A laser-induced passivation machine and passivation method

Abstract

This invention discloses a laser-induced passivation machine, including a conveying mechanism and a laser-induced passivation mechanism. The conveying mechanism includes a conveying track, a transfer module, a temporary storage cavity, and a supplementary cavity. The laser-induced passivation mechanism includes a passivation worktable, a front transfer structure, a four-position transfer station, a conductive structure, a laser structure, and a rear transfer structure. This laser-induced passivation machine connects to the high-temperature furnace used for the final stage of printing, performing laser-induced passivation sintering on the paste at the grid lines on the silicon wafer, reducing sharp parts, improving the efficiency of solar cells, and increasing the photoelectric conversion efficiency of photovoltaic crystalline silicon cells. This invention also discloses a passivation method using the laser-induced passivation machine. Using this passivation method to perform laser-induced passivation on the paste on the grid lines of the silicon wafer can effectively improve the photoelectric conversion efficiency of the cell.

Description

Technical Field

[0001] This invention relates to the technical field of silicon wafer production, and more particularly to a laser-induced passivation machine and passivation method. Background Technology

[0002] Due to defects and surface activity on the surface of solar silicon wafers, they are prone to adsorption and reaction with external gases and water vapor, leading to instability in the surface lifetime of photovoltaic cells and thus affecting photoelectric conversion efficiency. For crystalline silicon solar cells, the continuous improvement of the bulk carrier lifetime of the substrate silicon wafer is no longer the key factor restricting the improvement of cell efficiency. Instead, the passivation of the grid lines on the cell surface has an increasingly significant impact on conversion efficiency. Thinning of silicon wafers is an inevitable trend, but the resulting problem is severe recombination on the cell surface. Therefore, surface passivation technology is essential for both improving the conversion efficiency of solar cells and reducing the production cost of solar cells. Summary of the Invention

[0003] One objective of this invention is to provide a laser-induced passivation machine that connects to the back end of a high-temperature furnace used for printing, to transport and laser-induced passivate silicon wafers, thereby improving the sharp portions of the paste on the electrode grid lines and reducing resistance.

[0004] Another objective of this invention is to provide a passivation method for a laser-induced passivation machine, which is used to perform laser-induced passivation on gate lines on a silicon wafer to improve the photoelectric conversion efficiency of the battery.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] A laser-induced passivation machine includes a conveying mechanism and a laser-induced passivation mechanism;

[0007] The conveying mechanism includes a conveying track, a transfer module, a temporary storage cavity, and a supplementary cavity. The transfer module is located above the conveying track, and the drive end of the transfer module moves between the conveying track, the temporary storage cavity, and the supplementary cavity.

[0008] The laser-induced passivation mechanism includes a passivation stage, a front transfer structure, a four-position transfer station, a conductive structure, a laser structure, and a rear transfer structure. The front transfer structure and the rear transfer structure are located on opposite sides of the passivation stage. The four-position transfer station rotates to the center of the passivation stage. The conductive structure is located to the side of the four-position transfer station. The laser structure is located above the conductive structure. A probe is mounted on the conductive structure and moves vertically up and down. A laser head is mounted on the laser structure and irradiates the four-position transfer station.

[0009] As a preferred technical solution, a flapping motor is provided on the conveying track, and a flapping synchronous pulley is keyed to the drive end of the flapping motor. A flapping synchronous belt is driven by the flapping synchronous pulley, and a flapping plate is fixed on the flapping synchronous belt. A flapping wheel is rotatably connected to the flapping plate.

[0010] As a preferred technical solution, the drive end of the transfer module is equipped with a transfer cylinder, the drive end of the transfer cylinder is vertically connected to a transfer plate, and the transfer plate is provided with a transfer suction nozzle.

[0011] As a preferred technical solution, a trolley is provided on one side of the conveying track, and the temporary storage compartment and the supplementary compartment are both installed on the trolley.

[0012] As a preferred technical solution, a lifting module is installed below the cabinet, and the drive end of the lifting module is vertically connected to the lower end of the supplementary cavity.

