Plasma processing apparatus and method of installing and maintaining the same

Abstract

This invention discloses a plasma processing device and its installation and maintenance method. The plasma processing device includes: a reaction chamber, comprising a first chamber; a top cover disposed on the top of the first chamber; a second chamber disposed within the first chamber; the first chamber has an exhaust port at its bottom, a first opening on its side, and a second opening on its side, the second opening and the first opening being connected by a connecting pipe to form a channel; a base disposed within the first chamber for supporting a wafer; a retractable sealing component between the base and the second chamber; a shielding plate disposed within the second chamber for dividing the second chamber into a first accommodating space and a second accommodating space; the first accommodating space being adjacent to the base to accommodate a radio frequency guide rod connected to the base; and a lifting mechanism disposed within the second accommodating space, penetrating the shielding plate and connected to the base, for supporting the base and driving the base to move up and down. This invention can ensure stable lifting and lowering of the base and uniform gas pressure distribution within the chamber.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a plasma processing device and its installation and maintenance method. Background Technology

[0002] In plasma processing equipment, the reaction chamber contains opposing upper and lower electrodes. Plasma is generated between the upper and lower electrodes to perform deposition, etching, and other processes on the wafer supported on the lower electrode. During these processes, the electrode spacing between the upper and lower electrodes is a crucial parameter, with different process flows requiring different electrode spacings. To improve the processing capacity of a single reaction chamber and expand the process window, the electrode spacing between the upper and lower electrodes should ideally be adjustable in a timely manner according to the needs of the process flow.

[0003] In existing technologies, the lower electrode is typically mounted on a lifting device, allowing adjustment of the electrode spacing between the upper and lower electrodes by moving the lower electrode. The lower electrode is generally positioned in the center of the reaction chamber. If a gantry-type lifting device is used, the lower electrode is supported on the gantry frame, with a motor on each side synchronously driving its movement. The gantry-type lifting device is bulky and completely occupies the area directly below the lower electrode. In this case, the vacuum pump used to evacuate the reaction chamber cannot be installed directly below the lower electrode, requiring an eccentric installation. This leads to uneven etching gas pressure within the reaction chamber, affecting etching performance. If a single-axis side-drive lifting device is used, it can be installed off-center from the lower electrode's central axis, with the drive shaft supporting the lower electrode via a cantilever beam. In this case, the vacuum pump can be installed directly below the lower electrode. However, the load on the cantilever beam changes during atmospheric and vacuum transitions, causing deformation. The lower electrode will then tilt to one side due to this deformation, and the degree of tilt is variable and cannot be eliminated, similarly affecting etching performance. Therefore, it is necessary to adjust the overall structure of the plasma processing equipment. Summary of the Invention

[0004] The purpose of this invention is to provide a plasma processing device and its installation and maintenance method, so that the lifting mechanism and the gas extraction port can be set directly below the base at the same time. This not only ensures the stability of lifting the base, but also ensures that the gas pressure distribution in the reaction chamber is uniform when the gas extraction port is used to evacuate the reaction chamber or extract reaction by-products.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0006] A plasma processing apparatus, comprising:

[0007] The reaction chamber includes a first chamber; a top cover disposed on the top of the first chamber; a second chamber disposed within the first chamber; the bottom of the first chamber is provided with an air extraction port, the side of the first chamber is provided with a first opening, the side of the second chamber is provided with a second opening, the second opening and the first opening are connected by a connecting pipe and the three form a channel;

[0008] A base, disposed within the first cavity and located above the second cavity, is used to support the wafer; a retractable sealing component is provided between the base and the second cavity;

[0009] A shielding plate, disposed within the second cavity, divides the space of the second cavity into a first accommodating space and a second accommodating space; wherein the first accommodating space is adjacent to the base to accommodate a radio frequency guide rod connected to the base; and

[0010] A lifting mechanism is installed in the second accommodating space, passes through the shielding plate and is connected to the base, and is used to support the base and drive the base to move up and down.

