A heat shrink module for optical fiber fusion splicing machine

Abstract

The invention discloses a heat shrink module for an optical fiber fusion splicer, which relates to the field of optical fiber fusion splicers. A heating core is divided into N equal sections; and a level control unit is connected at each equal point of the heating core; the level control unit is used to output a high level or a low level to the heating core at the corresponding equal point, and the high and low levels at each equal point can be flexibly switched and controlled. The temperature distribution of the heating core is self-adapted through the combination and power distribution of each equal section, so that the best heat shrink performance can be achieved under all working conditions of heat shrinkage of the heat shrink tube, and ineffective energy consumption can be avoided to achieve energy saving.

Description

Technical Field

[0001] The invention relates to the field of optical fiber fusion splicers, and in particular to a heat shrink module for an optical fiber fusion splicer. Background Art

[0002] In order to achieve the goal of leaving no bubbles behind after the heat shrink tubing is shrunk, the existing heat shrink module of the welding machine adopts a non-uniform arrangement of resistance wires (higher heat in the center and lower heat on both sides), and first reaches the heat shrink temperature at the central position, so that the heat shrink tubing shrinks from the inside to the outside to ensure smooth discharge of air. In order to ensure that the temperatures on both sides can reach the heat shrink temperature, this solution needs to continue heating after the central temperature has reached the heat shrink temperature. Continuing to heat at the central position is an ineffective energy consumption, which not only wastes the battery power of the portable device, but also prolongs the time required for heat shrinkage. In addition, the existing heat shrink module of the welding machine adopts a fixed non-uniform arrangement of resistance wires, and the temperature distribution is fixed. However, due to the differences in length, diameter, material and placement of the heat shrink tubing, its optimal heat shrink temperature distribution is also different. The existing solution cannot be modulated on demand. Summary of the invention

[0003] The purpose of the present invention is to provide a heat shrink module for an optical fiber fusion splicer, which can realize the self-adaptation of the temperature distribution of the heating core through the combination of equal segments and power distribution, so as to achieve the best heat shrink performance under all working conditions of heat shrinkage of the heat shrinkable tube, avoid ineffective energy consumption and achieve energy saving.

[0004] To achieve the above object, the present invention provides the following solutions:

[0005] A heat shrink module for an optical fiber fusion splicer, the heat shrink module comprising: a heating core and a plurality of level control units; the heating core is divided into N equal sections; each equal section point of the heating core is connected to a level control unit;

[0006] The level control unit is used to output a high level or a low level to the heating cores at the equally divided points connected to the level control unit so that the heating cores between the equally divided points of the high level and the equally divided points of the low level are heated.

[0007] Optionally, the level control units have the same structure.

[0008] Optionally, the level control unit includes an NPN transistor, a resistor, a P_MOSFET and an N_MOSFET;

[0009] The collector of the NPN transistor is connected to a 12V power supply via a resistor, and the emitter of the NPN transistor is grounded;

[0010] The source of the P_MOSFET is connected to the 12V power supply, the gate of the P_MOSFET is respectively connected to the collector of the NPN transistor and the gate of the N_MOSFET, and the drain of the P_MOSFET is connected to the drain of the N_MOSFET; a first diode is connected in parallel between the source of the P_MOSFET and the drain of the P_MOSFET, the anode of the first diode is connected to the drain of the P_MOSFET, and the cathode of the first diode is connected to the source of the P_MOSFET;

[0011] The source of the N_MOSFET is grounded, and a second diode is connected in parallel between the drain of the N_MOSFET and the source of the N_MOSFET; the anode of the second diode is connected to the source of the N_MOSFET, and the cathode of the second diode is connected to the drain of the N_MOSFET;

[0012] The base of the NPN transistor is the control signal input terminal of the level control unit;

[0013] The drain of the P_MOSFET and the drain of the N_MOSFET are connected to corresponding equally divided points of the heating core.

