Non-hermitian quantum sensing circuit and sensing system

Abstract

The present disclosure relates to a non-Hermitian quantum sensing circuit and a sensing system. The non-Hermitian quantum sensing circuit comprises at least one sensing unit, wherein the sensing unit comprises an input end, an output end, and an N-dimensional N-order quantum system cascaded between the input end and the output end, wherein N is a positive integer greater than or equal to 2, and the N-dimensional N-order quantum system is configured to form a topological adiabatic effect quantum state between the input end and the output end to receive an external disturbance signal. The present disclosure can not only have a wider range of detectable physical quantities, but also achieve a further order of magnitude improvement in sensitivity, while effectively solving the problem of unstable signal-to-noise ratio caused by the improvement in sensitivity.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of precision sensing system and the field of quantum state application, and particularly relates to a non-Hermitian quantum sensing circuit and a sensing system. BACKGROUND

[0002] High-sensitivity sensing systems play a vital role in today's society, especially in the fields of industrial and environmental monitoring, biomedical sample component analysis, wireless networks, and the like. However, although various sensing system solutions are widely used at present, people are always looking for sensing systems with higher sensitivity, because they can detect signals that were previously undetectable. Therefore, exploring new sensing solutions to design sensing systems with high sensitivity is of great significance to the next generation of electrical sensing technology. SUMMARY

[0003] Based on this, the embodiments of the present disclosure provide a non-Hermitian quantum sensing circuit and a sensing system, which not only can have a wider range of detectable physical quantities, but also can achieve a further order of magnitude improvement in sensitivity, while effectively solving the problem of unstable signal-to-noise ratio caused by improved sensitivity.

[0004] To achieve the above purpose, in a first aspect, some embodiments of the present disclosure provide a non-Hermitian quantum sensing circuit, comprising: at least one sensing unit; the sensing unit comprises: an input end, an output end, and an N-dimensional N-order quantum system cascaded between the input end and the output end; wherein N is a positive integer greater than or equal to 2; the N-dimensional N-order quantum system is used to form a topological adiabatic effect quantum state between the input end and the output end to receive an external disturbance signal.

[0005] In some embodiments of the present disclosure, the N-dimensional N-order quantum system comprises: an N-dimensional cascade of 2 raised to the power of N followers.

[0006] In some embodiments of the present disclosure, N is 2, and the two-dimensional second-order quantum system comprises: four circuit nodes and four followers.

[0007] The four circuit nodes comprise a first circuit node, a second circuit node, a third circuit node, and a fourth circuit node; wherein the first circuit node is connected to the input end, the fourth circuit node is connected to the output end, and the second circuit node and the third circuit node are respectively connected to ground through an inductor L and a capacitor C1.

[0008] The four followers include a first follower, a second follower, a third follower, and a fourth follower; wherein the first follower is connected in series between the first circuit node and the second circuit node, the second follower is connected in series between the second circuit node and the fourth circuit node, the third follower is connected in series between the first circuit node and the third circuit node, and the fourth follower is connected in series between the third circuit node and the fourth circuit node.

[0009] In some embodiments of the present disclosure, there is a common constraint LxC1 between the inductance L and the capacitance C1; the common constraint LxC1 is less than the upper limit of the voltage bandwidth of the follower.

[0010] In some embodiments of the present disclosure, the capacitance value of the capacitance C1 is greater than or equal to 1 pF.

[0011] In some embodiments of the present disclosure, the follower includes a power amplifier; the voltage following bandwidth of the power amplifier is greater than or equal to 10 GHz.

[0012] In some embodiments of the present disclosure, any of the followers is further connected in series with a corresponding connection node on the side away from the input end.

[0013] In some embodiments of the present disclosure, the number of the sensing units is a plurality; wherein the plurality of sensing units are connected in sequence; the output end of a previous stage sensing unit is the input end of a next stage sensing unit.

