An adjustable phase shifter, its manufacturing method and electronic equipment

Abstract

This disclosure provides an adjustable phase shifter, a method for manufacturing the same, and an electronic device. The adjustable phase shifter includes: a first substrate and a second substrate disposed opposite to each other; an adjustable dielectric layer disposed between the first substrate and the second substrate; a first electrode located on the side of the first substrate facing the adjustable dielectric layer; and a second electrode located on the side of the second substrate facing the adjustable dielectric layer. The overlapping area of ​​the first electrode and the second electrode forms an adjustable capacitor. The first electrode has a decreasing cross-sectional area along a direction away from the first substrate, parallel to the plane of the first substrate; and the second electrode has a decreasing cross-sectional area along a direction away from the second substrate, parallel to the plane of the second substrate.

Description

Technical Field

[0001] This disclosure relates to the field of communication technology, and in particular to an adjustable phase shifter, its manufacturing method, and an electronic device thereof. Background Technology

[0002] Thanks to advancements in new materials, processes, and algorithms, phase shifters have gradually demonstrated unique advantages such as compact structure, low cost, and reconfigurability, leading to their widespread application. For liquid crystal phase shifters, liquid crystal capacitors can be periodically introduced, and the dielectric constant of the liquid crystal layer can be adjusted by controlling the liquid crystal orientation, thereby regulating the total capacitance per unit length of the branch and achieving phase shifting. Improving the phase shifting performance of phase shifters has become an urgent technical problem to be solved. Summary of the Invention

[0003] This disclosure provides an adjustable phase shifter, its manufacturing method, and an electronic device thereof, the specific solutions of which are as follows:

[0004] This disclosure provides an adjustable phase shifter, comprising:

[0005] A first substrate and a second substrate arranged opposite to each other;

[0006] An adjustable dielectric layer disposed between the first substrate and the second substrate;

[0007] The first electrode is located on the side of the first substrate facing the tunable dielectric layer;

[0008] A second electrode is located on the side of the second substrate facing the adjustable dielectric layer, and the overlapping area of ​​the first electrode and the second electrode forms an adjustable capacitor;

[0009] Specifically, along the direction away from the first substrate, the cross-sectional area of ​​the first electrode along the plane parallel to the first substrate decreases; along the direction away from the second substrate, the cross-sectional area of ​​the second electrode along the plane parallel to the second substrate decreases.

[0010] Optionally, in this embodiment of the present disclosure, the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction is trapezoidal, and the length of the bottom side of the corresponding cross-sectional shape that contacts the corresponding substrate is greater than the length of the top side.

[0011] Optionally, in an embodiment of this disclosure, the angle between the two sides and the bottom edge of the cross-sectional shape of at least one of the first electrode and the second electrode along the corresponding thickness direction is the same.

[0012] Optionally, in the embodiments of this disclosure, the range of the angles is (0°, 90°).

[0013] Optionally, in this embodiment of the present disclosure, the first electrode and the second electrode are arranged in an arc shape along the side of the cross-sectional shape in the corresponding thickness direction, and the arc shape is recessed towards the center of the corresponding cross-sectional shape.

[0014] Optionally, in this embodiment of the disclosure, the corresponding side edges and top edges of the cross-sectional shapes of the first electrode and the second electrode along the corresponding thickness direction are chamfered.

[0015] Optionally, in this embodiment of the disclosure, the capacitance value of the adjustable capacitor is:

[0016]

[0017] Where C1 represents the capacitance value of the adjustable capacitor, ε0 represents the vacuum permittivity, and ε r Let L represent the relative permittivity, L represent the extension length of the first electrode and the second electrode, L1 represent the length of the top edge of the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction, L2′ represent the length of the bottom edge of the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction, D1 represent the distance between the two top edges of the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction in the overlapping region, and D2 represent the distance between the two bottom edges of the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction in the overlapping region.

[0018] Optionally, in an embodiment of this disclosure, the first electrode includes a first signal electrode and a second signal electrode that are intermittently disposed, and the second electrode includes a first patch electrode attached to the side of the second substrate facing the adjustable dielectric layer. The orthographic projections of the first signal electrode and the second signal electrode on the first substrate at least partially overlap with the orthographic projections of the first patch electrode on the first substrate, forming the adjustable capacitor.

[0019] Optionally, in an embodiment of this disclosure, the first electrode includes a first main body extending along a first direction and a plurality of first branches connected to the first main body and extending along a second direction intersecting the first direction; the second electrode includes a second main body extending along the first direction and a plurality of second branches connected to the second main body and extending along the second direction; the first branches and corresponding second branches at least partially overlap to form the adjustable capacitor.

[0020] Optionally, in this embodiment of the present disclosure, the first electrode includes a plurality of intermittently arranged first ground electrodes. Each first ground electrode is coupled to a second ground electrode disposed on the side of the first substrate away from the adjustable dielectric layer through a through-hole penetrating the thickness direction of the first substrate. The orthographic projection of each first ground electrode on the first substrate completely falls within the area of ​​the orthographic projection of the second ground electrode on the first substrate. The orthographic projection of each first ground electrode on the first substrate at least partially overlaps with the orthographic projection of the first patch electrode on the first substrate, forming the adjustable capacitor.

[0021] Optionally, in this embodiment of the present disclosure, the first electrode includes a plurality of third ground electrodes disposed intermittently and a third signal electrode located between two adjacent third ground electrodes, and the second electrode includes a plurality of second patch electrodes disposed intermittently. The orthographic projections of each third ground electrode and the third signal electrode on the first substrate at least partially overlap with the orthographic projections of the corresponding second patch electrode on the first substrate, forming the adjustable capacitor.

[0022] Optionally, in an embodiment of this disclosure, the first electrode includes a fourth ground electrode and a fourth signal electrode, the fourth ground electrode includes a first sub-ground electrode and a second sub-ground electrode spaced apart, the fourth signal electrode is located between the first sub-ground electrode and the second sub-ground electrode, and the second electrode includes a plurality of third patch electrodes spaced apart;

[0023] The fourth signal electrode includes a third main body extending along a third direction, and a plurality of third branches connected to the third main body and extending along a fourth direction intersecting the third direction.

[0024] The first sub-ground electrode includes a fourth main body extending along the third direction, and a plurality of fourth branches connected to the fourth main body and extending along the fourth direction;

[0025] The second sub-ground electrode includes a fifth main body extending along the third direction, and a plurality of fifth branches connected to the fifth main body and extending along the fourth direction;

[0026] The orthographic projection of each of the third patch electrodes on the first substrate at least partially overlaps with the orthographic projections of the corresponding third branch, fourth branch and fifth branch on the first substrate to form the adjustable capacitor.

[0027] Optionally, in this embodiment of the present disclosure, the first electrode includes a plurality of fifth ground electrodes spaced apart and a fifth signal electrode located between two adjacent fifth ground electrodes, and the second electrode includes a fourth patch electrode attached to the side of the second substrate facing the adjustable dielectric layer. The orthographic projections of each of the fifth ground electrodes and the fifth signal electrodes on the first substrate overlap at least a portion of the orthographic projection of the fourth patch electrode on the first substrate, forming the adjustable capacitor.

