A gallium arsenide solar cell and a preparation method and application thereof

Abstract

The application discloses a gallium arsenide solar cell and a preparation method and application thereof. The gallium arsenide solar cell comprises a first electrode layer, a GaAs substrate, a PEDOT:PSS layer or a carbon nanotube layer, an indium phosphide quantum dot layer, an insulating layer and a second electrode layer which are sequentially stacked, the insulating layer and the second electrode layer are both provided with a window, and the window on the insulating layer at least partially overlaps with the window on the second electrode layer. The gallium arsenide solar cell has the advantages of high photoelectric conversion efficiency, wide spectral utilization range and high photoelectric current density, and has the advantages of simple preparation process, low production cost and suitability for large-scale industrial application.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a gallium arsenide solar cell and a preparation method and application thereof. Background Art

[0002] Solar cells are semiconductor components that efficiently absorb solar energy and convert it into electricity, effectively utilizing solar energy, nature's most abundant clean energy source. GaAs, a direct-bandgap semiconductor material with a bandgap of 1.42 eV, offers advantages over traditional silicon, such as higher theoretical efficiency, higher carrier mobility, and enhanced radiation resistance, making it an ideal material for the production of high-efficiency solar cells. However, existing gallium arsenide solar cells generally suffer from low photoelectric conversion efficiency, low photocurrent density, a narrow spectral range (limited by substrate characteristics), complex fabrication processes, and high production costs, making them unable to fully meet the growing demands of practical applications.

[0003] Therefore, it is of great significance to develop a gallium arsenide solar cell with high photoelectric conversion efficiency, wide spectral utilization range, high photocurrent density, simple preparation process and low production cost. Summary of the Invention

[0004] The purpose of the present invention is to provide a gallium arsenide solar cell and a preparation method and application thereof.

[0005] The technical solution adopted by the present invention is:

[0006] A gallium arsenide solar cell comprises a first electrode layer, an N-type GaAs substrate, a PEDOT:PSS layer or a carbon nanotube layer, an indium phosphide quantum dot layer, an insulating layer, and a second electrode layer stacked in sequence; the insulating layer and the second electrode layer are both provided with windows, and the windows on the insulating layer at least partially overlap with the windows on the second electrode layer.

[0007] Preferably, the first electrode layer is composed of at least one of gold, titanium, nickel and germanium.

[0008] Preferably, the thickness of the first electrode layer is 100 nm to 150 nm.

[0009] Preferably, the N-type GaAs substrate comprises a first N-type GaAs layer, an In 0.48 Ga 0.52 P layer and a second N-type GaAs layer.

[0010] Preferably, the thickness of the first N-type GaAs layer is 300 μm to 380 μm.

[0011] Preferably, the In 0.48 Ga0.52 The thickness of the P layer is 40-60 nm.

[0012] Preferably, the thickness of the second N-type GaAs layer is 3.5-5 μm.

[0013] Preferably, the thickness of the PEDOT:PSS layer is 100-130 nm.

[0014] Preferably, the thickness of the carbon nanotube layer is 80-120 nm.

[0015] Preferably, the particle size of the indium phosphide quantum dots in the indium phosphide quantum dot layer is 5-7 nm.

[0016] Preferably, the thickness of the indium phosphide quantum dot layer is 10-30 nm.

[0017] Preferably, the composition of the insulating layer is at least one of aluminum oxide, silicon dioxide, and silicon nitride.

[0018] Preferably, the thickness of the insulating layer is 100-120 nm.

[0019] Preferably, the composition of the second electrode layer is at least one of silver, gold, and titanium.

[0020] Preferably, the thickness of the second electrode layer is 100-120 nm.

[0021] A method for preparing a gallium arsenide solar cell as described above comprises the following steps:

[0022] 1) depositing an electrode metal on one side of an N-type GaAs substrate, and then annealing to form a first electrode layer;

[0023] 2) coating a PEDOT:PSS dispersion or transferring a carbon nanotube film on the side of the N-type GaAs substrate that is away from the first electrode layer, and then annealing to form a PEDOT:PSS layer or a carbon nanotube layer;

[0024] 3) coating an indium phosphide quantum dot dispersion on the surface of the PEDOT:PSS layer or the carbon nanotube layer, and then annealing to form an indium phosphide quantum dot layer;

[0025] 4) depositing an insulating material on the surface of the indium phosphide quantum dot layer to form an insulating layer;

[0026] 5) depositing an electrode metal on the surface of the insulating layer to form a second electrode layer, thereby obtaining a gallium arsenide solar cell.