[0013] As a preferred technical solution, a silicon wafer clamping mechanism is provided between the conveying mechanism and the laser-induced passivation mechanism. The silicon wafer clamping mechanism includes a positioning base, a servo motor, a connecting rod, and a release clamp. The drive end of the servo motor is vertically connected to a rotating ring. One end of the connecting rod is hinged to the rotating ring, and the other end of the connecting rod is hinged to the inner side of the release clamp. A sliding support plate is fixed around the periphery of the positioning base. An arc-shaped groove is provided on the sliding support plate. A movable shaft is installed on the release clamp, and the end of the movable shaft slides within the arc-shaped groove. A clamping wheel is installed on the release clamp.

[0014] As a preferred technical solution, the four-position transfer station includes a four-position motor and a cross transfer plate. The drive end of the four-position motor is vertically connected to the middle of the cross transfer plate, and passivated placement plates are installed around the cross transfer plate.

[0015] As a preferred technical solution, the conductive structure includes a conductive bracket, a conductive motor, and a conductive connecting plate. The conductive motor is located at the upper end of the conductive bracket, and a conductive lead screw is connected to the driving end of the conductive motor. A conductive nut is fixed on one side of the conductive connecting plate, and the conductive lead screw and the conductive nut are connected by a threaded transmission. The probe is mounted on the conductive connecting plate.

[0016] A passivation method using a laser-induced passivation machine as described above includes the following steps:

[0017] S1, The conveyor track receives silicon wafers output from the high-temperature furnace;

[0018] S2. When the silicon wafer conveying speed is slow, the transfer module picks up silicon wafers from the supplementary cavity to supplement them. When the silicon wafer conveying speed is fast, it picks up the silicon wafers on the conveying track and stores them in the temporary storage cavity.

[0019] S3. The front transfer structure transfers the silicon wafer at the end of the conveyor track to the silicon wafer clamping mechanism for positioning;

[0020] S4. The front transfer structure then transfers the silicon wafer on the silicon wafer clamping mechanism to the four-position transfer station.

[0021] S5, the four-position transfer station moves the silicon wafer to below the conductive structure;

[0022] S6. The conducting structure enables low-voltage conduction of the silicon wafer, and the laser structure induces passivation of the gate lines on the silicon wafer.

[0023] S7, the four-position transfer station moves the silicon wafer away from the conductive structure;

[0024] S8, the post-transfer structure places the silicon wafers from the four transfer stations into the post-transfer structure output.

[0025] The beneficial effects of this invention are as follows: It provides a laser-induced passivation machine, which is connected to a high-temperature furnace used for the final stage of printing, and performs laser-induced passivation sintering on the paste at the grid line position on the silicon wafer, reducing sharp parts, improving the efficiency of solar cells, and improving the photoelectric conversion efficiency of photovoltaic crystalline silicon cells. It also provides a passivation method for the laser-induced passivation machine, which can effectively improve the photoelectric conversion efficiency of the cell by performing laser-induced passivation on the paste on the grid line of the silicon wafer. Attached Figure Description

[0026] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments.

[0027] Figure 1 This is a schematic diagram of the overall structure of a laser-induced passivation machine as described in the embodiment;

[0028] Figure 2 This is a schematic diagram of the conveying mechanism described in the embodiment;

[0029] Figure 3 This is a partial structural diagram of the conveying mechanism described in the embodiment;

[0030] Figure 4 This is a schematic diagram of the silicon wafer clamping mechanism described in the embodiment;

[0031] Figure 5 This is a schematic diagram of the first structure of the laser-induced passivation mechanism described in the embodiment;

[0032] Figure 6This is a schematic diagram of the second structure of the laser-induced passivation mechanism described in the embodiment.

