Resistance determination circuit and resistance determination system

Abstract

The application discloses a resistance determination circuit and a resistance determination system. The resistance determination circuit comprises a first control module, a second control module, a high electron mobility transistor, and a first capacitor. The first control module is electrically connected with the control end of the high electron mobility transistor. The second control module is electrically connected with the first end of the high electron mobility transistor. The second end of the high electron mobility transistor is electrically connected with a reference voltage end. The first end of the first capacitor is electrically connected with the first end of the high electron mobility transistor and the second control module. The second end of the first capacitor is electrically connected with the reference voltage end. The embodiment of the application can realize soft switching test and hard switching test based on one circuit.

Description

Technical Field

[0001] This application belongs to the field of electronic circuit technology, and in particular relates to a resistance determination circuit and a resistance determination system. Background Technology

[0002] Dynamic resistance testing of power devices such as High Electron Mobility Transistors (HEMTs) is crucial for understanding device performance and degradation status. HEMT dynamic resistance testing primarily measures the resistance change after the HEMT switches from off to on. The testing process mainly includes soft-switching and hard-switching tests. Soft-switching testing involves measuring the resistance of the HEMT at the instant it switches from off to on, with only high voltage passing through it. Hard-switching testing involves measuring the resistance of the HEMT at the instant it switches from off to on, with both high voltage and high current passing through it simultaneously.

[0003] Currently, the two tests mentioned above require different test circuits, resulting in a cumbersome testing process and low testing efficiency. Summary of the Invention

[0004] This application provides a resistance determination circuit and a resistance determination system, which can determine the resistance of a high electron mobility transistor in soft-switching and hard-switching tests based on a single circuit.

[0005] In a first aspect, embodiments of this application provide a resistance determination circuit, including:

[0006] The first control module is electrically connected to the control terminal of the high electron mobility transistor.

[0007] The second control module is electrically connected to the first terminal of the high electron mobility transistor; the second terminal of the high electron mobility transistor is electrically connected to the reference voltage terminal.

[0008] The first capacitor has its first terminal electrically connected to the first terminal of the high electron mobility transistor and the second control module, and its second terminal is electrically connected to the reference voltage terminal.

[0009] When the first control module outputs a first voltage in response to receiving a first control signal, and the second control module outputs a second voltage in response to receiving a second control signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn off, and the first terminal of the high electron mobility transistor turns off to withstand high voltage in response to the second voltage output by the second control module.

[0010] When the second control module outputs a third voltage in response to receiving a third control signal, and the first control module outputs a fourth voltage in response to receiving a fourth control signal, the voltage at the first terminal of the high electron mobility transistor is pulled to the third voltage. The control terminal of the high electron mobility transistor controls the high electron mobility transistor to conduct. The resistance of the high electron mobility transistor is determined by detecting the voltage between the first and second terminals of the high electron mobility transistor, and the current output from the second terminal of the high electron mobility transistor; or

[0011] When the first control module outputs a first voltage in response to receiving a first control signal, and the second control module outputs a second voltage in response to receiving a second control signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn off, and the first terminal of the high electron mobility transistor turns off the high voltage in response to the second voltage output by the second control module, and the voltage of the first capacitor is pulled up to the second voltage.

[0012] When the second control module disconnects the electrical connection with the high electron mobility transistor in response to receiving the fifth control signal, and the first control module outputs a fourth voltage in response to receiving the fourth control signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to conduct, and the first capacitor discharges through the high electron mobility transistor. After a preset time period, when the second control module outputs a third voltage in response to receiving the third control signal, the voltage at the first terminal of the high electron mobility transistor is pulled to the third voltage. The resistance of the high electron mobility transistor is determined by detecting the voltage between the first terminal and the second terminal of the high electron mobility transistor, as well as the current output from the second terminal of the high electron mobility transistor.

[0013] Secondly, embodiments of this application provide a power supply system, including:

[0014] High electron mobility transistor and resistance determination circuit as shown in the first aspect.

[0015] The resistance determination circuit and system provided in this application include a first control module, a second control module, a first capacitor, and a resistance determination circuit. The first control module outputs a first voltage or a fourth voltage to control the high electron mobility transistor's (HEM) turn-off and turn-on. The second control module outputs a second voltage or a third voltage to control the HEM's high voltage withstand capability, enabling soft-switching testing to determine resistance. Simultaneously, based on the first capacitor and the second control module, a high voltage and high current environment is provided for the HEM, enabling hard-switching testing to determine resistance. This overcomes the problem of low testing efficiency caused by the need for different test circuits for the two tests in the prior art, thus improving testing efficiency. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of a resistance determination system provided for some embodiments of this application.

