A transparent conductive oxide film and its preparation method and application

Abstract

The application discloses a transparent conductive oxide film and a preparation method and application thereof. The preparation method of the transparent conductive oxide film comprises the following steps: 1) argon and oxygen are taken as reaction gas, a transparent conductive oxide is deposited on a substrate by using a reactive plasma deposition method, the deposition gas pressure is controlled to be 0.1Pa-1Pa, the water vapor partial pressure is controlled to be less than or equal to 1*10 ‑3 Pa, and the deposition thickness is controlled to be less than or equal to 50nm, so that a deposited film with crystal nuclei formed on the surface is obtained; and 2) the deposited film is placed in an air atmosphere to perform annealing, and thus the transparent conductive oxide film is obtained. The RPD technology is adopted, argon and oxygen are taken as the reaction gas, the water vapor partial pressure and the deposition gas pressure are strictly controlled, and the high-mobility ultrathin TCO film is deposited, so that the TCO film can be applied in a solar cell, the consumption of the TCO can be reduced, and the production cost of the solar cell is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of transparent conductive oxide film preparation, in particular to a transparent conductive oxide film and a preparation method and application thereof. BACKGROUND

[0002] Transparent conductive oxide (TCO) film has the advantages of good conductivity and high optical transparency, and is widely used in the fields of display, light emitting diode, solar cell and the like. At present, the most common TCO film systems include SnO2-doped, In2O3-doped and ZnO-doped three kinds, among which the most representative are F-doped SnO2 (FTO) film, Sn-doped In2O3 (ITO) film and Al-doped ZnO (AZO) film. The conductivity of TCO film is determined by carrier concentration and mobility, and the carrier concentration is often limited by the doping amount, while high mobility is conducive to the maintenance of optical transparency while ensuring the conductivity. With the increasing use of TCO, the natural reserves of raw materials and the cost of raw materials gradually become an important factor that cannot be ignored. In order to comply with the requirements of sustainable development and reduce the cost caused by the use of TCO, reducing the thickness of TCO film is a feasible method.

[0003] Currently, the TCO deposition techniques mainly include magnetron sputtering deposition, atomic layer deposition and reactive plasma deposition (RPD) and the like. The sputtering energy of the magnetron sputtering deposition technique is large, which is easy to cause damage to the thin film, and is not conducive to the preparation of high-mobility TCO thin film. The deposition speed of the atomic layer deposition technique is slow, and the commonly used precursor is a metal organic compound, the types of suitable precursors are less and expensive, which is not conducive to the cost reduction. The RPD technique can deposit TCO thin film with high speed, low damage and good uniformity, which is conducive to the realization of high mobility and cost reduction, and has the most promising application prospect. However, although the RPD technique is conducive to the deposition of high-quality TCO thin film, and Koida et al. also proposed that the introduction of hydrogen or water vapor can help to realize high mobility (Koida, T., Ueno, Y. & Shibata, H. In2O3-Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures. Phys. Status Solidi-Appl. Mater. Sci. 215, (2018).), but this method is only suitable for the preparation of high-mobility TCO thin film with a thickness of more than 50 nm, and directly reducing the thickness of the TCO thin film to ≤50 nm by using the same method will often lead to a significant decline in the performance of the TCO thin film. In summary, it is currently impossible to prepare TCO thin film with both thickness ≤50 nm and high mobility, which is difficult to fully meet the growing practical application requirements.

[0004] Therefore, it is of great significance to develop a preparation method of high-mobility TCO thin film with a thickness of ≤50 nm. SUMMARY

[0005] The purpose of the present application is to provide a transparent conductive oxide thin film and a preparation method and application thereof.

[0006] The technical scheme adopted by the present application is as follows:

[0007] A preparation method of a transparent conductive oxide thin film comprises the following steps:

[0008] 1) Argon and oxygen are used as reaction gases, and a transparent conductive oxide is deposited on a substrate by a reactive plasma deposition method, the deposition pressure is controlled to be 0.1 Pa to 1 Pa, the water vapor partial pressure is ≤1x10 -3 Pa, and the deposition thickness is controlled to be ≤50 nm, so as to obtain a deposition thin film with crystal nuclei formed on the surface;

[0009] 2) The deposition thin film is placed in an air atmosphere for annealing, and a transparent conductive oxide thin film is obtained.

[0010] Preferably, the volume percentage of oxygen in the reaction gas in step 1) is 12% to 28%.

