Nanosecond high-voltage pulse energy emission self-test system and method

Abstract

The present invention is applicable to the field of smart medical treatment of medical devices, and provides a nanosecond-level high-voltage pulse energy emission self-test system and method. In this embodiment, the self-test system generates a nanosecond pulse through a nanosecond pulse emission circuit, and transmits the nanosecond pulse to an analog load module. The impedance value R of the analog load module is then determined by a load impedance test circuit, and the current waveform data of the nanosecond pulse is detected by a load current test circuit to determine the current I and time t of the nanosecond pulse, and finally the target energy generated by the nanosecond pulse is determined by the impedance value R, current I and time t, thereby realizing accurate detection of energy. This enables precise control at the nanosecond level during subsequent electric pulse ablation treatment. This solves the problem of not achieving the therapeutic effect due to insufficient output energy or affecting other human tissues due to excessive output energy during electric pulse ablation treatment.

Description

Technical Field

[0001] The present application relates to the field of smart medical treatment of medical devices, and in particular to a nanosecond-level high-voltage pulse energy emission self-test system and method. Background Art

[0002] Although traditional tumor treatment methods such as surgery, radiotherapy and chemotherapy are effective to a certain extent, they are often accompanied by significant side effects and recovery time. Against this background, steep pulse ablation technology has emerged. It combines modern electronic technology and medical imaging technology to generate steep pulse outputs with very short pulse width, high voltage and fast pulse rise speed, acting on tumor cells to achieve precise ablation. Steep pulse therapeutic devices currently available in China and abroad (such as AngioDynamic's NanoKnife TM System) use microsecond pulses for tumor ablation.

[0003] The principle of microsecond pulse technology is that when the microsecond pulse electric field acts on biological cells, permanent pores appear in the cell membrane, the degree of material exchange inside and outside the cell increases, the internal and external environment of the cell becomes unbalanced, and the cell dies. It is usually used in scenarios such as tumor ablation and atrial fibrillation ablation.

[0004] However, treatment with microsecond pulse technology can cause side effects such as muscle twitching, and will generate a certain amount of heat accumulation, which will have a certain impact on the target tissue of treatment. Therefore, it is necessary to accurately control the energy generated during treatment to avoid failure to achieve the treatment effect when the energy is insufficient, and causing treatment damage when the energy is too much. Summary of the invention

[0005] In view of this, the present application provides a nanosecond high-voltage pulse energy emission self-check system and method, which ensures that more accurate energy can be output to treat the lesion site by effectively comparing the energy output during microsecond pulse treatment, thereby solving the problem of insufficient output energy failing to achieve the treatment effect or excessive output energy affecting other human tissues.

[0006] In a first aspect, the present application provides a nanosecond high-voltage pulse energy emission self-test system, the system comprising an impedance value determination module, a nanosecond pulse energy generation module, a pulse current detection module, a simulated load module and a central control module;

[0007] The impedance value determination module is used to determine the impedance value R of the area to be treated through a load impedance test circuit before the nanosecond pulse energy generation module transmits nanosecond pulses to the simulated load module;

[0008] The nanosecond pulse energy generation module is used to generate a nanosecond pulse according to the pulse parameters carried in the pulse generation instruction after receiving the pulse generation instruction, and transmit the nanosecond pulse to the simulation load module through the nanosecond pulse transmission circuit;

[0009] After the nanosecond pulse energy generation module generates the nanosecond pulse, the pulse current detection module detects the current waveform data of the nanosecond pulse through the load current test circuit to determine the current I and the time t;

[0010] The simulated load module is used to receive the nanosecond pulse and determine the target energy generated by the nanosecond pulse according to the impedance value R, the current I and the time t;

[0011] The central control module is used to instruct the impedance value determination module to perform impedance testing after the pulse current detection module completes the detection;

[0012] Sending the pulse generation instruction to the nanosecond pulse energy generation module to instruct the nanosecond pulse energy generation module to emit nanosecond pulses;

[0013] The pulse current detection module is controlled to measure current waveform data of the nanosecond pulse output to the simulation load module.

