Preparation method of infrared photodetector and infrared photodetector

Abstract

The application provides a preparation method of an infrared photodetector and the infrared photodetector, and comprises the following steps: forming a metal layer by sputtering a metal target material on a substrate layer through a magnetron sputtering method, wherein the metal target material comprises a main body material and a doping element, the main body material comprises vanadium, and the doping element comprises a bismuth element, a magnesium element and a lithium element; performing oxidation treatment on the metal layer, so that the vanadium is oxidized into vanadium oxide to form a thermosensitive semiconductor layer; performing annealing treatment on the thermosensitive semiconductor layer, so as to activate p-type doping of the magnesium element and the lithium element in the vanadium oxide, and make the thermosensitive semiconductor layer precipitate bismuth quantum dots composed of the bismuth element on a surface of a side of the thermosensitive semiconductor layer away from the substrate layer; and setting a first electrode layer on a side of the substrate layer away from the thermosensitive semiconductor layer, and setting a second electrode layer on a side of the thermosensitive semiconductor layer away from the substrate layer, to obtain the infrared photodetector. According to the scheme provided in the application, the photoelectric efficiency of the infrared photodetector can be improved.

Description

Technical Field

[0001] The present application relates to, but is not limited to, the field of photoelectric detector technology, and in particular to a method for preparing an infrared photoelectric detector and an infrared photoelectric detector. Background Art

[0002] An infrared photodetector is a device that converts infrared thermal radiation into electrical signals. The infrared thermal radiation from the target is focused onto the plane of the infrared photodetector. The temperature of the infrared photodetector changes after absorbing infrared energy. The infrared photodetector receives thermal radiation of different energies, and its own temperature changes differently, causing the resistance value of the thermistor layer to change accordingly. This change is converted into an electrical signal output by the readout circuit inside the infrared photodetector. After the signal acquisition and data processing circuit outside the detector, a visual electronic image reflecting the target temperature distribution is finally obtained.

[0003] Photoelectric efficiency refers to the ratio of the electrical signal power converted from photoelectricity to the infrared light power. In practical applications, the efficiency of infrared photodetectors is often one of the key factors in optimizing their design.

[0004] Most existing infrared photodetectors use single vanadium oxide and amorphous silicon as the main materials of the thermal sensitive layer. The photoelectric efficiency of the infrared photodetector is limited by the physical properties of vanadium oxide and amorphous silicon. Summary of the Invention

[0005] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0006] The embodiments of the present application provide a method for preparing an infrared photoelectric detector and an infrared photoelectric detector, which can enhance the photoelectric performance of the infrared photoelectric detector.

[0007] To achieve the above-mentioned objectives, the first aspect of the present invention provides a method for preparing an infrared photodetector, comprising: sputtering a metal target material onto a substrate layer by a magnetron sputtering method to form a metal layer, wherein the metal target material includes a main material and a doping element, the main material includes metal vanadium, and the doping element includes bismuth, magnesium and lithium; oxidizing the metal layer to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer; annealing the thermosensitive semiconductor layer to activate p-type doping of magnesium and lithium in the vanadium oxide, and precipitating bismuth quantum dots composed of the bismuth element on the surface of the thermosensitive semiconductor layer away from the substrate layer; arranging a first electrode layer on the side of the substrate layer away from the thermosensitive semiconductor layer, and arranging a second electrode layer on the side of the thermosensitive semiconductor layer away from the substrate layer, to obtain an infrared photodetector.

[0008] In one embodiment, the oxidation treatment of the metal layer to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer includes: masking and protecting the substrate layer; immersing the metal layer in an oxalic acid solution, and performing an anodizing treatment on the metal layer to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer.

[0009] In one embodiment, the concentration of the oxalic acid solution is 0.1 mol / L to 0.8 mol / L.

