Solar cell, manufacturing method thereof, and photovoltaic module

Abstract

The present application relates to a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes a substrate, a composite structure layer, and a grid line structure; the composite structure layer is disposed on at least one side of the substrate, the composite structure layer includes a first antireflection layer and a conductive layer, and a positive projection of the first antireflection layer on the substrate does not overlap with a positive projection of the conductive layer on the substrate; the grid line structure is electrically connected to the conductive layer. In this way, the solar cell can integrate the optical performance of the antireflection layer and the electrical performance of the conductive layer, enabling the solar cell to balance the optical and electrical performances, improve the utilization rate of light by the solar cell, increase the photocurrent of the solar cell and the transmission efficiency of the photocurrent, and thus facilitate improving the conversion efficiency of the solar cell.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic cell technology, and in particular to solar cells and methods for making the same, as well as photovoltaic modules. Background Art

[0002] Solar cells, also known as photovoltaic cells, are semiconductor devices that convert sunlight directly into electrical energy. As they are green and environmentally friendly products that do not cause environmental pollution, and solar energy is a renewable resource, solar cells are a new type of battery with broad development prospects.

[0003] Solar cells include crystalline silicon cells, thin-film cells and emerging cells (such as organic photovoltaic cells). Solar cells mainly consist of power-generating semiconductor units and electrodes; the power-generating semiconductor units use the photovoltaic effect to convert sunlight into photogenerated carriers; the electrodes can collect and converge the photogenerated carriers generated by the power-generating semiconductor units on the photovoltaic cells.

[0004] In the related technology, the film layer in contact with the electrode in the solar cell has problems such as parasitic absorption or poor conductivity, which causes the loss of optical absorption of the solar cell, affects the collection and convergence of photogenerated carriers by the electrode, leads to reduced light utilization rate of the solar cell, and reduces the photogenerated current of the solar cell, which in turn limits the improvement of the conversion efficiency of the solar cell. Summary of the invention

[0005] Based on this, the present application provides a solar cell and a manufacturing method thereof, as well as a photovoltaic module to improve the conversion efficiency of the solar cell.

[0006] An embodiment of the first aspect of the present application provides a solar cell, comprising:

[0007] substrate;

[0008] A composite structure layer is disposed on at least one side of the substrate, the composite structure layer comprising a first anti-reflection layer and a conductive layer, and an orthographic projection of the first anti-reflection layer on the substrate and an orthographic projection of the conductive layer on the substrate do not overlap;

[0009] A gate line structure is electrically connected to the conductive layer.

[0010] In one of the embodiments, the orthographic projection of the first anti-reflection layer on the substrate and the orthographic projection of the conductive layer on the substrate are arranged alternately.

[0011] In one embodiment, the first anti-reflection layer and the conductive layer are disposed on the same layer.

[0012] In one embodiment, the composite structure layer further includes a second anti-reflection layer; the second anti-reflection layer is located on a side of the conductive layer facing away from the substrate, or the second anti-reflection layer is located on a side of the conductive layer close to the substrate.

[0013] In one embodiment, the second anti-reflection layer is disposed on the same layer as the first anti-reflection layer.

[0014] In one embodiment, the gate line structure includes a first gate line, and the orthographic projection of the first gate line on the substrate overlaps with the orthographic projection of the first anti-reflection layer on the substrate; and the orthographic projection of the first gate line on the substrate overlaps with the orthographic projection of the conductive layer on the substrate.

[0015] In one embodiment, the first anti-reflection layer is located on a side of the first gate line close to the substrate, and the first gate line passes through the first anti-reflection layer and is electrically connected to the substrate;

[0016] The conductive layer is located on a side of the first gate line close to the substrate; or, the conductive layer is located on a side of the first gate line away from the substrate; and the conductive layer is electrically connected to the first gate line.

[0017] In one embodiment, the gate line structure includes a second gate line, and the first gate line intersects with the second gate line; the second gate line is located on a side of the composite structure layer facing away from the substrate.