[0014] In the second aspect, some embodiments of the present disclosure further provide a sensing system, including the non-Hermitian quantum sensing circuit as described in any of the above embodiments, and a control chip connected with the non-Hermitian quantum sensing circuit. The control chip is configured to provide a connection control signal of the sensing unit to the non-Hermitian quantum sensing circuit.

[0015] In some embodiments of the present disclosure, the control chip includes a field programmable logic gate array control chip.

[0016] The embodiments of the present disclosure can have / at least have the following advantages:

[0017] 1. The scheme has extremely high sensitivity, and can reach single-electron-level sensitivity for a capacitive front end.

[0018] 2. The scheme has a high signal-to-noise ratio, and the non-Hermitian quantum sensing circuit adopts a high-order topology to greatly improve the stability and anti-interference ability of the system.

[0019] 3. The scheme is adaptable to any electronic production technology, whether printed circuit board (PCB) or semiconductor process (such as complementary metal-oxide semiconductor, CMOS).

[0020] 4. The scheme is adaptable to any capacitor, inductor and resistance front-end, and can be applied in optical, biological, chemical and other detection fields.

[0021] From the above, the non-Hermitian quantum sensing circuit and sensing system provided by the embodiments of the present disclosure not only can have a more extensive detectable physical quantity, but also can realize a further order of magnitude improvement in sensitivity, and effectively solve the problem of unstable signal-to-noise ratio caused by the improvement in sensitivity.

[0022] The details of one or more embodiments of the present disclosure are presented in the following drawings and description. Other features, objects, and advantages of the present disclosure will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0024] Figure 1 A structural block diagram of a non-Hermitian quantum sensing circuit provided in some embodiments;

[0025] Figure 2 An equivalent circuit schematic diagram of a two-dimensional second-order quantum system provided in some embodiments;

[0026] Figure 3 An equivalent circuit schematic diagram of a power amplifier provided in some embodiments;

[0027] Figure 4 A structural block diagram of another non-Hermitian quantum sensing circuit provided in some embodiments;

[0028] Figure 5 A structural block diagram of a control chip in a sensing system provided in some embodiments;

[0029] Figure 6 A timing control signal diagram of each serial port interface in a field programmable logic gate array control chip provided in some embodiments;

[0030] Figure 7 A schematic diagram of the corresponding relationship between sensitivity and the number of units in a sensing system provided in some embodiments;

[0031] Figure 8 A diagram showing the relationship between sensitivity and coupling strength in a sensing system provided in some embodiments;

[0032] Figure 9 A diagram showing the relationship between range and coupling strength in a sensing system provided in some embodiments;

[0033] Figure 10 A diagram showing the signal-to-noise ratio at different frequencies in a sensing system provided in some embodiments;

[0034] Figure 11 A diagram showing the application of a sensing system provided in some embodiments in the field of laser detection;

[0035] Figure 12 A diagram showing the detection report of iron ions provided in some embodiments;

[0036] Figure 13 A diagram showing the detection report of copper ions provided in some embodiments. DETAILED DESCRIPTION

[0037] For the purposes of this disclosure, reference will be made to the accompanying drawings in which it is shown a preferred embodiment of the present disclosure. The present disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and fully convey the scope of the present disclosure to those skilled in the art.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the present disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure.

[0039] It should be understood that although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

[0040] It should be understood that when one element is considered to be "connected" to another element, it can be directly connected to the other element or connected to the other element through an intermediary element. Furthermore, in the following embodiments, "connection" should be understood as "electrical connection," "communication connection," etc., if there is a transmission of electrical signals or data between the connected objects.

[0041] It should be understood that the singular forms of “a,” “an,” and “the” can also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0042] Currently, Hermitian quantum states and non-Hermitian degenerate points (singularities) have attracted widespread attention as a means to improve the responsivity of sensing systems. Based on this technology, various processes have been applied to realize correlation sensing systems, and it has been demonstrated that correlation sensing systems exhibit exponential responsivity enhancement. However, in recent studies, the signal-to-noise ratio (SNR) performance of such sensing systems has also been controversial. For example, the sensitivity of singularity-based sensing systems is not high enough; their capacitance measurements only reach the picofarad (pF) level, and their correlation accuracy is only three orders of magnitude. The low SNR of singularity-based sensing systems reduces the overall performance of the sensing system, manifesting primarily as lower accuracy and poor interference resistance.

