Gas distribution adapter ring, tray rotation mechanism, and semiconductor processing apparatus

Abstract

The application discloses a gas distribution adapter ring, a tray rotating mechanism and a semiconductor processing device. The tray rotating mechanism is arranged in a reaction cavity of the semiconductor processing device. The tray rotating mechanism comprises a supporting sleeve, a pull rod assembly arranged in the supporting sleeve and a gas distribution adapter ring arranged at the top of the supporting sleeve. A wafer tray assembly for supporting a wafer is arranged on a ring body in the gas distribution adapter ring. A heating device is arranged below the wafer tray assembly. A plurality of first purge gas channels are arranged in the ring body and used for blowing gas to the area between the bottom of the wafer tray assembly and the top of the heating device. The application prevents particles from depositing on the heating device, effectively protects the heating device, ensures uniform heating of the wafer and prolongs the service life of the heating device.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a gas distribution adapter ring, a tray rotation mechanism, and a semiconductor processing device. Background Technology

[0002] In current thin-film deposition equipment, a wafer tray capable of holding one or more wafers is installed within the reaction chamber. The bottom of the wafer tray is connected to a tray rotation mechanism, which rotates the wafer tray under the drive of a driver. Reactive gases are introduced into the reaction chamber to perform the deposition operation on the wafers. A heating device is located below the wafer tray to heat the wafer tray during the semiconductor process, thereby controlling the wafer's process temperature. Reaction byproducts are generated during the process; these impurity particles adhere to the surface of the heating device and cannot be cleaned in time, affecting heating efficiency and causing uneven heating, thus reducing wafer processing yield. Summary of the Invention

[0003] The purpose of this invention is to provide a semiconductor processing device and its tray rotation device and gas distribution adapter ring, which prevents particulate matter from depositing on the heating device, effectively protects the heating device, ensures uniform heating of the wafer, and extends the service life of the device.

[0004] To achieve the above objectives, the present invention provides a gas distribution adapter ring for a tray rotation mechanism. The tray rotation mechanism is disposed within the reaction chamber of a semiconductor processing device. A wafer tray assembly is disposed on top of the tray rotation mechanism. The tray rotation mechanism drives the wafer tray assembly to rotate. The wafer tray assembly carries a wafer. A heating device is disposed below the wafer tray assembly. The gas distribution adapter ring comprises:

[0005] The ring body, wherein the wafer tray assembly is disposed on the ring body;

[0006] A first purge gas channel is provided within the ring body and includes a purge gas outlet for blowing gas into the area between the bottom of the wafer tray assembly and the top of the heating device.

[0007] The purge outlet is located on the outer wall of the gas distribution adapter ring.

[0008] The first purge gas channel further includes a purge inlet end, which is disposed at the top of the gas distribution adapter ring or on the inner side wall of the gas distribution adapter ring.

[0009] Optionally, the number of the first purge gas channels is at least three.

[0010] Optionally, the plurality of the first purge gas channels are evenly distributed along the circumferential direction of the ring body.

[0011] The ring body also includes multiple first driving gas channels, which are used to drive the wafer to rotate.

[0012] The first purge gas channel and the first drive gas channel are set separately from each other.

[0013] The ring body has multiple positioning grooves, and the wafer tray assembly has multiple positioning protrusions; or, the ring body has multiple positioning protrusions, and the wafer tray assembly has multiple positioning grooves; the connection between the gas distribution adapter ring and the wafer tray assembly is achieved through the cooperation of the positioning protrusions and positioning grooves.

[0014] The tray rotation mechanism further includes: a support sleeve and a pull rod assembly disposed within the support sleeve; the gas distribution adapter ring is disposed at the top of the support sleeve; the pull rod assembly is used to tighten the gas distribution adapter ring and the wafer tray assembly; the ring body has multiple slots, which are disposed at the positions where the ring body contacts the pull rod assembly.

[0015] Accordingly, the present invention also provides a tray rotation mechanism disposed within the reaction chamber of a semiconductor processing apparatus and connected to a driver disposed at the bottom of the reaction chamber. A wafer tray assembly for supporting wafers is disposed at the top of the tray rotation mechanism. The tray rotation mechanism includes:

[0016] The gas distributor is connected to the driver. Under the drive force output by the driver, the gas distributor drives the entire tray rotation mechanism to rotate. The gas distributor has multiple second purge gas channels, which are connected to the purge gas source.

