the corresponding passivation contact parts 20.

[0057] By arranging a plurality of passivation contact parts 20 arranged at intervals on the first surface D of the substrate 10, it is equivalent to arranging a local passivation contact structure on the substrate 10. Compared with the scheme of arranging passivation contact materials throughout the substrate 10, the area of the passivation contact materials is reduced, and the absorption of incident light is reduced, so that the photocurrent of the solar cell 100 can be increased, thereby improving the efficiency of the solar cell 100. In addition, by integrally arranging the protrusions 21 at the edge of the outer contour of the passivation contact part 20, the generated carriers can pass through the protrusions 21, the passivation contact part 20 and then be collected by the fine grids 50. Compared with the case where the protrusions 21 are not arranged and the carriers are directly collected through the passivation contact part 20, the flow distance of the carriers is shortened, so that the resistance loss can be reduced and the current can be further increased.

[0058] It should be noted that the solar cell 100 in the embodiments of the present application can be a TOPCon cell or an HJT cell. The structure of the plurality of passivation contact parts 20 provided on the substrate 10 can be applied to the front or back surface of the solar cell 100. In the embodiments of the present application, the case where the passivation contact part 20 is provided on the front surface of the TOPCon cell is taken as an example for illustration. The same applies to other types of cells, and details will not be described here.

[0059] In specific implementation, the passivation contact part 20 needs to have good conductivity. The surface topography of the first surface D includes but is not limited to a relatively flat polished surface, and can also be a pyramidal texture surface formed by alkaline texturing, or a surface formed by acidic texturing, etc.

[0060] The plurality of passivation contact parts 20 are used to contact the plurality of fine grids 50 of the electrode 40 one by one, which means that one fine grid 50 is correspondingly provided on each passivation contact part 20. The plurality of passivation contact parts 20 belong to the electrode contact structure, and the protruding part 21 is used to assist the carriers to flow towards the fine grid 50 and be collected by the fine grid 50. Specifically, the carriers are generated on the surface of the substrate 10, and then will flow into the external circuit to do work from the electrodes 40 such as the fine grid 50 and the main grid 60 along the path with the least resistance by themselves. Since the passivation contact part 20 and the protruding part 21 are made of the same material and their resistance is much smaller than that of the substrate 10, the carriers formed in the area outside the passivation contact part 20 will definitely find the protruding part 21 formed on the nearest passivation contact part 20, and then flow along the protruding part 21, the passivation contact part 20 to the fine grid 50 to be collected. Compared with the situation where the carriers directly flow from the substrate 10 to the passivation contact part 20 without the protruding part 21, the flow distance of the carriers is reduced, and the resistance loss can be reduced.

[0061] In the embodiments of the present application, the passivation dielectric layer 30 includes but is not limited to at least one of silicon nitride, silicon oxide, and aluminum oxide.

[0062] In the embodiments of the present application, continue to refer to Figure 2 , the passivation contact part 20 is configured as a strip-shaped structure extending along the first direction F, and the plurality of passivation contact parts 20 are arranged at intervals along the second direction S. Each protruding part 21 is arranged at a preset angle with respect to the passivation contact part 20 to which it is connected. Among them, the first direction F and the second direction S are parallel to the first surface D and perpendicular to each other.

[0063] Here, when the fine grid 50 is a strip-shaped structure extending along the first direction F, the passivation contact part 20 can be a strip-shaped structure corresponding to the shape of the fine grid 50, and the protruding part 21 can be perpendicular to the passivation contact part 20 to which it is connected, or can also be other included angles.

[0064] Further, a plurality of protruding portions 21 are provided on both sides of the second direction S of each passivation contact portion 20. The protruding portions 21 provided on both sides of the same passivation contact portion 20 along the second direction S are arranged in one-to-one alignment in the first direction F. Such an arrangement is conducive to further improving the carrier collection efficiency. Of course, in some embodiments, the protruding portions 21 provided on both sides of the same passivation contact portion 20 along the second direction S may also be arranged in a staggered manner in the first direction F.

[0065] Further, the protruding portions 21 located between any two adjacent passivation contact portions 20 are arranged in one-to-one alignment in the first direction F. Alternatively, in some other embodiments, the protruding portions 21 located between two adjacent passivation contact portions 20 may also be arranged in a completely staggered manner in the first direction F.

[0066] In the embodiment of the present application, among the protruding portions 21 located between two adjacent passivation contact portions 20, the two protruding portions 21 arranged in alignment with each other have a gap in the second direction S.

[0067] Figure 3 It is a top view structural schematic diagram of another structure of the solar cell 100 provided by the embodiment of the present application.

[0068] Referring to Figure 3 , in some embodiments, the two protruding portions 21 arranged in alignment with each other may also be directly connected. In this way, the protruding portions 21 aligned with each other on each passivation contact portion 20 can be connected into a strip-shaped structure extending along the second direction S.

