Gallium oxide crystal growth evaluation system and method based on performance analysis

Abstract

The invention discloses a gallium oxide crystal growth evaluation system and method based on performance analysis, and belongs to the field of general control systems. The invention imports the performance data of the gallium oxide crystal obtained during the growth process into a growth performance evaluation model to perform growth performance evaluation, imports the single crystal furnace data of the gallium oxide crystal obtained during the growth process into a growth process scenario evaluation model to perform growth scenario adaptation evaluation, comprehensively analyzes the growth performance evaluation result and the growth scenario adaptation evaluation result to obtain the gallium oxide growth evaluation result, performs growth evaluation early warning according to the obtained gallium oxide growth evaluation result, comprehensively analyzes the growth performance data and the growth environment data during the growth of the gallium oxide crystal, accurately evaluates the gallium oxide growth process, and then accurately estimates the quality of the gallium oxide after growth, thereby improving the accuracy and evaluation efficiency of the gallium oxide crystal growth evaluation.

Description

Technical Field

[0001] The present invention belongs to the general field of control systems, and more specifically to a gallium oxide crystal growth evaluation system and method based on performance analysis. Background Art

[0002] Gallium oxide (Ga2O3) is a wide bandgap semiconductor material with high thermal stability and electrical conductivity. Its main application areas include high-temperature power electronic devices, optoelectronic devices and sensors. The physical and chemical properties of gallium oxide make it one of the most attractive materials in these fields. Although gallium oxide has many excellent properties, its growth and processing still face some challenges, such as the technical difficulty of growing large-size single crystals, cost control, and improving the stability and efficiency of devices. With the advancement of technology and in-depth research, these challenges are gradually being overcome;

[0003] In the process of evaluating the growth of gallium oxide crystals, the prior art is unable to comprehensively analyze the growth performance data and growth environment data of the gallium oxide crystals during the growth process, and is unable to accurately evaluate the gallium oxide growth process, and further is unable to accurately estimate the quality of gallium oxide after growth, resulting in reduced accuracy and efficiency of the evaluation of gallium oxide crystal growth. The prior art has the above problems;

[0004] For example, a Chinese patent with publication number CN113130017B discloses a crystal growth analysis method and system based on artificial intelligence. It specifically relates to the field of crystal growth, especially the field of silicon carbide crystal growth. The invention is mainly divided into three parts: experiment, simulation, and artificial intelligence. Experiment is the most reliable source of data, and it is also an effective method to verify artificial intelligence analysis and simulation analysis; simulation is a supplement to experimental data, and it is also an important auxiliary method for analyzing crystal growth; artificial intelligence is mainly used to extract characteristic data from parameters and analyze and evaluate, and define the method of crystal growth range. This is conducive to building a method for analyzing, evaluating, assessing, and verifying crystal growth conditions, and can also define crystal growth boundary conditions;

[0005] The above patents all have the problem raised by this background technology: in the process of evaluating the growth of gallium oxide crystals, the existing technology is unable to comprehensively analyze the growth performance data and growth environment data of the gallium oxide crystals during the growth process, and is unable to accurately evaluate the gallium oxide growth process, and thus is unable to accurately predict the quality of gallium oxide after growth, resulting in reduced accuracy and evaluation efficiency of the gallium oxide crystal growth evaluation. In order to solve these problems, this application designs a gallium oxide crystal growth evaluation system and method based on performance analysis. Summary of the invention

[0006] In view of the deficiencies in the prior art, the present invention proposes a gallium oxide crystal growth evaluation system and method based on performance analysis.

[0007] To achieve the above object, the present invention provides the following technical solution: a gallium oxide crystal growth evaluation method based on performance analysis, which comprises the following specific steps:

[0008] Obtaining performance data of gallium oxide crystals during growth, and obtaining single crystal furnace data during growth;

[0009] Importing the acquired performance data of the gallium oxide crystal during the growth process into a growth performance evaluation model to perform growth performance evaluation;

[0010] Obtain the single crystal furnace data of gallium oxide crystals during the growth process and import it into the growth process scenario assessment model to conduct growth scenario adaptation assessment;

[0011] Comprehensively analyze the growth performance evaluation results and the growth scenario adaptation evaluation results to obtain the gallium oxide growth evaluation results;

[0012] A growth assessment warning is performed based on the obtained gallium oxide growth assessment results.

