Light source mask collaborative optimization method and system, mask, equipment and storage medium

Abstract

A light source mask collaborative optimization method and system, mask, device, and storage medium. The method includes: providing an original light source; obtaining multiple design patterns, arranged in parallel; selecting a design pattern with poor light source performance from the multiple design patterns as a target pattern; obtaining multiple auxiliary patterns with the same line width as the target pattern, with the auxiliary patterns arranged in the same direction as the design pattern, and the pitch difference between the auxiliary patterns is smaller than the pitch difference between the target pattern; and optimizing the light source based on the design patterns and the auxiliary patterns to obtain the target light source. The present invention is beneficial for improving the optimization effect of the overall design pattern light source mask collaborative optimization.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a light source and mask collaborative optimization method and system, a mask, a device, and a storage medium. Background Art

[0002] Currently, photolithography processes are beginning to incorporate source-mask collaborative optimization (SMO). The existing SMO calculation principle is to assign different weights to different graphics and find the optimal solution for the light source by minimizing a penalty function.

[0003] As manufacturing processes become increasingly complex, SADP and SAQP processes generate a large number of patterns with non-uniform pitch. The existing SMO calculation process only optimizes the overall pitch of a pattern with weak points by increasing the weight of the entire pattern. It cannot effectively adjust the weakest line, space, or edge individually. In extreme cases, convergence may not be achieved. Summary of the Invention

[0004] The problem solved by the embodiments of the present invention is to provide a light source and mask collaborative optimization method and system, mask, device and storage medium, which improve the optical proximity correction effect while saving process costs.

[0005] To solve the above problems, an embodiment of the present invention provides a light source mask collaborative optimization method, including: providing an original light source; obtaining multiple design graphics, and arranging the design graphics in parallel; selecting a design graphic with poor light source performance from the multiple design graphics as a target graphic; obtaining multiple auxiliary graphics with the same line width as the target graphic, the arrangement direction of the auxiliary graphics is the same as the arrangement direction of the design graphics, and the difference in pitch on both sides of the auxiliary graphics is smaller than the difference in pitch on both sides of the target graphic; optimizing the light source based on the design graphics and the auxiliary graphics to obtain the target light source.

[0006] Accordingly, an embodiment of the present invention also provides an optical proximity correction system, including: an original light source providing module, used to provide an original light source; a design graphic acquisition module, used to acquire multiple design graphics, the design graphics are arranged in parallel; a target graphic acquisition module, used to select a design graphic with poor light source performance from the multiple design graphics as a target graphic; an auxiliary graphic acquisition module, used to acquire multiple auxiliary graphics with the same line width as the target graphic, the arrangement direction of the auxiliary graphics is the same as the arrangement direction of the design graphics, and the difference in pitch on both sides of the auxiliary graphics is smaller than the difference in pitch on both sides of the target graphic; a target light source acquisition module, used to optimize the light source based on the design graphics and the auxiliary graphics to obtain the target light source.

[0007] Correspondingly, an embodiment of the present invention further provides a mask, including a pattern obtained using the light source mask collaborative optimization method provided by an embodiment of the present invention.

[0008] Accordingly, an embodiment of the present invention also provides a device comprising at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the light source mask collaborative optimization method provided in an embodiment of the present invention.

[0009] Correspondingly, an embodiment of the present invention further provides a storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the light source mask collaborative optimization method provided by the embodiment of the present invention.

[0010] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0011] In the light source mask collaborative optimization method provided by an embodiment of the present invention, an original light source is provided, a plurality of design graphics are obtained, the design graphics are arranged in parallel, and from the plurality of design graphics, a design graphic with poor light source performance is selected as a target graphic, and a plurality of auxiliary graphics with the same line width as the target graphic are obtained, the arrangement direction of the auxiliary graphics is the same as the arrangement direction of the design graphics, and the pitch difference on both sides of the auxiliary graphics is smaller than the pitch difference on both sides of the target graphic. The light source is optimized based on the design graphics and the auxiliary graphics to obtain the target light source; in the embodiment of the present invention, the line width of the auxiliary graphics is the same as that of the target graphics, and the pitch difference on both sides of the auxiliary graphics is smaller than the pitch difference on both sides of the target graphics, then the auxiliary graphics can obtain better light source performance, so that the auxiliary graphics can specifically improve the light source performance of the target graphics in the design graphics, thereby facilitating effective individual light source optimization and adjustment for the graphics in the design graphics, obtaining a better target light source, and thereby improving the optimization effect of the overall design graphic light source mask collaborative optimization. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a flow chart of an embodiment of a light source mask collaborative optimization method of the present invention;

[0013] Figures 2 to 7 1 is a schematic diagram corresponding to each step in an embodiment of a light source and mask collaborative optimization method of the present invention;

[0014] Figure 8 is a functional block diagram of an embodiment of an optical proximity correction system of the present invention;

[0015] Figure 9 It is a hardware structure diagram of an embodiment of the device provided by the present invention. DETAILED DESCRIPTION

[0016] As we can see from the background, the light source optimization process in existing SMO software is as follows: starting with the initial light source, unrestricted continuous light source / mask optimization is performed for the input test pattern. After finding the initial optimal solution, further optimization is performed based on the light source and mask restrictions. The final optimized output is obtained.