[0011] Optionally, the top cover, the first cavity, the connecting pipe, the second cavity, the sealing component, and the base form a vacuum region;

[0012] The base, the sealing component, the second cavity, the connecting pipe, and the first opening form an atmospheric region.

[0013] Optionally, the first cavity includes: a first sidewall connected to the top cover; a first bottom plate connected to the end of the first sidewall away from the top cover; and the first opening is disposed on the first sidewall, and the air extraction port is disposed in the center of the first bottom plate.

[0014] Optionally, the second cavity includes: a second sidewall located within the first cavity and connected to the first sidewall via the connecting pipe; a second bottom plate connected to the end of the second sidewall away from the top cover; and a second opening disposed on the second sidewall.

[0015] Optionally, the second opening is disposed opposite to the first opening, and the channel is a straight channel.

[0016] Optionally, the lifting mechanism includes:

[0017] A horizontal guide rail is mounted on the second base plate;

[0018] A lower wedge plate is disposed on the horizontal guide rail and reciprocates along the horizontal guide rail in the horizontal direction; the lower wedge plate has a first inclined surface, and the first inclined surface is away from the horizontal guide rail;

[0019] An upper wedge plate has a second inclined surface; the second inclined surface is parallel to the first inclined surface and the two are slidably connected, so that the lower wedge plate reciprocates horizontally along the horizontal guide rail, thereby driving the upper wedge plate to reciprocate vertically; and

[0020] The support column has one end connected to the upper wedge plate and the other end passing through the shielding plate and connected to the base, which is used to support the base and drive the base to move back and forth in the vertical direction.

[0021] Optionally, the lifting mechanism further includes: a support plate connected to the support column and the upper wedge plate for supporting the support column; and the support plate is provided with a first recess, and the upper wedge plate is provided with a first protrusion that matches the first recess, wherein the first recess and the first protrusion cooperate to fix the support plate to the upper wedge plate.

[0022] Optionally, the lifting mechanism further includes a telescopic rod, one end of which is fixedly connected to the upper wedge plate and the other end of which is fixedly connected to the second base plate, for limiting the movement direction of the upper wedge plate.

[0023] Optionally, a stop block is also provided on the second side wall, and a second recess or a second protrusion is provided on the lifting mechanism to cooperate with the stop block.

[0024] Optionally, the horizontal guide rail extends in the same direction as the channel.

[0025] Optionally, the plasma processing apparatus further includes: a driving unit; the driving unit includes:

[0026] A linear module is inserted into the channel and connected to the lower wedge plate;

[0027] A motor is located outside the first cavity and connected to the linear module; when the motor rotates, it drives the lower wedge plate to reciprocate along the horizontal guide rail via the linear module.

[0028] Optionally, the first cavity, the connecting tube, and the second cavity are integrated into one unit.

[0029] Optionally, the plasma processing device further includes: a grounding ring disposed around the periphery of the base; and the grounding ring is connected to the second cavity through the sealing component.

[0030] Optionally, the sealing component is a bellows.

[0031] Optionally, the radio frequency guide rod is connected to the base via a retractable or non-retractable conductive component.

[0032] Optionally, the shielding plate is made of a conductive material.

[0033] Optionally, the support column is made of glass fiber reinforced plastic.

[0034] Optionally, the linear module is a ball screw pair.

[0035] On the other hand, the present invention also provides an installation and maintenance method for a plasma processing device as described above, wherein the plasma processing device further includes a drive unit, and the installation of the plasma processing device includes:

[0036] Open the top cover to separate it from the first cavity;

[0037] The lifting mechanism is placed in the second cavity through the first cavity and the channel;

[0038] The shielding plate is fixed in the second cavity to divide the second cavity into a first accommodating space and a second accommodating space that houses the lifting mechanism;

[0039] The radio frequency guide rod is fixed in the first receiving space;

[0040] The base is placed into the first cavity from top to bottom and supported on the lifting mechanism, and the base is connected to the radio frequency guide rod;

[0041] The drive unit is connected to the lifting mechanism sequentially through the first opening, the channel, and the second opening;

[0042] Connect the sealing component to the base and the second cavity respectively; and

[0043] Place the top cover on the first cavity.