[0010] In one embodiment, the metal target is sputtered onto the substrate layer by a magnetron sputtering method to form a metal layer, including: fixing the metal target and the substrate layer in a vacuum chamber, wherein the vacuum chamber is placed in a magnetic field; connecting the metal target to the negative pole of a power supply, grounding the substrate layer, and continuously injecting argon gas into the vacuum chamber and continuously discharging it, so that the vanadium atoms, bismuth atoms, magnesium atoms and lithium atoms on the metal target are sputtered onto the substrate layer to form a metal layer.

[0011] In one embodiment, the gas pressure in the vacuum chamber is 0.1 Pa.

[0012] In one embodiment, the power of the power supply is 80W.

[0013] In one embodiment, the temperature in the vacuum chamber is 500 to 900 degrees Celsius.

[0014] In one embodiment, the annealing process is performed at a temperature of 500 to 800 degrees Celsius.

[0015] In one embodiment, the diameter of the bismuth quantum dots is 1 to 10 nanometers.

[0016] To achieve the above-mentioned object, the second aspect of the present invention provides an infrared photoelectric detector, characterized in that the infrared photoelectric detector is manufactured by the preparation method described in the first aspect.

[0017] The present application proposes a method for preparing an infrared photodetector and an infrared photodetector. The method for preparing an infrared photodetector in an embodiment of the present application includes: sputtering a metal target material onto a substrate layer by a magnetron sputtering method to form a metal layer, wherein the metal target material includes a main material and a doping element, the main material includes metal vanadium, and the doping element includes bismuth, magnesium, and lithium; oxidizing the metal layer to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer; annealing the thermosensitive semiconductor layer to activate p-type doping of magnesium and lithium in the vanadium oxide, and precipitating bismuth quantum dots composed of bismuth on the surface of the metal layer away from the substrate layer; setting a first electrode layer on the side of the substrate layer away from the thermosensitive semiconductor layer, and setting a second electrode layer on the side of the thermosensitive semiconductor layer away from the substrate layer to obtain an infrared photodetector. According to the solution provided in the embodiments of the present application, a metal target is sputtered onto a substrate layer by magnetron sputtering, so that the metal vanadium, metal bismuth, metal magnesium, and metal lithium in the metal target are evenly distributed on the surface of the substrate layer, thereby forming a uniform metal film on the surface of the substrate layer. After the metal vanadium is reduced to vanadium oxide, the thermosensitive semiconductor layer is annealed. Because lithium atoms have a small radius, excellent diffusivity, and relatively low activation energy, p-type activation is easily achieved under annealing conditions. At the same time, by utilizing the segregation phenomenon during the high-temperature annealing process, bismuth atoms migrate to the surface of the thermosensitive semiconductor layer, forming evenly distributed bismuth quantum dots, providing a metal plasmon enhancement effect, which not only reduces dark current but also enhances the thermosensitive semiconductor layer's absorption efficiency of infrared light, thereby enhancing the photoelectric performance of the infrared photodetector.

[0018] Other features and advantages of the present application will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present application. The purposes and other advantages of the present application can be achieved and obtained through the structures particularly pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are used to provide a further understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application and do not constitute a limitation on the technical solution of the present application.

[0020] Figure 1 An optional flow chart of the preparation method provided in the embodiments of the present application;

[0021] Figure 2 An optional flow diagram of an anodizing process provided in an embodiment of the present application;

[0022] Figure 3 An optional flow diagram of the magnetron sputtering process provided in an embodiment of the present application;

[0023] Figure 4 An optional specific flow diagram of the preparation method provided in the embodiments of the present application;

[0024] Figure 5 Another optional specific flow diagram of the preparation method provided in the embodiment of the present application;

[0025] Figure 6 This is a schematic diagram of an optional structure of the infrared photoelectric detector provided in an embodiment of the present application. DETAILED DESCRIPTION

[0026] This section will describe the specific embodiments of the present application in detail. The preferred embodiments of the present application are shown in the accompanying drawings. The purpose of the accompanying drawings is to supplement the description of the text part of the specification with graphics, so that people can intuitively and vividly understand each technical feature and overall technical solution of the present application, but it cannot be understood as a limitation on the scope of protection of the present application.

[0027] In the description of this application, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on this application.

