Substrate supercritical processing apparatus
By employing a spiral fluid distribution structure in the supercritical substrate processing device, the problem of uneven drying on the substrate surface is solved, achieving more efficient drying effect and temperature uniformity, reducing device complexity and maintenance costs, and adapting to different substrate shapes.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU XINMENG SEMICON EQUIP CO LTD
- Filing Date
- 2024-04-18
- Publication Date
- 2026-05-22
AI Technical Summary
In existing supercritical drying devices, the supercritical fluid has poor uniformity in drying across the substrate surface, making it difficult to control the fluid's residence time and flow rate. This results in uneven drying of the substrate surface, which may cause surface defects.
Design a supercritical substrate processing device that employs a fluid distribution structure with the output ports arranged in a spiral shape, forming a spiral flow field that diffuses from the center of the fluid distribution structure outwards, ensuring that the process fluid uniformly covers the substrate surface and increasing the residence time of the fluid on the substrate.
It achieves uniform drying of the substrate surface, improves drying efficiency and temperature uniformity, reduces equipment complexity and maintenance costs, adapts to substrates of different sizes and shapes, and improves energy efficiency.
Smart Images
Figure CN118328651B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of substrate processing technology, and more specifically to a supercritical substrate processing device. Background Technology
[0002] In advanced semiconductor manufacturing processes, supercritical carbon dioxide has been developed for drying wafers or substrates. Utilizing the low surface tension and other properties of supercritical carbon dioxide, it can effectively remove moisture or solvents such as IPA remaining in the micro-nano structures on the substrate surface during cleaning processes, without causing the micro-nano structures to collapse or stick together. However, existing supercritical drying devices rely on the spontaneous diffusion of supercritical fluid within the processing space, resulting in poor uniformity of drying across the substrate surface. Furthermore, the varying supercritical fluid concentration across different areas of the substrate makes it difficult to control the residence time and flow rate of the supercritical fluid on the substrate.
[0003] Therefore, it is necessary to improve the existing technology to overcome the aforementioned defects. Summary of the Invention
[0004] In view of the above, this application provides an embodiment to solve at least one problem existing in the background art. The purpose of this application is achieved through the following technical solution: a substrate supercritical processing apparatus, comprising:
[0005] A housing that provides a processing space for processing substrates, the housing having a supply port and a discharge port;
[0006] A support structure for supporting the substrate in the processing space; and
[0007] A fluid distribution structure, connected to the supply port, is used to deliver supercritical fluid to process the substrate. The fluid distribution structure has a plurality of output ports facing the substrate. The fluid distribution structure has a lower surface, and the plurality of output ports are located on the lower surface. The supercritical fluid flows out from the plurality of output ports.
[0008] The output ports can be divided into multiple groups of output ports. Each group of output ports extends from the center of the fluid distribution structure outward in a spiral arrangement. The supercritical fluid flowing out of the multiple groups of output ports can generate a spiral flow field that diffuses from the center of the fluid distribution structure outward.
[0009] By dividing the output ports into multiple groups, each group extending spirally outward from the center of the fluid distribution structure, the process fluid flowing from these multiple output ports generates a spiral flow field that diffuses outward from the center of the fluid distribution structure. This flow field helps to uniformly cover the entire substrate surface, resulting in more uniform substrate drying and avoiding surface defects caused by uneven drying due to uneven process fluid distribution. Furthermore, the spiral process fluid has a tendency to rotate from the center towards the outer edge of the substrate, allowing the fluid to move from the center outward, thereby increasing the residence time of the process fluid on the substrate. This allows the process fluid to more effectively and thoroughly dissolve and remove residual liquid from the substrate surface, thus improving the substrate drying efficiency and effect. The increased residence time of the process fluid on the substrate also enables more effective heat exchange, contributing to improved uniformity of the substrate surface temperature.
[0010] Furthermore, since the fluid flow spontaneously forms a spiral shape, the use of mechanical rotating parts to achieve the spiral fluid is avoided, reducing the complexity of the supercritical substrate processing device, lowering maintenance requirements and costs, and reducing potential contamination problems due to mechanical wear. The spontaneously formed spiral flow field also reduces the demand for external energy input, thereby improving energy efficiency. The fluid distribution structure in this application relies on fluid dynamics rather than being limited by mechanical structures. Therefore, it is not constrained by the shape and size requirements of mechanical structures and can adapt to substrates of different sizes and shapes, facilitating mass production and manufacturing with high flexibility.