[0018] Figure 2 This is a schematic diagram of a resistance determination circuit provided for some embodiments of this application.

[0019] Figure 3A This is a schematic diagram illustrating the change of resistance with voltage, provided for some embodiments of this application.

[0020] Figure 3B This is another schematic diagram illustrating the change of resistance with voltage, provided for some embodiments of this application.

[0021] Figure 4 This is a schematic diagram of another resistance determination circuit provided for some embodiments of this application.

[0022] Figure 5 This is a schematic diagram of yet another resistance determination circuit provided for some embodiments of this application.

[0023] Figure 6 This is a schematic diagram of yet another resistance determination circuit provided for some embodiments of this application.

[0024] Figure 7 This is a schematic diagram of yet another resistance determination circuit provided for some embodiments of this application. Detailed Implementation

[0025] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are intended only to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0026] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0027] Dynamic on-resistance (RON) is a significant characteristic of GaN high electron mobility transistors (HEMTs). Applying a high voltage to the drain of a GaN device leads to an increase in its on-resistance, a phenomenon known as current collapse. This effect affects the dynamic stability of the device and degrades its conduction characteristics. Therefore, dynamic resistance testing of power devices such as HEMTs is crucial for understanding device performance and degradation status. Currently, resistance testing for HEMTs mainly includes soft-switching testing and hard-switching testing. However, in existing technologies, these two tests require different test circuits, resulting in cumbersome testing processes and low testing efficiency.

[0028] Based on this, embodiments of this application provide a resistance determination circuit and a resistance determination system that can solve the above-mentioned problems. The resistance determination circuit and resistance determination system provided in the embodiments of this application will be described in detail below.

[0029] In some embodiments, such as Figure 1 As shown, this application embodiment provides a resistance determination system 100, including:

[0030] High electron mobility transistor 101 and resistance determination circuit 102.

[0031] The control terminal and the first terminal of the high electron mobility transistor 101 are both electrically connected to the resistor determination circuit, and the second terminal of the high electron mobility transistor 101 is electrically connected to the reference voltage terminal.

[0032] Here, the control terminal of the high electron mobility transistor 101 is the gate of the high electron mobility transistor 101, the first terminal of the high electron mobility transistor 101 is the drain of the high electron mobility transistor 101, and the second terminal of the high electron mobility transistor 101 is the source of the high electron mobility transistor 101.

[0033] The resistance determination circuit 102 described above can perform soft-switching and hard-switching tests on the high electron mobility transistor 101, thereby determining the dynamic resistance of the high electron mobility transistor 101 in different tests.

[0034] In some embodiments, such as Figure 2 As shown, this application embodiment provides a resistance determination circuit 102, including:

[0035] A first control module 201 is electrically connected to the control terminal of the high electron mobility transistor; a second control module 202 is electrically connected to the first terminal of the high electron mobility transistor; a first capacitor C1 is electrically connected to the first terminal of the high electron mobility transistor and the second control module 202, and the second terminal of the first capacitor C1 is electrically connected to the reference voltage terminal.

[0036] Here, the first control module 201 can output different voltages in response to different control signals. For example, it can output a first voltage based on the first control signal and a fourth voltage based on the fourth control signal. Here, the first voltage is low level, and the control terminal of the high electron mobility transistor can control the high electron mobility transistor to turn off when it receives the first voltage; the fourth voltage is high level, and the control terminal of the high electron mobility transistor can control the high electron mobility transistor to turn on when it receives the fourth voltage.

[0037] Similarly, the second control module 202 can output different voltages in response to different control signals. For example, it can output a second voltage based on a second control signal and a third voltage based on a third control signal. Here, the second voltage is a high voltage. When the high electron mobility transistor is turned off, the first terminal of the high electron mobility transistor can turn off the high voltage when it receives the second voltage.

[0038] In some embodiments, the step of performing soft-switching tests on high electron mobility transistors includes:

[0039] First, the first control module 201 responds to receiving the first control signal by outputting the first voltage, and the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn off. The second control module 202 responds to receiving the second control signal by outputting the second voltage, and the first terminal of the high electron mobility transistor turns off and withstands high voltage in response to the second voltage output by the second control module 202.

[0040] Secondly, in response to receiving the third control signal, the second control module 202 outputs a third voltage, and the voltage at the first terminal of the high electron mobility transistor is pulled to the third voltage. In response to receiving the fourth control signal, the first control module 201 outputs a fourth voltage, and the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn on. The resistance of the high electron mobility transistor is determined by detecting the voltage between the first terminal and the second terminal of the high electron mobility transistor, as well as the current output from the second terminal of the high electron mobility transistor.