[0033] Figures 1 to 6 middle:

[0034] 1. Conveying mechanism; 101. Conveying track; 102. Transfer module; 103. Temporary storage cavity; 104. Supplementary cavity; 105. Clamping motor; 106. Clamping synchronous pulley; 107. Clamping synchronous belt; 108. Clamping plate; 109. Clamping wheel; 110. Transfer cylinder; 111. Transfer plate; 112. Carrying cabinet; 113. Lifting module;

[0035] 2. Silicon wafer clamping mechanism; 201. Positioning base; 202. Servo motor; 203. Connecting rod; 204. Release clamp; 205. Rotating ring; 206. Sliding support plate; 207. Arc groove; 208. Movable shaft; 209. Clamping wheel; 210. Clamping guide rail; 211. Positioning mounting rod; 212. Positioning groove; 213. Scale; 214. Bearing; 215. Temporary storage rail;

[0036] 3. Laser-induced passivation mechanism; 301. Passivation worktable; 302. Probe; 303. Laser head; 304. Front rotary motor; 305. Feeding adsorption plate; 306. L-shaped adapter plate; 307. Adapter adsorption plate; 308. Cross transfer plate; 309. Passivation placement plate; 310. Rectangular light source; 311. Silicon wafer inspection camera; 312. Conductive bracket; 313. Conductive motor; 314. Conductive connecting plate; 315. Conductive nut; 316. Conductive slider; 317. Conductive mounting strip; 318. Conductive adjustment hole; 319. Laser fixing frame; 320. Laser movable frame; 321. Handwheel; 322. Cleaning bracket; 323. Wool brush; 324. Rear rotary motor; 325. Temporary storage position; 326. Straight strip adapter plate. Detailed Implementation

[0037] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0038] like Figure 1 As shown in this embodiment, a laser-induced passivation machine includes a conveying mechanism 1 and a laser-induced passivation mechanism 3. A silicon wafer clamping mechanism 2 is provided between the conveying mechanism 1 and the laser-induced passivation mechanism 3. The front end of the conveying mechanism is connected to the outlet of a high-temperature furnace for printing, which receives the silicon wafers coming out of the high-temperature furnace and then conveys them to the silicon wafer clamping mechanism 2 for centered positioning and clamping. The laser-induced passivation mechanism 3 then performs passivation treatment on the slurry on the grid lines.

[0039] like Figure 2 and Figure 3As shown, in its specific structure, the conveying mechanism 1 includes a conveying track 101, a transfer module 102, a temporary storage cavity 103, and a supplementary cavity 104. The transfer module 102 is located above the conveying track 101, and its drive end moves between the conveying track 101, the temporary storage cavity 103, and the supplementary cavity 104. A snapping motor 105 is installed on the conveying track 101, and a snapping synchronous pulley 106 is keyed to the drive end of the snapping motor 105. The snapping synchronous pulley 106 is driven by a snapping synchronous belt 107. A flapping plate 108 is fixed, and a flapping wheel 109 is rotatably connected to the flapping plate 108. A transfer cylinder 110 is installed on the drive end of the transfer module 102. A transfer plate 111 is vertically connected to the drive end of the transfer cylinder 110. A transfer suction nozzle is provided on the transfer plate 111. A tray cabinet 112 is provided on one side of the conveying track 101. A temporary storage cavity 103 and a supplementary cavity 104 are both installed on the tray cabinet 112. A lifting module 113 is installed below the tray cabinet 112. The drive end of the lifting module 113 is vertically connected to the lower end of the supplementary cavity 104.

[0040] The conveyor track 101 transports the silicon wafers backward. When passing the mating section, the mating motor 105 controls the mating timing wheel 106 to rotate, and the mating timing belt 107 pulls the mating plate 108 towards the center of the conveyor track 101, matting and centering the silicon wafers on the conveyor track 101. After reaching the position below the transfer module 102, depending on the different conveying efficiencies before and after, if the subsequent silicon wafer transport is slower, the silicon wafers in the high-temperature furnace must also be output. Therefore, the transfer cylinder 110 controls the transfer plate 111 to descend, the transfer nozzle picks up the silicon wafer, and the transfer module 102 moves the silicon wafer to the temporary storage cavity 103; if the subsequent... When the silicon wafers are transported at a high speed, the number of silicon wafers coming out of the high-temperature furnace at the front is insufficient. The transfer module 102 controls the transfer plate 111 to move to the replenishment cavity 104. The transfer nozzle picks up the top silicon wafer on the replenishment cavity 104 and transfers it to the transport track 101. Each time a silicon wafer is taken away, the lifting module 113 controls the replenishment cavity 104 to rise to the height of one silicon wafer, maintaining the height of the highest silicon wafer. Subsequently, after the temporary storage cavity 103 is full or all the silicon wafers in the replenishment cavity 104 are taken away, the tray 112 can be pulled out to take away the silicon wafers in the temporary storage cavity 103, and can also replenish silicon wafers in the replenishment cavity 104.