[0018] In one embodiment, the orthographic projection of the second gate line on the substrate is within the orthographic projection range of the first anti-reflection layer on the substrate; the second gate line passes through the first anti-reflection layer and is electrically connected to the substrate;

[0019] Alternatively, the orthographic projection of the second gate line on the substrate is located within the orthographic projection range of the conductive layer on the substrate; and the second gate line is electrically connected to the conductive layer.

[0020] In one embodiment, the thickness of the first anti-reflection layer is 20 nm to 120 nm; and / or

[0021] The first anti-reflection layer is a single-layer or stacked-layer structure, and the material of the first anti-reflection layer includes at least one of silicon oxide, silicon nitride, magnesium fluoride, and titanium oxide.

[0022] In one embodiment, the thickness of the conductive layer is 20 nm to 120 nm; and / or

[0023] The conductive layer is a transparent conductive layer, and the material of the conductive layer includes at least one of aluminum-doped zinc oxide, indium tin oxide, indium cerium oxide, indium tungsten oxide, indium molybdenum oxide, indium hydride oxide, doped zirconium, titanium, calcium indium oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, aluminum-gallium co-doped zinc oxide, and tin oxide.

[0024] In one embodiment, the thickness of the second antireflection layer is 20 nm to 120 nm; and / or

[0025] The second antireflection layer is a single-layer or multilayer structure, and the material of the second antireflection layer includes at least one of silicon oxide, silicon nitride, magnesium fluoride, and titanium oxide.

[0026] An embodiment of the second aspect of the present application provides a method for manufacturing a solar cell, including:

[0027] Providing a substrate;

[0028] Forming a composite structure layer on at least one side of the substrate, the composite structure layer includes a first antireflection layer and a conductive layer, and the orthographic projection of the first antireflection layer on the substrate does not overlap with the orthographic projection of the conductive layer on the substrate.

[0029] An embodiment of the third aspect of the present application provides a photovoltaic module, including the solar cell described in any one of the above embodiments.

[0030] For the above-mentioned solar cell, a composite structure layer is provided on at least one side of the substrate. By making the composite structure layer include a first antireflection layer and a conductive layer, the orthographic projection of the first antireflection layer on the substrate does not overlap with the orthographic projection of the conductive layer on the substrate; the grid line structure is electrically connected to the conductive layer. In this way, it is equivalent to setting a first antireflection layer in a part of the area on at least one side of the substrate and a conductive layer in another part of the area, and the grid line structure is electrically connected to the conductive layer. Thus, on the one hand, the first antireflection layer can reduce the reflection of light by the solar cell and improve the utilization rate of light by the solar cell; on the other hand, the parasitic absorption of the conductive layer can be reduced. At the same time, the conductivity of the conductive layer is conducive to the lateral and longitudinal transmission of photo-generated carriers, which is conducive to the collection and convergence of photo-generated carriers by the grid line structure and improves the photo-generated current of the solar cell. In summary, the present application can combine the optical performance of the antireflection layer and the electrical performance of the conductive layer, enabling the solar cell to take into account both optical and electrical performance, improving the utilization rate of light by the solar cell, increasing the photo-generated current of the solar cell and the transmission efficiency of the photo-generated current, and then facilitating the improvement of the conversion efficiency of the solar cell. Description of the Drawings

[0031] Figure 1 It is a top view structural schematic diagram of a solar cell provided by some embodiments of the present application.

[0032] Figure 2 isFigure 1 Schematic cross-sectional structure diagram of the solar cell shown in the A-A direction.

[0033] Figure 3 is Figure 1 Another schematic cross-sectional structure diagram of the solar cell shown in the A-A direction.

[0034] Figure 4 is Figure 1 Another schematic cross-sectional structure diagram of the solar cell shown in the A-A direction.

[0035] Figure 5 is Figure 1 Another schematic cross-sectional structure diagram of the solar cell shown in the A-A direction.

[0036] Figure 6 is Figure 1 Another schematic cross-sectional structure diagram of the solar cell shown in the A-A direction.

[0037] Figure 7 is Figure 1 Another schematic cross-sectional structure diagram of the solar cell shown in the A-A direction.

