A heavy doping device for reducing the resistivity of a single crystal

Abstract

The present invention discloses a heavy doping device for reducing the resistivity of a single crystal, and relates to the technical field of heavy doping. The present invention includes a placing barrel, wherein a silicon melt is arranged inside the placing barrel, a heating assembly is arranged at the bottom of the inner wall of the placing barrel, a plurality of vertical rods are arranged on the top of the heating assembly, a positioning ring is arranged on the top of the vertical rod, a protective cover is arranged inside the placing barrel, the protective cover is made of quartz material, and a circular hole is opened on the top of the protective cover, a stabilizing column is fixedly installed inside the circular hole of the protective cover, the stabilizing column is installed through an external bracket, and the stabilizing column is hollow in design, and two inclined plates are fixedly installed at the bottom edge of the stabilizing column. The present invention relies on the special design of the doping vessel, which is large at the top and thin in the middle, to force the release speed of the dopant liquid after sublimation, and the protective cover and the silicon melt form a closed space to prevent the gas from overflowing when the two are gas-phase fused, thereby improving the mixing uniformity of the silicon melt and the dopant, thereby reducing the resistivity of the single crystal silicon rod.

Description

Technical Field

[0001] The invention relates to the technical field of heavy doping, and in particular to a heavy doping device for reducing the resistivity of a single crystal. Background Art

[0002] Heavy-doping alloys are one of the existing production methods for silicon single crystals. The heavy-doping dopants are mainly boron, phosphorus, antimony and arsenic. Since boron is not volatile and has a high segregation coefficient, it can be added directly during the charging process. However, phosphorus, antimony and arsenic are volatile, flammable and explosive, and need to be added through a heavy-doping device.

[0003] The patent with the patent announcement number CN211713251U discloses a heavy doping device for reducing the resistivity of a single crystal, including a placement tube for placing a dopant and a protective cover for fixing the placement tube, wherein the placement tube is placed inside the protective cover; the lower end surface of the placement tube is a plane, and at least one set of through holes is provided on the lower end surface of the placement tube; the melted dopant passes through the through holes and then passes through the inner side of the protective cover and is fully mixed with the silicon melt along the lower end surface of the protective cover. The patent discloses a heavy doping device for reducing the resistivity of a single crystal, which has a simple structure, a stable doping device that is not easy to shake, increases the contact area between the lower end surface of the doping device and the molten silicon liquid surface, expands the contact area between the dopant and the silicon melt, and allows the dopant to be fully mixed with the molten silicon, thereby improving the doping efficiency and reducing the resistivity of the single crystal silicon rod.

[0004] However, the device still has some shortcomings: the device fully melts the molten dopant and the molten silicon and expands the contact area between the dopant and the molten silicon, but the device uses the molten dopant to directly contact or put it into the molten silicon. After the two come into contact, they are doped through natural fusion, which is prone to uneven doping, thereby reducing the stability of the single crystal silicon rod during the growth process and increasing the resistivity of the single crystal silicon rod to a certain extent. Summary of the invention

[0005] In view of the deficiencies of the prior art, the present invention provides a heavy doping device for reducing the resistivity of a single crystal, which solves the problems raised in the above-mentioned background technology.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solutions: a heavy doping device for reducing the resistivity of a single crystal, comprising a placement barrel, wherein a silicon melt is arranged inside the placement barrel, a heating component is arranged at the bottom of the inner wall of the placement barrel, a plurality of vertical rods are arranged on the top of the heating component, a positioning ring is arranged on the top of the vertical rods, a protective cover is arranged inside the placement barrel, the protective cover is made of quartz material, and a circular hole is opened on the top of the protective cover, a stabilizing column is fixedly installed inside the circular hole of the protective cover, the stabilizing column is installed through an external bracket, and the stabilizing column is hollow in design, and the bottom of the stabilizing column Two inclined plates are fixedly installed at the edge, and the two inclined plates are symmetrically distributed around the axis of the stable column. A doping vessel is fixedly installed at the bottom of the inclined plate. Dopants are added inside the doping vessel, and the doping vessel is located inside the protective cover. A rotating rod is installed through and rotatably inside the stable column. The bottom of the rotating rod contacts the bottom of the inner wall of the doping vessel. A handle is fixedly installed on the top of the rotating rod, and a spiral groove is opened on the outer wall of the rotating rod. A limiting ring is fixedly installed at the bottom of the stable column, and the inner wall of the limiting ring contacts the spiral groove on the outer wall of the rotating rod. A plurality of circular hole plates are equidistantly and fixedly installed on the outer wall of the rotating rod. Located inside the doping vessel, a number of arc blocks are fixedly installed inside the circular hole plate, and the silicon melt inside the barrel is heated by the heating component. At the same time, the staff manually or with external equipment adjusts the protective cover to move downward until the bottom of the protective cover penetrates a certain depth of the silicon melt inside the barrel and stops moving downward. When the protective cover moves, it drives the stabilizing column to move synchronously, and the stabilizing column drives the inclined plate to move synchronously, and the inclined plate drives the doping vessel to move downward. Then, a closed space is formed between the protective cover and the silicon melt through the stabilizing column. At this time, the heat of the silicon melt is transferred to the inside of the protective cover, that is, the doping vessel is heated. At this time, the inside of the doping vessel The dopant liquid sublimates when heated; when the protective cover is inserted into the silicon melt, the staff pulls the handle, that is, the rotating rod moves upward. When the rotating rod moves upward, it contacts the inner wall of the limit ring at the bottom of the stabilizing column. Through the limitation of the non-self-locking spiral groove on the outer wall of the rotating rod and the contact between the built-in block of the limit ring and the inner wall of the spiral groove, the rotating rod is able to generate a rotational force when it moves upward and starts to rotate. When the rotating rod rotates, it drives the circular hole plate to move synchronously, and the circular hole plate drives the arc block to rotate, so that the circular hole plate stirs the dopant solution inside the doping vessel when it rotates, and the arc surface of the arc block differentiates and disturbs the dopant liquid contacted by the circular hole plate.

