Target grain determination method, device, electronic equipment and medium

Abstract

The present invention provides a method, device, electronic device and medium for determining a target grain, and relates to the field of semiconductor technology. The method comprises: obtaining a wafer set to be tested; sequentially performing qualification tests on multiple grains of each wafer, and generating an initial two-dimensional array corresponding to each wafer according to the test results of each grain; determining a fused two-dimensional array according to N initial two-dimensional arrays; traversing the fused two-dimensional array, and determining a first target element that meets a preset screening condition from multiple fused elements; determining multiple initial elements corresponding to the first target element as target initial elements, and determining grains corresponding to each target initial element as target grains. The present invention improves the recognition efficiency and recognition accuracy of target grains.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method, device, electronic equipment and medium for determining a target crystal grain. Background Art

[0002] In the prior art, the selection method for Low Power Double Data Rate (LPDDR) chips is to manually perform a series of tests on the incoming LPDDR wafers and then select qualified target alphadies from the incoming wafers based on the test results. Since there are too many alphadies in each wafer and the selection process of the target alphadies is relatively complicated, manual selection is time-consuming and prone to errors. Summary of the invention

[0003] In view of this, the purpose of the present invention is to overcome the deficiencies in the prior art and provide a method, device, electronic device and medium for determining a target grain, aiming to improve the recognition efficiency and recognition accuracy of the target grain. The present invention provides the following technical solutions:

[0004] In a first aspect, the present invention provides a method for determining a target grain, the method comprising:

[0005] Acquire a wafer set to be tested, wherein the wafer set to be tested includes N wafers, and each of the wafers includes a plurality of dies;

[0006] Performing qualification tests on the plurality of dies of each wafer in turn, and generating an initial two-dimensional array corresponding to each wafer according to the test results of each dies, wherein the initial two-dimensional array includes a plurality of initial elements, and each initial element represents the test result of the dies having the same number of rows and columns as the initial element;

[0007] Determine a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array includes a plurality of fused elements, each of which represents the sum of the values ​​of a plurality of initial elements having the same number of rows and columns as the initial elements;

[0008] Traversing the fused two-dimensional array, and determining a first target element that meets a preset screening condition from a plurality of fused elements;

[0009] The plurality of initial elements corresponding to the first target element are determined as target initial elements, and the grains corresponding to the respective target initial elements are determined as target grains.

[0010] In one embodiment, the sequentially performing qualification tests on the plurality of dies of each wafer and generating an initial two-dimensional array corresponding to each wafer according to the test results of each dies include:

[0011] Performing ATE testing on the plurality of dies of each wafer in turn, and determining each of the dies as a qualified die or a failed die according to the test result;

[0012] The initial elements corresponding to the row and column numbers of the qualified grains are assigned a first value, and the initial elements corresponding to the row and column numbers of the unqualified grains are assigned a second value, so as to generate an initial two-dimensional array corresponding to each wafer.

[0013] In one implementation, determining the fused two-dimensional array according to the N initial two-dimensional arrays includes:

[0014] Adding the values ​​of multiple initial elements with the same number of rows and columns in the N initial two-dimensional arrays to obtain multiple fused values;

[0015] The plurality of fused values ​​are respectively assigned to the plurality of fused elements to obtain the fused two-dimensional array, wherein the number of rows and columns of the fused elements is the same as the number of rows and columns of the plurality of initial elements added to obtain the corresponding fused values.

[0016] In one embodiment, determining a first target element that meets a preset screening condition from the plurality of fused elements includes:

[0017] Determine, among the plurality of fused elements, a fused element whose value is equal to N as an initial target element;

[0018] Determine whether the values ​​of a plurality of the fused elements within a preset range centered on the initial target element are all equal to N;

[0019] If so, the initial target element is determined as the first target element; if not, the initial target element is determined as the second target element.

[0020] In one embodiment, the determining of a first target element that meets a preset screening condition from the plurality of fused elements further includes:

[0021] Among the multiple fused elements, the fused elements whose values ​​are not equal to N are determined as the second target elements.

[0022] In one embodiment, the method further includes: assigning each of the first target elements to the first value and each of the second target elements to the second value to obtain a target two-dimensional array; and determining the number of target grains based on the target two-dimensional array.

[0023] In one embodiment, the number of target grains is determined according to the target two-dimensional array, and the formula is:

[0024]

[0025] Where n represents the number of target grains, N represents the number of wafers, Represents the sum of the values ​​of each of the first target elements and each of the second target elements in the target two-dimensional array.