[0038] Figure 8 Another schematic top view structure diagram of the solar cell provided by some embodiments of the present application.

[0039] Figure 9 Another schematic top view structure diagram of the solar cell provided by some embodiments of the present application.

[0040] Explanation of reference numerals:

[0041] 10. Solar cell;

[0042] 110. Substrate; 120. Composite structure layer; 121. First antireflection layer; 122. Conductive layer; 123. Second antireflection layer; 130. Grid line structure; 131. First grid line; 132. Second grid line. Detailed implementation manners

[0043] To make the above objects, features, and advantages of the present application more obvious and understandable, the following will describe the detailed implementation manners of the present application in conjunction with the accompanying drawings. Many specific details are set forth in the following description to facilitate a thorough understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0044] In the description of the present application, it should be understood that if there are terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., the orientation or positional relationship indicated by these terms is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.

[0045] In addition, if there are terms such as "first" and "second", these terms are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of the present application, if there is a term "plurality", the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0046] In the present application, unless otherwise clearly specified and limited, if there are terms such as "mounted", "connected", "connected to", "fixed", etc., these terms should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0047] In the present application, unless otherwise clearly specified and limited, if there is a description such as a first feature being "on" or "under" a second feature, the meaning may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "under" the second feature may be that the first feature is directly below or obliquely below the second feature, or simply indicates that the first feature has a lower horizontal height than the second feature.

[0048] It should be noted that if an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intermediate element at the same time. If present, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are only for illustrative purposes and do not represent the only implementation.

[0049] Solar cells include crystalline silicon cells, thin film cells, and emerging cells (such as organic photovoltaic cells), etc. Solar cells mainly include a power generation semiconductor unit and electrodes; the power generation semiconductor unit uses the photovoltaic effect to convert sunlight into photo-generated carriers; the electrodes can collect and converge the photo-generated carriers generated by the power generation semiconductor unit on the photovoltaic cell.

[0050] In the related art, there are problems such as parasitic absorption or poor conductivity in the film layer in contact with the electrode in the solar cell, resulting in loss of optical absorption of the solar cell, affecting the collection and convergence of photo-generated carriers by the electrode, reducing the light utilization rate of the solar cell, reducing the photo-generated current of the solar cell, and then restricting the improvement of the conversion efficiency of the solar cell.

[0051] Based on the above technical problems, this application provides a solar cell, its manufacturing method, and a photovoltaic module to improve the conversion efficiency of the solar cell.

[0052] In the first aspect, referring to Figure 1 , an embodiment of this application provides a solar cell 10, including a substrate 110, a composite structure layer 120, and a grid line structure 130; the composite structure layer 120 is disposed on at least one side of the substrate 110, the composite structure layer 120 includes a first antireflection layer 121 and a conductive layer 122, and the orthographic projection of the first antireflection layer 121 on the substrate 110 does not overlap with the orthographic projection of the conductive layer 122 on the substrate 110; the grid line structure 130 is electrically connected to the conductive layer 122.