[0028] In the description of this application, "several" means one or more, "more" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The terms "first" and "second" are used solely to distinguish technical features and are not to be construed as indicating or implying relative importance, or as implicitly specifying the number or order of the technical features indicated.

[0029] In the description of this application, unless otherwise clearly defined, terms such as setting, installation, and electrical connection should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this application based on the specific content of the technical solution.

[0030] Currently, most existing infrared photodetectors use single vanadium oxide and amorphous silicon as the main materials of the thermal sensitive layer. The photoelectric efficiency of infrared photodetectors is limited by the physical properties of vanadium oxide and amorphous silicon.

[0031] To address the problem of low photoelectric efficiency, the present application provides a method for preparing an infrared photodetector and an infrared photodetector. The method for preparing the infrared photodetector includes: sputtering a metal target onto a substrate layer by a magnetron sputtering method to form a metal layer, wherein the metal target includes a main material and a doping element, the main material includes metal vanadium, and the doping element includes bismuth, magnesium, and lithium; oxidizing the metal layer to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer; annealing the thermosensitive semiconductor layer to activate p-type doping of magnesium and lithium in the vanadium oxide, and precipitating bismuth quantum dots composed of bismuth on the surface of the thermosensitive semiconductor layer away from the substrate layer; setting a first electrode layer on the side of the substrate layer away from the thermosensitive semiconductor layer, and setting a second electrode layer on the side of the thermosensitive semiconductor layer away from the substrate layer, to obtain an infrared photodetector. According to the solution provided in the embodiments of the present application, a metal target is sputtered onto a substrate layer by magnetron sputtering, so that the metal vanadium, metal bismuth, metal magnesium, and metal lithium in the metal target are evenly distributed on the surface of the substrate layer, thereby forming a uniform metal film on the surface of the substrate layer. After the metal vanadium is reduced to vanadium oxide, the thermosensitive semiconductor layer is annealed. Because lithium atoms have a small radius, excellent diffusivity, and relatively low activation energy, p-type activation is easily achieved under annealing conditions. At the same time, by utilizing the segregation phenomenon during the high-temperature annealing process, bismuth atoms migrate to the surface of the thermosensitive semiconductor layer, forming evenly distributed bismuth quantum dots, providing a metal plasmon enhancement effect, which not only reduces dark current but also enhances the thermosensitive semiconductor layer's absorption efficiency of infrared light, thereby significantly enhancing the photoelectric performance of the infrared photodetector.

[0032] The preparation method of the infrared photoelectric detector and the infrared photoelectric detector provided in the embodiments of the present application are specifically illustrated by the following examples. First, the preparation method of the infrared photoelectric detector in the embodiments of the present application is described.

[0033] The embodiments of the present application are further described below with reference to the accompanying drawings.

[0034] Reference Figure 1 One embodiment of the present application provides a method for preparing an infrared photodetector, comprising:

[0035] Step S110, sputtering a metal target onto the substrate layer by magnetron sputtering to form a metal layer, wherein the metal target includes a main material and a doping element, the main material includes metal vanadium, and the doping element includes bismuth, magnesium, and lithium;

[0036] Step S120, performing an oxidation treatment on the metal layer to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer;

[0037] Step S130, annealing the thermosensitive semiconductor layer to activate p-type doping of magnesium and lithium in the vanadium oxide, and precipitate bismuth quantum dots composed of bismuth on the surface of the thermosensitive semiconductor layer away from the substrate layer;

[0038] Step S140 , disposing a first electrode layer on a side of the substrate layer away from the thermosensitive semiconductor layer, and disposing a second electrode layer on a side of the thermosensitive semiconductor layer away from the substrate layer, to obtain an infrared photodetector.

