Photomask and exposure device

Abstract

The present invention discloses a photomask and exposure device. The photomask substrate includes a photomask region and a marking region that at least partially surrounds the photomask region. The photomask region is provided with a plurality of mask light sources arranged in an array, which are used to provide a mask beam. The marking region is provided with at least two marking light sources, which are used to provide a marking beam. The wavelength of the mask beam is different from that of the marking beam. The technical solution of the present invention can improve the alignment accuracy of the photomask, thereby improving the accuracy and reliability of the mask.

Description

Technical Field

[0001] The present invention relates to the field of mask technology, and in particular to a photomask and an exposure device. Background Art

[0002] Semiconductor photolithography masks are one of the tools used in the semiconductor chip fabrication process. Semiconductor chip structures can be created using image masks. Photolithography masks are high-precision image transfer tools. The structures created using photolithography masks serve as the connection between structural layers within the chip.

[0003] Currently, when using a photolithography mask to pattern a film layer, the relative position of the photomask and the sample to be masked must be indirectly determined using an alignment plate. Specifically, the position of the photomask relative to the alignment plate, as well as the position of the sample to be masked relative to the alignment plate, is first determined. The positional relationship between the photomask and the sample to be masked is then indirectly determined, and the position of the photomask is then adjusted to align the photomask with the substrate. However, in this process, there may be a certain amount of deviation when determining the positional relationship between the photomask and the alignment plate, as well as when determining the positional relationship between the sample to be masked and the alignment plate. This results in a relatively large deviation in the indirect determination of the positional relationship between the photomask and the sample to be masked, resulting in low alignment accuracy between the photomask and the sample to be masked. Summary of the Invention

[0004] The present invention provides a photomask and an exposure device to improve the alignment accuracy of the photomask, thereby improving the accuracy and reliability of the mask.

[0005] In a first aspect, the present invention provides a photomask, comprising:

[0006] a substrate comprising a photomask region and a marking region at least partially surrounding the photomask region;

[0007] The photomask area is provided with a plurality of mask light sources arranged in an array, and the mask light sources are used to provide a mask light beam;

[0008] The marking area is provided with at least two marking light sources, which are used to provide marking light beams;

[0009] The wavelength of the mask beam is different from the wavelength of the marking beam.

[0010] In a second aspect, the present invention provides an exposure device including the photomask provided by the present invention.

[0011] The technical solution provided by the present invention provides a photomask area and a marking area that at least partially surrounds the photomask area on the substrate of the photomask plate, so that a marking light beam provided by at least two marking light beams provided in the marking area is directly aligned with the sample to be masked, thereby reducing alignment errors and improving alignment accuracy. There is no need to additionally set up an alignment plate, which simplifies the alignment process and improves alignment efficiency. After the photomask plate is aligned with the sample to be masked, a mask light beam is provided by controlling a plurality of mask light sources arranged in an array in the photomask area to form a mask pattern in the area to be masked of the sample to be masked. In addition, by setting the wavelength of the mask light beam to be different from the wavelength of the marking light beam, it is avoided that the marking light beam emitted by the marking light beam is irradiated to the area to be masked of the sample to be masked when the sample to be masked is moved during the alignment process, thereby preventing an erroneous pattern from being prepared in the area to be masked of the sample to be masked, thereby improving the mask accuracy and reliability of the photomask plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A schematic diagram of a top view of a photomask provided by an embodiment of the present invention;

[0013] Figure 2 A schematic top view of another photomask provided by an embodiment of the present invention;

[0014] Figure 3 A schematic top view of another photomask provided by an embodiment of the present invention;

[0015] Figure 4 A schematic top view of another photomask provided by an embodiment of the present invention;

[0016] Figure 5 A schematic diagram of a top view of a photomask provided by an embodiment of the present invention;

[0017] Figure 6 A schematic top view of another photomask provided by an embodiment of the present invention;

[0018] Figure 7 A schematic top view of another photomask provided by an embodiment of the present invention;

[0019] Figure 8 A top view of another photomask provided by an embodiment of the present invention;

[0020] Figure 9 A top view of a photomask provided by an embodiment of the present invention;

[0021] Figure 10 A schematic cross-sectional structure diagram of a photomask provided by an embodiment of the present invention;

[0022] Figure 11A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention;

[0023] Figure 12 A top view of another photomask provided by an embodiment of the present invention;

[0024] Figure 13 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention;

[0025] Figure 14 A schematic diagram of a top view structure of a photomask region provided by an embodiment of the present invention;

[0026] Figure 15 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention;

[0027] Figure 16 A schematic cross-sectional structure diagram of another photomask provided by an embodiment of the present invention;

[0028] Figure 17 A schematic cross-sectional structure diagram of another photomask provided by an embodiment of the present invention;

[0029] Figure 18 A schematic diagram of a cross-sectional structure of a photomask region provided by an embodiment of the present invention;

[0030] Figure 19 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention;

[0031] Figure 20 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention;

[0032] Figure 21 A schematic structural diagram of a microlens provided in an embodiment of the present invention;

[0033] Figure 22 A schematic diagram of the cross-sectional structure of another photomask region provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0034] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all structures.

[0035] The existing photomask only includes a mask light source. Before the photomask is used to pattern the sample to be masked, the photomask is first fixed to one side of the carrier, the sample to be masked is placed on the carrier, and an alignment plate is set between the photomask and the sample to be masked, and the relative position relationship of the photomask with respect to the alignment plate and the relative position relationship of the sample to be masked with respect to the alignment plate are obtained, and then the position of the sample to be masked on the carrier is adjusted to align the sample to be masked with the photomask. For example, the position coordinates of the photomask relative to the alignment plate are (1,1), and the position coordinates of the sample to be masked relative to the alignment plate are (2,2). After normalization, the position coordinates of the photomask are (1,1). Marked as (0,0), the position coordinates of the sample to be masked are (1,1), and the position of the sample to be masked can be adjusted to the position of (0,0) so that the sample to be masked and the photomask can be aligned. The above-mentioned process of aligning the photomask and the sample to be masked requires the alignment plate to indirectly determine the relative position relationship between the photomask and the sample to be masked, and the alignment process is cumbersome; at the same time, there may be a certain amount of deviation when determining the position relationship between the photomask and the alignment plate, and there is also a certain amount of deviation when determining the position relationship between the sample to be masked and the alignment plate, which makes the indirect determination of the position deviation between the photomask and the sample to be masked large, resulting in low alignment accuracy between the photomask and the sample to be masked.