[0013] It should be noted that the specific steps of obtaining the performance data of the gallium oxide crystal during the growth process and simultaneously obtaining the single crystal furnace data during the growth process are:

[0014] S11, during the growth process of the gallium oxide crystal, periodically obtaining carrier concentration and carrier mobility data at each position of the gallium oxide crystal through a sensor, and simultaneously obtaining corresponding growth time, and storing them in a first storage module;

[0015] S12, acquiring an image of the surface of the gallium oxide crystal through a sensor, and acquiring bottom area and height data of pits and protrusions on the surface of the gallium oxide crystal, and storing them in a second storage module;

[0016] S13. Acquire single crystal furnace data during the growth process through sensors, wherein the single crystal furnace data includes single crystal furnace temperature and gas concentration data, and are stored in a third storage module.

[0017] It should be specifically explained here that the step of importing the acquired performance data of the gallium oxide crystal during the growth process into the growth performance evaluation model to perform growth performance evaluation includes the following specific steps:

[0018] S21, obtaining bottom area and height data of pits and protrusions on the surface of the gallium oxide crystal, and importing the bottom area and height data of the pits and protrusions on the surface of the gallium oxide crystal into a calculation formula for the surface anomaly coefficient of gallium oxide to calculate the surface anomaly coefficient of gallium oxide, wherein the calculation formula for the surface anomaly coefficient of gallium oxide is: , where n is the total number of pits and protrusions on the surface of the gallium oxide crystal, mi is the bottom area of ​​the ith pit or protrusion on the surface of the gallium oxide crystal, si is the height of the ith pit or protrusion on the surface of the gallium oxide crystal, mc is the maximum value of the safe bottom area range of the pit or protrusion on the surface of the gallium oxide crystal, and sc is the maximum value of the safe height range of the pit or protrusion on the surface of the gallium oxide crystal;

[0019] 22. Obtain carrier concentration and carrier mobility data at each position of the gallium oxide crystal, and import the obtained carrier concentration and carrier mobility data at each position of the gallium oxide crystal into a crystal electrical performance anomaly coefficient calculation formula to calculate the crystal electrical performance anomaly coefficient, wherein the crystal electrical performance anomaly coefficient calculation formula is: , where exp() is the power of e, M is the number of acquisition positions, a1 is the carrier concentration ratio, a2 is the carrier mobility ratio, cj is the carrier concentration at the jth position of the crystal, vj is the carrier mobility at the jth position of the crystal, cm is the median of the current carrier concentration safety range of the crystal, vm is the median of the current carrier mobility safety range of the crystal, cmax is the maximum value of the current carrier concentration safety range of the crystal, cmin is the minimum value of the current carrier concentration safety range of the crystal, vmax is the maximum value of the current carrier mobility safety range of the crystal, and vmin is the minimum value of the current carrier mobility safety range of the crystal.

[0020] It should be noted that the step of importing the acquired performance data of the gallium oxide crystal during the growth process into the growth performance evaluation model for growth performance evaluation also includes the following specific steps:

[0021] S23, obtaining the calculated real-time gallium oxide surface anomaly coefficient and crystal electrical performance anomaly coefficient, and simultaneously obtaining growth time data and total growth duration data;

[0022] S24, substituting the obtained real-time gallium oxide surface abnormal coefficient, crystal electrical performance abnormal coefficient, growth time data and total growth time data into the growth performance evaluation value calculation formula to calculate the growth performance evaluation value, wherein the growth performance evaluation value calculation formula is: , where T is the total growth time, t is the growth time, and b is the ratio of the surface anomaly coefficient of gallium oxide.

[0023] It should be noted here that the acquisition of the single crystal furnace data of the gallium oxide crystal during the growth process and importing it into the growth process scenario evaluation model for the growth scenario adaptation evaluation includes the following specific steps: obtaining the single crystal furnace temperature and the various gas concentration data in the single crystal furnace, substituting the single crystal furnace temperature and the various gas concentration data in the single crystal furnace into the growth process scenario evaluation coefficient calculation formula to calculate the growth process scenario evaluation coefficient, wherein the growth process scenario evaluation coefficient calculation formula is: , where Ts is the real-time single crystal furnace temperature, Tm is the median of the single crystal furnace temperature safety range, Tmax is the maximum value of the single crystal furnace temperature safety range, Tmin is the minimum value of the single crystal furnace temperature safety range, Z is the gas type, Jz is the proportion coefficient of the zth gas, czs is the concentration of the zth gas, czm is the median of the zth gas concentration safety range, czmax is the maximum value of the zth gas concentration safety range, and czmin is the minimum value of the zth gas concentration safety range.