[0017] A support sleeve is disposed on the gas distributor seat, the support sleeve having an inner cavity area, and the inner cavity area of ​​the rotating mechanism is connected to the second purge gas channel;

[0018] The gas distribution adapter ring has a first purge gas channel that communicates with the inner cavity region, so that the purge gas from the second purge gas channel can reach the region between the bottom of the wafer tray assembly and the top of the heating device.

[0019] A pull rod assembly, one end of which is fixedly connected to the gas distribution seat, and the other end of which is connected to the gas distribution adapter ring and the wafer tray assembly respectively, is used to tighten the gas distribution adapter ring and the wafer tray assembly.

[0020] The top of the pull rod assembly has multiple connecting rods, the ends of which are embedded in the gas distribution adapter ring to provide a downward pulling force to press the gas distribution adapter ring.

[0021] The support sleeve has multiple second driving gas channels inside its cylinder wall, and the outlet end of the second driving gas channel is connected to the inlet end of the first driving gas channel; the gas distributor has multiple third driving gas channels inside its cylinder wall, and the inlet end of the third driving gas channel is connected to the driving gas source, while the outlet end of the third driving gas channel is connected to the inlet end of the second driving gas channel.

[0022] Accordingly, the present invention also provides a semiconductor processing apparatus, comprising:

[0023] reaction chamber;

[0024] The tray rotation mechanism is disposed within the reaction chamber;

[0025] A driver, which is located at the bottom of the reaction chamber and connected to the bottom of the tray rotation mechanism, is used to drive the tray rotation mechanism to rotate;

[0026] A wafer tray assembly is disposed on top of the tray rotation mechanism and can rotate with the tray rotation mechanism. The wafer tray assembly is used to carry one or more wafers.

[0027] A heating device is disposed below the wafer tray assembly for heating the wafer tray assembly.

[0028] The wafer tray assembly includes:

[0029] A tray, which is disposed on top of the gas distribution adapter ring, the tray having a first central hole;

[0030] Multiple wafer pedestals are evenly distributed on the tray;

[0031] A tray cover is disposed above the tray. The tray cover has a second central hole for receiving a clamping cover. A plurality of wafer through holes are evenly distributed on the tray cover for receiving wafer bases.

[0032] A clamping cover plate is disposed on the tray, located above the first center hole of the tray, and the clamping cover plate is fixedly connected to the pull rod assembly for fixing the wafer tray assembly to the tray rotation mechanism.

[0033] The bottom of the tray has an annular slope that slopes away from the outer wall of the gas distribution ring, and the angle between the annular slope and the horizontal plane is 135° to 170°.

[0034] A gap is reserved between the pressing cover plate and the top of the gas distribution adapter ring, so that the purging gas in the support sleeve can enter the purging inlet end at the top of the gas distribution adapter ring.

[0035] The tray includes multiple positioning protrusions that match the positioning grooves on the gas distribution adapter ring. The positioning protrusions are embedded in the positioning grooves to achieve a positioning connection between the wafer tray assembly and the tray rotation mechanism.

[0036] The tray includes multiple fourth driving gas channels, which are connected to the first driving gas channel in the gas distribution and transfer ring.

[0037] The semiconductor processing device further includes a gas source, and the gas pump includes a purge gas source and a drive gas source;

[0038] The purge gas source is connected to the second purge gas channel on the gas distributor via a pipeline to provide purge gas.

[0039] The driving gas source is connected to the third driving gas channel in the gas distributor via a pipeline to provide driving gas.

[0040] The semiconductor processing apparatus further includes:

[0041] An air intake device is located at the top of the reaction chamber;

[0042] An air extraction device is located at the bottom of the reaction chamber.