[0014] Optionally, the load impedance test circuit includes a signal source module, a voltage-controlled constant current source design module and a data processing module;

[0015] The signal source module is used to generate a sine wave signal with fixed voltage and frequency and send it to the voltage-controlled constant current source design module;

[0016] The voltage-controlled constant current source design module includes an AD844 chip and several operational amplifiers, wherein the operational amplifier is used to make the residual DC component of the output voltage of the pin Uout of the AD844 chip zero; the AD844 chip sends the sine wave signal to the analog load module through the pin Iout;

[0017] The data processing module is used for receiving the sinusoidal voltage signal sent by the analog load module, converting the sinusoidal voltage signal into a first digital signal and sending the first digital signal to the central control module.

[0018] Optionally, generating a sine wave signal with a fixed voltage and frequency includes:

[0019] The signal source module is formed by an RC bridge oscillator circuit, wherein the RC bridge oscillator circuit includes a frequency selection network composed of C1 / R1 and C2 / R4 and an amplifier circuit of an operational amplifier U1;

[0020] After the fixed-frequency sine wave is generated by the frequency selection network, the sine wave is processed by the operational amplifier U1 to obtain the sine wave signal with the fixed voltage and frequency.

[0021] Optionally, the nanosecond pulse emission circuit includes an HV power supply, a current limiting module, an energy storage module, a fast switch and a trigger circuit;

[0022] The HV power supply is used to generate DC high voltage;

[0023] The current limiting module is used to limit the current generated by the DC high voltage;

[0024] The energy storage module is used to store the energy generated by the DC high voltage and modulate nanosecond pulses according to the energy;

[0025] The trigger circuit is used to control the fast switch to switch according to the switch control instruction when receiving the switch control instruction;

[0026] The fast switch is used to control the nanosecond pulse in the storage module to release quickly.

[0027] Optionally, the current waveform data of the nanosecond pulse detected by the load current test circuit includes:

[0028] The current waveform data of the nanosecond pulse is converted into a voltage signal through a current sensor, the voltage signal is differentially amplified through an operational amplifier, and the processed voltage signal is converted into a second digital signal and transmitted to the central control module.

[0029] A second aspect of the present application provides a nanosecond-level high-voltage pulse energy emission self-test method, which is applied to a control center of a self-test system, and the method comprises:

[0030] When it is determined to start the self-test, firstly, an impedance test is performed on the simulated load target through a load impedance test circuit to determine an impedance value R of the simulated load target;

[0031] After receiving the pulse generation instruction, generating a nanosecond pulse according to the pulse parameters carried in the pulse generation instruction, and transmitting the nanosecond pulse to the simulated load target;

[0032] The current waveform data generated by the nanosecond pulse is detected by a load current test circuit to determine the current I and time t of the nanosecond pulse, and the energy generated by the nanosecond pulse is determined based on the current I, time t and impedance value R.

[0033] Optionally, performing impedance testing on a simulated load target by means of a load impedance testing circuit includes:

[0034] Generate a sine wave signal with fixed voltage and frequency through a signal source, and then send the sine wave signal to the simulated load target through an AD844 chip;

[0035] After the simulated load target returns a sinusoidal voltage signal according to the sinusoidal wave signal, the sinusoidal voltage signal is converted into a first digital signal, and then the impedance value of the simulated load target is determined by the first digital signal.

[0036] Optionally, generating a nanosecond pulse using the pulse parameters carried in the pulse generation instruction and transmitting the nanosecond pulse to the simulated load target includes:

[0037] Generate a DC high voltage through an HV power supply, store energy generated by the DC high voltage and modulate nanosecond pulses according to the energy and the pulse parameters;

[0038] When the fast switch is turned on, the nanosecond pulse is transmitted to the simulated load target.

[0039] Optionally, the detecting the current waveform data generated by the nanosecond pulse by a load current testing circuit includes:

[0040] The current waveform data of the nanosecond pulse is converted into a voltage signal through a current sensor, the voltage signal is differentially amplified through an operational amplifier, and the processed voltage signal is converted into a second digital signal and transmitted to the control center, so that the control center determines the current I and time t of the nanosecond pulse according to the second digital signal.

[0041] Optionally, determining the target energy generated by the nanosecond pulse according to the impedance value R, the current I and the time t includes:

[0042] By calculating the formula A target energy is determined, where Q is the target energy generated by the nanosecond pulse.