[0024] It should be specifically noted that, based on a comprehensive analysis of the growth performance evaluation results and the growth scenario adaptation evaluation results, the specific contents of the gallium oxide growth evaluation results are as follows:

[0025] Obtain the calculated growth performance evaluation value and growth process scenario evaluation coefficient and substitute them into the gallium oxide growth evaluation value calculation formula to calculate the gallium oxide growth evaluation value, wherein the gallium oxide growth evaluation value calculation formula is: , where g is the growth performance evaluation value ratio coefficient; the calculated gallium oxide growth evaluation value is compared with the set gallium oxide growth evaluation threshold. If the gallium oxide growth evaluation value is less than the set gallium oxide growth evaluation threshold, the gallium oxide growth evaluation result is judged to be unqualified, and the maintenance personnel are reminded to maintain the growth process and issue an early warning; if the gallium oxide growth evaluation value is greater than or equal to the set gallium oxide growth evaluation threshold, the gallium oxide growth evaluation result is judged to be normal growth.

[0026] It should be noted here that the carrier concentration ratio coefficient, carrier mobility ratio coefficient, gallium oxide surface anomaly coefficient ratio coefficient, z-th gas ratio coefficient, growth performance evaluation value ratio coefficient and gallium oxide growth evaluation threshold in the present application are obtained as follows: at least 5000 sets of performance data of gallium oxide crystals during the growth process and single crystal furnace data during the growth process are obtained, and the performance data of gallium oxide crystals during the growth process and the single crystal furnace data during the growth process are substituted into the gallium oxide growth evaluation value calculation formula to calculate the gallium oxide growth evaluation value, and at the same time, the qualified judgment results of the gallium oxide crystal production corresponding to these data are obtained, and the calculated gallium oxide growth evaluation value and the qualified judgment result are substituted into the fitting software, and the carrier concentration ratio coefficient, carrier mobility ratio coefficient, gallium oxide surface anomaly coefficient ratio coefficient, z-th gas ratio coefficient, growth performance evaluation value ratio coefficient and gallium oxide growth evaluation threshold that meet the highest judgment accuracy are output.

[0027] A gallium oxide crystal growth evaluation system based on performance analysis, which is implemented based on the above-mentioned gallium oxide crystal growth evaluation method based on performance analysis, and specifically includes a data acquisition module, a growth performance evaluation module, a growth scenario adaptation evaluation module, a growth evaluation result analysis module, a growth evaluation early warning module and a general control module, wherein the data acquisition module is used to obtain the performance data of the gallium oxide crystal during the growth process, and simultaneously obtain the single crystal furnace data during the growth process;

[0028] The growth performance evaluation module is used to import the acquired performance data of the gallium oxide crystal during the growth process into the growth performance evaluation model to perform growth performance evaluation;

[0029] The growth scenario adaptation assessment module is used to obtain single crystal furnace data of gallium oxide crystals during the growth process and import it into the growth process scenario assessment model to perform growth scenario adaptation assessment;

[0030] The growth evaluation result analysis module is used to comprehensively analyze the growth performance evaluation result and the growth scenario adaptation evaluation result to obtain the gallium oxide growth evaluation result;

[0031] The growth assessment and early warning module is used to perform growth assessment and early warning according to the obtained gallium oxide growth assessment result;

[0032] The general control module is used to control the data acquisition module, the growth performance evaluation module, the growth scenario adaptation evaluation module, the growth evaluation result analysis module and the growth evaluation early warning module.

[0033] An electronic device comprises: a processor and a memory, wherein the memory stores a computer program that can be called by the processor;

[0034] The processor executes the above-mentioned gallium oxide crystal growth evaluation method based on performance analysis by calling the computer program stored in the memory.

[0035] A computer-readable storage medium stores instructions, which, when executed on a computer, enable the computer to execute the above-mentioned gallium oxide crystal growth evaluation method based on performance analysis.