[0036] To solve the above problems, an embodiment of the present invention provides a photomask, which includes a substrate, the substrate including a photomask area and a marking area at least partially surrounding the photomask area; the photomask area is provided with a plurality of mask light sources arranged in an array, and the mask light sources are used to provide a mask beam; the marking area is provided with at least two marking light sources, and the marking light sources are used to provide a marking beam; the wavelength of the mask beam is different from the wavelength of the marking beam.

[0037] By adopting the above technical solution, a photomask area and a marking area at least partially surrounding the photomask area are set on the substrate of the photomask plate, so that the marking light beam provided by at least two marking light beams set in the marking area is directly aligned with the sample to be masked, thereby reducing the alignment error and improving the alignment accuracy. There is no need to additionally set up an alignment plate, simplifying the alignment process and improving the alignment efficiency. After the photomask plate is aligned with the sample to be masked, a mask light beam is provided by controlling a plurality of mask light sources arranged in an array in the photomask area to form a mask pattern in the area to be masked of the sample to be masked. In addition, by setting the wavelength of the mask light beam to be different from the wavelength of the marking light beam, it is avoided that the marking light beam emitted by the marking light beam is irradiated to the area to be masked of the sample to be masked when the sample to be masked is moved during the alignment process, thereby preventing an erroneous pattern from being prepared in the area to be masked of the sample to be masked, thereby improving the mask accuracy and reliability of the photomask plate.

[0038] The above is the core concept of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention. The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings.

[0039] Figure 1 A schematic diagram of a top view of a photomask provided in an embodiment of the present invention is shown in FIG. Figure 1 As shown, the photomask 100 includes a substrate 10, which includes a photomask area 11 and a marking area 12 at least partially surrounding the photomask area 11; the photomask area 11 is provided with a plurality of mask light sources 110 arranged in an array, and the mask light sources 110 are used to provide a mask beam; the marking area 12 is provided with at least two marking light sources 120, and the marking light sources 120 are used to provide a marking beam; the wavelength of the mask beam is different from the wavelength of the marking beam.

[0040] The substrate 10 includes a silicon-based substrate or a glass substrate, and the mask light source 110 and the marking light source 120 include light emitting diodes (LEDs) and other light emitting devices, which can be configured according to actual needs and are not specifically limited here.

[0041] Specifically, the photomask area 11 includes a plurality of mask light sources 110 arranged in an array to provide different mask beam patterns. When the mask beam provided by the photomask area 11 is irradiated onto the surface of the sample to be masked, the solubility and other properties of part of the photoresist located on the surface of the sample to be masked can be changed, so that the photoresist with changed or unchanged properties can be removed through a subsequent development process, so as to form a photolithography pattern at the position where the photoresist is removed or to form a photolithography pattern at the position where the photoresist is retained. The marking light source 120 of the marking area 12 can provide a marking beam, and the sample to be masked can be provided with a corresponding alignment light source to align the marking light source with the alignment light source while realizing the alignment of the photomask plate 100 and the sample to be masked. The process is simple, and there is no need to set up an additional alignment plate for indirect alignment. The photomask plate 100 is directly aligned with the sample to be masked, thereby reducing alignment errors and improving alignment accuracy and efficiency.

[0042] It should be noted that the above description is merely an example of the process of alignment using the marker light source 120. In other optional embodiments of the present invention, a corresponding marker light source receiving module may be provided in the sample to be masked. When each marker light source receiving module in the sample to be masked receives the marking beam emitted by the marker light source 120, it can be determined that the photomask 100 is aligned with the sample to be masked. When at least one marker light source receiving module in the sample to be masked does not receive the marking beam emitted by the marker light source 120, it can be determined that the photomask 100 is not aligned with the sample to be masked. The present invention does not specifically limit the process of alignment using the marker light source, provided that the core features of the present invention can be achieved.

[0043] In addition, the mask material, such as photoresist, located on the surface of the sample to be masked can absorb a mask beam with a wavelength within a preset range. When the mask beam with a wavelength within the preset range is irradiated onto the surface of the mask material, such as photoresist, the mask material can absorb the wavelength of the beam, thereby changing the solubility and other properties of the photoresist. During the process of aligning the sample to be masked with the photomask 100, the mask light source 110 of the photomask 100 does not provide a mask beam, while the marking light source 120 provides a marking beam. When the sample to be masked and the photomask 100 are misaligned, the position of the sample to be masked and / or the photomask 100 needs to be moved to align the sample to be masked with the photomask 100. During the process of moving the sample to be masked, the marking light source 120 provides a marking beam that will irradiate the mask area of ​​the sample to be masked. If the wavelength of the marking beam is the same as the wavelength of the mask beam that can change the properties of the mask material, an incorrect pattern shape will be formed in the mask area of ​​the sample to be masked. Therefore, the embodiment of the present invention sets the wavelength of the mask beam to be different from the wavelength of the marking beam, which can prevent erroneous patterning of the mask area of ​​the mask sample during the alignment process and improve the mask accuracy and reliability of the photomask.

[0044] It should be noted that Figure 1 In the example, only the mark area 12 surrounding the photomask area 11 is used for explanation. Figure 2 A schematic diagram of a top view of another photomask provided in an embodiment of the present invention is shown in FIG. Figure 2 As shown, marking area 120 can also partially surround photomask area 11. By placing marking area 120 in an area at least partially surrounding photomask area 11, the overall size of photomask 100 can be reduced, the area of ​​photomask area 11 can be increased, and the mask area of ​​photomask 100 can be increased. Assuming that marking area 12 at least partially surrounds the photomask area, the position of marking area 12 can be set according to actual needs and is not specifically limited here. For ease of description, the following description uses the example of marking area 12 completely surrounding photomask area 11.