[0043] In the embodiment provided in the present application, the self-checking system generates a nanosecond pulse through a nanosecond pulse transmitting circuit, and transmits the nanosecond pulse to a simulated load module. Then, the impedance value R of the simulated load module is determined by a load impedance test circuit, and the current waveform data of the nanosecond pulse is detected by a load current test circuit, thereby determining the current I and time t of the nanosecond pulse, and finally determining the target energy generated by the nanosecond pulse by the impedance value R, current I and time t, thereby realizing accurate detection of energy. This enables the subsequent electric pulse ablation treatment to achieve precise control of the generated ablation energy at the nanosecond level. This solves the problem of affecting other human tissues due to insufficient output energy or excessive output energy during electric pulse ablation treatment. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 A system module diagram provided for an embodiment of the present application;

[0045] Figure 2 A structural diagram of a load impedance test circuit provided in an embodiment of the present application;

[0046] Figure 3 A structural diagram of a nanosecond pulse transmission circuit provided in an embodiment of the present application;

[0047] Figure 4 Another load impedance test circuit structure diagram provided in an embodiment of the present application;

[0048] Figure 5 A structural diagram of a load current test circuit provided in an embodiment of the present application;

[0049] Figure 6 A flow chart of the method provided in the embodiment of the present application;

[0050] Figure 7 A schematic diagram of the internal structure of a computer device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0051] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0052] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The singular forms of "a", "said" and "the" used in this application and the appended claims are also intended to include plural forms unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0053] It should be understood that although the terms first, second, third, etc. may be used in the present application to describe various information, these information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0054] The present application provides a nanosecond high-voltage pulse energy emission self-checking system to achieve precise control of the pulse energy generated during ablation treatment, thereby avoiding the problem of failure to achieve treatment effects when energy is insufficient and treatment damage caused by excessive energy.

[0055] The technical solution of the present application is described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0056] like Figure 1 As shown, it is a module diagram of a nanosecond high-voltage pulse energy emission self-test system provided by the present application, the system includes an impedance value determination module, a nanosecond pulse energy generation module, a pulse current detection module, a simulated load module and a central control module.

[0057] The functions of each module are described below:

[0058] 1. Impedance value determination module. This module is used to determine the impedance value R of the simulated load module through a load impedance test circuit before the nanosecond pulse energy generation module transmits nanosecond pulses to the simulated load module.

[0059] In this embodiment, the load impedance test circuit is composed of a signal source module 201, a voltage-controlled constant current source design module 202 and a data processing module 203. Figure 2 The load impedance test circuit performs impedance testing by connecting a voltage-controlled constant current source to a simulated load module.

[0060] First, the signal source module 201 generates a sine wave signal with a fixed voltage and frequency to provide a signal source for the voltage-controlled constant current source design module 202. The voltage-controlled constant current source design module 202 is composed of a chip AD844 and operational amplifiers U2 and U3, U2 as an input buffer, and U3 as a DC feedback so that the residual DC component of the output voltage of the pin Uout is zero. After the chip AD844 outputs the above-mentioned sine wave signal to the analog load module through the Iout pin, the analog load module generates a sinusoidal voltage signal and returns it to the load impedance test circuit. After the sinusoidal voltage signal is filtered and interference eliminated by the data processing module 203, it is converted into a first digital signal and transmitted to the central control module. The central control module obtains the impedance value of the analog load module through the formula R=U / I.

[0061] In this embodiment, the signal source module 201 can use SPWM technology or an oscillator to generate a sinusoidal wave signal with a fixed voltage and frequency, so as to provide a signal source for the voltage-controlled constant current source design module 202 .

[0062] In another embodiment, the signal source module 201 may be composed of an RC bridge oscillator circuit, such as Figure 4 As shown, the RC bridge oscillation circuit includes a frequency selection network composed of C1 / R1 and C2 / R4 and an amplifier circuit of an operational amplifier U1. After the frequency selection network generates a sine wave of a fixed frequency, the signal is amplified by the operational amplifier U1 to obtain a sine wave signal with a fixed voltage and frequency to provide a signal source for the voltage-controlled constant current source module 202. The voltage-controlled constant current source design module 202 is the same as the previous embodiment, and is still composed of a chip AD844 and operational amplifiers U2 and U3. However, operational amplifiers U4 and U5 are added to the data processing module 203, so that in addition to eliminating interference with the sinusoidal voltage signal returned by the analog load module, the data processing module 203 can also perform differential amplification processing on the sinusoidal voltage signal, and then convert the processed sinusoidal voltage signal into a first digital signal and transmit it to the central control module.