[0044] Optionally, the installation and maintenance method for the plasma processing equipment includes the following steps when maintaining the plasma processing equipment:

[0045] Open the top cover to separate it from the first cavity;

[0046] Remove the base and the sealing component;

[0047] Remove the radio frequency guide rod and the shielding plate;

[0048] The drive unit is sequentially separated from the lifting mechanism through the second opening, the channel, and the first opening;

[0049] The lifting mechanism is removed through the first cavity and the channel for maintenance.

[0050] Compared with the prior art, the present invention has at least one of the following advantages:

[0051] This invention provides a plasma processing device and its installation and maintenance method. The reaction chamber of the plasma processing device includes a first chamber, a second chamber disposed within the first chamber, and a top cover disposed on the top of the first chamber. A base is provided within the first chamber, and the base is located above the second chamber. The space of the second chamber is divided into a first accommodating space and a second accommodating space by a shielding plate. A radio frequency guide rod connected to the base is provided in the first accommodating space, and a lifting mechanism for supporting the base and driving the base to move up and down is provided in the second accommodating space. Simultaneously, the evacuation port is arranged directly below the base, thereby ensuring the stability of the base's lifting and lowering, and also ensuring uniform gas pressure distribution within the reaction chamber when using the evacuation port to evacuate the reaction chamber or extract reaction byproducts.

[0052] In this invention, the first cavity has a first opening on its side and the second cavity has a second opening on its side. The second opening and the first opening are connected by a connecting pipe and form a channel that communicates with the atmospheric environment. The second opening is opposite to the first opening and the channel is a straight channel, which allows the lifting mechanism to be placed in or removed from the second cavity quickly and conveniently through the straight channel, thereby facilitating the installation and maintenance of the lifting mechanism.

[0053] In this invention, the horizontal guide rail of the lifting mechanism is located at the bottom of the second accommodating space, and the lower wedge plate reciprocates horizontally along the horizontal guide rail. The support column for supporting the base is connected to the upper wedge plate, and the second inclined surface of the upper wedge plate is parallel to the first inclined surface of the lower wedge plate and the two are slidably connected, so that the lower wedge plate reciprocates horizontally along the horizontal guide rail, driving the upper wedge plate and the support column to reciprocate vertically, thereby driving the base to reciprocate vertically. Furthermore, the lifting mechanism of this invention not only drives the base to move up and down, but also has the characteristics of simple and compact structure, small space occupation, and easy assembly and disassembly.

[0054] In this invention, the RF guide rod is connected to the base through a retractable or non-retractable conductive component, and the axis of the retractable or non-retractable conductive component coincides with the axis of the base, so that the retractable or non-retractable conductive component is located directly below the base, thereby ensuring the uniformity of the RF power applied to the base, and thus ensuring the uniformity of the wafer process results. Attached Figure Description

[0055] Figure 1 This is a schematic diagram of the structure of a plasma processing device provided in an embodiment of the present invention;

[0056] Figure 2This is a schematic diagram of the structure of the reaction chamber in a plasma processing device according to an embodiment of the present invention;

[0057] Figure 3 This is a schematic diagram of the lifting mechanism in a plasma processing device according to an embodiment of the present invention;

[0058] Figure 4 This is a cross-sectional schematic diagram of a support plate in a plasma processing device according to an embodiment of the present invention;

[0059] Figure 5 This is a schematic diagram of the structure of a plasma processing device according to an embodiment of the present invention when the support plate and the upper wedge plate are separated;

[0060] Figure 6 This is a schematic diagram of the structure of a drive unit in a plasma processing device according to an embodiment of the present invention. Detailed Implementation

