RF front-end modules, RF power amplifiers and electronic devices

Abstract

The present application provides a radio frequency front-end module, which reduces the equivalent inductance of the first winding of the transformer by connecting a first primary coil and a second primary coil in parallel, thereby achieving the purpose of improving the impedance conversion ratio of the transformer, and further realizing high power output of the radio frequency front-end module under low voltage. By forming an LC circuit with the equivalent inductance of the first primary coil and / or the second primary coil and a first capacitor, fundamental impedance matching of the radio frequency front-end module is achieved without the need for additional inductance, and the matching bandwidth of the radio frequency front-end module is optimized.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module, a radio frequency power amplifier and an electronic device. Background Art

[0002] RF front-end modules (RFFEMs) play a crucial role in mobile communications. In mobile phones, tablets, and other mobile devices, RFFEMs are responsible for receiving and transmitting wireless signals, enabling communication with base stations. The rapid advancement of communication technology and the significant progress made in the electronics industry have placed higher demands on RFFEM design. The design of RFFEMs must not only meet low-voltage, high-power output requirements, but also ensure impedance matching and bandwidth at the RFFEM output. Summary of the Invention

[0003] The present application provides a radio frequency front-end module, a radio frequency power amplifier and an electronic device, which realize that the radio frequency front-end module can achieve broadband impedance matching at the output end of the radio frequency front-end module while achieving low voltage and high power output.

[0004] In a first aspect of the present application, a radio frequency front-end module is provided, comprising: a substrate, and a first chip, a first transformer and a first capacitor arranged on the substrate; a power amplifier circuit is provided on the first chip, the transformer comprises a first winding and a second winding coupled to each other, the output end of the power amplifier circuit is connected to the first end of the first winding, the second end of the first winding is grounded, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first winding comprises a first primary coil and a second primary coil connected in parallel; the first end of the first capacitor is connected to the first node of the first primary coil, and / or the first end of the first capacitor is connected to the second node of the second primary coil; wherein the first node of the first primary coil is any node on the first primary coil, the second node of the second primary coil is any node on the second primary coil, and the second end of the first capacitor is grounded.

[0005] Furthermore, the output end of the power amplifier circuit is connected to the first end of the first winding through at least two groups of bonding wires.

[0006] Furthermore, the at least two groups of bonding wires include a first bonding wire group and a second bonding wire group, the output end of the power amplifier circuit is connected to a first pad and a second pad of the first chip, the first pad is connected to the first primary coil through the first bonding wire group, and the second pad is connected to the second primary coil through the second bonding wire group.

[0007] Furthermore, the at least two groups of bonding wires include a first bonding wire group and a second bonding wire group, the output end of the power amplifier circuit is connected to the first pad of the first chip, the first pad is connected to the first primary coil through the first bonding wire group, and the first primary coil is connected to the second primary coil through the second bonding wire group.

[0008] Furthermore, the at least two groups of bonding wires include a first bonding wire group, a second bonding wire group and a third bonding wire group, the output end of the power amplifier circuit is connected to the first pad and the second pad of the first chip, the first pad is connected to the third node of the first primary coil through the first bonding wire group, the second pad is connected to the fourth node on the second primary coil through the second bonding wire group, and the first end of the first primary coil and the first end of the second primary coil are connected through the third bonding wire group.

[0009] Further, the third node of the first primary coil does not overlap with the first end of the first primary coil, and the fourth node on the second primary coil does not overlap with the first end of the second primary coil.

[0010] Furthermore, with the first end of the first primary coil as the starting point, the third node on the first primary coil is between the first end of the first primary coil and one quarter of the length of the first primary coil; with the first end of the second primary coil as the starting point, the fourth node on the second primary coil is between the first end of the second primary coil and one quarter of the length of the second primary coil.

[0011] Furthermore, with the first end of the first primary coil as the starting point, the first node of the first primary coil is between one-eighth of the length of the first primary coil and the midpoint of the first primary coil; with the first end of the second primary coil as the starting point, the second node of the second primary coil is between one-eighth of the length of the second primary coil and the midpoint of the second primary coil.

[0012] Furthermore, the RF front-end module also includes a control chip, which is arranged on the first side of the first chip, and the first side of the first chip is arranged along a first direction; the transformer is arranged on the second side of the first chip, and the second side of the first chip is arranged along a second direction; the first capacitor is arranged in the area between the first chip and the control chip and is arranged adjacent to the transformer, wherein the first direction and the second direction intersect.

[0013] Furthermore, the RF front-end module also includes a second capacitor, and the second end of the first winding is grounded through the second capacitor.

[0014] Furthermore, the second capacitor is arranged in a coupling center area formed by the first winding and the second winding.

[0015] Furthermore, the RF front-end module further includes a third capacitor disposed on the substrate, the first chip further includes a third pad, the output end of the power amplifier circuit is connected to the third pad, the third pad is connected to the first end of the third capacitor through a fourth bonding wire group, and the second end of the third capacitor is grounded;

[0016] Alternatively, the RF front-end module also includes a third capacitor and a second trace arranged on the substrate, the first chip also includes a third solder pad, the output end of the power amplifier circuit is connected to the third solder pad, the third solder pad is connected to the first end of the second trace through a fourth bonding wire group, the second end of the second trace is connected to the first end of the third capacitor, and the second end of the third capacitor is grounded.

[0017] Furthermore, the third capacitor is arranged in a lower area of the transformer.

[0018] Furthermore, the RF front-end module further includes a third capacitor and a third inductor provided on the first chip, a first end of the third inductor being connected to the output end of the power amplifier circuit, a second end of the third inductor being connected to the first end of the third capacitor, and a second end of the third capacitor being grounded;

[0019] Alternatively, the RF front-end module also includes a third capacitor arranged on the first chip, a first end of the third capacitor is connected to the output end of the power amplifier circuit, and a second end of the third inductor is connected to the ground through a fifth bonding wire group.

[0020] Furthermore, the turns ratio range of the first winding and the second winding is

[0021] [1.5:1,3.5:1].

[0022] Furthermore, the first end of the second winding is arranged outside the coupling center area formed by the first winding and the second winding, and the second end of the second winding is arranged within the coupling center area formed by the first winding and the second winding.

[0023] In a second aspect of the present application, a radio frequency power amplifier is provided, comprising: a power amplification circuit and an output impedance matching circuit, the output impedance matching circuit comprising a first capacitor, a transformer and a second capacitor, the transformer comprising a first winding and a second winding coupled to each other, the output end of the power amplification circuit being connected to the first end of the first winding, the second end of the first winding being grounded through the second capacitor, the first end of the first capacitor being connected to any node on the first winding; the second end of the first capacitor being grounded; the first end of the second winding being connected to the signal output end, and the second end of the second winding being grounded.

[0024] In a third aspect of the present application, a radio frequency power amplifier is provided, comprising: a power amplification circuit and an output impedance matching circuit, the output impedance matching circuit comprising a first inductor, a first capacitor, and a transformer, the transformer comprising a first winding and a second winding coupled to each other, the output end of the power amplification circuit being connected to the first end of the first winding through the first inductor, the second end of the first winding being grounded through the second capacitor, the first end of the first capacitor being connected to any node on the first winding; the second end of the first capacitor being grounded; the first end of the second winding being connected to the signal output end, and the second end of the second winding being grounded.