[0027] Preferably, the annealing in step 1) is performed in a nitrogen atmosphere or a vacuum atmosphere at a temperature of 300-400°C for 20-50 s.

[0028] Preferably, the coating method in step 2) is spin coating.

[0029] Preferably, the spin coating is performed at a spin coater speed of 4000 rpm to 6000 rpm, and the spin coating time is 20 s to 60 s.

[0030] Preferably, the annealing in step 2) is performed at a temperature of 100° C. to 150° C., and the annealing time is 5 min to 20 min.

[0031] Preferably, the coating method in step 3) is spin coating.

[0032] Preferably, the spin coating is performed at a spin coater speed of 4000 rpm to 6000 rpm, and the spin coating time is 20 s to 60 s.

[0033] Preferably, the solvent in the indium phosphide quantum dot dispersion in step 3) is at least one of ethanol, toluene, and tetrachloromethane.

[0034] Preferably, the annealing in step 3) is performed in a nitrogen atmosphere or a vacuum atmosphere at a temperature of 60° C. to 90° C., and the annealing time is 2 min to 10 min.

[0035] An energy storage device comprises the above-mentioned gallium arsenide solar cell.

[0036] The beneficial effects of the present invention are as follows: the gallium arsenide solar cell of the present invention has the advantages of high photoelectric conversion efficiency, wide spectrum utilization range, high photocurrent density, etc., and its preparation process is simple and the production cost is low, and it is suitable for large-scale industrial application.

[0037] Specifically:

[0038] 1) The gallium arsenide solar cell of the present invention incorporates a quantum dot layer made of indium phosphide quantum dots. The indium phosphide quantum dots can convert ultraviolet light, which is difficult for the gallium arsenide solar cell to absorb and utilize, into visible light that can be absorbed and utilized by the gallium arsenide solar cell, thereby increasing the photocurrent of the gallium arsenide solar cell and broadening the spectral utilization range of the gallium arsenide solar cell. In addition, the energy band characteristics of the indium phosphide quantum dots can form an effect similar to a front field layer on the surface of the gallium arsenide solar cell, which can promote the separation of photogenerated electron-hole pairs within the gallium arsenide solar cell, thereby improving the photoelectric conversion efficiency of the gallium arsenide solar cell.

[0039] 2) The gallium arsenide solar cell of the present invention has a simple preparation process and low production cost, does not require expensive production equipment, and is suitable for large-scale industrial application. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 Schematic diagram of the structure of the gallium arsenide solar cell of Example 1.

[0041] Description of the accompanying drawings: 10, first electrode layer; 20, N-type GaAs substrate; 201, first N-type GaAs layer; 202, In 0.48 Ga 0.52 P layer; 203, second N-type GaAs layer; 30, PEDOT:PSS layer; 40, indium phosphide quantum dot layer; 50, insulating layer; 60, second electrode layer.

[0042] Figure 2 This is the photoluminescence spectrum of the indium phosphide quantum dot layer.

[0043] Figure 3 This is the simulation result of indium phosphide quantum dots enhancing the electric field in gallium arsenide solar cells obtained using Silvaco TCAD software.

[0044] Figure 4 1 and 2 are IV curves of the gallium arsenide solar cell of Example 1 and the gallium arsenide solar cell of the comparative example.

[0045] Figure 5 EQE curves of the gallium arsenide solar cell of Example 1 and the gallium arsenide solar cell of the comparative example. DETAILED DESCRIPTION

[0046] The present invention will be further explained and illustrated below with reference to specific embodiments.

[0047] Example 1:

[0048] A gallium arsenide solar cell (schematic diagram as shown Figure 1 As shown), it is composed of a first electrode layer 10, an N-type GaAs substrate 20, a PEDOT:PSS layer 30, an indium phosphide quantum dot layer 40, an insulating layer 50 and a second electrode layer 60 stacked in sequence; the N-type GaAs substrate 20 is composed of a first N-type GaAs layer 201, an In 0.48 Ga 0.52 The P layer 202 and the second N-type GaAs layer 203 are stacked in sequence; the insulating layer 50 and the second electrode layer 60 are both provided with windows, and the windows on the insulating layer 50 completely overlap with the windows on the second electrode layer 60.