[0011] Further preferably, the volume percentage of oxygen in the reaction gas in step 1) is 14% to 23%.

[0012] Preferably, the deposition pressure in step 1) is 0.3 Pa to 0.6 Pa.

[0013] Preferably, the water vapor partial pressure in step 1) is ≤ 1 x 10 -4 Pa.

[0014] Note: A trace amount of water is inevitably contained in the RPD apparatus, for example, water in the air, water contained in the sample holding plate, etc., and even if vacuuming is performed, water cannot be completely removed, and water vapor is formed when the reaction plasma is deposited.

[0015] Further preferably, the water vapor partial pressure in step 1) is ≤ 1 x 10 -5 Pa.

[0016] Preferably, the temperature of the substrate in step 1) is 20°C to 200°C.

[0017] Preferably, the deposition current in step 1) is 60 A to 250 A.

[0018] Preferably, the deposition rate in step 1) is ≤ 5 nm / s.

[0019] Further preferably, the deposition rate in step 1) is 1 nm / s to 2 nm / s.

[0020] Note: The deposition rate refers to the thickness of the deposited film formed on the surface of the substrate per unit time.

[0021] Preferably, the transparent conductive oxide in step 1) is doped indium oxide, and the doping element is at least one of tin, cerium, tungsten, zirconium, and molybdenum;

[0022] Alternatively, the transparent conductive oxide in step 1) is doped tin oxide, and the doping element is at least one of fluorine, antimony, niobium, tungsten, and tantalum;

[0023] Alternatively, the transparent conductive oxide in step 1) is doped zinc oxide, and the doping element is at least one of aluminum, boron, and gallium.

[0024] Preferably, the deposition thickness in step 1) is ≤ 20 nm.

[0025] Preferably, the annealing temperature in step 2) is 160°C to 500°C, and the annealing time is 1 min to 120 min.

[0026] A transparent conductive oxide film prepared by the above method.

[0027] Preferably, the transparent conductive oxide film is an indium-doped oxide film, the doping element is at least one of tin, cerium, tungsten, zirconium, molybdenum, the mobility is 30 cm 2 ·V -1 ·s -1 ~ 130 cm 2 ·V -1 ·s -1 , and the carrier concentration is 1 x 10 20 cm -3 ~ 3 x 10 20 cm -3 .

[0028] Alternatively, the transparent conductive oxide film is a tin-doped oxide film, the doping element is at least one of fluorine, antimony, niobium, tungsten, tantalum, the mobility is 15 cm 2 ·V -1 ·s -1 ~ 100 cm 2 ·V -1 ·s -1 , and the carrier concentration is 0.5 x 10 20 cm -3 ~ 3.5 x 10 20 cm -3 .

[0029] Alternatively, the transparent conductive oxide film is a zinc-doped oxide film, the doping element is at least one of aluminum, boron, gallium, the mobility is 10 cm 2 ·V -1 ·s -1 ~ 60 cm 2 ·V -1 ·s -1 , and the carrier concentration is 0.8 x 10 20 cm -3 ~ 3 x 10 20 cm -3 .

[0030] Preferably, the thickness of the transparent conductive oxide film is ≤ 50 nm, and the volume fraction of the crystalline phase is 10% ~ 100%.

[0031] Further preferably, the thickness of the transparent conductive oxide film is ≤ 50 nm, and the volume fraction of the crystalline phase is 70% ~ 100%.

[0032] Still further preferably, the thickness of the transparent conductive oxide film is ≤ 30 nm, and the volume fraction of the crystalline phase is 70% ~ 90%.

[0033] Further preferably, the thickness of the transparent conductive oxide film is ≤ 15 nm, and the volume fraction of the crystalline phase is 70% to 90%.

[0034] Further preferably, the thickness of the transparent conductive oxide film is ≤ 10 nm, and the volume fraction of the crystalline phase is 70% to 90%.

[0035] Preferably, the lateral size of the crystal grains in the transparent conductive oxide film is 5 nm to 300 nm.

[0036] A solar cell comprising the transparent conductive oxide film described above.

[0037] The present application has the following beneficial effects: The present application uses the RPD technology, takes argon and oxygen as the reaction gas, and deposits a high-mobility ultra-thin (thickness ≤ 50 nm) TCO film by strictly controlling the water vapor partial pressure and the deposition gas pressure. The TCO film can be applied in a solar cell, can reduce the consumption of TCO, and is conducive to reducing the production cost of the solar cell.