[0025] In a fourth aspect of the present application, a radio frequency power amplifier is provided, comprising: a power amplification circuit and an output impedance matching circuit, the output impedance matching circuit comprising a first inductor, a first capacitor, a transformer, and a second capacitor, the transformer comprising a first winding and a second winding coupled to each other, the output end of the power amplification circuit being connected to the first end of the first winding through the first inductor, the second end of the first winding being grounded through the second capacitor, the first end of the first capacitor being connected to any node on the first winding; the second end of the first capacitor being grounded; the first end of the second winding being connected to the signal output end, and the second end of the second winding being grounded.

[0026] Furthermore, the first winding includes a first primary coil and a second primary coil connected in parallel, the first end of the first capacitor is connected to a first node of the first primary coil, and the first node of the first primary coil is any node on the first primary coil;

[0027] And / or, the first end of the first capacitor is connected to the second node of the second primary coil, and the second node of the second primary coil is any node on the second primary coil.

[0028] Furthermore, the output impedance matching circuit is configured to achieve an impedance conversion ratio in the range of [25:1, 5:1].

[0029] Furthermore, with the first end of the first primary coil as the starting point, the first node of the first primary coil is between one-eighth of the length of the first primary coil and the midpoint of the first primary coil; with the first end of the second primary coil as the starting point, the second node of the second primary coil is between one-eighth of the length of the second primary coil and the midpoint of the second primary coil.

[0030] Furthermore, the RF power amplifier also includes a first resonant circuit, a first end of the first resonant circuit is connected to the output end of the power amplifier circuit, a second end of the first resonant circuit is grounded, and the first resonant circuit includes a third capacitor and a second inductor connected in series.

[0031] In a fifth aspect of the present application, an electronic device is provided, comprising the RF front-end module as described above, and the RF power amplifier as described above.

[0032] In this embodiment, the RF front-end module includes a substrate, and a first chip, a first transformer and a first capacitor arranged on the substrate; a power amplifier circuit is provided on the first chip, the transformer includes a first winding and a second winding coupled to each other, the output end of the power amplifier circuit is connected to the first end of the first winding, the second end of the first winding is grounded, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first winding includes a first primary coil and a second primary coil connected in parallel; the first end of the first capacitor is connected to the first node of the first primary coil, and / or the first end of the first capacitor is connected to the second node of the second primary coil; wherein the first end of the first primary coil A node is any node on the first primary coil, the second node of the second primary coil is any node on the second primary coil, and the second end of the first capacitor is grounded; this embodiment connects the first primary coil and the second primary coil in parallel to reduce the equivalent inductance of the first winding of the transformer, thereby achieving the purpose of improving the impedance conversion ratio of the transformer, and then realizing high power output of the RF front-end module under low voltage state, and by utilizing the equivalent inductance of the first primary coil 31 and / or the second primary coil 32 and the first capacitor to form an LC circuit, thereby achieving fundamental impedance matching of the RF front-end module and optimizing the matching bandwidth of the RF front-end module without the need for additional inductance. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a schematic diagram of a radio frequency front-end module provided in one embodiment of the present application;

[0034] Figure 2 is another schematic diagram of a radio frequency front-end module provided in one embodiment of the present application;

[0035] Figure 3 is another schematic diagram of a radio frequency front-end module provided in one embodiment of the present application;

[0036] Figure 4 is another schematic diagram of a radio frequency front-end module provided in one embodiment of the present application;

[0037] Figure 5 is another schematic diagram of a radio frequency front-end module provided in one embodiment of the present application;

[0038] Figure 6 is another schematic diagram of a radio frequency front-end module provided in one embodiment of the present application;

[0039] Figure 7 is a schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0040] Figure 8 is another schematic diagram of a radio frequency power amplifier provided in one embodiment of the present application;

[0041] Figure 9 is another schematic diagram of a radio frequency power amplifier provided in one embodiment of the present application;

[0042] Figure 10 is another schematic diagram of a radio frequency power amplifier provided in one embodiment of the present application;

[0043] Figure 11 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of the present application. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0045] It should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the present application to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0046] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Thus, a first element, component, region, layer, or portion discussed below may be represented as a second element, component, region, layer, or portion without departing from the teachings of the present application.

[0047] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the drawings is flipped, then the elements or features described as "under" or "beneath" or "beneath" the other elements will be oriented as "over" the other elements or features. Thus, the exemplary terms "under" and "under" may include both the upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0048] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present application. When used herein, the singular forms "a", "an", and " / the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, identify the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0049] In order to fully understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may also have other implementation methods.

[0050] At least one embodiment of the present application provides a radio frequency front-end module, comprising: a substrate; and a first chip, a first transformer and a first capacitor arranged on the substrate; a power amplifier circuit is provided on the first chip, the transformer comprises a first winding and a second winding coupled to each other, the output end of the power amplifier circuit is connected to the first end of the first winding, the second end of the first winding is grounded, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first winding comprises a first primary coil and a second primary coil connected in parallel; the first end of the first capacitor is connected to the first node of the first primary coil, and / or the first end of the first capacitor is connected to the second node of the second primary coil; wherein the first node of the first primary coil is any node on the first primary coil, the second node of the second primary coil is any node on the second primary coil, and the second end of the first capacitor is grounded.

[0051] by Figure 1 For example, a first chip 10, a first transformer 30, and a first capacitor C1 are provided on a substrate 100. A power amplifier circuit 101 is provided on the first chip 10. The power amplifier circuit 101 is configured to amplify an input signal and output an amplified signal. The power amplifier circuit 101 can be any amplifier stage in a power amplifier. For example, the amplifier stage can be a driver stage, an intermediate stage, or an output stage.

[0052] Specifically, the power amplifier circuit 101 includes a power amplifier transistor, which can be any type of transistor, such as a bipolar transistor or a field-effect transistor. For example, the power amplifier transistor is a heterojunction bipolar transistor (HBT), which is composed of multiple heterojunction bipolar transistors connected in parallel or in series. The power amplifier transistor is a heterojunction bipolar transistor implemented using a GaAs process. A signal input terminal provides an input signal to the input terminal (base) of the power amplifier transistor. The emitter of the power amplifier transistor is grounded, and the output terminal (collector) of the power amplifier transistor outputs the amplified signal.

[0053] It is understandable that the first chip 10 may also include a bias circuit, a matching circuit, etc. The chip output terminal of the first chip 10 is connected to the transformer 30 on the substrate, wherein the connection relationship between the chip output terminal of the first chip 10 and the transformer 30 can be a direct connection or an indirect connection (that is, there may be other components in the middle, such as: inductor / bonding wire or other components).

[0054] In at least one embodiment, Figure 1As shown, the first chip 10 includes a power amplifier circuit 101, and the input end of the power amplifier circuit receives the input RF signal. Optionally, the input end of the power amplifier circuit is connected to the RF signal input end. The output end of the power amplifier circuit (through the chip output end of the first chip 10) is connected to the first input end of the transformer 30, and the second input end of the transformer 30 is configured to be grounded or connected to the power supply end. The first output end of the transformer 22 is connected to the RF signal output end, and the second output end of the transformer 30 is configured to be grounded. It can be understood that the above connection relationship can be a direct connection or an indirect connection (that is, there can be other components in the middle).