[0049] The preparation method of the above-mentioned gallium arsenide solar cell is as follows:

[0050] 1) On an N-type GaAs substrate (composed of a first N-type GaAs layer with a thickness of 350 μm, an In 0.48 Ga 0.52A P layer and a second N-type GaAs layer with a thickness of 3.5 μm are stacked in sequence, and a gold layer with a thickness of 120 nm is evaporated on a single side (the side close to the first N-type GaAs layer) of the substrate (which is cleaned before use), and then annealed at 330°C in a nitrogen atmosphere for 30 seconds to form the first electrode layer;

[0051] 2) Spin coating a PEDOT:PSS dispersion (composed of PEDOT:PSClevios PH1000 and isopropyl alcohol in a volume ratio of 2:1) on the side of the N-type GaAs substrate away from the first electrode layer at a spin coater speed of 6000 rpm for 30 seconds, followed by annealing at 140°C for 10 minutes to form a PEDOT:PSS layer with a thickness of 110 nm;

[0052] 3) Spin coating an indium phosphide quantum dot dispersion (15 mg / mL, toluene solvent; particle size of the indium phosphide quantum dots 5 nm to 7 nm) on the surface of the PEDOT:PSS layer at a spin coater speed of 5000 rpm for 30 seconds, followed by annealing at 60°C in a nitrogen atmosphere for 5 minutes to form a 20 nm thick indium phosphide quantum dot layer;

[0053] 4) depositing an aluminum oxide layer with a thickness of 100 nm on the surface of the indium phosphide quantum dot layer to form an insulating layer;

[0054] 5) A silver layer with a thickness of 120 nm is evaporated on the surface of the insulating layer to form a second electrode layer, thereby obtaining a gallium arsenide solar cell.

[0055] Comparative Example:

[0056] A gallium arsenide solar cell is identical to the gallium arsenide solar cell of embodiment 1 except that it does not contain an indium phosphide quantum dot layer.

[0057] Performance testing:

[0058] 1) Spin-coat an indium phosphide quantum dot dispersion (concentration of 15 mg / mL, solvent: toluene; particle size of the indium phosphide quantum dots: 5 nm to 7 nm) onto a cleaned gallium arsenide substrate at a spin coater speed of 5000 rpm for 30 s, followed by drying to form an indium phosphide quantum dot layer. The indium phosphide quantum dot layer is then subjected to a photoluminescence test at an excitation wavelength of 375 nm. The photoluminescence spectrum of the indium phosphide quantum dot layer is shown below. Figure 2 shown.

[0059] Depend on Figure 2It can be seen that the indium phosphide quantum dot layer can absorb ultraviolet light with a wavelength of 375nm, and has a luminescence peak at the band gap of 2.6eV~2.9eV, indicating that blue-green light with a wavelength of 427nm~476nm can be emitted at this time, thereby realizing the conversion from ultraviolet light to visible light, which can provide great help for gallium arsenide solar cells to absorb ultraviolet light.

[0060] 2) Using Silvaco TCAD software to build a GaAs solar cell model, the simulation results of the enhanced electric field of InP quantum dots in GaAs solar cells are shown as follows: Figure 3 As shown in the figure, the left part is the structure of the simulated GaAs solar cell, which is composed of the InP quantum dots (InP QDs) layer, the PEDOT:PSS layer, the N-type GaAs substrate (the second N-type GaAs layer, the InP QDs layer, the PEDOT:PSS layer, and the N-type GaAs substrate. 0.48 Ga 0.52 P layer and the first N-type GaAs layer), the metal electrodes on the front and back sides are not shown in the simulation structure. The right part is the electric field distribution of the circled part in the left figure (the interface between the InP QDs layer, PEDOT:PSS layer and the N-type GaAs substrate).