[0041] like Figure 4As shown, the silicon wafer clamping mechanism 2 includes a positioning base 201, a servo motor 202, a connecting rod 203, and a release clamp 204. The drive end of the servo motor 202 is vertically connected to a rotating ring 205. One end of the connecting rod 203 is hinged to the rotating ring 205, and the other end of the connecting rod 203 is hinged to the inner side of the release clamp 204. A sliding support plate 206 is fixed around the periphery of the positioning base 201. An arc groove 207 is provided on the sliding support plate 206. A movable shaft 208 is installed on the release clamp 204. The end of the movable shaft 208 slides in the arc groove 207. A clamping wheel 209 is installed on the release clamp 204.

[0042] The silicon wafer is placed from the conveyor track 101 onto the positioning base 201. At this time, the release clips 204 around the perimeter unfold outward to make room for the silicon wafer. Then, under the rotation of the drive end, the servo motor 202 pulls the linkage 203 towards the center. Under the movement of the linkage 203, the release clips 204 move towards the center of the positioning base 201. Due to the arc groove 207 on the sliding support plate 206, the release clips 204 with the movable shaft 208 move towards the center of the positioning base 201 while slowly rising under the guidance of the arc groove 207, thereby centering the silicon wafer. The clamping wheel 209 prevents the release clips 204 from hard friction against the periphery of the silicon wafer, effectively protecting the silicon wafer.

[0043] A clamping guide slide rail 210 is fixed on the positioning base 201, and a clamping guide slider is fixed at the lower end of the release clamp 204. The clamping guide slider slides on the clamping guide slide rail 210. During the movement of the release clamp 204, in order to keep the release clamp 204 moving straight towards the center, the sliding connection between the clamping guide slider and the clamping guide slide rail 210 is used for linear guidance.

[0044] The upper end of the release clamp 204 is provided with a positioning mounting rod 211, and the clamping rollers 209 are distributed on the positioning mounting rod 211. The positioning mounting rod 211 is equipped with a positioning groove 212 and a positioning screw. The positioning screw passes through the positioning groove 212 and locks onto the release clamp 204. Depending on the different silicon wafer sizes, the positioning screw can be loosened so that the position of the positioning mounting rod 211 can be adjusted on the release clamp 204. After the position is determined, the positioning screw is then used to lock it through the positioning groove 212.

[0045] The release clamp 204 has a scale 213 on its side. The lower end of the positioning mounting rod 211 and the scale 213 indicate the position of the positioning mounting rod 211. When the positioning mounting rod 211 is moved in the release clamp 204, the position indicated by the scale 213 below the positioning mounting rod 211 also changes. The amount of change can be accurately observed, making it convenient to control the common change position of the four sides.

[0046] A bearing 214 is installed at the end of the movable shaft 208. The bearing 214 rolls in the arc groove 207. By using the limited movement of the bearing 214 in the arc groove 207, the movable shaft 208 pulls the release clamp 204 to the outside and flips downward, and the release clamp 204 moves inward and moves upward, which facilitates the placement and positioning of the silicon wafer.

[0047] The upper end of the positioning base 201 is fixed with a temporary track 215. When the silicon wafer is placed on the positioning base 201, the temporary track 215 supports the silicon wafer and waits for the release clips 204 around it to clamp and position it.

[0048] Once the silicon wafer is positioned by the silicon wafer clamping mechanism 2, it is ready to enter the passivation process.