[0028] Accordingly, embodiments of this disclosure provide an electronic device, comprising:

[0029] The array is arranged as described in any of the above-mentioned adjustable phase shifters, radiating antennas, power dividers, and feed networks.

[0030] Accordingly, this disclosure provides a method for manufacturing an adjustable phase shifter as described in any of the above claims, comprising:

[0031] An electroplating process is used to form a pattern of the first electrode on one side of the first substrate and a pattern of the second electrode on one side of the second substrate.

[0032] The adjustable dielectric layer is formed between the first substrate and the second substrate so that the adjustable capacitance is formed in the overlapping area of ​​the first electrode and the second electrode.

[0033] Optionally, in this embodiment of the disclosure, an electroplating process is used to form the pattern of the first electrode on one side of the first substrate, including:

[0034] A full first seed layer is deposited on one side of the first substrate;

[0035] An electroplating process is used to form a complete first metal film layer on the side of the first seed layer that is opposite to the first substrate.

[0036] A patterning process is used to etch the first seed layer and the first metal film layer to form the pattern of the first electrode.

[0037] Optionally, in this embodiment of the disclosure, an electroplating process is used to form the pattern of the second electrode on one side of the second substrate, including:

[0038] A full second seed layer is deposited on one side of the second substrate;

[0039] An electroplating process is used to form a complete second metal film layer on the side of the second seed layer that is opposite to the second substrate.

[0040] A patterning process is used to etch the second seed layer and the second metal film layer to form the pattern of the second electrode. Attached Figure Description

[0041] Figure 1 This is a process flow diagram corresponding to one of the traditional electroplating solutions;

[0042] Figure 2 This is a top view of a portion of an adjustable phase shifter provided in an embodiment of the present disclosure;

[0043] Figure 3 For along Figure 2 A schematic diagram of one type of cross-sectional structure along the AA direction;

[0044] Figure 4 For along Figure 2 A schematic diagram of one type of cross-sectional structure along the AA direction;

[0045] Figure 5 For along Figure 2 A schematic diagram of one type of cross-sectional structure along the AA direction;

[0046] Figure 6 For along Figure 2 A schematic diagram of one type of cross-sectional structure along the AA direction;

[0047] Figure 7 For along Figure 2 A schematic diagram of one type of cross-sectional structure along the AA direction;

[0048] Figure 8 To adopt Figure 1 A schematic diagram of one type of phase shifter structure obtained from the process flow diagram shown;

[0049] Figure 9 This is a partial SEM morphology diagram of the electrode corresponding to the adjustable capacitor in the actual manufacturing process of an adjustable phase shifter provided in this embodiment of the present disclosure.

[0050] Figure 10 For along Figure 2 A schematic diagram of one type of cross-sectional structure in the BB direction;

[0051] Figure 11 This is a top view schematic diagram of one embodiment of an adjustable phase shifter provided in this disclosure;

[0052] Figure 12 For along Figure 11 A schematic diagram of one type of cross-sectional structure in the CC direction;

[0053] Figure 13 This is a top view schematic diagram of one embodiment of an adjustable phase shifter provided in this disclosure;

[0054] Figure 14 For along Figure 13 A schematic diagram of one type of cross-sectional structure in the DD direction;

[0055] Figure 15 This is a top view schematic diagram of one embodiment of an adjustable phase shifter provided in this disclosure;

[0056] Figure 16 For along Figure 15 A schematic diagram of one type of cross-sectional structure in the EE direction;

[0057] Figure 17 This is a top view schematic diagram of one embodiment of an adjustable phase shifter provided in this disclosure;

[0058] Figure 18 for Figure 17 A schematic diagram of one of the corresponding three-dimensional structures;

[0059] Figure 19 This is a top view schematic diagram of one embodiment of an adjustable phase shifter provided in this disclosure;

[0060] Figure 20 For along Figure 19 A schematic diagram of one type of cross-sectional structure in the FF direction;

[0061] Figure 21 For along Figure 2 A schematic diagram of one type of cross-sectional structure in the BB direction;

[0062] Figure 22 A top view schematic diagram of one embodiment of a phase shifter array provided in this disclosure;

[0063] Figure 23 This is a schematic diagram of one structure of an electronic device provided in an embodiment of the present disclosure;

[0064] Figure 24 A flowchart illustrating one method of manufacturing an adjustable phase shifter provided in this disclosure embodiment;

[0065] Figure 25 for Figure 24 Flowchart of one method for step S101;

[0066] Figure 26 This is a flowchart of one electroplating process in a method for manufacturing an adjustable phase shifter provided in this disclosure.

[0067] Figure 27 A flowchart of one method for step S101. Detailed Implementation

[0068] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. Furthermore, the embodiments and features in the embodiments of this disclosure can be combined with each other without conflict. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0069] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure pertains. As used in this disclosure, the words “comprising” or “including” and similar terms mean that an element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, but do not exclude other elements or objects.

[0070] Based on the capacitance calculation formula, the inventors discovered in their practical research that the spacing of the overlapping capacitors between the upper and lower substrates has a crucial impact on the performance of the phase shifter. Furthermore, the thickness uniformity of the transmission lines and overlapping stub metal capacitor sheets, combined with the relevant film structure of the phase shifter, has a decisive influence on the device performance.

[0071] Currently, to meet the skin depth requirements, metal films on glass substrates need to be fabricated using electroplating. In practical applications, the metal film thickness corresponding to transmission lines or electrodes in liquid crystal phase shifters is often quite thick, typically exceeding 2 μm. One typical process flow diagram for traditional electroplating is shown below. Figure 1As shown. The electroplating process mainly includes five steps, ① to ⑤. Step ①: Seed layer deposition; correspondingly, a seed layer 01 is formed; Step ②: Thick photoresist (PR) exposure; a thick PR film layer 02 can be formed first, the thickness of the PR film layer 02 increases with the required copper (Cu) thickness, and then the PR film layer 02 is patterned to form the PR film layer with the required pattern; Step ③: Thick Cu electroplating; thick Cu 03 can be electroplated according to the pattern of the PR film layer 02; Step ④: Thick PR stripping; the pattern of the PR film layer 02 can be stripped off; Step ⑤: Seed layer etching; the seed layer 01 can be etched to form the pattern of the required Cu film layer. Since a thick PR film layer 02 needs to be formed before thick Cu electroplating, the requirements for the material and manufacturing process of the PR film layer 02 are high, making mass production impossible. Moreover, due to the characteristics of current concentration in the electroplating process, the uniformity of the film thickness is poor during patterned electroplating. Furthermore, since the thickness of the metal film is closely related to the shape and distribution of the electroplating pattern on the substrate, the uniformity of the electroplating is poorly controllable. The uniformity of the designed metal film thickness is between 33% and 150%, which is low and thus reduces the phase shifting performance of the phase shifter.

[0072] In view of this, the present disclosure provides an adjustable phase shifter, its manufacturing method and electronic device, for ensuring the uniformity of the metal film thickness and improving the phase shifting performance of the phase shifter.