[0026] In a second aspect, the present invention provides a target grain determination device, the device comprising:

[0027] An acquisition unit is used to acquire a wafer set to be tested, wherein the wafer set to be tested includes N wafers, and each of the wafers includes a plurality of dies;

[0028] A first array creation unit is used to sequentially perform qualification tests on the plurality of dies of each wafer, and generate an initial two-dimensional array corresponding to each wafer according to the test results of each dies, wherein the initial two-dimensional array includes a plurality of initial elements, and each initial element represents a test result of a dies having the same number of rows and columns as the initial element;

[0029] A second array creation unit is used to determine a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array includes a plurality of fused elements, each of which represents the sum of the values ​​of a plurality of the initial elements having the same number of rows and columns as the initial elements;

[0030] A first determining unit, configured to traverse the fused two-dimensional array and determine a first target element that meets a preset screening condition from a plurality of fused elements;

[0031] The second determining unit is used to determine the multiple initial elements corresponding to the first target element as target initial elements, and determine the grains corresponding to the respective target initial elements as target grains.

[0032] In a third aspect, the present invention provides an electronic device, comprising a memory and a processor, wherein the memory stores a computer program, and when the computer program runs on the processor, the target grain determination method described in the first aspect is executed.

[0033] In a fourth aspect, the present invention provides a computer-readable storage medium storing a computer program, wherein the computer program is executed by a processor to perform the target grain determination method described in the first aspect.

[0034] The present invention provides a method, device, electronic device and medium for determining a target grain, by obtaining a wafer set to be tested, the wafer set to be tested includes N wafers, each of which includes multiple grains; sequentially performing qualification tests on the multiple grains of each wafer, and generating an initial two-dimensional array corresponding to each wafer according to the test results of each grain, the initial two-dimensional array includes multiple initial elements, each of which represents the test results of grains with the same number of rows and columns; determining a fused two-dimensional array according to the N initial two-dimensional arrays, the fused two-dimensional array includes multiple fused elements, each of which represents the sum of the values ​​of multiple initial elements with the same number of rows and columns; traversing the fused two-dimensional array, determining a first target element that meets a preset screening condition from multiple fused elements; determining multiple initial elements corresponding to the first target element as target initial elements, and determining the grains corresponding to each target initial element as target grains. The present invention improves the recognition speed and recognition accuracy of target grains by representing the wafer with an initial two-dimensional array, and generating a fused two-dimensional array according to the initial two-dimensional array to select target grains.

[0035] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0037] Figure 1 A schematic diagram of a process of a target grain determination method provided by an embodiment of the present invention is shown;

[0038] Figure 2 Another schematic diagram of the process of determining the target grain provided by the embodiment of the present invention is shown;

[0039] Figure 3 A schematic diagram of the structure of a target grain determination device provided by an embodiment of the present invention is shown;

[0040] Figure 4 A schematic structural diagram of an electronic device provided by an embodiment of the present invention is shown.

[0041] Description of main component symbols:

[0042] 300 - target grain determination device; 310 - acquisition unit; 320 - first array creation unit; 330 - second array creation unit; 340 - first determination unit; 350 - second determination unit; 400 - electronic device; 401 - transceiver; 402 - processor; 403 - memory. DETAILED DESCRIPTION

[0043] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0044] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of the template are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0046] Example 1

[0047] The embodiment of the present invention provides a method for determining a target grain. For details, see Figure 1 , the method includes steps S110~S150.

[0048] For ease of understanding, before introducing the embodiments of the present application, a brief introduction to the terms and concepts involved in the embodiments of the present application is given:

[0049] Wafer: A circular semiconductor material substrate, which is the basic material in the integrated circuit manufacturing process and is used to make chips and other semiconductor devices.

[0050] Die: A die is a small piece of semiconductor material cut from a wafer, usually a complete chip or device. A die is the basic unit of an integrated circuit.

[0051] Good Die: The functional test, electrical performance test, packaging test and temperature cycle test are performed on each die on the wafer through automated test equipment (ATE), and whether the die is a good die is determined based on the test results.

[0052] Failed Die: Each die on the wafer is subjected to functional testing, electrical performance testing, packaging testing, temperature cycle testing, etc. through automatic testing equipment, and whether the die is a failed die is determined based on the test results.

[0053] Target die (Alphadie): In this embodiment, the target die refers to a qualified die that meets a preset screening condition within a preset range.