[0039] Based on this, a metal target is sputtered onto a substrate layer via magnetron sputtering, allowing the metal vanadium, metal bismuth, metal magnesium, and metal lithium in the metal target to be evenly distributed on the surface of the substrate layer, thereby forming a uniform metal film on the surface of the substrate layer. After reducing the metal vanadium to vanadium oxide, the thermosensitive semiconductor layer is annealed. Due to the small radius, excellent diffusivity, and relatively low activation energy of lithium atoms, p-type activation is easily achieved under annealing conditions. Simultaneously, by utilizing the segregation phenomenon during the high-temperature annealing process, bismuth atoms migrate to the surface of the thermosensitive semiconductor layer, forming evenly distributed bismuth quantum dots. This provides a metal plasmon enhancement effect, reducing dark current and enhancing the thermosensitive semiconductor layer's absorption efficiency of infrared light, thereby significantly improving the photoelectric performance of the infrared photodetector.

[0040] Specifically, the main component of the substrate layer is silicon.

[0041] In addition, refer to Figure 2 , certain embodiments of the present application, Figure 1 Step S120 in the embodiment includes:

[0042] Step S210, masking and protecting the substrate layer;

[0043] In step S220 , the metal layer is immersed in an oxalic acid solution and anodized to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer.

[0044] In a specific embodiment, the concentration of the oxalic acid solution is 0.1 mol / L to 0.8 mol / L.

[0045] It can be understood that when the metal layer is energized, a continuous, non-porous thin film layer begins to form on the metal layer. After a period of time, the voltage of the metal layer begins to decrease and the thin film layer begins to expand. Since the expansion speed at different positions is inconsistent, the thickness of the thin film layer at different positions is different, and thus the voltage at different positions is also different. Therefore, the vanadium oxide on the thin film layer at some positions begins to dissolve. As the power-on time progresses, the metal layer evolves into a heat-sensitive semiconductor layer with multiple holes.

[0046] Specifically, after anodic oxidation-reduction, metallic vanadium is oxidized to vanadium pentoxide.

[0047] It is understandable that after the oxalic acid solution undergoes an oxidation-reduction reaction, the oxalic acid molecules decompose into carbon dioxide and water. Therefore, by using the oxalic acid solution to anodize the metal layer, the pollution to the environment can be reduced, which meets the green and environmentally friendly production requirements.

[0048] In addition, refer to Figure 3 , Figure 1 Step S110 in the embodiment includes:

[0049] Step S310 , fixing the metal target and the substrate layer in a vacuum chamber, wherein the vacuum chamber is placed in a magnetic field;

[0050] In step S320 , the metal target is connected to the negative electrode of the power supply, the substrate layer is grounded, and argon gas is continuously injected into the vacuum chamber and continuously exhausted, so that the vanadium atoms, bismuth atoms, magnesium atoms, and lithium atoms on the metal target are sputtered onto the substrate layer to form a metal layer.

[0051] Specifically, the gas pressure in the vacuum chamber is 0.1 Pa, the power of the power supply is 80 W, and the temperature in the vacuum chamber is 500 to 900 degrees Celsius.

[0052] It can be understood that by sputtering the vanadium atoms, bismuth atoms, magnesium atoms and lithium atoms on the metal target material onto the substrate layer through the magnetron sputtering method, a uniformly distributed metal layer can be formed on the substrate layer.

[0053] In addition, in certain embodiments of the present application, the annealing treatment temperature is 500 to 800 degrees Celsius, and the diameter of the bismuth quantum dots is 1 to 10 nanometers.

[0054] It can be understood that when the thermosensitive semiconductor layer is heated to 500 to 800 degrees Celsius, magnesium atoms, lithium atoms and bismuth atoms diffuse in the vanadium oxide, so that the magnesium atoms, lithium atoms and bismuth atoms are evenly distributed in the vanadium oxide, thereby improving the conductivity efficiency of the thermosensitive semiconductor layer. In the process of cooling the thermosensitive semiconductor layer, under the effect of segregation, the bismuth quantum dots are absorbed from the side of the thermosensitive semiconductor layer away from the substrate layer, thereby improving the efficiency of the thermosensitive semiconductor layer in absorbing infrared light and improving the sensitivity of the infrared photodetector.