[0007] According to the above technical solution, the arc blocks are equidistantly distributed and located at the edge of the circular hole inside the circular hole plate. A tumbling device for rotating and disturbing the silicon melt and the dopant liquid during gas phase mixing is provided below the doping vessel.

[0008] According to the above technical scheme, the tumbling device includes a screw, a fixed ring, a plurality of connecting rods and a heating ring. The top of the screw is rotatably installed at the center of the bottom of the doping vessel. The inner wall of the fixed ring penetrates and is fixedly installed at the center of the outer wall of the screw. The ends of the connecting rods close to the outer wall of the screw are fixedly installed on the outer wall surface of the fixed ring. The inner wall of the heating ring is fixedly installed on the end of the connecting rod away from the outer wall of the screw. When the doping vessel moves downward, the screw is driven to move synchronously. The screw contacts the inner wall of the positioning ring to ensure that the protective cover is always in the center of the placement barrel to avoid the protective cover from shifting and leaking. At the same time, the non-self-locking spiral groove on the outer wall of the screw contacts the block on the inner wall of the positioning ring to generate a rotational force. At this time, the screw begins to rotate along the bottom of the doping vessel. When the screw rotates, it drives the fixed ring to rotate, the fixed ring drives the connecting rod to rotate, and the connecting rod drives the heating ring to rotate.

[0009] According to the above technical solution, the inner wall of the positioning ring contacts the outer wall of the screw rod, the connecting rods are equidistantly distributed, and the outer wall of the heating ring contacts the inner wall of the protective cover.

[0010] According to the above technical solution, the tumbling device also includes a filter plate, a resistance block, a T-shaped plate, a plurality of push plates and a wave plate. The bottom of the filter plate is fixedly mounted on the top of the outer wall of the connecting rod, the resistance block is fixedly mounted on the inner wall of the protective cover at one end away from the filter plate, the T-shaped plate is penetrated by a spring at one end away from the inner wall of the protective cover and is slidably mounted inside the filter plate, the resistance block is located on the movement trajectory of the end of the T-shaped plate away from the filter plate, a plurality of push plates are equidistant and slidably mounted inside the filter plate, a plurality of push plates are fixedly connected by a cross bar, and the push plate is fixedly mounted on the end of the T-shaped plate away from the protective cover on one side away from the outer wall of the screw rod, and the wave plate is away from One side of the outer wall of the screw rod is fixedly installed on the outer wall of the push plate, and a diversion device for diverting and mixing different types of airflows entering the protective cover is arranged under the push plate. When the connecting rod rotates, it drives the filter plate to rotate, and when the filter plate rotates, it drives the T-shaped plate to rotate. When the T-shaped plate rotates, it will contact the arc surface of the resistance block to generate a resistance force. At this time, the T-shaped plate will move toward the outer wall of the screw rod, and the T-shaped plate drives the push plate to slide synchronously along the inner wall of the filter plate. Multiple push plates move synchronously through the cross bar, and the push plate drives the wave plate to move synchronously. When the T-shaped plate passes the resistance block, the T-shaped plate is reset by the spring force, and the T-shaped plate pulls the push plate and the wave plate to reset synchronously, and so on.

