Metal grating manufacturing method and metal grating

Abstract

The application provides a metal grating manufacturing method and a metal grating. The method comprises the following steps: sequentially forming a metal layer, a spin-on carbon layer, a first dielectric layer, a SiARC layer and a photoresist layer on a substrate; developing after exposure by using a DUV photoetching machine, so that the photoresist layer contains photoresist with a preset line width; etching the SiARC layer and the first dielectric layer, so that the SiARC layer contains SiARC with the preset line width, and the first dielectric layer contains first dielectric with the preset line width; etching the SiARC, so that the spin-on carbon layer contains spin-on carbon with the preset line width, growing second dielectric with a preset thickness on the surface of the first dielectric and the spin-on carbon, etching the first dielectric and etching the second dielectric to a distance from the metal layer greater than the thickness of the spin-on carbon layer; etching the spin-on carbon, etching the metal layer, so that the metal layer contains metal with the preset line width, removing the second dielectric, and obtaining a metal grating with a preset period. The method can improve the manufacturing efficiency of a grating with a period less than 100 nm and reduce the manufacturing cost.

Description

Technical Field

[0001] The present invention relates to the field of grating technology, and in particular to a metal grating manufacturing method and the metal grating. Background Art

[0002] Nanostructured polarization and filtering devices based on subwavelength gratings have high light energy utilization, adjustable bandwidth, and can be prepared using micro-nano manufacturing technologies. They can be used in future new flat-panel displays, green nanoprinting, and security and anti-counterfeiting fields. Metal grating polarizers with good performance in the visible light band have a very small period, usually less than 100nm, making them difficult to process and manufacture. The development of micro-nanofabrication technologies such as electron beam exposure, reactive ion etching, and nanoimprinting has made it possible to process gratings with periods less than 100nm. In the research field, electron beam lithography and ion beam lithography can be used for nanofabrication, but due to the interaction between charged particles, electron beam lithography can only etch a single beam, which is extremely inefficient. Nanoimprint molding is an important nanotechnology for achieving mass production. It can achieve low-cost quantitative production, but it requires the manufacture of different nanostructure templates. Ion beam lithography and electron beam lithography are very time-consuming and expensive, and can only produce small-sized nanostructure templates. Summary of the Invention

[0003] The object of the present invention is to provide a method for manufacturing a metal grating and a metal grating, so as to solve the technical problems in the prior art of low manufacturing efficiency and high cost of gratings with a period less than 100 nm.

[0004] The technical solution of the present invention is as follows: a method for manufacturing a metal grating is provided, comprising:

[0005] forming a metal layer, a spin-on carbon layer, a first dielectric layer, a SiARC layer and a photoresist layer on the substrate in sequence;

[0006] Using a DUV photolithography machine to perform exposure and development, so that the photoresist layer contains photoresist with a preset line width, and etching the SiARC layer and the first dielectric layer so that the SiARC layer contains SiARC with the preset line width, and the first dielectric layer contains the first dielectric with the preset line width;

[0007] Etching the SiARC so that the spin-on carbon layer includes spin-on carbon with the preset line width, growing a second dielectric with a preset thickness on the surfaces of the first dielectric and the spin-on carbon, etching the first dielectric and etching a portion of the second dielectric that is greater than the thickness of the spin-on carbon layer and is away from the metal layer;

[0008] The spin-on carbon is etched away, the metal layer is etched so that the metal layer contains metal with a preset line width, and the second medium is removed to obtain a metal grating with a preset period.

[0009] Furthermore, a metal layer, a spin-on carbon layer, a first dielectric layer, a SiARC layer, and a photoresist layer are sequentially formed on the substrate, including:

[0010] Metal is deposited on a substrate to form a metal layer, and a spin-on carbon layer is formed on a side of the metal layer away from the substrate using a coating and developing machine; the first medium is deposited on a side of the spin-on carbon layer away from the metal layer using LPCVD or PECVD to form a first dielectric layer; a SiARC layer is formed on a side of the first dielectric layer away from the spin-on carbon layer using a coating and developing machine, and a photoresist layer is formed on a side of the SiARC layer away from the first dielectric layer.