[0017] Since the initial optimization of the light source is based on the pitch of the pattern (the pitch of the entire cell window) rather than the line width (CD), non-uniform patterns are very likely to exist at advanced nodes. The pitch of the entire cell window may not effectively reflect the information of weak points, which can easily lead to the optimized light source performance not meeting the requirements and being significantly different from the optimal light source required for the pattern of that lithography level.

[0018] Under certain extreme conditions, due to the use of the original algorithm, the performance at the weak point can never meet the set standards, and SMO may even fail to converge, resulting in optimization failure.

[0019] In order to solve the above technical problems, an embodiment of the present invention provides a light source mask collaborative optimization method. Figure 4 , shows a flow chart of an embodiment of the light source mask collaborative optimization method of the present invention.

[0020] In this embodiment, the light source mask collaborative optimization method includes the following basic steps:

[0021] Step S1: providing an original light source;

[0022] Step S2: Acquire multiple design graphics, and arrange the design graphics in parallel;

[0023] Step S3: Selecting a design pattern with poor light source performance from multiple design patterns as a target pattern;

[0024] Step S4: obtaining a plurality of auxiliary patterns having the same line width as the target pattern, wherein the arrangement direction of the auxiliary patterns is the same as that of the design pattern, and the difference in pitch between the two sides of the auxiliary patterns is smaller than the difference in pitch between the two sides of the target pattern;

[0025] Step S5: Optimize the light source based on the design pattern and the auxiliary pattern to obtain the target light source.

[0026] In an embodiment of the present invention, the line width of the auxiliary graphics is the same as that of the target graphics, and the difference in pitch on both sides of the auxiliary graphics is smaller than the difference in pitch on both sides of the target graphics. In this way, the auxiliary graphics can obtain better light source performance, so that the auxiliary graphics can specifically improve the light source performance of the target graphics in the design graphics, thereby facilitating effective individual light source optimization and adjustment for the graphics in the design graphics, obtaining a better target light source, and thereby improving the optimization effect of the collaborative optimization of the light source mask of the overall design graphics.

[0027] In order to make the above-mentioned objects, features and advantages of the embodiments of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0028] Figures 2 to 7 1 is a schematic diagram corresponding to each step in an embodiment of the light source mask collaborative optimization method of the present invention.

[0029] refer to Figure 2 , execute step S1: provide an original light source 200.

[0030] The original light source 200 is used as a basis for subsequent light source optimization.

[0031] In this embodiment, the original light source 200 includes a plurality of pixels.

[0032] In this embodiment, the original light source 200 is a light source with uniform light intensity, that is, the original light source 200 includes a plurality of pixels, and the light intensity and position of each pixel are uniformly distributed.

[0033] refer to Figure 3 , executing step S2: obtaining a plurality of design graphics 100, wherein the design graphics 100 are arranged in parallel.

[0034] Design pattern 100 is the pattern subsequently transferred to the wafer. Design pattern 100 is also used for light source optimization. After performing light source and mask collaborative optimization, a target light source is obtained. This target light source is used to create a mask from design pattern 100, which is then used in a photolithography process to form the corresponding mask pattern on the wafer.

[0035] Combined with reference Figure 4 and Figure 5 , executing step S3: selecting a design graphic 100 with poor light source performance from the multiple design graphics 100 as a target graphic 110.

[0036] The target pattern 110 is a pattern that needs to be optimized in a targeted manner during the light source mask collaborative optimization. The targeted optimization is subsequently performed by acquiring auxiliary patterns, so that the target pattern 110 is also used as a basis for subsequently acquiring auxiliary patterns.

[0037] It should be noted that, in this embodiment, the design pattern 100 with poor light source performance is selected, that is, the design pattern 100 with a weak point.

[0038] In this embodiment, auxiliary graphics are subsequently obtained based on the target graphic 110, and the design graphic 100 with poor light source performance is selected from multiple design graphics 100 as the target graphic 110. After screening, it is beneficial to obtain the corresponding auxiliary graphics in a targeted manner, reduce computing power, and improve the efficiency of light source mask collaborative optimization.

[0039] refer to Figure 4 In this embodiment, the step of selecting a design graphic 100 with poor light source performance from a plurality of designed graphics 100 as a target graphic 110 includes: optimizing the original light source 200 based on the pitch of adjacent design graphics 100 to obtain an initial light source 210.

[0040] The initial light source 210 is used as a basis for subsequent optimization to obtain a target light source. The initial light source 210 is also used to screen multiple design graphics 100 to obtain a design graphic 100 with poor light source performance as a target graphic 110 .

