A highly selective filtering dielectric resonator antenna based on SISL

Abstract

The present invention discloses a highly selective filter dielectric resonator antenna based on SISL, wherein a first antenna layer is provided with a first circular area on a side away from a second antenna layer, and a second circular area on a side close to the second antenna layer. A first cylindrical cavity is provided at the center of the second antenna layer, a ring dielectric resonator is provided in the first cylindrical cavity, and a cylindrical dielectric resonator is provided at the center of the ring dielectric resonator. A first rectangular area is provided at the side close to the second antenna layer of the third antenna layer, and a third circular area is provided at the side close to the fourth antenna layer. The circular metal patch and the feeding microstrip provided in the first rectangular area are connected by multiple feeding branches. A second cylindrical cavity is provided at the center of the fourth antenna layer, and a circle of first metal through-holes is provided around the second cylindrical cavity. The fifth antenna layer is provided with a circle of second metal through-holes corresponding one-to-one with the first metal through-holes. Based on this, the high selectivity of the filter dielectric resonator antenna is achieved.

Description

Technical Field

[0001] The present invention belongs to the technical field of filtering antennas, and in particular relates to a highly selective filtering dielectric resonator antenna based on SISL (Substrate Integrated Suspended Line). Background Art

[0002] With the development of wireless communication technology, the integration and performance of active components have greatly improved, while passive components remain a significant factor restricting the size of communication equipment. Therefore, RF front-end circuits need to develop towards integration and high performance. The antenna and filter in the RF front-end are two important components in communication systems, and they also occupy a relatively large space. The fusion design of filter antennas, starting from the perspective of antenna design, takes into account the dual functions of radiation and filtering. This can effectively reduce the size and loss of the RF front-end, improve overall performance, and has gradually become a hot topic of current research. Dielectric resonators have the advantages of easy excitation, low loss, high radiation efficiency, and design flexibility. A filter dielectric resonator antenna, which combines a filter antenna and a dielectric resonator into an integrated design, combines the advantages of both. These advantages have led to its widespread application in modern wireless systems.

[0003] Current filtering dielectric resonator antennas all have the problem of low edge selectivity. For example, a patent application with publication number CN113381171A discloses a compact filtering dielectric resonator antenna based on a SISL structure, which proposes a filtering dielectric resonator antenna based on a SISL structure and fed by three feeding methods: rectangular feed line, feeding metal through hole and T-type feed line. The impedance bandwidth of the antenna is less than 10%, while its low-frequency selectivity is 104dB / GHz, and its high-frequency selectivity is only 44dB / GHz, and the bandwidth is less than 10%, which cannot meet the broadband and high selectivity requirements of the filtering antenna. In 2022, Dong-Sheng La, Chao Zhang, Yu-Jiao Zhang, Ting-Xue Jiang, and Mei-Jun Qu published an article in the document "AWideband Filtering Dielectric Resonator Antenna Based on the HEM 11δ Mode,"inIEEE Antennas and Wireless Propagation Letters,vol.21,no.8,pp.1552-1556,Aug.2022. 11δA high-frequency filtering dielectric resonator antenna with a 1.5-mode feed structure, consisting of a driven ring, a parasitic ring, and a driven arc, achieves high-frequency selectivity. The antenna achieves low-frequency selectivity of 194 dB / GHz and high-frequency selectivity of 133 dB / GHz. While this solution achieves high selectivity and broadband, its profile is high and its selectivity needs to be improved, failing to meet the requirements for overall antenna miniaturization. In 2023, Shuxuan Liu and Yuandan Dong, in "A High Selectivity Filtering Dielectric Resonator Antenna with Stub-Loading," presented at the 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, introduced a radiation null by adding short-circuited and open-circuited stubs. While this reduced the antenna's profile, its selectivity remained relatively low, achieving low-frequency selectivity of 130.3 dB / GHz and high-frequency selectivity of 139.6 dB / GHz, reducing the antenna's practical performance.

[0004] In summary, there is an urgent need for a filtering dielectric resonator antenna with a compact structure, low profile and high selectivity. Summary of the Invention

[0005] In order to solve the above problems existing in the prior art, the present invention provides a highly selective filtering dielectric resonator antenna based on SISL.