[0011] Optionally, in the above-mentioned supercritical substrate processing device, the fluid distribution structure further includes a plurality of input ports connected to the supply port, and the input ports and the output ports are connected in a one-to-one correspondence to form a plurality of conveying channels.
[0012] Optionally, in the above-mentioned supercritical substrate processing apparatus, the conveying channel is oblique cylindrical.
[0013] Optionally, in the above-described supercritical substrate processing apparatus, the conveying channel is constructed as follows:
[0014] Using a first plane parallel to the lower surface as a reference plane, a first endpoint, a second endpoint, and a third endpoint are defined on the reference plane. The third endpoint is the intersection of the central axis of the fluid distribution structure and the reference plane. The conveying channel is constructed by using the orthographic projection of the second endpoint onto the plane where the lower surface is located and the line connecting the first endpoint as a path, and using a preset shape as the outline.
[0015] The distance between the first endpoint and the third endpoint is less than the distance between the second endpoint and the third endpoint; the ratio of the distance between the first endpoint and the second endpoint to the distance between the reference surface and the lower surface is less than or equal to a first preset value.
[0016] Optionally, in the above-mentioned substrate supercritical processing apparatus, the first preset value is less than tan30°.
[0017] Optionally, in the above-mentioned substrate supercritical processing device, multiple sets of output ports are arrayed with the central axis of the fluid distribution structure as the array axis.
[0018] Optionally, in the above-mentioned supercritical substrate processing apparatus, in each set of output ports, in the conveying channels corresponding to any two adjacent output ports, the first endpoint of one of the conveying channels is located on the extension line of the line connecting the first endpoint and the second endpoint of the other conveying channel.
[0019] Optionally, the above-mentioned supercritical substrate processing device includes an air inlet communicating with the output port;
[0020] Using the lower surface of the fluid distribution structure as a projection plane, the processing device includes a buffer cavity that connects the air inlet and several input ports, and the orthographic projection of the buffer cavity onto the projection plane covers several of the output ports.
[0021] Optionally, the above-mentioned supercritical substrate processing device includes an air inlet communicating with the output port;
[0022] The processing device includes several guide pipes connecting the air inlet and several inlets.
[0023] Optionally, in the above-mentioned supercritical substrate processing device, the preset pattern is a circle with a diameter ranging from 0.1 to 5 mm.
[0024] Compared with the prior art, this application has the following beneficial effects:
[0025] This application divides the output ports into multiple groups, with each group of output ports extending spirally from the center of the fluid distribution structure outwards. This allows the process fluid flowing out of the multiple groups of output ports to generate a spiral fluid that diffuses from the center of the fluid distribution structure outwards. This flow field helps the process fluid to uniformly cover the entire substrate surface. Uniform fluid coverage is crucial for achieving consistent drying results and can avoid substrate surface defects caused by uneven drying.
[0026] On the other hand, the spiral flow field increases the residence time of the supercritical fluid on the substrate, thereby enabling the supercritical fluid to dissolve and remove residual solvents on the substrate surface more effectively and completely, thus improving drying efficiency and drying effect.
[0027] On the other hand, the spiral flow field increases the contact time between the supercritical fluid and the substrate, thereby enabling more efficient heat exchange and helping to improve the uniformity of the substrate surface temperature. Attached Figure Description
[0028] Figure 1 This is a schematic diagram of the substrate processing device in an embodiment of this application;
[0029] Figure 2 This is a cross-sectional schematic diagram of the substrate supercritical processing device in the embodiments of this application;
[0030] Figure 3 This is a bottom view of the fluid distribution structure in an embodiment of this application;
[0031] Figure 4 This is a perspective view of the fluid distribution structure in an embodiment of this application;
[0032] Figure 5 This is a side perspective view of the fluid distribution structure in an embodiment of this application;
[0033] Figure 6 This is a perspective view of the fluid distribution structure in another direction in the embodiments of this application;
[0034] Figure 7 yes Figure 6 A partially enlarged view of the fluid distribution structure described above;
[0035] Figure 8 This is another perspective view of the fluid distribution structure in the embodiments of this application;
[0036] Figure 9 This is a simulation diagram of the process fluid flowing out of the fluid distribution structure in the embodiments of this application.