[0041] It should be noted that, in this embodiment, the pitch refers to the sum of the line width (CD) of a design pattern 100 and the space between adjacent design patterns 100 .

[0042] In this embodiment, the original light source 200 is optimized based on the pitch of adjacent design patterns 100. In the step of obtaining the initial light source 210, the light intensity and position of each pixel of the original light source 200 are first optimized based on the pitch of adjacent design patterns 100.

[0043] In the original light source 200, different pixel points correspond to different pitches at different positions. Based on the pitch of adjacent design graphics 100, the light intensity and position required for the pixel points corresponding to the pitch in subsequent exposure are obtained, so that the initial light source 210 obtained after the first optimization can have better exposure parameters for each design graphic 100.

[0044] refer to Figure 5 In this embodiment, the design pattern 100 whose light source expression on the initial light source 210 conflicts with the initial light source 210 is selected as the target pattern 110 .

[0045] It should be noted that the design pattern 100 whose light source performance on the initial light source 210 conflicts with the initial light source 210 means that the light source performance on the initial light source 210 required for subsequent exposure of the design pattern 100 is inconsistent with the actual light source performance on the initial light source 210.

[0046] If the light source performance of the design graphic 100 on the initial light source 210 conflicts with the initial light source 210, the pixel points on the initial light source 210 of the design graphic 100 need to be further optimized. Therefore, the design graphic 100 is selected as the target graphic 110, and an auxiliary graphic is subsequently obtained based on the target graphic 110 for further optimization of the initial light source 210.

[0047] In this embodiment, the step of selecting the design graphic 100 whose light source performance on the initial light source 210 conflicts with the initial light source 210 as the target graphic 110 includes: in the design graphic 100, based on the algorithm, performing optical simulation calculation according to the initial light source, and selecting the design graphic 100 that does not reach the target exposure parameter as the target graphic 110.

[0048] When the design pattern 100 is subsequently exposed, the design pattern 100 has target exposure parameters required for exposure (for example, depth of focus (DOF), exposure energy margin (EL), and mask error factor (MEEF)). The target exposure parameters required for the exposure of the design pattern 100 conflict with (i.e., are inconsistent with) the exposure parameters of the initial light source 210 used to simulate the exposure of the design pattern 100. This indicates that the optimization of the initial light source 210 for the design pattern 100 is not reasonable and still needs further optimization. Therefore, the design pattern 100 is selected as the target pattern 110.

[0049] refer to Figure 6 , execute step S4: obtain multiple auxiliary graphics 120 with the same line width d1 as the target graphic 110, the arrangement direction of the auxiliary graphics 120 is the same as the arrangement direction of the design graphic 100, and the pitch difference between the two sides of the auxiliary graphics 120 is smaller than the pitch difference between the two sides of the target graphic 110.

[0050] The auxiliary pattern 120 is used to perform collaborative optimization of the light source mask together with the design pattern 100 to obtain a target light source.

[0051] In this embodiment, the line width of the auxiliary graphics 120 is the same as that of the target graphics 110, and the pitch difference on both sides of the auxiliary graphics 120 is smaller than the pitch difference on both sides of the target graphics 110. Therefore, the auxiliary graphics 120 can obtain better light source performance, so that the auxiliary graphics 120 can specifically improve the light source performance of the target graphics 110 in the design graphics 100, thereby facilitating effective individual light source optimization and adjustment for the graphics in the design graphics 100, obtaining a better target light source, and thereby improving the optimization effect of the collaborative optimization of the light source mask of the overall design graphics 100.

[0052] In this embodiment, in the step of obtaining a plurality of auxiliary patterns 120 having the same line width as the target pattern 110 , the pitches p between adjacent auxiliary patterns 120 are equal.

[0053] The pitches p between adjacent auxiliary patterns 120 are equal, so the environments on both sides of the auxiliary pattern 120 are the same, which is conducive to achieving better light source performance of the auxiliary pattern 120.

[0054] In this embodiment, in the step of obtaining a plurality of auxiliary patterns 120 having the same line width as the target pattern 110 , the pitch p between adjacent auxiliary patterns 120 is 1.7 to 2.3 times the line width d2 of the auxiliary pattern 120 .

[0055] The pitch p between adjacent auxiliary graphics 120 is 1.7 to 2.3 times the line width d2 of the auxiliary graphics 120, so the line width (CD) of the auxiliary graphics 120 and the spacing (space) between adjacent auxiliary graphics 120 are relatively close, and along the arrangement direction of the auxiliary graphics 120, the arrangement of the line width of the auxiliary graphics 120 and the spacing between adjacent auxiliary graphics 120 is relatively uniform, which is beneficial for making the spatial image contrast corresponding to the line width of the auxiliary graphics 120 and the spacing between adjacent auxiliary graphics 120 along the arrangement direction of the auxiliary graphics 120 relatively strong, thereby helping to make the edge placement error (EPE) corresponding to the line width of the auxiliary graphics 120 smaller, so that the light source performance of the target graphics 110 with equal line width is better.