[0053] The solar cell 10 provided by the embodiment of the present application has a composite structure layer 120 disposed on at least one side of the substrate 110. By making the composite structure layer 120 include a first antireflection layer 121 and a conductive layer 122, there is no overlap between the orthographic projection of the first antireflection layer 121 on the substrate 110 and the orthographic projection of the conductive layer 122 on the substrate 110; the grid line structure 130 is electrically connected to the conductive layer 122. In this way, it is equivalent to setting the first antireflection layer 121 in a part of the area on at least one side of the substrate 110 and setting the conductive layer 122 in another part of the area, and the grid line structure 130 is electrically connected to the conductive layer 122. In this way, on the one hand, the first antireflection layer 121 can be used to reduce the reflection of the solar cell 10 to light, and the utilization rate of light by the solar cell 10 can be improved; on the other hand, the parasitic absorption of the conductive layer 122 can be reduced. At the same time, the conductivity of the conductive layer 122 is used to facilitate the lateral and longitudinal transmission of photo-generated carriers, which is conducive to the collection and confluence of photo-generated carriers by the grid line structure 130, improving the photo-generated current of the solar cell 10 and the transmission efficiency of the photo-generated current of the solar cell 10. In summary, the present application can comprehensively utilize the optical properties of the antireflection layer and the electrical properties of the conductive layer 122, enabling the solar cell 10 to take into account both optical and electrical properties, improving the utilization rate of light by the solar cell 10, increasing the photo-generated current of the solar cell 10 and the transmission efficiency of the photo-generated current, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0054] It should be noted that the solar cell 10 includes crystalline silicon cells, thin film cells and emerging cells. Crystalline silicon cells include Passivated Emitter and Rear Cell (PERC for short), Tunnel Oxide Passivated Contact (TOPCon for short), Heterojunction with Intrinsic Thin film (HJT for short), Interdigitated back contact (IBC for short), TBC (TOPCon-IBC) cells, HBC (HJT-IBC) cells, Hybrid Passivated Back Contact (HPBC) cells, etc.; thin film cells include amorphous silicon thin film cells, compound thin film cells, etc., and emerging cells include organic photovoltaic cells, dye-sensitized cells, quantum dot photovoltaics, perovskite photovoltaics, etc. The substrate 110 may include a silicon substrate and film layers provided on opposite sides of the silicon substrate. For different solar cells, the film layers provided on opposite sides of the silicon substrate are different. Taking the heterojunction cell as an example, the substrate 110 at least includes a silicon substrate, and an intrinsic amorphous silicon layer and a doped semiconductor layer are sequentially stacked on the opposite surfaces of the silicon substrate.

[0055] Longitudinally may refer to the thickness direction of the substrate 110, and transversely may refer to the direction perpendicular to the thickness direction of the substrate 110.

[0056] Such as Figure 1 , Figure 8 , Figure 9 As shown, in one embodiment, the positive projection of the first antireflection layer 121 on the substrate 110 and the positive projection of the conductive layer 122 on the substrate 110 are arranged alternately.

[0057] Thereby, it is beneficial to the transverse and longitudinal transport of photo-generated carriers at various positions of the substrate 110, facilitating the collection and confluence of photo-generated carriers by the gate line structure 130, improving the photo-generated current of the solar cell 10 and the transport efficiency of the photo-generated current, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0058] Such as Figure 2 , Figure 3 As shown, in one embodiment, the first antireflection layer 121 and the conductive layer 122 are provided on the same layer.

[0059] Thereby, without increasing the overall thickness of the solar cell 10, the solar cell 10 can take into account both optical and electrical properties, improving the conversion efficiency of the solar cell 10.

[0060] Such as Figure 6 , Figure 7 As shown, in one embodiment, the composite structure layer 120 further includes a second antireflection layer 123; the second antireflection layer 123 is located on the side of the conductive layer 122 close to the substrate 110.

[0061] Thereby, it is beneficial to reduce the thickness of the conductive layer 122, reduce the parasitic absorption of the conductive layer 122. At the same time, the optical properties of the second antireflection layer 123 and the electrical properties of the conductive layer 122 can be integrated, enabling the solar cell 10 to take into account both optical and electrical properties, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0062] Such as Figure 4 , Figure 5 As shown, in one embodiment, the composite structure layer 120 further includes a second antireflection layer 123; the second antireflection layer 123 is located on the side of the conductive layer 122 facing away from the substrate 110.

[0063] Thereby, it is beneficial to reduce the thickness of the conductive layer 122, reduce the parasitic absorption of the conductive layer 122. At the same time, the optical properties of the second antireflection layer 123 and the electrical properties of the conductive layer 122 can be integrated, enabling the solar cell 10 to take into account both optical and electrical properties, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0064] Such as Figures 4 to 7As shown, in one embodiment, the second antireflection layer 123 is disposed on the same layer as the first antireflection layer 121; the second antireflection layer 123 may be in contact with the first antireflection layer 121.

[0065] Thereby, the first antireflection layer 121 and the second antireflection layer 123 can be fabricated synchronously, reducing the fabrication process, improving the fabrication efficiency, and lowering the fabrication cost.