[0043] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects:

[0044] In the tray rotation mechanism provided by this invention, a first purge gas channel is added to the gas distribution ring within the tray rotation mechanism. This purge gas is blown towards the area between the bottom of the wafer tray assembly and the top of the heating device, effectively cleaning this area and preventing particulate matter from depositing on the heating device. This effectively protects the heating device and ensures uniform heating of the wafer substrate, thereby guaranteeing product yield. Simultaneously, the flow of the purge gas effectively reduces the internal temperature of the tray rotation mechanism, extending the service life of the heating device. Attached Figure Description

[0045] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device provided by the present invention.

[0046] Figure 2 yes Figure 1 A schematic diagram of the drive air passage and purge air passage of a semiconductor processing device.

[0047] Figure 3 yes Figure 1 A schematic diagram of the purge air passage of a semiconductor processing device.

[0048] Figure 4This is a schematic diagram of the structure of a gas distribution adapter ring provided by the present invention. Detailed Implementation

[0049] The following is based on Figures 1-4 The preferred embodiments of the present invention will be described in detail below.

[0050] like Figure 1 As shown, the present invention provides a semiconductor processing apparatus, comprising a reaction chamber 1, a tray rotation mechanism 2 disposed within the reaction chamber 1, a driver 3 disposed at the bottom of the reaction chamber 1, the driver 3 being connected to the bottom of the tray rotation mechanism 2 for driving the tray rotation mechanism 2 to rotate, a wafer tray assembly 4 disposed at the top of the tray rotation mechanism 2, the wafer tray assembly 4 carrying one or more wafers, and the wafer tray assembly 4 being rotatable with the tray rotation mechanism 2. A heating device 5 disposed below the wafer tray assembly 4 for heating the wafer tray assembly 4. A gas inlet device 6 disposed at the top of the reaction chamber 1 for supplying reaction gas, and correspondingly, a gas extraction device 7 disposed at the bottom of the reaction chamber 1 for discharging residual gas after the process is completed.

[0051] like Figure 1 and Figure 2 As shown, the tray rotation mechanism 2 includes: a gas distribution seat 201, a support sleeve 202, a gas distribution adapter ring 203, and a pull rod assembly 204; the gas distribution seat 201 is connected to the driver 3, and under the driving force output by the driver 3, the gas distribution seat 201 drives the support sleeve 202, the gas distribution adapter ring 203, and the pull rod assembly 204 to rotate, thereby driving the wafer tray assembly 4 to rotate; the support sleeve 202 is disposed on the gas distribution seat 201, and the support sleeve 202 has an inner cavity region 207 (see... Figure 2 The gas distribution adapter ring 203 is disposed on the support sleeve 202; the bottom end of the pull rod assembly 204 is fixedly connected to the gas distribution seat 201, the top end of the pull rod assembly 204 has a connector 205, the connector 205 is used to connect and tighten the wafer tray assembly 4, and the top end of the pull rod assembly 204 also has multiple connecting rods 206, the connecting rods 206 are used to connect and tighten the gas distribution adapter ring 203.

[0052] like Figure 1 and Figure 2As shown, the wafer tray assembly 4 includes: a tray 401 disposed on top of the gas distribution adapter ring 203, the tray 401 having a first central hole 41, the diameter of the first central hole 41 being smaller than the outer diameter of the gas distribution adapter ring 203 and larger than the inner diameter of the gas distribution adapter ring 203, thereby ensuring that the tray 401 can be placed on top of the gas distribution adapter ring 203 without falling off; a plurality of wafer bases 402 are uniformly distributed along the circumferential direction on the tray 401, each wafer... A circular base 402 is used to support the wafer; a tray cover 403 is provided above the tray 401, the tray cover 403 has a second central hole 42, the position of the second central hole 42 matches the position of the first central hole 41, that is, the second central hole 42 and the first central hole 41 are concentrically arranged to accommodate a pressing cover 404. A plurality of wafer through holes 43 are evenly distributed on the tray cover 403, the positions of the wafer through holes 43 match the positions of the wafer base 402, that is, the wafer through holes 43... The wafer via 43 is concentrically arranged with the wafer substrate 402, and the diameter of the wafer via 43 is larger than the diameter of the wafer substrate 402 to avoid interference between the wafer substrate 402 and the tray cover 403. A clamping cover 404 is also provided at a position within the first central hole 41 of the tray 401 and the second central hole 42 of the tray cover 403. The clamping cover 404 is located above the first central hole 41 of the tray 401 and extends to the first central hole of the tray 401. Within 41, the clamping cover 404 can be placed on top of the tray 401 without falling off, and the tension force applied to the clamping cover 404 by the pull rod assembly 204 can also be transmitted to the tray 401. There are gaps between the clamping cover 404 and the tray 401 and the tray cover 403. The clamping cover 404 has a connecting through hole 44. After the connector 205 at the top of the pull rod assembly 204 passes through the connecting through hole 44, it fixes and tightens the clamping cover 404.