[0006] The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0007] The present invention provides a highly selective filtering dielectric resonator antenna based on SISL, comprising a first antenna layer, a second antenna layer, a third antenna layer, a fourth antenna layer, and a fifth antenna layer stacked in sequence; each antenna layer comprises a dielectric substrate and metal layers stacked on both sides of the dielectric substrate;

[0008] A first circular area is provided on a side of the first antenna layer away from the second antenna layer; a second circular area is provided on a side of the first antenna layer close to the second antenna layer; and the metal layers within the first circular area and the second circular area are removed;

[0009] A first cylindrical cavity is provided at the center of the second antenna layer; a ring dielectric resonator is provided in the first cylindrical cavity; a cylindrical dielectric resonator is provided at the center of the ring dielectric resonator; the outer diameter of the ring dielectric resonator is smaller than the diameter of the first cylindrical cavity;

[0010] A first rectangular area is provided on a side of the third antenna layer close to the second antenna layer, and a third circular area is provided on a side of the third antenna layer close to the fourth antenna layer; the metal layers within the first rectangular area and the third circular area are removed; a circular metal patch and a feed microstrip are provided within the first rectangular area; the circular metal patch and the feed microstrip are connected via a plurality of feed branches; the feed microstrip is externally connected to an antenna feed line;

[0011] A second cylindrical cavity is provided at the center of the fourth antenna layer; a circle of first metal through holes is provided around the second cylindrical cavity;

[0012] The fifth antenna layer is provided with a circle of second metal through holes; the second metal through holes correspond one-to-one with the first metal through holes;

[0013] The projections of the centers of the first circular area, the first cylindrical cavity, the second circular area, the third circular area, the circular metal patch and the second cylindrical cavity in the target direction coincide with each other; the target direction is a direction perpendicular to each antenna layer.

[0014] Optionally, the diameter of the second cylindrical cavity is greater than the diameter of the first cylindrical cavity.

[0015] Optionally, the first antenna layer and the second antenna layer are provided with rectangular notches, and positions of the rectangular notches correspond to positions of feeder lines of the antenna feeder.

[0016] Optionally, the first antenna layer, the second antenna layer, the third antenna layer, the fourth antenna layer and the fifth antenna layer are combined together by rivets.

[0017] Optionally, the feeding microstrip includes a feeding plate and a first rectangular microstrip; one end of the feeding plate is connected to the circular metal patch through the multiple feeding branches; the other end of the feeding plate is connected to the first rectangular microstrip;

[0018] A second rectangular area is further provided on a side of the third antenna layer adjacent to the second antenna layer; one end of the second rectangular area is connected to the first rectangular area, and the other end extends to the edge of the third antenna layer; the metal layer within the second rectangular area is removed; a second rectangular microstrip is provided within the second rectangular area; one end of the second rectangular microstrip is connected to the first rectangular microstrip, and the other end of the second rectangular microstrip extends to the edge of the third antenna layer, externally connected to the antenna feed line;

[0019] The width of the second rectangular microstrip is smaller than the width of the first rectangular microstrip.

[0020] Optionally, the multiple feed branches include a first feed branch, a second feed branch and a third feed branch arranged in parallel; the second feed branch, the first rectangular microstrip and the second rectangular microstrip are located on the same straight line; the first feed branch and the third feed branch are respectively located on both sides of the straight line; the straight line is a symmetry axis of the feed sheet.

[0021] Optionally, the length of the feed plate is 2.7 mm, and the width of the feed plate is 2.9 mm; the length of the first rectangular microstrip is 4.8 mm, and the width of the first rectangular microstrip is 1.9 mm; the length of the second rectangular microstrip is 6 mm, and the width of the second rectangular microstrip is 0.5 mm.

[0022] Optionally, the diameter of the cylindrical dielectric resonator is smaller than the inner diameter of the annular dielectric resonator.

[0023] Optionally, the diameter of the first cylindrical cavity is 12 mm; the inner diameter of the annular dielectric resonator is 5 mm, the outer diameter of the annular dielectric resonator is 10 mm; the height of the annular dielectric resonator is 2 mm; the diameter of the cylindrical dielectric resonator is 4 mm; and the height of the cylindrical dielectric resonator is 2 mm.

[0024] Optionally, the thickness of the dielectric substrate in the first antenna layer is 0.6 mm; the thickness of the dielectric substrate in the second antenna layer is 2.1 mm; the thickness of the dielectric substrate in the third antenna layer is 0.4 mm; the thickness of the dielectric substrate in the fourth antenna layer is 2 mm; and the thickness of the dielectric substrate in the fifth antenna layer is 0.6 mm.