[0011] According to the above technical solution, the diversion device includes a pulley, a groove rod and a plurality of arc plates. The top of the pulley is rotatably installed inside the push plate, and the outer wall of the pulley contacts the bottom of the inner wall of the filter plate. The groove rod is fixedly installed on the vertical surface of the pulley away from the inner wall of the filter plate. The plurality of arc plates are equidistant and fixedly installed on the outer wall surface of the groove rod. When the push plate slides and resets, it drives the pulley to slide synchronously along the bottom of the inner wall of the filter plate and generates friction. The pulley starts to rotate due to the friction, thereby driving the groove rod to rotate. When the groove rod rotates, it drives the arc plate to rotate.

[0012] According to the above technical scheme, the diversion device also includes a kinetic rod and an L-shaped telescopic plate. The kinetic rod passes through and is fixedly installed on the outer wall of the pulley on one side close to the inner wall of the filter plate. The L-shaped telescopic plate is composed of a fixed end and a telescopic end, and the fixed end of the L-shaped telescopic plate is fixedly installed on the outer wall of the filter plate on one side close to the outer wall of the pulley. A square groove is opened inside the telescopic end of the L-shaped telescopic plate. When the pulley rotates, the kinetic rod is driven to rotate. The kinetic rod restricts the telescopic end of the L-shaped telescopic plate through the reciprocating spiral groove on the outer wall, and the small block inside the telescopic end of the L-shaped telescopic plate contacts the inner wall of the reciprocating spiral groove, so that the telescopic end of the L-shaped telescopic plate can slide and telescope along the outer wall of the kinetic rod when the kinetic rod rotates.

[0013] According to the above technical solution, the diversion device also includes a friction plate and a hinge plate, the friction plate is slidably installed inside the square groove at the telescopic end of the L-shaped telescopic plate, and the hinge plate is hinged between the side of the friction plate away from the inner wall of the L-shaped telescopic plate and the outer wall of the filter plate through a torsion spring. At the same time, the L-shaped telescopic plate drives the friction plate to move synchronously, and the friction plate drives the hinge plate to move synchronously. The hinge plate causes its own hinge axis to start rotating through the limiting and resistance force of the filter plate. At this time, the hinge plate moves in an arc shape upward or downward with its own hinge axis as the center. Similarly, the rotation of the hinge axis between the hinge plate and the friction plate causes the friction plate to slide upward or downward on the inner wall of the square groove at the telescopic end of the L-shaped telescopic plate and reset, and so on.

[0014] The present invention provides a heavy doping device for reducing the resistivity of a single crystal. It has the following beneficial effects:

[0015] (1) The present invention cooperates with a heating component, a protective cover, a stabilizing column, an inclined plate, a doping vessel, a rotating rod, a limiting ring, a circular hole plate and an arc block. First, relying on the special design of the doping vessel that is large at the top and small in the middle, the release speed of the dopant liquid after sublimation is forced, and the protective cover and the silicon melt form a closed space to prevent gas overflow when the two are gas-phase fused, thereby improving the mixing uniformity of the silicon melt and the dopant, thereby reducing the resistivity of the single crystal silicon rod; then, the liquid inside the doping vessel is enabled to be uniformly absorbed and sublimated into gas, avoiding uneven local heating that causes uneven volatilization of the dopant liquid and reduces the gas-phase doping efficiency with the silicon melt, thereby further reducing the resistivity of the single crystal silicon rod on the original basis.

[0016] (2) The present invention, through the setting of the tumbling device, cooperates with the positioning ring, doping vessel, screw, fixing ring, connecting rod, heating ring, filter plate, abutment block, T-plate, push plate and wave plate, so that the heating ring heats up the dopant gas phase and silicon melt surging inside the protective cover, thereby avoiding that the resistivity of the single crystal silicon head is artificially high due to the heat treatment of the single crystal silicon rod, thereby causing certain damage to the product and reducing the yield rate and causing economic losses; and the filter plate is caused to rotate, disturb and mix the dopant gas phase and silicon melt gas phase, thereby avoiding a slow mixing process of the two gas phases and increasing the volatilization of the gas phase, and the wave plate further disturbs the gas flow rate inside the filter plate through the reciprocating sliding of its own wave surface, thereby increasing the rate of the gas phase making a circular motion inside the protective cover to ensure that the two gas phases are active and improve the doping quality.