[0045] The technical solution provided by the present invention provides a photomask area and a marking area that at least partially surrounds the photomask area on the substrate of the photomask plate, so that a marking beam provided by at least two marking beams provided in the marking area is directly aligned with the sample to be masked, thereby reducing alignment errors and improving alignment accuracy. There is no need to additionally set up an alignment plate, which simplifies the alignment process and improves alignment efficiency. After the photomask plate is aligned with the sample to be masked, a mask beam is provided by controlling a plurality of mask light sources arranged in an array in the photomask area to form a mask pattern in the area to be masked of the sample to be masked. In addition, by setting the wavelength of the mask beam to be different from the wavelength of the marking beam, it is avoided that the marking beam emitted by the marking beam is irradiated to the area to be masked of the sample to be masked when the sample to be masked is moved during the alignment process, thereby preventing an erroneous pattern from being prepared in the area to be masked of the sample to be masked, thereby improving the mask accuracy and reliability of the photomask plate.

[0046] Optional, Figure 3 A schematic top view of another photomask provided in an embodiment of the present invention is shown. Figure 4 A schematic top view of another photomask provided in an embodiment of the present invention is shown. Figure 5 A schematic diagram of a top view of a photomask provided by an embodiment of the present invention, referring to Figure 1-Figure 5 At least part of the marking light sources 120 are symmetrically arranged on two opposite sides of the photomask area 11 .

[0047] Specifically, if the marking light source 120 is positioned on one side of the photomask area 11, then after the marking light source 120 aligns the sample to be masked with the photomask 100, only one side of the photomask area 11 can be aligned with one side of the sample to be masked. There may be a displacement deviation between the other sides of the photomask area 11 and the sample to be masked. Therefore, the present invention positions some marking light sources 120 on opposite sides of the photomask area 11 to align the sample to be masked with the photomask 100 from both sides of the photomask area 11, thereby improving the alignment accuracy between the photomask 100 and the sample to be masked. The marking light sources 120 located on opposite sides of the photomask area 11 can be arranged symmetrically so that the sample to be masked and the photomask can be aligned by both marking light sources 120 in the direction of the connecting line of the two marking light sources 120, further improving alignment accuracy.

[0048] The photomask region 11 of the photomask 100 may be a symmetrical structure or an asymmetrical structure. When the photomask region 11 is a symmetrical structure, the photomask region 11 includes multiple symmetry axes, and the number of symmetry axes is related to the shape of the photomask region 11. For example, if the shape of the photomask region 11 is a square, the photomask region 11 includes a first symmetry axis J1, a second symmetry axis J2, a third symmetry axis J3, and a fourth symmetry axis J4. At least part of the marking light sources 120 are symmetrically arranged on opposite sides of the photomask region 11, including Figure 1The partial marking light sources 120 shown in FIG are symmetrically arranged on both sides of the second symmetry axis J2, or, Figure 3 The partial marking light sources 120 shown in FIG are symmetrically arranged on both sides of the first symmetry axis J1, or, Figure 4 The partial marking light sources 120 shown in FIG are symmetrically arranged on both sides of the fourth symmetry axis J4, or, Figure 5 The partial marking light sources 120 shown in FIG are symmetrically arranged on both sides of the third symmetry axis J3 and can be arranged according to actual needs, which is not specifically limited here.

[0049] It should be noted that, under the premise that some marking light sources 120 are symmetrically arranged on both sides of a certain symmetry axis, the positions of the marking light sources 120 on both sides of the symmetry axis can be set according to actual needs. For example, the following example is taken as an example in which some marking light sources 120 are located on both sides of the second symmetry axis J2. Figure 1 The partial marking light source 120 is coaxially arranged with the first symmetry axis J1, Figure 2 The partial marking light source 120 is located in a side area of ​​the first symmetry axis J1. The specific position of the partial marking light source can be set according to actual needs and is not specifically limited here.

[0050] It can be understood that, on the basis of setting at least two marking light sources 120 in the marking area 12, the more marking light sources 120 there are, the higher the alignment accuracy of the photomask 100 and the sample to be masked. The specific number of marking light sources 120 in the marking area 12 can be determined according to parameters such as the size of the substrate 10. For example, when the size of the substrate 10 is small or the size unit of the substrate 10 is at the centimeter level, on the basis of including at least two marking light sources 120 in the marking area 12, the photomask 100 and the sample to be masked do not need to be set with an excessive number of marking light sources 120 in the marking area 12 of the substrate 10. An appropriate number of marking light sources 120 can be set according to actual needs to improve the utilization rate of the marking light sources 120. When the size of the substrate 10 is large or the size unit of the substrate 10 is at the meter level, only two marking light sources 120 are set in the marking area 12. Due to the large size of the substrate 10, setting a smaller number of marking light sources 120 may cause the alignment accuracy of the sample to be masked and the photomask 100 to be reduced. Therefore, when the size of the substrate 10 is large or the size unit of the substrate 10 is at the meter level, at least three marking light sources 120 can be set in the marking area 12 to improve the alignment accuracy of the photomask 100 and the sample to be masked. Figure 6 A schematic diagram of a top view of another photomask provided in an embodiment of the present invention is shown in FIG. Figure 6As shown, when only three marking light sources 120 are provided in the marking area 12, two of the marking light sources 120 can be symmetrically arranged on opposite sides of the photomask area 11, and the other marking light source 120 can be coaxially arranged with the axis of symmetry of the two symmetrically arranged marking light sources 120, or coaxially arranged with another axis of symmetry of the photomask area 11. In this way, during the alignment of the sample to be masked with the photomask 100, the sample to be masked and the photomask can be aligned along the directions of at least two axes of symmetry of the photomask area 11, thereby improving the alignment accuracy between the photomask 100 and the sample to be masked. Furthermore, the other marking light source can be provided at other locations in the marking area 12 according to actual needs and is not specifically limited here.