[0037] Among them, 100 is the feeding unit, 200 is the processing unit, 300 is the control unit, 400 is the mobile robot, and 500 is the unloading unit;
[0038] 201 - Cleaning chamber; 202 - Drying chamber;
[0039] 203-Substrate supercritical processing device;
[0040] 10-Housing, 101-Upper housing, 102-Lower housing, 103-Processing space, 104-Supply port, 105-Discharge port;
[0041] 20 - Supporting structure;
[0042] 30-Fluid distribution structure, 301-Air inlet, 302-Inner groove, 3021-Ventilation port, 303-Guide pipe, 304-Outlet, 307-Central shaft, 308-Lower surface;
[0043] 40-substrate;
[0044] 50 - Reference plane, 501 - First endpoint, 502 - Second endpoint, 503 - Third endpoint. Detailed Implementation
[0045] The exemplary embodiments disclosed in this application will now be described in more detail. Numerous specific details are set forth in the following description to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without one or more of these details. In other instances, to avoid confusion with this application, some technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.
[0046] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.
[0047] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used here for convenience to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of devices in use and operation.
[0048] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.
[0049] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solution of this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.
[0050] This application provides a supercritical substrate processing device for processing a substrate 40, such as performing mega-sound cleaning, two-fluid cleaning, and drying on the substrate 40.
[0051] In an alternative embodiment, please refer to Figure 1 The supercritical substrate processing equipment includes a loading unit 100, a processing unit 200, a control unit 300, a mobile robotic arm 400, and an unloading unit 500. The loading unit 100 removes the substrate 40 from its container and transfers it to the processing unit 200. The processing unit 200 performs various processing steps on the substrate 40. After processing in the processing unit 200, the substrate 40 is unloaded by the unloading unit 500. The control unit 300 controls the substrate processing equipment to execute the corresponding substrate 40 processing flow. In this embodiment, multiple loading units 100, processing units 200, and unloading units 500 can be provided to form multiple workstations. These workstations cooperate to improve the processing efficiency of the substrate 40. The substrate container can be an airtight container such as a FOUP (Front Open Unified Pod).
[0052] In the above embodiments, the loading unit 100 and the processing unit 200 are arranged along the X direction, and the loading unit 100 and the unloading unit 500 can be arranged along the Y direction, wherein the X direction and the Y direction are perpendicular to each other in the horizontal direction, that is, the loading unit 100 and the unloading unit 500 can be set on the same side of the substrate processing equipment. In this embodiment, the loading unit 100 and the unloading unit 500 each include two loading ports, and the substrate containers are respectively placed in the loading ports. The substrate 40 in the loading port is picked up and moved to the processing unit 200 by the moving robot 400, or the substrate 40 processed by the processing unit 200 is picked up and moved to the substrate container in the loading port by the moving robot 400.
[0053] In an optional embodiment, the processing unit 200 includes a plurality of process processing chambers, which may include a cleaning chamber 201 and a drying chamber 202. The cleaning chamber 201 can perform cleaning of the substrate 40, such as cleaning treatment using chemicals to remove foreign matter on the substrate 40, cleaning treatment using pure water to remove residual chemicals on the substrate 40, and cleaning treatment to remove impurities on the substrate 40.
[0054] Typically, after removing residual chemicals and impurities from the substrate 40 using pure water, the substrate 40 needs to be dried using IPA (isopropyl alcohol). However, IPA (isopropyl alcohol) generates significant surface tension during evaporation, which can damage the pattern on the surface of the substrate 40.
[0055] To prevent excessive tension from damaging the pattern on the substrate 40 during the removal of IPA (isopropanol), in this embodiment, the drying chamber 202 includes a substrate supercritical treatment device 203, which is used to perform a supercritical drying process on the substrate 40 to remove IPA from the substrate 40 and achieve the drying of the substrate 40.
[0056] The principle of supercritical drying is as follows: a substrate 40 is placed in a sealed cavity that can maintain high pressure and high temperature, and then supercritical fluid is supplied to the sealed cavity, so that it comes into contact with the surface of the substrate 40 to displace the liquid on the surface of the substrate 40. The liquid on the surface of the substrate 40 can be an organic solvent, developer solvent, etc.