[0017] (3) The present invention sets a diversion device, and cooperates with a push plate, a pulley, a groove rod, an arc plate, a kinetic energy rod, an L-shaped telescopic plate, a friction plate and a hinged plate, so that when the arc plate rotates, it causes a rotational disturbance on the gas phase that the filter plate is about to contact, thereby causing it to disperse, thereby avoiding the formation of a certain amount of water vapor in the gas phase and forming agglomeration. After dispersion, the heat energy generated by the heating ring can evaporate the water vapor in time, thereby avoiding the explosion of water vapor during the mixing process of the two gas phases and reducing the doping effect; and the telescopic end of the L-shaped telescopic plate is caused to reciprocate and contract to fan the gas phase passing through the filter plate, and cooperates with the disturbance of the wave plate to extend the duration of synchronous disturbance of different types of gas phases by the filter plate, and the sliding and swinging of the friction plate and the hinged plate expand the disturbance range of the L-shaped telescopic plate on the gas phase, and at the same time, the L-shaped telescopic plate is caused to increase the fanning frequency within the same duration to accelerate the fusion speed of the dopant gas phase into the silicon melt. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic diagram of the present invention as a whole;

[0019] Figure 2 It is a cross-sectional schematic diagram of the present invention as a whole;

[0020] Figure 3 This is a schematic diagram of the peripheral structure of the doping vessel of the present invention;

[0021] Figure 4 This is a schematic diagram of the internal structure of the doping vessel of the present invention;

[0022] Figure 5 It is a schematic diagram of the tumbling device of the present invention;

[0023] Figure 6 It is an overall enlarged schematic diagram of the tumbling device of the present invention;

[0024] Figure 7 For the present invention Figure 6 The enlarged schematic diagram at A in the middle;

[0025] Figure 8It is a schematic diagram of the flow diversion device of the present invention;

[0026] Fig. 9 For the present invention Figure 8 Enlarged schematic diagram of point B in the middle.

[0027] In the figure: 1. Placement barrel; 2. Heating assembly; 3. Vertical rod; 31. Positioning ring; 4. Tumbling device; 41. Screw rod; 42. Fixed ring; 43. Connecting rod; 44. Heating ring; 45. Filter plate; 46. Resistance block; 47. T-shaped plate; 48. Push plate; 49. Wave plate; 5. Diverter device; 51. Pulley; 52. Grooved rod; 53. Arc plate; 54. Kinetic rod; 55. L-shaped telescopic plate; 56. Friction plate; 57. Hinge plate; 6. Protective cover; 7. Stabilizing column; 8. Inclined plate; 9. Doping vessel; 10. Rotating rod; 11. Limiting ring; 12. Circular hole plate; 13. Arc block. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0029] See also Figure 1-Figure 9An embodiment of the present invention is: a heavy doping device for reducing the resistivity of a single crystal, comprising a placing barrel 1, wherein silicon melt is arranged inside the placing barrel 1, a heating assembly 2 is arranged at the bottom of the inner wall of the placing barrel 1, a plurality of vertical rods 3 are arranged on the top of the heating assembly 2, a positioning ring 31 is arranged on the top of the vertical rod 3, a protective cover 6 is arranged inside the placing barrel 1, the protective cover 6 is made of quartz material, and a circular hole is opened on the top of the protective cover 6, a stabilizing column 7 is fixedly installed inside the circular hole of the protective cover 6, the stabilizing column 7 is installed through an external bracket, and the stabilizing column 7 is hollow in design, two inclined plates 8 are fixedly installed at the bottom edge of the stabilizing column 7, and the two inclined plates 8 are symmetrically distributed about the axis of the stabilizing column 7, a doping vessel 9 is fixedly installed at the bottom of the inclined plate 8, a doping agent is added inside the doping vessel 9, and the doping vessel 9 is located inside the protective cover 6, a rotating rod 10 is penetrated and rotatably installed inside the stabilizing column 7, the bottom of the rotating rod 10 contacts the bottom of the inner wall of the doping vessel 9, and the rotating rod 10 A handle is fixedly installed on the top, and a spiral groove is opened on the outer wall of the rotating rod 10, a limit ring 11 is fixedly installed on the bottom of the stabilizing column 7, and the inner wall of the limit ring 11 contacts the spiral groove on the outer wall of the rotating rod 10, and a plurality of circular hole plates 12 are equidistantly and fixedly installed on the outer wall of the rotating rod 10, and the plurality of circular hole plates 12 are located inside the doping vessel 9, and a plurality of arc blocks 13 are fixedly installed inside the circular hole plates 12. Through the above cooperation and relying on the special design of the doping vessel 9 with large top and bottom and thin middle, the release speed of the dopant liquid after sublimation is forced, and the protective cover 6 forms a closed space with the silicon melt to prevent the gas from overflowing when the two are gas-phase fused, thereby improving the mixing uniformity of the silicon melt and the dopant, thereby reducing the resistivity of the single crystal silicon rod; through the above cooperation, the liquid inside the doping vessel 9 can be uniformly absorbed and sublimated into gas, avoiding uneven local heating resulting in uneven volatilization of the dopant liquid and reducing the gas-phase doping efficiency with the silicon melt, and further reducing the resistivity of the single crystal silicon rod on the original basis.