[0066] Such as Figure 1 、 Figure 8 、 Figure 9 As shown, in one embodiment, the gate line structure 130 includes a first gate line 131. The orthographic projection of the first gate line 131 on the substrate 110 overlaps with the orthographic projection of the first antireflection layer 121 on the substrate 110; and the orthographic projection of the first gate line 131 on the substrate 110 overlaps with the orthographic projection of the conductive layer 122 on the substrate 110.

[0067] It should be noted that the gate line structure 130 may include a plurality of first gate lines 131. The first gate lines 131 may be thin gate lines, also known as auxiliary gate lines. The plurality of first gate lines 131 are arranged at intervals in parallel, and the extending direction of the first gate lines 131 may intersect with the extending direction of the conductive layer 122.

[0068] Thereby, it is convenient for the first gate line 131 to collect photo-generated carriers, thereby increasing the photo-generated current and the transmission efficiency of the photo-generated current of the solar cell 10, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0069] Such as Figures 2 to 5 As shown, in one embodiment, the first antireflection layer 121 is located on the side of the first gate line 131 close to the substrate 110. The first gate line 131 passes through the first antireflection layer 121 and is electrically connected to the substrate 110; the conductive layer 122 is located on the side of the first gate line 131 close to the substrate 110, and the conductive layer 122 is electrically connected to the first gate line 131.

[0070] Thereby, the direct electrical connection between the first gate line 131 and the substrate 110 can be reduced, recombination can be lowered, and at the same time, it is beneficial for the first gate line 131 to collect photo-generated carriers, thereby increasing the photo-generated current and the transmission efficiency of the photo-generated current of the solar cell 10, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0071] Such as Figure 6 、 Figure 7 As shown, in one embodiment, the first antireflection layer 121 is located on the side of the first gate line 131 close to the substrate 110. The first gate line 131 passes through the first antireflection layer 121 and is electrically connected to the substrate 110; the conductive layer 122 is located on the side of the first gate line 131 away from the substrate 110; the conductive layer 122 is electrically connected to the first gate line 131.

[0072] Thus, it is beneficial for the first grid line 131 to collect photo-generated carriers, thereby improving the photo-generated current and the transmission efficiency of the photo-generated current of the solar cell 10, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0073] As Figure 8 , Figure 9 shown, in one embodiment, the grid line structure 130 includes a second grid line 132, and the first grid line 131 intersects with the second grid line 132; the second grid line 132 is located on the side of the composite structure layer 120 away from the substrate 110.

[0074] It should be noted that the grid line structure 130 may include multiple second grid lines 132, the second grid lines 132 may be main grid lines, the multiple second grid lines 132 are arranged at intervals in parallel, and the extending direction of the second grid lines 132 may be parallel to the extending direction of the conductive layer 122.

[0075] Thus, it is beneficial for the second grid line 132 to collect photo-generated carriers, and at the same time, it is beneficial for the second grid line 132 to converge and transmit the photo-generated carriers collected by the first grid line 131, thereby improving the photo-generated current and the transmission efficiency of the photo-generated current of the solar cell 10, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0076] As Figure 8 shown, in one embodiment, the orthographic projection of the second grid line 132 on the substrate 110 is within the orthographic projection range of the first anti-reflection layer 121 on the substrate 110; the second grid line 132 passes through the first anti-reflection layer 121 and is electrically connected to the substrate 110.

[0077] Thus, it is beneficial for the second grid line 132 to collect photo-generated carriers, it is beneficial for the second grid line 132 to converge and transmit the photo-generated carriers collected by the first grid line 131, improve the photo-generated current and the transmission efficiency of the photo-generated current of the solar cell 10, and thus facilitate the improvement of the conversion efficiency of the solar cell 10.

[0078] As Figure 9 shown, in one embodiment, the orthographic projection of the second grid line 132 on the substrate 110 is within the orthographic projection range of the conductive layer 122 on the substrate 110; the second grid line 132 is electrically connected to the conductive layer 122.