[0063] 2. Nanosecond pulse energy generation module. This module is used to generate nanosecond pulses according to the pulse parameters carried in the pulse generation instruction after receiving the pulse generation instruction, and transmit the nanosecond pulses to the simulation load module through the nanosecond pulse transmission circuit.

[0064] In this embodiment, the pulse energy generation device integrated with the nanosecond pulse emission circuit can generate corresponding nanosecond pulses according to pulse parameters, and the pulse parameters may include parameters such as voltage, electric field strength, pulse frequency, and pulse width. The pulse parameters can be determined before self-testing, or adjusted according to the impedance value during the self-testing process, or determined or adjusted according to a certain ablation treatment plan. This application does not limit the method for determining the pulse parameters.

[0065] In another embodiment, the nanosecond pulse emission circuit includes an HV power supply 301, a current limiting module 302, an energy storage module 303, a fast switch 304 and a trigger circuit 305. Figure 3 shown.

[0066] The HV power supply 301 generates a DC high voltage, and the current is limited by the current limiting module 302 to prevent the current from being too high. The energy is then stored and modulated into nanosecond pulses by the energy storage module 303. When the trigger circuit 305 receives the switch control instruction and controls the fast switch 304 to switch quickly, the energy storage module 303 quickly releases the stored energy modulated into nanosecond pulses, forming a high-voltage nanosecond pulse to act on the simulated load module.

[0067] In another embodiment, the HV power supply 301 can be selected as a high voltage power supply, which can provide a DC voltage of several thousand or even tens of thousands of volts to provide a DC high voltage for the nanosecond pulse emission circuit. The current limiting module 302 is a high voltage resistor, which limits the current by means of series resistance shunting. The energy storage module 303 is composed of a Blumlein transmission line, and the pulse width modulation formula T of the transmission line is used.R =L / V(T R The fast switch 304 is composed of a hydrogen thyristor, which is controlled by a trigger circuit 305 to quickly discharge the hydrogen thyristor to form a pulse, and is modulated into a nanosecond pulse width through the Blumlein transmission line.

[0068] 3. Pulse current detection module: After the nanosecond pulse energy generation module generates a nanosecond pulse, this module detects the current waveform data of the nanosecond pulse through a load current test circuit to determine the current I and time t.

[0069] In this embodiment, the current waveform data of the nanosecond pulse is converted into a voltage signal by a current sensor, the voltage signal is differentially amplified by an operational amplifier, and the processed voltage signal is converted into a second digital signal and transmitted to the central control module.

[0070] For example, the load current test circuit is as follows: Figure 5 As shown, the current sensor U6 is used to convert the current of the high-voltage nanosecond pulse into a voltage signal, and the data is processed through the differential amplification of the operational amplifiers U7 and U8. The processed signal is then converted into a digital signal through A / D and transmitted to the central control module to obtain the current magnitude I of the high-voltage nanosecond pulse in the time period t.

[0071] 4. Simulation load module: This module is used to receive the nanosecond pulse for detection and determine the target energy generated by the nanosecond pulse according to the impedance value R, current I and time t.

[0072] In this embodiment, the simulated load module can be an experimental carrier. After determining the high-voltage nanosecond pulse current I and time t and the impedance value R of the experimental carrier, the energy calculation formula can be used. , the energy is obtained by integrating the time of the current sent to the experimental carrier by the high-voltage nanosecond pulse.

[0073] 5. Central control module: This module is used to instruct other modules to perform corresponding operations.

[0074] For example, after the pulse current detection module completes the detection, instructing the impedance value determination module to perform an impedance test;

[0075] Sending the pulse generation instruction to the nanosecond pulse energy generation module to instruct the nanosecond pulse energy generation module to emit nanosecond pulses;

[0076] The pulse current detection module is controlled to measure current waveform data of the nanosecond pulse output to the simulation load module.

[0077] So far, completed Figure 1 Description of the system modules shown.

[0078] In the above embodiment, the self-check system generates a nanosecond pulse through a nanosecond pulse transmitting circuit, and transmits the nanosecond pulse to the simulated load module. Then, the impedance value R of the simulated load module is determined by the load impedance test circuit, and the current waveform data of the nanosecond pulse is detected by the load current test circuit, thereby determining the current I and time t of the nanosecond pulse, and finally determining the target energy generated by the nanosecond pulse by the impedance value R, current I and time t, thereby realizing accurate detection of energy. This enables the subsequent electric pulse ablation treatment to achieve precise control of the generated ablation energy at the nanosecond level. This solves the problem of not achieving the therapeutic effect due to insufficient output energy or affecting other human tissues due to excessive output energy during electric pulse ablation treatment.