[0051] Optional, Figure 7 A schematic diagram of a top view of another photomask provided in an embodiment of the present invention is shown in FIG. Figure 7 As shown, the marking light sources 120 are evenly arranged around the photomask area 11 .

[0052] Specifically, multiple marking light sources 12 are evenly spaced around the photomask area 11 at predetermined intervals to achieve alignment of the sample to be masked with the photomask 100 from all sides and directions of the photomask area 11, further improving the alignment accuracy between the sample to be masked and the photomask 100. The predetermined interval can be set based on actual needs. For example, the predetermined interval is 0.5 times the length of the shorter edge of the photomask area 11, but other values ​​are possible and are not specifically limited here.

[0053] Optional, Figure 8 A top view of another photomask provided in an embodiment of the present invention is shown. Figure 9 A top view of a photomask provided by an embodiment of the present invention is shown in FIG. Figure 8 and Figure 9 The mask light source 110 includes at least one mask light-emitting element 113, and the mark light source 120 includes at least one mark light-emitting element 123. The emission wavelength of the mask light-emitting element 113 is different from the emission wavelength of the mark light-emitting element 123. The mask light-emitting element 113 and the mark light-emitting element 123 may include light-emitting devices such as light-emitting diodes, and may be configured according to actual needs, and are not specifically limited here.

[0054] Specifically, the light emission wavelength of the mask light emitting element 113 and the light emission wavelength of the marking light emitting element 123 are related to the absorption wavelength of light by the photosensitive material coated on the surface of the to-be-masked area of ​​the sample to be masked. For example, the photosensitive material can absorb light beams with a wavelength below 436 nm, and the light emission wavelength of the mask light emitting element 113 can be set below 436 nm so that the light beam emitted by the mask light emitting element 113 can be absorbed by the photosensitive material. The color of the mask light beam can include blue, etc. The light emission wavelength of the marking light emitting element 123 is above 436 nm, and the color of the marking light beam can include red, etc., so as to prevent the marking light beam of the marking light emitting element 123 from being absorbed by the photosensitive material, resulting in the preparation of an erroneous pattern after subsequent development, thereby improving the mask accuracy and reliability of the photomask.

[0055] It should be noted that the number of mask light emitting elements 113 in the mask light source 110 may be the same as or different from the number of mark light emitting elements 123 in the mark light source 120. For example, Figure 8 As shown, the number of mask light emitting elements 113 in the mask light source 110 is different from the number of mark light emitting elements 123 in the mark light source 120. The mask light source 110 includes four mask light emitting elements 113, and the mark light source 120 includes one mark light emitting element 123; or Figure 9 As shown, the number of mask light-emitting elements 113 in the mask light source 110 is the same as the number of mark light-emitting elements 123 in the mark light source 120. The mask light source 110 includes four mask light-emitting elements 113, and the mark light source 120 includes four mark light-emitting elements 123. The mask light source 110 includes at least one mask light-emitting element 113, so that the mask light source 110 can emit a mask light beam, and the mark light source 120 includes at least one mark light-emitting element 123. On the basis that the mark light source 120 can emit a mark light beam, the number of mask light-emitting elements 113 in the mask light source 110 and the number of mark light-emitting elements 123 in the mark light source 120 can be set according to actual needs. For example, Figure 12 As shown, the mask light source 110 includes 9 mask light-emitting elements 113, and the mark light source 120 includes 9 mark light-emitting elements 123. Other types are also possible and are not specifically limited here.

[0056] Optional, Figure 10 A schematic cross-sectional structure diagram of a photomask provided by an embodiment of the present invention, referring to Figure 8 and Figure 10The mask light source 110 includes at least one mask light-emitting element 113, and the mark light source 120 includes at least one mark light-emitting element 123 and a color conversion layer 124; the color conversion layer 124 is located on the side of the mark light-emitting element 123 away from the substrate 10; wherein the light-emitting wavelength of the mask light-emitting element 113 is the same as the light-emitting wavelength of the mark light-emitting element 123.

[0057] Specifically, the light emission wavelength of the mask light emitting element 113 is related to the light absorption wavelength of the photosensitive material coated on the surface of the to-be-masked area of ​​the sample to be masked. For example, the photosensitive material can absorb light beams with a wavelength below 436 nm, and the light emission wavelength of the mask light emitting element 113 can be set below 436 nm. The light emission wavelength of the mark light emitting element 123 is the same as the light emission wavelength of the mask light emitting element 113, that is, the light emission wavelengths of the mark light emitting element 123 and the mask light emitting element 113 are both set below 436 nm. If the color conversion layer 124 is not provided on the side of the marking light-emitting element 123 facing away from the substrate 10, the marking light beam emitted by the marking light-emitting element 123 may be emitted to the mask area of ​​the sample to be masked during the alignment between the sample to be masked and the photomask 100, resulting in erroneous patterning. Therefore, it is necessary to provide a color conversion layer 124 on the side of the marking light-emitting element 123 facing away from the substrate 10. The color conversion layer 124 includes materials such as a quantum dot (QD) color conversion structure. The color conversion layer 124 can absorb the light beam of the wavelength emitted by the marking light-emitting element 123. The absorbed light beam contacts and reacts with the quantum dot particles in the color conversion layer 124 and then emits marking light beams of other wavelengths. The marking light beams of other wavelengths will not be absorbed by the photosensitive material on the surface of the sample to be masked, thereby avoiding the preparation of an erroneous pattern on the surface of the sample to be masked after the subsequent development step, thereby improving the mask accuracy and reliability of the photomask.

[0058] Exemplarily, the photosensitive material can absorb light beams with a wavelength below 436nm. The light emission wavelengths of the mask light emitting element 113 and the marking light emitting element 123 are both 365nm-436nm. The color conversion layer 124 can convert light beams with a wavelength below 436nm into marking light beams with a wavelength above 436nm. The wavelength of the marking light beam can be between 436nm-1000nm, or other wavelengths, which are not specifically limited here.