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] The present invention obtains performance data of a gallium oxide crystal during a growth process, and simultaneously obtains single crystal furnace data during the growth process, imports the obtained performance data of the gallium oxide crystal during the growth process into a growth performance evaluation model to perform growth performance evaluation, obtains single crystal furnace data of the gallium oxide crystal during the growth process and imports it into a growth process scenario evaluation model to perform growth scenario adaptation evaluation, comprehensively analyzes the growth performance evaluation result and the growth scenario adaptation evaluation result to obtain a gallium oxide growth evaluation result, performs growth evaluation early warning according to the obtained gallium oxide growth evaluation result, comprehensively analyzes the growth performance data and growth environment data during the growth process of the gallium oxide crystal, accurately evaluates the gallium oxide growth process, and then accurately estimates the quality of the gallium oxide after growth, thereby improving the accuracy and evaluation efficiency of the gallium oxide crystal growth evaluation. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 It is a schematic diagram of the overall process of the gallium oxide crystal growth evaluation method based on performance analysis of the present invention;

[0039] Figure 2 It is a schematic diagram of step S2 of the gallium oxide crystal growth evaluation system based on performance analysis of the present invention;

[0040] Figure 3 It is a schematic diagram of the overall framework of the gallium oxide crystal growth evaluation system based on performance analysis of the present invention. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0042] Example 1

[0043] The technical problem solved by this embodiment is that in the process of evaluating the growth of gallium oxide crystals, the prior art is unable to comprehensively analyze the growth performance data and growth environment data of the gallium oxide crystals during the growth process, and is unable to accurately evaluate the gallium oxide growth process, and further is unable to accurately estimate the quality of the gallium oxide after growth, resulting in reduced accuracy and efficiency of the evaluation of the gallium oxide crystal growth;

[0044] In order to solve the above problems, the present invention provides a preferred embodiment: Figure 1 As shown, the gallium oxide crystal growth evaluation method based on performance analysis includes the following specific steps:

[0045] S1. Acquire the performance data of the gallium oxide crystal during the growth process, and simultaneously acquire the single crystal furnace data during the growth process;

[0046] S2, importing the performance data of the gallium oxide crystal obtained during the growth process into a growth performance evaluation model to perform growth performance evaluation;

[0047] S3, obtaining single crystal furnace data of gallium oxide crystals during the growth process and importing it into a growth process scenario assessment model to perform growth scenario adaptation assessment;

[0048] S4. Comprehensively analyzing the growth performance evaluation results and the growth scenario adaptation evaluation results to obtain a gallium oxide growth evaluation result;

[0049] S5. Perform growth assessment warning according to the obtained gallium oxide growth assessment result.

[0050] In a specific embodiment, S1 includes the following specific steps: obtaining the performance data of the gallium oxide crystal during the growth process, and the specific steps of obtaining the single crystal furnace data during the growth process are:

[0051] S11, during the growth process of the gallium oxide crystal, periodically obtaining carrier concentration and carrier mobility data at each position of the gallium oxide crystal through a sensor, and simultaneously obtaining corresponding growth time, and storing them in a first storage module;

[0052] During the growth of gallium oxide crystals, the steps of regularly acquiring carrier concentration and mobility data at each position of the crystal can be divided into the following main parts:

[0053] 1. Equipment preparation:

[0054] Ensure that you have a Hall Effect meter or other suitable electrical measurement equipment installed and prepare the sensors to ensure they can accurately measure carrier concentration and mobility.

[0055] 2. Sensor positioning:

[0056] During the crystal growth process, the sensor needs to be accurately placed at the location where the carrier concentration and mobility need to be measured; the sensor should be able to cover the areas that need to be paid attention to during the crystal growth process, such as the crystal surface, interior, etc.

[0057] 3. Timing measurement:

[0058] According to the crystal growth schedule, set the measurement cycle. For example, take a measurement every 10 minutes, every 20 minutes, or longer; at the end of each measurement cycle, start the sensor to acquire data.

[0059] It should be noted that the design and selection of sensors should ensure that they can work stably in the high temperature and high humidity growth environment and provide accurate measurement results. In addition, the data acquisition and analysis system also needs to be able to withstand the extreme conditions in the growth environment;

[0060] During the growth of semiconductor crystals, it is crucial to obtain carrier concentration and mobility data at various locations of the crystal at regular intervals for analyzing and evaluating the electrical properties of the crystal. Analyze the trend of carrier concentration changes over time and position to evaluate the doping level and crystal uniformity, compare the carrier concentrations in different regions to identify possible defects or impurity regions, and analyze the trend of mobility changes over time and position to evaluate the electrical conductivity and quality of the crystal. Changes in mobility may indicate the presence of scattering centers such as impurities, defects, or stress inside the crystal. Combine carrier concentration and mobility data for a comprehensive evaluation to fully understand the electrical properties of the crystal, and analyze the relationship between carrier concentration and mobility to infer the impact of crystal growth conditions and processes on electrical properties.