[0025] The present invention provides a highly selective filter dielectric resonator antenna based on SISL. By connecting a circular metal patch and multiple feed branches of a feed microstrip, the internal electric fields of the excited annular dielectric resonator and cylindrical dielectric resonator are equal in magnitude and opposite in phase, generating a low-frequency null and aligning it toward the lower edge of the passband, thereby improving the antenna's low-frequency selectivity. The outer diameter of the annular dielectric resonator is smaller than the diameter of the first cylindrical cavity at the center of the second antenna layer. This creates a gap between the annular dielectric resonator and the second antenna layer, allowing the high-frequency null to be aligned toward the upper edge of the passband, thereby improving the antenna's high-frequency selectivity. This achieves high selectivity for the filter dielectric resonator antenna.

[0026] In addition, the highly selective filtering dielectric resonator antenna provided by the present invention is based on a SISL structure and does not require an additional filtering circuit. Therefore, it has the characteristics of compact structure, low profile and small size, which facilitates miniaturization and high integration of the system.

[0027] The present invention will be further described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 1 is a schematic structural diagram of a highly selective filtering dielectric resonator antenna based on SISL provided by an embodiment of the present invention;

[0029] Figure 2 is a side view of a dielectric resonator provided by an embodiment of the present invention;

[0030] Figure 3 is a top view of a fourth antenna layer provided by an embodiment of the present invention;

[0031] Figure 4 is a top view of a third antenna layer provided by an embodiment of the present invention;

[0032] Figure 5 is a top view of the second antenna layer provided by an embodiment of the present invention;

[0033] Figure 6 Schematic diagram of the relative bandwidth |S11| of the highly selective filtering dielectric resonator antenna based on SISL provided by an embodiment of the present invention;

[0034] Figure 7 It is a gain diagram of the highly selective filtering dielectric resonator antenna based on SISL provided by the present invention.

[0035] Figure numerals: 1. first antenna layer; 2. second antenna layer; 3. third antenna layer; 4. fourth antenna layer; 5. fifth antenna layer; 6. rivet hole; 11. first front metal layer; 12. first back metal layer; 21. second front metal layer; 22. second back metal layer; 23. first cylindrical cavity; 24. annular dielectric resonator; 25. cylindrical dielectric resonator; 31. third front metal layer; 32. third back metal layer; 33. feeding plate; 34. second feeding branch; 35. first feeding branch; 36. third feeding branch; 37. circular metal patch; 41. fourth front metal layer; 42. fourth back metal layer; 43. second cylindrical cavity; 51. fifth front metal layer; 52. fifth back metal layer. DETAILED DESCRIPTION

[0036] The present invention will be further described in detail below with reference to specific examples, but the embodiments of the present invention are not limited thereto.

[0037] In order to solve the problems of high profile and low selectivity of existing filter dielectric resonator antennas, the embodiment of the present invention provides a high-selectivity filter dielectric resonator antenna based on SISL, see Figure 1 , Figure 1This is a schematic diagram of the structure of a highly selective filtering dielectric resonator antenna based on SISL, provided in an embodiment of the present invention. The highly selective filtering dielectric resonator antenna based on SISL includes a first antenna layer 1, a second antenna layer 2, a third antenna layer 3, a fourth antenna layer 4, and a fifth antenna layer 5, which are stacked in sequence. Each antenna layer includes a dielectric substrate and metal layers stacked on both sides of the dielectric substrate.

[0038] In the embodiment of the present invention, the dielectric substrate included in each antenna layer is made of FR4 material with a relative dielectric constant of 4.4. FR4 material has the characteristics of high strength, good heat resistance and low cost compared to copper clad laminates.

[0039] The following will be combined Figure 1 , each antenna layer in the SISL-based high-selectivity filtering dielectric resonator antenna is described in turn.

[0040] In this embodiment of the present invention, a first circular area is provided on the side of the first antenna layer 1 facing away from the second antenna layer 2. The metal layer within the first circular area is removed to form a first front metal layer 11. A second circular area is provided on the side of the first antenna layer 1 facing the second antenna layer 2. The metal layer within the second circular area is removed to form a first back metal layer 12.