[0043] Furthermore, sensing systems employing sensor amplification matrices manufactured using Complementary Metal-Oxide-Semiconductor (CMOS) technology also have several shortcomings. For example, sensor amplification matrices are expensive. Due to their multi-stage amplification characteristics and power consumption requirements, they always require the latest semiconductor processes, significantly increasing their cost. For example, the detection range of sensor amplification matrices is limited. Based on their fully integrated design, a single sensing system can only detect a specific physical quantity. For example, the measurement range of sensor amplification matrices is small. Although their accuracy is extremely high, they are only suitable for detecting weak signals and struggle to properly identify conventional signals.

[0044] Based on this, the present disclosure provides a non-Hermitian quantum sensing circuit and sensing system, which not only has a wider range of detectable physical quantities, but also achieves a further exponential improvement in sensitivity, while effectively solving the problem of unstable signal-to-noise ratio caused by the increase in sensitivity.

[0045] Referring to Figure 1 Some embodiments of the present disclosure provide a non-Hermitian quantum sensing circuit, comprising: at least one sensing unit; the sensing unit comprises: an input end V 输入 , an output end V 输出 , and an N-dimensional N-order quantum system cascaded between the input end V 输入 and the output end V 输出 ; wherein N is a positive integer greater than or equal to 2; the N-dimensional N-order quantum system is used to form a topological adiabatic effect quantum state between the input end V 输入 and the output end V 输出 to receive an external disturbance signal.

[0046] Here, the adiabatic effect refers to the fact that the system state distribution in the non-Hermitian (non-reciprocal) quantum system will shift in a certain direction; correspondingly, it can be manifested as an exponential voltage drop on the non-Hermitian quantum sensing circuit provided by the embodiments of the present disclosure.

[0047] In some embodiments of the present disclosure, the N-dimensional N-order quantum system comprises an N-dimensional cascade of 2 raised to the power of N followers. That is, the N-dimensional N-order quantum system can be implemented by cascading 2 raised to the power of N followers in N dimensions.

[0048] In some embodiments of the present disclosure, a two-dimensional second-order quantum system with N=2 is used as an example to introduce the quantum system of the non-Hermitian quantum sensing circuit. However, it can be understood that the N-dimensional N-order quantum system can be implemented in N dimensions by referring to the two-dimensional second-order quantum system.

[0049] Referring to Figure 2 , the two-dimensional second-order quantum system comprises four circuit nodes and four followers.

[0050] The four circuit nodes comprise a first circuit node a, a second circuit node b, a third circuit node c, and a fourth circuit node d; wherein the first circuit node is connected to the input end V 输入 , the fourth circuit node d is connected to the output end V 输出 , and the second circuit node b and the third circuit node c are respectively connected to ground through an inductor L and a capacitor C1.

[0051] The four followers comprise a first follower, a second follower, a third follower, and a fourth follower; wherein the first follower is connected in series between the first circuit node a and the second circuit node b, the second follower is connected in series between the second circuit node b and the fourth circuit node d, the third follower is connected in series between the first circuit node a and the third circuit node c, and the fourth follower is connected in series between the third circuit node c and the fourth circuit node d.

[0052] For example, the input end V 输入 is a voltage input end, and the output end V输出 is a voltage output terminal. The follower is a voltage follower, which can realize a voltage following function and has high load capacity. By providing an external disturbance signal between the input terminal V 输入 and the output terminal V 输出 , high-sensitivity detection can be realized.

[0053] Please continue to refer to Figure 2 In some embodiments of the present disclosure, any follower is further connected in series with a corresponding connection node away from the side of the input terminal V 输入 .