[0056] In this embodiment, in the step of obtaining a plurality of auxiliary patterns 120 having the same line width as the target pattern 110 , the pitch between adjacent auxiliary patterns 120 is twice the line width of the auxiliary pattern 120 .

[0057] If the pitch p between adjacent auxiliary graphics 120 is twice the line width d2 of the auxiliary graphics 120, then the line width (CD) of the auxiliary graphics 120 is equal to the spacing (space) between adjacent auxiliary graphics 120. Then, along the arrangement direction of the auxiliary graphics 120, the line width of the auxiliary graphics 120 and the spacing between adjacent auxiliary graphics 120 are evenly arranged, which is beneficial for making the spatial image contrast corresponding to the line width of the auxiliary graphics 120 and the spacing between adjacent auxiliary graphics 120 along the arrangement direction of the auxiliary graphics 120 stronger, thereby helping to make the edge placement error (EPE) corresponding to the line width of the auxiliary graphics 120 smaller, so that the light source performance of the target graphics 110 with equal line width is better.

[0058] Specifically, in this embodiment, the pitch p between adjacent auxiliary graphics 120 obtained can make the spatial image contrast corresponding to the line width of the auxiliary graphics 120 and the spacing between adjacent auxiliary graphics 120 larger, which is conducive to making the edge placement error corresponding to the line width of the auxiliary graphics 120 smaller. Then, when the light source optimization is subsequently performed based on the design graphics 100 and the auxiliary graphics 120 and the target light source is obtained, the pixel points corresponding to the target graphic 110 in the target light source can be optimized in a targeted manner, so that the spatial contrast corresponding to the target graphic 110 and the environment on both sides of the target graphic 110 is improved, thereby improving the light source performance of the target graphic 110 and obtaining better exposure parameters.

[0059] refer to Figure 7 , executing step S5: performing light source optimization based on the design pattern 100 and the auxiliary pattern 120 to obtain the target light source 220.

[0060] The target light source 220 is used to subsequently expose the design pattern 100 , and to make a mask plate from the design pattern 100 , so as to perform a photolithography process using the mask plate to form a corresponding mask pattern on a wafer.

[0061] In this embodiment, in the step of optimizing the light source based on the design pattern 100 and the auxiliary pattern 120 , the initial light source 210 is optimized based on the design pattern 100 and the auxiliary pattern 120 .

[0062] The initial light source 210 has been first optimized. On this basis, the initial light source 210 is optimized to obtain the target light source 220, which is beneficial to reducing computing power and improving the efficiency of light source mask collaborative optimization.

[0063] Specifically, in this embodiment, in the step of optimizing the initial light source 210 based on the design pattern 100 and the auxiliary pattern 120 , the initial light source 210 is secondly optimized based on the pitch of adjacent design patterns 100 and the pitch of adjacent auxiliary patterns 120 .

[0064] In the initial light source 210, different pixel points correspond to different pitches at different positions. Based on the pitch of adjacent design graphics 100 and the pitch of adjacent auxiliary graphics 120, the light intensity and position required for the pixel points corresponding to the pitch in subsequent exposure are obtained, so that the target light source 220 obtained after the second optimization can have better exposure parameters for each design graphic 100.

[0065] In this embodiment, after obtaining the target light source 220 , the light source mask collaborative optimization method further includes: removing the auxiliary pattern 120 .

[0066] The auxiliary pattern 120 is removed to prepare for subsequent mask optimization.

[0067] In this embodiment, after the auxiliary pattern 120 is removed, the design pattern 100 is subjected to mask optimization.

[0068] The auxiliary pattern 120 cannot be formed on the mask when a mask is subsequently manufactured. Therefore, after removing the auxiliary pattern 120 , the design pattern 100 is masked.

[0069] Correspondingly, the present invention also provides a light source and mask collaborative optimization system. Figure 8 FIG. 4 is a functional block diagram of an optical proximity correction system according to an embodiment of the present invention.

[0070] In this embodiment, the optical proximity correction system 50 includes: an original light source providing module 501, which is used to provide an original light source; a design pattern acquisition module 502, which is used to acquire multiple design patterns, and the design patterns are arranged in parallel; a target pattern acquisition module 503, which is used to select a design pattern with poor light source performance from the multiple design patterns as a target pattern; an auxiliary pattern acquisition module 504, which is used to acquire multiple auxiliary patterns with the same line width as the target pattern, the arrangement direction of the auxiliary patterns is the same as the arrangement direction of the design patterns, and the difference in pitch between the two sides of the auxiliary patterns is smaller than the difference in pitch between the two sides of the target pattern; and a target light source acquisition module 505, which is used to optimize the light source based on the design patterns and the auxiliary patterns to obtain the target light source.