[0041] In this embodiment of the present invention, a first cylindrical cavity 23 is provided at the center of the second antenna layer 2; a ring dielectric resonator 24 is located within the first cylindrical cavity 23; and a cylindrical dielectric resonator 25 is located at the center of the ring dielectric resonator 24. The surface of the second antenna layer 2 closest to the first antenna layer 1 is a second front metal layer 21, and the surface of the second antenna layer 2 closest to the third antenna layer 3 is a second back metal layer 22.

[0042] The annular dielectric resonator 24 and the cylindrical dielectric resonator 25 are both made of a dielectric material with a dielectric constant of 38.4. The cylindrical dielectric resonator 25 and the annular dielectric resonator 24 can also be replaced by other dielectric resonators with similar relative dielectric constants.

[0043] In addition, a circular area with a radius of 8.8 mm is also provided on each side of the second antenna layer 2, and the metal layer in the circular area is removed. The circular area is arranged concentrically with the annular dielectric resonator 24 and the cylindrical dielectric resonator 25.

[0044] See also Figure 2 , Figure 2 This is a side view of a dielectric resonator provided by an embodiment of the present invention. The outer diameter of the annular dielectric resonator 24 is smaller than the diameter of the first cylindrical cavity 23, and a gap exists between the annular dielectric resonator 24 and the second antenna layer 2. For example, the outer diameter of the annular dielectric resonator 24 is 10 mm, and the diameter of the first cylindrical cavity 23 is 12 mm.

[0045] In this embodiment of the present invention, a first rectangular region is defined on the side of the third antenna layer 3 adjacent to the second antenna layer 2. The metal layer within the first rectangular region is removed to form a third front metal layer 31. A third circular region is defined on the side of the third antenna layer 3 adjacent to the fourth antenna layer 4. The metal layer within the third circular region is removed to form a third back metal layer 32.

[0046] In addition, on the side of the third antenna layer 3 near the second antenna layer 2, in addition to the metal layer within the first rectangular area being removed, a fourth circular area is also provided on the side of the third antenna layer 3 near the second antenna layer 2. The metal layer within the fourth circular area is also removed. The projections of the centers of the fourth circular area, the first circular area, and the second circular area coincide with each other in the target direction, which is perpendicular to each antenna layer.

[0047] In this embodiment of the present invention, a circular metal patch 37 and a feed microstrip are disposed within the first rectangular region. The circular metal patch 37 and the feed microstrip are connected via multiple feed branches. The feed microstrip is externally connected to the antenna feed line. The multiple feed branches can be three parallel rectangular shapes of equal length and width.

[0048] See also Figure 3 , Figure 3 This is a top view of the fourth antenna layer according to an embodiment of the present invention. A second cylindrical cavity 43 is defined in the center of fourth antenna layer 4. A circle of first metal vias surrounds second cylindrical cavity 43. The surface of fourth antenna layer 4 near third antenna layer 3 is a fourth front metal layer 41, while the surface of fourth antenna layer 4 near fifth antenna layer 5 is a fourth back metal layer 42.

[0049] In this embodiment of the present invention, the fifth antenna layer 5 is provided with a circle of second metal vias, each corresponding to a first metal via. The side of the fifth antenna layer 5 closest to the fourth antenna layer 4 is a fifth front metal layer 51, while the side of the fifth antenna layer 5 further from the fourth antenna layer 4 is a fifth back metal layer 52. The first metal vias are cylindrical electroplated metal vias.

[0050] In this embodiment of the present invention, the projections of the centers of the first circular area, the first cylindrical cavity 23, the second circular area, the third circular area, the circular metal patch 37, the second cylindrical cavity 43, and the fourth circular area coincide with each other in the target direction. The target direction is a direction perpendicular to each antenna layer.

[0051] In the embodiment of the present invention, the radius of the first circular area, the second circular area, the third circular area, and the fourth circular area are all 8.8 mm, and the radius of the circular metal patch 37 is 2.2 mm.