[0059] Optional, Figure 11 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention, such as Figure 11As shown, the mask light source 110 includes a first mask light source 111 and a second mask light source 112; the first mask light source 111 includes at least one first mask light-emitting element 1131; the second mask light source 112 includes at least one second mask light-emitting element 1132; the vertical distance between the side surface of the first mask light-emitting element 1131 close to the substrate 10 and the side surface of the substrate 10 away from the first mask light-emitting element 1131 is a first distance h1; the vertical distance between the side surface of the second mask light-emitting element 1132 close to the substrate 10 and the side surface of the substrate 10 away from the second mask light-emitting element 1132 is a second distance h2; the first distance h1 is smaller than the second distance h2; in the direction Y perpendicular to the plane of the substrate 10, at least part of the first mask light-emitting element 1131 and the second mask light-emitting element 1132 do not overlap.

[0060] The first mask light emitting element 1131 and the second mask light emitting element 1132 may include light emitting devices such as light emitting diodes, and may be configured according to actual needs, which is not specifically limited here.

[0061] Specifically, the vertical distance between the side surface of the first mask light-emitting element 1131 close to the substrate 10 and the side surface of the substrate 10 away from the first mask light-emitting element 1131 is a first distance h1, and the vertical distance between the side surface of the second mask light-emitting element 1132 close to the substrate 10 and the side surface of the substrate 10 away from the second mask light-emitting element 1132 is a second distance h2. If the first distance h1 is equal to the second distance h2, then due to the limitation of the preparation process, there will be a certain gap between the first mask light-emitting element 1131 and the second mask light-emitting element 1132 along the first direction X, and no light-emitting element is set in the gap. The light beams emitted by the first mask light-emitting element 1131 and the second mask light-emitting element 1132 will be scattered during the propagation process, so that the surface of the sample to be masked corresponding to the gap can receive the mask light beam, but the area of ​​the sample to be masked corresponding to the gap receives the mask light beam. The intensity of the film light beam is weak, and the degree of change in the solubility of the photosensitive material in the area is small, resulting in a mask pattern formed on the surface of the sample to be masked after the subsequent development step being different from the set pattern. Therefore, by setting the first distance h1 to be smaller than the second distance h2, the first mask light source 111 and the second mask light source 112 are set in film layers at different heights to avoid the problem that the first mask light source 111 and the second mask light source 112 are set adjacent to each other, resulting in a gap between adjacent surfaces and causing an abnormal mask pattern formed by the exposure of the photomask area 11. In the direction Y perpendicular to the plane of the substrate 10, at least part of the first mask light-emitting element 1131 and the second mask light-emitting element 1132 do not overlap, and the second mask light source 112 can make up for the gap between the two adjacent first mask light sources 111, so that the photomask area 11 can achieve seamless illumination, thereby improving the mask accuracy and reliability of the photomask 100.

[0062] It is understandable that Figure 11 Only the first mask light source 111 includes one first mask light emitting element 1131, and the second mask light source 112 includes one second mask light emitting element 1132. In the embodiment of the present invention, based on the fact that the number of the first mask light emitting elements 1131 in the first mask light source 111 is greater than or equal to 1, the number of the first mask light emitting elements 1131 in the first mask light source 111 can be set according to actual needs. Figure 12 A top view of another photomask provided by an embodiment of the present invention. Figure 13 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention, referring to Figure 12 and Figure 13 The first masked light source 111 includes nine first masked light-emitting elements 1131, and the second masked light source 112 includes nine second masked light-emitting elements 1132. In a direction Y perpendicular to the plane of the substrate 10, the first masked light source 111 and the second masked light source 112 do not overlap. The number of first masked light-emitting elements 1131 in the first masked light source 111 and the number of second masked light-emitting elements 1132 in the second masked light source 112 can be the same or different, and can be set according to actual needs, and is not specifically limited here.

[0063] It should be noted that Figure 11 The technical solution in which the first mask light-emitting element 1131 and the second mask light-emitting element 1132 do not overlap in the direction Y perpendicular to the plane of the substrate 10 is shown. In the direction Y perpendicular to the plane of the substrate 10, a technical solution in which part of the first mask light-emitting element 1131 and the second mask light-emitting element 1132 do not overlap and part of the first mask light-emitting element 1131 and the second mask light-emitting element 1132 overlap is also included. By way of example, the first mask light source 111 includes one first mask light-emitting element 1131 and the second mask light source 112 includes one second mask light-emitting element 1132. Figure 14 A schematic diagram of a top view structure of a photomask region provided by an embodiment of the present invention, Figure 15 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention, referring to Figure 14 and Figure 15In the direction Y perpendicular to the plane of the substrate 10, part of the first mask light-emitting elements 1131 may not overlap with the second mask light-emitting elements 1132, and part of the first mask light-emitting elements 1131 may overlap with the second mask light-emitting elements 1132. The part of the second mask light-emitting elements 1132 that overlaps with the first mask light-emitting elements 1131 can not only make up for the gap between the first mask light-emitting elements 1131 and the second mask light-emitting elements 1132 along the first direction X, so that the photomask area 11 can achieve seamless lighting, but also improve the reliability of the mask light beam emitted in this area, thereby improving the mask reliability of the photomask 100.

[0064] Optional, reference Figure 11 The photomask 100 also includes a light source defining layer 20, which includes a plurality of openings 21 and a shielding portion 22 surrounding each opening 21; the first mask light-emitting element 1131 is located in the opening 21; and the second mask light-emitting element 1132 is located on the side of the shielding portion 22 facing away from the substrate 10.

[0065] The material of the shielding portion 22 includes polyimide, acrylic resin, epoxy resin and the like, and can be set according to actual needs, and is not specifically limited here.

[0066] Specifically, the preparation method of the photomask 100 is as follows: a substrate 10 is provided, and a light source defining layer 22 including a whole layer of organic material or inorganic material is prepared on the surface of one side of the substrate 10, and a plurality of openings 21 are prepared in the light source defining layer 22 by using processes such as laser etching. The unetched portion is a shielding portion 22, and the shielding portion 22 is arranged around the opening 21. Then, a first mask light-emitting element 1131 is prepared in the opening 21, and a second mask light-emitting element 1132 is prepared on the side of the shielding portion 22 away from the substrate 10 to form the photomask 100. In this way, the first mask light-emitting element 1131 and the second mask light-emitting element 1132 are both arranged on one side of the same substrate 10 to improve the preparation efficiency of the photomask 100.