[0079] Thereby, the collection efficiency of the second grid line 132 for photo-generated carriers is further improved, the convergence and transmission ability of the second grid line 132 for the photo-generated carriers collected by the first grid line 131 is improved, thereby improving the photo-generated current and the transmission efficiency of the photo-generated current of the solar cell 10, and thus facilitating the improvement of the conversion efficiency of the solar cell 10.

[0080] In one embodiment, the thickness of the first antireflection layer 121 is 20 nm to 120 nm.

[0081] In one embodiment, the first antireflection layer 121 is a single-layer or stacked-layer structure, and the material of the first antireflection layer 121 includes at least one of silicon oxide, silicon nitride, magnesium fluoride, and titanium oxide. In one example, the first antireflection layer 121 includes a silicon oxide layer and a silicon nitride layer arranged in a stacked manner.

[0082] Thereby, the reflection of light by the solar cell 10 can be reduced, and the utilization rate of light by the solar cell 10 can be improved, which is beneficial to improving the conversion efficiency of the solar cell 10.

[0083] In one embodiment, the thickness of the conductive layer 122 is 20 nm to 120 nm.

[0084] In one embodiment, the conductive layer 122 is a transparent conductive layer 122.

[0085] Thereby, the utilization rate of light by the solar cell 10 can be improved, which is beneficial to improving the conversion efficiency of the solar cell 10.

[0086] In one embodiment, the material of the conductive layer 122 includes at least one of aluminum-doped zinc oxide AZO, indium tin oxide ITO, indium cerium oxide ICO, indium tungsten oxide IWO, indium molybdenum oxide IMO, indium hydride oxide IHO, scandium, zirconium, calcium-doped indium oxide SCOT, aluminum-doped zinc oxide AZO, gallium-doped zinc oxide GZO, aluminum-gallium co-doped zinc oxide GAZO, and tin oxide SnO2.

[0087] In one embodiment, the thickness of the second antireflection layer 123 is 20 nm to 120 nm.

[0088] In one embodiment, the second antireflection layer 123 is a single-layer or stacked-layer structure, and the material of the second antireflection layer 123 includes at least one of silicon oxide, silicon nitride, magnesium fluoride, and titanium oxide. In one example, the second antireflection layer 123 includes a silicon oxide layer and a silicon nitride layer arranged in a stacked manner.

[0089] The following gives several specific embodiments to illustrate the fill factor, conversion efficiency and other parameters of the solar cell of the present application.

[0090] Comparative Example 1

[0091] Silicon oxide antireflection layers are provided on opposite sides of the substrate, and a grid line structure is provided on the side of the silicon oxide antireflection layer away from the substrate; the grid line structure includes a first grid line and a second grid line.

[0092] Example 1

[0093] As Figure 2, Figure 4 , Figure 8 As shown in Figure 4 and Figure 8 , an antireflection layer of silicon oxide is provided on one side of the substrate, and a gate line structure is provided on the side of the silicon nitride antireflection layer away from the substrate; a composite structure layer and a gate line structure are provided on the other side of the substrate; the gate line structure includes a first gate line and a second gate line; the composite structure layer includes a first antireflection layer and a conductive layer, and the conductive layer is located on the side of the first gate line close to the substrate; the orthographic projection of the second gate line on the substrate is within the orthographic projection of the first antireflection layer on the substrate.

[0094] Compared with Comparative Example 1, the fill factor of the solar cell in this embodiment is increased by 0.3%, and the conversion efficiency is increased by 0.1%.

[0095] Example 2

[0096] As Figure 2 , Figure 4 and Figure 9 As shown in Figure 2 , Figure 4 and Figure 9 , an antireflection layer of silicon oxide is provided on one side of the substrate, and a gate line structure is provided on the side of the silicon nitride antireflection layer away from the substrate; a composite structure layer and a gate line structure are provided on the other side of the substrate, and the gate line structure includes a first gate line and a second gate line; the composite structure layer includes a first antireflection layer and a conductive layer, and the conductive layer is located on the side of the first gate line close to the substrate; the orthographic projection of the second gate line on the substrate is within the orthographic projection of the conductive layer on the substrate.