[0052] In this embodiment of the present invention, by connecting the circular metal patch 37 and the multiple feed branches of the feed microstrip, the internal electric fields of the excited annular dielectric resonator 24 and cylindrical dielectric resonator 25 are made equal in magnitude and opposite in phase, thereby generating a low-frequency zero point and aligning the low-frequency zero point toward the lower edge of the passband, thereby improving the antenna's low-frequency selectivity. The outer diameter of the annular dielectric resonator 24 is smaller than the diameter of the first cylindrical cavity 23 provided at the center of the second antenna layer 2. Therefore, a gap exists between the annular dielectric resonator 24 and the second antenna layer 2. This gap allows the high-frequency zero point to be aligned toward the upper edge of the passband, thereby improving the antenna's high-frequency selectivity. This achieves high selectivity for the filter dielectric resonator antenna.

[0053] In addition, the highly selective filtering dielectric resonator antenna provided by the embodiment of the present invention is based on the SISL structure and does not require an additional filtering circuit. Therefore, it has the characteristics of compact structure, low profile and small size, which facilitates miniaturization and high integration of the system.

[0054] In one implementation, the diameter of the second cylindrical cavity 43 is greater than the diameter of the first cylindrical cavity 23. For example, the diameter of the first cylindrical cavity 23 is 12 mm, and the diameter of the second cylindrical cavity 43 may be 16 mm.

[0055] In one implementation, the first antenna layer 1 and the second antenna layer 2 are provided with rectangular notches, and the positions of the rectangular notches correspond to the positions of the feeder lines of the antenna.

[0056] In an embodiment of the present invention, the width of the rectangular recess may be 5 mm, and the length thereof may be 15 mm.

[0057] The positions of the rectangular notches of the first antenna layer 1 and the second antenna layer 2 correspond to the feed line positions of the antenna feed line, so that the feed microstrip provided on the side of the third antenna layer 3 close to the second antenna layer 2 can be conveniently and accurately connected to the antenna feed line.

[0058] In one implementation, the first antenna layer 1 , the second antenna layer 2 , the third antenna layer 3 , the fourth antenna layer 4 and the fifth antenna layer 5 are combined together by rivets.

[0059] A plurality of rivet holes 6, through which rivets can be inserted, are provided on each of first antenna layer 1, second antenna layer 2, third antenna layer 3, fourth antenna layer 4, and fifth antenna layer 5. By inserting rivets into rivet holes 6, first antenna layer 1, second antenna layer 2, third antenna layer 3, fourth antenna layer 4, and fifth antenna layer 5 can be combined.

[0060] Specifically, six rivet holes 6 can be provided in the third antenna layer 3, the fourth antenna layer 4 and the fifth antenna layer 5, of which two rivet holes 6 are arranged at positions corresponding to the rectangular recesses of the first antenna layer 1 and the second antenna layer 2. Therefore, four rivet holes 6 can be provided in the first antenna layer 1 and the second antenna layer 2.

[0061] The radius of the rivet hole 6 can be selected according to the selected rivet. For example, the radius of the rivet hole 6 can be 1.1 mm.

[0062] See also Figure 4 , Figure 4 : This is a top view of the third antenna layer provided by an embodiment of the present invention. The feed microstrip includes a feed plate 33 and a first rectangular microstrip; one end of the feed plate 33 is connected to the circular metal patch 37 through a plurality of feed branches; the other end of the feed plate 33 is connected to the first rectangular microstrip. A second rectangular area is also provided on the side of the third antenna layer 3 close to the second antenna layer 2; one end of the second rectangular area is connected to the first rectangular area, and the other end extends to the edge of the third antenna layer 3; the metal layer in the second rectangular area is removed; a second rectangular microstrip is provided in the second rectangular area; one end of the second rectangular microstrip is connected to the first rectangular microstrip, and the other end of the second rectangular microstrip extends to the edge of the third antenna layer 3, with an external antenna feed line.

[0063] In an embodiment of the present invention, the width of the second rectangular area is smaller than the width of the first rectangular area. The first rectangular area has a width of 15 mm and a length of 25 mm, while the second rectangular area has a width of 5 mm and a length of 6 mm.

[0064] In the embodiment of the present invention, the connection between the feed plate 33 and the first rectangular microstrip, and the connection between the second rectangular microstrip and the first rectangular microstrip, are both chamfered. This chamfering can change the current distribution between the feed plate 33, the first rectangular microstrip, and the second rectangular microstrip, improving the matching effect and thus optimizing impedance matching.

[0065] The lengths and widths of the feed plate 33 , the first rectangular microstrip, and the second rectangular microstrip are all different. The width of the second rectangular microstrip is smaller than that of the first rectangular microstrip; and the width of the first rectangular microstrip is smaller than that of the feed plate 33 .