[0041] Here, it can be imagined that when the second control module responds to receiving the second control signal and outputs the second voltage, the voltage of the first capacitor will be pulled up to the second voltage, and when the second control module responds to the third control signal and outputs the third voltage, the voltage of the first capacitor will be pulled up to the third voltage.

[0042] Based on the above steps, a soft-switching test can be performed on the high electron mobility transistor (HEMT) to determine its resistance after soft-switching. At the start of the test, with the HEMT remaining off, a high voltage (second voltage) is input to the first terminal of the HEMT via the second control module 202, causing a current collapse effect. Then, the second control module 202 outputs a third voltage, pulling the HEMT's voltage to the third voltage and turning it on, thus measuring the resistance of the HEMT during soft-switching.

[0043] In some embodiments, the step of performing hard-switching tests on high electron mobility transistors includes:

[0044] First, the first control module 201 responds to receiving the first control signal and outputs the first voltage. The control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn off. The second control module 202 responds to receiving the second control signal and outputs the second voltage. The first terminal of the high electron mobility transistor responds to the second voltage output by the second control module 202 and turns off the high voltage. The voltage of the first capacitor C1 is pulled up to the second voltage.

[0045] Secondly, in response to receiving the fifth control signal, the second control module 202 disconnects the electrical connection with the high electron mobility transistor. In response to receiving the fourth control signal, the first control module 201 outputs a fourth voltage. The control terminal of the high electron mobility transistor controls the high electron mobility transistor to conduct. The first capacitor discharges through the high electron mobility transistor. After the discharge is completed, the high electron mobility transistor is still in the conducting state. After a preset time period, in response to receiving the third control signal, the second control module outputs a third voltage. The voltage at the first terminal of the high electron mobility transistor is pulled to the third voltage. At this time, the resistance of the high electron mobility transistor can be determined by detecting the voltage between the first terminal and the second terminal of the high electron mobility transistor, as well as the current output from the second terminal of the high electron mobility transistor.

[0046] Based on the above steps, a hard-switching test can be performed on the high electron mobility transistor (HEMT) to determine its resistance. At the start of the test, with the HEMT remaining off, a high voltage (second voltage) is input to the first terminal of the HEMT by the second control module 202, causing a current collapse effect in the HEMT. Simultaneously, the second voltage charges the first capacitor C1, pulling its voltage to the second voltage level. Then, the second control module 202 disconnects the electrical connection to the HEMT, and the first control module 201 outputs a fourth power supply to turn the HEMT on, allowing the first capacitor C1 to discharge through the HEMT, thus achieving hard-switching. After the discharge, the HEMT remains on. After a preset time period, the second control module outputs a third voltage to the first terminal of the HEMT. Therefore, the resistance of the HEMT can be determined by detecting the voltage between the first and second terminals of the HEMT, as well as the current output from the second terminal.

[0047] In some examples, a high-precision voltmeter can be used to detect the voltage between the first and second terminals of a high electron mobility transistor (HEMT), and a high-precision galvanometer can be used to detect the current output from the second terminal of the HEMT. Based on these voltage and current readings, the resistance of the HEMT can be determined. Here, as... Figure 2 As shown, it can be done through, as Figure 2 The ammeter is set to detect the current output from the second terminal of the high electron mobility transistor.

[0048] In some examples, before determining the resistance of the high electron mobility transistor based on the above steps, it is necessary to set the first control module 201 to output a first voltage based on a first control signal, and the second control module 202 to output a third voltage based on a third control signal, so that the high electron mobility transistor remains off before the test begins, and the first terminal of the high electron mobility transistor is in a non-high voltage environment. It is conceivable that the above hard-switching test or soft-switching test process can be repeated to determine the dynamic resistance change of the high electron mobility transistor.

[0049] This application implements a first control module 201, a second control module 202, a first capacitor C1, and a resistor determination circuit. By using the first voltage or fourth voltage output by the first control module 201 and the second voltage or third voltage output by the second control module 202, it achieves soft-switching test and hard-switching test to determine the resistance of high electron mobility transistors based on the above two control modules and the first capacitor C1, thereby improving test efficiency.

[0050] In some embodiments, the second voltage may include multiple second sub-voltages. The second control module 202 described above can respond to control signals and output different second sub-voltages. By setting different second sub-power supplies, the resistance of the high electron mobility transistor after the current collapse effect generated by different high voltages can be determined. Figure 3A , Figure 3A This is a schematic diagram illustrating the resistance of an exemplary high electron mobility transistor under soft-switching testing as a function of different second sub-voltages. Figure 3B This is a schematic diagram illustrating the resistance of an exemplary high electron mobility transistor under hard-switching testing as a function of different second sub-voltages.