[0061] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a further detailed explanation of the plasma processing equipment and its installation and maintenance method proposed in this invention. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of this invention. Please refer to the drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0062] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0063] Combined with appendix Figures 1-6 As shown, this embodiment provides a plasma processing device, including: a reaction chamber 10, which includes a first chamber 110; a top cover 100 disposed on the top of the first chamber 110; a second chamber 120 disposed within the first chamber 110; an exhaust port 112 is provided at the bottom of the first chamber 110; a first opening 111 is provided on the side of the first chamber 110; a second opening 122 is provided on the side of the second chamber 120; the second opening 122 and the first opening 111 are connected by a connecting pipe 121, and the second opening 122, the connecting pipe 121, and the first opening 111 form a channel 123; and a base 130 disposed in the first chamber 110. The base 130 is located above the second cavity 120 and is used to support the wafer. A retractable sealing component 131 is provided between the base 130 and the second cavity 120. A shielding plate 140 is disposed in the second cavity 120 and is used to divide the space of the second cavity 120 into a first accommodating space 124 and a second accommodating space 125. The first accommodating space 124 is close to the base 130 to accommodate the radio frequency guide rod 170 connected to the base 130. A lifting mechanism 150 is disposed in the second accommodating space 125, passes through the shielding plate 140 and is connected to the base 130, and is used to support the base 130 and drive the base 130 to move up and down.

[0064] Specifically, in this embodiment, the reaction chamber 10 further includes a spray head 101 opposite to the base 130. The spray head 101 is disposed on the end face of the top cover 100 near the base 130, and the spray head 101 can be connected to a gas supply device (not shown in the figure) outside the first chamber 110 for introducing process gas into the first chamber 110. At the same time, the spray head 101 can also serve as the upper electrode of the reaction chamber 10, and the base 130 can also serve as the lower electrode of the reaction chamber 10. More specifically, by moving the base 130 up and down through the lifting mechanism 150, the vertical distance between the base 130 (i.e., the lower electrode) and the spray head 101 (i.e., the upper electrode) can be adjusted so that the vertical spacing between the upper and lower electrodes meets the requirements of the corresponding process. After the vertical spacing between the upper and lower electrodes is adjusted, radio frequency power can be applied to the base 130 through the radio frequency guide rod 170 in the first accommodating space 124, so that a radio frequency electric field is generated between the upper electrode and the lower electrode and the introduced process gas is ionized into plasma to perform etching, deposition and other process processing on the wafer. However, the present invention is not limited thereto.

[0065] Please continue to refer to this. Figure 1 and Figure 2The first cavity 110 includes: a first sidewall 1101 connected to the top cover 100; a first bottom plate 1102 connected to the end of the first sidewall 1101 away from the top cover 100; optionally, the first sidewall 1101 is a cylindrical sidewall, the first opening 111 is disposed on the first sidewall 1101, and the air extraction port 112 is disposed in the center of the first bottom plate 1102.

[0066] It is understood that the second cavity 120 includes: a second sidewall 1201, located inside the first cavity 110, and connected to the first sidewall 1101 via the connecting pipe 121; a second bottom plate 1202, connected to the end of the second sidewall 1201 away from the top cover 100, for supporting the lifting mechanism 150; optionally, the second sidewall 1201 is a cylindrical sidewall, and the second opening 122 is provided on the second sidewall 1201.

[0067] Specifically, in this embodiment, the second cavity 120 is fixed inside the first cavity 110 via the connecting pipe 121, and the axis of the second cavity 120 coincides with the axis of the first cavity 110, that is, the second cavity 120 and the first cavity 110 share an axis A. More specifically, one end of the connecting pipe 121 is fixedly connected to the second side wall 1201 and communicates with the second opening 122 on the second side wall 1201, and the other end of the connecting pipe 121 is fixedly connected to the first side wall 1101 and communicates with the first opening 111 on the first side wall 1101. Both the first opening 111 and the second opening 122 are located inside the connecting pipe 121, so that the connecting pipe 121 can not only realize the fixed connection between the second cavity 120 and the first cavity 110, but also form the channel 123 communicating with the atmospheric environment together with the second opening 122 and the first opening 111. Preferably, the first cavity 110, the connecting pipe 121, and the second cavity 120 are integrally formed to ensure the stability of the connection between the first cavity 110 and the second cavity 120. Preferably, the second opening 122 is disposed opposite to the first opening 111, the connecting pipe 121 is a straight pipe, and the channel 123 is a straight channel, so that the lifting mechanism 150 can be quickly and conveniently placed into or removed from the second cavity 120 through the straight channel 123, thereby facilitating the installation and maintenance of the lifting mechanism 150, but the present invention is not limited thereto.