[0014] Optionally, the control signal input terminals of the level control units are connected to different IO interfaces of the same single chip microcomputer.

[0015] Optionally, a thermistor is provided on each equal segment of the heating core; the thermistor is used to measure the temperature of the heating core on the corresponding equal segment.

[0016] Optionally, the heating temperatures of the various segments of the heating core are regulated according to the proportion of the power supply time of the various segments.

[0017] Optionally, the length of the heating core and the length of each equal segment of the heating core are adjusted according to the length of the heat shrinkable tube to be heat shrunk.

[0018] Optionally, the resistance values ​​of the equal segments of the heating core are the same.

[0019] According to the specific embodiments provided by the present invention, the present invention discloses the following technical effects:

[0020] The present invention discloses a heat shrink module for an optical fiber fusion splicer, which divides a heating core into N equal segments; and connects a level control unit at each equal point of the heating core; the level control unit is used to output a high level or a low level to the heating core at the corresponding equal point, and the high and low levels at each equal point can be flexibly switched and controlled. The temperature distribution of the heating core is self-adapted through the combination and power distribution of each equal segment, so that the best heat shrink performance can be achieved under all working conditions of heat shrinkage of the heat shrink tube, and ineffective energy consumption can be avoided to achieve energy saving. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 A schematic diagram of an equally divided heating core of a heat shrink module of an optical fiber fusion splicer provided in Example 1 of the present invention;

[0023] Figure 2 A schematic diagram of the circuit structure of a level control unit provided in Embodiment 1 of the present invention;

[0024] Figure 3 This is a control timing diagram of the first stage of the 40mm center heating mode provided in Example 1 of the present invention;

[0025] Figure 4 The second stage control timing diagram of the 40mm center heating mode provided in Example 1 of the present invention;

[0026] Figure 5 The first stage control timing diagram of the 40mm right bias heating mode provided in Example 1 of the present invention;

[0027] Figure 6 This is a second stage control timing diagram of the 40mm right bias heating mode provided in Example 1 of the present invention. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] The purpose of the present invention is to provide a heat shrink module for an optical fiber fusion splicer, which can realize the self-adaptation of the temperature distribution of the heating core through the combination of equal segments and power distribution, so as to achieve the best heat shrink performance under all working conditions of heat shrinkage of the heat shrinkable tube, avoid ineffective energy consumption and achieve energy saving.

[0030] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0031] Example 1

[0032] This embodiment provides a heat shrink module for an optical fiber fusion splicer, the heat shrink module comprising: a heating core and a plurality of level control units; the heating core is divided into N equal sections; each equal section point of the heating core is connected to a level control unit.

[0033] The level control unit is used to output a high level or a low level to the heating cores at the equally divided points connected to the level control unit so as to randomly control the heating of the heating cores corresponding to the different equally divided sections by adjusting the high and low levels.

[0034] like Figure 1 As shown, a heating core structure divided into four equal parts is shown, which is only an example, and different numbers of equal parts can be set according to needs. A pin (pin a, pin b, pin c, pin d, pin e) is provided at each equal point to be connected to the output pin of the corresponding level control unit.

[0035] In order to ensure that the heating temperature of each heating wire segment (the heating core corresponding to the equal segments) can be obtained in real time, a thermistor R1 can be set on each heating wire segment to measure the temperature of each heating wire segment.

[0036] In order to ensure control accuracy, the level control units may be required to have the same structure.

[0037] Among them, Figure 2 As shown, the level control unit includes an NPN transistor Q1, a resistor R2, a P_MOSFET and an N_MOSFET.

[0038] Figure 2 In the figure, the NPN transistor Q1 includes a base B, a collector C and an emitter E; the P_MOSFET and the N_MOSFET include a gate G, a source S and a drain D.

[0039] The collector of the NPN transistor Q1 is connected to a 12V power supply via a resistor R2, and the emitter of the NPN transistor Q1 is grounded.