[0030] The arc blocks 13 are equidistantly distributed and located at the edge of the circular hole inside the circular hole plate 12. A tumbling device 4 for rotating and disturbing the silicon melt and the dopant liquid during gas phase mixing is provided below the doping vessel 9.

[0031] When in use, the silicon melt in the placement barrel 1 is heated by the heating component 2, and at the same time, the staff manually or with external equipment adjusts the protective cover 6 to move downward until the bottom of the protective cover 6 penetrates a certain depth into the silicon melt in the placement barrel 1 and stops moving downward. When the protective cover 6 moves, it drives the stabilizing column 7 to move synchronously, and the stabilizing column 7 drives the inclined plate 8 to move synchronously, and the inclined plate 8 drives the doping vessel 9 to move downward, and then a closed space is formed between the protective cover 6 and the silicon melt through the stabilizing column 7. At this time, the heat of the silicon melt is transferred to the inside of the protective cover 6, that is, the doping vessel 9 is heated, and at this time, the dopant liquid in the doping vessel 9 is heated and sublimated. Through the above cooperation and relying on the special design of the doping vessel 9 that is large at the top and bottom and thin in the middle, the release speed of the dopant liquid after sublimation is forced, and the protective cover 6 and the silicon melt form a closed space to prevent gas overflow when the two are gas-phase fused, thereby improving the mixing uniformity of the silicon melt and the dopant, thereby reducing the resistivity of the single crystal silicon rod; when After the protective cover 6 is inserted into the silicon melt, the staff pulls the handle, that is, the rotating rod 10 to move upward. When the rotating rod 10 moves upward, it contacts the inner wall of the limit ring 11 at the bottom of the stabilizing column 7. Through the limitation of the non-self-locking spiral groove on the outer wall of the rotating rod 10 and the contact between the built-in block of the limit ring 11 and the inner wall of the spiral groove, the rotating rod 10 can generate a rotational force and start to rotate when it moves upward. When the rotating rod 10 rotates, it drives the circular hole plate 12 to move synchronously, and the circular hole plate 12 drives the arc block 13 to rotate, so that when the circular hole plate 12 rotates, the dopant solution inside the doping vessel 9 is stirred, and the arc surface of the arc block 13 is used to differentiate and disturb the dopant liquid contacted by the circular hole plate 12. Through the above cooperation, the liquid inside the doping vessel 9 can be evenly absorbed and sublimated into gas, avoiding uneven local heating that causes uneven volatilization of the dopant liquid and reduces the gas phase doping efficiency with the silicon melt, and further reduces the resistivity of the single crystal silicon rod on the original basis.

[0032] See also Figure 1-Figure 9 , based on the above embodiment, another embodiment of the present invention further includes a tumbling device 4;

[0033] The tumbling device 4 includes a screw 41, a fixed ring 42, a plurality of connecting rods 43 and a heating ring 44. The top of the screw 41 is rotatably mounted at the bottom center of the doping vessel 9. The inner wall of the fixed ring 42 penetrates and is fixedly mounted at the center of the outer wall of the screw 41. The ends of the plurality of connecting rods 43 close to the outer wall of the screw 41 are fixedly mounted on the outer wall surface of the fixing ring 42. The inner wall of the heating ring 44 is fixedly mounted on the end of the connecting rod 43 away from the outer wall of the screw 41. Through the above coordination, the heating ring 44 is prompted to heat up the dopant gas and silicon melt surging inside the protective cover 6 to avoid the single crystal silicon rod having an artificially high resistivity due to heat treatment, thereby causing certain damage to the product, thereby reducing the yield rate and causing economic losses.

[0034] The inner wall of the positioning ring 31 contacts the outer wall of the screw rod 41 , the connecting rods 43 are equidistantly distributed, and the outer wall of the heating ring 44 contacts the inner wall of the protective cover 6 .