[0067] Optional, reference Figure 11 、 Figure 13-15 Along the first direction X, the size of the second mask light emitting element 1132 is d2, and the size of the blocking portion 22 located between two adjacent openings 21 is d1; the first direction X is parallel to the plane where the substrate 10 is located; wherein d2≥d1.

[0068] The directions parallel to the plane where the substrate 10 is located include first directions X1 and X2. Direction X1 or direction X2 can be set as the first direction X according to actual needs. For ease of description, this embodiment takes direction X1 as the first direction X as an example.

[0069] Specifically, along the first direction X, if the size d2 of the second mask light-emitting element 1132 is smaller than the size d1 of the shielding portion 22 between two adjacent opening portions 21, the area of ​​the shielding portion 22 not covered by the second mask light-emitting element will not be able to emit the mask light beam, thereby causing the pattern of the mask area 11 on the surface of the sample to be masked to be inaccurate. Therefore, in order to enable each position of the photomask area 11 to emit a mask light beam with uniform intensity, the size d2 of the second mask light-emitting element 1132 is set to be greater than or equal to the size d1 of the shielding portion 22 between two adjacent opening portions 21, so that the second mask light-emitting element 1132 at least covers the shielding portion 22, thereby enabling the photomask area 11 to achieve seamless light emission, thereby improving the mask accuracy and reliability of the photomask plate 100.

[0070] Optional, Figure 16 A schematic cross-sectional structure diagram of another photomask provided by an embodiment of the present invention is shown in FIG. Figure 16 As shown, the photomask 100 also includes a first light-emitting layer 31 located on one side of the substrate 10; the first light-emitting layer 31 includes at least a light-emitting layer of a first mask light-emitting element 1131; the light-emitting layer of the first mask light-emitting element 1131 is located in the opening 21; a second light-emitting layer 32 is located on the side of the first light-emitting layer 31 and the light source defining layer 20 away from the substrate 10; the second light-emitting layer 32 includes at least a light-emitting layer of the second mask light-emitting element 1132.

[0071] The marking light source 120 includes a marking light-emitting element 123 , and the first light-emitting layer 31 also includes a light-emitting layer of the marking light-emitting element 123 .

[0072] Specifically, the first mask light-emitting element 1131 further includes an anode structure and a cathode structure located on either side of the first light-emitting layer 31. When an electrical signal is supplied to the anode and cathode, carriers in the anode and cathode structures recombine and emit light in the first light-emitting layer 31, thereby emitting a mask beam. Correspondingly, the second mask light-emitting element 1132 further includes an anode structure and a cathode structure located on either side of the second light-emitting layer 32. When an electrical signal is supplied to the anode and cathode, carriers in the anode and cathode structures recombine and emit light in the second light-emitting layer 32, thereby emitting a mask beam. The marking light source 120 needs to emit a marking beam, so the marking light-emitting element 123 in the marking light source 120 also includes a light-emitting layer. This allows the first light-emitting layer 31 to include the light-emitting layer of the marking light-emitting element 123, thereby reducing the number of light-emitting layers required. Furthermore, the marking light-emitting element 123 can be manufactured simultaneously with the first mask light-emitting element 1131, improving manufacturing efficiency.

[0073] It is understandable that the above description is only made by taking the first light-emitting layer 31 including the light-emitting layer of the marking light-emitting element 123 as an example. Figure 17 A schematic cross-sectional structure diagram of another photomask provided in an embodiment of the present invention is shown in FIG. Figure 17 As shown, the second light-emitting layer 32 includes a light-emitting layer of the mark light-emitting element 123 to reduce the number of light-emitting layers provided, and the mark light-emitting element 123 can be prepared while preparing the second mask light-emitting element 1132, thereby improving preparation efficiency.

[0074] Optional, Figure 18 A schematic diagram of a cross-sectional structure of a photomask region provided by an embodiment of the present invention, such as Figure 18 As shown, the photomask area 11 includes a plurality of first light source bonding areas 41 and a plurality of second light source bonding areas 42 arranged alternately; the first light source bonding area 41 is provided with a first bonding terminal group 411, and the second light source bonding area 42 is provided with a second bonding terminal group 421; the vertical distance between the side surface of the first bonding terminal group 411 facing away from the substrate 10 and the substrate 10 is a first distance h1; the vertical distance between the side surface of the second bonding terminal group 421 facing away from the substrate 10 and the substrate 10 is a second distance h2; the first mask light source 111 is bonded to the first light source bonding area 41 through the first bonding terminal group 411, and the second mask light source 112 is bonded to the second light source bonding area 42 through the second bonding terminal group 421.

[0075] The first bonding terminal group 411 and the second bonding terminal group 421 may include anode electrical signal transmission terminals and cathode electrical signal transmission terminals, etc., which can be configured according to actual needs and are not specifically limited here.

[0076] Specifically, the anode electrical signal transmission terminal is used to transmit the anode electrical signal, and the cathode electrical signal transmission terminal is used to transmit the cathode electrical signal. An anode electrical signal transmission terminal and an anode electrical signal transmission terminal constitute a pair of bonding terminals. The first bonding terminal group 411 may include a pair of bonding terminals or multiple pairs of bonding terminals, which can be set according to the number of the first mask light-emitting elements 1131 in the first mask light source 111. For example, the first mask light source 111 includes one first mask light-emitting element 1131, and the first bonding terminal group 411 includes a pair of bonding terminals. When the first mask light source 111 includes 9 first mask light-emitting elements 1131, the first bonding terminal group 411 includes 9 pairs of bonding terminals, so that when the first mask light source 111 is bonded in the first light source bonding area 41 through the first bonding terminal group 411, each first mask light-emitting element 1131 in the first mask light source 111 can receive the anode electrical signal and the cathode electrical signal, so that each first mask light-emitting element 1131 in the first mask light source 111 can emit a mask light beam, thereby improving the reliability of the mask light beam emitted by the first mask light source 111.