[0055] In addition, refer to Figure 4 In one embodiment of the present application, a method for preparing an infrared photoelectric detector includes:

[0056] Step S410: Flow 0.1 Pa of argon gas in a vacuum chamber, connect the substrate layer to the positive electrode of a power supply, connect the metal target to the negative electrode of the power supply, set the power output of the power supply to 80 W, and set the vacuum chamber to 900 degrees Celsius to grow a 1000-nanometer-thick metal layer on the substrate layer. The metal target includes a main material including vanadium and a dopant element including bismuth, magnesium, and lithium.

[0057] Step S420 , protecting the substrate layer with a fixture, placing the exposed metal layer in a 0.8 mol / L oxalic acid solution for an anodic oxidation reaction to form a heat-sensitive semiconductor layer;

[0058] Step S430, annealing the thermosensitive semiconductor layer at an ambient temperature of 800 degrees Celsius to activate p-type doping of magnesium and lithium in the vanadium oxide, and to precipitate bismuth quantum dots composed of bismuth on the surface of the thermosensitive semiconductor layer away from the substrate layer;

[0059] Step S440, laser etching a plurality of grooves on a side of the substrate layer away from the heat-sensitive semiconductor layer;

[0060] Step S450: Using an evaporation machine, a layer of metal gold is evaporated on the groove and the surface of the substrate layer away from the thermosensitive semiconductor layer to form a first electrode layer; and using an evaporation machine, a layer of metal gold is evaporated on the surface of the thermosensitive semiconductor layer away from the substrate layer to form a second electrode layer.

[0061] In addition, refer to Figure 5 In one embodiment of the present application, a method for preparing an infrared photoelectric detector includes:

[0062] Step S510: Flow 0.1 Pa of argon gas in a vacuum chamber, connect the substrate layer to the positive electrode of a power supply, connect the metal target to the negative electrode of the power supply, set the power output of the power supply to 80 W, and set the vacuum chamber to 500 degrees Celsius to grow a 200-nanometer-thick metal layer on the substrate layer. The metal target includes a main material including vanadium and a dopant element including bismuth, magnesium, and lithium.

[0063] Step S520 , protecting the substrate layer with a fixture, placing the exposed metal layer in a 0.4 mol / L oxalic acid solution for an anodic oxidation reaction to form a heat-sensitive semiconductor layer;

[0064] Step S530, annealing the thermosensitive semiconductor layer at an ambient temperature of 500 degrees Celsius to activate p-type doping of magnesium and lithium in the vanadium oxide, and to precipitate bismuth quantum dots composed of bismuth on the surface of the thermosensitive semiconductor layer away from the substrate layer;

[0065] Step S540, laser etching a plurality of grooves on a side of the substrate layer away from the heat-sensitive semiconductor layer;

[0066] Step S550: Using an evaporation machine, a layer of metal gold is evaporated on the groove and the surface of the substrate layer away from the thermosensitive semiconductor layer to form a first electrode layer; and using an evaporation machine, a layer of metal gold is evaporated on the surface of the thermosensitive semiconductor layer away from the substrate layer to form a second electrode layer.

[0067] It can be understood that by etching a plurality of grooves on the side of the substrate layer away from the thermosensitive semiconductor layer, and when metal gold is evaporated on the grooves and the surface of the side of the substrate layer away from the thermosensitive semiconductor layer by an evaporation machine, the first electrode layer is adhered to the surface of the substrate layer and is also embedded in the grooves, thereby reducing the distance between the first electrode layer and the thermosensitive semiconductor layer, improving the efficiency of electrical signal transmission between the thermosensitive semiconductor layer and the first electrode layer, and improving the sensitivity of the infrared photodetector.

[0068] In addition, refer to Figure 6 The present application also proposes an infrared photodetector, which includes a first electrode layer 100, a substrate layer 200, a photosensitive semiconductor layer 300 and a second electrode layer 400. The first electrode layer 100, the substrate layer 200, the photosensitive semiconductor layer 300 and the second electrode layer 400 are fixedly connected in sequence, and bismuth quantum dots 310 are provided on the side of the photosensitive semiconductor layer 300 close to the second electrode layer 300.