[0040] The source of the P_MOSFET is connected to the 12V power supply, the gate of the P_MOSFET is respectively connected to the collector of the NPN transistor Q1 and the gate of the N_MOSFET, and the drain of the P_MOSFET is connected to the drain of the N_MOSFET; a first diode Q2 is connected in parallel between the source of the P_MOSFET and the drain of the P_MOSFET, the anode of the first diode Q2 is connected to the drain of the P_MOSFET, and the cathode of the first diode Q2 is connected to the source of the P_MOSFET.

[0041] The source of the N_MOSFET is grounded, and a second diode Q3 is connected in parallel between the drain of the N_MOSFET and the source of the N_MOSFET; the anode of the second diode Q3 is connected to the source of the N_MOSFET, and the cathode of the second diode Q3 is connected to the drain of the N_MOSFET.

[0042] The base of the NPN transistor Q1 is the control signal input terminal of the level control unit.

[0043] The drain of the P_MOSFET and the drain of the N_MOSFET are connected to corresponding equally divided points of the heating core.

[0044] The present invention applies time division multiplexing technology, connects the control signal input end of each level control unit to different IO interfaces of the same single chip microcomputer, and uses the single chip microcomputer to control the output signal of each IO interface to control the high and low levels at different equally divided points.

[0045] In order to ensure that the heat shrink module of the present invention has a wider applicability, the length of the heating core and the length of each equal segment of the heating core are adjusted according to the length of the heat shrink tube to be heat shrunk, so that different heat shrink tubes can be adapted. And in order to ensure the realization of uniform resistance continuous multi-segment heating, the resistance of each equal segment of the heating core is the same.

[0046] Taking the four-segment heating core as an example, the microcontroller control pins include STC8_IO_A, STC8_IO_B, STC8_IO_C, STC8_IO_D, and STC8_IO_E, which are used to connect the control signal input ends of each level control unit, that is, connected to the base of each NPN transistor Q1.

[0047] Take pin a as an example:

[0048] Pin a is connected to the power supply: when the microcontroller pin STC8_IO_A is at a high level of 5V, P_MOSFET is turned on, N_MOSFET is turned off, and pin a of the heating core is positive.

[0049] Pin a is grounded: When the microcontroller pin STC8_IO_A is at a low level of 0V, P_MOSFET is turned off, N_MOSFET is turned on, and pin a of the heating core is negative.

[0050] The heating of each section of the heating core is controlled by time-division multiplexing power control, and the proportion of power supply time is adjusted to control the temperature of each section of the heating core.

[0051] The following is an example of a heating mode using a four-segment heating core as an example:

[0052] (I) 40mm center heating mode

[0053] 1. The heating wire bd is heated, while the heating wires ab and de are not heated:

[0054] STC8_IO_A=5V, P_MOSFET is on, N_MOSFET is off, heating core pin a=12V;

[0055] STC8_IO_B=5V, P_MOSFET is on, N_MOSFET is off, heating core pin b=12V;

[0056] STC8_IO_C=0V, P_MOSFET is off, N_MOSFET is on, heating core pin e=0V;

[0057] STC8_IO_D=5V, P_MOSFET is on, N_MOSFET is off, heating core pin d=12V;

[0058] STC8_IO_E=5V, P_MOSFET is on, N_MOSFET is off, heating core pin e=12V;

[0059] The IO port of the single chip microcomputer is controlled by the above level, so that the heating wire bc and the heating wire cd segments are heated, and the other positions are not heated.