[0055] In at least one embodiment, Figure 2 As shown, the first winding includes a first primary coil 31 and a second primary coil 32 connected in parallel; the first end of the first capacitor C1 is connected to the first node of the first primary coil 31, and / or the first end of the first capacitor C1 is connected to the second node of the second primary coil 32; wherein the first node of the first primary coil is any node on the first primary coil, the second node of the second primary coil is any node on the second primary coil, and the second end of the first capacitor is grounded. In other words, the first node can be any node between the first end of the first primary coil 31 and the second end of the first primary coil. The second node can be any node between the first end of the second primary coil 32 and the second end of the second primary coil.

[0056] It is understood that the first end of the first capacitor C1 may be connected to the first node of the first primary coil and not connected to the second node of the second primary coil. Alternatively, the first end of the first capacitor C1 may be connected to the second node of the second primary coil and not connected to the first node of the first primary coil. Alternatively, the first end of the first capacitor C1 may be connected to the first node of the first primary coil and also to the second node of the second primary coil.

[0057] It should be noted that, in this embodiment, the first winding includes a first primary coil 31 and a second primary coil 32 connected in parallel as an example, but is not limited to including only the first primary coil 31 and the second primary coil 32. It can also include multiple primary coils such as a third primary coil, a fourth primary coil or a fifth primary coil. Multiple primary coils are connected in parallel to form the first winding.

[0058] In this embodiment, because power amplifier circuit 101 is a single-ended power amplifier circuit without differential circuitry or power synthesis of multiple amplification branches, a relatively high transformer impedance transformation ratio is required to achieve high power output from the RF front-end module at low voltage. To address this, this embodiment connects the first primary coil 31 and the second primary coil 32 in parallel to reduce the equivalent inductance of the first winding of transformer 30, thereby improving the transformer's impedance transformation ratio.

[0059] In at least one embodiment, by connecting the first end of the first capacitor C1 to the first node of the first primary coil 31, and / or connecting the first end of the first capacitor C1 to the second node of the second primary coil 32; the equivalent inductance of the first primary coil 31 and / or the second primary coil 32 can be used to form an LC impedance conversion circuit with the first capacitor C1. Without the need for additional inductance, the first capacitor C1 can achieve fundamental impedance matching of the RF front-end module and optimize the matching bandwidth of the RF front-end module.

[0060] In at least one embodiment, the equivalent inductance of the first primary coil 31 and / or the second primary coil 32 and the first capacitor C1 are configured to resonate at a first frequency, wherein the first frequency is the frequency of the fundamental signal.

[0061] This embodiment utilizes the equivalent inductance of the first primary coil 31 and / or the second primary coil 32 to resonate with the first capacitor C1 at a first frequency, and the first frequency is the frequency of the fundamental signal, thereby ensuring that the RF front-end module achieves fundamental impedance matching of the RF front-end module while achieving low voltage and high power output, and optimizing the matching bandwidth of the RF front-end module.

[0062] In this embodiment, the RF front-end module includes a substrate, and a first chip, a first transformer and a first capacitor arranged on the substrate; a power amplifier circuit is provided on the first chip, the transformer includes a first winding and a second winding coupled to each other, the output end of the power amplifier circuit is connected to the first end of the first winding, the second end of the first winding is grounded, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first winding includes a first primary coil and a second primary coil connected in parallel; the first end of the first capacitor is connected to the first node of the first primary coil, and / or the first end of the first capacitor is connected to the second node of the second primary coil; wherein the first end of the first primary coil The node is any node on the first primary coil, the second node of the second primary coil is any node on the second primary coil, and the second end of the first capacitor is grounded; this embodiment connects the first primary coil and the second primary coil in parallel to reduce the equivalent inductance of the first winding of the transformer, thereby achieving the purpose of improving the impedance conversion ratio of the transformer, and then realizing high power output of the RF front-end module under low voltage state, and by utilizing the equivalent inductance of the first primary coil 31 and / or the second primary coil 32 and the first capacitor to form an LC circuit, so that without the need for additional inductance, the fundamental impedance matching of the RF front-end module can be achieved, and the matching bandwidth of the RF front-end module can be optimized.

[0063] In a specific embodiment, the output end of the power amplifier circuit 101 is connected to the first end of the first winding through at least two sets of bonding wires.

[0064] In at least one embodiment, the first chip 10 is wire-bonded on the substrate 100. The output of the power amplifier circuit on the first chip 10 is connected to the first end of the first winding of the transformer 30 on the substrate 100 via at least two sets of bonding wires.

[0065] In this embodiment, since the first end of the first capacitor C1 is connected to the first node of the first primary coil 31, and / or the first end of the first capacitor C1 is connected to the second node of the second primary coil 32; since the equivalent inductance of the first primary coil 31 and / or the second primary coil 32 can be used to form an LC impedance conversion circuit with the first capacitor C1, it is no longer necessary to use the equivalent inductance of the bonding wire to form an LC circuit with the first capacitor C1, and thus the equivalent inductance of the bonding wire can be reduced as much as possible, that is, the length of the bonding wire can be reduced, so that the layout between the first chip and the first transformer arranged on the substrate can be more compact and occupy a smaller area.

[0066] In a specific embodiment, if Figure 2 As shown, the at least two groups of bonding wires include a first bonding wire group 11a and a second bonding wire group 12a, the output end of the power amplifier circuit 101 is connected to the first pad and the second pad of the first chip 10, the first pad is connected to the first primary coil 31 through the first bonding wire group 11a, and the second pad is connected to the second primary coil 32 through the second bonding wire group 12a.

[0067] The first bonding wire group 11a may include one or more bonding wires. For example, the first bonding wire group 11a may include two, three, or four bonding wires. Similarly, the second bonding wire group 12a may include one or more bonding wires. For example, the second bonding wire group 12a may include two, three, or four bonding wires. It should be noted that the number of bonding wires in the first bonding wire group 11a and the number of bonding wires in the second bonding wire group 12a may be the same or different. The lengths of the bonding wires in the first bonding wire group 11a and the lengths of the bonding wires in the second bonding wire group 12a may be the same or different.

[0068] In this embodiment, since the first primary coil 31 and the second primary coil 32 need to be connected in parallel, this embodiment connects the output end of the power amplifier circuit 101 to the first pad and the second pad of the first chip 10, and connects the first pad to the first primary coil 31 through the first bonding wire group 11a, and connects the second pad to the second primary coil 32 through the second bonding wire group 12a. In this way, while the first primary coil 31 and the second primary coil 32 are connected in parallel, the equivalent inductance of the bonding wire can be reduced, thereby avoiding excessive losses caused by excessive equivalent inductance of the bonding wire, thereby optimizing the performance of the RF front-end module.

[0069] In a specific embodiment, the at least two groups of bonding wires include a first bonding wire group and a second bonding wire group, the output end of the power amplifier circuit is connected to the first pad of the first chip, the first pad is connected to the first primary coil through the first bonding wire group, and the first primary coil is connected to the second primary coil through the second bonding wire group.

[0070] The first bonding wire group may include one or more bonding wires. For example, the first bonding wire group may include two, three, or four bonding wires. Similarly, the second bonding wire group may include one or more bonding wires. For example, the second bonding wire group may include two, three, or four bonding wires. It should be noted that the number of bonding wires in the first bonding wire group and the number of bonding wires in the second bonding wire group may be the same or different. The lengths of the bonding wires in the first bonding wire group and the lengths of the bonding wires in the second bonding wire group may be the same or different.