[0057] It should be noted that in this embodiment, the supercritical fluid is supercritical carbon dioxide, and the liquid to be removed is IPA (isopropanol) on the substrate 40. Because supercritical carbon dioxide has high solubility and permeability, when supercritical carbon dioxide is supplied to the substrate 40, it penetrates into the pattern of the substrate 40 more easily than other supercritical fluids, which is more conducive to removing the IPA (isopropanol) remaining on the substrate 40 and the pattern of the substrate 40.
[0058] Specifically, such as Figure 2 As shown, the substrate supercritical processing device 203 includes a housing 10, a support structure 20, and a fluid distribution structure 30. The housing 10 provides a processing space 103 for processing the substrate 40. The housing 10 has a supply port 104 and a discharge port 105. The supply port 104 is used to communicate with an external process fluid supply device (not shown) to deliver external process fluid into the processing space 103. The discharge port 105 is used to discharge supercritical carbon dioxide after dissolving IPA (isopropanol). The support structure 20 is used to support the substrate 40 in the processing space 103. The support structure 20 has at least two support points for contact support with the back of the substrate 40 to reduce the contact area between the external structure and the substrate 40 and reduce contamination of the substrate 40. The fluid distribution structure 30 is connected to the supply port 104 and has a plurality of output ports 304 facing the substrate 40. The process fluid in the external process fluid supply device can enter the substrate supercritical processing device 203 from the supply port 104 and flow out from the plurality of output ports 304 to output the process fluid to the substrate 40, thereby realizing the processing of the substrate 40.
[0059] It should be noted that in this embodiment, the substrate supercritical processing device 203 further includes a pressure control structure (not shown) and a heating structure (not shown), which are used to control the pressure and temperature within the processing space 103, respectively. For example, the pressure control structure may include a pressurizing element and a pressure detection element to control and detect the pressure within the processing space, and the heating structure may include a heating element and a temperature detection element to control and detect the temperature within the processing space. This ensures that the substrate supercritical processing device 203 maintains the required pressure and temperature within the processing space during operation, achieving a better processing effect. In this embodiment, the specific structure and working principle of the pressure control structure and the heating structure are mature technologies in the field and will not be described in detail here.
[0060] More specifically, the housing 10 includes an upper housing 101 and a lower housing 102, which are connected vertically to form a processing space 103, and the support structure 20 is located within the processing space 103. Preferably, the supply port 104 is located on the upper housing 101 and at its center, and the discharge port 105 is located on the lower housing 102 and at its center. In other embodiments, the supply port 104 and the discharge port 105 may both be located on the upper housing 101 or both on the lower housing 102. This application does not specifically limit the location of the supply port 104 and the discharge port 105.
[0061] It is worth noting that, in this embodiment, reference Figure 3 , Figure 5 , Figure 6 as well as Figure 9 As shown, several output ports 304 extend outwards from the center of the lower surface 308 of the fluid distribution structure 30. Each group of output ports 304 extends outwards in a spiral shape from the central axis 307 of the fluid distribution structure 30. Figure 3 (The diagram shows a set of output ports with arrows and spirals), which enables the process fluid flowing out of multiple output ports 304 to generate a spiral flow field that diffuses from the center of the fluid distribution structure 30 to the surrounding area.
[0062] Specifically, the aforementioned output ports 304 can be divided into multiple groups of output ports 304, which are arranged in an array with the central axis 307 of the fluid distribution structure 30 as the array axis. It should be noted that in this embodiment, the fluid distribution structure 30 is cylindrical, and the central axis 307 is a straight line that divides the fluid distribution structure 30 into symmetrical parts. In other embodiments, the shape of the fluid distribution structure 30 is not specifically limited.
[0063] This configuration allows the spiral-shaped process fluid to evenly cover the entire surface of the substrate 40, resulting in more uniform drying of the substrate 40 and preventing surface defects caused by uneven drying due to uneven process fluid distribution. Furthermore, the spiral-shaped process fluid tends to rotate from the center towards the periphery of the substrate 40, increasing the residence time of the process fluid on the substrate 40. This allows the process fluid to more effectively and thoroughly dissolve and remove residual liquid from the surface of the substrate 40, thereby improving the drying efficiency and effect. Additionally, the increased residence time of the process fluid on the substrate 40 also enables more effective heat exchange, contributing to improved temperature uniformity on the substrate 40 surface.
