Semiconductor device with double gate structure, method of manufacturing the same and electronic device
By employing a dual-gate structure and epitaxial growth technology in semiconductor devices, the challenges of controlling the thickness and diameter of nanosheets or nanowires have been solved, gate-induced drain leakage has been suppressed, and the integration density and performance of the devices have been improved.
CN118431296BActive Publication Date: 2026-07-03INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2021-08-27
- Publication Date
- 2026-07-03
Smart Images
Figure CN118431296B_ABST
Abstract
A semiconductor device with a dual-gate structure, a method for manufacturing the same, and an electronic device including such a semiconductor device are disclosed. According to an embodiment, the semiconductor device may include: a vertical channel portion on a substrate; source / drain portions located at the upper and lower ends of the channel portion relative to the substrate; a first gate stack on a first side of the channel portion in a first direction laterally relative to the substrate; and a second gate stack on a second side of the channel portion opposite to the first side in the first direction. The distance between at least one edge of the upper and lower edges of the first gate stack near the channel portion in the vertical direction and the corresponding source / drain portion may be less than the distance between at least one edge of the upper and lower edges of the second gate stack near the channel portion in the vertical direction corresponding to the aforementioned at least one edge and the corresponding source / drain portion.
Need to check novelty before this filing date? Find Prior Art