[0035] The tumbling device 4 also includes a filter plate 45, a resistance block 46, a T-shaped plate 47, a plurality of push plates 48 and a wave plate 49. The bottom of the filter plate 45 is fixedly mounted on the top of the outer wall of the connecting rod 43, the resistance block 46 is fixedly mounted on the inner wall of the protective cover 6 at one end away from the filter plate 45, and the T-shaped plate 47 is slidably mounted inside the filter plate 45 at one end away from the inner wall of the protective cover 6 through a spring. The resistance block 46 is located on the motion trajectory of the end of the T-shaped plate 47 away from the filter plate 45. A plurality of push plates 48 are equidistant and slidably mounted inside the filter plate 45. The plurality of push plates 48 are fixedly connected by a cross bar, and the push plate 48 is fixedly mounted on the T-shaped plate 47 at one side away from the outer wall of the screw rod 41. Plate 47 is away from one end of the protective cover 6, and the wave plate 49 is fixedly installed on the outer wall of the push plate 48 away from the outer wall of the screw rod 41. A diversion device 5 for diverting and mixing different types of airflows entering the protective cover 6 is arranged below the push plate 48. Through the above cooperation, the filter plate 45 is prompted to rotate, disturb and mix the dopant gas phase and the silicon melt gas phase, thereby avoiding a slow mixing process of the two gas phases and increasing the volatilization of the gas phase, and the wave plate 49 further disturbs the gas phase flow rate inside the filter plate 45 through the reciprocating sliding of its own wave surface, thereby increasing the rate at which the gas phase makes a circular motion inside the protective cover 6 to ensure that the two gas phases are active and improve the doping quality.

[0036] During use, the doping vessel 9 moves downward and drives the screw 41 to move synchronously. The screw 41 contacts the inner wall of the positioning ring 31 to ensure that the protective cover 6 is always in the center of the placement barrel 1, so as to avoid the protective cover 6 from deviating and leaking. At the same time, the non-self-locking spiral groove on the outer wall of the screw 41 contacts the inner wall block of the positioning ring 31 to generate a rotational force. At this time, the screw 41 starts to rotate along the bottom of the doping vessel 9. When the screw 41 rotates, it drives the fixed ring 42 to rotate, and the fixed ring 42 drives the connecting rod 43 to rotate. The connecting rod 43 drives the heating ring 44 to rotate. Through the above cooperation, the heating ring 44 is prompted to heat the dopant gas phase and the silicon melt surging inside the protective cover 6 to avoid the single crystal silicon rod The resistivity of the head is artificially high due to heat treatment, thereby causing certain damage to the product, thereby reducing the yield and causing economic losses; when the connecting rod 43 rotates, it drives the filter plate 45 to rotate, and when the filter plate 45 rotates, it drives the T-shaped The plate 47 rotates, and the T-shaped plate 47 will contact the arc surface of the resistance block 46 when rotating to generate a resistance force. At this time, the T-shaped plate 47 will move toward the outer wall of the screw rod 41, and the T-shaped plate 47 drives the push plate 48 to slide synchronously along the inner wall of the filter plate 45. Multiple push plates 48 move synchronously through the cross bar, and the push plate 48 drives the wave plate 49 to move synchronously. When the T-shaped plate 47 passes over the resistance block 46, the T-shaped plate 47 is reset by the spring force, and the T-shaped plate 47 pulls the push plate 48 and the wave plate 49 to reset synchronously, and so on. Through the above cooperation, the filter plate 45 is prompted to rotate and disturb and mix the dopant gas phase and the silicon melt gas phase, so as to avoid a slow mixing process of the two gas phases and thereby increase the volatilization of the gas phase, and the wave plate 49 further disturbs the gas phase flow rate inside the filter plate 45 by sliding back and forth on its own wave surface, thereby increasing the rate at which the gas phase makes a circular motion inside the protective cover 6 to ensure that the two gas phases are active and improve the doping quality.

[0037] See also Figure 1-Figure 9 , based on the above embodiment, another embodiment of the present invention further includes a diversion device 5;

[0038] The flow dividing device 5 comprises a pulley 51, a groove rod 52 and a plurality of arc plates 53. The top of the pulley 51 is rotatably mounted inside the push plate 48, and the outer wall of the pulley 51 contacts the bottom of the inner wall of the filter plate 45. The groove rod 52 is fixedly mounted on the vertical surface of the pulley 51 away from the inner wall of the filter plate 45. The plurality of arc plates 53 are equidistant and fixedly mounted on the outer wall surface of the groove rod 52. Through the above coordination, the arc plate 53 is caused to rotate and disturb the gas phase to be contacted by the filter plate 45 when it rotates, so as to disperse it, and avoid the gas phase carrying a certain amount of water vapor to form an aggregation phenomenon. After dispersion, the heat energy generated by the heating ring 44 is convenient to evaporate the water vapor in time, and avoid the water vapor from exploding and reducing the doping effect during the mixing process of the two gas phases.

[0039] The diversion device 5 also includes a kinetic rod 54 and an L-shaped telescopic plate 55. The kinetic rod 54 penetrates through and is fixedly installed on the outer wall of the pulley 51 on one side close to the inner wall of the filter plate 45. The L-shaped telescopic plate 55 consists of a fixed end and a telescopic end. The fixed end of the L-shaped telescopic plate 55 is fixedly installed on the outer wall of the filter plate 45 on one side close to the outer wall of the pulley 51. A square groove is provided inside the telescopic end of the L-shaped telescopic plate 55.