[0051] In some embodiments, such as Figure 4 As shown, the first control module 201 includes a first signal terminal 401, a first control switch S1, a second control switch S2, and a second signal terminal 402; the first control signal includes a first sub-signal and a second sub-signal; the fourth control signal includes a third sub-signal and a fourth sub-signal.

[0052] The first terminal of the first control switch S1 is electrically connected to the first signal terminal 401, and the second terminal of the first control switch S1 is electrically connected to the first terminal of the second control switch S2 and the control terminal of the high electron mobility transistor; the second terminal of the second control switch S2 is electrically connected to the second signal terminal 402.

[0053] With the above settings, the opening or closing of S1 and the opening or closing of S2 can be controlled, so as to realize the first voltage of the first signal terminal output by the first control module, or the fourth voltage of the second signal terminal 402.

[0054] In some embodiments, when the control terminal of the first control switch S1 controls the first control switch S1 to turn off in response to receiving a first sub-signal, and the control terminal of the second control switch S2 controls the second control switch S2 to turn on in response to receiving a second sub-signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn off in response to receiving a first voltage output from the second signal terminal 402; or

[0055] When the control terminal of the second control switch S2 responds to receiving the third sub-signal and controls the third control switch to turn off, and the control terminal of the first control switch S1 responds to receiving the fourth sub-signal and controls the fourth control switch to turn on, the control terminal of the high electron mobility transistor responds to receiving the fourth voltage output from the first signal terminal 401 and controls the high electron mobility transistor to turn on.

[0056] This application embodiment sets the first control module to include a first signal terminal 401, a first control switch S1, a second control switch S2, and a second signal terminal 402; and sets the first control signal to include a first sub-signal and a second sub-signal, and the fourth control signal to include a third sub-signal and a fourth sub-signal. This enables the first control module to turn off or on based on the different control switches responding to different control signals, and enables the first control module to output a first voltage from the first signal terminal 401 or a fourth voltage from the second signal terminal 402.

[0057] In some embodiments, the first control switch includes a first MOSFET or a second MOSFET, and the second control switch includes a third MOSFET;

[0058] The control terminal of the first control switch is the gate of the first MOSFET, the first terminal of the first control switch is the drain of the first MOSFET, and the second terminal of the first control switch is the source of the first MOSFET; or

[0059] The control terminal of the first control switch is the gate of the second MOS transistor, the first terminal of the first control switch is the source of the second MOS transistor, and the second terminal of the first control switch is the drain of the second MOS transistor.

[0060] The control terminal of the second control switch is the gate of the third MOS transistor, the first terminal of the second control switch is the drain of the third MOS transistor, and the second terminal of the second control switch is the source of the third MOS transistor.

[0061] The first MOSFET can be an N-type MOSFET, the second MOSFET can be a P-type MOSFET, and the third MOSFET can be an N-type MOSFET.

[0062] This application embodiment flexibly utilizes either P-type or N-type MOS transistors by setting a first control switch, which can achieve two different tests based on the above-mentioned resistor determination circuit, while improving the flexibility of circuit setup.

[0063] In some embodiments, such as Figure 5 As shown, the first control module may include a first control chip U1, a first signal terminal 401, and a second signal terminal 402. The first terminal of the first control chip U1 is electrically connected to the first signal terminal 401, the second terminal of the first control chip U1 is electrically connected to the second signal terminal 402, and the first output terminal of the first control chip U1 is electrically connected to the control terminal of the high electron mobility transistor. The first control chip U1 has a gating function; when the input terminal of the first control chip U1 receives a first control signal, it can select a first voltage output through the first signal terminal 401; or, when the input terminal of the first control chip U1 receives a fourth control signal, it can select a fourth voltage output through the second signal terminal 402.

[0064] In some embodiments, such as Figure 5 As shown, Figure 5 The diagram illustrates an exemplary resistance determination circuit. The second control module includes a third signal terminal 501, a third control switch S3, a fourth control switch S4, and a fourth signal terminal 502. The second control signal includes a fifth sub-signal and a sixth sub-signal. The third control signal includes a seventh sub-signal and an eighth sub-signal. The fifth control signal includes a ninth sub-signal and a tenth sub-signal.

[0065] The first terminal of the third control switch S3 is electrically connected to the third signal terminal 501. The second terminal of the third control switch S3 is electrically connected to the first terminal of the fourth control switch S4 and the first terminal of the high electron mobility transistor. The second terminal of the fourth control switch S4 is electrically connected to the fourth signal terminal 502.