[0011] Furthermore, the method includes depositing metal on a substrate to form a metal layer, forming a spin-on carbon layer on a side of the metal layer away from the substrate using a coating and developing machine; depositing the first dielectric on a side of the spin-on carbon layer away from the metal layer using LPCVD or PECVD to form a first dielectric layer; forming a SiARC layer on a side of the first dielectric layer away from the spin-on carbon layer using a coating and developing machine, and forming a photoresist layer on a side of the SiARC layer away from the first dielectric layer, including:

[0012] A metal is deposited on a substrate to form a metal layer with a thickness of 10nm-100nm, and a spin-on carbon layer with a thickness of 60nm-200nm is formed on a side of the metal layer away from the substrate using a coating and developing machine; the first dielectric is deposited on a side of the spin-on carbon layer away from the metal layer using LPCVD or PECVD to form a first dielectric layer with a thickness of 20nm-200nm; a SiARC layer with a thickness of 20nm-40nm is formed on a side of the first dielectric layer away from the spin-on carbon layer using a coating and developing machine, and a photoresist layer with a thickness of 80nm-150nm is formed on a side of the SiARC layer away from the first dielectric layer.

[0013] Furthermore, etching the SiARC layer and the first dielectric layer includes: etching the SiARC layer and the first dielectric layer using a plasma machine and F-based gas.

[0014] Further, etching away the SiARC so that the spin-on carbon layer contains spin-on carbon with the preset line width, comprising:

[0015] The SiARC is etched away in an O plasma using a plasma machine, and the spin-on carbon layer includes spin-on carbon with a line width of 40 nm to 100 nm.

[0016] Furthermore, growing a second medium with a preset thickness on the surface of the first medium and the spin-coated carbon comprises:

[0017] A second medium with a thickness of 5 nm to 40 nm is grown on the surfaces of the first medium and the spin-coated carbon by using an atomic layer deposition device.

[0018] Further, etching away the first medium and etching away a portion of the second medium that is farther from the metal layer than the thickness of the spin-on carbon layer, comprises:

[0019] The first medium is etched away by using a plasma machine and a F-based gas, and a portion of the second medium whose distance from the metal layer is greater than the thickness of the spin-on carbon layer is etched away.

[0020] Further, etching away the spin-on carbon and etching the metal layer so that the metal layer contains metal with a preset line width, comprising:

[0021] The spin-on carbon is etched away using a plasma machine and O plasma, and the metal layer is etched using a plasma machine and Cl-based gas, so that the metal layer contains metal with a preset line width.

[0022] Furthermore, removing the second medium to obtain a metal grating of a preset period includes: removing the second medium by a dry method or a wet method to obtain a metal grating of a preset period.

[0023] Another technical solution of the present invention is as follows: a metal grating is further provided. The metal grating is manufactured by the metal grating manufacturing method described in any of the above technical solutions. The metal grating includes a substrate and a metal with a preset line width on the substrate.

[0024] The beneficial effects of the present invention are as follows: a metal layer, a spin-on carbon layer, a first dielectric layer, a SiARC layer, and a photoresist layer are sequentially formed on a substrate; exposure is performed using a DUV photolithography machine and then development is performed, so that the photoresist layer contains photoresist with a preset line width; the SiARC layer and the first dielectric layer are etched, so that the SiARC layer contains SiARC with the preset line width, and the first dielectric layer contains the first dielectric with the preset line width; the SiARC is etched away, so that the spin-on carbon layer contains spin-on carbon with the preset line width, a second dielectric with a preset thickness is grown on the surfaces of the first dielectric and the spin-on carbon, the first dielectric is etched away, and a portion of the second dielectric that is greater than the thickness of the spin-on carbon layer from the metal layer is etched away; the spin-on carbon is etched away, the metal layer is etched away, so that the metal layer contains metal with the preset line width, and the second dielectric is removed to obtain a metal grating with a preset period. The above technical solution can improve the production efficiency of gratings with a period less than 100 nm and reduce the production cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1A schematic flow chart of a method for manufacturing a metal grating according to an embodiment of the present invention;

[0026] Figure 2 A schematic diagram of the state after step S101 is completed according to an embodiment of the present invention;

[0027] Figure 3 A schematic diagram of the state after step S1021 is completed according to an embodiment of the present invention;