[0054] Step S110, obtaining a wafer set to be tested, wherein the wafer set to be tested includes N wafers, and each of the wafers includes a plurality of dies;

[0055] It should be noted that wafers are the basic materials used to make chips and other semiconductor devices. Through a series of process steps, pre-designed chip patterns are etched and deposited layer by layer onto the wafer surface. These chip patterns are called grains.

[0056] Step S120, sequentially performing qualification tests on the plurality of dies of each wafer, and generating an initial two-dimensional array corresponding to each wafer according to the test results of each dies, wherein the initial two-dimensional array includes a plurality of initial elements, and each initial element represents a test result of a dies having the same number of rows and columns as the initial element;

[0057] In this embodiment, after a group of wafers are tested by ATE, each die included in each wafer can be determined as a qualified die or a failed die, and the position information of each qualified die and failed die can be obtained. The qualified die is assigned a first value, such as 1, and the failed die is assigned a second value, such as 0, thereby generating an initial two-dimensional array corresponding to each wafer. For details, see Figure 2 , step S120 includes step S121 and step S122.

[0058] Step S121, performing ATE testing on the plurality of dies of each wafer in turn, and determining each of the dies as a qualified die or a failed die according to the test result;

[0059] In this embodiment, ATE testing includes but is not limited to functional testing, electrical performance testing, packaging testing and temperature cycle testing. If all test results of a die are qualified, the die is determined as a qualified die, otherwise it is determined as an unqualified die.

[0060] Step S122, assigning the initial element corresponding to the row and column number of each qualified grain to a first value, assigning the initial element corresponding to the row and column number of each unqualified grain to a second value, and generating an initial two-dimensional array corresponding to each wafer.

[0061] In this embodiment, the multiple initial elements included in the initial two-dimensional array correspond to the positions of each grain in the wafer, and the value of the initial element represents the test result of each grain. For example, if the value of the initial element is a first value, such as 1, it means that the grain corresponding to the initial element is a qualified grain, and if the value of the initial element is a second value, such as 0, it means that the grain corresponding to the initial element is an unqualified grain. Each grain in each wafer is traversed respectively, thereby determining the initial two-dimensional array corresponding to each wafer.

[0062] Step S130, determining a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array includes a plurality of fused elements, each of which represents the sum of the values ​​of a plurality of initial elements having the same number of rows and columns as the initial elements;

[0063] In this embodiment, the N wafers included in the wafer set are respectively represented by initial two-dimensional arrays to obtain N initial two-dimensional arrays. The values ​​of the initial elements with the same number of rows and columns in the N initial two-dimensional arrays are added, and the result is stored in a fused two-dimensional array.

[0064] In one embodiment, determining a fused two-dimensional array (fussmap) based on the N initial two-dimensional arrays includes: adding the values ​​of multiple initial elements with the same number of rows and columns in the N initial two-dimensional arrays to obtain multiple fused values; assigning the multiple fused values ​​to multiple fused elements respectively to obtain the fused two-dimensional array, the number of rows and columns of the fused elements being the same as the number of rows and columns of the multiple initial elements whose corresponding fused values ​​are obtained by adding them.

[0065] In this embodiment, the fused two-dimensional array includes multiple fused elements, each fused element corresponds to multiple initial elements with the same number of rows and columns, and the value of each fused element is equal to the sum of the values ​​of the multiple initial elements with the same number of rows and columns.

[0066] Step S140, traversing the fused two-dimensional array, and determining a first target element that meets a preset screening condition from a plurality of fused elements;

[0067] It should be noted that in some application scenarios, such as automotive-grade applications, the requirements for grain selection are more stringent. Qualified grains determined only by ATE testing may not meet application requirements. Therefore, multiple qualified grains need to be further selected to screen out the target grains.

[0068] In this embodiment, the initial two-dimensional array corresponding to each wafer is generated according to the ATE test results of each die, and after the fused two-dimensional array is determined according to each initial two-dimensional array, each fused element in the fused two-dimensional array is further judged. Specifically, if the value of the fused element x is equal to N, and the values ​​of multiple fused elements within a preset range centered on the fused element x are all N, for example, the values ​​of multiple fused elements within a 3×3 area are all N, then the fused element x is determined to be the first target element. For the fused elements located at the edge and unable to be divided into the preset range, it is determined that they do not meet the preset screening conditions and are determined as the second target element.