[0064] Since the fluid flowing out of the fluid distribution structure 30 spontaneously forms a spiral shape, this design avoids using mechanical rotating parts to drive the fluid to rotate and form a spiral shape. This reduces the complexity of the entire device chamber, lowers maintenance requirements and costs, and reduces contamination of the substrate 40 caused by wear from mechanical mechanisms. Furthermore, the spontaneously formed spiral fluid reduces the need for external energy input, thereby improving energy efficiency. On the other hand, the fluid distribution structure 30 of this embodiment can adapt to substrates 40 of different sizes and types because it relies on fluid dynamics rather than mechanical structures. Therefore, it is not limited by the size of mechanical structures, which is more conducive to mass production and manufacturing, and offers high flexibility.
[0065] The fluid distribution structure 30 also includes an inlet (unlabeled) connected to the supply port; please refer to [reference needed]. Figures 4-6As shown, the input port and output port 304 are connected in a one-to-one correspondence to form several conveying channels (unlabeled). In this embodiment, the conveying channels are arranged in an oblique cylindrical shape. Please refer to... Figure 6 and Figure 7 As shown, the conveying channel is constructed as follows: Using the first plane of the lower surface 308 of the parallel fluid distribution structure 30 as a reference plane 50, a first endpoint 501, a second endpoint 502, and a third endpoint 503 are defined on the reference plane 50. The third endpoint 503 is the intersection of the central axis 307 of the fluid distribution structure 30 and the reference plane 50. The conveying channel is constructed using the orthographic projection of the second endpoint 502 onto the plane of the lower surface 308 and the line connecting the second endpoint 502 and the first endpoint 501 as the path, and a preset shape as the outline. In this embodiment, the preset shape is a circle with a diameter ranging from 0.1 to 5 mm. A conveying channel with this diameter range can deliver the process fluid to the substrate 40 at a suitable pressure without damaging the pattern on the substrate 40. In other embodiments, conveying channels with other diameter ranges or other shapes can also be used, as long as the above-mentioned effects are achieved.
[0066] To achieve better processing results, in this embodiment, each conveying channel is inclined. Specifically, the distance between the first endpoint 501 and the third endpoint 503 is less than the distance between the second endpoint 502 and the third endpoint 503. That is, the conveying channel is inclined relative to the reference plane 50. The greater the difference between the distance between the first endpoint 501 and the third endpoint 503 and the distance between the second endpoint 502 and the third endpoint 503, the greater the angle of inclination of the conveying channel relative to the reference plane 50. This angle is preferably greater than 0 degrees and less than 90 degrees. In this embodiment, it is preferably 30 degrees.
[0067] Furthermore, the ratio of the distance between the first endpoint 501 and the second endpoint 502 to the distance between the reference surface 50 and the lower surface 308 is less than or equal to a first preset value. That is, the distance between the reference surface 50 and the lower surface 308 is a fixed distance. The more the conveying channel tilts towards the outer edge, the larger the angle, and the shorter the distance between the first endpoint 501 and the second endpoint 502. Consequently, the ratio of this distance to the distance between the reference surface 50 and the lower surface 308 is also smaller. Preferably, the first preset value is less than tan30°. In other embodiments, the specific tilt angle of the conveying channel is not specifically limited and is determined according to the actual situation.
[0068] Further, refer to Figure 8 As shown, in each set of output ports 304, in any two adjacent output ports 304, the first end point 501 of one conveying channel is located on the extension line of the line connecting the first end point 501 and the second end point 502 of another conveying channel.
[0069] This configuration allows the fluid exiting from outlet 304 to flow obliquely downwards. The obliquely downward-flowing fluid can more effectively carry away the residual liquid on the surface of substrate 40 because the fluid exerts a force not only in the parallel direction on the surface of substrate 40 but also in the vertical direction. This enhances the mass transfer of the fluid near the surface of substrate 40, allowing the residual liquid on the surface of substrate 40 to diffuse into the supercritical fluid more quickly.
[0070] Presented above, for reference Figure 2 As shown, in this embodiment, the fluid distribution structure 30 also includes an air inlet 301, which connects the supply port 104 and the output port 304 to output the process fluid in the external process fluid supply device to the substrate 40 through the supply port and the output port 304.