[0061] S12, acquiring an image of the surface of the gallium oxide crystal through a sensor, and acquiring bottom area and height data of pits and protrusions on the surface of the gallium oxide crystal, and storing them in a second storage module;

[0062] S13, acquiring single crystal furnace data during the growth process through a sensor, wherein the single crystal furnace data includes single crystal furnace temperature and gas concentration data, and storing the data in a third storage module;

[0063] In a specific embodiment, Figure 2 As shown, S2 includes the following specific steps: S21, obtaining the bottom area and height data of the pits and protrusions on the surface of the gallium oxide crystal, and importing the bottom area and height data of the pits and protrusions on the surface of the gallium oxide crystal into the calculation formula of the surface anomaly coefficient of the gallium oxide to calculate the surface anomaly coefficient of the gallium oxide, wherein the calculation formula of the surface anomaly coefficient of the gallium oxide is: , where n is the total number of pits and protrusions on the surface of the gallium oxide crystal, mi is the bottom area of ​​the ith pit or protrusion on the surface of the gallium oxide crystal, si is the height of the ith pit or protrusion on the surface of the gallium oxide crystal, mc is the maximum value of the safe bottom area range of the pit or protrusion on the surface of the gallium oxide crystal, and sc is the maximum value of the safe height range of the pit or protrusion on the surface of the gallium oxide crystal;

[0064] S22, obtaining carrier concentration and carrier mobility data at each position of the gallium oxide crystal, and importing the obtained carrier concentration and carrier mobility data at each position of the gallium oxide crystal into a crystal electrical performance anomaly coefficient calculation formula to calculate the crystal electrical performance anomaly coefficient, wherein the crystal electrical performance anomaly coefficient calculation formula is: , where exp() is the power of e, M is the number of acquisition positions, a1 is the carrier concentration ratio, a2 is the carrier mobility ratio, cj is the carrier concentration at the jth position of the crystal, vj is the carrier mobility at the jth position of the crystal, cm is the median of the current carrier concentration safety range of the crystal, vm is the median of the current carrier mobility safety range of the crystal, cmax is the maximum value of the current carrier concentration safety range of the crystal, cmin is the minimum value of the current carrier concentration safety range of the crystal, vmax is the maximum value of the current carrier mobility safety range of the crystal, and vmin is the minimum value of the current carrier mobility safety range of the crystal;

[0065] S23, obtaining the calculated real-time gallium oxide surface anomaly coefficient and crystal electrical performance anomaly coefficient, and simultaneously obtaining growth time data and total growth duration data;

[0066] S24, substituting the obtained real-time gallium oxide surface abnormal coefficient, crystal electrical performance abnormal coefficient, growth time data and total growth time data into the growth performance evaluation value calculation formula to calculate the growth performance evaluation value, wherein the growth performance evaluation value calculation formula is: , where T is the total growth time, t is the growth time, and b is the ratio of the surface anomaly coefficient of gallium oxide.

[0067] In a specific embodiment, S3 includes the following specific contents: obtaining the temperature of the single crystal furnace and the concentration data of various gases in the single crystal furnace, substituting the temperature of the single crystal furnace and the concentration data of various gases in the single crystal furnace into the growth process scene evaluation coefficient calculation formula to calculate the growth process scene evaluation coefficient, wherein the growth process scene evaluation coefficient calculation formula is: , where Ts is the real-time single crystal furnace temperature, Tm is the median of the single crystal furnace temperature safety range, Tmax is the maximum value of the single crystal furnace temperature safety range, Tmin is the minimum value of the single crystal furnace temperature safety range, Z is the gas type, Jz is the proportion coefficient of the zth gas, czs is the concentration of the zth gas, czm is the median of the zth gas concentration safety range, czmax is the maximum value of the zth gas concentration safety range, and czmin is the minimum value of the zth gas concentration safety range.

[0068] In a specific embodiment, S4 includes the following specific steps: obtaining the calculated growth performance evaluation value and the growth process scenario evaluation coefficient and substituting them into the gallium oxide growth evaluation value calculation formula to calculate the gallium oxide growth evaluation value, wherein the gallium oxide growth evaluation value calculation formula is: , where g is the growth performance evaluation value ratio coefficient; the calculated gallium oxide growth evaluation value is compared with the set gallium oxide growth evaluation threshold. If the gallium oxide growth evaluation value is less than the set gallium oxide growth evaluation threshold, the gallium oxide growth evaluation result is judged to be unqualified, and the maintenance personnel are reminded to maintain the growth process and issue an early warning; if the gallium oxide growth evaluation value is greater than or equal to the set gallium oxide growth evaluation threshold, the gallium oxide growth evaluation result is judged to be normal growth.