[0028] Figure 4 A schematic diagram of the state after step S1022 is completed according to an embodiment of the present invention;

[0029] Figure 5 A schematic diagram of the state after step S1031 is completed according to an embodiment of the present invention;

[0030] Figure 6 A schematic diagram of the state after step S1032 is completed provided in an embodiment of the present invention;

[0031] Figure 7 A schematic diagram of the state after step S1033 is completed according to an embodiment of the present invention;

[0032] Figure 8 A schematic diagram of the state after step S1041 is completed according to an embodiment of the present invention;

[0033] Figure 9 A schematic diagram of the state after step S1042 is completed according to an embodiment of the present invention;

[0034] Figure 10 A schematic structural diagram of a metal grating provided in an embodiment of the present invention.

[0035] Reference numerals:

[0036] 10 - substrate; 20 - metal layer; 30 - spin-on carbon layer; 40 - first dielectric layer; 50 - SiARC layer; 60 - photoresist layer; 70 - second dielectric layer. DETAILED DESCRIPTION

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0038] It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, such that the embodiments of the present invention described herein can be practiced in an order other than that illustrated or described herein.

[0039] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present invention. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute a separate or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0040] Figure 1 It is a flow chart of the method for manufacturing a metal grating according to an embodiment of the present invention. It should be noted that the method of the present invention is not limited to the method of manufacturing a metal grating according to an embodiment of the present invention. Figure 1 The process sequence shown is limited. Figure 1 As shown, the metal grating manufacturing method mainly includes the following steps:

[0041] S101 , forming a metal layer 20 , a spin-on carbon layer 30 , a first dielectric layer 40 , a SiARC layer 50 (anti-reflective coating containing Si) and a photoresist layer 60 in sequence on a substrate 10 ;

[0042] In some embodiments, a metal layer 20, a spin-on carbon layer 30, a first dielectric layer 40, a SiARC layer 50, and a photoresist layer 60 are sequentially formed on a substrate 10, including:

[0043] A metal is deposited on a substrate 10 to form a metal layer 20, and a spin-on carbon layer 30 is formed on a side of the metal layer 20 away from the substrate 10 using a coating and developing machine. The first dielectric is deposited on a side of the spin-on carbon layer 30 away from the metal layer 20 using LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition) to form a first dielectric layer 40. A SiARC layer 50 is formed on a side of the first dielectric layer 40 away from the spin-on carbon layer 30 using a coating and developing machine, and a photoresist layer 60 is formed on a side of the SiARC layer 50 away from the first dielectric layer 40.

[0044] In some embodiments, the process of depositing metal on a substrate 10 to form a metal layer 20, forming a spin-on carbon layer 30 on a side of the metal layer 20 away from the substrate 10 using a coating and developing machine; depositing the first dielectric on a side of the spin-on carbon layer 30 away from the metal layer 20 using LPCVD or PECVD to form a first dielectric layer 40; forming a SiARC layer 50 on a side of the first dielectric layer 40 away from the spin-on carbon layer 30 using a coating and developing machine, and forming a photoresist layer 60 on a side of the SiARC layer 50 away from the first dielectric layer 40 includes:

[0045] A metal is deposited on a substrate 10 to form a metal layer 20 with a thickness of 10 nm to 100 nm, and a spin-on carbon layer 30 with a thickness of 60 nm to 200 nm is formed on a side of the metal layer 20 away from the substrate 10 using a coating and developing machine. The first dielectric is deposited on a side of the spin-on carbon layer 30 away from the metal layer 20 using LPCVD or PECVD to form a first dielectric layer 40 with a thickness of 20 nm to 200 nm. A SiARC layer 50 with a thickness of 20 nm to 40 nm is formed on a side of the first dielectric layer 40 away from the spin-on carbon layer 30 using a coating and developing machine, and a photoresist layer 60 with a thickness of 80 nm to 150 nm is formed on a side of the SiARC layer 50 away from the first dielectric layer 40.