[0071] The original light source providing module 501 is used to provide an original light source.

[0072] The original light source is used as the basis for subsequent light source optimization.

[0073] In this embodiment, the original light source includes a plurality of pixels.

[0074] In this embodiment, the original light source is a light source with uniform light intensity, that is, the original light source includes a plurality of pixels, and the light intensity and position of each pixel are uniformly distributed.

[0075] The design pattern acquisition module 502 is used to acquire a plurality of design patterns, where the design patterns are arranged in parallel.

[0076] The design pattern is the pattern that will be subsequently transferred to the wafer. The design pattern is also used for light source optimization. After performing light source and mask collaborative optimization, the target light source is obtained. This target light source is used to create a mask from the design pattern. The mask is then used in the photolithography process to form the corresponding mask pattern on the wafer.

[0077] The target pattern acquisition module 503 is configured to select a design pattern with poor light source performance from a plurality of design patterns as a target pattern.

[0078] The target pattern is a pattern that needs to be optimized in a targeted manner during the light source mask collaborative optimization. The target pattern is subsequently optimized by acquiring auxiliary patterns, so that the target pattern is also used as a basis for subsequently acquiring auxiliary patterns.

[0079] It should be noted that, in this embodiment, the design pattern selected has a poor light source performance, that is, a design pattern with a weak point.

[0080] In this embodiment, auxiliary graphics are subsequently obtained based on the target image, and the design graphics with poor light source performance are selected as the target graphics from multiple design graphics. After screening, it is beneficial to obtain the corresponding auxiliary graphics in a targeted manner, reduce computing power, and improve the efficiency of light source mask collaborative optimization.

[0081] In this embodiment, the step of selecting a design pattern with poor light source performance as a target pattern from a plurality of designed patterns includes: optimizing the original light source based on a pitch of adjacent design patterns to obtain an initial light source.

[0082] The initial light source is used as the basis for subsequent optimization to obtain the target light source. The initial light source is also used to screen multiple design graphics and obtain design graphics with poor light source performance as target graphics.

[0083] It should be noted that, in this embodiment, the pitch refers to the sum of the line width (CD) of a design pattern and the spacing (space) between adjacent design patterns.

[0084] In this embodiment, the original light source is optimized based on the pitch of adjacent design patterns. In the step of obtaining the initial light source, the light intensity and position of each pixel of the original light source are first optimized based on the pitch of adjacent design patterns.

[0085] In the original light source, different pixel points correspond to different pitches at different positions. Based on the pitch of adjacent design patterns, the light intensity and position required for the pixel points corresponding to the pitch in subsequent exposure are obtained, so that the initial light source obtained after the first optimization can have better exposure parameters for each design pattern.

[0086] In this embodiment, a design pattern whose light source expression on the initial light source conflicts with the initial light source is selected as the target pattern.

[0087] It should be noted that the light source performance on the initial light source that conflicts with the design pattern on the initial light source means that the light source performance on the initial light source required for subsequent exposure of the design pattern is inconsistent with the actual light source performance on the initial light source.

[0088] If the light source performance of the design graphic on the initial light source conflicts with the initial light source, the pixel points on the initial light source of the design graphic need to be further optimized. Therefore, the design graphic is selected as the target graphic, and the auxiliary graphic is subsequently obtained based on the target graphic to further optimize the initial light source.

[0089] In this embodiment, selecting a design pattern whose light source performance on the initial light source conflicts with the initial light source as the target pattern includes: performing optical simulation calculation based on the algorithm according to the initial light source in the design pattern, and selecting a design pattern that does not reach the target exposure parameter as the target pattern.

[0090] When the design pattern is subsequently exposed, the design pattern has target exposure parameters required for exposure (for example, depth of focus (DOF), exposure energy margin (EL), and mask error factor (MEEF)). The target exposure parameters required for the design pattern exposure conflict with (i.e., are inconsistent with) the exposure parameters of the initial light source used to simulate the exposure of the design pattern. This indicates that the optimization of the initial light source for the design pattern is not reasonable and still needs further optimization. Therefore, the design pattern is selected as the target pattern.

[0091] The auxiliary pattern acquisition module 504 is used to acquire multiple auxiliary patterns with the same line width d1 as the target pattern. The arrangement direction of the auxiliary patterns is the same as that of the design pattern, and the pitch difference between the two sides of the auxiliary patterns is smaller than the pitch difference between the two sides of the target pattern.

[0092] Auxiliary graphics are used to perform collaborative optimization of light source masks together with design graphics to obtain the target light source.