[0040] The diversion device 5 also includes a friction plate 56 and a hinged plate 57. The friction plate 56 is slidably installed inside the square groove of the telescopic end of the L-shaped telescopic plate 55. The hinged plate 57 is hinged between the side of the friction plate 56 away from the inner wall of the L-shaped telescopic plate 55 and the outer wall of the filter plate 45 through a torsion spring. Through the above cooperation, the telescopic end of the L-shaped telescopic plate 55 is prompted to reciprocate and contract to fan the gas phase passing through the inside of the filter plate 45, and cooperate with the disturbance of the wave plate 49 to extend the duration of different types of gas phases being synchronously disturbed by the filter plate 45. The sliding and swinging of the friction plate 56 and the hinged plate 57 expand the disturbance range of the L-shaped telescopic plate 55 on the gas phase, and at the same time, the L-shaped telescopic plate 55 is prompted to increase the fanning frequency within the same duration to accelerate the speed of the dopant gas phase fusion into the silicon melt.

[0041] When in use, the push plate 48 slides and resets, driving the pulley 51 to slide synchronously along the bottom of the inner wall of the filter plate 45 and generating friction. The pulley 51 starts to rotate due to the friction, thereby driving the groove rod 52 to rotate. When the groove rod 52 rotates, it drives the arc plate 53 to rotate. Through the above cooperation, the arc plate 53 is caused to rotate and disturb the gas phase that the filter plate 45 is about to contact, so as to disperse it, thereby avoiding the gas phase carrying a certain amount of water vapor to form agglomeration phenomenon. After dispersion, the heat energy generated by the heating ring 44 is convenient to evaporate the water vapor in time, thereby avoiding the water vapor from exploding during the mixing process of the two gas phases and reducing the doping effect; when the pulley 51 rotates, it drives the kinetic energy rod 54 to rotate. The kinetic energy rod 54 restricts the telescopic end of the L-shaped telescopic plate 55 through the reciprocating spiral groove on the outer wall, and the small block inside the telescopic end of the L-shaped telescopic plate 55 contacts the inner wall of the reciprocating spiral groove, so that the telescopic end of the L-shaped telescopic plate 55 can slide and telescope along the outer wall of the kinetic energy rod 54 when the kinetic energy rod 54 rotates. The contraction plate 55 drives the friction plate 56 to move synchronously, and the friction plate 56 drives the hinged plate 57 to move synchronously. The hinged plate 57 is prompted to rotate its own hinge axis through the limit and resistance force of the filter plate 45. At this time, the hinged plate 57 moves in an arc shape upward or downward with its own hinge axis as the center. Similarly, the rotation of the hinge axis between the hinged plate 57 and the friction plate 56 prompts the friction plate 56 to slide upward or downward on the inner wall of the square groove at the telescopic end of the L-shaped telescopic plate 55 and reset, and so on. Through the above cooperation, the telescopic end of the L-shaped telescopic plate 55 is prompted to reciprocate and shrink and pull to fan the gas phase inside the filter plate 45, and cooperate with the disturbance of the wave plate 49 to extend the duration of different types of gas phases being synchronously disturbed by the filter plate 45, and the sliding and swinging of the friction plate 56 and the hinged plate 57 expand the disturbance range of the L-shaped telescopic plate 55 on the gas phase, and at the same time prompt the L-shaped telescopic plate 55 to increase the fanning frequency within the same duration to accelerate the speed of the dopant gas phase fusion into the silicon melt.