[0046] In a specific embodiment, the state diagram after step S101 is completed is as follows: Figure 2 As shown, the substrate 10 includes Si, sapphire, SiC or glass. Metal (which may be Al) is deposited on the substrate 10 by electron beam evaporation or magnetron sputtering to form a metal layer 20 with a thickness of 10 nm to 100 nm. A spin-on carbon (SOC) layer with a thickness of 60 nm to 200 nm is formed on the side of the metal layer 20 away from the substrate 10 using a coating and developing machine. The first dielectric is deposited on the side of the SOC layer 30 away from the metal layer 20 using LPCVD or PECVD to form a first dielectric layer 40 with a thickness of 20 nm to 200 nm. The first dielectric may be SiN, SiON, SiO2 or Al2O3. The first dielectric layer 40 may serve as a barrier layer to facilitate selective etching. SiARC and photoresist (PR) are spin-coated in sequence on the side of the first dielectric layer 40 away from the SOC layer 30 using a coating and developing machine to form a SiARC layer 50 with a thickness of 20 nm to 40 nm and a photoresist layer 60 with a thickness of 80 nm to 150 nm. Figure 2 The middle medium 1 is the first medium.

[0047] S102, performing exposure and development using a DUV photolithography machine, so that the photoresist layer 60 includes a photoresist with a preset line width, and etching the SiARC layer 50 and the first dielectric layer 40, so that the SiARC layer 50 includes a SiARC with the preset line width, and the first dielectric layer 40 includes a first dielectric with the preset line width;

[0048] In a specific embodiment, exposure is performed using a DUV lithography machine and then development is performed as step S1021. A schematic diagram of the state after step S1021 is completed is shown as follows: Figure 3 As shown, the photoresist layer 60 includes a photoresist with a preset line width. Developing is performing a development process. The preset line width of the photoresist can be 40nm-100nm, such as 50nm, and the spaceCD (groove line width) can be 80nm-160nm, such as 100nm.

[0049] In some embodiments, etching the SiARC layer 50 and the first dielectric layer 40 includes etching the SiARC layer 50 and the first dielectric layer 40 using a plasma machine and a F-based gas.

[0050] In a specific embodiment, the SiARC layer 50 and the first dielectric layer 40 are etched using a plasma machine and a F-based gas, so that the SiARC layer 50 includes a SiARC having the preset line width, and the first dielectric layer 40 includes a first dielectric having the preset line width, and etching the SiARC layer 50 and the first dielectric layer 40 is performed as step S1022. A schematic diagram of the state after step S1022 is completed is shown as follows. Figure 4 The plasma machine may be an inductively coupled plasma (ICP) machine.

[0051] S103, etching away the SiARC so that the spin-on carbon layer 30 includes spin-on carbon with the preset line width, growing a second dielectric with a preset thickness on the surfaces of the first dielectric and the spin-on carbon, etching away the first dielectric and etching away a portion of the second dielectric that is greater than the thickness of the spin-on carbon layer 30 and is away from the metal layer 20;

[0052] In some embodiments, etching away the SiARC so that the spin-on-carbon layer 30 includes spin-on-carbon with the preset line width includes:

[0053] The SiARC is etched away using a plasma machine under O plasma, and the spin-on carbon layer 30 includes spin-on carbon with a line width (CD) of 40 nm to 100 nm.

[0054] In a specific embodiment, an ICP machine is used to perform etching under O plasma. After the etching is completed, a wet method is used to remove the residual polymer using a degumming solution to etch away the SiARC so that the spin-on carbon layer 30 includes the spin-on carbon with the preset line width as step S1031. A schematic diagram of the state after the completion of step S1031 is shown as follows. Figure 5 The preset line width of the spin-coated carbon can also be 40 nm-100 nm, for example, 50 nm.

[0055] In some embodiments, growing a second medium with a predetermined thickness on the surface of the first medium and the spin-on carbon comprises:

[0056] A second medium with a thickness of 5 nm to 40 nm is grown on the surfaces of the first medium and the spin-coated carbon by using an atomic layer deposition device.

[0057] In a specific embodiment, a second dielectric layer 70 can be formed by growing a second dielectric with a preset thickness on the surface. The preset thickness can be 5 nm to 40 nm, for example, 25 nm. The second dielectric with a thickness of 25 nm is grown on the surface of the first dielectric and the spin-coated carbon by an atomic layer deposition device (ALD). The second dielectric with a preset thickness is grown on the surface of the first dielectric and the spin-coated carbon as step S1032. A schematic diagram of the state after step S1032 is completed is shown as follows. Figure 6 As shown, Figure 6 The middle medium 2 is the second medium, wherein the second medium can be SiN, SiON, SiO2 or Al2O3.