[0071] In this embodiment, since the first primary coil 31 and the second primary coil 32 need to be connected in parallel, this embodiment connects the output end of the power amplifier circuit 101 to the first pad of the first chip 10, and connects the first pad to the first primary coil 31 through the first bonding wire group, and the first primary coil is connected to the second primary coil through the second bonding wire group. In this way, while the first primary coil 31 and the second primary coil 32 are connected in parallel, the equivalent inductance of the bonding wire can be reduced, thereby avoiding excessive loss and impedance mismatch caused by excessive equivalent inductance of the bonding wire, thereby optimizing the performance of the RF front-end module.

[0072] In a specific embodiment, if Figure 3 As shown, the at least two groups of bonding wires include a first bonding wire group 11a, a second bonding wire group 12a and a third bonding wire group 13a. The output end of the power amplifier circuit is connected to the first pad and the second pad of the first chip 10. The first pad is connected to the third node Z3 of the first primary coil 31 through the first bonding wire group 11a, and the second pad is connected to the fourth node Z4 on the second primary coil through the second bonding wire group 12a. The first end A1 of the first primary coil and the first end A2 of the second primary coil are connected through the third bonding wire group 13a.

[0073] The first bonding wire group 11a may include one or more bonding wires. For example, the first bonding wire group 11a may include two, three, or four bonding wires. Similarly, the second bonding wire group 12a may include one or more bonding wires. For example, the second bonding wire group 12a may include two, three, or four bonding wires. Similarly, the third bonding wire group 13a may include one or more bonding wires. For example, the third bonding wire group 13a may include two, three, or four bonding wires. It should be noted that the number of bonding wires in the first bonding wire group 11a, the number of bonding wires in the second bonding wire group 12a, and the number of bonding wires in the third bonding wire group 13a may be the same or different. The lengths of the bonding wires in the first bonding wire group 11a, the lengths of the bonding wires in the second bonding wire group 12a, and the lengths of the bonding wires in the third bonding wire group 13a may be the same or different.

[0074] In this embodiment, since the first primary coil 31 and the second primary coil 32 need to be connected in parallel, this embodiment connects the output end of the power amplifier circuit 101 to the first pad and the second pad of the first chip 10, and connects the first pad to the first primary coil 31 through the first bonding wire group 11a, and the second pad to the second primary coil 32 through the second bonding wire group 12a, and the first end A1 of the first primary coil and the first end A2 of the second primary coil are connected through the third bonding wire group 13a. In this way, when the first primary coil 31 and the second primary coil 32 are connected in parallel, the equivalent inductance of the bonding wire can be reduced, thereby avoiding excessive loss and impedance mismatch caused by excessive equivalent inductance of the bonding wire, thereby optimizing the performance of the RF front-end module.

[0075] In at least one embodiment, the third node Z3 of the first primary coil does not overlap with the first end A1 of the first primary coil, and the fourth node Z4 of the second primary coil does not overlap with the first end A2 of the second primary coil.

[0076] In at least one embodiment, the non-overlapping of the third node Z3 of the first primary coil and the first end A1 of the first primary coil means that the node where the first pad connects to the first primary coil 31 via the first bonding wire set 11a is not the first end A1 of the first primary coil 31. The non-overlapping of the fourth node Z4 of the second primary coil and the first end A2 of the second primary coil means that the node where the second pad connects to the second primary coil via the second bonding wire set 12a is not the first end A2 of the second primary coil 32. It should be noted that, in this embodiment, the node where the first pad connects to the first primary coil via the first bonding wire set 11a can be any node on the first primary coil 31 other than the first end A1 of the first primary coil. The node where the second pad connects to the second primary coil 32 via the second bonding wire set 12a can be any node on the second primary coil 32 other than the first end A2 of the second primary coil 32.

[0077] In this embodiment, the output end of the power amplifier circuit 101 is connected to the first pad and the second pad of the first chip 10, and the first pad is connected to the first primary coil 31 through the first bonding wire group 11a, and the second pad is connected to the second primary coil 32 through the second bonding wire group 12a. The first end A1 of the first primary coil and the first end A2 of the second primary coil are connected through the third bonding wire group 13a. The third node Z3 of the first primary coil does not overlap with the first end A1 of the first primary coil, and the fourth node Z4 of the second primary coil does not overlap with the first end A2 of the second primary coil. Thus, when the first primary coil 31 and the second primary coil 32 are connected in parallel, an LC circuit can be formed by utilizing the inductance between the first end of the first primary coil 31 and the third node of the first primary coil 31 and / or the inductance between the first end of the second primary coil 32 and the fourth node of the second primary coil 32 and the first capacitor C1. Therefore, without adding additional inductance, fundamental impedance matching of the RF front-end module can be achieved, and the matching bandwidth of the RF front-end module can be optimized.

[0078] In a specific embodiment, with the first end of the first primary coil 31 as the starting point, the third node Z3 on the first primary coil 31 is between the first end A1 of the first primary coil 31 and one-quarter of the first primary coil 31; with the first end A2 of the second primary coil 32 as the starting point, the fourth node on the second primary coil 32 is between the first end A2 of the second primary coil 32 and one-quarter of the second primary coil 32.

[0079] In at least one embodiment, Figure 3 As shown, the first end of the first primary coil is A1, the third node on the first primary coil is Z3, the first end of the second primary coil is A2, and the fourth node on the second primary coil is Z4. This application defines the third node on the first primary coil as Z3, which is between the first end A1 of the first primary coil and one-quarter of the length of the second primary coil, and the fourth node on the second primary coil as Z4, which is between the first end A2 of the second primary coil and one-quarter of the length of the second primary coil. This ensures that the first and second primary coils are connected in parallel while maintaining the coupling between the first and second windings of the transformer.

[0080] In a specific embodiment, with the first end of the first primary coil as the starting point, the first node of the first primary coil is between one-eighth of the length of the first primary coil and the midpoint of the first primary coil; with the first end of the second primary coil as the starting point, the second node of the second primary coil is between one-eighth of the length of the second primary coil and the midpoint of the second primary coil.

[0081] In at least one embodiment, the LC circuit formed by the first primary coil 31 and the first capacitor C1 is mainly an LC circuit formed by the inductance between the first end of the first primary coil 31 and the first node of the first primary coil 31 and the first capacitor, and / or the LC circuit formed by the second primary coil 32 and the first capacitor is mainly an LC circuit formed by the inductance between the first end of the second primary coil 32 and the second node of the second primary coil 32 and the first capacitor. Therefore, this embodiment limits the position of the first node of the first primary coil to the first end of the first primary coil as the starting point, and the second node of the first primary coil is between one-eighth of the length of the first primary coil and the midpoint of the first primary coil; and / or the position of the second node of the second primary coil is to the first end of the second primary coil as the starting point, and the second node of the second primary coil is between one-eighth of the length of the second primary coil and the midpoint of the second primary coil; thereby achieving fundamental impedance matching of the RF front-end module and optimizing the matching bandwidth of the RF front-end module.