[0069] In one embodiment, determining the first target element that meets the preset screening conditions from the multiple fused elements includes: determining the fused element whose value is equal to N among the multiple fused elements as the initial target element; judging whether the values ​​of the multiple fused elements within a preset range centered on the initial target element are all equal to N; if so, determining the initial target element as the first target element, if not, determining the initial target element as the second target element.

[0070] In this embodiment, each fused element in the fused two-dimensional array is traversed, and each fused element is determined as the first target element or the second target element.

[0071] In one embodiment, determining the first target element that meets the preset screening condition from the multiple fused elements further includes: determining the fused element whose value is not equal to N among the multiple fused elements as the second target element.

[0072] It should be noted that the first target element is a fusion element within a preset range that meets the preset screening condition, and the second target element is a fusion element within the preset range that does not meet the preset screening condition.

[0073] Step S150: determining the plurality of initial elements corresponding to the first target element as target initial elements, and determining the grains corresponding to the respective target initial elements as target grains.

[0074] In this embodiment, the first target element is a fused element within a preset range that meets preset screening conditions. The fused element is obtained by adding multiple initial elements with the same number of rows and columns in N initial two-dimensional arrays. Therefore, the first target element corresponds to multiple initial elements with the same number of rows and columns. These initial elements are determined as target initial elements, and the grains represented by each target initial element are determined as target grains.

[0075] It should be noted that the N wafers in the wafer set to be tested are all from the same production line, and the functions and structures of the grains at the same position of each wafer are the same. For multiple identical wafers from the same production line, since their production processes and formation environments are the same, if the grain at a certain position of a certain wafer is an unqualified grain, it is considered that the production process of the grain at that position may have unqualified risks. In order to avoid using grains with unqualified risks, all the grains at that position in a group of wafers need to be discarded.

[0076] In one embodiment, the method further includes: assigning each of the first target elements to the first value and each of the second target elements to the second value to obtain a target two-dimensional array; and determining the number of target grains based on the target two-dimensional array.

[0077] In this embodiment, the first target element is assigned a first value, such as 1, and the second target element is assigned a second value, such as 0, to generate a target two-dimensional array. The target two-dimensional array includes multiple target elements, and the number of target grains can be counted based on the sum of the values ​​corresponding to each target element.

[0078] In one embodiment, the number of target grains is determined according to the target two-dimensional array, and the formula is:

[0079]

[0080] Where n represents the number of target grains, N represents the number of wafers, Represents the sum of the values ​​of each of the first target elements and each of the second target elements in the target two-dimensional array.

[0081] In this embodiment, for example, there are 6 wafers, and the sum of the values ​​corresponding to the target elements in the target two-dimensional array is 10, then it can be determined that the number of target grains in this group of wafers is n=6×10=60.

[0082] The target grain determination method provided by the embodiment of the present invention is to obtain a wafer set to be tested, wherein the wafer set to be tested includes N wafers, each of which includes multiple grains; sequentially perform qualification tests on the multiple grains of each wafer, and generate an initial two-dimensional array corresponding to each wafer according to the test results of each grain, wherein the initial two-dimensional array includes multiple initial elements, each of which represents the test results of grains with the same number of rows and columns; determine a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array includes multiple fused elements, each of which represents the sum of the values ​​of multiple initial elements with the same number of rows and columns; traverse the fused two-dimensional array, and determine the first target element that meets the preset screening conditions from the multiple fused elements; determine the multiple initial elements corresponding to the first target element as the target initial elements, and determine the grains corresponding to each target initial element as the target grains. The present invention greatly improves the recognition efficiency and recognition accuracy of the target grains by representing each wafer with an initial two-dimensional array and generating a fused two-dimensional array to determine the position and number of the target grains.

[0083] Example 2

[0084] In addition, the present invention also provides a target grain determination device, for details, see Figure 3 , the target grain determination device 300 comprises:

[0085] An acquisition unit 310 is used to acquire a wafer set to be tested, wherein the wafer set to be tested includes N wafers, and each of the wafers includes a plurality of dies;

[0086] A first array creation unit 320 is used to sequentially perform qualification tests on the plurality of dies of each wafer, and generate an initial two-dimensional array corresponding to each wafer according to the test results of each dies, wherein the initial two-dimensional array includes a plurality of initial elements, and each initial element represents a test result of a dies having the same number of rows and columns as the initial element;

[0087] The second array creation unit 330 is used to determine a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array includes a plurality of fused elements, each of which represents the sum of the values ​​of a plurality of initial elements having the same number of rows and columns as the initial elements;

[0088] A first determining unit 340 is used to traverse the fused two-dimensional array and determine a first target element that meets a preset screening condition from a plurality of fused elements;

[0089] The second determining unit 350 is configured to determine the plurality of initial elements corresponding to the first target element as target initial elements, and determine the grains corresponding to the respective target initial elements as target grains.