[0038] Specifically:

[0039] 1) The present application controls the reaction gas ratio and the water vapor partial pressure according to a specific film thickness (without additional introduction of a hydrogen source as in the traditional method), thereby regulating the micro growth process of the TCO film, and solving the problem that the existing TCO film preparation method cannot prepare a high-mobility TCO film with a thickness ≤ 50 nm.

[0040] 2) The TCO film of the present application maintains high mobility and good photoelectric properties while the thickness is reduced to ≤ 50 nm, can reduce the consumption of TCO, and can reduce the production cost of the solar cell when used in the solar cell. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 The figure is a schematic diagram of the deposition film before and after annealing in the present application. DETAILED DESCRIPTION

[0042] The present application will be further explained and described below in conjunction with specific embodiments.

[0043] Example 1:

[0044] A transparent conductive oxide film is prepared by the following method:

[0045] 1) Load the ICO (cerium-doped indium oxide) ceramic target into the RPD device, and vacuumize to 5 × 10 -4Pa, 80sccm argon gas was introduced to start the electron gun and the current was set to 160A. After successful ignition was observed, argon and oxygen were introduced as reaction gas, the volume percentage of oxygen in the reaction gas was 15%, the deposition gas pressure was controlled to be 0.3Pa-0.4Pa, and the water vapor partial pressure was controlled to be 5x10 -4 Pa-7x10 -4 Pa. The substrate (a silicon wafer plated with a 100nm-thick silicon oxide layer) was set to have a temperature of 120°C, and the deposition of the ICO film was started. The deposition rate was controlled to be 1.3nm / s-1.6nm / s, and the deposition thickness was 20nm. A deposited film (a small amount of crystal nucleus was formed on the surface) was obtained.

[0046] 2) The deposited film was annealed in an air atmosphere at 180°C for 30min (schematic diagrams before and after annealing are shown in Figure 1 ), and a transparent conductive oxide film was obtained.

[0047] It was tested that the crystalline phase volume fraction of the transparent conductive oxide film in the embodiment was 80%-90%, the grain lateral size was 20nm-60nm, the mobility was 121cm 2 ·V -1 ·s -1 , and the carrier concentration was 2.56x10 20 cm -3 .

[0048] Comparative Example 1:

[0049] A transparent conductive oxide film was prepared by the following method:

[0050] 1) An ICO ceramic target was loaded into an RPD device, and vacuum extraction was performed until the pressure was 5x10 -4 Pa. 80sccm argon gas was introduced to start the electron gun and the current was set to 160A. After successful ignition was observed, argon and oxygen were introduced as reaction gas, the volume percentage of oxygen in the reaction gas was 15%, the deposition gas pressure was controlled to be 0.3Pa-0.4Pa, and the water vapor partial pressure was controlled to be 1x10 -3 Pa-2x10 -3 Pa. The substrate (same as in Example 1) was set to have a temperature of 120°C, and the deposition of the ICO film was started. The deposition rate was controlled to be 1.3nm / s-1.6nm / s, and the deposition thickness was 20nm. A deposited film (no crystal nucleus appeared on the surface) was obtained.

[0051] 2) The deposited film was annealed in an air atmosphere at 180°C for 30min, and a transparent conductive oxide film was obtained.

[0052] It was tested that the transparent conductive oxide film in the comparative example was in an amorphous state, and the mobility was 51cm 2 ·V-1 ·s -1 , the carrier concentration is 1.13×10 20 cm -3 .

[0053] Example 2:

[0054] A transparent conductive oxide film is prepared by the following method:

[0055] 1) The ICO ceramic target is loaded into the RPD device, vacuumed to 5×10 -4 Pa, 80sccm of argon gas is introduced to start the electron gun and set the current to 160A, and after successful ignition, argon and oxygen are introduced as the reaction gas, the volume percentage of oxygen in the reaction gas is 14%, the deposition gas pressure is controlled to be 0.3Pa-0.4Pa, and the water vapor partial pressure is controlled to be 4×10 -4 Pa-5×10 -4 Pa, the substrate (glass) temperature is set to 120℃, the ICO film is deposited, the deposition rate is controlled to be 1.3nm / s-1.5nm / s, the deposition thickness is 15nm, and the deposited film (a small amount of crystal nucleus is formed on the surface) is obtained;

[0056] 2) The deposited film is annealed in an air atmosphere at 180℃ for 30min to obtain the transparent conductive oxide film.