[0068] Please continue to refer to this. Figure 1 and Figure 2The top cover 100, the first cavity 110, the connecting pipe 121, the second cavity 120, the sealing component 131, and the base 130 form a vacuum region for processing the wafer.

[0069] Specifically, in this embodiment, the base 130 is located between the second sidewall 1201 and the top cover 100, and a retractable sealing member 131 is provided between the end of the base 130 away from the top cover 100 (i.e., the bottom end of the base) and the end of the second sidewall 1201 near the top cover 100 (i.e., the top end of the second sidewall). During the up-and-down movement of the base 130, the top cover 100, the first cavity 110, the connecting pipe 121, the second cavity 120, the sealing member 131, and the base 130 can always form a sealed area. After the first cavity 110 is evacuated through the air extraction port 112, the sealed area formed by the top cover 100, the first cavity 110, the connecting pipe 121, the second cavity 120, the sealing member 131, and the base 130 becomes a vacuum area for processing the wafer. However, the present invention is not limited thereto.

[0070] More specifically, the axis of the base 130 coincides with the axes of the second cavity 120 and the first cavity 110, that is, the base 130, the second cavity 120 and the first cavity 110 share a common axis A, so that the base 130 is located both in the center of the first cavity 110 and directly above the second cavity 120; wherein, the base 130 being located in the center of the first cavity 110 can ensure the uniformity of plasma distribution within the first cavity 110, thereby ensuring the uniformity of wafer processing results; the base 130 being located directly above the second cavity 120 can ensure that the lifting mechanism 150 disposed within the second cavity 120 is located directly below the base 130, thereby allowing the lifting mechanism 150 to uniformly support the base 130 and ensure the stability of the base 130's vertical movement, but the present invention is not limited thereto.

[0071] Furthermore, the exhaust port 112 is located in the center of the first base plate 1102, such that the exhaust port 112 is located in the center of the first cavity 110, and also directly below the base 130 and the second cavity 120. This ensures that the gas pressure distribution in the first cavity 110 is uniform when the exhaust port 112 is used to evacuate the first cavity 110 or extract reaction byproducts, thereby ensuring the uniformity of the wafer process results. However, the present invention is not limited thereto.

[0072] Please continue to refer to this. Figure 1 and Figure 2 The plasma processing device further includes a grounding ring 132, which is arranged around the periphery of the base 130; and the grounding ring 132 is connected to the second cavity 120 through the sealing component 131.

[0073] Specifically, in this embodiment, the grounding ring 132 is fixed to the radially outer side of the base 130, and the grounding ring 132 is sealed to the top end of the second sidewall 1201 through the sealing member 131. At this time, the top cover 100, the first cavity 110, the connecting pipe 121, the second cavity 120, the sealing member 131, the grounding ring 132, and the base 130 together form the sealed area or the vacuum area. Preferably, the sealing member 131 can be a conductive bellows or other conductive telescopic tube; and an insulating ring (not shown in the figure) is also provided between the grounding ring 132 and the base 130 to electrically isolate the base 130 and the grounding ring 132, so that the base 130, the grounding ring 132, and the sealing member 131 can form part of the radio frequency path, but the present invention is not limited thereto.

[0074] Specifically, in this embodiment, a windbreak ring 133 is provided at one end of the grounding ring 132 near the second sidewall 1201 (i.e., the bottom end of the grounding ring) to prevent particulate contamination caused by the blower effect during the up-and-down movement of the base 130 and the grounding ring 132 driven by the lifting mechanism 150. Preferably, the windbreak ring 133 is located on the outside of the second sidewall 1201, so that the windbreak ring 133 will not collide with the second sidewall 1201 during the up-and-down movement of the base 130, but the present invention is not limited thereto.