[0053] like Figures 1-3 As shown, the wafer tray assembly 4, tray 401 is mounted on the gas distribution adapter ring 203 in the tray rotation mechanism 2, as follows: Figure 4As shown, the gas distribution adapter ring 203 includes a ring body 208, which is disposed on the top of the support sleeve 202 to support the tray 401. In order to better support and install the tray 401, the ring body 208 is provided with a plurality of positioning grooves 213. The positioning grooves 213 are located at the contact position between the ring body 208 and the tray 401. Correspondingly, the tray 401 is also provided with a plurality of positioning protrusions (not shown in the figure). The position and size of the positioning protrusions match the positioning grooves 213 on the gas distribution adapter ring 203. The positioning grooves 213 and the positioning protrusions are not uniformly distributed. Only when the positions between the positioning grooves 213 and the positioning protrusions are completely in one-to-one correspondence can all the positioning protrusions on the tray 401 be embedded in the positioning grooves 213 on the gas distribution adapter ring 203, thereby realizing the positioning connection between the wafer tray assembly 4 and the tray rotation mechanism 2. Similarly, multiple positioning protrusions can be provided on the ring body 208, and multiple positioning grooves can be provided on the tray 401. The positioning connection between the gas distribution adapter ring and the wafer tray assembly can be achieved through the cooperation of the positioning protrusions and positioning grooves.

[0054] Furthermore, in order to better connect with the pull rod assembly 204, the ring body 208 is provided with a plurality of slots 214. The slots 214 are located at positions that contact the plurality of connecting rods 206 on the pull rod assembly 204. The connecting rods 206 are embedded in the slots 214, applying a downward pulling force to the ring body 208, thereby tightening the gas distribution adapter ring 203.

[0055] like Figure 2 As shown, the gas distribution seat 201 is provided with multiple third driving gas channels 21. The inlet end of the third driving gas channel 21 is connected to a driving gas source (not shown in the figure). The driving gas source is connected to the third driving gas channel 21 in the gas distribution seat 201 through a pipeline to provide driving gas. The support sleeve 202 is provided with multiple second driving gas channels 22 inside the cylinder wall. The inlet end of the second driving gas channel 22 is connected to the outlet end of the third driving gas channel 21. The gas distribution adapter ring 203 is provided with multiple first driving gas channels 23 inside the ring body 208. The inlet end of the first driving gas channel 23 ( Figure 4 (Not shown in the image) is connected to the outlet end of the second driving gas channel 22; the tray 401 is provided with multiple fourth driving gas channels 24, the inlet end of the fourth driving gas channel 24 is connected to the outlet end 209 of the first driving gas channel 23 (e.g., ...). Figure 4(As shown) are connected, and the outlet of the fourth driving gas channel 24 is located below the wafer base 402; the third driving gas channel 21, the second driving gas channel 22, the first driving gas channel 23 and the fourth driving gas channel 24 form a complete driving gas channel, which delivers the driving gas from the driving gas source to the area below the wafer base 402, thereby driving the wafer base 402 to rotate.