[0057] Tests show that the volume fraction of the crystalline phase of the transparent conductive oxide film in the embodiment is 70%-80%, the lateral size of the crystal grain is 20nm-50nm, the mobility is 108cm 2 ·V -1 ·s -1 , and the carrier concentration is 1.71×10 20 cm -3 .

[0058] Comparative Example 2:

[0059] A transparent conductive oxide film is prepared by the following method:

[0060] 1) The ICO ceramic target is loaded into the RPD device, vacuumed to 5×10 -4 Pa, 80sccm of argon gas is introduced to start the electron gun and set the current to 160A, and after successful ignition, argon, oxygen and argon-hydrogen mixed gas are introduced as the reaction gas, the volume percentage of oxygen in the reaction gas is 21%, the volume percentage of hydrogen is 2%, the deposition gas pressure is controlled to be 0.3Pa-0.4Pa, and the water vapor partial pressure is controlled to be 6×10 -4 Pa-7×10 -4Pa, and the substrate (same as in Example 2) was set to 120°C, and the deposition of the ITO film was started, with the deposition rate controlled to be 1.3-1.5 nm / s, and the deposition thickness controlled to be 15 nm, to obtain a deposited film (no crystal nucleus appeared on the surface) ;

[0061] 2) The deposited film was annealed in an air atmosphere at 180°C for 30 min to obtain the transparent conductive oxide film.

[0062] It was found that the transparent conductive oxide film in the present comparative example was in an amorphous state, with a mobility of 40 cm 2 ·V -1 ·s -1 , and a carrier concentration of 0.67 x 10 20 cm -3 .

[0063] According to the operation of the present comparative example, the deposition time was prolonged, and the film deposition thickness was controlled to be 100 nm, and finally a transparent conductive oxide film with a mobility of 143 cm 2 ·V -1 ·s -1 was prepared.

[0064] It can be seen that the method of the present comparative example can only prepare a high-mobility transparent conductive oxide film with a high thickness (thickness > 50 nm), and cannot prepare the low-thickness (thickness ≤ 50 nm) high-mobility transparent conductive oxide film of the present application.

[0065] Example 3:

[0066] A transparent conductive oxide film was prepared by the following method:

[0067] 1) An ITO (tin-doped indium oxide) ceramic target was loaded into an RPD device, vacuumed to 5 x 10 -4 Pa, and then 80 sccm of argon was introduced to start the electron gun and set the current to 160 A. After successful ignition was observed, argon and oxygen were introduced as the reaction gas, with the volume percentage of oxygen in the reaction gas being 18%, the deposition gas pressure being controlled to be 0.4-0.5 Pa, and the water vapor partial pressure being controlled to be 5 x 10 -4 Pa-6 x 10 -4 Pa, and the substrate (glass) was set to 30°C, and the deposition of the ITO film was started, with the deposition rate controlled to be 1.4-1.7 nm / s, and the deposition thickness controlled to be 18 nm, to obtain a deposited film (a small amount of crystal nucleus was formed on the surface) ;

[0068] 2) The deposited film was annealed in an air atmosphere at 170°C for 20 min to obtain the transparent conductive oxide film.

[0069] The transparent conductive oxide film in the embodiment has a crystalline phase volume fraction of 70% to 80%, a grain lateral size of 10 nm to 30 nm, a mobility of 36 cm 2 ·V -1 ·s -1 , a carrier concentration of 2.89×10 20 cm -3 .

[0070] Embodiment 4:

[0071] A transparent conductive oxide film is prepared by the following method:

[0072] 1) An IWO (indium oxide doped with tungsten) ceramic target is loaded into an RPD device, vacuumed to 5×10 -4 Pa, 80 sccm of argon is introduced to start the electron gun and the current is set to 140 A, after successful ignition is observed, argon and oxygen are introduced as reaction gas, the volume percentage of oxygen in the reaction gas is 16%, the deposition gas pressure is controlled to be 0.3 Pa to 0.5 Pa, the water vapor partial pressure is controlled to be 5×10 -4 Pa to 7×10 -4 Pa, the substrate (glass) temperature is set to 100℃, the deposition of the IWO film is started, the deposition rate is controlled to be 1.5 nm / s to 1.7 nm / s, the deposition thickness is 20 nm, and a deposited film (a small amount of crystal nucleus is formed on the surface) is obtained.