[0054] In the two-dimensional second-order quantum system provided by the embodiments of the present disclosure, four circuit nodes (a / b / c / d) are directly cascaded using followers (especially high-load voltage followers), which can form a stable skin-effect state between the input terminal V 输入 and the output terminal V 输出 . Moreover, the non-Hermitian quantum sensing circuit provided by the embodiments of the present disclosure is a non-reciprocal coupling circuit. In the two-dimensional second-order quantum system, the non-reciprocal coupling of the follower and the non-Hermitian quantum sensing circuit is consistent, that is, the impedance between two connected circuit nodes is not equal in different transmission directions. For example, when the input terminal of the follower is set to be forward, the impedance between the first circuit node a and the second circuit node b is a dry circuit capacitance value in the transmission from the first circuit node a to the second circuit node b; conversely, the impedance between the first circuit node a and the second circuit node b is positive infinity in the transmission from the second circuit node b to the first circuit node a.

[0055] Here, non-reciprocity is a physical concept that describes a property of certain physical systems or phenomena under certain conditions, that is, the motion behavior along a certain direction is different from the motion behavior along the opposite direction.

[0056] Please continue to refer to Figure 2 In some embodiments of the present disclosure, there is a common constraint LxC1 between the inductor L and the capacitor C1; the common constraint LxC1 is less than the upper limit of the voltage bandwidth of the follower.

[0057] For example, the capacitance value of the capacitor C1 is greater than or equal to 1 pF, for example, can be 1 pF, 3 pF, 5 pF or 10 pF, etc.

[0058] For example, the follower includes a power amplifier Amp. The voltage following bandwidth of the power amplifier Amp is greater than or equal to 10 GHz, for example, can be 10 GHz, 20 GHz or 50 GHz, etc.

[0059] For example, as Figure 2As shown, the follower also includes an RC series circuit connected to the positive and negative input terminals of the power amplifier Amp, respectively. The RC series circuit includes a resistor R and a capacitor C0 connected in series, wherein the first end of the resistor R is connected to the power amplifier Amp, the second end of the resistor R is connected to the first terminal of the capacitor C0, and the second terminal of the capacitor C0 is grounded.

[0060] It is understood that the voltage follower bandwidth of the power amplifier Amp in this disclosure is limited to greater than or equal to 10 GHz, which easily ensures that the follower in the non-Hermitian quantum sensing circuit has extremely strong load-driving capability. Furthermore, optionally, in the non-Hermitian quantum sensing circuit fabricated using a 65-nanometer complementary metal-oxide-semiconductor (CMOS) process, its power consumption is only on the order of mW; that is, it has very low power consumption. This disclosure does not limit the fabrication process of the non-Hermitian quantum sensing circuit, and it can be fabricated using any circuit manufacturing process.

[0061] Furthermore, the power amplifier Amp can be configured to meet specific requirements. This disclosure does not limit the structure of the power amplifier Amp, but only to the extent that the aforementioned voltage following bandwidth can be achieved. Figure 3 A schematic diagram of the core circuit structure of a power amplifier (Amp) is provided. Figure 3 As shown, the power amplifier Amp can, for example, employ multiple nanotransistors (e.g., transistor M). 1N M 1P M 2N M 2P The components (M1, M2, M3, M4, etc.) are connected in series and parallel with the control switch to act as a load. Variable resistors (e.g., R0, R1, etc.) and voltage-stabilizing capacitors (e.g., C0, C1, etc.) can be added accordingly to control the parameters of the power amplifier Amp and stabilize the system. This disclosure does not limit the number of components inside the power amplifier Amp or their connection relationships, but only to the extent that the required functions can be achieved.

[0062] Please see Figure 4 In some embodiments of this disclosure, the non-Hermitian quantum sensing circuit contains multiple sensing units; these multiple sensing units are connected sequentially end-to-end; the output of the previous stage sensing unit serves as the input of the next stage sensing unit. Thus, by connecting multiple sensing units sequentially end-to-end, the embodiments of this disclosure can perform multiplicative superposition of sensitivity, thereby achieving an exponential increase in sensitivity.