[0056] Furthermore, such as Figure 3 and Figure 4 As shown, the gas distribution seat 201 is provided with multiple second purge gas channels 25. The inlet end of the second purge gas channel 25 is connected to a purge gas source (not shown in the figure). The purge gas source is connected to the second purge gas channel 25 in the gas distribution seat 201 through a pipeline to provide purge gas. The outlet end of the second purge gas channel 25 is connected to the inner cavity area 207 of the rotating mechanism to fill the inner cavity area 207 of the rotating mechanism with purge gas. The gas distribution adapter ring 203 has multiple first purge gas channels 26 in its ring body 208. The first purge gas channels 26 and the first driving gas channels 23 in the ring body 208 are set separately from each other and cannot be connected or cross each other to ensure that the purge gas channel and the driving gas channel work independently and do not interfere with each other. The first purge gas channel 26 has a purge inlet end 211 and a purge outlet end 212. The purge inlet end 211 is connected to the inner cavity area 207 of the rotating mechanism. The internal cavity region 207 of the mechanism is connected, and the purge gas outlet 211 is located on the outer wall of the ring body 308 of the gas distribution and transfer ring. The second purge gas channel 25, the internal cavity region 207 of the rotating mechanism, and the first purge gas channel 26 form a purge gas channel. The purge gas from the purge gas source enters the internal cavity region 207 of the rotating mechanism through the second purge gas channel 25. The purge gas diffuses in the internal cavity region 207 of the rotating mechanism and is blown from bottom to top. It enters the purge gas inlet 211 of the first purge gas channel 26 and is finally blown through the purge gas outlet 212 of the first purge gas channel 26 to the area between the bottom of the tray 401 and the top of the heating device 5. This effectively purges and cleans the area between the bottom of the tray 401 and the top of the heating device 5, preventing particulate matter from depositing on the heating device 5, effectively protecting the heating device 5, ensuring uniform heating of the wafer substrate, and ensuring product yield. At the same time, since the purge airflow is introduced into the inner cavity region 207 of the rotating mechanism, some heat is also carried away by the flow of the purge airflow, which effectively reduces the temperature inside the tray rotating mechanism 2 and extends the service life of the device.

[0057] In one embodiment of the present invention, the number of the first purge gas channels 26 is at least three. The first purge gas channels 26 are evenly distributed along the circumference of the ring body 208, which allows the heating device 5 to receive a uniform purge airflow throughout the entire circumference, avoiding cleaning dead zones. The purge inlet 211 of the first purge gas channel 26 is located on the inner sidewall of the ring body 208, that is, the first purge gas channel 26 is arranged in a straight line. This makes it easier for the purge gas from the inner cavity region 207 of the rotating mechanism to enter the first purge gas channel 26, and the straight-line propagation is more conducive to the rapid propagation of the purge gas, which helps to improve the purge efficiency. In fact, the number of the first purge gas channels is not limited and can be any number.

[0058] like Figure 4 As shown, in another embodiment of the present invention, the purge inlet 211 of the first purge gas channel 26 is disposed on the top surface of the ring body 208, that is, the first purge gas channel 26 is L-shaped. The L-shaped gas channel is easier to process, reducing processing costs. Figure 3 As shown, in order to accommodate the L-shaped first purge gas passage 26, an installation gap 27 is maintained between the pressure cover plate 404 and the top of the gas distribution adapter ring 203 (see [reference]). Figure 3 The installation gap 27 allows the purging gas from the inner cavity region 207 of the rotating mechanism to more easily enter the purging inlet end 211 located on the top surface of the ring body 208, thereby improving purging efficiency.

[0059] Furthermore, such as Figure 3 As shown, in another embodiment of the present invention, an annular inclined surface 405 is provided at the bottom of the tray 401. The annular inclined surface 405 is inclined away from the outer wall of the gas distribution ring 203. The angle α between the annular inclined surface 405 and the horizontal plane is 135° to 170°. The annular inclined surface 405 forms a flow-guiding buffer surface, which makes it easier for the purge gas from the purge outlet 212 of the first purge gas channel 26 to purge to the area between the bottom of the tray 401 and the top of the heating device 5, thereby improving the purge efficiency and enhancing the cleaning effect on the heating device 5.

[0060] This invention adds a purge gas channel to the tray rotation mechanism, directing the purge gas towards the area between the bottom of the wafer tray assembly and the top of the heating device. This effectively cleans the area, preventing particulate matter from depositing on the heating device, thus protecting it and ensuring uniform heating of the wafer substrate, thereby guaranteeing product yield. Simultaneously, the purge airflow effectively reduces the internal temperature of the tray rotation mechanism, extending device lifespan.