[0090] The target grain determination device provided by the embodiment of the present invention comprises an acquisition unit for acquiring a wafer set to be tested, wherein the wafer set to be tested comprises N wafers, each of which comprises a plurality of grains; a first array creation unit for sequentially performing qualification tests on the plurality of grains of each wafer, and generating an initial two-dimensional array corresponding to each wafer according to the test results of each grain, wherein the initial two-dimensional array comprises a plurality of initial elements, each of which represents the test results of grains having the same number of rows and columns as the initial two-dimensional array; a second array creation unit for determining a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array comprises a plurality of fused elements, each of which represents the sum of the values ​​of the plurality of initial elements having the same number of rows and columns as the initial two-dimensional array; a first determination unit for traversing the fused two-dimensional array and determining a first target element that meets a preset screening condition from the plurality of fused elements; and a second determination unit for determining the plurality of initial elements corresponding to the first target element as target initial elements, and determining the grains corresponding to the plurality of target initial elements as target grains. The present invention represents each wafer with an initial two-dimensional array and generates a fused two-dimensional array to determine the position and quantity of the target crystal grains, thereby greatly improving the recognition efficiency and recognition accuracy of the target crystal grains.

[0091] Example 3

[0092] In addition, an embodiment of the present invention provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and when the computer program runs on the processor, the target grain determination method provided in Embodiment 1 is executed.

[0093] For details, see Figure 4 The electronic device 400 includes: a transceiver 401, a bus interface and a processor 402, wherein the processor 402 is used to obtain a wafer set to be tested, wherein the wafer set to be tested includes N wafers, each of which includes multiple grains; sequentially perform qualification tests on the multiple grains of each wafer, and generate an initial two-dimensional array corresponding to each wafer according to the test results of each grain, wherein the initial two-dimensional array includes multiple initial elements, each of which represents the test results of the grains with the same number of rows and columns; determine a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array includes multiple fused elements, each of which represents the sum of the values ​​of the multiple initial elements with the same number of rows and columns; traverse the fused two-dimensional array, and determine a first target element that meets the preset screening conditions from the multiple fused elements; determine the multiple initial elements corresponding to the first target element as target initial elements, and determine the grains corresponding to each target initial element as target grains.

[0094] In the embodiment of the present invention, the electronic device 400 further includes a memory 403. Figure 4 In the embodiment, the bus architecture may include any number of interconnected buses and bridges, specifically linking various circuits of one or more processors represented by processor 402 and memory represented by memory 403. The bus architecture may also link various other circuits such as peripherals, voltage regulators, and power management circuits, which are well known in the art and are therefore not further described herein. The bus interface provides an interface. The transceiver 401 may be a plurality of components, i.e., including a transmitter and a receiver, providing a unit for communicating with various other devices on a transmission medium. The processor 402 is responsible for managing the bus architecture and general processing, and the memory 403 may store data used by the processor 402 when performing operations.

[0095] The electronic device 400 provided in the embodiment of the present invention can execute the target grain determination method provided in the above method embodiment 1, which will not be described again to avoid repetition.

[0096] Example 4

[0097] In addition, an embodiment of the present invention provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the target grain determination method provided in Embodiment 1 is implemented.

[0098] In this embodiment, the computer-readable storage medium may be a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0099] The computer-readable storage medium provided in this embodiment can implement the target grain method provided in Embodiment 1, and will not be described again here to avoid repetition.

[0100] In all examples shown and described herein, any specific values ​​should be interpreted as merely exemplary and not as limiting, and thus other examples of the exemplary embodiments may have different values.