[0073] Combination Figure 2 and Figure 3 As shown, this disclosure provides an adjustable phase shifter, wherein... Figure 2 This is a top view of a portion of the adjustable phase shifter. Figure 3 For along Figure 2 A schematic diagram of one cross-sectional structure along the AA direction. Specifically, the adjustable phase shifter includes:

[0074] The first substrate 10 and the second substrate 20 are disposed opposite to each other;

[0075] An adjustable dielectric layer 30 is disposed between the first substrate 10 and the second substrate 20;

[0076] The first electrode 40 is located on the side of the first substrate 10 facing the adjustable dielectric layer 30;

[0077] The second electrode 50 is located on the side of the second substrate 20 facing the adjustable dielectric layer 30, and the overlapping area of ​​the first electrode 40 and the second electrode 50 forms an adjustable capacitor 60;

[0078] Specifically, along the direction away from the first substrate 10, the cross-sectional area of ​​the first electrode 40 along the plane parallel to the first substrate 10 decreases; along the direction away from the second substrate 20, the cross-sectional area of ​​the second electrode 50 along the plane parallel to the second substrate 20 decreases.

[0079] In specific implementation, the adjustable phase shifter provided in this embodiment includes a first substrate 10 and a second substrate 20 disposed opposite to each other. The first substrate 10 and the second substrate 20 can be glass substrates, polyimide (PI), or liquid crystal polymer (LCP). Of course, the first substrate 10 and the second substrate 20 can be disposed according to actual application needs, and are not limited here.

[0080] The adjustable phase shifter provided in this embodiment further includes an adjustable dielectric layer 30 disposed between the first substrate 10 and the second substrate 20. In one exemplary embodiment, the adjustable dielectric layer 30 may be a liquid crystal layer, and the corresponding adjustable phase shifter may be a liquid crystal phase shifter. The liquid crystal molecules in the liquid crystal layer may be positive liquid crystal molecules or negative liquid crystal molecules, without limitation herein. Furthermore, the adjustable phase shifter includes a first electrode 40 located on the side of the first substrate 10 facing the adjustable dielectric layer 30, and a second electrode 50 located on the side of the second substrate 20 facing the adjustable dielectric layer 30. In one exemplary embodiment, the first electrode 40 may be located on the surface of the first substrate 10 facing the adjustable dielectric layer 30, and the second electrode 50 may be located on the surface of the second substrate 20 facing the adjustable dielectric layer 30. The materials of the first electrode 40 and the second electrode 50 may be the same or different. For example, the material of the first electrode 40 can be indium tin oxide (ITO), copper (Cu), or silver (Ag), etc., and the material of the second electrode 50 can be ITO, Cu, or Ag, etc. Different materials have different conductivity and different losses. In practical applications, the materials of the first electrode 40 and the second electrode 50 can be selected according to the phase shift requirements of the adjustable phase shifter, and no limitation is made here.

[0081] In a specific implementation, the overlapping region of the first electrode 40 and the second electrode 50 forms an adjustable capacitor 60. In one exemplary embodiment, there can be multiple first electrodes 40, multiple second electrodes 50, and correspondingly, multiple adjustable capacitors 60. When the adjustable dielectric layer 30 is a liquid crystal layer, by applying different voltages to the first electrode 40 and the second electrode 50 corresponding to the adjustable capacitor 60, a perpendicular electric field will be generated between them, driving the liquid crystal molecules in the liquid crystal layer to deflect, thereby changing the dielectric constant of the liquid crystal layer, and thus changing the phase shift degree of the adjustable phase shifter.

[0082] Still combined Figure 3 As shown, along the direction away from the first substrate 10, the cross-sectional area of ​​the first electrode 40 decreases along the plane parallel to the first substrate 10; the direction away from the first substrate 10 can be as follows: Figure 3 The direction shown in Z1. Furthermore, along the direction away from the second substrate 20, the cross-sectional area of ​​the second electrode 50 decreases along the plane parallel to the second substrate 20; the direction away from the second substrate 20 can be as follows: Figure 3 The direction shown in Z2. The first electrode 40 and the second electrode 50, with their decreasing cross-sectional area, provide the possibility for electroplating the entire surface to the required thickness of the metal film during the electroplating process. In practical applications, copper plating can be performed on the entire surface first to eliminate the influence of patterning on the uniformity of electroplating. Then, PR adhesive is used to cover and protect the desired metal pattern. The unprotected parts are etched away with an etching solution to form the final desired metal pattern. Finally, the PR adhesive is peeled off. The entire process not only improves the uniformity and controllability of electroplating but also reduces the complexity of the process, thereby ensuring the uniformity of the metal film thickness and improving the phase-shifting performance of the adjustable phase shifter.

[0083] In one exemplary embodiment of this disclosure, such as Figure 4 The following is along Figure 2 A schematic diagram of one type of cross-sectional structure along the AA direction. Specifically, the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the corresponding thickness direction are both trapezoidal, and the length of the base side of the corresponding cross-section that contacts the corresponding substrate is greater than the length of the top side.

[0084] Still combined Figure 4 As shown, the cross-sectional shape of the first electrode 40 and the second electrode 50 along their respective thickness directions is trapezoidal, and the first electrode 40 and the second electrode 50 can be symmetrically designed; moreover, the length of the base side of the corresponding cross-sectional shape in contact with the corresponding substrate is greater than the length of the top side. Figure 4 As shown, the length of the base is L2', the length of the top is L1, and L2' > L1. In one exemplary embodiment, the trapezoid can be a standard shape (such as...). Figure 4 (As shown), the shape can also be non-standard, and is not limited here. In this way, the trapezoidal cross-sectional shape of the first electrode 40 and the second electrode 50 makes it possible to electroplate the required thickness of the metal film layer across the entire surface during the electroplating process. This ensures the uniformity of the metal film layer thickness and improves the phase-shifting performance of the adjustable phase shifter.

[0085] In this embodiment of the disclosure, at least one of the first electrode 40 and the second electrode 50 has the same angle (i.e., slope angle) between the two sides and the bottom edge of its cross-sectional shape along the corresponding thickness direction. In one exemplary embodiment, the angles between the two sides and the bottom edge of the cross-sectional shape of the first electrode 40 along the corresponding thickness direction are the same, and the angles between the two sides and the bottom edge of the cross-sectional shape of the second electrode 50 along the corresponding thickness direction are also the same. Still in conjunction with... Figure 4 As shown, taking the first electrode 40 as an example, the included angles between the two sides and the bottom edge are φ1 and φ2, respectively, where φ1 = φ2. Accordingly, the cross-sectional shape of the first electrode 40 can be an isosceles trapezoid. Based on the same design principle, the cross-sectional shape of the second electrode 50 can also be an isosceles trapezoid symmetrically designed with respect to the first electrode 40. In this way, the symmetry of the overlapping area of ​​the adjustable capacitor 60 is ensured. In one exemplary embodiment, the included angles between the two sides and the bottom edge of the cross-sectional shape of the first electrode 40 along the corresponding thickness direction may be the same. In one exemplary embodiment, the included angles between the two sides and the bottom edge of the cross-sectional shape of the second electrode 50 along the corresponding thickness direction may be the same. Of course, the specific value of the same angle between the two sides and the bottom edge of the cross-sectional shape of at least one of the first electrode 40 and the second electrode 50 along the corresponding thickness direction can be set according to the actual application needs, and is not limited here.

[0086] Still combined Figure 4 As shown, the range of the angles is (0°, 90°). For example, φ1 = φ2 = 45°. In specific implementation, the specific included angle between the side and base of the trapezoid corresponding to each cross-sectional shape can be designed according to the required phase shift degree of the adjustable phase shifter, and is not limited here.