[0066] With the above settings, the switching on or off of S3 and the switching on or off of S4 can be controlled, so that the second control module outputs the second voltage of the third signal terminal 501 or the third voltage of the fourth signal terminal 502.

[0067] When the control terminal of the fourth control switch S4 turns off in response to receiving the sixth sub-signal, and the control terminal of the third control switch S3 turns on in response to receiving the fifth sub-signal, the first terminal of the high electron mobility transistor turns off the high voltage in response to receiving the second voltage output from the third signal terminal 501, and the voltage of the first capacitor is pulled up to the second voltage; or

[0068] When the control terminal of the third control switch S3 is turned off in response to receiving the seventh sub-signal, and the control terminal of the fourth control switch S4 is turned on in response to receiving the eighth sub-signal, the voltage at the first terminal of the high electron mobility transistor is pulled to the third voltage.

[0069] When the control terminal of the third control switch S3 responds to the receipt of the ninth sub-signal and controls the third control switch S3 to turn off, and the control terminal of the fourth control switch responds to the receipt of the tenth sub-signal and controls the fourth control switch S4 to turn off, the second control module disconnects the electrical connection with the high electron mobility transistor.

[0070] This embodiment of the application sets a second control module including a third signal terminal 501, a third control switch S3, a fourth control switch S4, and a fourth signal terminal 502. Simultaneously, it sets a second control signal including a fifth and a sixth sub-signal, and a third control signal including a seventh and an eighth sub-signal. This allows the third control switch S3 and the fourth control switch S4 to be turned on or off based on different control signals, causing the second control module to output a second voltage from the third signal terminal 501 or a third voltage from the fourth signal terminal 502. Simultaneously, the third control switch S3 and the fourth control switch S4 can be turned off based on different control signals, cutting off the electrical connection between the second control module and the first terminal of the high electron mobility transistor. This ensures that during hard-switching testing, the first terminal of the high electron mobility transistor is subjected to a high voltage and high current environment.

[0071] In some embodiments, the third control switch includes a fourth MOSFET or a fifth MOSFET, and the fourth control switch includes a sixth MOSFET;

[0072] The control terminal of the third control switch is the gate of the fourth MOSFET, the first terminal of the third control switch is the drain of the fourth MOSFET, and the second terminal of the third control switch is the source of the fourth MOSFET; or

[0073] The control terminal of the third control switch is the gate of the fifth MOS transistor, the first terminal of the third control switch is the source of the fifth MOS transistor, and the second terminal of the third control switch is the drain of the fifth MOS transistor.

[0074] The control terminal of the fourth control switch is the gate of the sixth MOS transistor, the first terminal of the fourth control switch is the drain of the sixth MOS transistor, and the second terminal of the fourth control switch is the source of the sixth MOS transistor.

[0075] The fourth MOSFET can be an N-type MOSFET, the fifth MOSFET can be a P-type MOSFET, and the sixth MOSFET can be an N-type MOSFET.

[0076] This application embodiment flexibly utilizes either P-type or N-type MOS transistors by setting a third control switch, which can improve the flexibility of circuit setup while achieving two different tests based on the above-mentioned resistor determination circuit.

[0077] It is conceivable that the second control module may include a second control chip, a third signal terminal, and a fourth signal terminal. Through the gating function of the second control chip, the second voltage through the third signal terminal, the third voltage through the fourth signal terminal, or the disconnection of the electrical connection with the high electron mobility transistor can be achieved.

[0078] In some embodiments, such as Figure 5 As shown, the resistance determination circuit also includes a clamping module 503. The first terminal of the clamping module 503 is electrically connected to the first terminal of the high electron mobility transistor, and the second terminal of the clamping module 503 is electrically connected to the second terminal of the high electron mobility transistor. The clamping module is also electrically connected to the load.

[0079] In some instances, the load can be an oscilloscope. The first input terminal of the clamping module 503 is electrically connected to the first terminal of the high electron mobility transistor, the second input terminal of the clamping module 503 is electrically connected to the second terminal of the high electron mobility transistor, and the output terminal of the clamping module 503 is electrically connected to the load.

[0080] To improve the accuracy of resistance testing of high electron mobility transistors, a clamping module 503 can be set. The clamping module 503 is used to output a first value when the voltage between the first terminal and the second terminal of the high electron mobility transistor is detected to be greater than a threshold.