[0093] In this embodiment, the line width of the auxiliary graphics is the same as that of the target graphics, and the pitch difference on both sides of the auxiliary graphics is smaller than the pitch difference on both sides of the target graphics. In this way, the auxiliary graphics can obtain better light source performance, so that the auxiliary graphics can specifically improve the light source performance of the target graphics in the design graphics, thereby facilitating effective individual light source optimization and adjustment for the graphics in the design graphics, obtaining a better target light source, and thereby improving the optimization effect of the collaborative optimization of the light source mask of the overall design graphics.

[0094] In this embodiment, in the step of obtaining a plurality of auxiliary patterns having the same line width as the target pattern, the pitches p between adjacent auxiliary patterns are equal.

[0095] If the pitches p between adjacent auxiliary patterns are equal, the environments on both sides of the auxiliary patterns are the same, which is conducive to obtaining better light source performance for the auxiliary patterns.

[0096] In this embodiment, in the step of obtaining a plurality of auxiliary patterns having the same line width as the target pattern, the pitch p between adjacent auxiliary patterns is 1.7 to 2.3 times the line width d2 of the auxiliary pattern.

[0097] The pitch p between adjacent auxiliary graphics is 1.7 to 2.3 times the line width d2 of the auxiliary graphics, so the line width (CD) of the auxiliary graphics is closer to the spacing (space) between adjacent auxiliary graphics. Then, along the arrangement direction of the auxiliary graphics, the line width of the auxiliary graphics and the spacing between adjacent auxiliary graphics are arranged more evenly, which is beneficial to making the spatial image contrast corresponding to the line width of the auxiliary graphics and the spacing between adjacent auxiliary graphics along the arrangement direction of the auxiliary graphics stronger, thereby helping to make the edge placement error (EPE) corresponding to the line width of the auxiliary graphics smaller, so that the light source performance of the target graphics with equal line width is better.

[0098] In this embodiment, in the step of acquiring a plurality of auxiliary patterns having the same line width as the target pattern, the pitch between adjacent auxiliary patterns is twice the line width of the auxiliary pattern.

[0099] If the pitch p between adjacent auxiliary graphics is twice the line width d2 of the auxiliary graphics, then the line width (CD) of the auxiliary graphics is equal to the spacing (space) between adjacent auxiliary graphics. Then, along the arrangement direction of the auxiliary graphics, the line width of the auxiliary graphics and the spacing between adjacent auxiliary graphics are evenly arranged, which is beneficial to making the spatial image contrast corresponding to the line width of the auxiliary graphics and the spacing between adjacent auxiliary graphics along the arrangement direction of the auxiliary graphics stronger, thereby helping to make the edge placement error (EPE) corresponding to the line width of the auxiliary graphics smaller, so that the light source performance of the target graphics with equal line width is better.

[0100] Specifically, in this embodiment, the pitch p between adjacent auxiliary graphics obtained can make the spatial image contrast corresponding to the line width of the auxiliary graphics and the spacing between adjacent auxiliary graphics larger, which is conducive to making the edge placement error corresponding to the line width of the auxiliary graphics smaller. Subsequently, when the light source optimization is performed based on the design graphics and the auxiliary graphics and the target light source is obtained, the pixel points corresponding to the target graphics in the target light source can be optimized in a targeted manner, so that the spatial contrast corresponding to the target graphics and the environment on both sides of the target graphics is improved, thereby improving the light source performance of the target graphics and obtaining better exposure parameters.

[0101] The target light source acquisition module 505 is used to optimize the light source based on the design pattern and the auxiliary pattern to obtain the target light source.

[0102] The target light source is used to subsequently expose the design pattern, make a mask plate with the design pattern, and then use the mask plate to perform a photolithography process to form a corresponding mask pattern on the wafer.

[0103] In this embodiment, in the step of optimizing the light source based on the design pattern and the auxiliary pattern, the initial light source is optimized based on the design pattern and the auxiliary pattern.

[0104] The initial light source has been optimized for the first time. On this basis, the initial light source is optimized to obtain the target light source, which is conducive to reducing computing power and improving the efficiency of light source mask collaborative optimization.

[0105] Specifically, in this embodiment, in the step of optimizing the initial light source based on the design patterns and the auxiliary patterns, the initial light source is secondly optimized based on the pitch of adjacent design patterns and the pitch of adjacent auxiliary patterns.

[0106] In the initial light source, different pixel points correspond to different pitches at different positions. Based on the pitch of adjacent design graphics and the pitch of adjacent auxiliary graphics, the light intensity and position required for the pixel points corresponding to the pitch in subsequent exposure are obtained, so that the target light source obtained after the second optimization can have better exposure parameters for each design graphic.

[0107] In this embodiment, after obtaining the target light source, the light source mask collaborative optimization method further includes: removing the auxiliary pattern.

[0108] Remove auxiliary graphics to prepare for subsequent mask optimization.

[0109] In this embodiment, after the auxiliary pattern is removed, the design pattern is subjected to mask optimization.

[0110] The auxiliary pattern cannot be formed on the mask when the mask is subsequently made. Therefore, after removing the auxiliary pattern, the design pattern is mask-optimized.