[0087] In one exemplary embodiment of this disclosure, such as Figure 5 The following is along Figure 2 A schematic diagram of one type of cross-sectional structure along the AA direction. Specifically, the first electrode 40 and the second electrode 50 are arranged in an arc shape along the sides of the cross-sectional shape in the corresponding thickness direction, and the arc shape is concave towards the center of the corresponding cross-sectional shape.

[0088] Still combined Figure 5As shown, the first electrode 40 and the second electrode 50 have arc-shaped sides along their respective thickness directions, and these arcs are concave towards the center of their respective cross-sectional shapes. Correspondingly, for the first electrode 40, the angle between the corresponding position on the side and the corresponding bottom edge increases along the direction away from the first electrode 40. In this way, when the metal film thickness corresponding to the first electrode 40 and the second electrode 50 is relatively thick, the etching time is longer, and the contact time of the metal film with the etching solution at different positions will also vary, thus providing the possibility of first electroplating the entire surface with the required thickness of metal film during the electroplating process. Figure 5 As shown, the angles between the three different positions on the side and the parallel bottom edge are φ3, φ4, and φ5, respectively, and φ3 < φ4 < φ5. Furthermore, the design principle of the second electrode 50 is the same as that of the first electrode 40, and will not be repeated here.

[0089] It should be noted that, under the same process parameters, the angle between the side of the cross-sectional shape of the first electrode 40 and the corresponding bottom edge is the same for the same thickness; the angle between the side of the cross-sectional shape of the second electrode 50 and the corresponding bottom edge is also the same for the same thickness.

[0090] In one exemplary embodiment of this disclosure, such as Figure 6 The following is along Figure 2 A schematic diagram of one type of cross-sectional structure in the direction shown in Figure AA. Specifically, the corresponding side edges and top edges of the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the corresponding thickness direction are chamfered. (Still in conjunction with...) Figure 6 As shown, the first electrode 40 and the second electrode 50 have rounded corners between their corresponding side edges and top edges along their respective thickness directions. Combined with... Figure 7 As shown, the corresponding sides and top edges of the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the corresponding thickness direction are designed with chamfered corners. That is, the right angle of the first electrode 40 and the second electrode 50 at the adjustable capacitor 60 can be adjusted to a rounded corner or a chamfered corner, thereby avoiding the risk of tip discharge under high power signals.

[0091] In this embodiment of the disclosure, combined with Figure 4 As shown, the capacitance value of the adjustable capacitor 60 is:

[0092]

[0093] Wherein, C1 represents the capacitance value of the adjustable capacitor 60, ε0 represents the vacuum dielectric constant, and ε rLet L represent the relative permittivity, L represent the extension length of the first electrode 40 and the second electrode 50, L1 represent the length of the top edge of the cross-sectional shape of the first electrode 40 and the second electrode 50 along the corresponding thickness direction, L2′ represent the length of the bottom edge of the cross-sectional shape of the first electrode 40 and the second electrode 50 along the corresponding thickness direction, D1 represent the distance between the two top edges of the cross-sectional shape of the first electrode 40 and the second electrode 50 along the corresponding thickness direction in the overlapping region, and D2 represent the distance between the two bottom edges of the cross-sectional shape of the first electrode 40 and the second electrode 50 along the corresponding thickness direction in the overlapping region.

[0094] In practical implementation, the cross-sectional shapes of the first electrode 40 and the second electrode 50 can be equivalent to having an angle of φ between the side and the bottom edge (i.e., φ1 = φ2 = φ). Figure 4 The isosceles trapezoid shown. Correspondingly, the capacitance value of the adjustable capacitor 60 can be equivalent to:

[0095]

[0096] Accordingly,

[0097] In the embodiments disclosed herein, the inventors have discovered that using Figure 1 The phase shifter structure obtained from the process flow diagram shown is as follows: Figure 8 As shown. In order to ensure the uniformity of the metal film thickness while maintaining the capacitance value of the adjustable capacitor 60 of the adjustable phase shifter provided in this embodiment of the present disclosure, the following measures are taken: Figure 8 The phase shifters shown have equal capacitance values. When the capacitance lengths of the two phase shifters are equal, it is necessary to increase the capacitance width corresponding to the adjustable capacitor 60, that is, the width of the corresponding first electrode 40 and second electrode 50.

[0098] Ideally, Figure 8 The capacitance value of the overlapping capacitor corresponding to the phase shifter shown is:

[0099]

[0100] Where ε0 represents the vacuum permittivity, ε r L represents the relative permittivity, L represents the extension length of the corresponding electrode of the overlapping capacitor, L2 represents the width of the overlapping capacitor, and D1 represents the distance between the two electrodes of the overlapping capacitor.

[0101] Therefore, when the two capacitor values ​​are equal, the capacitance width of the adjustable phase shifter in this embodiment can be:

[0102]

[0103] In the actual fabrication of the adjustable phase shifter of this embodiment, the capacitance width of the corresponding overlapping capacitor can be compensated according to the capacitance value of the overlapping capacitor required by the conventional electroplating process, and the capacitance width of the adjustable capacitor 60 of the adjustable phase shifter can be determined. In this way, while taking into account the uniformity of the thickness of the metal film layer of the electrode corresponding to the overlapping capacitor, the phase shifting performance of the adjustable phase shifter is guaranteed.

[0104] Furthermore, it should be noted that during the actual fabrication of the adjustable phase shifter of this embodiment, the included angle between the corresponding side and bottom edges of the first electrode 40 and the second electrode 50 will be affected by various factors such as the composition of the etching solution, the copper thickness, and the equipment. Moreover, the cross-sectional shape of the first electrode 40 and the second electrode 50 along their respective thickness directions is not a standard trapezoid. In the actual process, the material for the first electrode 40 and the second electrode 50 is copper, the thickness of the molybdenum (Mo) / Cu seed layer is 300 Å / 5000 Å, and the thickness of the entire metal film (including the seed layer) after thick Cu electroplating is 2 μm. A schematic diagram of the scanning electron microscope (SEM) morphology of a portion of the corresponding electrode is shown below. Figure 9 As shown. Of course, the SEM morphology of the first electrode 40 and the second electrode 50 will differ under different process parameters, which will not be described in detail here.

[0105] Considering that the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the corresponding thickness direction are not standard trapezoids, in order to more accurately determine the capacitance width of the adjustable phase shifter in this embodiment, the equivalent capacitance value can be obtained by piecewise integration based on the actual film shape and the slope angle at different positions of the corresponding side. Then, based on the equivalent capacitance value and the ideal equivalent capacitance value, the required compensation width can be determined, thereby determining the required capacitance width of the adjustable phase shifter in this embodiment, thus improving the capacitance compensation accuracy of the adjustable phase shifter.

[0106] It should be noted that the metal film layer scheme for the corresponding electrode of the adjustable capacitor 60 in this embodiment is applicable to the design of various adjustable phase shifters, achieving better control over the process fluctuations of the capacitor spacing and ensuring the overall performance of the corresponding adjustable phase shifter. In specific implementation, the adjustable phase shifter provided in this embodiment can be a two-wire structure phase shifter or a single-wire structure phase shifter.