[0049] like Figure 5 and Figure 6 As shown, the laser-induced passivation mechanism 3 includes a passivation worktable 301, a front transfer structure, a four-position transfer station, a conductive structure, a laser structure, and a rear transfer structure. The front transfer structure and the rear transfer structure are located on both sides of the passivation worktable 301, the four-position transfer station rotates in the middle of the passivation worktable 301, the conductive structure is located on the side of the four-position transfer station, the laser structure is located above the conductive structure, a probe 302 is provided on the conductive structure, the probe 302 moves up and down in the vertical direction, and a laser head 303 is installed on the laser structure, the laser head 303 irradiates the four-position transfer station.

[0050] The front transfer structure transfers the silicon wafer on the silicon wafer clamping mechanism 2 to the four-position transfer station. The four-position transfer station transfers the silicon wafer at the four positions. When the silicon wafer reaches the conduction structure, the conduction structure contacts the paste at the gate line position through the probe 302 to provide a low voltage. The laser head 303 on the laser structure induces passivation treatment on the paste on the silicon wafer. Then the four-position transfer station takes the silicon wafer away from the conduction structure. Finally, the rear transfer structure picks up and removes the silicon wafer.

[0051] The front transfer structure includes a front rotary motor 304 and a silicon wafer clamping mechanism 2. An L-shaped adapter plate 306 is connected to the drive end of the front rotary motor 304. Adapter adsorption plates 307 are installed at both ends of the L-shaped adapter. The silicon wafer clamping mechanism 2 has clamping frames around its perimeter, and the clamping frames move toward the center of the silicon wafer clamping mechanism 2.

[0052] The front transfer structure connects to the rear end of the conveying track 101 and the silicon wafer clamping mechanism 2. The front rotary motor 304 controls the L-shaped adapter plate 306 to rotate horizontally. The adapter adsorption plate 307 adsorbs silicon wafers one by one onto the silicon wafer clamping mechanism 2. The clamping frame moves from all sides to the center to position the silicon wafers at the center of the silicon wafer clamping mechanism 2. At the same time, the L-shaped adapter plate 306 also adsorbs the silicon wafers that were originally positioned on the silicon wafer clamping mechanism 2 onto the four-position transfer station.

[0053] The four-position transfer station includes a four-position motor and a cross transfer plate 308. The drive end of the four-position motor is vertically connected to the middle of the cross transfer plate 308. Passivation placement plates 309 are installed around the cross transfer plate 308. A rectangular light source 310 is installed above the passivation worktable 301. A silicon wafer inspection camera 311 is fixed above the middle of the rectangular light source 310.

[0054] The cross-shaped transfer plate 308 at the four transfer stations has one loading position, one unloading position, and two passivation positions. After the L-shaped adapter plate 306 places the silicon wafer at the loading position, the rectangular light source 310 provides light, and the silicon wafer inspection camera 311 is responsible for detecting the integrity of the silicon wafer. Then, the four-position motor controls the cross-shaped transfer plate 308 to rotate the silicon wafer to the first passivation position for passivation, then to the second passivation position for passivation, and finally from the unloading position to wait for output.

[0055] The conductive structure includes a conductive bracket 312, a conductive motor 313, and a conductive connecting plate 314. The conductive motor 313 is located at the upper end of the conductive bracket 312. The driving end of the conductive motor 313 is connected to a conductive lead screw. A conductive nut 315 is fixed on one side of the conductive connecting plate 314. The conductive lead screw and the conductive nut 315 are connected by a threaded transmission. The probe 302 is mounted on the conductive connecting plate 314. A conductive slide rail is fixed on the conductive bracket 312 along the vertical direction. A conductive slider 316 is fixed on the conductive connecting plate 314. The conductive slider 316 slides on the conductive slide rail. The conductive connecting plate 314 is provided with a conductive mounting strip 317 and several conductive adjustment holes 318. The two sides of the conductive mounting strip 317 are fixed on the conductive adjustment holes 318. The probe 302 is located in the middle of the conductive mounting strip 317.