[0042] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A heavy doping device for reducing the resistivity of a single crystal, comprising a placement barrel (1), wherein a silicon melt is arranged inside the placement barrel (1), a heating component (2) is arranged at the bottom of the inner wall of the placement barrel (1), a plurality of vertical rods (3) are arranged at the top of the heating component (2), and a positioning ring (31) is arranged at the top of the vertical rod (3), characterized in that: The placing barrel (1) is provided with a protective cover (6) inside. The protective cover (6) is made of quartz and has a circular hole on the top. A stabilizing column (7) is fixedly installed inside the circular hole of the protective cover (6). The stabilizing column (7) is installed through an external bracket and is hollow in design. Two inclined plates (8) are fixedly installed at the bottom edge of the stabilizing column (7), and the two inclined plates (8) are symmetrically distributed around the axis of the stabilizing column (7). A doping vessel (9) is fixedly installed at the bottom of the inclined plate (8). A dopant is added inside the doping vessel (9), and the doping vessel (9) is located at the protective cover (6). Inside, a rotating rod (10) is passed through and rotatably installed inside the stabilizing column (7), the bottom of the rotating rod (10) contacts the bottom of the inner wall of the doping vessel (9), a handle is fixedly installed on the top of the rotating rod (10), and a spiral groove is opened on the outer wall of the rotating rod (10), a limiting ring (11) is fixedly installed on the bottom of the stabilizing column (7), and the inner wall of the limiting ring (11) contacts the spiral groove on the outer wall of the rotating rod (10), and a plurality of circular hole plates (12) are equidistantly and fixedly installed on the outer wall of the rotating rod (10), and the plurality of circular hole plates (12) are located inside the doping vessel (9), and a plurality of arc blocks (13) are fixedly installed inside the circular hole plates (12); The plurality of arc-shaped blocks (13) are distributed at equal intervals, and the arc-shaped blocks (13) are located at the edge of the circular hole inside the circular hole plate (12). A tumbling device (4) for rotating and disturbing the silicon melt and the dopant liquid during gas phase mixing is provided below the doping vessel (9); The tumbling device (4) comprises a screw (41), a fixing ring (42), a plurality of connecting rods (43) and a heating ring (44); the top of the screw (41) is rotatably mounted at the bottom center of the doping vessel (9); the inner wall of the fixing ring (42) penetrates through and is fixedly mounted at the center of the outer wall of the screw (41); the ends of the connecting rods (43) close to the outer wall of the screw (41) are fixedly mounted on the outer wall surface of the fixing ring (42); and the inner wall of the heating ring (44) is fixedly mounted on the end of the connecting rod (43) away from the outer wall of the screw (41); The inner wall of the positioning ring (31) contacts the outer wall of the screw rod (41), the connecting rods (43) are equidistantly distributed, and the outer wall of the heating ring (44) contacts the inner wall of the protective cover (6); The tumbling device (4) further comprises a filter plate (45), a resistance block (46), a T-shaped plate (47), a plurality of push plates (48) and a wave plate (49); the bottom of the filter plate (45) is fixedly mounted on the top of the outer wall of the connecting rod (43); the end of the resistance block (46) away from the filter plate (45) is fixedly mounted on the inner wall of the protective cover (6); the end of the T-shaped plate (47) away from the inner wall of the protective cover (6) is penetrated by a spring and is slidably mounted inside the filter plate (45); the resistance block (46) is located at the end of the T-shaped plate (47) away from the filter plate (45). On the end motion trajectory, a plurality of the push plates (48) are equidistantly and slidably mounted inside the filter plate (45), the plurality of the push plates (48) are fixedly connected by a cross bar, and the side of the push plate (48) away from the outer wall of the screw rod (41) is fixedly mounted on the end of the T-shaped plate (47) away from the protective cover (6), and the side of the wave plate (49) away from the outer wall of the screw rod (41) is fixedly mounted on the outer wall of the push plate (48), and a diversion device (5) for diverting and mixing different types of airflows entering the protective cover (6) is provided below the push plate (48).

2. A heavy doping device for reducing single crystal resistivity according to claim 1, characterized in that: The flow dividing device (5) comprises a pulley (51), a groove rod (52) and a plurality of arc-shaped plates (53); the top of the pulley (51) is rotatably mounted inside the push plate (48), and the outer wall of the pulley (51) contacts the bottom of the inner wall of the filter plate (45); the groove rod (52) is fixedly mounted on a vertical surface of the pulley (51) away from the inner wall of the filter plate (45); and the plurality of arc-shaped plates (53) are equidistantly and fixedly mounted on the outer wall surface of the groove rod (52).

3. A heavy doping device for reducing single crystal resistivity according to claim 2, characterized in that: The flow dividing device (5) further comprises a kinetic energy rod (54) and an L-shaped telescopic plate (55); the kinetic energy rod (54) passes through and is fixedly mounted on the outer wall of the pulley (51) on a side close to the inner wall of the filter plate (45); the L-shaped telescopic plate (55) comprises a fixed end and a telescopic end; the fixed end of the L-shaped telescopic plate (55) is fixedly mounted on the outer wall of the filter plate (45) on a side close to the outer wall of the pulley (51); and a square groove is formed inside the telescopic end of the L-shaped telescopic plate (55).

4. A heavy doping device for reducing single crystal resistivity according to claim 3, characterized in that: The flow dividing device (5) further comprises a friction plate (56) and a hinge plate (57), wherein the friction plate (56) is slidably mounted inside a square groove at the telescopic end of the L-shaped telescopic plate (55), and the hinge plate (57) is hinged between a side of the friction plate (56) away from the inner wall of the L-shaped telescopic plate (55) and an outer wall of the filter plate (45) via a torsion spring.

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