[0111] Correspondingly, the present invention also provides a mask, comprising: a pattern obtained by using the light source mask collaborative optimization method provided by an embodiment of the present invention.

[0112] It can be seen from the foregoing embodiments that in the light source mask collaborative optimization method provided by the embodiment of the present invention, an original light source is provided, a plurality of design graphics are obtained, the design graphics are arranged in parallel, and from the multiple design graphics, a design graphic with poor light source performance is selected as a target graphic, and a plurality of auxiliary graphics with the same line width as the target graphic are obtained, the arrangement direction of the auxiliary graphics is the same as the arrangement direction of the design graphics, and the pitch difference on both sides of the auxiliary graphics is smaller than the pitch difference on both sides of the target graphic. The light source is optimized based on the design graphics and the auxiliary graphics to obtain the target light source; in the embodiment of the present invention, the line width of the auxiliary graphics is the same as that of the target graphics, and the pitch difference on both sides of the auxiliary graphics is smaller than the pitch difference on both sides of the target graphics, then the auxiliary graphics can obtain better light source performance, so that the auxiliary graphics can specifically improve the light source performance of the target graphics in the design graphics, which is conducive to effectively optimizing and adjusting the individual light sources for the graphics in the design graphics, obtaining a better target light source, and thereby improving the optimization effect of the collaborative optimization of the overall design graphics light source mask.

[0113] The embodiment of the present invention further provides a device that can implement the light source mask collaborative optimization method provided by the embodiment of the present invention by loading the above light source mask collaborative optimization method in the form of a program. An optional hardware structure of the terminal device provided by the embodiment of the present invention can be as follows Figure 9 As shown, it includes: at least one processor 01, at least one communication interface 02, at least one memory 03 and at least one communication bus 04.

[0114] In this embodiment, the number of processor 01, communication interface 02, memory 03, and communication bus 04 is at least one, and the processor 01, communication interface 02, and memory 03 communicate with each other through the communication bus 04. The communication interface 02 can be an interface of a communication module for network communication, such as an interface of a GSM module. The processor 01 may be a central processing unit CPU, or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement an embodiment of the present invention. The memory 03 may include a high-speed RAM memory, and may also include a non-volatile memory (NVM), such as at least one disk storage. The memory 03 stores one or more computer instructions, and the one or more computer instructions are executed by the processor 01 to implement the light source mask collaborative optimization method provided in an embodiment of the present invention.

[0115] It should be noted that the above-mentioned terminal device may also include other devices (not shown) that may not be necessary for understanding the contents disclosed in the embodiments of the present invention; given that these other devices may not be necessary for understanding the contents disclosed in the embodiments of the present invention, the embodiments of the present invention will not introduce them one by one.

[0116] An embodiment of the present invention further provides a storage medium storing one or more computer instructions, wherein the one or more computer instructions are used to implement the light source mask collaborative optimization method provided in the embodiment of the present invention.

[0117] In the light source mask collaborative optimization method provided by an embodiment of the present invention, an original light source is provided, a plurality of design graphics are obtained, the design graphics are arranged in parallel, and from the plurality of design graphics, a design graphic with poor light source performance is selected as a target graphic, and a plurality of auxiliary graphics with the same line width as the target graphic are obtained, the arrangement direction of the auxiliary graphics is the same as the arrangement direction of the design graphics, and the pitch difference on both sides of the auxiliary graphics is smaller than the pitch difference on both sides of the target graphic. The light source is optimized based on the design graphics and the auxiliary graphics to obtain the target light source; in the embodiment of the present invention, the line width of the auxiliary graphics is the same as that of the target graphics, and the pitch difference on both sides of the auxiliary graphics is smaller than the pitch difference on both sides of the target graphics, then the auxiliary graphics can obtain better light source performance, so that the auxiliary graphics can specifically improve the light source performance of the target graphics in the design graphics, thereby facilitating effective individual light source optimization and adjustment for the graphics in the design graphics, obtaining a better target light source, and thereby improving the optimization effect of the overall design graphic light source mask collaborative optimization.

[0118] The embodiments of the present invention described above are combinations of elements and features of the present invention. Unless otherwise mentioned, the elements or features may be considered as optional. Each element or feature may be put into practice without being combined with other elements or features. In addition, the embodiments of the present invention may be constructed by combining some elements and / or features. The order of operations described in the embodiments of the present invention may be rearranged. Some configurations of any one embodiment may be included in another embodiment and may be replaced by the corresponding configuration of another embodiment. It is obvious to those skilled in the art that claims that do not have a clear reference relationship to each other in the appended claims may be combined into embodiments of the present invention, or may be included as new claims in amendments after submitting this application.

[0119] The embodiments of the present invention can be implemented by various means such as hardware, firmware, software or a combination thereof. In a hardware configuration, the method according to the exemplary embodiment of the present invention can be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc. In a firmware or software configuration, the embodiments of the present invention can be implemented in the form of modules, processes, functions, etc. The software code can be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and can send data to the processor and receive data from the processor via various known means.