[0107] For a two-wire phase shifter, such as Figure 10 The following is along Figure 2A schematic diagram of one cross-sectional structure in the BB direction. Specifically, the first electrode 40 includes intermittently arranged first signal electrodes 401 and second signal electrodes 402. The second electrode 50 includes a first patch electrode 501 attached to the side of the second substrate 20 facing the adjustable dielectric layer 30. The orthographic projections of the first signal electrode 401 and the second signal electrode 402 on the first substrate 10 at least partially overlap with the orthographic projection of the first patch electrode 501 on the first substrate 10, forming the adjustable capacitor 60. In one exemplary embodiment, the first patch electrode 501 can be attached to the surface of the second substrate 20 facing the adjustable dielectric layer 30. (Continuing in the context of...) Figure 10 As shown, the overlapping areas of the first signal electrode 401 and the first patch electrode 501, and the overlapping areas of the second signal electrode 402 and the patch electrode, both form adjustable capacitors 60. Furthermore, still in conjunction with... Figure 10 As shown, a ground electrode is also provided on the side surface of the first substrate 10 opposite to the adjustable dielectric layer 30, thereby providing a reference ground for the first signal electrode 401 and the second signal electrode 402, so as to form a structure similar to a microstrip transmission line.

[0108] For a two-wire phase shifter, in one exemplary embodiment, such as Figure 11 and Figure 12 As shown, where, Figure 11 This is a top view schematic diagram of one type of adjustable phase shifter. Figure 12 For along Figure 11 A schematic diagram of one cross-sectional structure in the CC direction. Specifically, the first electrode 40 includes a first main body portion 41 extending along a first direction and a plurality of first branch portions 42 connected to the first main body portion 41 and extending along a second direction intersecting the first direction. The second electrode 50 includes a second main body portion 51 extending along the first direction and a plurality of second branch portions 52 connected to the second main body portion 51 and extending along the second direction. The first branch portions 42 and the corresponding second branch portions 52 at least partially overlap to form the adjustable capacitor 60.

[0109] Still combined Figure 11 and Figure 12 As shown, the first electrode 40 includes a first main body portion 41 extending along a first direction, and a plurality of first branch portions 42 connected to the first main body portion 41 and extending along a second direction intersecting the first direction. The first direction is as follows: Figure 11 The direction indicated by the middle arrow X1, the second direction is as follows Figure 11The direction indicated by the middle arrow Y1. The number of the plurality of first branches 42 can be set according to the actual requirements of the phase shift degree of the adjustable phase shifter, and is not limited here. In addition, the second electrode 50 includes a second main body 51 extending along the first direction, and a plurality of second branches 52 connected to the second main body 51 and extending along the second direction. The number of the plurality of second branches 52 can be set according to the actual requirements of the phase shift degree of the adjustable phase shifter. The orthographic projection of the first branch 42 on the first substrate 10 and the orthographic projection of the corresponding second branch 52 on the first substrate 10 at least partially overlap. In this way, the overlapping area of ​​the first branch 42 and the second branch 52 can form a corresponding adjustable capacitor 60, thereby ensuring the phase shift performance of the adjustable phase shifter. In practical applications, the number of first branches 42 and second branches 52 and their overlapping area can be set according to the actual requirements of the phase shift degree of the adjustable phase shifter, which will not be described in detail here.

[0110] For a two-wire phase shifter, in one exemplary embodiment, such as Figure 13 and Figure 14 As shown, where, Figure 13 This is a top view schematic diagram of one type of adjustable phase shifter. Figure 14 For along Figure 13 A schematic diagram of one cross-sectional structure in the DD direction. Specifically, the first electrode 40 includes a plurality of intermittently arranged first ground electrodes 403. Each first ground electrode 403 is coupled to a second ground electrode 70 disposed on the side of the first substrate 10 opposite to the adjustable dielectric layer 30 through a through-hole penetrating the thickness direction of the first substrate 10. The orthographic projection of each first ground electrode 403 on the first substrate 10 completely falls within the area of ​​the orthographic projection of the second ground electrode 70 on the first substrate 10. The orthographic projection of each first ground electrode 403 on the first substrate 10 at least partially overlaps with the orthographic projection of the first patch electrode 501 on the first substrate 10, forming the adjustable capacitor 60.

[0111] Still combined Figure 13 and Figure 14As shown, the first electrode 40 includes a plurality of intermittently arranged first ground electrodes 403. Each first ground electrode 403 is coupled to a second ground electrode 70 disposed on the side of the first substrate 10 opposite to the adjustable dielectric layer 30 through a through-hole penetrating the thickness direction of the first substrate 10, thereby providing a reference ground for the first signal electrode 401 and the second signal electrode 402, so as to form a structure similar to a microstrip transmission line. In addition, the orthographic projection of each first ground electrode 403 on the first substrate 10 completely falls within the area of ​​the orthographic projection of the second ground electrode 70 on the first substrate 10, thereby improving the performance of the adjustable phase shifter. Furthermore, in addition to the first signal electrode 401 and the first patch electrode 501 forming an adjustable capacitor 60 in the overlapping area, and the second signal electrode 402 and the first patch electrode 501 forming an adjustable capacitor 60 in the overlapping area, since the orthographic projection of each first ground electrode 403 on the first substrate 10 at least partially overlaps with the orthographic projection of the first patch electrode 501 on the first substrate 10, the first ground electrode 403 and the first patch electrode 501 can also form an adjustable capacitor 60 in the overlapping area, thereby ensuring the phase shifting performance of the adjustable phase shifter.

[0112] For a single-wire phase shifter, it can be a phase shifter with a coplanar waveguide (CPW) structure. In one exemplary embodiment, such as Figure 15 and Figure 16 As shown, where, Figure 15 The diagram shown is a top view of one type of phase shifter structure. Figure 16 The following is along Figure 15 A schematic diagram of one cross-sectional structure in the EE direction. Specifically, the first electrode 40 includes a plurality of intermittently arranged third ground electrodes 404 and a third signal electrode 405 located between two adjacent third ground electrodes 404. The second electrode 50 includes a plurality of intermittently arranged second patch electrodes 502. The orthographic projections of each third ground electrode 404 and the third signal electrode 405 on the first substrate 10 at least partially overlap with the orthographic projections of the corresponding second patch electrode 502 on the first substrate 10, forming the adjustable capacitor 60.

[0113] Still combined Figure 15 and Figure 16As shown, the first electrode 40 includes a plurality of intermittently arranged third ground electrodes 404 and a third signal electrode 405 located between two adjacent third ground electrodes 404. In one exemplary embodiment, the plurality of third ground electrodes 404 and the third signal electrode 405 may all be located on the surface of the first substrate facing the adjustable dielectric layer 30. The second electrode 50 includes a plurality of spaced-apart second patch electrodes 502, and the orthographic projections of each third ground electrode 404 and third signal electrode 405 on the first substrate 10 at least partially overlap with the orthographic projections of the corresponding second patch electrode 502 on the first substrate 10. In this way, the overlapping areas of each third ground electrode 404 and third signal electrode 405 with the second patch electrode 502 can form an adjustable capacitor 60. In practical applications, the number of third ground electrodes 404 and second patch electrodes 502 can be set according to the needs of the phase shift degree of the adjustable phase shifter, and is not limited here.