[0066] Furthermore, the length of the feed plate 33 is 2.7 mm, and the width of the feed plate 33 is 2.9 mm; the length of the first rectangular microstrip is 4.8 mm, and the width of the first rectangular microstrip is 1.9 mm; the length of the second rectangular microstrip is 6 mm, and the width of the second rectangular microstrip is 0.5 mm.

[0067] See also Figure 4The multiple feed branches include a first feed branch 35, a second feed branch 34, and a third feed branch 36, which are arranged in parallel. The second feed branch 34, the first rectangular microstrip, and the second rectangular microstrip are located on the same straight line. The first feed branch 35 and the third feed branch 36 are located on either side of the straight line. The straight line is an axis of symmetry of the feed strip 33 and also the transverse center axis of the third antenna layer 3.

[0068] The multiple feed branches at one end of the feed plate 33 can be used to make the electric fields within the excited cylindrical dielectric resonator 25 and the annular dielectric resonator 24 equal in magnitude and opposite in phase, thereby generating a zero point at low frequencies. Specifically, the second feed branch 34 can generate a low-frequency zero point at the lower edge of the passband. The first feed branch 35 and the second feed branch 34 can redistribute the current on the feed plate 33, the first rectangular microstrip, and the second rectangular microstrip, bringing the low-frequency zero point closer to the lower edge of the passband, thereby improving the antenna's low-frequency selectivity.

[0069] See also Figure 5 , Figure 5 This is a top view of the second antenna layer provided by an embodiment of the present invention. The diameter of cylindrical dielectric resonator 25 is smaller than the inner diameter of annular dielectric resonator 24. This means there is no direct contact between cylindrical and annular dielectric resonators 25 and 24, but rather a gap. The circular metal patch 37 of third antenna layer 3 and the gap between cylindrical and annular dielectric resonators 25 and 24 disturb the internal electric fields of these two resonators, further improving the impedance matching within the antenna's passband.

[0070] In one implementation, the outer diameter of the annular dielectric resonator 24 is smaller than the diameter of the first cylindrical cavity 23. That is, there is no direct contact between the annular dielectric resonator 24 and the second antenna layer 2, but rather a gap. This gap between the annular dielectric resonator 24 and the second antenna layer 2 redistributes the electric field within the annular dielectric resonator 24, weakening its internal electric field and shifting the zero point toward lower frequencies, thereby improving low-frequency selectivity.

[0071] In one implementation, the diameter of the first cylindrical cavity 23 is 12 mm; the inner diameter of the annular dielectric resonator 24 is 5 mm, and the outer diameter of the annular dielectric resonator 24 is 10 mm; the height of the annular dielectric resonator is 2 mm; the diameter of the cylindrical dielectric resonator 25 is 4 mm, and the height of the cylindrical dielectric resonator 25 is 2 mm.

[0072] In one implementation, the dielectric substrate in each antenna layer (excluding the rectangular notch) is a rectangular parallelepiped structure, with each substrate having the same length and width. Each dielectric substrate is 31 mm long and 25 mm wide. Each dielectric substrate has a different thickness. Specifically, the dielectric substrate in the first antenna layer 1 is 0.6 mm thick; the dielectric substrate in the second antenna layer 2 is 2.1 mm thick; the dielectric substrate in the third antenna layer 3 is 0.4 mm thick; the dielectric substrate in the fourth antenna layer 4 is 2 mm thick; and the dielectric substrate in the fifth antenna layer 5 is 0.6 mm thick.

[0073] The following is a simulation experiment to further illustrate the technical effects of the present invention:

[0074] Simulation parameters are set as follows: the dielectric substrate thickness in the first antenna layer 1 is 0.6 mm; the dielectric substrate thickness in the second antenna layer 2 is 2.1 mm; the dielectric substrate thickness in the third antenna layer 3 is 0.4 mm; the dielectric substrate thickness in the fourth antenna layer 4 is 2 mm; and the dielectric substrate thickness in the fifth antenna layer 5 is 0.6 mm. Each dielectric substrate is 31 mm long and 25 mm wide. The diameter of the first cylindrical cavity 23 is 12 mm. The radii of the first, second, third, and fourth circular regions are all 8.8 mm. The radius of the circular metal patch 37 is 2.2 mm. The diameter of the second cylindrical cavity 43 is 16 mm. The rectangular notches in the first and second antenna layers 1 and 2 are 5 mm wide and 15 mm long. The radius of the rivet hole 6 is 1.1 mm. The width of the first rectangular region is 15 mm and its length is 25 mm. The length of the feed plate 33 is 2.7 mm, and the width of the feed plate 33 is 2.9 mm; the length of the first rectangular microstrip is 4.8 mm, and the width of the first rectangular microstrip is 1.9 mm; the length of the second rectangular microstrip is 6 mm, and the width of the second rectangular microstrip is 0.5 mm. The inner diameter of the annular dielectric resonator 24 is 5 mm, and the outer diameter of the annular dielectric resonator 24 is 10 mm; the diameter of the cylindrical dielectric resonator 25 is 4 mm, and the height of the cylindrical dielectric resonator 25 is 2 mm. Both the annular dielectric resonator 24 and the cylindrical dielectric resonator 25 are made of a dielectric material with a dielectric constant of 38.4, and their height is 2 mm. The dielectric substrate included in each antenna layer is made of FR4 board material with a relative dielectric constant of 4.4.

[0075] The simulation experiment was carried out using the SISL-based high-selectivity filter dielectric resonator antenna under the above simulation parameters. Figure 6 and Figure 7The simulation results show that the SISL-based high-selectivity filter dielectric resonator antenna achieves an impedance bandwidth of 20.7%, a selectivity of 109dB / GHz in the low-frequency band, and a selectivity of 602dB / GHz in the high-frequency band, which is superior to the selectivity of the filter dielectric resonator antenna proposed in existing solutions. The SISL-based high-selectivity filter dielectric resonator antenna provided in this embodiment of the present invention has a low profile of only 0.159λ0, overcoming the problems of narrow bandwidth, low selectivity, and excessive antenna size in existing solutions, and can be widely used in modern wireless communication systems.

[0076] in, Figure 6 1 is a schematic diagram of the relative bandwidth |S11| of the highly selective filtering dielectric resonator antenna based on SISL provided by an embodiment of the present invention, wherein the abscissa represents frequency in GHz, and the ordinate represents the relative bandwidth |S11| in dB; Figure 7 3 is a gain diagram of the highly selective filtering dielectric resonator antenna based on SISL provided by the present invention, wherein the abscissa represents frequency in GHz, and the ordinate represents realize gain in dBi.

[0077] The SISL-based filtering dielectric resonator antenna provided in the embodiment of the present invention retains the advantages of dielectric resonator antennas such as easy excitation, low loss, high radiation efficiency and flexible design, while overcoming the problem of traditional dielectric resonator antennas being too large in size, facilitating the miniaturization and high integration of the system, and meeting the requirements of filtering antennas for high selectivity in practical applications. It has better practical application value in various future wireless communication systems and has good application prospects.

[0078] It should be noted that the terms "first," "second," and the like are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the present invention described herein can be implemented in sequences other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are merely examples of devices and methods consistent with some aspects of the present invention.

[0079] In the description of this specification, the reference terms "one embodiment," "some embodiments," "example," "specific example," or "some examples" mean that the specific features or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features or characteristics described can be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

[0080] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art can understand and implement other variations of the disclosed embodiments by viewing the drawings and the disclosed content. In the description of the present invention, the word "comprising" does not exclude other components or steps, "one" or "a" does not exclude multiple situations, and "multiple" means two or more, unless otherwise clearly and specifically defined. In addition, certain measures are recorded in different embodiments, but this does not mean that these measures cannot be combined to produce good results.

[0081] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0082] In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0083] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0084] The above is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention should not be considered to be limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