[0069] It should be noted here that the carrier concentration ratio coefficient, carrier mobility ratio coefficient, gallium oxide surface anomaly coefficient ratio coefficient, z-th gas ratio coefficient, growth performance evaluation value ratio coefficient and gallium oxide growth evaluation threshold in the present application are obtained as follows: at least 5000 sets of performance data of gallium oxide crystals during the growth process and single crystal furnace data during the growth process are obtained, and the performance data of gallium oxide crystals during the growth process and the single crystal furnace data during the growth process are substituted into the gallium oxide growth evaluation value calculation formula to calculate the gallium oxide growth evaluation value, and at the same time, the qualified judgment results of the gallium oxide crystal production corresponding to these data are obtained, and the calculated gallium oxide growth evaluation value and the qualified judgment result are substituted into the fitting software, and the carrier concentration ratio coefficient, carrier mobility ratio coefficient, gallium oxide surface anomaly coefficient ratio coefficient, z-th gas ratio coefficient, growth performance evaluation value ratio coefficient and gallium oxide growth evaluation threshold that meet the highest judgment accuracy are output.

[0070] It should be noted in the present embodiment that the advantages of the present embodiment over the prior art are as follows: obtaining performance data of the gallium oxide crystal during the growth process, and simultaneously obtaining single crystal furnace data during the growth process, importing the obtained performance data of the gallium oxide crystal during the growth process into the growth performance evaluation model for growth performance evaluation, obtaining single crystal furnace data of the gallium oxide crystal during the growth process and importing it into the growth process scenario evaluation model for growth scenario adaptation evaluation, comprehensively analyzing the growth performance evaluation results and the growth scenario adaptation evaluation results to obtain the gallium oxide growth evaluation results, performing growth evaluation warning based on the obtained gallium oxide growth evaluation results, comprehensively analyzing the growth performance data and growth environment data during the growth of the gallium oxide crystal, accurately evaluating the gallium oxide growth process, and then accurately estimating the quality of the gallium oxide after growth, thereby improving the accuracy and efficiency of the gallium oxide crystal growth evaluation.

[0071] Example 2

[0072] like Figure 3As shown, a gallium oxide crystal growth evaluation system based on performance analysis is implemented based on the above-mentioned gallium oxide crystal growth evaluation method based on performance analysis, and specifically includes a data acquisition module, a growth performance evaluation module, a growth scenario adaptation evaluation module, a growth evaluation result analysis module, a growth evaluation early warning module and a master control module, wherein the data acquisition module is used to obtain the performance data of the gallium oxide crystal during the growth process, and simultaneously obtain the single crystal furnace data during the growth process; the growth performance evaluation module is used to import the acquired performance data of the gallium oxide crystal during the growth process into the growth performance evaluation model for growth performance evaluation; the growth scenario adaptation evaluation module is used to obtain the single crystal furnace data of the gallium oxide crystal during the growth process and import it into the growth process scenario evaluation model for growth scenario adaptation evaluation; the growth evaluation result analysis module is used to comprehensively analyze the growth performance evaluation result and the growth scenario adaptation evaluation result to obtain the gallium oxide growth evaluation result; the growth evaluation early warning module is used to perform growth evaluation early warning according to the obtained gallium oxide growth evaluation result; the master control module is used to control the data acquisition module, the growth performance evaluation module, the growth scenario adaptation evaluation module, the growth evaluation result analysis module and the growth evaluation early warning module.

[0073] Example 3

[0074] This embodiment provides an electronic device, including: a processor and a memory, wherein the memory stores a computer program that can be called by the processor;

[0075] The processor executes the above-mentioned gallium oxide crystal growth evaluation method based on performance analysis by calling the computer program stored in the memory.

[0076] The electronic device may have relatively large differences due to different configurations or performances, and may include one or more processors (Central Processing Units, CPU) and one or more memories, wherein the memory stores at least one computer program, which is loaded and executed by the processor to implement the gallium oxide crystal growth evaluation method based on performance analysis provided by the above method embodiment. The electronic device may also include other components for realizing the functions of the device, for example, the electronic device may also have components such as a wired or wireless network interface and an input and output interface to input and output data. This embodiment will not be described in detail here.

[0077] Example 4

[0078] This embodiment provides a computer-readable storage medium having a rewritable computer program stored thereon;

[0079] When the computer program is executed on a computer device, the computer device is caused to execute the above-mentioned gallium oxide crystal growth evaluation method based on performance analysis.