[0061] Depend on Figure 3 It can be seen that: in the right figure, the downward-pointing peak represents the direction of the electric field from bottom to top in the structure of the left figure (i.e., the bottom is positively charged and the top is negatively charged), which means that there are electric fields pointing from the PEDOT:PSS layer to the InP QDs layer and from the N-type GaAs substrate to the PEDOT:PSS layer. Under the action of these electric fields, electrons can move to the back of the GaAs solar cell and holes can move to the front of the GaAs solar cell, thereby reducing the recombination of photogenerated electron-hole pairs. The simulation results show that the presence of the InP QDs layer can enhance the electric field effect in a superimposed manner, thereby improving the device performance of the GaAs solar cell.

[0062] 3) The IV curves of the gallium arsenide solar cell of Example 1 and the gallium arsenide solar cell of the comparative example are as follows: Figure 4 (The results are shown in the following figure: using a NEWPORT solar simulator at room temperature and standard conditions, with AM1.5 simulated sunlight irradiation test results, where the vertical axis intercept represents the short-circuit current density of the solar cell, and the horizontal axis intercept represents the open-circuit voltage of the solar cell).

[0063] Depend on Figure 4 It can be seen that compared with the GaAs solar cell of the comparative example, the open circuit voltage of the GaAs solar cell of Example 1 is increased from 0.718V to 0.723V, and the short circuit current density is increased from 24.737mA / cm 2 Increased to 28.222mA / cm 2, the fill factor increased from 62.125% to 74.243%, and the photoelectric conversion efficiency increased from 11.036% to 15.159%, indicating that the gallium arsenide solar cells modified with indium phosphide quantum dots can achieve higher photocurrent density (i.e. short-circuit current density) and higher photoelectric conversion efficiency.

[0064] 4) The external quantum efficiency (EQE) curves of the gallium arsenide solar cell of Example 1 and the gallium arsenide solar cell of the comparative example are as follows: Figure 5 (The horizontal axis represents the use of incident light of different wavelengths to irradiate the GaAs solar cell, and the vertical axis represents the utilization of photons of the wavelength by the GaAs solar cell. The larger the coordinate value, the higher the utilization rate).

[0065] Depend on Figure 5 It can be seen that the red peak indicates that at around 325nm, the utilization rate of photons in this wavelength range will increase when the InP quantum dot layer is present, indicating that the presence of the InP quantum dot layer can absorb light in the ultraviolet band, thereby enhancing the photocurrent of the GaAs solar cell, that is, it can expand the spectral utilization range of the GaAs solar cell.

[0066] Example 2:

[0067] A gallium arsenide solar cell comprises a first electrode layer, an N-type GaAs substrate, a carbon nanotube layer, an indium phosphide quantum dot layer, an insulating layer, and a second electrode layer stacked in sequence; the insulating layer and the second electrode layer are both provided with windows, and the windows on the insulating layer completely overlap with the windows on the second electrode layer.

[0068] The preparation method of the above-mentioned gallium arsenide solar cell is as follows:

[0069] 1) A gold layer with a thickness of 120 nm was evaporated on one side of an N-type GaAs substrate (an ordinary N-type GaAs substrate was cleaned before use), and then annealed at 330° C. in a nitrogen atmosphere for 30 seconds to form a first electrode layer;

[0070] 2) transferring a carbon nanotube film (prepared by filtration from a 10 mg / mL carbon nanotube dispersion) onto the side of the N-type GaAs substrate away from the first electrode layer, and then annealing the film at 130°C for 20 minutes to form a 100 nm thick carbon nanotube layer;

[0071] 3) Spin coating the surface of the carbon nanotube layer with an indium phosphide quantum dot dispersion (concentration of 15 mg / mL, solvent: toluene; particle size of the indium phosphide quantum dots: 5 nm to 7 nm) at a spin coater speed of 5000 rpm for 30 seconds, followed by annealing at 60°C in a nitrogen atmosphere for 5 minutes to form a 20 nm thick indium phosphide quantum dot layer;

[0072] 4) depositing an aluminum oxide layer with a thickness of 100 nm on the surface of the indium phosphide quantum dot layer to form an insulating layer;

[0073] 5) A silver layer with a thickness of 120 nm is evaporated on the surface of the insulating layer to form a second electrode layer, thereby obtaining a gallium arsenide solar cell.

[0074] After testing (testing method is the same as that of Example 1), the performance of the gallium arsenide solar cell of this embodiment is very close to that of the gallium arsenide solar cell of Example 1.

[0075] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be considered as equivalent replacement methods and are included in the scope of protection of the present invention.