[0061] The second purge gas channel 25, the inner cavity region 207 of the rotating mechanism, and the first purge gas channel 26 constitute the purge gas channel. The purge gas from the purge gas source enters the inner cavity region 207 of the rotating mechanism through the second purge gas channel 25. The purge gas diffuses in the inner cavity region 207 of the rotating mechanism and is blown from bottom to top. It enters the purge inlet end 211 of the first purge gas channel 26 and finally passes through the purge outlet end 212 of the first purge gas channel 26.

[0062] In the tray rotation mechanism provided by this invention, a first purge gas channel is added to the gas distribution ring within the tray rotation mechanism. This purge gas is blown towards the area between the bottom of the wafer tray assembly and the top of the heating device, effectively cleaning this area and preventing particulate matter from depositing on the heating device. This effectively protects the heating device and ensures uniform heating of the wafer substrate, thereby guaranteeing product yield. Simultaneously, the flow of the purge gas effectively reduces the internal temperature of the tray rotation mechanism, extending the service life of the heating device.

[0063] It should be noted that, in the embodiments of the present invention, the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing the embodiments. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0064] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0065] Although the present invention has been described in detail through the above optional embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas distribution adapter ring for a tray rotation mechanism, the tray rotation mechanism being disposed within a reaction chamber of a semiconductor processing device, a wafer tray assembly being disposed on top of the tray rotation mechanism, the tray rotation mechanism being used to drive the wafer tray assembly to rotate, the wafer tray assembly being used to carry a wafer, and a heating device being disposed below the wafer tray assembly, characterized in that, The gas distribution adapter ring includes: The ring body, wherein the wafer tray assembly is disposed on the ring body; A first purge gas channel is provided within the ring body and includes a purge gas outlet for blowing gas into the area between the bottom of the wafer tray assembly and the top of the heating device.

2. The gas distribution adapter ring as described in claim 1, characterized in that, The purge outlet is located on the outer wall of the gas distribution adapter ring.

3. The gas distribution adapter ring as described in claim 2, characterized in that, The first purge gas channel further includes a purge inlet end, which is disposed at the top of the gas distribution adapter ring or on the inner side wall of the gas distribution adapter ring.

4. The gas distribution adapter ring as described in claim 3, characterized in that, The number of the first purge gas channels is at least three.

5. The gas distribution adapter ring as described in claim 4, characterized in that, Multiple first purge gas channels are evenly distributed along the circumference of the ring body.

6. The gas distribution adapter ring as described in claim 1, characterized in that, The ring body also includes multiple first driving gas channels, which are used to drive the wafer to rotate.

7. The gas distribution adapter ring as described in claim 6, characterized in that, The first purge gas channel and the first drive gas channel are set separately from each other.

8. The gas distribution adapter ring as described in claim 1, characterized in that, The ring body has multiple positioning grooves, and the wafer tray assembly has multiple positioning protrusions; or, the ring body has multiple positioning protrusions, and the wafer tray assembly has multiple positioning grooves; the connection between the gas distribution adapter ring and the wafer tray assembly is achieved through the cooperation of the positioning protrusions and positioning grooves.

9. The gas distribution adapter ring as described in claim 1, characterized in that, The tray rotation mechanism further includes: a support sleeve and a pull rod assembly disposed within the support sleeve; the gas distribution adapter ring is disposed at the top of the support sleeve; the pull rod assembly is used to tighten the gas distribution adapter ring and the wafer tray assembly; the ring body also has multiple slots disposed at the positions where the ring body contacts the pull rod assembly.

10. A tray rotation mechanism disposed within a reaction chamber of a semiconductor processing apparatus and connected to a driver disposed at the bottom of the reaction chamber, wherein a wafer tray assembly for supporting wafers is disposed at the top of the tray rotation mechanism, characterized in that, The tray rotation mechanism includes: The gas distributor is connected to the driver. Under the drive force output by the driver, the gas distributor drives the entire tray rotation mechanism to rotate. The gas distributor has multiple second purge gas channels, which are connected to the purge gas source. A support sleeve is disposed on the gas distributor seat. The support sleeve has an inner cavity area, and the inner cavity area of ​​the rotating mechanism is connected to the second purge gas channel. The gas distribution adapter ring as described in any one of claims 1-9 has a first purge gas channel, which communicates with the inner cavity region, so that purge gas from the second purge gas channel can reach the region between the bottom of the wafer tray assembly and the top of the heating device. A pull rod assembly, one end of which is fixedly connected to the gas distribution seat, and the other end of which is connected to the gas distribution adapter ring and the wafer tray assembly respectively, is used to tighten the gas distribution adapter ring and the wafer tray assembly.