[0073] 2) The deposited film is annealed in an air atmosphere at 180℃ for 20 min to obtain the transparent conductive oxide film.

[0074] The transparent conductive oxide film in the embodiment has a crystalline phase volume fraction of 80% to 90%, a grain lateral size of 20 nm to 40 nm, a mobility of 52 cm 2 ·V -1 ·s -1 , a carrier concentration of 1.65×10 20 cm -3 .

[0075] Embodiment 5:

[0076] A transparent conductive oxide film is prepared by the following method:

[0077] 1) An IWO ceramic target is loaded into an RPD device, vacuumed to 5×10 -4 Pa, 80 sccm of argon is introduced to start the electron gun and the current is set to 140 A, after successful ignition is observed, argon and oxygen are introduced as reaction gas, the volume percentage of oxygen in the reaction gas is 14%, the deposition gas pressure is controlled to be 0.3 Pa to 0.4 Pa, the water vapor partial pressure is controlled to be 4×10-4 Pa, the substrate (glass) temperature is set to 100℃, the deposition of IWO film is started, the deposition rate is controlled to be 1.5nm / s-1.7nm / s, the deposition thickness is 15nm, and a deposited film (a small amount of crystal nucleus is formed on the surface) is obtained; -4 Pa, the substrate (glass) temperature is set to 100℃, the deposition of IWO film is started, the deposition rate is controlled to be 1.5nm / s-1.7nm / s, the deposition thickness is 15nm, and a deposited film (a small amount of crystal nucleus is formed on the surface) is obtained;

[0078] 2) The deposited film is annealed in an air atmosphere at 180℃ for 20min, and a transparent conductive oxide film is obtained.

[0079] It is tested that the crystalline phase volume fraction of the transparent conductive oxide film in the embodiment is 70%-90%, the grain lateral size is 10nm-30nm, the mobility is 45cm 2 ·V -1 ·s -1 , and the carrier concentration is 1.61×10 20 cm -3 .

[0080] Embodiment 6:

[0081] A transparent conductive oxide film is prepared by the following method:

[0082] 1) A TTO (tantalum-doped tin oxide) ceramic target is loaded into an RPD device, vacuum is extracted to 5×10 -4 Pa, argon gas of 80sccm is introduced to start the electron gun and the current is set to 150A, after successful ignition is observed, argon gas and oxygen gas are introduced as reaction gas, the volume percentage of oxygen gas in the reaction gas is 18%, the deposition gas pressure is controlled to be 0.3Pa-0.5Pa, and the water vapor partial pressure is controlled to be 5×10 -4 Pa-7×10 -4 Pa, the substrate (glass) temperature is set to 100℃, the deposition of IWO film is started, the deposition rate is controlled to be 1.5nm / s-1.7nm / s, the deposition thickness is 15nm, and a deposited film (a small amount of crystal nucleus is formed on the surface) is obtained;

[0083] 2) The deposited film is annealed in an air atmosphere at 180℃ for 20min, and a transparent conductive oxide film is obtained.

[0084] It is tested that the crystalline phase volume fraction of the transparent conductive oxide film in the embodiment is 70%-90%, the grain lateral size is 10nm-30nm, the mobility is 45cm 2 ·V -1 ·s -1 , and the carrier concentration is 1.61×10 20 cm -3 .

[0085] Embodiment 7:

[0086] A transparent conductive oxide film is prepared by the following method:

[0087] 1) A TTO ceramic target is loaded into an RPD device, vacuumed to 5x10 -4 Pa, 80sccm argon is introduced to start the electron gun and set the current to 150A, after successful ignition, argon and oxygen are introduced as reaction gas, the volume percentage of oxygen in the reaction gas is 20%, the deposition gas pressure is controlled to be 0.3Pa-0.5Pa, the water vapor partial pressure is controlled to be 4x10 -4 Pa-6x10 -4 Pa, the substrate (rutile TiO2) temperature is set to 180℃, the TTO film is deposited, the deposition rate is controlled to be 1.4nm / s-1.7nm / s, the deposition thickness is 20nm, and a deposited film (a small amount of crystal nucleus is formed on the surface) is obtained;

[0088] 2) The deposited film is annealed in an air atmosphere at 400℃ for 40min to obtain a transparent conductive oxide film.