Claims

1. A gallium arsenide solar cell, characterized in that: The invention comprises a first electrode layer, an N-type GaAs substrate, a PEDOT:PSS layer or a carbon nanotube layer, an indium phosphide quantum dot layer, an insulating layer and a second electrode layer which are stacked in sequence; the insulating layer and the second electrode layer are both provided with windows, and the windows on the insulating layer at least partially overlap with the windows on the second electrode layer; the particle size of the indium phosphide quantum dots in the indium phosphide quantum dot layer is 5nm to 7nm; the N-type GaAs substrate comprises a first N-type GaAs layer, an Indium Phosphide quantum dot layer which are stacked in sequence, and a PEDOT:PSS layer or a carbon nanotube layer, an indium phosphide quantum dot layer, an insulating layer and a second electrode layer; the insulating layer and the second electrode layer are both provided with windows, and the windows on the insulating layer and the windows on the second electrode layer at least partially overlap; the particle size of the indium phosphide quantum dots in the indium phosphide quantum dot layer is 5nm to 7nm; the N-type GaAs substrate comprises a first N-type GaAs layer, an Indium Phosphide quantum dot layer which are stacked in sequence, and a PEDOT:PSS layer or a carbon nanotube layer, an indium phosphide quantum dot layer, an insulating layer and a second electrode layer; the insulating layer and the second electrode layer are both provided with windows, and the windows on the insulating layer and the second electrode layer at least partially overlap with each other; the particle size of the indium phosphide quantum dots in the indium phosphide quantum dot layer is 5nm to 7nm; the N-type GaAs substrate comprises a first N-type GaAs layer, an Indium Phosphide quantum dot ... 0.48 Ga 0.52 P layer and a second N-type GaAs layer; the thickness of the first N-type GaAs layer is 300 μm to 380 μm; the In 0.48 Ga 0.52 The thickness of the P layer is 40nm to 60nm; the thickness of the second N-type GaAs layer is 3.5μm to 5μm; the component of the insulating layer is at least one of aluminum oxide, silicon dioxide, and silicon nitride; the thickness of the insulating layer is 100nm to 120nm.

2. The gallium arsenide solar cell according to claim 1, characterized in that: The thickness of the indium phosphide quantum dot layer is 10nm to 30nm; the thickness of the PEDOT:PSS layer is 100nm to 130nm; and the thickness of the carbon nanotube layer is 80nm to 120nm.

3. The gallium arsenide solar cell according to claim 1, characterized in that: The first electrode layer is composed of at least one of gold, titanium, nickel, and germanium; the thickness of the first electrode layer is 100nm to 150nm; the second electrode layer is composed of at least one of silver, gold, and titanium; the thickness of the second electrode layer is 100nm to 120nm.

4. A method for preparing a gallium arsenide solar cell according to any one of claims 1 to 3, characterized in that: The following steps are involved: 1) Depositing electrode metal on one side of an N-type GaAs substrate and then annealing to form the first electrode layer; 2) coating a PEDOT:PSS dispersion or transferring a carbon nanotube film on the side of the N-type GaAs substrate away from the first electrode layer, and then annealing to form a PEDOT:PSS layer or a carbon nanotube layer; 3) coating an indium phosphide quantum dot dispersion on the surface of the PEDOT:PSS layer or the carbon nanotube layer, and then annealing to form an indium phosphide quantum dot layer; 4) depositing an insulating material on the surface of the indium phosphide quantum dot layer to form an insulating layer; 5) Electrode metal is deposited on the surface of the insulating layer to form a second electrode layer, thereby obtaining a gallium arsenide solar cell.

5. The preparation method according to claim 4, characterized in that: The annealing in step 1) is carried out in a nitrogen atmosphere or a vacuum atmosphere at a temperature of 300° C. to 400° C., and the annealing time is 20 seconds to 50 seconds; the annealing in step 2) is carried out in a temperature of 100° C. to 150° C., and the annealing time is 5 minutes to 20 minutes; the annealing in step 3) is carried out in a nitrogen atmosphere or a vacuum atmosphere at a temperature of 60° C. to 90° C., and the annealing time is 2 minutes to 10 minutes.

6. An energy storage device, characterized in that: A gallium arsenide solar cell comprising the gallium arsenide solar cell according to any one of claims 1 to 3.

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