[0058] In some embodiments, etching away the first dielectric and etching away a portion of the second dielectric that is farther from the metal layer 20 than the thickness of the spin-on carbon layer 30 includes:

[0059] The first dielectric is etched away using a plasma machine and a F-based gas, and a portion of the second dielectric that is farther from the metal layer 20 than the thickness of the spin-on carbon layer 30 is etched away.

[0060] In a specific embodiment, an ICP device is used to introduce F-based gas to etch away the first dielectric and the second dielectric cap layer on top of the first dielectric, so as to etch away the first dielectric and etch away the portion of the second dielectric that is greater than the thickness of the spin-on carbon layer 30 from the metal layer 20 as step S1033. A schematic diagram of the state after step S1033 is completed is shown as follows: Figure 7 shown.

[0061] S104 , etching away the spin-on carbon, etching the metal layer 20 so that the metal layer 20 contains metal with a preset line width, removing the second medium, and obtaining a metal grating with a preset period.

[0062] In some embodiments, etching away the spin-on carbon and etching the metal layer 20 so that the metal layer 20 includes a metal having a preset line width, includes:

[0063] The spin-on carbon is etched away using a plasma machine and O plasma, and the metal layer 20 is etched using a plasma machine and Cl-based gas, so that the metal layer 20 includes metal with a preset line width.

[0064] In a specific embodiment, an ICP device is used to etch away the SOC using O plasma. At this time, only the second dielectric remains on the metal layer 20, and the spin-on carbon is etched away as step S1041. A schematic diagram of the state after step S1041 is completed is shown as follows: Figure 8 The line width of the second medium may be 5 nm to 40 nm, for example, 25 nm, and the space CD may be 40 nm to 100 nm, for example, 50 nm.

[0065] In a specific embodiment, an ICP device is used to etch the metal layer 20 using a Cl-based gas. The metal layer 20 includes a metal with a preset line width. The preset line width can be 25 nm. The etching of the metal layer 20 is performed as step S1042. A schematic diagram of the state after step S1042 is completed is shown as follows: Figure 9 shown.

[0066] In some embodiments, removing the second medium to obtain a metal grating of a preset period includes: removing the second medium by a dry method or a wet method to obtain a metal grating of a preset period.

[0067] In a specific embodiment, the second medium is removed by a dry method or a wet method to obtain a metal grating with a preset period. The structural diagram of the metal grating is as follows: Figure 10 As shown, the metal grating can be a metal grating with a period of 75nm.

[0068] The metal grating manufacturing method provided by the embodiment of the present invention comprises the following steps: forming a metal layer 20, a spin-on carbon layer 30, a first dielectric layer 40, a SiARC layer 50, and a photoresist layer 60 on a substrate 10 in sequence; performing exposure and development using a DUV lithography machine, so that the photoresist layer 60 contains a photoresist with a preset line width; etching the SiARC layer 50 and the first dielectric layer 40, so that the SiARC layer 50 contains a SiARC with the preset line width, and the first dielectric layer 40 contains a first dielectric with the preset line width; etching away the SiARC layer 50; and finally, etching away the SiARC layer 50. iARC, so that the spin-on carbon layer 30 contains spin-on carbon with the preset line width, grow a second medium with a preset thickness on the surface of the first medium and the spin-on carbon, etch away the first medium and etch away the portion of the second medium that is greater than the thickness of the spin-on carbon layer 30 from the metal layer 20; etch away the spin-on carbon, etch the metal layer 20 so that the metal layer 20 contains metal with a preset line width, remove the second medium, and obtain a metal grating with a preset period; this can improve the production efficiency of gratings with a period less than 100nm and reduce the production cost.