[0056] After the passivation position is reached, the conducting motor 313 controls the conducting screw to rotate, and the conducting connecting plate 314 with the conducting nut 315 moves downward along the conducting slide rail, connecting the probe 302 to the gate line paste of the silicon wafer. Depending on the position of different gate lines, the conducting mounting strip 317 can be connected to different conducting adjustment holes 318, so that the position of the probe 302 changes. After the probe 302 connects to the gate line paste, it provides a low voltage to facilitate the subsequent passivation process.

[0057] The laser structure includes a laser fixed frame 319 and a laser movable frame 320. A handwheel 321 rotates on the laser fixed frame 319, and a laser lead screw is connected to the middle of the handwheel 321. A laser nut is installed on the laser movable frame 320. The laser lead screw and the laser nut are connected by a threaded transmission. The laser movable frame 320 slides vertically on the laser fixed frame 319, and the laser head 303 is fixed at the lower end of the laser movable frame 320.

[0058] When the conductive structure inputs a low voltage to the silicon wafer, the laser head 303 on the laser movable frame 320 is aligned with the paste to induce passivation irradiation treatment. In order to adapt to the height required by different laser heads 303, the handwheel 321 can be manually turned to make the laser lead screw rotate, and the laser movable frame 320 with the laser nut will move up and down. The laser head 303 also moves up and down with the laser movable frame 320.

[0059] The rear transfer structure includes a rear rotary motor 324 and a temporary storage position 325. A straight strip adapter plate 326 is connected to the drive end of the rear rotary motor 324, and a feeding adsorption plate 305 is installed at the end of the straight strip adapter plate 326.

[0060] After laser-induced passivation, the silicon wafer is moved to the unloading position. Then, the rotary motor 324 controls the unloading adsorption plate 305 on the straight strip transfer plate 326 to adsorb the silicon wafer onto the unloading track, or, depending on the speed of the front and rear conveyors, the silicon wafer is temporarily stored in the temporary storage position 325.

[0061] A cleaning bracket 322 is fixed in front of the passivation workbench 301, and a wool brush 323 is fixed on the cleaning bracket 322. The wool brush 323 is located above the four-position transfer station.

[0062] After the silicon wafers at the unloading position are removed, the empty passivation placement plate 309 returns to the loading position under the action of a four-position motor to wait for the next silicon wafer. During the movement, it can be cleaned by a wool brush 323. After cleaning, the passivation placement plate 309 returns to the front to receive the silicon wafers transferred from the silicon wafer clamping mechanism 2 and continues the laser-induced passivation operation.

[0063] A passivation method applied to the aforementioned laser-induced passivation machine includes the following steps:

[0064] S1, Conveyor track 101 receives silicon wafers output from the high-temperature furnace;

[0065] S2. When the silicon wafer conveying speed is slow, the transfer module 102 grabs silicon wafers from the supplementary cavity 104 for supplementation, and when the silicon wafer conveying speed is fast, it grabs silicon wafers on the conveying track 101 and stores them in the temporary storage cavity 103.

[0066] S3. The front transfer structure transfers the silicon wafer at the end of the conveying track 101 to the silicon wafer clamping mechanism 2 for positioning;

[0067] S4. The front transfer structure then transfers the silicon wafer on the silicon wafer clamping mechanism 2 to the four-position transfer station.

[0068] S5, the four-position transfer station moves the silicon wafer to below the conductive structure;

[0069] S6. The conducting structure enables low-voltage conduction of the silicon wafer, and the laser structure induces passivation of the gate lines on the silicon wafer.

[0070] S7, the four-position transfer station moves the silicon wafer away from the conductive structure;

[0071] S8, the post-transfer structure places the silicon wafers from the four transfer stations into the post-transfer structure output.

[0072] It should be stated that the above specific embodiments are merely preferred embodiments of the present invention and the technical principles applied thereto. Within the scope of the technology disclosed in the present invention, any variations or substitutions that are easily conceived by those skilled in the art should be covered within the protection scope of the present invention.