[0082] In a specific embodiment, if Figure 4As shown, the RF front-end module also includes a control chip 20, which is arranged on a first side of the first chip 10, and the first side of the first chip 10 is arranged along a first direction. The transformer 30 is arranged on a second side of the first chip, and the second side of the first chip 10 is arranged along a second direction; the first capacitor C1 is arranged in an area between the first chip 10 and the control chip 20 and is arranged adjacent to the transformer 30, wherein the first direction and the second direction intersect.

[0083] In at least one embodiment, the control chip obtains control commands from the communication device through the MIPI communication bus (MIPI, mobile industry processor interface), that is, through the VIO, SCLK, and SDATA pins, to control the working state of the first chip. Optionally, the control chip is a CMOS (complementary metal oxide transistor) chip, that is, the control chip is implemented using CMOS (complementary metal oxide transistor) manufacturing process technology.

[0084] In at least one embodiment, the first direction is a horizontal direction, and the second direction is a vertical direction. The horizontal direction is the length direction of the substrate, and the vertical direction is the width direction of the substrate. The control chip 20 is arranged on the first side of the first chip 10, and the first side of the first chip 10 is arranged along the first direction, that is, the control chip 20 is arranged in the lower area or the upper area of the first chip 10. The transformer 30 is arranged on the second side of the first chip, and the second side of the first chip 10 is arranged along the second direction, that is, the transformer 30 is arranged in the left area or the right area of the first chip 10. The first capacitor C1 is arranged in the area between the first chip 0 and the control chip 20 and is adjacent to the transformer 30; the first chip 10, the first capacitor C1 and the control chip 20 are arranged in sequence along the vertical direction of the substrate (the width direction of the substrate).

[0085] In at least one embodiment, the first direction is a vertical direction, and the second direction is a horizontal direction. The horizontal direction is the length direction of the substrate, and the vertical direction is the width direction of the substrate. The control chip 20 is arranged on the first side of the first chip 10, and the first side of the first chip 10 is arranged along the first direction, that is, the control chip 20 is arranged in the left area or the right area of the first chip 10. The transformer 30 is arranged on the second side of the first chip 10, and the second side of the first chip 10 is arranged along the second direction, that is, the transformer 30 is arranged in the lower area or the upper area of the first chip 10. The first capacitor C1 is arranged in the area between the first chip 10 and the control chip 20 and is adjacent to the transformer 30; the first chip 10, the first capacitor C1 and the control chip 20 are arranged in sequence along the horizontal direction (length direction) of the substrate.

[0086] It should be noted that, since the first capacitor C1 in this embodiment is connected to the first winding of the transformer 30, in order to avoid excessive losses due to excessively long connecting wires when the first capacitor C1 is connected to the first winding of the transformer 30, this embodiment limits the first capacitor C1 to being disposed adjacent to the transformer 30. As an example, the first capacitor C1 is directly disposed on the first primary coil and / or the second primary coil of the first winding using an SMD method, thereby avoiding the presence of excessively long connecting wires when the first capacitor is connected to the first primary coil and / or the second primary coil of the first winding, thereby reducing the overall loss of the RF front-end module while achieving a more compact layout of the RF front-end module.

[0087] In a specific embodiment, the RF front-end module further includes a second capacitor C2, and the second end of the first winding is grounded through the second capacitor C2.

[0088] In at least one embodiment, the second capacitor C2 participates in impedance matching with the transformer. In this embodiment, by arranging the second capacitor C2 between the second end of the first winding and the ground, the second capacitor C2 can not only participate in impedance matching with the transformer but also achieve harmonic suppression.

[0089] In a specific embodiment, if Figure 5 As shown, the second capacitor C2 is arranged in a coupling center area formed by the first winding and the second winding.

[0090] In at least one embodiment, the first end of the first winding is arranged on the outside of the coupling center area formed by the first winding and the second winding, the second end of the first winding is arranged on the inside of the coupling center area formed by the first winding and the second winding, the second end of the first winding is grounded through the second capacitor C2, and the second capacitor C2 is arranged in the coupling center area formed by the first winding and the second winding, so that the coupling center area formed by the first winding and the second winding can be utilized, and there is no need to use an additional area on the substrate to set the second capacitor C2, thereby achieving a more compact layout of the RF front-end module.

[0091] In a specific embodiment, if Figure 5 As shown, the RF front-end module also includes a third capacitor C3 arranged on the substrate, the first chip 10 also includes a third pad, and the output end of the power amplifier circuit 101 is connected to the third pad; the third pad is connected to the first end of the third capacitor through a bonding wire, and the second end of the third capacitor C3 is grounded.

[0092] In at least one embodiment, the first chip 10 is connected to a third capacitor C3 provided on the substrate through a fourth bonding wire group S31. By utilizing the inductance equivalent to the fourth bonding wire group S31 to resonate with the third capacitor C3. For example: the inductance equivalent to the fourth bonding wire group S31 and the third capacitor C3 are configured to resonate at a second frequency, wherein the second ratio of the second frequency to the frequency of the fundamental signal of the RF front-end module is greater than or equal to 1.5; thereby achieving the suppression of the harmonics of the RF front-end module and meeting the impedance matching of the harmonics of the RF front-end module without affecting the fundamental impedance matching of the RF front-end module. It can be understood that the equivalent inductance of the fourth bonding wire group S31 can be flexibly adjusted by adjusting the number and / or length of the fourth bonding wire group S31.

[0093] In a specific embodiment, the RF front-end module further includes a third capacitor C3 and a third inductor L3 provided on the first chip, wherein the first end of the third inductor L3 is connected to the output end of the power amplifier circuit, the second end of the third inductor L3 is connected to the first end of the third capacitor, and the second end of the third capacitor C3 is grounded. In this embodiment, the third capacitor C3 and the third inductor L3 are both provided on the first chip in a chip-integrated manner. For example, the third inductor L3 can be provided on the first chip in the form of a winding inductor, and the third capacitor can be provided on the first chip in the form of a stacked capacitor.

[0094] In a specific embodiment, the RF front-end module also includes a third capacitor arranged on the first chip, the first end of the third capacitor is connected to the output end of the power amplifier circuit, and the second end of the third inductor is connected to the ground end through a fifth bonding wire group. In this embodiment, the third capacitor C3 is arranged on the first chip in a chip integration manner. For example: the third capacitor can be arranged on the first chip in the form of a stacked capacitor. The third inductor L3 is arranged on the substrate and / or chip in the form of bonding wires. For example: the third inductor L3 can be arranged on the first chip in the form of bonding wires, and connected to the ground end on the first chip, or the third inductor L3 can be arranged on the substrate in the form of bonding wires, and connected to the ground end on the substrate.

[0095] In at least one embodiment, the third capacitor C3 may be disposed on the substrate in an SMD manner.

[0096] In this embodiment, the fourth bonding wire group S31 not only serves to connect the first chip 10 and the third capacitor C3, but also can utilize the equivalent inductance of the fourth bonding wire group S31 to resonate with the third capacitor C3, thereby achieving the suppression of the harmonics of the RF front-end module and meeting the impedance matching of the harmonics of the RF front-end module; and there is no need to set additional wiring on the chip or substrate, which reduces the number of components of the RF front-end module and saves area and cost.