[0114] For a single-wire phase shifter, in one exemplary embodiment, such as Figure 17 and Figure 18 As shown, where, Figure 17 The diagram shown is a top view of one type of adjustable phase shifter. Figure 18 for Figure 17 The diagram shows one of the corresponding three-dimensional structures. Specifically, the first electrode 40 includes a fourth ground electrode 406 and a fourth signal electrode 407. The fourth ground electrode 406 includes a first sub-ground electrode 4061 and a second sub-ground electrode 4062 arranged at intervals. The fourth signal electrode 407 is located between the first sub-ground electrode 4061 and the second sub-ground electrode 4062. The second electrode 50 includes a plurality of third patch electrodes 503 arranged at intervals.

[0115] The fourth signal electrode 407 includes a third main body portion 4071 extending along a third direction, and a plurality of third branch portions 4072 connected to the third main body portion 4071 and extending along a fourth direction intersecting the third direction.

[0116] The first sub-ground electrode 4061 includes a fourth main body portion 40611 extending along the third direction, and a plurality of fourth branch portions 40612 connected to the fourth main body portion 40611 and extending along the fourth direction.

[0117] The second sub-ground electrode 4062 includes a fifth main body portion 40621 extending along the third direction, and a plurality of fifth branch portions 40622 connected to the fifth main body portion 40621 and extending along the fourth direction;

[0118] The orthographic projection of each of the third patch electrodes 503 on the first substrate 10 at least partially overlaps with the orthographic projections of the corresponding third branch 4072, fourth branch 40612 and fifth branch 40622 on the first substrate 10, forming the adjustable capacitor 60.

[0119] Still combined Figure 17 and Figure 18 As shown, the third party to such Figure 17 The direction indicated by the middle arrow X2, the fourth direction is as follows Figure 17 The direction indicated by the middle arrow Y2; the fourth signal electrode 407 has a plurality of tunable third branches 4072; the first sub-ground electrode 4061 in the fourth ground electrode 406 has a plurality of tunable fourth branches 40612; the second sub-ground electrode 4062 in the fourth ground electrode 406 has a plurality of tunable fifth branches 40622; in this way, not only can the adjustable capacitor 60 be formed by the partial overlap of each third patch electrode 503 with the corresponding fourth branch 40612 and third branch 4072, but also the adjustable capacitor 60 can be formed by the partial overlap of each third patch electrode 503 with the corresponding fifth branch 40622 and third branch 4072, thereby ensuring the phase shifting performance of the adjustable phase shifter.

[0120] For a single-wire phase shifter, in one exemplary embodiment, such as Figure 19 and Figure 20 As shown, where, Figure 19 The diagram shown is a top view of one type of adjustable phase shifter. Figure 20 For along Figure 19 A schematic diagram of one cross-sectional structure in the FF direction. Specifically, the first electrode 40 includes a plurality of fifth ground electrodes 408 spaced apart and a fifth signal electrode 409 located between two adjacent fifth ground electrodes 408. The second electrode 50 includes a fourth patch electrode 504 attached to the side of the second substrate 20 facing the adjustable dielectric layer 30. The orthographic projections of each of the fifth ground electrodes 408 and the fifth signal electrodes 409 on the first substrate 10 overlap at least partially with the orthographic projection of the fourth patch electrode 504 on the first substrate 10, forming the adjustable capacitor 60.

[0121] Still combined Figure 19 and Figure 20As shown, the orthographic projection of the fifth signal electrode 409 disposed on the surface of the first substrate 10 facing the adjustable dielectric layer 30 falls entirely within the region of the orthographic projection of the fourth patch electrode 504 attached to the surface of the second substrate 20 facing the adjustable dielectric layer 30 on the first substrate 10. In this way, the fourth patch electrode 504 and the fifth signal electrode 409 can form an adjustable capacitor 60 in the overlapping region. Furthermore, the orthographic projections of each fifth ground electrode 408 on the first substrate 10 partially overlap with the orthographic projections of the fourth patch electrodes 504 on the first substrate 10, thereby forming an adjustable capacitor 60 in the overlapping region of the fifth ground electrode 408 and the fourth patch electrode 504. This ensures the phase-shifting performance of the adjustable phase shifter.

[0122] In the embodiments disclosed herein, such as Figure 21 The following is along Figure 2 A schematic diagram of one cross-sectional structure in the BB direction. In addition to the aforementioned films, taking the first substrate 10 as an example, the adjustable phase shifter also includes a patterned marking metal layer 80 disposed on the side of the first substrate 10 facing the adjustable dielectric layer 30, a first passivation layer (not shown in the figure) disposed on the side of the marking metal layer 80 away from the first substrate 10, a second passivation layer 90 disposed on the side of the first electrode 40 away from the first substrate 10, a filling layer 100 disposed on the side of the second passivation layer 90 away from the first substrate 10, a plurality of support pillars 110 disposed between the first substrate 10 and the second substrate 20, and an alignment layer (not shown in the figure) disposed on the side of the adjustable dielectric layer 30 near the first substrate 10. The material of the marking metal layer 80 can be Mo or Al, and is not limited here.

[0123] The materials of the first passivation layer and the second passivation layer 90 can be silicon nitride (SiN) or silicon oxide (SiO), and are not limited thereto. In one exemplary embodiment, the dielectric constant of the first passivation layer can be controlled between 2 and 4, thereby reducing the impact on the phase shift and insertion loss of the adjustable phase shifter. The second passivation layer 90 can alleviate the internal stress caused by the subsequent metal transmission line, and at the same time, it can protect the metal film layer corresponding to the electrode, preventing chemical reactions from contact with liquid crystal or air. The filler layer 100 can be a resin layer material. In actual processes, the relevant film layer and the metal transmission line film layer can be smoothed by spin coating, or the height of the film layer can be controlled to be about 0.5 μm above the transmission line metal film layer by slit coating process, and a support pillar can be prepared on it after curing process. For example, the height of the support pillar is 2 μm to 5 μm. For example, in a low-frequency adjustable phase shifter, the height of the support pillar 110 can be 30 μm to 40 μm. Of course, the height of the support column 110 can also be set according to the actual application needs, and there is no limitation here.

[0124] Furthermore, the alignment layer can be a polyimide (PI) film. In the case where the adjustable dielectric layer 30 in the phase shifter is a liquid crystal layer, a pre-set alignment layer can be used to tilt the liquid crystal molecules in the liquid crystal layer at a preset angle. The relevant film layer structures on the first substrate 10 and the second substrate 20 are symmetrically arranged. The description of the relevant film layer structures on the second substrate 20 can be referenced to the corresponding portion of the first substrate 10, and will not be repeated here. In this way, after applying a driving voltage to the relevant electrodes, the adjustment efficiency of the dielectric constant of the liquid crystal layer is improved, thereby improving the phase shifting efficiency of the adjustable phase shifter. Of course, other film layers of the adjustable phase shifter can also be set according to actual application needs; specific settings can be referred to in related technologies, and will not be detailed here.