[0063] Figure 4 The diagram illustrates the connection of 12 sensing units as an example; sensing units 1 through 12 are connected sequentially, forming 13 nodes. For this non-Hermitian quantum sensing circuit, external disturbance signals can be input to the input terminal V. 输入 and output terminal V 输出between, for example Figure 4 between node 1~node 13 in

[0064] For example, the external disturbance signal is a disturbance capacitor C Γ For example, the non-Hermitian quantum sensing circuit has 12 sensing units as above, the capacitor C1 is set to 5pF, the working frequency is 1.59GHz, the inductance L is 1nH, and the 65nm complementary metal oxide semiconductor process is used to obtain a capacitor sensor with a measurement range of 10E -8 pF to 10E 4 pF. However, the application of the non-Hermitian quantum sensing circuit is not limited to this.

[0065] For example, the non-Hermitian quantum sensing circuit provided by the embodiments of the present disclosure can be applied to the field of precision sensing and the field of quantum state application; wherein, the field of precision sensing includes but is not limited to the sensing implementation in the direction of capacitance, light intensity, chemistry, biology, etc., and the quantum state application mainly involves the construction of non-Hermitian quantum state and related sensing applications.

[0066] From the above, in the non-Hermitian quantum sensing circuit provided by the embodiments of the present disclosure, the number of sensing units is related to the measurement range and the measurement sensitivity, and the parameters of the remaining devices (such as inductance L and capacitor C1) in the non-Hermitian quantum sensing circuit also have a further influence on the measurement range and the measurement sensitivity of the non-Hermitian quantum sensing circuit. Therefore, some embodiments of the present disclosure also provide a sensing system, which includes the non-Hermitian quantum sensing circuit as described in any of the above embodiments, and a control chip connected with the non-Hermitian quantum sensing circuit. The control chip is configured to provide a connection control signal of the sensing unit to the non-Hermitian quantum sensing circuit.

[0067] Figure 5 A circuit structure diagram of a control chip is schematically provided. Please refer to Figure 5 The control chip Chip of the sensing system at least includes a power supply module (Source) and an internal control module (CONTROL MODULE) to drive the sensing system based on the power supply module (Source) and the internal control module (CONTROL MODULE); wherein, the power supply module (Source) is mainly responsible for supplying power for active devices (such as power amplifiers) to make them work in the linear interval; the internal control module (CONTROL MODULE) can be connected with the external control chip through signals, and is responsible for delivering commands for adjustable devices in the sensing system, such as delivering bandwidth adjustment commands of the power amplifier. And the control chip Chip has module interfaces corresponding thereto, including a power supply interface Port E, a switch control interface SW, and control zero interfaces Port A to Port D.

[0068] In some embodiments of this disclosure, the external control chip includes a Field Programmable Gate Array (FPGA) control chip; that is, the FPGA can be integrated and controlled on a chip.

[0069] In this embodiment of the disclosure, the connection status of each sensing unit in the non-Hermitian quantum sensing circuit can be controlled by the connection provided by the control chip. For example, it can be controlled by... Figure 5 The switches SW shown are used for control. Units 1 through 6 are exemplary representations of each sensing unit. The sensing system provided in this embodiment can be adapted to any capacitive front-end, such as a photosensor or a thermistor, as long as the relevant front-end is connected to... Figure 5 C VM The location alone can achieve the corresponding function.

[0070] Please combine Figure 5 and Figure 6 Understandably, the serial port interface of a Field-Programmable Gate Array (FPGA) can, for example, use... Figure 6 The format shown is suitable for controlling four switches (SW) and sensor circuits operating at frequencies above 1GHz. SPI is the serial interface, and SCS, CLK, SDI, and SDO correspond to the master control interface, clock signal interface, input interface, and output interface in the serial channel, respectively. Furthermore, the timing control signals for each interface (SPI, SCS, CLK, SDI, and SDO) during sensor system read / write operations are as follows: Figure 6 As shown in the image.