[0060] 2. Heating wire bd does not heat, while heating wire ab and heating wire de heat:

[0061] STC8_IO_A=0V, P_MOSFET is off, N_MOSFET is on, heating core pin a=0V;

[0062] STC8_IO_B=5V, P_MOSFET is on, N_MOSFET is off, heating core pin b=12V;

[0063] STC8_IO_C=5V, P_MOSFET is on, N_MOSFET is off, heating core pin e=12V;

[0064] STC8_IO_D=5V, P_MOSFET is on, N_MOSFET is off, heating core pin d=12V;

[0065] STC8_IO_E=0V, P_MOSFET is off, N_MOSFET is on, heating core pin e=0V;

[0066] The IO interface of the single chip microcomputer is controlled by the above level, so that the heating wires ab and the heating wire de are heated, and the other positions are not heated.

[0067] 3. The heating time of each section of the heating wire is controlled by the duration of the high and low levels of the microcontroller IO interface.

[0068] The first stage Figure 3 As shown, every three rows form a cycle, and the heating wire bd heats up quickly, causing the middle section of the heat shrink tube to shrink quickly.

[0069] The second stage Figure 4 As shown, every three rows form a cycle, the heating wires ab and de are heated up quickly, causing the two ends of the heat shrink tube to shrink.

[0070] (ii) 40mm left / right bias heating mode

[0071] 1. The heating wire bd is heated, while the heating wires ab and de are not heated:

[0072] STC8_IO_A=5V, P_MOSFET is on, N_MOSFET is off, heating core pin a=12V;

[0073] STC8_IO_B=5V, P_MOSFET is on, N_MOSFET is off, heating core pin b=12V;

[0074] STC8_IO_C=0V, P_MOSFET is off, N_MOSFET is on, heating core pin e=0V;

[0075] STC8_IO_D=5V, P_MOSFET is on, N_MOSFET is off, heating core pin d=12V;

[0076] STC8_IO_E=5V, P_MOSFET is on, N_MOSFET is off, heating core pin e=12V;

[0077] The IO port of the single chip microcomputer is controlled by the above level, so that the heating wire bc and the heating wire cd segments are heated, and the other positions are not heated.

[0078] 2. The heating wire ce is heated, and the heating wire ac is not heated:

[0079] STC8_IO_A=5V, P_MOSFET is on, N_MOSFET is off, heating core pin a=12V;

[0080] STC8_IO_B=5V, P_MOSFET is on, N_MOSFET is off, heating core pin b=12V;

[0081] STC8_IO_C=5V, P_MOSFET is on, N_MOSFET is off, heating core pin e=12V;

[0082] STC8_IO_D=0V, P_MOSFET is off, N_MOSFET is on, heating core pin d=0V;

[0083] STC8_IO_E=5V, P_MOSFET is on, N_MOSFET is off, heating core pin e=12V;

[0084] The IO port of the single chip microcomputer is controlled by the above level, so that the heating wire cd and the heating wire de segment are heated, and the other positions are not heated.

[0085] 3. Heating wires bc and de are heated, and the rest are not heated:

[0086] STC8_IO_A=5V, P_MOSFET is on, N_MOSFET is off, heating core pin a=12V;

[0087] STC8_IO_B=5V, P_MOSFET is on, N_MOSFET is off, heating core pin b=12V;

[0088] STC8_IO_C=0V, P_MOSFET is off, N_MOSFET is on, heating core pin e=0V;

[0089] STC8_IO_D=0V, P_MOSFET is off, N_MOSFET is on, heating core pin d=0V;

[0090] STC8_IO_E=5V, P_MOSFET is on, N_MOSFET is off, heating core pin e=12V;

[0091] The IO port of the single chip microcomputer is controlled by the above level, so that the heating wire bc and the heating wire de segment are heated, and the other positions are not heated.

[0092] 4. The heating time of each section of the heating wire is controlled by the duration of the high and low levels of the microcontroller IO port.

[0093] The first stage Figure 5As shown, every 5 rows form a cycle, the heating wire cd heats up quickly, causing the middle section of the heat shrink tube to shrink quickly.

[0094] The second stage Figure 6 As shown, every 5 rows form a cycle, the heating wires bc and de are heated up quickly, causing the two ends of the heat shrink tube to shrink.