[0075] Please continue to refer to this. Figure 1 and Figure 2 The shielding plate 140 is made of a conductive material.

[0076] It is understood that the radio frequency guide rod 170 is connected to the base 130 via a retractable conductive component 171 or a non-retractable conductive component.

[0077] Specifically, in this embodiment, the shielding plate 140 can be horizontally disposed within the second cavity 120 and fixedly connected to the second sidewall 1201, such that the internal space of the second cavity 120 is divided into two accommodating spaces by the shielding plate 140, namely the first accommodating space 124 and the second accommodating space 125; wherein, the first accommodating space 124 is located above the second accommodating space 125, and the second accommodating space 125 communicates with the channel 123. More specifically, the base 130 is located directly above the first accommodating space 124, and the first accommodating space 124 is provided with the radio frequency guide rod 170 for providing radio frequency power to the base 130, and one end of the radio frequency guide rod 170 is connected to the base 130, and the other end is connected to the radio frequency source located outside the reaction chamber 10. Since the shielding plate 140 is made of conductive material, it can shield radio frequency energy around the base 130, i.e., within the first accommodating space 124, thereby preventing radio frequency energy leakage. Simultaneously, the lifting mechanism 150 is disposed within the second accommodating space 125, and the radio frequency guide rod 170 is disposed within the first accommodating space 124. That is, the shielding plate 140 is disposed between the lifting mechanism 150 and the radio frequency guide rod 170. Thus, when the lifting mechanism 150 reciprocates, its internal metal components will not be affected by the radio frequency guide rod 170 and will not induce a current, resulting in heat generation. This ensures the lifespan of the lifting mechanism 150 and the stability and reliability of its internal metal components. Optionally, a shielding sleeve 172 is also provided on the outer side of the radio frequency guide rod 170 to further prevent radio frequency energy leakage, but this invention is not limited thereto.

[0078] Specifically, in this embodiment, the RF guide rod 170 can be connected to the base 130 via the retractable conductive component 171. During the vertical movement of the base 130 driven by the lifting mechanism 150, the retractable conductive component 171 can extend and retract along its own axis. The RF source moves vertically under the influence of the retractable conductive component 171, ensuring RF stability. Furthermore, the axis of the retractable conductive component 171 can coincide with the axis of the base 130, meaning the retractable conductive component 171 and the base 130 share an axis A, placing the retractable conductive component 171 directly below the base 130. This ensures the uniformity of the RF power applied to the base 130, thereby ensuring the uniformity of the wafer processing results. Preferably, the retractable conductive component 171 can be a conductive bellows or other conductive telescopic tube, but this invention is not limited to this.

[0079] In some other embodiments, the radio frequency guide rod 170 may also be connected to the base 130 through the non-stretchable conductive component, and the axis of the non-stretchable conductive component may also coincide with the axis of the base 130, but the present invention is not limited thereto.

[0080] Furthermore, in this embodiment, the second accommodating space 125 is connected to the atmospheric environment through the channel 123, so that the base 130, the sealing component 131, the second cavity 120, the second opening 122, the connecting pipe 121 and the first opening 111 can form an atmospheric area, thereby enabling the lifting mechanism 150 to be placed in the second accommodating space 125 through the channel 123 and allowing the lifting mechanism 150 to work normally in the atmospheric environment, while facilitating the installation and maintenance of the lifting mechanism 150. However, the present invention is not limited thereto.

[0081] Please also refer to Figure 1 and Figure 3 The lifting mechanism 150 includes: a horizontal guide rail 1510 disposed at the bottom of the second accommodating space 125, i.e., the second base plate 1202; a lower wedge plate 1520 disposed on the horizontal guide rail 1510 and reciprocating along the horizontal guide rail 1510 in the horizontal direction; the lower wedge plate 1520 having a first inclined surface 1521, and the first inclined surface 1521 being away from the horizontal guide rail 1510; and an upper wedge plate 1530 having a second inclined surface 1531; the second... The two inclined surfaces 1531 are parallel to the first inclined surface 1521 and are slidably connected to each other, so that the lower wedge plate 1520 reciprocates in the horizontal direction along the horizontal guide rail 1510, driving the upper wedge plate 1530 to reciprocate in the vertical direction; and the support column 1540, one end of which is connected to the upper wedge plate 1530, and the other end of which passes through the shielding plate 140 and is connected to the base 130, for supporting the base 130 and driving the base 130 to reciprocate in the vertical direction.