[0120] The above description of the disclosed embodiments will enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein, but is to be construed in the widest possible manner consistent with the principles and novel features disclosed herein.

[0121] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A light source mask collaborative optimization method, characterized in that: include: Provides original light source; Acquire a plurality of design graphics, wherein the design graphics are arranged in parallel; From the plurality of design patterns, selecting the design pattern with poor light source performance as the target pattern; Acquire a plurality of auxiliary patterns having the same line width as the target pattern, wherein the arrangement direction of the auxiliary patterns is the same as the arrangement direction of the design pattern, and the difference in pitch between two sides of the auxiliary patterns is smaller than the difference in pitch between two sides of the target pattern; Light source optimization is performed based on the design pattern and the auxiliary pattern to obtain a target light source.

2. The light source mask collaborative optimization method according to claim 1, wherein: In the step of obtaining a plurality of auxiliary patterns having the same line width as the target pattern, pitches between adjacent auxiliary patterns are equal.

3. The light source mask collaborative optimization method according to claim 1 or 2, characterized in that: In the step of obtaining a plurality of auxiliary patterns having a line width equal to that of the target pattern, a pitch between adjacent auxiliary patterns is 1.7 to 2.3 times the line width of the auxiliary pattern.

4. The light source mask collaborative optimization method according to claim 3, wherein: In the step of obtaining a plurality of auxiliary patterns having a line width equal to that of the target pattern, a pitch between adjacent auxiliary patterns is twice the line width of the auxiliary pattern.

5. The light source mask collaborative optimization method according to claim 1, wherein: The step of selecting the design pattern with poor light source performance from the plurality of design patterns as the target pattern comprises: optimizing the original light source based on the pitch of adjacent design patterns to obtain an initial light source; selecting a design pattern whose light source expression on the initial light source conflicts with the initial light source as the target pattern; In the step of optimizing the light source based on the design pattern and the auxiliary pattern, the initial light source is optimized based on the design pattern and the auxiliary pattern.

6. The light source mask collaborative optimization method according to claim 5, wherein: In the step of providing the original light source, the original light source includes a plurality of pixel points; The original light source is optimized based on the pitch of the adjacent design patterns, and in the step of obtaining the initial light source, the light intensity and position of each pixel of the original light source are first optimized based on the pitch of the adjacent design patterns; The step of selecting a design pattern whose light source performance on the initial light source conflicts with the initial light source as the target pattern comprises: performing optical simulation calculations according to the initial light source based on an algorithm in the design pattern, and selecting a design pattern that does not reach a target exposure parameter as the target pattern; In the step of optimizing the initial light source based on the design pattern and the auxiliary pattern, the initial light source is secondly optimized based on a pitch between adjacent design patterns and a pitch between adjacent auxiliary patterns.

7. The light source mask collaborative optimization method according to claim 1, wherein: After obtaining the target light source, the light source mask collaborative optimization method further includes: removing the auxiliary pattern; After removing the auxiliary pattern, the mask optimization is performed on the design pattern.

8. A light source mask collaborative optimization system, characterized in that: include: The original light source providing module is used to provide the original light source; A design pattern acquisition module, configured to acquire a plurality of design patterns, wherein the design patterns are arranged in parallel; a target pattern acquisition module, configured to select, from the plurality of design patterns, the design pattern with poor light source performance as the target pattern; an auxiliary pattern acquisition module, configured to acquire a plurality of auxiliary patterns having the same line width as the target pattern, wherein the arrangement direction of the auxiliary patterns is the same as that of the design pattern, and the difference in pitch between the two sides of the auxiliary patterns is smaller than the difference in pitch between the two sides of the target pattern; The target light source acquisition module is used to optimize the light source based on the design pattern and the auxiliary pattern to obtain the target light source.

9. The light source mask collaborative optimization system according to claim 8, wherein: In the auxiliary pattern acquisition module, the pitches between adjacent auxiliary patterns are equal.

10. The light source mask collaborative optimization system according to claim 8 or 9, characterized in that: In the auxiliary pattern acquisition module, a pitch between adjacent auxiliary patterns is 1.7 to 2.3 times the line width of the auxiliary patterns.

11. The light source mask collaborative optimization system according to claim 10, wherein: In the auxiliary pattern acquisition module, a pitch between adjacent auxiliary patterns is twice the line width of the auxiliary patterns.

12. A mask, characterized in that: include: A pattern obtained using the light source mask collaborative optimization method according to any one of claims 1 to 7.

13. A device, characterized in that The method comprises at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the light source mask collaborative optimization method according to any one of claims 1 to 7.

14. A storage medium, characterized in that The storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the light source mask collaborative optimization method according to any one of claims 1 to 7.

Images