[0081] The clamping module 503 is also configured to output a voltage equal to the voltage between the first and second terminals of the high electron mobility transistor when the voltage between the first and second terminals of the high electron mobility transistor is less than or equal to a threshold.

[0082] By setting the clamping module 503 in this embodiment, it is possible to ensure that the on-state voltage drop of the high electron mobility transistor can be measured using a sufficiently high oscilloscope, thereby making the resistance of the high electron mobility transistor obtained based on the above-mentioned resistance determination circuit more accurate.

[0083] In some embodiments, such as Figure 6 As shown, the clamping module includes a fifth control switch S5, a power supply, a first diode D1, a second diode D2, a first Zener diode Z1, and a second capacitor C2.

[0084] The control terminal of the fifth control switch S5 is electrically connected to the positive terminal of the power supply. The first terminal of the fifth control switch S5 is electrically connected to the first terminal of the high electron mobility transistor. The second terminal of the fifth control switch S5 is electrically connected to the anode of the first diode D1. The cathode of the first diode D1 is electrically connected to the first terminal of the first Zener diode Z1. The second terminal of the first Zener diode Z1 is electrically connected to both the negative terminal of the power supply and the second terminal of the high electron mobility transistor. The second capacitor C2 is connected in parallel with the first Zener diode Z1. The cathode of the second diode D2 is electrically connected to the second terminal of the fifth control switch S5. The anode of the second diode D2 is electrically connected to both the negative terminal of the power supply and the second terminal of the high electron mobility transistor.

[0085] Here, if the voltage received at the first terminal of the high electron mobility transistor is greater than the threshold, the fifth control module will remain off, thus enabling the voltage output of the clamping module to be the first value.

[0086] Here, the first value is mainly affected by the threshold voltage of the fifth control switch S and the voltage of the power supply.

[0087] Because the high electron mobility transistor receives a wide range of voltage values, this can cause the output voltage of the clamping module to oscillate, affecting the accuracy of the resistance determination of the high electron mobility transistor. To prevent this oscillation, a first diode and a first Zener diode can be connected in series, and a second diode can be added. Furthermore, by connecting a second capacitor C2 in parallel with the first Zener diode, the first Zener diode can be protected.

[0088] This embodiment of the application, by setting a clamping module including a five-control switch S5, a power supply, a first diode D1, a second diode D2, a first Zener diode Z1, and a second capacitor C2, can avoid oscillation of the output voltage of the clamping module and improve the accuracy of the resistance of the high electron mobility transistor obtained based on the above-mentioned resistance determination circuit.

[0089] In some embodiments, the fifth control switch S5 includes a seventh MOSFET or an eighth MOSFET;

[0090] The control terminal of the fifth control switch is the gate of the seventh MOS transistor, the first terminal of the fifth control switch is the source of the seventh MOS transistor, and the second terminal of the fifth control switch is the drain of the seventh MOS transistor; or

[0091] The control terminal of the fifth control switch is the gate of the eighth MOS transistor, the first terminal of the fifth control switch is the drain of the eighth MOS transistor, and the second terminal of the fifth control switch is the source of the eighth MOS transistor.

[0092] Here, the seventh MOS is an N-type MOS transistor. When the fifth control switch is also an N-type MOS transistor, the control terminal of the fifth control switch is the gate, the first terminal of the fifth control switch is the drain, and the second terminal of the fifth control switch is the source; or

[0093] The eighth MOS is a P-type MOS transistor. The control terminal of the fifth control switch is the gate, the first terminal of the fifth control switch is the source, and the second terminal of the fifth control switch is the drain.

[0094] The embodiments of this application improve the flexibility of the resistance determination circuit by setting a fifth control switch, which may include a seventh MOSFET or an eighth MOSFET.

[0095] In some embodiments, such as Figure 7 As shown, the resistor determination circuit also includes a first resistor R1;

[0096] The first terminal of the first resistor R1 is electrically connected to the second terminal of the high electron mobility transistor, and the second terminal of the first resistor R1 is electrically connected to the reference voltage terminal.

[0097] A first resistor can be set between the second terminal of the high electron mobility transistor and the reference voltage terminal. The voltage across the first resistor can be detected by a galvanometer. Based on the detected voltage across the first resistor and the resistance value of the first resistor, the output current of the second terminal of the high electron mobility transistor can be determined. This can improve the accuracy of the determined high electron mobility transistor resistance while reducing circuit cost.

[0098] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this application (including the claims) is limited to these examples; within the framework of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the embodiments of this application as described above, which are not provided in the details for the sake of brevity.