[0069] In the embodiment of the present application, referring to Figure 2 , the width dimension of the passivation contact portion 20 along the second direction S is 5 μm - 25 μm wider than the width dimension of the corresponding fine grid 50 along the second direction S.

[0070] Such an arrangement is to ensure that each fine grid 50 can be reliably formed above the corresponding passivation contact portion 20, improve the carrier collection efficiency, and increase the contact area between the fine grid 50 and the passivation contact portion 20 as much as possible. In Figure 2 , taking the fine grid 50 being located in the middle of the second direction S of the corresponding passivation contact portion 20 as an example for illustration, the relative position of the fine grid 50 and the corresponding passivation contact portion 20 may also be as shown in 1, where the fine grid 50 is aligned with the edge of the second direction S of the corresponding passivation contact portion 20.

[0071] In some embodiments, the passivation contact portion 20 and the corresponding fine grid 50 may also completely coincide, that is, their width dimensions may also be the same.

[0072] In the embodiment of the present application, combining Figure 1 and Figure 2, a plurality of main grids 60 extending along the second direction S are further provided on the passivation dielectric layer 30. The plurality of main grids 60 are arranged at intervals along the first direction F, and each main grid 60 is electrically connected to all the fine grids 50. Of course, the solar cell 100 of the present application may also be a solar cell 100 without a main grid structure. In this case, the setting of the passivation contact portion 20 is similar, and will not be elaborated here.

[0073] In the embodiment of the present application, the passivation contact portion 20 includes a metal compound layer, or a semiconductor layer, or a semiconductor compound layer; or

[0074] the passivation contact portion 20 includes a stack of an oxide layer and a polysilicon doped conductive layer; or,

[0075] the passivation contact portion 20 includes a stack of an intrinsic amorphous silicon layer and a doped amorphous silicon layer.

[0076] Here, the metal compound layer may include molybdenum oxide, and the semiconductor compound layer may include perovskite and gallium arsenide. The oxide layer may be silicon dioxide.

[0077] Figure 4 is a schematic flow chart of a method for manufacturing a solar cell provided by an embodiment of the present application; Figure 5 is a schematic diagram of forming a passivation contact material layer on a substrate in the method for manufacturing a solar cell provided by an embodiment of the present application; Figure 6 is a schematic diagram of patterning a passivation contact material layer in the method for manufacturing a solar cell provided by an embodiment of the present application; Figure 7 is a schematic diagram of forming a passivation dielectric layer on a passivation contact portion in the method for manufacturing a solar cell provided by an embodiment of the present application; Figure 8 is a schematic diagram of forming fine grids on a passivation dielectric layer in the method for manufacturing a solar cell provided by an embodiment of the present application; Figure 9 is a schematic diagram of the corresponding relationship between the fine grids and the passivation contact portion formed in the method for manufacturing a solar cell provided by an embodiment of the present application; Figure 10 is a schematic diagram of the flow trend of carriers in the solar cell provided by an embodiment of the present application; Figure 11 is a schematic diagram of the flow trend of carriers in an example where the solar cell does not include a protruding portion.

[0078] Referring to Figure 4 , a second aspect of the embodiment of the present application provides a method for manufacturing a solar cell, which is used to manufacture the solar cell 100 in the above embodiment.

[0079] The method for manufacturing a solar cell in the embodiment of the present application includes:

[0080] S10. Form a passivation contact material layer on the first surface of the substrate;

[0081] S20. Pattern the passivation contact material layer to form a plurality of passivation contact portions arranged at intervals, and form a plurality of protrusions protruding outward from the passivation contact portion on the edge of the outer contour of each passivation contact portion;

[0082] S30. Stack a passivation dielectric layer on the passivation contact portion;

[0083] S40. Form a plurality of fine grids on the passivation dielectric layer. The plurality of fine grids are arranged in one-to-one correspondence with the plurality of passivation contact portions, and the fine grids penetrate the passivation dielectric layer and are in ohmic contact with the corresponding passivation contact portions.

[0084] By patterning the passivation contact material layer 24, that is, removing part of the material in the entire passivation contact material layer 24, compared with the solution where the entire substrate 10 is provided with the passivation contact material layer 24, the setting area of the passivation contact material on the substrate 10 is reduced, and the absorption of incident light is reduced, thereby improving the photocurrent of the solar cell 100 and improving the efficiency of the solar cell 100. In addition, by forming protrusions 21 on the edge of the outer contour of the passivation contact portion 20, the carriers generated in the substrate 10 can pass through the protrusions 21 and the passivation contact portion 20 and then be collected by the fine grid 50. Compared with the case where the protrusions 21 are not provided and the carriers are directly collected through the passivation contact portion 20, the flow distance of the carriers is shortened, thereby reducing the resistance loss and further increasing the current.