[0101] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0102] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A method for determining a target grain, characterized in that: The method comprises: Acquire a wafer set to be tested, wherein the wafer set to be tested includes N wafers, and each of the wafers includes a plurality of dies; Performing qualification tests on the plurality of dies of each wafer in turn, and generating an initial two-dimensional array corresponding to each wafer according to the test results of each dies, wherein the initial two-dimensional array includes a plurality of initial elements, and each initial element represents the test result of the dies having the same number of rows and columns as the initial element; Determine a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array includes a plurality of fused elements, each of which represents the sum of the values ​​of a plurality of initial elements having the same number of rows and columns as the initial elements; Traversing the fused two-dimensional array, and determining a first target element that meets a preset screening condition from a plurality of fused elements; Determine the plurality of initial elements corresponding to the first target element as target initial elements, and determine the grains corresponding to the respective target initial elements as target grains, wherein the target grains refer to qualified grains that meet preset screening conditions within a preset range; The method of sequentially performing qualification tests on the multiple grains of each wafer and generating an initial two-dimensional array corresponding to each wafer according to the test results of each grain includes: sequentially performing ATE tests on the multiple grains of each wafer and determining each grain as a qualified grain or an unqualified grain according to the test results; assigning a first value to the initial element corresponding to the row and column number of each qualified grain and a second value to the initial element corresponding to the row and column number of each unqualified grain, thereby generating an initial two-dimensional array corresponding to each wafer.

2. The target grain determination method according to claim 1, characterized in that: The step of determining the fused two-dimensional array according to the N initial two-dimensional arrays includes: Adding the values ​​of multiple initial elements with the same number of rows and columns in the N initial two-dimensional arrays to obtain multiple fused values; The plurality of fused values ​​are respectively assigned to the plurality of fused elements to obtain the fused two-dimensional array, wherein the number of rows and columns of the fused elements is the same as the number of rows and columns of the plurality of initial elements added to obtain the corresponding fused values.

3. The target grain determination method according to claim 2, characterized in that: The determining of a first target element that meets a preset screening condition from the plurality of fused elements comprises: Determine, among the plurality of fused elements, a fused element whose value is equal to N as an initial target element; Determine whether the values ​​of a plurality of the fused elements within a preset range centered on the initial target element are all equal to N; If so, the initial target element is determined as the first target element; if not, the initial target element is determined as the second target element.

4. The target grain determination method according to claim 3, characterized in that: The determining of a first target element that meets a preset screening condition from the plurality of fused elements further includes: Among the multiple fused elements, the fused elements whose values ​​are not equal to N are determined as the second target elements.

5. The target grain determination method according to claim 4, characterized in that: The method further comprises: Assign the first target elements to the first value, and assign the second target elements to the second value, to obtain a target two-dimensional array; According to the target two-dimensional array, the number of the target grains is determined.

6. The target grain determination method according to claim 5, characterized in that: The number of target grains is determined according to the target two-dimensional array, and the formula is: Where n represents the number of target grains, N represents the number of wafers, Represents the sum of the values ​​of each of the first target elements and each of the second target elements in the target two-dimensional array.

7. A target grain determination device, characterized in that: The device comprises: An acquisition unit is used to acquire a wafer set to be tested, wherein the wafer set to be tested includes N wafers, and each of the wafers includes a plurality of dies; A first array creation unit is used to sequentially perform qualification tests on the plurality of dies of each wafer, and generate an initial two-dimensional array corresponding to each wafer according to the test results of each dies, wherein the initial two-dimensional array includes a plurality of initial elements, and each initial element represents a test result of a dies having the same number of rows and columns as the initial element; A second array creation unit is used to determine a fused two-dimensional array according to the N initial two-dimensional arrays, wherein the fused two-dimensional array includes a plurality of fused elements, each of which represents the sum of the values ​​of a plurality of the initial elements having the same number of rows and columns as the initial elements; A first determining unit, configured to traverse the fused two-dimensional array and determine a first target element that meets a preset screening condition from a plurality of fused elements; A second determining unit is used to determine the multiple initial elements corresponding to the first target element as target initial elements, and determine the grains corresponding to the target initial elements as target grains, wherein the target grains refer to qualified grains that meet preset screening conditions within a preset range; The method of sequentially performing qualification tests on the multiple grains of each wafer and generating an initial two-dimensional array corresponding to each wafer according to the test results of each grain includes: sequentially performing ATE tests on the multiple grains of each wafer and determining each grain as a qualified grain or an unqualified grain according to the test results; assigning a first value to the initial element corresponding to the row and column number of each qualified grain and a second value to the initial element corresponding to the row and column number of each unqualified grain, thereby generating an initial two-dimensional array corresponding to each wafer.

8. An electronic device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and when the computer program is run on the processor, the target grain determination method according to any one of claims 1 to 6 is executed.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the target grain determination method according to any one of claims 1 to 6 is implemented.

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