[0080] For example, the computer readable storage medium can be a read-only memory (ROM), a random access memory (RAM), a compact disc (CD-ROM), a magnetic tape, a floppy disk, an optical data storage device, etc.

[0081] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0082] It should be understood that determining B based on A does not mean determining B only based on A. B can also be determined based on A and / or other information.

[0083] The above embodiments can be implemented in whole or in part by software, hardware, firmware or any other combination. When implemented by software, the above embodiments can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions or computer programs. When a computer instruction or computer program is loaded or executed on a computer, a process or function according to an embodiment of the present invention is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network or other programmable device. Computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, computer instructions can be transmitted from one website site, computer, server or data center to another website site, computer, server or data center through a wired network or / and a wireless network. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that contains one or more available media sets. The available medium can be a magnetic medium (for example, a floppy disk, a hard disk, a tape), an optical medium (for example, a DVD), or a semiconductor medium. The semiconductor medium can be a solid-state hard disk.

Claims

1. A gallium oxide crystal growth evaluation method based on performance analysis, characterized in that: It includes the following specific steps: Obtaining performance data of gallium oxide crystals during growth, and obtaining single crystal furnace data during growth; Importing the acquired performance data of the gallium oxide crystal during the growth process into a growth performance evaluation model to perform growth performance evaluation; Obtain the single crystal furnace data of gallium oxide crystals during the growth process and import it into the growth process scenario assessment model to conduct growth scenario adaptation assessment; Comprehensively analyze the growth performance evaluation results and the growth scenario adaptation evaluation results to obtain the gallium oxide growth evaluation results; Performing growth evaluation warning according to the obtained gallium oxide growth evaluation result; importing the obtained performance data of the gallium oxide crystal in the growth process into the growth performance evaluation model to perform growth performance evaluation includes the following specific steps: S21, obtaining bottom area and height data of pits and protrusions on the surface of the gallium oxide crystal, and importing the bottom area and height data of the pits and protrusions on the surface of the gallium oxide crystal into a calculation formula for the surface anomaly coefficient of gallium oxide to calculate the surface anomaly coefficient of gallium oxide, wherein the calculation formula for the surface anomaly coefficient of gallium oxide is: , where n is the total number of pits and protrusions on the surface of the gallium oxide crystal, mi is the bottom area of ​​the ith pit or protrusion on the surface of the gallium oxide crystal, si is the height of the ith pit or protrusion on the surface of the gallium oxide crystal, mc is the maximum value of the safe bottom area range of the pit or protrusion on the surface of the gallium oxide crystal, and sc is the maximum value of the safe height range of the pit or protrusion on the surface of the gallium oxide crystal; S22, obtaining carrier concentration and carrier mobility data at each position of the gallium oxide crystal, and importing the obtained carrier concentration and carrier mobility data at each position of the gallium oxide crystal into a crystal electrical performance anomaly coefficient calculation formula to calculate the crystal electrical performance anomaly coefficient, wherein the crystal electrical performance anomaly coefficient calculation formula is: , where exp() is the power of e, M is the number of acquisition positions, a1 is the carrier concentration ratio, a2 is the carrier mobility ratio, cj is the carrier concentration at the jth position of the crystal, vj is the carrier mobility at the jth position of the crystal, cm is the median of the current carrier concentration safety range of the crystal, vm is the median of the current carrier mobility safety range of the crystal, cmax is the maximum value of the current carrier concentration safety range of the crystal, cmin is the minimum value of the current carrier concentration safety range of the crystal, vmax is the maximum value of the current carrier mobility safety range of the crystal, and vmin is the minimum value of the current carrier mobility safety range of the crystal; the step of importing the obtained performance data of the gallium oxide crystal in the growth process into the growth performance evaluation model for growth performance evaluation also includes the following specific steps: S23, obtaining the calculated real-time gallium oxide surface anomaly coefficient and crystal electrical performance anomaly coefficient, and simultaneously obtaining growth time data and total growth duration data; S24, substituting the obtained real-time gallium oxide surface abnormal coefficient, crystal electrical performance abnormal coefficient, growth time data and total growth time data into the growth performance evaluation value calculation formula to calculate the growth performance evaluation value, wherein the growth performance evaluation value calculation formula is: , where T is the total growth time, t is the growth time, and b is the ratio of the surface anomaly coefficient of gallium oxide; the single crystal furnace data of the gallium oxide crystal obtained during the growth process is imported into the growth process scenario evaluation model for growth scenario adaptation evaluation, including the following specific steps: obtaining the single crystal furnace temperature and the various gas concentration data in the single crystal furnace, substituting the single crystal furnace temperature and the various gas concentration data in the single crystal furnace into the growth process scenario evaluation coefficient calculation formula to calculate the growth process scenario evaluation coefficient, wherein the growth process scenario evaluation coefficient calculation formula is: , where Ts is the real-time single crystal furnace temperature, Tm is the median of the single crystal furnace temperature safety range, Tmax is the maximum value of the single crystal furnace temperature safety range, Tmin is the minimum value of the single crystal furnace temperature safety range, Z is the gas type, Jz is the proportion coefficient of the z-th gas, czs is the concentration of the z-th gas, czm is the median of the z-th gas concentration safety range, czmax is the maximum value of the z-th gas concentration safety range, and czmin is the minimum value of the z-th gas concentration safety range; based on a comprehensive analysis of the growth performance evaluation results and the growth scenario adaptation evaluation results, the specific content of the gallium oxide growth evaluation results is as follows: Obtain the calculated growth performance evaluation value and growth process scenario evaluation coefficient and substitute them into the gallium oxide growth evaluation value calculation formula to calculate the gallium oxide growth evaluation value, wherein the gallium oxide growth evaluation value calculation formula is: , where g is the growth performance evaluation value ratio coefficient; the calculated gallium oxide growth evaluation value is compared with the set gallium oxide growth evaluation threshold. If the gallium oxide growth evaluation value is less than the set gallium oxide growth evaluation threshold, the gallium oxide growth evaluation result is judged to be unqualified, and the maintenance personnel are reminded to maintain the growth process and issue an early warning; if the gallium oxide growth evaluation value is greater than or equal to the set gallium oxide growth evaluation threshold, the gallium oxide growth evaluation result is judged to be normal growth.