[0069] It can be understood that the infrared photoelectric detector is manufactured by the preparation method in the above embodiment, so the infrared photoelectric detector has similar embodiments and beneficial effects as the preparation method, which will not be described in detail here.

[0070] The embodiments described in the embodiments of this application are intended to more clearly illustrate the technical solutions of the embodiments of this application and do not constitute a limitation on the technical solutions provided by the embodiments of this application. Those skilled in the art will appreciate that with the evolution of technology and the emergence of new application scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.

[0071] It will be understood by those skilled in the art that Figures 1 to 6 The technical solutions shown in the figures do not constitute a limitation on the embodiments of the present application, and may include more or fewer steps than those shown in the figures, or a combination of certain steps, or different steps.

[0072] Those skilled in the art will appreciate that all or some of the steps in the methods, systems, and functional modules / units in the devices disclosed above may be implemented as software, firmware, hardware, or appropriate combinations thereof.

[0073] The terms "first", "second", "third", "fourth", etc. (if any) in the specification of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0074] It should be understood that in this application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the previous and next associated objects are in an "or" relationship. "At least one of the following items" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0075] The units described above as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0076] The preferred embodiments of the present invention are described above with reference to the accompanying drawings, but are not intended to limit the scope of the present invention. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and essence of the present invention should be within the scope of the present invention.

Claims

1. A method for preparing an infrared photoelectric detector, characterized in that: include: Sputtering a metal target onto the substrate layer by a magnetron sputtering method to form a metal layer, wherein the metal target comprises a main material and a doping element, the main material comprises metal vanadium, and the doping element comprises bismuth, magnesium, and lithium; performing an oxidation treatment on the metal layer to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer; Annealing the thermosensitive semiconductor layer to activate p-type doping of magnesium and lithium in the vanadium oxide, and precipitate bismuth quantum dots composed of bismuth on a surface of the thermosensitive semiconductor layer away from the substrate layer; A first electrode layer is arranged on a side of the substrate layer away from the thermosensitive semiconductor layer, and a second electrode layer is arranged on a side of the thermosensitive semiconductor layer away from the substrate layer to obtain an infrared photodetector.

2. The preparation method according to claim 1, characterized in that The step of performing oxidation treatment on the metal layer to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer comprises: masking and protecting the substrate layer; The metal layer is immersed in an oxalic acid solution and anodized to the metal layer so as to oxidize the metal vanadium into vanadium oxide to form a thermosensitive semiconductor layer.

3. The preparation method according to claim 2, characterized in that The concentration of the oxalic acid solution is 0.1 mol / L to 0.8 mol / L.

4. The preparation method according to claim 1, characterized in that The method of sputtering a metal target onto the substrate layer by a magnetron sputtering method to form a metal layer comprises: Fixing the metal target and the substrate layer in a vacuum chamber, wherein the vacuum chamber is placed in a magnetic field; The metal target is connected to the negative pole of the power supply, the substrate layer is grounded, and argon gas is continuously injected into the vacuum chamber and continuously discharged, so that the vanadium atoms, bismuth atoms, magnesium atoms and lithium atoms on the metal target are sputtered onto the substrate layer to form a metal layer.

5. The preparation method according to claim 4, characterized in that When argon gas is injected into the vacuum chamber, the gas pressure in the vacuum chamber is 0.1 Pa.

6. The preparation method according to claim 4, characterized in that The power of the power supply is 80W.

7. The preparation method according to claim 4, characterized in that The temperature in the vacuum chamber is 500 to 900 degrees Celsius.

8. The preparation method according to claim 1, characterized in that The annealing treatment is performed at a temperature of 500 to 800 degrees Celsius.

9. The preparation method according to claim 1, characterized in that The diameter of the bismuth quantum dots is 1 to 10 nanometers.

10. An infrared photoelectric detector, characterized in that: The infrared photoelectric detector is manufactured by the preparation method according to any one of claims 1 to 9.

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