[0095] In the present invention, the following effects can be achieved by using uniform resistance continuous multi-channel segmented heating wires and segmented time division multiplexing technology:

[0096] (1) Under the condition of keeping the total power constant, by adjusting the duty cycle of different resistance wire segments, the central area can reach the heat shrinkage temperature first and then keep warm immediately, and the output power can be distributed to the two sides so that they can reach the heat shrinkage temperature faster and keep warm, thereby achieving a dual improvement in heat shrinkage performance and energy saving.

[0097] (2) When faced with heat shrink tubing of different lengths, diameters, materials, and placement positions, the temperature distribution can be adapted through segmented combination and power allocation, so that optimal performance and energy-saving indicators can be achieved under all working conditions.

[0098] (3) The uniform resistance continuous multi-channel segmented heating wire avoids the precision requirements of resistance control for fixed non-uniform resistance and reduces the production difficulty of the heat shrink module.

[0099] (4) The uniform resistance continuous multi-channel segmented heating wire can select the heating range according to actual needs, so as to flexibly heat different positions of the heat shrink tube.

[0100] (5) Time-division multiplexing power control not only avoids ineffective energy consumption and achieves energy saving, but also improves the heating speed of heat shrinkage.

[0101] (6) The heat shrink control accuracy of the heat shrink tubing can be adjusted by adjusting the number of segments.

[0102] The principles and implementation methods of the present invention are described in this article using specific examples. The description of the above embodiments is only used to help understand the method and core idea of ​​the present invention. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A heat shrink module for optical fiber fusion splicing machine, It is characterized in that The heat shrink module comprises: a heating core and a plurality of level control units; the heating core is divided into N equal sections; each equal section point of the heating core is connected to a level control unit; The level control unit is used to output a high level or a low level to the heating cores at the equally divided points connected to the level control unit so as to randomly control the heating of the heating cores corresponding to the different equally divided sections by adjusting the high and low levels; The level control unit includes an NPN transistor, a resistor, a P_MOSFET and an N_MOSFET; The collector of the NPN transistor is connected to a 12V power supply via a resistor, and the emitter of the NPN transistor is grounded; The source of the P_MOSFET is connected to the 12V power supply, the gate of the P_MOSFET is respectively connected to the collector of the NPN transistor and the gate of the N_MOSFET, and the drain of the P_MOSFET is connected to the drain of the N_MOSFET; a first diode is connected in parallel between the source of the P_MOSFET and the drain of the P_MOSFET, the anode of the first diode is connected to the drain of the P_MOSFET, and the cathode of the first diode is connected to the source of the P_MOSFET; The source of the N_MOSFET is grounded, and a second diode is connected in parallel between the drain of the N_MOSFET and the source of the N_MOSFET; the anode of the second diode is connected to the source of the N_MOSFET, and the cathode of the second diode is connected to the drain of the N_MOSFET; The base of the NPN transistor is the control signal input terminal of the level control unit; The drain of the P_MOSFET and the drain of the N_MOSFET are connected to the corresponding heating core equally divided points; The control signal input terminals of the level control units are connected to different IO interfaces of the same single chip microcomputer; A thermistor is provided on each equal segment of the heating core; the thermistor is used to measure the temperature of the heating core on the corresponding equal segment; and the resistance value of the thermistors of each equal segment of the heating core is the same.

2. A heat shrinkable module for an optical fiber fusion splicer according to claim 1, It is characterized in that The level control units have the same structure.

3. The heat shrinkable module of the optical fiber fusion splicer according to claim 1, It is characterized in that The heating temperature of each equal segment of the heating core is regulated according to the proportion of the power supply time of each equal segment.

4. The heat shrinkable module for optical fiber fusion splicing machine according to claim 1, It is characterized in that The length of the heating core and the length of each equal segment of the heating core are adjusted according to the length of the heat shrinkable tube to be heat shrunk.

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