[0077] Correspondingly, the second bonding terminal group 421 may include a pair of bonding terminals or multiple pairs of bonding terminals, which can be set according to the number of first mask light-emitting elements 1131 in the first mask light source 111. The second mask light source 112 includes n second mask light-emitting elements 1132, and the second bonding terminal group 421 includes n pairs of bonding terminals, so that when the second mask light source 112 is bonded to the second light source bonding area 42 through the second bonding terminal group 421, each second mask light-emitting element 1132 in the second mask light source 112 can receive the anode electrical signal and the cathode electrical signal, so that each second mask light-emitting element 1132 in the second mask light source 112 can emit a mask light beam, thereby improving the reliability of the second mask light source 112 emitting a mask light beam.

[0078] It is understood that a mass transfer method can be used to bond the first mask light source 111 to the first light source bonding area 41, and each second mask light source 112 to the second light source bonding area 42. If a mask light source bonded to a light source bonding area fails, the mask light source can be removed from that bonding area and a properly functioning mask light source can be re-bonded to that light source bonding area. This improves the manufacturing yield of the mask light sources in the photomask area 11 and facilitates later maintenance of the mask light sources in the photomask area 11. Alternatively, a monolithic integration method can be used to bond the first mask light source 111 to the first light source bonding area 41, and each second mask light source 112 to the second light source bonding area 42. The bonding method can be configured according to actual needs and is not specifically limited here.

[0079] Optional, Figure 19 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention, such as Figure 19 As shown, the photomask region 11 further includes a focusing structure 5 , which is located on a side of the mask light source 110 facing away from the substrate 10 .

[0080] The focusing structure 5 includes a microlens, etc., and can be configured according to actual needs, which is not specifically limited here.

[0081] Specifically, the first distance d1 between the first mask light emitting element 111 and the substrate 10 and the second distance d2 between the second mask light emitting element 112 and the substrate 10 in the mask light source 110 are different from each other. Since light will attenuate to varying degrees during transmission, the focal plane of the mask light beam emitted by the first mask light emitting element 111 and the focal plane of the mask light beam emitted by the second mask light emitting element 112 are different. In order to reduce the influence of the focal plane difference on the accuracy of the mask pattern, the mask light source 110 is away from the substrate 10. A focusing structure 5 is provided on one side of 0 so that the mask light beams emitted by the first mask light emitting element 111 and the second mask light emitting element 112 have the same focal plane, so that the sample to be masked can be placed on the focal plane. When the sample to be masked is patterned by the photomask 10, the light focusing amount of the mask light beam emitted by each mask light source 110 to the surface of the sample to be masked can be increased, and the light emitting states of each first mask light emitting element 111 and each second mask light emitting element 112 can be finely adjusted to enable the photomask 10 to achieve a high-resolution mask pattern.

[0082] Optional, Figure 20 A schematic cross-sectional structure diagram of another photomask region provided by an embodiment of the present invention, Figure 21 A schematic diagram of the structure of a micro lens provided by an embodiment of the present invention, referring to Figure 20 and Figure 21 The focusing structure 5 includes a microlens array 50; the microlens array 50 includes a first microlens 51 and a second microlens 52; in a direction perpendicular to the plane of the substrate 10, the first microlens 51 covers the first mask light-emitting element 1131, and the second microlens 52 covers the second mask light-emitting element 1132; the ratio of the arch height H to the width D of the first microlens 51 is m1, and the ratio of the arch height H to the width D of the second microlens 52 is m2; m1>m2.

[0083] The first microlens 51 and the second microlens 52 can be spherical lenses, aspherical lenses, cylindrical lenses or prisms, etc., and can be set according to actual needs. Figure 21 Only the structure of the microlens being a spherical mirror is shown in the figure, and it can also be other structures, which are not specifically limited here.

[0084] Specifically, the focal length of the microlens is proportional to the ratio of the arch height to the width. The larger the ratio of the arch height to the width, the larger the focal length of the microlens. After the photomask 10 is aligned with the sample to be masked, since the distance between the first microlens 51 and the surface of the sample to be masked is greater than the distance between the second microlens 52 and the surface of the sample to be masked, the ratio m1 of the arch height H to the width D of the first microlens 51 covering the first mask light-emitting element 1131 is set to be greater than the ratio m2 of the arch height H to the width D of the second microlens 52 covering the second mask light-emitting element 1132, so that the focal plane of the light beam emitted from the first mask light-emitting element 1131 to the first microlens 51 and the focal plane of the light beam emitted from the second mask light-emitting element 1132 to the second microlens 52 are located on the same plane, so that the intensity of the light beam irradiated to each mask area on the surface of the sample to be masked is consistent, thereby improving the uniformity of the mask light beam emitted from the photomask area 11, and thereby improving the reliability of the mask pattern of the photomask 100.

[0085] Optional, Figure 22 A schematic diagram of a cross-sectional structure of another photomask region provided by an embodiment of the present invention is shown in FIG. Figure 22 As shown, the focusing structure 5 includes a liquid crystal layer 53, and the liquid crystal layer 53 includes a first liquid crystal region 531 and a second liquid crystal region 532; the refractive index of the first liquid crystal region 531 is different from that of the second liquid crystal region 532; in a direction perpendicular to the plane of the substrate 10, the first liquid crystal region 531 covers the first mask light-emitting element 1131, and the second liquid crystal region 532 covers the second mask light-emitting element 1132.

[0086] The refractive index of the liquid crystal layer 52 refers to the degree of influence of the liquid crystal molecules on the propagation direction of light. Since the liquid crystal molecules in the liquid crystal layer 52 have orientation, they will affect the refraction of light.