[0125] It should be noted that, in addition to the structures mentioned above, the adjustable phase shifter provided in this disclosure can also be configured with specific structures according to actual application needs, which will not be detailed here. Furthermore, based on the adjustable phase shifter provided in this disclosure, multiple adjustable phase shifter arrays can be arranged to form... Figure 22 The diagram shows a phase shifter array. Region S represents a phase shifter. In specific implementations, each adjustable phase shifter in this array can be a coplanar phase shifter based on CPW, or a non-coplanar phase shifter based on CPW. For the coplanar phase shifter, the signal electrode and ground electrode are located on the same surface of the same substrate, i.e., on the same side inside the adjustable dielectric layer 30, with overlapping electrode patches forming projected orthogonal areas, thus forming the adjustable capacitor 60. For the non-coplanar phase shifter, the signal electrode and ground electrode are located on opposite sides inside the adjustable dielectric layer 30, with overlapping electrode patches formed by branches extending from the signal electrode and / or ground electrode, forming projected orthogonal areas, thus forming the adjustable capacitor 60.

[0126] Based on the same publicly disclosed concept, such as Figure 23 As shown, this disclosure provides an electronic device, which includes:

[0127] The array is arranged as described above, including the adjustable phase shifter 1000, the radiating antenna 2000, the power divider network 3000, and the feed network 4000.

[0128] In practical implementation, the power divider network 3000 and the feeder network 4000 can have the same network structure. Furthermore, the specific structures of the radiating antenna 2000, power divider network 3000, and feeder network 4000 can be found in relevant technical documents and will not be detailed here. In addition, the principle by which this electronic device solves the problem is similar to that of the aforementioned adjustable phase shifter; therefore, the implementation of this electronic device can refer to the implementation of the aforementioned adjustable phase shifter, and repetitions will not be repeated.

[0129] Based on the same publicly disclosed concept, such as Figure 24 As shown, this disclosure provides a method for manufacturing an adjustable phase shifter as described above, the method comprising:

[0130] S101: Using an electroplating process, a pattern of the first electrode is formed on one side of the first substrate, and a pattern of the second electrode is formed on one side of the second substrate.

[0131] S102: The adjustable dielectric layer is formed between the first substrate and the second substrate so that the adjustable capacitance is formed in the overlapping area of ​​the first electrode and the second electrode.

[0132] In the specific implementation process, steps S101 to S102 are implemented as follows:

[0133] First, an electroplating process is used to form a pattern of a first electrode on one side of a first substrate and a pattern of a second electrode on one side of a second substrate. The specific formation processes of the first and second electrode patterns are described in the relevant sections below. Then, an adjustable dielectric layer is formed between the first and second substrates, and the first and second substrates are aligned. An adjustable capacitor is formed in the overlapping area of ​​the first and second electrodes.

[0134] In the embodiments disclosed herein, such as Figure 25 As shown, in step S101: an electroplating process is used to form the pattern of the first electrode on one side of the first substrate, including:

[0135] S201: Deposit a complete first seed layer on one side of the first substrate;

[0136] S202: Using an electroplating process, a complete first metal film layer is formed on the side of the first seed layer that is away from the first substrate.

[0137] S203: Using a patterning process, the first seed layer and the first metal film layer are etched to form the pattern of the first electrode.

[0138] In the specific implementation process, combined with Figure 21 The adjustable phase shifter shown and Figure 26 The electroplating process flow chart shown below illustrates the specific implementation process of steps S201 to S203 as follows:

[0139] Taking the formation of a first electrode pattern on one side of a first substrate using an electroplating process as an example, firstly, an Al / Mo metal film is deposited on the first substrate using physical vapor deposition (PVD). Then, a specific mask is formed using a photomask with a special pattern combined with an etching process for marking subsequent processes. Next, a SiNx film is formed on the above film using chemical vapor deposition (CVD), with the dielectric constant of the SiNx film controlled between 2 and 4 to reduce the impact on the phase shift degree and insertion loss of the adjustable phase shifter. Then, driving traces are deposited on the above film. These driving traces can be traces with a linewidth of 10 μm and a line spacing of 5 μm formed by an ITO film. Alternatively, these driving traces can also be array wires formed using a MoNb / Cu film, combined with a thin film transistor (TFT) device to form an active matrix (AM) driving array film.

[0140] Then, a transmission line film layer is formed on the above-mentioned film layer through an electroplating process. This can be achieved by first forming a seed layer using PVD; then, using electroplating equipment and a process, a first metal film layer is formed on the side of the first seed layer facing away from the first substrate, thus completing the metal growth to the required film thickness; then, a patterning process is used to etch the first seed layer and the first metal film layer to form the pattern of the first electrode. Alternatively, the desired metal pattern can be covered and protected with PR adhesive, and the unprotected parts can be etched away using an etching solution to form the metal film layer with the desired pattern; then, the PR adhesive is peeled off to form the first electrode with the desired pattern.

[0141] Then, a negative stress film layer, which can be SiNx, can be deposited on the above-mentioned film layer to alleviate the internal stress caused by the excessively thick metal transmission line layer, while also protecting the metal film layer and preventing chemical reactions with the liquid crystal or air. Next, a resin layer material can be sprayed onto the side of the film layer facing away from the first substrate, and the film layer can be smoothed with the metal transmission line film layer using a spin coating process. The height of the film layer can also be controlled to be approximately 0.5 μm above the transmission line metal film layer using a slot coating process, and a filling layer can be formed after curing. This filling layer ensures flatness in subsequent film layer fabrication processes. Then, a support pillar is fabricated above it (in the non-metallic transmission line region), with a height of 2 μm to 5 μm. This support pillar can be formed in the space of the first substrate where it does not overlap with the metal transmission line or electrode. The support column can be made of polystyrene (PS) resin or oleoresin capsicum (OC) resin. The cross-sectional shape of the support column can be square, circular, etc. After the support column and filling layer are prepared, the PI film layer can be uniformly laid on the film layer using inkjet printing technology. Then, the photo-alignment process of the PI film layer is completed using OA equipment to form an alignment layer.

[0142] In the embodiments disclosed herein, such as Figure 27 As shown, in step S101: an electroplating process is used to form the pattern of the second electrode on one side of the second substrate, including:

[0143] S301: Deposit a complete second seed layer on one side of the second substrate;

[0144] S302: An electroplating process is used to form a complete second metal film layer on the side of the second seed layer that is away from the second substrate.

[0145] S303: Using a patterning process, the second seed layer and the second metal film layer are etched to form the pattern of the second electrode.

[0146] For the specific implementation of steps S301 to S303, a similar process can also be used to form the pattern of the second electrode on the second substrate, and to prepare other film layers besides the support pillars; the specific process will not be detailed here. Then, a sealing adhesive can be coated around the device, liquid crystal can be dropped in, and the cells can be aligned to complete the fabrication of the entire device. Alternatively, a sealing adhesive can be coated around the device, and after alignment, liquid crystal can be injected using a crystal pouring method to complete the fabrication of the entire device.

[0147] Although preferred embodiments of this disclosure have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this disclosure.

[0148] Obviously, those skilled in the art can make various modifications and variations to this disclosure without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims of this disclosure and their equivalents, this disclosure is also intended to include such modifications and variations.