Claims

1. A highly selective filtering dielectric resonator antenna based on SISL, characterized in that: It comprises a first antenna layer, a second antenna layer, a third antenna layer, a fourth antenna layer and a fifth antenna layer stacked in sequence; each antenna layer comprises a dielectric substrate and metal layers stacked on both sides of the dielectric substrate; A first circular area is provided on a side of the first antenna layer away from the second antenna layer; a second circular area is provided on a side of the first antenna layer close to the second antenna layer; and the metal layers within the first circular area and the second circular area are removed; A first cylindrical cavity is provided at the center of the second antenna layer; A ring dielectric resonator is provided in the first cylindrical cavity; A cylindrical dielectric resonator is provided at the center of the annular dielectric resonator; the outer diameter of the annular dielectric resonator is smaller than the diameter of the first cylindrical cavity; A first rectangular area is provided on a side of the third antenna layer close to the second antenna layer, and a third circular area is provided on a side of the third antenna layer close to the fourth antenna layer; the metal layers within the first rectangular area and the third circular area are removed; a circular metal patch and a feed microstrip are provided within the first rectangular area; the circular metal patch and the feed microstrip are connected via a plurality of feed branches; the feed microstrip is externally connected to an antenna feed line; A second cylindrical cavity is provided at the center of the fourth antenna layer; a circle of first metal through holes is provided around the second cylindrical cavity; The fifth antenna layer is provided with a circle of second metal through holes; the second metal through holes correspond one-to-one with the first metal through holes; The projections of the centers of the first circular area, the first cylindrical cavity, the second circular area, the third circular area, the circular metal patch and the second cylindrical cavity in the target direction coincide with each other; the target direction is a direction perpendicular to each antenna layer.

2. The highly selective filtering dielectric resonator antenna according to claim 1, wherein: The diameter of the second cylindrical cavity is greater than the diameter of the first cylindrical cavity.

3. The highly selective filtering dielectric resonator antenna according to claim 1, wherein: The first antenna layer and the second antenna layer are provided with rectangular notches, and the positions of the rectangular notches correspond to the positions of the feeder lines of the antenna.

4. The highly selective filtering dielectric resonator antenna according to claim 1, wherein: The first antenna layer, the second antenna layer, the third antenna layer, the fourth antenna layer, and the fifth antenna layer are combined together by rivets.

5. The highly selective filtering dielectric resonator antenna according to claim 1, wherein: The feeding microstrip comprises a feeding plate and a first rectangular microstrip; one end of the feeding plate is connected to the circular metal patch through the plurality of feeding branches; the other end of the feeding plate is connected to the first rectangular microstrip; A second rectangular area is further provided on a side of the third antenna layer adjacent to the second antenna layer; one end of the second rectangular area is connected to the first rectangular area, and the other end extends to the edge of the third antenna layer; the metal layer within the second rectangular area is removed; a second rectangular microstrip is provided within the second rectangular area; one end of the second rectangular microstrip is connected to the first rectangular microstrip, and the other end of the second rectangular microstrip extends to the edge of the third antenna layer, externally connected to the antenna feed line; The width of the second rectangular microstrip is smaller than the width of the first rectangular microstrip.

6. The highly selective filtering dielectric resonator antenna according to claim 5, characterized in that: The multiple feed branches include a first feed branch, a second feed branch and a third feed branch arranged in parallel; the second feed branch, the first rectangular microstrip and the second rectangular microstrip are located on the same straight line; the first feed branch and the third feed branch are respectively located on both sides of the straight line; the straight line is a symmetry axis of the feed sheet.

7. The highly selective filtering dielectric resonator antenna according to claim 5, characterized in that: The length of the feed plate is 2.7 mm, and the width of the feed plate is 2.9 mm; the length of the first rectangular microstrip is 4.8 mm, and the width of the first rectangular microstrip is 1.9 mm; the length of the second rectangular microstrip is 6 mm, and the width of the second rectangular microstrip is 0.5 mm.

8. The highly selective filtering dielectric resonator antenna according to claim 1, wherein: The diameter of the cylindrical dielectric resonator is smaller than the inner diameter of the annular dielectric resonator.

9. The highly selective filtering dielectric resonator antenna according to claim 1, wherein: The diameter of the first cylindrical cavity is 12 mm; the inner diameter of the annular dielectric resonator is 5 mm, the outer diameter of the annular dielectric resonator is 10 mm; and the height of the annular dielectric resonator is 2 mm. The diameter of the cylindrical dielectric resonator is 4 mm; the height of the cylindrical dielectric resonator is 2 mm.

10. The highly selective filtering dielectric resonator antenna according to claim 1, wherein: The thickness of the dielectric substrate in the first antenna layer is 0.6 mm; the thickness of the dielectric substrate in the second antenna layer is 2.1 mm; the thickness of the dielectric substrate in the third antenna layer is 0.4 mm; and the thickness of the dielectric substrate in the fourth antenna layer is 2 mm. The thickness of the dielectric substrate in the fifth antenna layer is 0.6 mm.

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