[0097] In a specific embodiment, if Figure 6 As shown, the RF front-end module also includes a third capacitor C3 and a second trace S32 arranged on the substrate, the first chip also includes a third pad, the output end of the power amplifier circuit is connected to the third pad, the third pad is connected to the first end of the second trace S32 through a fourth bonding wire group S31, the second end of the second trace S32 is connected to the first end of the third capacitor C3, and the second end of the third capacitor C3 is grounded.

[0098] In at least one embodiment, the first chip 10 is connected to a second trace S32 provided on the substrate via a fourth bonding wire group S31. By utilizing the equivalent inductance of the fourth bonding wire group S31 and the second trace S32 to resonate with the third capacitor C3, the fourth bonding wire group S31 and the equivalent inductance of the second trace S32 and the third capacitor are configured to resonate at a second frequency, wherein a second ratio of the second frequency to the frequency of the fundamental signal of the RF front-end module is greater than or equal to 2; thereby suppressing the harmonics of the RF front-end module and satisfying the impedance matching of the harmonics of the RF front-end module without affecting the fundamental impedance matching of the RF front-end module. It is understandable that by adjusting the number and / or length of the fourth bonding wire group S31, the equivalent inductance of the bonding wire can be flexibly adjusted; and / or by adjusting the length of the second trace S32, the equivalent inductance of the bonding wire can also be flexibly adjusted; thereby achieving flexible adjustment of the resonant frequency point.

[0099] In this embodiment, the fourth bonding wire group S31 not only serves to connect the first chip 10 and the third capacitor C3, but also can utilize the equivalent inductance of the fourth bonding wire group S31 and the second routing line S32 to resonate with the third capacitor C3, thereby suppressing the harmonics of the RF front-end module and meeting the impedance matching of the harmonics of the RF front-end module.

[0100] In a specific embodiment, the third capacitor C3 is disposed in the lower region of the transformer. This embodiment not only allows for flexible adjustment of the length of the fourth bonding wire group S31 but also enables a compact layout of the RF front-end module.

[0101] In a specific embodiment, the turns ratio of the first winding to the second winding is in the range of [1.5:1, 3.5:1].

[0102] In at least one embodiment, because the power amplifier circuit 101 is a single-ended power amplifier circuit without a differential circuit or power combination of multiple amplification branches, a high transformer impedance transformation is required to achieve high power output of the RF front-end module at low voltage. To address this, this embodiment limits the turns ratio of the first winding and the second winding to a range of [1.5:1, 3.5:1]; thereby achieving the purpose of improving the transformer impedance transformation ratio while ensuring high power output of the RF front-end module at low voltage.

[0103] In a specific embodiment, if Figure 5As shown, the first end B1 of the second winding is arranged outside the coupling center area formed by the first winding and the second winding, and the second end B2 of the second winding is arranged within the coupling center area formed by the first winding and the second winding.

[0104] In at least one embodiment, since the first end B1 of the second winding needs to be connected to a subsequent circuit or subsequent component, the second end B2 of the second winding is connected to ground or connected to ground through other matching components. Therefore, by arranging the first end B1 of the second winding outside the coupling center region formed by the first winding and the second winding, and arranging the second end B2 of the second winding within the coupling center region formed by the first winding and the second winding, it is possible to avoid the introduction of unnecessary bonding wires or traces when connecting the first end B1 of the second winding to the subsequent circuit or subsequent component, and to facilitate the placement of matching components in the coupling center region, making the layout of the RF front-end module more compact and reasonable, thereby reducing the occupied area and reducing losses.

[0105] The present application also provides a radio frequency power amplifier, such as Figure 8 As shown, it includes: a power amplifier circuit 101 and an output impedance matching circuit 300, the output impedance matching circuit 300 includes a first capacitor C1, a transformer 30 and a second capacitor C2, the transformer 30 includes a first winding and a second winding coupled to each other, the output end of the power amplifier circuit is connected to the first end of the first winding, the second end of the first winding is grounded through the second capacitor C2, the first end of the first capacitor C1 is connected to any node on the first winding; the second end C1 of the first capacitor C1 is grounded; the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded.

[0106] In at least one embodiment, since the power amplifier circuit 101 is a single-ended power amplifier circuit without a differential circuit or power synthesis of multiple amplification branches, the output impedance matching circuit 300 needs to achieve a large impedance conversion ratio to achieve high power output of the RF front-end module under low voltage conditions. The output impedance matching circuit 300 in this proposal includes a first capacitor C1, a transformer 30, and a second capacitor C2. The first capacitor C1, the transformer 30, and the second capacitor C2 jointly participate in impedance matching. By connecting the first end of the first capacitor C1 to any node on the first winding; the second end C1 of the first capacitor C1 is grounded, so that the equivalent inductance of the first winding can be used to form an LC circuit with the first capacitor C1. Without the need for additional inductance, the first capacitor C1 can achieve fundamental impedance matching of the RF power amplifier. In addition, by setting the second capacitor C2 between the second end of the first winding and ground, the second capacitor C2 and the transformer participate in fundamental impedance matching of the RF power amplifier, thereby ensuring that the RF power amplifier further optimizes the matching bandwidth of the RF front-end module under high power output conditions.

[0107] It should be noted that the implementation and functions of the power amplifier circuit 101 , the first capacitor C1 , the transformer 30 and the second capacitor C2 in this embodiment are the same as those in the above embodiment and are not described in detail herein.

[0108] The present application also provides a radio frequency power amplifier, such as Figure 9 As shown, it includes: a power amplifier circuit and an output impedance matching circuit, the output impedance matching circuit includes a first inductor, a first capacitor, and a transformer, the transformer includes a first winding and a second winding coupled to each other, the output end of the power amplifier circuit is connected to the first end of the first winding through the first inductor, the second end of the first winding is grounded through the second capacitor, the first end of the first capacitor is connected to any node on the first winding; the second end of the first capacitor is grounded; the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded.

[0109] In at least one embodiment, since the power amplifier circuit 101 is a single-ended power amplifier circuit without a differential circuit or power synthesis of multiple amplification branches, the output impedance matching circuit 300 needs to achieve a large impedance conversion ratio to achieve high power output of the RF front-end module under low voltage. The output impedance matching circuit 300 in this proposal includes a first capacitor C1, a transformer 30, and a first inductor L1. The first capacitor C1, the transformer 30, and the first inductor L1 jointly participate in impedance matching, and by connecting the first end of the first capacitor C1 to any node on the first winding; the second end C1 of the first capacitor C1 is grounded, so that the equivalent inductance of the first winding, the first inductor L1, and the first capacitor C1 can be used to form an LC impedance conversion circuit, thereby achieving fundamental impedance matching of the RF power amplifier while reducing the inductance value of the first inductor L1; thereby ensuring that the RF power amplifier achieves broadband impedance matching under high power output. In addition, by setting the second capacitor C2 between the second end of the first winding and the ground, the second capacitor C2 and the transformer participate in impedance matching, so as to further optimize the RF power amplifier under high power output conditions and achieve broadband impedance matching of the RF power amplifier.

[0110] It should be noted that the implementation and function of the power amplifier circuit 101, the first capacitor C1, and the transformer 30 in this embodiment are the same as those in the above embodiment and are not described in detail here. The first inductor can be implemented by any method such as SMD, winding inductor, or bonding wire.