[0099] The functional blocks shown in the above-described structural diagram can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc. When implemented in software, the elements of this application are programs or code segments used to perform the required tasks. Programs or code segments can be stored on a machine-readable medium or transmitted over a transmission medium or communication link via data signals carried on a carrier wave. "Machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, etc. Code segments can be downloaded via computer networks such as the Internet, intranets, etc.

[0100] It should also be noted that the exemplary embodiments mentioned in this application describe methods or apparatuses based on a series of steps or devices. However, this application is not limited to the order of the above steps; that is, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0101] The aspects of this application have been described above with reference to flowchart illustrations and / or block diagrams of methods, apparatus (devices), and computer program products according to embodiments of this application. It should be understood that each block in the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to produce a machine such that these instructions, executable via the processor of the computer or other programmable data processing apparatus, enable the implementation of the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field-programmable logic circuit. It is also understood that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can also be implemented by dedicated hardware performing the specified functions or actions, or can be implemented by a combination of dedicated hardware and computer instructions.

[0102] The above description is merely a specific embodiment of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the devices, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

Claims

1. A resistance determination circuit, characterized in that, include: A first control module is electrically connected to the control terminal of a high electron mobility transistor. A second control module is electrically connected to the first terminal of the high electron mobility transistor; the second terminal of the high electron mobility transistor is electrically connected to the reference voltage terminal. A first capacitor, the first terminal of which is electrically connected to the first terminal of the high electron mobility transistor and the second control module, and the second terminal of which is electrically connected to the reference voltage terminal; When the first control module outputs a first voltage in response to receiving a first control signal, and the second control module outputs a second voltage in response to receiving a second control signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn off, and the first terminal of the high electron mobility transistor turns off to withstand high voltage in response to the second voltage output by the second control module. When the second control module outputs a third voltage in response to receiving a third control signal, and the first control module outputs a fourth voltage in response to receiving a fourth control signal, the voltage at the first terminal of the high electron mobility transistor is pulled to the third voltage. The control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn on. The resistance of the high electron mobility transistor is determined by detecting the voltage between the first terminal and the second terminal of the high electron mobility transistor, and the current output from the second terminal of the high electron mobility transistor; or When the first control module outputs a first voltage in response to receiving a first control signal, and the second control module outputs a second voltage in response to receiving a second control signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn off, and the first terminal of the high electron mobility transistor turns off high voltage in response to the second voltage output by the second control module, and the voltage of the first capacitor is pulled up to the second voltage. When the second control module disconnects the electrical connection with the high electron mobility transistor in response to receiving the fifth control signal, and the first control module outputs a fourth voltage in response to receiving the fourth control signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to conduct, and the first capacitor discharges through the high electron mobility transistor. After a preset time period, when the second control module outputs a third voltage in response to receiving the third control signal, the voltage at the first terminal of the high electron mobility transistor is pulled to the third voltage. The resistance of the high electron mobility transistor is determined by detecting the voltage between the first terminal and the second terminal of the high electron mobility transistor, as well as the current output from the second terminal of the high electron mobility transistor.

2. The resistance determination circuit according to claim 1, characterized in that, The first control module includes a first signal terminal, a first control switch, a second control switch, and a second signal terminal; the first control signal includes a first sub-signal and a second sub-signal; the fourth control signal includes a third sub-signal and a fourth sub-signal. The first terminal of the first control switch is electrically connected to the first signal terminal, and the second terminal of the first control switch is electrically connected to the first terminal of the second control switch and the control terminal of the high electron mobility transistor. The second terminal of the second control switch is electrically connected to the second signal terminal; When the control terminal of the first control switch controls the first control switch to turn off in response to receiving the first sub-signal, and the control terminal of the second control switch controls the second control switch to turn on in response to receiving the second sub-signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn off in response to receiving the first voltage output from the second signal terminal. or When the control terminal of the second control switch controls the third control switch to turn off in response to receiving the third sub-signal, and the control terminal of the first control switch controls the fourth control switch to turn on in response to receiving the fourth sub-signal, the control terminal of the high electron mobility transistor controls the high electron mobility transistor to turn on in response to receiving the fourth voltage output from the first signal terminal.