[0097] Compared with Comparative Example 1, the fill factor of the solar cell in this embodiment is increased by 0.5%, and the conversion efficiency is increased by 0.16%.

[0098] Example 3

[0099] As Figure 6 , Figure 8 As shown in Figure 6 and Figure 8 , an antireflection layer of silicon oxide is provided on one side of the substrate, and a gate line structure is provided on the side of the silicon nitride antireflection layer away from the substrate; a composite structure layer and a gate line structure are provided on the other side of the substrate, and the gate line structure includes a first gate line and a second gate line; the composite structure layer includes a first antireflection layer, a conductive layer and a second antireflection layer, the first antireflection layer and the second antireflection layer are arranged in the same layer, and the first gate line is located between the conductive layer and the second antireflection layer; the orthographic projection of the second gate line on the substrate is within the orthographic projection of the first antireflection layer on the substrate.

[0100] Compared with Comparative Example 1, the fill factor of the solar cell in this embodiment is increased by 0.3%, and the conversion efficiency is increased by 0.1%.

[0101] In summary, by providing a composite structure layer on at least one side of the substrate, the composite structure layer includes a first antireflection layer and a conductive layer, and there is no overlap between the orthographic projection of the first antireflection layer on the substrate and the orthographic projection of the conductive layer on the substrate; the gate line structure is electrically connected to the conductive layer, which can improve the fill factor and conversion efficiency of the solar cell.

[0102] It should be noted that the structures of the substrates of the solar cells in the above examples are the same. For example, when the solar cell is a tunnel oxide passivated contact cell, the substrate may include a substrate, a doped semiconductor layer disposed on the front surface of the substrate, and a tunnel layer and a doped polysilicon layer disposed on the back surface of the substrate.

[0103] In a second aspect, an embodiment of the present application provides a method for manufacturing a solar cell 10, including:

[0104] Providing a substrate 110;

[0105] Forming a composite structure layer 120 on at least one side of the substrate 110, the composite structure layer 120 including a first antireflection layer 121 and a conductive layer 122, and a positive projection of the first antireflection layer 121 on the substrate 110 does not overlap with a positive projection of the conductive layer 122 on the substrate 110.

[0106] In the method for manufacturing the solar cell 10 provided by the embodiment of the present application, by forming the composite structure layer 120 on at least one side of the substrate 110, the composite structure layer 120 includes the first antireflection layer 121 and the conductive layer 122, and a positive projection of the first antireflection layer 121 on the substrate 110 does not overlap with a positive projection of the conductive layer 122 on the substrate 110; the grid line structure 130 is electrically connected to the conductive layer 122. In this way, it is equivalent to providing the first antireflection layer 121 in a part of the region on at least one side of the substrate 110 and providing the conductive layer 122 in another part of the region, and the grid line structure 130 is electrically connected to the conductive layer 122. In this way, on the one hand, the first antireflection layer 121 can be used to reduce the reflection of light by the solar cell 10 and improve the utilization rate of light by the solar cell 10; on the other hand, the parasitic absorption of the conductive layer 122 can be reduced. At the same time, the conductivity of the conductive layer 122 is used to facilitate the lateral and longitudinal transmission of photo-generated carriers, facilitate the collection and confluence of photo-generated carriers by the grid line structure 130, increase the photo-generated current of the solar cell 10, and increase the transmission efficiency of the photo-generated current of the solar cell 10. In summary, the present application can comprehensively combine the optical performance of the antireflection layer and the electrical performance of the conductive layer, enable the solar cell 10 to take into account both optical and electrical performances, improve the utilization rate of light by the solar cell 10, increase the photo-generated current of the solar cell 10 and the transmission efficiency of the photo-generated current, and then facilitate the improvement of the conversion efficiency of the solar cell 10.

[0107] In a third aspect, an embodiment of the present application provides a photovoltaic module, including the solar cell 10 in any one of the above embodiments. Thereby, the conversion efficiency of the photovoltaic module can be improved.