[0085] And patterning the passivation contact material layer 24 is actually to selectively remove part of the area of the passivation contact material layer 24. The removal methods include but are not limited to at least one of laser etching, chemical etching, and photolithography.

[0086] Further, in step S40, the step of forming a plurality of fine grids 50 on the passivation dielectric layer 30 specifically includes:

[0087] Form a plurality of fine grids 50 and a plurality of main grids 60 on the passivation dielectric layer 30. The plurality of fine grids 50 extend along the first direction F and are arranged at intervals along the second direction S. The plurality of main grids 60 extend along the second direction S and are arranged at intervals along the first direction F. Among them, the first direction F and the second direction S are parallel to the first surface D and perpendicular to each other.

[0088] The following combines a specific example to illustrate the manufacturing method of the solar cell of the present application. This method includes the following steps:

[0089] Step 1. Refer to Figure 5, a passivation contact material layer 24 with good conductivity is formed on the first surface D of the semiconductor substrate 10. The passivation contact material layer 24 includes, but is not limited to, a stack of an oxide material layer 22 / polycrystalline silicon doped conductive material layer 23, a metal compound layer, a semiconductor or semiconductor compound layer. The topography of the first surface D of the semiconductor substrate 10 is not limited to a relatively flat polished surface, and may also be an alkaline textured pyramid texture surface, an acid textured surface, etc.

[0090] Step two, referring to Figure 6 , the passivation contact material layer 24 is patterned, that is, the passivation contact material layer 24 is selectively removed to form a plurality of spaced-apart passivation contact portions 20, and a plurality of protrusions 21 protruding outward from the passivation contact portion 20 are formed at the edge of the outer contour of each passivation contact portion 20. In other words, the regions of the passivation contact material layer 24 that are not removed and remain include two parts according to their functions, namely, the passivation contact portions 20 for contacting the electrode 40, and the protrusions 21 for lateral conduction. Here, the method for patterning the passivation contact material layer 24 includes, but is not limited to, screen printing, laser etching, chemical etching, photolithography, or a combination of the above means.

[0091] Step three, referring to Figure 7 , a whole passivation dielectric layer 30 is laminated on the passivation contact portion 20, and the passivation dielectric layer 30 covers the passivation contact portion 20. Here, the passivation dielectric layer 30 includes, but is not limited to, silicon nitride, silicon oxide, aluminum oxide, etc., and can play a role in passivation or antireflection.

[0092] Step four, referring to Figure 8 、 Figure 9 , a plurality of fine grids 50 are formed on the passivation dielectric layer 30. The plurality of fine grids 50 are arranged in one-to-one correspondence with the plurality of passivation contact portions 20, and the fine grids 50 penetrate through the passivation dielectric layer 30 and are in ohmic contact with the corresponding passivation contact portions 20. For example, metal paste can be printed on the passivation dielectric layer 30, and then sintered to make the metal paste pass through the passivation dielectric layer 30 and be in ohmic contact with the passivation contact portion 20.

[0093] Referring to Figure 10 、 Figure 11 , in Figure 11 's embodiment, the protrusions 21 are not provided, and the flow direction of the carriers is as shown by the arrow in Figure 11 . During the process of the carriers flowing towards the passivation contact portion 20 and being collected, the resistance loss of lateral conduction is relatively large. While in the embodiment shown in Figure 10 , as shown by the arrow in Figure 10 , the protrusions 21 provided on the passivation contact portion 20 are equivalent to the lateral conduction part, effectively shortening the flow distance of the carriers, thereby reducing the resistance loss.

[0094] In the third aspect of the embodiments of the present application, a photovoltaic module is further provided, which includes at least one battery string, and the battery string includes at least two of the aforementioned solar cells 100. The solar cells 100 can be connected together by string soldering.

[0095] In the fourth aspect of the embodiments of the present application, a photovoltaic system is further provided, which includes the above-mentioned photovoltaic module.

[0096] The photovoltaic system can be applied in a photovoltaic power station, such as a ground power station, a rooftop power station, a water surface power station, etc., and can also be applied to devices or apparatuses that use solar energy for power generation, such as a user solar power supply, a solar street lamp, a solar vehicle, a solar building, etc. Of course, it can be understood that the application scenarios of the photovoltaic system are not limited to this, that is to say, the photovoltaic system can be applied in all fields that require solar power generation. Taking a photovoltaic power generation system network as an example, the photovoltaic system can include a photovoltaic array, a busbar trunking box, and an inverter. The photovoltaic array can be an array combination of multiple photovoltaic modules. For example, multiple photovoltaic modules can form multiple photovoltaic arrays. The photovoltaic array is connected to the busbar trunking box, and the busbar trunking box can converge the current generated by the photovoltaic array. The converged current flows through the inverter and is converted into alternating current required by the commercial power grid and then connected to the commercial power grid to achieve solar power supply.