3. The resistance determination circuit according to claim 1, characterized in that, The second control module includes a third signal terminal, a third control switch, a fourth control switch, and a fourth signal terminal; the second control signal includes a fifth sub-signal and a sixth sub-signal; the third control signal includes a seventh sub-signal and an eighth sub-signal; the fifth control signal includes a ninth sub-signal and a tenth sub-signal; The first terminal of the third control switch is electrically connected to the third signal terminal, and the second terminal of the third control switch is electrically connected to the first terminal of the fourth control switch and the first terminal of the high electron mobility transistor. The second terminal of the fourth control switch is electrically connected to the fourth signal terminal; When the control terminal of the fourth control switch turns off in response to receiving the sixth sub-signal, and the control terminal of the third control switch turns on in response to receiving the fifth sub-signal, the first terminal of the high electron mobility transistor turns off high voltage in response to receiving the second voltage output from the third signal terminal, and the voltage of the first capacitor is pulled up to the second voltage; or When the control terminal of the third control switch turns off in response to receiving the seventh sub-signal, and the control terminal of the fourth control switch turns on in response to receiving the eighth sub-signal, the voltage at the first terminal of the high electron mobility transistor is pulled to the third voltage; or When the control terminal of the third control switch controls the third control switch to turn off in response to receiving the ninth sub-signal, and the control terminal of the fourth control switch controls the fourth control switch to turn off in response to receiving the tenth sub-signal, the second control module disconnects the electrical connection with the high electron mobility transistor.

4. The resistance determination circuit according to claim 1, characterized in that, It also includes a clamping module, the first end of which is electrically connected to the first end of the high electron mobility transistor, and the second end of which is electrically connected to the second end of the high electron mobility transistor; The clamping module is electrically connected to the load.

5. The resistance determination circuit according to claim 4, characterized in that, The clamping module includes a fifth control switch, a power supply, a first diode, a second diode, a first Zener diode, and a second capacitor; The control terminal of the fifth control switch is electrically connected to the positive terminal of the power supply, the first terminal of the fifth control switch is electrically connected to the first terminal of the high electron mobility transistor, and the second terminal of the fifth control switch is electrically connected to the anode of the first diode. The cathode of the first diode is electrically connected to the first terminal of the first Zener diode, and the second terminal of the first Zener diode is electrically connected to both the negative terminal of the power supply and the second terminal of the high electron mobility transistor. The second capacitor is connected in parallel with the first Zener diode; The cathode of the second diode is electrically connected to the second terminal of the fifth control switch, and the anode of the second diode is electrically connected to both the negative terminal of the power supply and the second terminal of the high electron mobility transistor.

6. The resistance determination circuit according to claim 1, characterized in that, It also includes the first resistor; The first end of the first resistor is electrically connected to the second end of the high electron mobility transistor, and the second end of the first resistor is electrically connected to the reference voltage terminal.

7. The resistance determination circuit according to claim 2, characterized in that, The first control switch includes a first MOSFET or a second MOSFET, and the second control switch includes a third MOSFET; The control terminal of the first control switch is the gate of the first MOS transistor, the first terminal of the first control switch is the drain of the first MOS transistor, and the second terminal of the first control switch is the source of the first MOS transistor. or The control terminal of the first control switch is the gate of the second MOS transistor, the first terminal of the first control switch is the source of the second MOS transistor, and the second terminal of the first control switch is the drain of the second MOS transistor. The control terminal of the second control switch is the gate of the third MOS transistor, the first terminal of the second control switch is the drain of the third MOS transistor, and the second terminal of the second control switch is the source of the third MOS transistor.

8. The resistance determination circuit according to claim 3, characterized in that, The third control switch includes a fourth MOSFET or a fifth MOSFET, and the fourth control switch includes a sixth MOSFET; The control terminal of the third control switch is the gate of the fourth MOS transistor, the first terminal of the third control switch is the drain of the fourth MOS transistor, and the second terminal of the third control switch is the source of the fourth MOS transistor. or The control terminal of the third control switch is the gate of the fifth MOS transistor, the first terminal of the third control switch is the source of the fifth MOS transistor, and the second terminal of the third control switch is the drain of the fifth MOS transistor. The control terminal of the fourth control switch is the gate of the sixth MOS transistor, the first terminal of the fourth control switch is the drain of the sixth MOS transistor, and the second terminal of the fourth control switch is the source of the sixth MOS transistor.

9. The resistance determination circuit according to claim 3, characterized in that, The fifth control switch includes a seventh MOSFET or an eighth MOSFET; The control terminal of the fifth control switch is the gate of the seventh MOS transistor, the first terminal of the fifth control switch is the source of the seventh MOS transistor, and the second terminal of the fifth control switch is the drain of the seventh MOS transistor. or The control terminal of the fifth control switch is the gate of the eighth MOS transistor, the first terminal of the fifth control switch is the drain of the eighth MOS transistor, and the second terminal of the fifth control switch is the source of the eighth MOS transistor.

10. A resistance determination system, characterized in that, include: High electron mobility transistor; The resistance determination circuit as described in any one of claims 1 to 9.

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