[0069] The metal grating fabrication method provided in an embodiment of the present invention fabricates a small-period metal grating on a substrate 10 such as Si / sapphire / SiC / glass. A metal layer 20 is deposited on the substrate 10, and a carbon layer 30 is spin-coated on the metal layer 20. A first dielectric layer 40 is then deposited. DUV lithography can be used to form a photoresist layer 60 with a period of 150 nm. The first dielectric layer 40 is then etched. After the etching of the first dielectric layer 40 is completed, the photoresist layer 60 is removed. A second dielectric layer 70 is deposited using ALD. The second dielectric layer 70 is etched to stop at the metal layer 20 and the first dielectric layer 40, respectively. The cap layer second dielectric, the first dielectric layer 40, and the spin-coated carbon layer 30 are removed, respectively. The metal is etched to form a metal grating with a period of 75 nm. The period size and duty cycle of the grating can be determined by the initially designed size (preset line width) and the thickness of the ALD deposition (preset thickness).

[0070] An embodiment of the present invention provides a metal grating, which is manufactured by the metal grating manufacturing method described in any of the above embodiments. The metal grating includes a substrate 10 and a metal with a preset line width on the substrate 10. The structural diagram of the metal grating can be as follows: Figure 10 shown.

[0071] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0072] The above embodiments merely represent preferred embodiments of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art would be able to make various modifications and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be determined by the appended claims.

Claims

1. A method for manufacturing a metal grating, characterized in that: include: A metal layer, a spin-on carbon layer, a first dielectric layer, a SiARC layer, and a photoresist layer are sequentially formed on a substrate, wherein the metal layer, the spin-on carbon layer, the first dielectric layer, the SiARC layer, and the photoresist layer are sequentially formed on the substrate, comprising: Depositing metal on a substrate to form a metal layer with a thickness of 10 nm to 100 nm, forming a spin-on carbon layer with a thickness of 60 nm to 200 nm on a side of the metal layer away from the substrate using a coating and developing machine; depositing the first dielectric on a side of the spin-on carbon layer away from the metal layer using LPCVD or PECVD to form a first dielectric layer with a thickness of 20 nm to 200 nm; forming a SiARC layer with a thickness of 20 nm to 40 nm on a side of the first dielectric layer away from the spin-on carbon layer using a coating and developing machine, and forming a photoresist layer with a thickness of 80 nm to 150 nm on a side of the SiARC layer away from the first dielectric layer; Using a DUV photolithography machine to perform exposure and development, so that the photoresist layer includes photoresist with a first preset line width, and etching the SiARC layer and the first dielectric layer so that the SiARC layer includes SiARC with the first preset line width, and the first dielectric layer includes the first dielectric with the first preset line width; Using a plasma machine, etching away the SiARC under O plasma, and making the spin-on carbon layer include spin-on carbon with a line width of 40nm-100nm, growing a second dielectric with a thickness of 5nm-40nm on the surface of the first dielectric and the spin-on carbon using an atomic layer deposition device, etching away the first dielectric and etching away a portion of the second dielectric that is greater than the thickness of the spin-on carbon layer and is away from the metal layer; The spin-on carbon is etched away, the metal layer is etched so that the metal layer contains a metal with a second preset line width, and the second medium is removed to obtain a metal grating with a preset period.

2. The method for manufacturing a metal grating according to claim 1, wherein: Etching the SiARC layer and the first dielectric layer includes: etching the SiARC layer and the first dielectric layer using a plasma machine and a F-based gas.

3. The method for manufacturing a metal grating according to claim 1, wherein: Etching away the first medium and etching away a portion of the second medium that is farther from the metal layer than the thickness of the spin-on carbon layer, comprising: The first medium is etched away by using a plasma machine and a F-based gas, and a portion of the second medium whose distance from the metal layer is greater than the thickness of the spin-on carbon layer is etched away.

4. The method for manufacturing a metal grating according to claim 1, wherein: Etching the spin-on carbon and etching the metal layer so that the metal layer contains metal having a second preset line width, comprising: The spin-on carbon is etched away using a plasma machine and O plasma, and the metal layer is etched using a plasma machine and Cl-based gas, so that the metal layer contains metal with a second preset line width.

5. The method for manufacturing a metal grating according to claim 1, wherein: Removing the second medium to obtain a metal grating with a preset period includes: removing the second medium by a dry method or a wet method to obtain a metal grating with a preset period.

6. A metal grating, characterized in that: The metal grating is manufactured by the metal grating manufacturing method according to any one of claims 1 to 5, and the metal grating includes a substrate and a metal with a preset line width on the substrate.

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