[0097] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0098] The above-described embodiments only express several implementation manners of the present invention, and the description thereof is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the present invention patent shall be subject to the appended claims.

Claims

1. A solar cell, characterized in that: include: a substrate comprising a first surface; A plurality of passivation contact portions, wherein the plurality of passivation contact portions are arranged at intervals, and the edge of the outer contour of each of the passivation contact portions is integrally constructed with a plurality of protrusions protruding outward of the passivation contact portion, and the passivation contact portions and the protrusions are both arranged on the first surface of the substrate; a passivation dielectric layer, stacked and covering the plurality of passivation contact portions; and An electrode, stacked on the passivation dielectric layer, the electrode comprising a plurality of fine grids, the plurality of fine grids being arranged in one-to-one correspondence with the plurality of passivation contact portions, and the plurality of fine grids all penetrate the passivation dielectric layer and are in ohmic contact with the corresponding passivation contact portions; The plurality of passivation contacts are arranged at intervals along the second direction; a plurality of protrusions are provided on both sides of each passivation contact in the second direction; the protrusions between two adjacent passivation contacts are arranged one by one in the first direction; when the solar cell is viewed from above, the protrusions are rectangular in shape, and the protrusions are perpendicular to the passivation contacts to which they are connected; The two protrusions arranged in alignment with each other are directly connected, so that the protrusions on each of the passivation contact portions that are aligned with each other are connected into a long strip structure extending along the second direction; The first direction and the second direction are parallel to the first surface and perpendicular to each other.

2. The solar cell according to claim 1, characterized in that The passivation contact portion is configured as a long strip structure extending along the first direction.

3. The solar cell according to claim 2, characterized in that: The protrusions arranged on both sides of the same passivation contact portion along the second direction are arranged one by one in alignment in the first direction.

4. The solar cell according to claim 2 or 3, characterized in that: The width of the passivation contact along the second direction is 5 μm-25 μm wider than the width of the corresponding fine gate along the second direction.

5. The solar cell according to claim 2 or 3, characterized in that: A plurality of main gates extending along the second direction are also provided on the passivation dielectric layer. The plurality of main gates are arranged at intervals along the first direction, and each of the main gates is electrically connected to all of the fine gates.

6. The solar cell according to any one of claims 1 to 3, characterized in that: The passivation contact comprises a metal compound layer, a semiconductor layer, or a semiconductor compound layer; or The passivation contact comprises a stack of an oxide layer and a polysilicon doped conductive layer; or The passivation contact includes a stack of an intrinsic amorphous silicon layer and a doped amorphous silicon layer.

7. A method for manufacturing a solar cell, characterized in that: include: forming a passivation contact material layer on the first surface of the substrate; Patterning the passivation contact material layer to form a plurality of passivation contacts disposed at intervals, and forming a plurality of protrusions protruding toward the outside of the passivation contact at the edge of the outer contour of each passivation contact; forming a passivation dielectric layer on the passivation contact portion; Forming a plurality of fine gates on the passivation dielectric layer, the plurality of fine gates being arranged in one-to-one correspondence with the plurality of passivation contact portions, and the fine gates penetrating the passivation dielectric layer and being in ohmic contact with the corresponding passivation contact portions; The plurality of passivation contacts are arranged at intervals along the second direction; a plurality of protrusions are provided on both sides of each passivation contact in the second direction; the protrusions between two adjacent passivation contacts are arranged one by one in the first direction; when the solar cell is viewed from above, the protrusions are rectangular in shape, and the protrusions are perpendicular to the passivation contacts to which they are connected; The two protrusions arranged in alignment with each other are directly connected, so that the protrusions on each of the passivation contact portions that are aligned with each other are connected into a long strip structure extending along the second direction; The first direction and the second direction are parallel to the first surface and perpendicular to each other.

8. The method for manufacturing a solar cell according to claim 7, characterized in that: The method of patterning the passivation contact material layer includes: at least one of laser etching, chemical etching, or photolithography.

9. The method for manufacturing a solar cell according to claim 7, characterized in that: The step of forming a plurality of fine gates on the passivation dielectric layer specifically includes: A plurality of fine gates and a plurality of main gates are formed on the passivation dielectric layer, wherein the plurality of fine gates extend along the first direction and are arranged at intervals along the second direction, and the plurality of main gates extend along the second direction and are arranged at intervals along the first direction.

10. A photovoltaic module, characterized in that: The invention comprises at least one battery string, wherein the battery string comprises at least two solar cells according to any one of claims 1 to 6.

11. A photovoltaic system, characterized in that: The invention comprises the photovoltaic module as claimed in claim 10.

Citation Information

Patent Citations

  • Patterned passivation contact solar cell and manufacturing method thereof

    CN112164728A