[0071] Specifically, the substrate supercritical processing device 203 includes an inner groove 302 located at the center of the fluid distribution structure 30 and several guide pipes 303 connected to several output ports 304. Several vents 3021 are provided on the sidewall of the inner groove 302, connecting the air inlet 301 and the guide pipes 303. All guide pipes 303 are connected to conveying channels to directionally convey the process fluid to the input port and out through the output ports 304 onto the substrate 40. In this embodiment, the size and angle of the conveying channels are the same, and a total of 12 guide pipes 303 are provided, each connected to 7 conveying channels. In other embodiments, the specific number of guide pipes 303 and conveying channels is not limited.
[0072] In another embodiment, the substrate supercritical processing apparatus 203 includes a buffer chamber (not shown) connecting an air inlet 301 and several output ports 304. Using the plane containing the lower surface 308 of the fluid distribution structure 30 as a projection plane, the orthographic projection of the buffer chamber onto this plane covers the output ports 304. That is, the process fluid first enters the buffer chamber from the air inlet 301, and all output ports 304 are connected to this buffer chamber before flowing out onto the substrate 40 through the output ports 304. Alternatively, in other embodiments, the specific structure of the fluid distribution structure is not limited, as long as the above-mentioned effects can be achieved.
[0073] The above is only one specific implementation of this application, and any other improvements made based on the concept of this application shall be considered within the scope of protection of this application.
Claims
1. A substrate supercritical processing apparatus, characterized in that, include: A housing that provides a processing space for processing substrates, the housing having a supply port and a discharge port; A support structure for supporting the substrate in the processing space; as well as A fluid distribution structure, connected to the supply port, is used to deliver supercritical fluid to process the substrate. The fluid distribution structure has a plurality of output ports facing the substrate. The fluid distribution structure has a lower surface, and the plurality of output ports are located on the lower surface. The supercritical fluid flows out from the plurality of output ports. Among them, the output ports can be divided into multiple groups of output ports. Each group of output ports extends from the center of the fluid distribution structure to the surrounding area in a spiral arrangement. The supercritical fluid flowing out of the multiple groups of output ports can generate a spiral flow field that diffuses from the center of the fluid distribution structure to the surrounding area. The fluid distribution structure also includes a plurality of input ports connected to the supply port, and the input ports and the output ports are connected one-to-one to form a plurality of conveying channels; The conveying channel is obliquely cylindrical and is constructed as follows: a first plane parallel to the lower surface is used as a reference plane, and a first endpoint, a second endpoint, and a third endpoint are defined on the reference plane, wherein the third endpoint is the intersection of the central axis of the fluid distribution structure and the reference plane; the conveying channel is constructed with the orthographic projection of the second endpoint onto the plane where the lower surface is located and the line connecting the first endpoint as the path and the preset shape as the outline; in each set of output ports, in the conveying channels corresponding to any two adjacent output ports, the first endpoint of one conveying channel is located on the extension line of the line connecting the first endpoint and the second endpoint of the other conveying channel.
2. The substrate supercritical processing apparatus as described in claim 1, characterized in that, The distance between the first endpoint and the third endpoint is less than the distance between the second endpoint and the third endpoint; The ratio of the distance between the first endpoint and the second endpoint to the distance between the reference surface and the lower surface is less than or equal to a first preset value.
3. The substrate supercritical processing apparatus as described in claim 2, characterized in that, The first preset value is less than tan30°.
4. The substrate supercritical processing apparatus as described in claim 1, characterized in that, Multiple output ports are arranged in an array with the central axis of the fluid distribution structure as the array axis.
5. The substrate supercritical processing apparatus as described in claim 1, characterized in that, The processing device includes an air inlet connected to the output port; Using the lower surface of the fluid distribution structure as a projection plane, the processing device includes a buffer cavity that connects the air inlet and several input ports, and the orthographic projection of the buffer cavity onto the projection plane covers several of the output ports.
6. The substrate supercritical processing apparatus as described in claim 1, characterized in that, The processing device includes an air inlet connected to the output port; The processing device includes several guide pipes connecting the air inlet and several inlets.
7. The substrate supercritical processing apparatus as described in claim 1, characterized in that, The preset shape is a circle with a diameter ranging from 0.1 to 0.5 mm.