[0089] Tests show that the transparent conductive oxide film in the embodiment has a crystalline phase volume fraction of 70%-80%, a grain transverse size of 20nm-50nm, a mobility of 96cm 2 ·V -1 ·s -1 , and a carrier concentration of 1.84x10 20 cm -3 .

[0090] Example 8:

[0091] A transparent conductive oxide film is prepared by the following method:

[0092] 1) An AZO (aluminum-doped zinc oxide) ceramic target is loaded into an RPD device, vacuumed to 5x10 -4 Pa, 80sccm argon is introduced to start the electron gun and set the current to 150A, after successful ignition, argon and oxygen are introduced as reaction gas, the volume percentage of oxygen in the reaction gas is 19%, the deposition gas pressure is controlled to be 0.4Pa-0.6Pa, the water vapor partial pressure is controlled to be 4x10 -4 Pa-5x10 -4 Pa, the substrate (glass) temperature is set to 200℃, the AZO film is deposited, the deposition rate is controlled to be 1.3nm / s-1.5nm / s, the deposition thickness is 45nm, and a deposited film (a small amount of crystal nucleus is formed on the surface) is obtained;

[0093] 2) The deposited film is annealed in an air atmosphere at 300℃ for 30min to obtain a transparent conductive oxide film.

[0094] The transparent conductive oxide film in the embodiment has a crystalline phase volume fraction of 80% to 90%, a grain lateral size of 15nm to 30nm, and a mobility of 31cm 2 ·V -1 ·s -1 , a carrier concentration of 2.13×10 20 cm -3 .

[0095] The above embodiment is the preferred embodiment of the present application, but the embodiment of the present application is not limited to the above embodiment, and any change, modification, substitution, combination, simplification, etc. made without departing from the spirit and principle of the present application should be an equivalent replacement mode, and all should be included in the protection scope of the present application.

Claims

1. A method of making a transparent conductive oxide film, characterized by, The method comprises the following steps: 1) argon and oxygen are used as reaction gas to deposit transparent conductive oxide on a substrate by reactive plasma deposition method, the deposition pressure is controlled to be 0.1 Pa to 1 Pa, the water vapor partial pressure is controlled to be ≤1×10 -3 Pa, and the deposition thickness is controlled to be <50 nm, so that a deposited film with crystal nucleus formed on the surface is obtained; 2) annealing the deposited film in air atmosphere to obtain a transparent conductive oxide film.

2. The method of claim 1, wherein: The volume percentage of oxygen in the reaction gas in step 1) is 12% to 28%.

3. The production method according to claim 1 or 2, characterized by: The temperature of the substrate in step 1) is 20°C to 200°C.

4. The production method according to claim 1 or 2, characterized by: The deposition rate of the deposition in step 1) is ≤5 nm / s.

5. The method of claim 1, wherein: The temperature of the annealing in step 2) is 160°C to 500°C, and the annealing time is 1 min to 120 min.

6. A transparent conductive oxide film, characterized by, The transparent conductive oxide film prepared by the method in any one of claims 1 to 5.

7. The transparent conductive oxide film according to claim 6, wherein: The transparent conductive oxide film is an indium oxide doped film, the doping element is at least one of tin, cerium, tungsten, zirconium and molybdenum, the mobility is 30cm 2 ·V -1 ·s -1 ~ 130cm 2 ·V -1 ·s -1 , the carrier concentration is 1×10 20 cm -3 ~ 3×10 20 cm -3 .

8. The transparent conductive oxide film according to claim 6, wherein: The transparent conductive oxide film is a doped tin oxide film, the doping element is at least one of fluorine, antimony, niobium, tungsten, and tantalum, the mobility is 15 cm 2 ·V -1 ·s -1 ~100 cm 2 ·V -1 ·s -1 , the carrier concentration is 0.5*10 20 cm -3 ~3.5*10 20 cm -3 .

9. The transparent conductive oxide film according to claim 6, wherein: The transparent conductive oxide film is a doped zinc oxide film, the doping element is at least one of aluminum, boron and gallium, and the mobility is 10 cm 2 ·V -1 ·s -1 ~60 cm 2 ·V -1 ·s -1 , and the carrier concentration is 0.8*10 20 cm -3 ~3*10 20 cm -3 .

10. A solar cell, characterized by The transparent conductive oxide film in any one of claims 6 to 9.

Images