[0079] like Figure 6 As shown, the present application also provides a nanosecond high-voltage pulse energy emission self-test method, which is applied to the control center of the self-test system, and the method includes:

[0080] Step S601, when it is determined to start the self-test, firstly, an impedance test is performed on a simulated load target through a load impedance test circuit to determine an impedance value R of the simulated load target.

[0081] Step S602, after receiving the pulse generation instruction, generating a nanosecond pulse according to the pulse parameters carried in the pulse generation instruction, and transmitting the nanosecond pulse to the simulated load target.

[0082] Step S603, detecting the current waveform data generated by the nanosecond pulse through a load current test circuit, determining the current I and time t of the nanosecond pulse, and determining the energy generated by the nanosecond pulse according to the current I, time t and impedance value R.

[0083] In another embodiment, performing impedance testing on a simulated load target by a load impedance testing circuit comprises:

[0084] Generate a sine wave signal with fixed voltage and frequency through a signal source, and then send the sine wave signal to the simulated load target through an AD844 chip;

[0085] After the simulated load target returns a sinusoidal voltage signal according to the sinusoidal wave signal, the sinusoidal voltage signal is converted into a first digital signal, and then the impedance value of the simulated load target is determined by the first digital signal.

[0086] In another embodiment, generating a nanosecond pulse using the pulse parameters carried in the pulse generation instruction and transmitting the nanosecond pulse to the simulated load target includes:

[0087] Generate a DC high voltage through an HV power supply, store energy generated by the DC high voltage and modulate nanosecond pulses according to the energy and the pulse parameters;

[0088] When the fast switch is turned on, the nanosecond pulse is transmitted to the simulated load target.

[0089] In another embodiment, the detecting the current waveform data generated by the nanosecond pulse by the load current testing circuit includes:

[0090] The current waveform data of the nanosecond pulse is converted into a voltage signal through a current sensor, the voltage signal is differentially amplified through an operational amplifier, and the processed voltage signal is converted into a second digital signal and transmitted to the control center, so that the control center determines the current I and time t of the nanosecond pulse according to the second digital signal.

[0091] In another embodiment, determining the target energy generated by the nanosecond pulse according to the impedance value R, the current I and the time t comprises:

[0092] By calculating the formula A target energy is determined, where Q is the target energy generated by the nanosecond pulse.

[0093] The above-mentioned embodiment of the present invention provides a nanosecond high-voltage pulse energy emission self-check system, and based on the system provides a nanosecond high-voltage pulse energy emission self-check method. Through the above-mentioned system and method, it is possible to achieve precise control of the pulse energy generated during ablation treatment, thereby avoiding the problem of failure to achieve treatment effects when energy is insufficient and treatment damage caused by excessive energy.

[0094] This embodiment also discloses a computer device, such as Figure 7 As shown, the computer device includes a processor and a memory, wherein the memory stores at least one instruction, and the at least one instruction is loaded and executed by the processor to implement the functions of any of the above-mentioned nanosecond high-voltage pulse energy emission self-test systems.

[0095] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A nanosecond high-voltage pulse energy emission self-test system, characterized in that: The system includes an impedance value determination module, a nanosecond pulse energy generation module, a pulse current detection module, a simulated load module and a central control module; The impedance value determination module is used to determine the impedance value R of the simulated load module through a load impedance test circuit before the nanosecond pulse energy generation module transmits a nanosecond pulse to the simulated load module, wherein the load impedance test circuit includes a signal source module, a voltage-controlled constant current source design module and a data processing module, the signal source module is used to generate a sinusoidal wave signal with a fixed voltage and frequency and send it to the voltage-controlled constant current source design module; the voltage-controlled constant current source design module includes an AD844 chip and a plurality of operational amplifiers, the operational amplifier is used to make the residual DC component of the output voltage of the pin Uout of the AD844 chip zero; the AD844 chip sends the sinusoidal wave signal to the simulated load module through the pin Iout; the data processing module is used to receive the sinusoidal voltage signal sent by the simulated load module, convert the sinusoidal voltage signal into a first digital signal and send it to the central control module; The nanosecond pulse energy generation module is used to generate a nanosecond pulse according to the pulse parameters carried in the pulse generation instruction after receiving the pulse generation instruction, and transmit the nanosecond pulse to the simulation load module through the nanosecond pulse transmission circuit; After the nanosecond pulse energy generation module generates the nanosecond pulse, the pulse current detection module detects the current waveform data of the nanosecond pulse through the load current test circuit to determine the current I and the time t; The simulated load module is used to receive the nanosecond pulse and determine the target energy generated by the nanosecond pulse according to the impedance value R, the current I and the time t; The central control module is used to instruct the impedance value determination module to perform impedance testing after the pulse current detection module completes the detection; Sending the pulse generation instruction to the nanosecond pulse energy generation module to instruct the nanosecond pulse energy generation module to emit nanosecond pulses; The pulse current detection module is controlled to measure current waveform data of the nanosecond pulse output to the simulation load module.