11. The pallet rotating mechanism as described in claim 10, characterized in that, The top of the pull rod assembly has multiple connecting rods, the ends of which are embedded in the gas distribution adapter ring to provide a downward pulling force to press the gas distribution adapter ring.

12. The pallet rotating mechanism as described in claim 10, characterized in that, The ring body also includes: multiple first driving gas channels; multiple second driving gas channels are provided inside the cylinder wall of the support sleeve, the outlet end of the second driving gas channel is connected to the inlet end of the first driving gas channel; multiple third driving gas channels are provided inside the gas distribution seat, the inlet end of the third driving gas channel is connected to the driving gas source, and the outlet end of the third driving gas channel is connected to the inlet end of the second driving gas channel.

13. A semiconductor processing apparatus, characterized in that, Include: reaction chamber; The tray rotation mechanism as described in any one of claims 10-12 is disposed within the reaction chamber; A driver, which is located at the bottom of the reaction chamber and connected to the bottom of the tray rotation mechanism, is used to drive the tray rotation mechanism to rotate; A wafer tray assembly is disposed on top of the tray rotation mechanism and can rotate with the tray rotation mechanism. The wafer tray assembly is used to carry one or more wafers. A heating device is disposed below the wafer tray assembly for heating the wafer tray assembly.

14. The semiconductor processing apparatus as claimed in claim 13, characterized in that, The wafer tray assembly includes: A tray, which is disposed on top of the gas distribution adapter ring, the tray having a first central hole; Multiple wafer pedestals are evenly distributed on the tray; A tray cover is disposed above the tray. The tray cover has a second central hole for accommodating a clamping cover. A plurality of wafer through holes are evenly distributed on the tray cover for accommodating wafer bases. A clamping cover is disposed on the tray, located above the first central hole of the tray. The clamping cover is fixedly connected to the pull rod assembly for fixing the wafer tray assembly to the tray rotation mechanism.

15. The semiconductor processing apparatus as claimed in claim 14, characterized in that, The bottom of the tray has an annular slope that slopes away from the outer wall of the gas distribution ring, and the angle between the annular slope and the horizontal plane is 135° to 170°.

16. The semiconductor processing apparatus as claimed in claim 14, characterized in that, The top of the gas distribution adapter ring is provided with a purging air inlet; a gap is reserved between the pressing cover plate and the top of the gas distribution adapter ring so that the purging gas in the support sleeve can enter the purging air inlet at the top of the gas distribution adapter ring.

17. The semiconductor processing apparatus as claimed in claim 14, characterized in that, The tray includes multiple positioning protrusions that match the positioning grooves on the gas distribution adapter ring. The positioning protrusions are embedded in the positioning grooves to achieve a positioning connection between the wafer tray assembly and the tray rotation mechanism.

18. The semiconductor processing apparatus as claimed in claim 14, characterized in that, The gas distribution and transfer ring is further provided with a first driving gas channel; the tray includes: multiple fourth driving gas channels, the fourth driving gas channels being connected to the first driving gas channels in the gas distribution and transfer ring.

19. The semiconductor processing apparatus as claimed in claim 13, characterized in that, The semiconductor processing device further includes a gas source, and the gas pump includes a purge gas source and a drive gas source; The purge gas source is connected to the second purge gas channel on the gas distributor via a pipeline to provide purge gas. The gas distributor is provided with a third driving gas channel; the driving gas source is connected to the third driving gas channel in the gas distributor through a pipeline to provide driving gas.

20. The semiconductor processing apparatus as claimed in claim 13, characterized in that, The semiconductor processing apparatus further includes: An air intake device is located at the top of the reaction chamber; An air extraction device is located at the bottom of the reaction chamber.

Images