[0111] The present application also provides a radio frequency power amplifier, such as Figure 10 As shown, it includes: a power amplifier circuit and an output impedance matching circuit, the output impedance matching circuit includes a first inductor, a first capacitor, a transformer, and a second capacitor, the transformer includes a first winding and a second winding coupled to each other, the output end of the power amplifier circuit is connected to the first end of the first winding through the first inductor, the second end of the first winding is grounded through the second capacitor, the first end of the first capacitor is connected to any node on the first winding; the second end of the first capacitor is grounded; the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded.

[0112] In at least one embodiment, since the power amplifier circuit 101 is a single-ended power amplifier circuit without a differential circuit or power synthesis of multiple amplification branches, the output impedance matching circuit 300 needs to achieve a large impedance conversion ratio to achieve high power output of the RF front-end module under low voltage. The output impedance matching circuit 300 in this proposal includes a first capacitor C1, a second capacitor C2, a transformer 30, and a first inductor L1. The first capacitor C1, the second capacitor C2, the transformer 30, and the first inductor L1 jointly participate in impedance matching, and by connecting the first end of the first capacitor C1 to any node on the first winding; the second end C1 of the first capacitor C1 is grounded, so that the equivalent inductance of the first winding, the first inductor L1, and the first capacitor C1 can form an LC circuit, thereby achieving fundamental impedance matching of the RF power amplifier while reducing the inductance value of the first inductor L1; thereby ensuring that the RF power amplifier achieves broadband impedance matching under high power output.

[0113] It should be noted that the implementation and functions of the power amplifier circuit 101 , the first capacitor C1 , the transformer 30 , the second capacitor C2 and the first inductor L1 in this embodiment are the same as those in the above embodiment and are not described in detail herein.

[0114] In a specific embodiment, if Figure 11 As shown, the first winding includes a first primary coil and a second primary coil connected in parallel, the first end of the first capacitor is connected to the first node of the first primary coil, and the first node of the first primary coil is any node on the first primary coil; and / or, the first end of the first capacitor is connected to the second node of the second primary coil, and the second node of the second primary coil is any node on the second primary coil.

[0115] In at least one embodiment, the first winding includes a first primary coil and a second primary coil connected in parallel; the first end of the first capacitor C1 is connected to the first node of the first primary coil, and / or the first end of the first capacitor C1 is connected to the second node of the second primary coil; wherein the first node of the first primary coil is any node on the first primary coil, the second node of the second primary coil is any node on the second primary coil, and the second end of the first capacitor is grounded. In other words, the first node can be any node between the first end of the first primary coil and the second end of the first primary coil. The second node can be any node between the first end of the second primary coil and the second end of the second primary coil.

[0116] It is understood that the first end of the first capacitor C1 may be connected to the first node of the first primary coil and not connected to the second node of the second primary coil. Alternatively, the first end of the first capacitor C1 may be connected to the second node of the second primary coil and not connected to the first node of the first primary coil. Alternatively, the first end of the first capacitor C1 may be connected to the first node of the first primary coil and also to the second node of the second primary coil.

[0117] It should be noted that, in this embodiment, the first winding includes a first primary coil and a second primary coil connected in parallel as an example, but is not limited to including only the first primary coil and the second primary coil. It can also include multiple primary coils such as a third primary coil, a fourth primary coil or a fifth primary coil. Multiple primary coils are connected in parallel to form the first winding.

[0118] In this embodiment, because power amplifier circuit 101 is a single-ended power amplifier circuit without differential circuitry or power combination of multiple amplification branches, a high transformer impedance transformation is required to achieve high power output from the RF front-end module at low voltage. To address this, this embodiment connects the first and second primary coils in parallel to reduce the equivalent inductance of the first winding of transformer 30, thereby improving the transformer's impedance transformation ratio.

[0119] In one embodiment, the output impedance matching circuit is configured to achieve an impedance conversion ratio in the range of [25:1, 5:1].

[0120] In at least one embodiment, because the power amplifier circuit 101 is a single-ended power amplifier circuit without a differential circuit or power combination of multiple amplification branches, the output impedance matching circuit requires a high impedance conversion ratio to achieve high power output of the RF front-end module at low voltage. To address this issue, this embodiment limits the output impedance matching circuit to a range of [25:1, 5:1]; thereby achieving the goal of improving the transformer's impedance conversion ratio while ensuring high power output of the RF front-end module at low voltage.

[0121] In a specific embodiment, with the first end of the first primary coil as the starting point, the first node of the first primary coil is between one-eighth of the length of the first primary coil and the midpoint of the first primary coil; with the first end of the second primary coil as the starting point, the second node of the second primary coil is between one-eighth of the length of the second primary coil and the midpoint of the second primary coil.

[0122] In at least one embodiment, the LC circuit formed by the first primary coil 31 and the first capacitor C1 is mainly an LC circuit formed by the inductance between the first end of the first primary coil 31 and the first node of the first primary coil 31 and the first capacitor, and / or the LC circuit formed by the second primary coil 32 and the first capacitor is mainly an LC circuit formed by the inductance between the first end of the second primary coil 32 and the second node of the second primary coil 32 and the first capacitor. Therefore, this embodiment defines the position of the first node of the first primary coil as starting from the first end of the first primary coil, and the second node of the first primary coil is between one-eighth of the length of the first primary coil and the midpoint of the first primary coil; and / or the position of the second node of the second primary coil is starting from the first end of the second primary coil, and the second node of the second primary coil is between one-eighth of the length of the second primary coil and the midpoint of the second primary coil; thereby, the substrate impedance matching of the RF front-end module can be achieved without affecting the impedance conversion achieved by the transformer, thereby satisfying the broadband impedance matching of the output end of the RF front-end module.

[0123] In a specific embodiment, if Figures 8-10 As shown, the RF power amplifier also includes a first resonant circuit, the first end of the first resonant circuit is connected to the output end of the power amplifier circuit, the second end of the first resonant circuit is grounded, and the first resonant circuit includes a third capacitor C3 and a second inductor L3 connected in series.

[0124] In at least one embodiment, the first resonant circuit is configured to suppress harmonics at the output of the power amplifier circuit. As an example, by causing the third capacitor C3 and the second inductor L3 to resonate at a third frequency, and by having a first ratio of the third frequency to the frequency of the fundamental signal of the RF front-end module be greater than or equal to 1.5, not only can the harmonics at the output of the power amplifier circuit be suppressed, but impedance matching of the harmonics at the output of the power amplifier circuit can also be achieved.

[0125] The present application also provides an electronic device, comprising the RF front-end module as described in the above embodiment and the RF power amplifier as described in the above embodiment.

[0126] The above is only a preferred embodiment of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and replacements can be made without departing from the technical principles of the present application. These improvements and replacements should also be regarded as the scope of protection of the present application.

Claims

1. A radio frequency front-end module, characterized in that: include A substrate, and a first chip, a first transformer, and a first capacitor disposed on the substrate; The first chip is provided with a power amplifier circuit, the transformer includes a first winding and a second winding coupled to each other, the output end of the power amplifier circuit is connected to the first end of the first winding, the second end of the first winding is grounded, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first winding includes a first primary coil and a second primary coil connected in parallel; The first end of the first capacitor is connected to the first node of the first primary coil, and / or the first end of the first capacitor is connected to the second node of the second primary coil; wherein the first node of the first primary coil is any node on the first primary coil, the second node of the second primary coil is any node on the second primary coil, and the second end of the first capacitor is grounded.