[0071] As described above, by controlling the non-Hermitian quantum sensing circuit through the control chip, the non-Hermitian quantum sensing circuit can adjust its measurement range and measurement sensitivity in real time, and can use the relevant circuit to perform measurements under any circumstances and requirements.

[0072] In some embodiments of this disclosure, the application of the sensing system in a capacitive sensor is used as an example to perform performance tests, and the test curves are as follows: Figures 7-9 As shown in the figure. Among them, Figure 7 This illustrates the relationship between sensitivity and the number of elements in a sensing system, based on... Figure 7 It can be seen that as the number of sensing units increases, the measurement sensitivity of the sensing system can be improved exponentially. Figure 8 This illustrates the relationship between sensitivity and coupling strength in a sensing system, based on... Figure 8 It can be seen that as the coupling strength of the sensing system increases, the measurement sensitivity of the sensing system can be improved exponentially. Figure 9 This illustrates the correspondence between range and coupling strength in a sensing system, based on... Figure 9It can be seen that as the coupling strength of the sensing system increases, the range of the sensing system can be arbitrarily changed, for example, the capacitance value distribution of the to-be-measured capacitor can be more extensive, so as to ensure that the sensing system can have a wider use scenario, thereby being able to quickly and accurately measure weak signals or normal signals.

[0073] Meanwhile, the signal-to-noise ratio of the sensing system at different frequencies is tested in some embodiments of the present disclosure, and a test curve is obtained as shown in Figure 10 Figure 10 The noise amplitude of the sensing system when the signal strength is 1 is shown in Figure 10 It can be seen that when the frequency is at the valley value, the sensing system is in the reading stage, and the absolute value of the signal-to-noise ratio of the sensing system can be higher than 80 dB, that is, the signal-to-noise ratio performance is better.

[0074] In addition, it needs to be emphasized that the non-Hermitian quantum sensing circuit and the sensing system provided by the embodiments of the present disclosure can also be externally connected to the disturbance of any physical quantity in addition to the application of capacitance sensing. Moreover, the non-Hermitian quantum sensing circuit can be expanded to a 16-follower structure for 4-dimensional cascading to form a 4-dimensional 4-order quantum sensing system by using an audio circuit board process.

[0075] Please refer to Figure 11 The present disclosure further provides an application of the sensing system in the field of laser detection. The embodiments of the present disclosure can use a fixed-frequency or variable-frequency laser to form a stable light path, so that the light path first passes through a to-be-measured liquid contained in a fully transparent glass box 1 (the glass thickness includes but is not limited to 2 mm), and then the laser is incident on an integrated photosensitive capacitor array 3 connected to the non-Hermitian quantum sensing circuit 4 provided by the embodiments of the present disclosure.

[0076] The performance of the sensing system in the field of laser detection is tested by taking the above-mentioned sensing system as an example, and each detection report is obtained as shown in Figure 12 and Figure 13 Through the scheme, the spectral characteristics of the to-be-measured substance can be obtained very accurately. For example, Figure 12 shows a detection report of iron ions, Figure 13 shows a detection report of copper ions, according to Figure 12 and Figure 13 It can be seen that at very low ion concentration, the non-Hermitian quantum sensing circuit and the sensing system can still accurately perform related measurement. ​

[0077] In summary, the non-Hermitian quantum sensing circuit and sensing system provided by the embodiments of the present disclosure have the following advantages:

[0078] 1. The scheme has extremely high sensitivity, and can achieve single-electron-level sensitivity for a capacitive front-end.

[0079] 2. The scheme has a high signal-to-noise ratio, and the non-Hermitian quantum sensing circuit uses a high-order topology to greatly improve the stability and anti-interference ability of the system.

[0080] 3. The scheme is suitable for any electronic production technology, whether it is a printed circuit board (PCB) or a semiconductor process (such as a complementary metal-oxide-semiconductor, CMOS).