[0108] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0109] The above embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation to the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several deformations and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A solar cell, characterized in that: include: substrate; A composite structure layer is disposed on at least one side of the substrate, the composite structure layer comprising a first anti-reflection layer and a conductive layer, and an orthographic projection of the first anti-reflection layer on the substrate and an orthographic projection of the conductive layer on the substrate do not overlap; A gate line structure, the gate line structure is electrically connected to the conductive layer; The composite structure layer further includes a second anti-reflection layer, and the second anti-reflection layer is located on a side of the conductive layer close to the substrate.

2. The solar cell according to claim 1, characterized in that The orthographic projection of the first anti-reflection layer on the substrate and the orthographic projection of the conductive layer on the substrate are arranged alternately.

3. The solar cell according to claim 1, characterized in that The first anti-reflection layer is disposed on the same layer as the conductive layer.

4. The solar cell according to claim 1, characterized in that The second anti-reflection layer is disposed on the same layer as the first anti-reflection layer.

5. The solar cell according to any one of claims 1 to 4, characterized in that: The gate line structure includes a first gate line, the orthographic projection of the first gate line on the substrate overlaps with the orthographic projection of the first anti-reflection layer on the substrate; and the orthographic projection of the first gate line on the substrate overlaps with the orthographic projection of the conductive layer on the substrate.

6. The solar cell according to claim 5, characterized in that The first anti-reflection layer is located on a side of the first gate line close to the substrate, and the first gate line passes through the first anti-reflection layer and is electrically connected to the substrate; The conductive layer is located on a side of the first gate line close to the substrate; or, the conductive layer is located on a side of the first gate line away from the substrate; and the conductive layer is electrically connected to the first gate line.

7. The solar cell according to claim 5, characterized in that: The gate line structure includes a second gate line, and the first gate line intersects with the second gate line; the second gate line is located on a side of the composite structure layer away from the substrate.

8. The solar cell according to claim 7, characterized in that: The orthographic projection of the second gate line on the substrate is located within the orthographic projection range of the first anti-reflection layer on the substrate; the second gate line passes through the first anti-reflection layer and is electrically connected to the substrate; Alternatively, the orthographic projection of the second gate line on the substrate is located within the orthographic projection range of the conductive layer on the substrate; and the second gate line is electrically connected to the conductive layer.

9. The solar cell according to claim 1, characterized in that: The thickness of the first anti-reflection layer is 20 nm to 120 nm; and / or The first anti-reflection layer is a single-layer or stacked-layer structure, and the material of the first anti-reflection layer includes at least one of silicon oxide, silicon nitride, magnesium fluoride, and titanium oxide.

10. The solar cell according to claim 1, characterized in that: The thickness of the conductive layer is 20nm to 120nm; and / or The conductive layer is a transparent conductive layer, and the material of the conductive layer includes at least one of aluminum-doped zinc oxide, tin-doped indium oxide, cerium-doped indium oxide, tungsten-doped indium oxide, molybdenum-doped indium oxide, hydrogenated indium oxide, doped zirconium, titanium, calcium indium oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, aluminum-gallium co-doped zinc oxide, and tin oxide.

11. The solar cell according to claim 1, characterized in that: The thickness of the second anti-reflection layer is 20nm to 120nm; and / or The second anti-reflection layer is a single-layer or stacked-layer structure, and the material of the second anti-reflection layer includes at least one of silicon oxide, silicon nitride, magnesium fluoride, and titanium oxide.

12. A method for manufacturing a solar cell, characterized in that: include: providing a substrate; A composite structure layer is formed on at least one side of a substrate, wherein the composite structure layer includes a first anti-reflection layer and a conductive layer, wherein an orthographic projection of the first anti-reflection layer on the substrate and an orthographic projection of the conductive layer on the substrate do not overlap; the composite structure layer also includes a second anti-reflection layer, and the second anti-reflection layer is located on a side of the conductive layer close to the substrate.

13. A photovoltaic module, characterized in that: Comprising the solar cell according to any one of claims 1 to 11.

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