2. The gallium oxide crystal growth evaluation method based on performance analysis according to claim 1, characterized in that: The specific steps of obtaining the performance data of the gallium oxide crystal during the growth process and simultaneously obtaining the single crystal furnace data during the growth process are: S11, during the growth process of the gallium oxide crystal, periodically obtaining carrier concentration and carrier mobility data at each position of the gallium oxide crystal through a sensor, and simultaneously obtaining corresponding growth time, and storing them in a first storage module; S12, acquiring an image of the surface of the gallium oxide crystal through a sensor, and acquiring bottom area and height data of pits and protrusions on the surface of the gallium oxide crystal, and storing them in a second storage module; S13. Acquire single crystal furnace data during the growth process through sensors, wherein the single crystal furnace data includes single crystal furnace temperature and gas concentration data, and are stored in a third storage module.

3. A gallium oxide crystal growth evaluation system based on performance analysis, which is implemented based on the gallium oxide crystal growth evaluation method based on performance analysis as claimed in any one of claims 1 to 2, characterized in that: It specifically includes a data acquisition module, a growth performance evaluation module, a growth scenario adaptation evaluation module, a growth evaluation result analysis module, a growth evaluation early warning module and a general control module, wherein the data acquisition module is used to obtain the performance data of the gallium oxide crystal during the growth process, and simultaneously obtain the single crystal furnace data during the growth process; The growth performance evaluation module is used to import the acquired performance data of the gallium oxide crystal during the growth process into the growth performance evaluation model to perform growth performance evaluation; The growth scenario adaptation assessment module is used to obtain single crystal furnace data of gallium oxide crystals during the growth process and import it into the growth process scenario assessment model to perform growth scenario adaptation assessment; The growth evaluation result analysis module is used to comprehensively analyze the growth performance evaluation result and the growth scenario adaptation evaluation result to obtain the gallium oxide growth evaluation result; The growth assessment and early warning module is used to perform growth assessment and early warning according to the obtained gallium oxide growth assessment result; The general control module is used to control the data acquisition module, the growth performance evaluation module, the growth scenario adaptation evaluation module, the growth evaluation result analysis module and the growth evaluation early warning module.

4. An electronic device comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; It is characterized in that the processor executes the gallium oxide crystal growth evaluation method based on performance analysis as described in any one of claims 1 to 2 by calling the computer program stored in the memory.

5. A computer-readable storage medium, characterized in that: Instructions are stored, and when the instructions are executed on a computer, the computer is caused to execute the gallium oxide crystal growth evaluation method based on performance analysis as claimed in any one of claims 1 to 2.

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