Claims

1. An adjustable phase shifter, wherein, The application relates to a tunable capacitor, comprising: a first substrate and a second substrate arranged oppositely; a tunable dielectric layer arranged between the first substrate and the second substrate; a first electrode arranged on a side of the first substrate facing the tunable dielectric layer; a second electrode arranged on a side of the second substrate facing the tunable dielectric layer, and an overlapping area of the first electrode and the second electrode forms the tunable capacitor; The first electrode has a decreasing cross-sectional area along a direction away from the first substrate and parallel to a plane in which the first substrate lies. The second electrode has a decreasing cross-sectional area along a direction away from the second substrate and parallel to a plane in which the second substrate lies. The length of the base of the cross-sectional shape of the first electrode and the second electrode along the respective thickness direction is a capacitance width determined according to an equivalent capacitance value and an ideal equivalent capacitance value. The equivalent capacitance value is determined according to the actual film shape of the first electrode and the second electrode. The ideal equivalent capacitance value satisfies the formula: wherein, represents a vacuum dielectric constant, represents a relative dielectric constant, represents an extension length of an overlapping capacitance corresponding electrode, represents a width of the overlapping capacitance, represents a distance between two electrodes of the overlapping capacitance; the overlapping capacitance is determined according to a conventional electroplating process.

2. The tunable phase shifter of claim 1, wherein, cross-sectional shapes of the first electrode and the second electrode along respective thickness directions are trapezoidal, and lengths of bottom edges of the respective cross-sectional shapes in contact with the corresponding substrate are greater than lengths of top edges.

3. The tunable phase shifter of claim 2, wherein, angles between two side edges and a bottom edge of the cross-sectional shape of at least one of the first electrode and the second electrode along the respective thickness direction are the same angle.

4. The tunable phase shifter of claim 3, wherein, The angle ranges from 0° to 90°.

5. The tunable phase shifter of any of claims 1-4, wherein, side edges of the cross-sectional shape of the first electrode and the second electrode along the respective thickness direction are arranged in an arc shape, and the arc shape is concave towards a direction close to a central position of the respective cross-sectional shape.

6. The adjustable phase shifter of claim 5, wherein, corners are arranged between the corresponding side edges and the top edge of the cross-sectional shape of the first electrode and the second electrode along the respective thickness direction.

7. The adjustable phase shifter of claim 6, wherein, The capacitance value of the adjustable capacitor is: wherein represents a capacitance value of the tunable capacitance, represents a vacuum permittivity, represents a relative permittivity, represents an extension length of the first electrode and the second electrode, represents a length of a top side of a cross-sectional shape of the first electrode and the second electrode along a respective thickness direction, represents a length of a bottom side of a cross-sectional shape of the first electrode and the second electrode along a respective thickness direction, represents a distance between two top sides of a cross-sectional shape of the first electrode and the second electrode along a respective thickness direction in the overlapping region, represents a distance between two bottom sides of a cross-sectional shape of the first electrode and the second electrode along a respective thickness direction in the overlapping region.

8. The tunable phase shifter of claim 7, wherein, The first electrode comprises a first signal electrode and a second signal electrode arranged intermittently, the second electrode comprises a first patch electrode attached to a side of the second substrate facing the tunable dielectric layer, and a normal projection of the first signal electrode on the first substrate and a normal projection of the second signal electrode on the first substrate at least partially overlap with a normal projection of the first patch electrode on the first substrate, forming the tunable capacitor.

9. The tunable phase shifter of claim 7, wherein, The first electrode comprises a first main body part extending along a first direction and a plurality of first branch parts connected with the first main body part and extending along a second direction intersecting the first direction, and the second electrode comprises a second main body part extending along the first direction and a plurality of second branch parts connected with the second main body part and extending along the second direction, and the first branch parts at least partially overlap with the corresponding second branch parts, forming the tunable capacitor.

10. The tunable phase shifter of claim 8, wherein, The first electrode comprises a plurality of first ground electrodes arranged intermittently, each first ground electrode is coupled with a second ground electrode arranged on a side of the first substrate away from the tunable dielectric layer through a via hole penetrating the thickness direction of the first substrate, and a normal projection of each first ground electrode on the first substrate completely falls within a range of a normal projection of the second ground electrode on the first substrate, and the normal projection of each first ground electrode on the first substrate at least partially overlaps with the normal projection of the first patch electrode on the first substrate, forming the tunable capacitor.

11. The tunable phase shifter of claim 7, wherein, The first electrode comprises a plurality of third ground electrodes arranged intermittently and a third signal electrode arranged between two adjacent third ground electrodes, and the second electrode comprises a plurality of second patch electrodes arranged intermittently, and the normal projection of each third ground electrode and the third signal electrode on the first substrate at least partially overlaps with the normal projection of the corresponding second patch electrode on the first substrate, forming the tunable capacitor.

12. The tunable phase shifter of claim 7, wherein, The first electrode comprises a fourth ground electrode and a fourth signal electrode, the fourth ground electrode comprises a first sub-ground electrode and a second sub-ground electrode arranged at intervals, and the fourth signal electrode is located between the first sub-ground electrode and the second sub-ground electrode; the second electrode comprises a plurality of third patch electrodes arranged at intervals; The fourth signal electrode comprises a third main body part extending along a third direction, and a plurality of third branch parts connected with the third main body part and extending along a fourth direction intersecting the third direction; The first sub-ground electrode comprises a fourth main body part extending along the third direction, and a plurality of fourth branch parts connected with the fourth main body part and extending along the fourth direction; The second sub-ground electrode comprises a fifth main body part extending along the third direction, and a plurality of fifth branch parts connected with the fifth main body part and extending along the fourth direction; The orthographic projection of each third patch electrode on the first substrate at least partially overlaps the orthographic projection of the corresponding third branch part, fourth branch part and fifth branch part on the first substrate to form the adjustable capacitor.

13. The tunable phase shifter of claim 7, wherein, The first electrode comprises a plurality of fifth ground electrodes arranged at intervals and a fifth signal electrode located between adjacent two fifth ground electrodes, and the second electrode comprises a fourth patch electrode attached to the side of the second substrate facing the adjustable dielectric layer; the orthographic projection of each fifth ground electrode and fifth signal electrode on the first substrate at least partially overlaps the orthographic projection of the fourth patch electrode on the first substrate to form the adjustable capacitor.

14. An electronic device, comprising: Comprise: An array of the adjustable phase shifter, radiating antenna, power dividing network and feed network according to any one of claims 1-13.

15. A method of fabricating a tunable phase shifter as claimed in any one of claims 1 to 13, wherein, Comprise: A plating process is used to form the pattern of the first electrode on one side of the first substrate, and the pattern of the second electrode on one side of the second substrate; The adjustable dielectric layer is formed between the first substrate and the second substrate, so that the overlapping area of the first electrode and the second electrode forms the adjustable capacitor.

16. The method of claim 15, wherein, A plating process is used to form the pattern of the first electrode on one side of the first substrate, comprising: A whole layer of first seed layer is deposited on one side of the first substrate; A plating process is used to form a whole layer of first metal film layer on the side of the first seed layer away from the first substrate; A patterning process is used to etch the first seed layer and the first metal film layer to form the pattern of the first electrode.

17. The method of claim 15, wherein, A plating process is used to form the pattern of the second electrode on one side of the second substrate, comprising: A whole layer of second seed layer is deposited on one side of the second substrate; A plating process is used to form a whole layer of second metal film layer on the side of the second seed layer away from the second substrate; A patterning process is used to etch the second seed layer and the second metal film layer to form the pattern of the second electrode.

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