2. The RF front-end module according to claim 1, wherein: The output end of the power amplifier circuit is connected to the first end of the first winding through at least two groups of bonding wires.

3. The RF front-end module according to claim 2, wherein: The at least two groups of bonding wires include a first bonding wire group and a second bonding wire group. The output end of the power amplifier circuit is connected to a first pad and a second pad of the first chip. The first pad is connected to the first primary coil through the first bonding wire group, and the second pad is connected to the second primary coil through the second bonding wire group.

4. The RF front-end module according to claim 2, wherein: The at least two groups of bonding wires include a first bonding wire group and a second bonding wire group. The output end of the power amplifier circuit is connected to the first pad of the first chip. The first pad is connected to the first primary coil through the first bonding wire group. The first primary coil is connected to the second primary coil through the second bonding wire group.

5. The RF front-end module according to claim 2, wherein: The at least two groups of bonding wires include a first bonding wire group, a second bonding wire group and a third bonding wire group. The output end of the power amplifier circuit is connected to the first pad and the second pad of the first chip. The first pad is connected to the third node of the first primary coil through the first bonding wire group. The second pad is connected to the fourth node on the second primary coil through the second bonding wire group. The first end of the first primary coil and the first end of the second primary coil are connected through the third bonding wire group.

6. The RF front-end module according to claim 5, wherein: The third node of the first primary coil does not overlap with the first end of the first primary coil, and the fourth node on the second primary coil does not overlap with the first end of the second primary coil.

7. The RF front-end module according to claim 5, wherein: Taking the first end of the first primary coil as a starting point, the third node on the first primary coil is between the first end of the first primary coil and one quarter of the length of the first primary coil; Taking the first end of the second primary coil as a starting point, the fourth node on the second primary coil is between the first end of the second primary coil and one quarter of the length of the second primary coil.

8. The RF front-end module according to claim 1, wherein: Taking the first end of the first primary coil as a starting point, the first node of the first primary coil is between one eighth of the length of the first primary coil and the midpoint of the first primary coil; Taking the first end of the second primary coil as a starting point, the second node of the second primary coil is between one eighth of the length of the second primary coil and a midpoint of the second primary coil.

9. The RF front-end module according to claim 1, wherein: The RF front-end module also includes a control chip, which is arranged on a first side of the first chip, and the first side of the first chip is arranged along a first direction. The transformer is arranged on a second side of the first chip, and the second side of the first chip is arranged along a second direction. The first capacitor is arranged in an area between the first chip and the control chip and is adjacent to the transformer, wherein the first direction and the second direction intersect.

10. The RF front-end module according to claim 1, wherein: The RF front-end module further includes a second capacitor, and the second end of the first winding is grounded through the second capacitor.

11. The radio frequency front-end module according to claim 10, wherein: The second capacitor is arranged in a coupling center area formed by the first winding and the second winding.

12. The RF front-end module according to claim 1, wherein: The RF front-end module further includes a third capacitor disposed on the substrate, the first chip further includes a third pad, the output end of the power amplifier circuit is connected to the third pad, the third pad is connected to the first end of the third capacitor through a fourth bonding wire group, and the second end of the third capacitor is grounded; Alternatively, the RF front-end module also includes a third capacitor and a second trace arranged on the substrate, the first chip also includes a third solder pad, the output end of the power amplifier circuit is connected to the third solder pad, the third solder pad is connected to the first end of the second trace through a fourth bonding wire group, the second end of the second trace is connected to the first end of the third capacitor, and the second end of the third capacitor is grounded.

13. The RF front-end module according to claim 12, wherein: The third capacitor is arranged in a lower area of the transformer.

14. The RF front-end module according to claim 1, wherein: The RF front-end module further includes a third capacitor and a third inductor provided on the first chip, wherein a first end of the third inductor is connected to the output end of the power amplifier circuit, a second end of the third inductor is connected to the first end of the third capacitor, and a second end of the third capacitor is grounded; Alternatively, the RF front-end module also includes a third capacitor arranged on the first chip, a first end of the third capacitor is connected to the output end of the power amplifier circuit, and a second end of the third capacitor is connected to the ground through a fifth bonding wire group.

15. The radio frequency front-end module according to claim 1, wherein: The turns ratio of the first winding to the second winding is in the range of [1.5:1, 3.5:1].

16. The radio frequency front-end module according to claim 1, wherein: The first end of the second winding is arranged outside the coupling center area formed by the first winding and the second winding, and the second end of the second winding is arranged within the coupling center area formed by the first winding and the second winding.

17. A radio frequency power amplifier, characterized in that: include: A power amplifier circuit and an output impedance matching circuit, wherein the output impedance matching circuit includes a first capacitor, a transformer, and a second capacitor. The transformer includes a first winding and a second winding coupled to each other. The output end of the power amplifier circuit is connected to the first end of the first winding, the second end of the first winding is grounded through the second capacitor, the first end of the first capacitor is connected to any node on the first winding; the second end of the first capacitor is grounded; the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded.

18. A radio frequency power amplifier, characterized in that: include: A power amplifier circuit and an output impedance matching circuit, wherein the output impedance matching circuit includes a first inductor, a first capacitor, and a transformer, wherein the transformer includes a first winding and a second winding coupled to each other, wherein the output end of the power amplifier circuit is connected to the first end of the first winding through the first inductor, the second end of the first winding is grounded, the first end of the first capacitor is connected to any node on the first winding; the second end of the first capacitor is grounded; the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded.

19. A radio frequency power amplifier, characterized in that: include: A power amplifier circuit and an output impedance matching circuit, wherein the output impedance matching circuit includes a first inductor, a first capacitor, a transformer, and a second capacitor. The transformer includes a first winding and a second winding coupled to each other. The output end of the power amplifier circuit is connected to the first end of the first winding through the first inductor, the second end of the first winding is grounded through the second capacitor, the first end of the first capacitor is connected to any node on the first winding; the second end of the first capacitor is grounded; the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded.

20. The radio frequency power amplifier according to any one of claims 17 to 19, characterized in that The first winding includes a first primary coil and a second primary coil connected in parallel, the first end of the first capacitor is connected to a first node of the first primary coil, and the first node of the first primary coil is any node on the first primary coil; And / or, the first end of the first capacitor is connected to the second node of the second primary coil, and the second node of the second primary coil is any node on the second primary coil.

21. The radio frequency power amplifier according to any one of claims 17 to 19, wherein: The output impedance matching circuit is configured to achieve an impedance conversion ratio in the range of [25:1, 5:1].

22. The radio frequency power amplifier according to claim 20, wherein Taking the first end of the first primary coil as a starting point, the first node of the first primary coil is between one eighth of the length of the first primary coil and the midpoint of the first primary coil; Taking the first end of the second primary coil as a starting point, the second node of the second primary coil is between one eighth of the length of the second primary coil and a midpoint of the second primary coil.

23. The radio frequency power amplifier according to any one of claims 17 to 19, wherein: The RF power amplifier also includes a first resonant circuit, a first end of the first resonant circuit is connected to the output end of the power amplifier circuit, a second end of the first resonant circuit is grounded, and the first resonant circuit includes a third capacitor and a second inductor connected in series.

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