[0081] 4. The scheme can be adapted to any capacitive, inductive, and resistive front-end, and can be applied in optical, biological, chemical, and other detection fields.

[0082] As can be seen, compared with the previous sensing method, the sensitivity of the non-Hermitian quantum sensing circuit and sensing system provided by the embodiments of the present disclosure is greatly improved (exponential), and the circuit stability of the non-Hermitian quantum sensing circuit and sensing system is greatly improved, and the signal-to-noise ratio can be stabilized at more than 80dB in any environment.

[0083] Further, the non-Hermitian quantum sensing circuit and sensing system provided by the embodiments of the present disclosure can not be limited to high-precision preparation due to its stability; that is, even if a low-precision preparation process is used, the non-Hermitian quantum sensing circuit and sensing system can still surpass the previous sensing method to a certain extent.

[0084] Further, the non-Hermitian quantum sensing circuit and sensing system provided by the embodiments of the present disclosure has strong expansibility, and whether it is a capacitor or an optical or even a chemical substance, the front-end can be accessed, and the access method is very convenient.

[0085] The technical features of the above-described embodiments can be combined in any manner. To make the description concise, not all possible combinations of the technical features of the above-described embodiments are described, but it should be considered that any combination of these technical features is within the scope of the present disclosure.

[0086] The above-described embodiments only express several implementation manners of the present disclosure, and the description is relatively specific and detailed, but it should not be considered as a limitation on the patent scope. It should be noted that for ordinary skilled persons in the art, without departing from the concept of the present disclosure, a number of modifications and improvements can be made, which are within the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure should be subject to the appended claims.

Claims

1. A non-Hermitian quantum sensing circuit, comprising: The application relates to a non-hermitian quantum sensing circuit. The sensing unit comprises an input end, an output end and an N-dimensional N-order quantum system connected between the input end and the output end; the N-dimensional N-order quantum system is used for forming a topological adiabatic effect quantum state between the input end and the output end to receive an external disturbance signal. Wherein, N is 2, and the two-dimensional two-order quantum system comprises: Four circuit nodes, including a first circuit node, a second circuit node, a third circuit node and a fourth circuit node; wherein the first circuit node is connected to the input end, the fourth circuit node is connected to the output end, and the second circuit node and the third circuit node are connected to the ground through an inductor L and a capacitor C1 respectively; Four followers, including a first follower, a second follower, a third follower and a fourth follower; wherein the first follower is connected in series between the first circuit node and the second circuit node, the second follower is connected in series between the second circuit node and the fourth circuit node, the third follower is connected in series between the first circuit node and the third circuit node, and the fourth follower is connected in series between the third circuit node and the fourth circuit node. There is a common constraint LxC1 between the inductor L and the capacitor C1; the common constraint LxC1 is smaller than the upper limit of the voltage bandwidth of the follower.

2. The non-Hermitian quantum sensing circuit of claim 1, wherein, The capacitance value of the capacitor C1 is greater than or equal to 1 pF.

3. The non-Hermitian quantum sensing circuit of claim 2, wherein, The follower comprises a power amplifier; the voltage following bandwidth of the power amplifier is greater than or equal to 10 GHz.

4. The non-Hermitian quantum sensing circuit of claim 1, wherein, Any one of the followers is further connected in series with a corresponding connection node on the side away from the input end.

5. The non-Hermitian quantum sensing circuit of claim 1, wherein, The number of the sensing units is multiple; wherein, 6. The non-Hermitian quantum sensing circuit of claim 1, wherein, The multiple sensing units are connected in sequence; The output end of a previous sensing unit is the input end of a subsequent sensing unit. The application relates to a non-hermitian quantum sensing circuit.

7. A sensing system characterized by, The control chip is connected with the non-hermitian quantum sensing circuit and is configured to provide a connection control signal of the sensing unit to the non-hermitian quantum sensing circuit. The control chip comprises a field programmable logic gate array control chip. ​ 8. The sensing system of claim 7, wherein, ​

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