Claims

1. A laser-induced passivation machine, characterized in that, Includes a delivery mechanism and a laser-induced passivation mechanism; The conveying mechanism includes a conveying track, a transfer module, a temporary storage cavity, and a supplementary cavity. The transfer module is located above the conveying track, and the drive end of the transfer module moves between the conveying track, the temporary storage cavity, and the supplementary cavity. The laser-induced passivation mechanism includes a passivation stage, a front transfer structure, a four-position transfer station, a conductive structure, a laser structure, and a rear transfer structure. The front transfer structure and the rear transfer structure are located on opposite sides of the passivation stage. The four-position transfer station rotates to the center of the passivation stage. The conductive structure is located to the side of the four-position transfer station. The laser structure is located above the conductive structure. A probe is provided on the conductive structure, and the probe moves up and down in a vertical direction. A laser head is mounted on the laser structure, and the laser head irradiates the four-position transfer station. The conductive structure includes a conductive bracket, a conductive motor, and a conductive connecting plate. The conductive motor is located at the upper end of the conductive bracket. A conductive lead screw is connected to the driving end of the conductive motor. A conductive nut is fixed on one side of the conductive connecting plate. The conductive lead screw and the conductive nut are connected by a threaded transmission. The probe is mounted on the conductive connecting plate.

2. The laser-induced passivation machine according to claim 1, characterized in that, A flapping motor is installed on the conveying track. The drive end of the flapping motor is keyed to a flapping synchronous pulley. The flapping synchronous pulley is driven by a flapping synchronous belt. A flapping plate is fixed on the flapping synchronous belt, and a flapping wheel is rotatably connected to the flapping plate.

3. The laser-induced passivation machine according to claim 1, characterized in that, The transfer module is equipped with a transfer cylinder at its drive end, and a transfer plate is vertically connected to the drive end of the transfer cylinder. A transfer nozzle is provided on the transfer plate.

4. The laser-induced passivation machine according to claim 1, characterized in that, A storage cabinet is provided on one side of the conveyor track, and the temporary storage compartment and the supplementary compartment are both installed on the storage cabinet.

5. A laser-induced passivation machine according to claim 4, characterized in that, A lifting module is installed below the trolley, and the drive end of the lifting module is vertically connected to the lower end of the supplementary cavity.

6. The laser-induced passivation machine according to claim 1, characterized in that, A silicon wafer clamping mechanism is provided between the conveying mechanism and the laser-induced passivation mechanism. The silicon wafer clamping mechanism includes a positioning base, a servo motor, a connecting rod, and a release clamp. The drive end of the servo motor is vertically connected to a rotating ring. One end of the connecting rod is hinged to the rotating ring, and the other end of the connecting rod is hinged to the inner side of the release clamp. A sliding support plate is fixed around the periphery of the positioning base. An arc-shaped groove is provided on the sliding support plate. A movable shaft is installed on the release clamp, and the end of the movable shaft slides in the arc-shaped groove. A clamping wheel is installed on the release clamp.

7. The laser-induced passivation machine according to claim 1, characterized in that, The four-position transfer station includes a four-position motor and a cross transfer plate. The drive end of the four-position motor is vertically connected to the middle of the cross transfer plate, and passivation placement plates are installed around the cross transfer plate.

8. A passivation method using a laser-induced passivation machine according to any one of claims 1-7, characterized in that, Includes the following steps: S1, The conveyor track receives silicon wafers output from the high-temperature furnace; S2. When the silicon wafer conveying speed is slow, the transfer module picks up silicon wafers from the supplementary cavity to supplement them. When the silicon wafer conveying speed is fast, it picks up the silicon wafers on the conveying track and stores them in the temporary storage cavity. S3. The front transfer structure transfers the silicon wafer at the end of the conveyor track to the silicon wafer clamping mechanism for positioning; S4. The front transfer structure then transfers the silicon wafer on the silicon wafer clamping mechanism to the four-position transfer station. S5, the four-position transfer station moves the silicon wafer to below the conductive structure; S6. The conducting structure enables low-voltage conduction of the silicon wafer, and the laser structure induces passivation of the gate lines on the silicon wafer. S7, the four-position transfer station moves the silicon wafer away from the conductive structure; S8, the post-transfer structure places the silicon wafers from the four transfer stations into the post-transfer structure output.

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