2. The system according to claim 1, characterized in that The generating of a sine wave signal with a fixed voltage and frequency comprises: The signal source module is formed by an RC bridge oscillator circuit, wherein the RC bridge oscillator circuit includes a frequency selection network composed of C1 / R1 and C2 / R4 and an amplifier circuit of an operational amplifier U1; After the fixed-frequency sine wave is generated by the frequency selection network, the sine wave is processed by the operational amplifier U1 to obtain the sine wave signal with the fixed voltage and frequency.

3. The system according to claim 1, characterized in that The nanosecond pulse emission circuit includes an HV power supply, a current limiting module, an energy storage module, a fast switch and a trigger circuit; The HV power supply is used to generate DC high voltage; The current limiting module is used to limit the current generated by the DC high voltage; The energy storage module is used to store the energy generated by the DC high voltage and modulate nanosecond pulses according to the energy; The trigger circuit is used to control the fast switch to switch according to the switch control instruction when receiving the switch control instruction; The fast switch is used to control the nanosecond pulse in the storage module to release quickly.

4. The system according to claim 1, characterized in that The current waveform data of the nanosecond pulse detected by the load current test circuit includes: The current waveform data of the nanosecond pulse is converted into a voltage signal through a current sensor, the voltage signal is differentially amplified through an operational amplifier, and the processed voltage signal is converted into a second digital signal and transmitted to the central control module.

5. A nanosecond high-voltage pulse energy emission self-test method, characterized in that: Applied to a control center of a self-checking system, the method comprises: When it is determined to start the self-test, the impedance test is first performed on the simulated load target through the load impedance test circuit to determine the impedance value R of the simulated load target, specifically including: generating a sine wave signal with a fixed voltage and frequency through a signal source and sending it to the AD844 chip, and then making the residual DC component of the output voltage of the pin Uout of the AD844 chip zero through an operational amplifier, so that the AD844 chip sends the sine wave signal to the simulated load target through the pin Iout; after the simulated load target returns a sinusoidal voltage signal according to the sinusoidal wave signal, converting the sinusoidal voltage signal into a first digital signal, and then determining the impedance value R of the simulated load target through the first digital signal; After receiving the pulse generation instruction, generating a nanosecond pulse according to the pulse parameters carried in the pulse generation instruction, and transmitting the nanosecond pulse to the simulated load target; The current waveform data generated by the nanosecond pulse is detected by a load current test circuit to determine the current I and time t of the nanosecond pulse, and the energy generated by the nanosecond pulse is determined based on the current I, time t and impedance value R.

6. The method according to claim 5, characterized in that The step of generating a nanosecond pulse by using the pulse parameters carried in the pulse generation instruction and transmitting the nanosecond pulse to the simulated load target includes: Generate a DC high voltage through an HV power supply, store energy generated by the DC high voltage and modulate nanosecond pulses according to the energy and the pulse parameters; When the fast switch is turned on, the nanosecond pulse is transmitted to the simulated load target.

7. The method according to claim 5, characterized in that The detecting of the current waveform data generated by the nanosecond pulse by the load current testing circuit comprises: The current waveform data of the nanosecond pulse is converted into a voltage signal through a current sensor, the voltage signal is differentially amplified through an operational amplifier, and the processed voltage signal is converted into a second digital signal and transmitted to the control center, so that the control center determines the current I and time t of the nanosecond pulse according to the second digital signal.

8. The method according to claim 5, characterized in that Determining the target energy generated by the nanosecond pulse according to the impedance value R, the current I and the time t comprises: By calculating the formula A target energy is determined, where Q is the target energy generated by the nanosecond pulse.

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