[0087] Specifically, after the photomask 10 is aligned with the sample to be masked, since the distance between the first microlens 51 and the surface of the sample to be masked is greater than the distance between the second microlens 52 and the surface of the sample to be masked, the focal plane of the mask light beam emitted by the first microlens 51 and the focal plane of the mask light beam emitted by the second microlens 52 are no longer in the same plane. Therefore, by providing a first liquid crystal region 531 covering the first mask light emitting element 1131 and a second liquid crystal region 532 covering the second mask light emitting element 1132, the first liquid crystal region 531 and the second liquid crystal region 532 have Different refractive indices are used to adjust the deflection direction of the light beam emitted from the first mask light emitting element 1131 and the second mask light emitting element 1132 to the surface of the sample to be masked, so that the focal plane of the light beam emitted from the first mask light emitting element 1131 to the first microlens 51 and the focal plane of the light beam emitted from the second mask light emitting element 1132 to the second microlens 52 are located on the same plane, so that the intensity of the light beam irradiated to each mask area on the surface of the sample to be masked is consistent, thereby improving the uniformity of the mask light beam emitted from the photomask area 11, and thereby improving the reliability of the mask pattern of the photomask 100.

[0088] Based on the same inventive concept, embodiments of the present invention provide an exposure device, comprising a photomask provided by any embodiment of the present invention. Therefore, the exposure device possesses the technical features of the photomask provided by the embodiments of the present invention and can achieve the beneficial effects of the photomask provided by the embodiments of the present invention. Similarities can be found in the above description of the photomask provided by the embodiments of the present invention and will not be repeated here.

[0089] Note that the above are only preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, combinations, and substitutions are possible for those skilled in the art without departing from the scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments and may include many other equivalent embodiments without departing from the scope of the present invention. The scope of the present invention is determined by the scope of the appended claims.

Claims

1. A photomask, characterized in that: include: a substrate comprising a photomask region and a marking region at least partially surrounding the photomask region; The photomask area is provided with a plurality of mask light sources arranged in an array, and the mask light sources are used to provide a mask light beam; The marking area is provided with at least two marking light sources, and the marking light sources are used to provide marking light beams; The wavelength of the mask beam is different from the wavelength of the marking beam.

2. The photomask according to claim 1, wherein: At least part of the marking light sources are symmetrically arranged on two opposite sides of the photomask area.

3. The photomask according to claim 1, wherein: The marking light sources are evenly arranged around the photomask area.

4. The photomask according to claim 1, wherein: The mask light source includes at least one mask light emitting element, and the mark light source includes at least one mark light emitting element; The light-emitting wavelength of the mask light-emitting element is different from the light-emitting wavelength of the mark light-emitting element.

5. The photomask according to claim 1, wherein: The mask light source includes at least one mask light emitting element; The marking light source includes at least one marking light-emitting element and a color conversion layer; the color conversion layer is located on a side of the marking light-emitting element away from the substrate; The light emitting wavelength of the mask light emitting element is the same as the light emitting wavelength of the mark light emitting element.

6. The photomask according to claim 1, wherein: The mask light source includes a first mask light source and a second mask light source; The first mask light source includes at least one first mask light emitting element; The second mask light source includes at least one second mask light emitting element; A vertical distance between a surface of the first mask light-emitting element close to the substrate and a surface of the substrate away from the first mask light-emitting element is a first distance; a vertical distance between a surface of the second mask light-emitting element close to the substrate and a surface of the substrate away from the second mask light-emitting element is a second distance; the first distance is smaller than the second distance; In a direction perpendicular to the plane of the substrate, at least a portion of the light-emitting elements of the first mask do not overlap with the light-emitting elements of the second mask.

7. The photomask according to claim 6, wherein: Also includes: a light source defining layer comprising a plurality of openings and a shielding portion surrounding each of the openings; The first mask light emitting element is located in the opening; The second mask light emitting element is located on a side of the shielding portion away from the substrate.

8. The photomask according to claim 7, wherein: Along the first direction, the size of the light-emitting element of the second mask is d2, and the size of the blocking portion located between two adjacent openings is d1; the first direction is parallel to the plane where the substrate is located; Among them, d2≥d1.

9. The photomask according to claim 7, wherein: Also includes: a first light-emitting layer located on one side of the substrate; the first light-emitting layer at least includes a light-emitting layer of the first mask light-emitting element; The light-emitting layer of the light-emitting element of the first mask is located in the opening; a second light-emitting layer located on a side of the first light-emitting layer and the light source defining layer away from the substrate; the second light-emitting layer at least includes a light-emitting layer of the second mask light-emitting element; Wherein, the marking light source includes a marking light-emitting element; the first light-emitting layer also includes the light-emitting layer of the marking light-emitting element, or the second light-emitting layer also includes the light-emitting layer of the marking light-emitting element.

10. The photomask according to claim 6, wherein: The photomask area includes a plurality of first light source bonding areas and a plurality of second light source bonding areas that are alternately arranged; The first light source bonding area is provided with a first bonding terminal group, and the second light source bonding area is provided with a second bonding terminal group; a vertical distance between a surface of the first bonding terminal group facing away from the substrate and the substrate is the first distance; a vertical distance between a surface of the second bonding terminal group facing away from the substrate and the substrate is the second distance; The first mask light source is bonded in the first light source bonding area through the first bonding terminal group, and the second mask light source is bonded in the second light source bonding area through the second bonding terminal group.

11. The photomask according to claim 6, wherein: The photomask region further includes: Focus on structure; The focusing structure is located on a side of the mask light source facing away from the substrate.

12. The photomask according to claim 11, wherein: The focusing structure includes a microlens array; the microlens array includes a first microlens and a second microlens; In a direction perpendicular to the plane of the substrate, the first microlens covers the first mask light-emitting element, and the second microlens covers the second mask light-emitting element; The ratio of the arch height to the width of the first microlens is m1, and the ratio of the arch height to the width of the second microlens is m2; m1>m2.

13. The photomask according to claim 11, wherein: The focusing structure includes a liquid crystal layer; the liquid crystal layer includes a first liquid crystal region and a second liquid crystal region; the first liquid crystal region and the second liquid crystal region have different refractive indices; In a direction perpendicular to the plane where the substrate is located, the first liquid crystal region covers the first mask light-emitting element, and the second liquid crystal region covers the second mask light-emitting element.

14. An exposure device, characterized in that: The photomask comprises the photomask according to any one of claims 1 to 13.

Images