[0082] Specifically, in this embodiment, the lifting mechanism 150 further includes a base plate 1511, which is detachably mounted on the second base plate 1202 to support the horizontal guide rail 1510. The horizontal guide rail 1510 can be fixed to the upper surface of the base plate 1511 (i.e., the end face of the base plate away from the second base plate); the horizontal guide rail 1510 is provided with a plurality of first sliders 1512, and the first sliders 1512 can reciprocate along the horizontal guide rail 1510 in the horizontal direction. The lower wedge plate 1520 can be fixed to the upper surface of the first sliders 1512 (i.e., the end face of the first slider away from the base plate), so that the lower wedge plate 1520 reciprocates along the horizontal guide rail 1510 in the horizontal direction via the first sliders 1512, thereby reducing the friction between the lower wedge plate 1520 and the horizontal guide rail 1510, and thus extending the service life of the lower wedge plate 1520. More specifically, the upper surface of the first slider 1512 is parallel to the second base plate 1202; and the two ends of the horizontal guide rail 1510 are respectively fixed with a first limiting block 1513 and a second limiting block 1514, which are used to limit the horizontal movement distance of the first slider 1512 or the lower wedge plate 1520 to prevent the first slider 1512 or the lower wedge plate 1520 from falling off the horizontal guide rail 1510. Preferably, the extension direction of the horizontal guide rail 1510 is the same as the extension direction of the channel 123, so as to facilitate the quick and convenient installation of the horizontal guide rail 1510 into the second receiving space 125 through the channel 123, and at the same time facilitate the driving of the lower wedge plate 1520 to reciprocate along the horizontal guide rail 1510 in the horizontal direction through the channel 123, but the present invention is not limited thereto.

[0083] Specifically, in this embodiment, an inclined guide rail 1522 is fixed on the first inclined surface 1521 of the lower wedge plate 1520, and the lower surface of the inclined guide rail 1522 (i.e. the end face of the inclined guide rail near the lower wedge plate) is fixedly connected to the first inclined surface 1521, and the upper surface of the inclined guide rail 1522 (i.e. the end face of the inclined guide rail away from the lower wedge plate) is parallel to the first inclined surface 1521; a plurality of second sliders 1525 are provided on the inclined guide rail 1522, and the second sliders 1525 can reciprocate along the inclined guide rail 1522. More specifically, the second inclined surface 1531 of the upper wedge plate 1530 can be fixed to the upper surface of the second slider 1525 (i.e., the end face of the second slider away from the lower wedge plate), and the upper surface of the second slider 1525 is parallel to the first inclined surface 1521. Then, the upper wedge plate 1530 can reciprocate along the inclined guide rail 1522 through the second slider 1525, thereby realizing the sliding connection between the second inclined surface 1531 and the first inclined surface 1521. This allows the lower wedge plate 1520 to reciprocate along the horizontal guide rail 1510 in the horizontal direction, thereby driving the upper wedge plate 1530 to reciprocate along the inclined guide rail 1522, so that the upper wedge plate 1530 reciprocates in the vertical direction. Meanwhile, the arrangement of the second slider 1525 and the inclined guide rail 1522 can reduce the friction between the first inclined surface 1521 and the second inclined surface 1531, thereby extending the service life of the upper wedge plate 1530 and the lower wedge plate 1520, but the present invention is not limited thereto.

[0084] Please also refer to Figure 1 , Figure 3 , Figure 4 and Figure 5 The lifting mechanism 150 further includes: a support plate 1541, connected to the support column 1540 and the upper wedge plate 1530, for supporting the support column 1540; and the support plate 1541 is provided with a first recess 1542, and the upper wedge plate 1530 is provided with a first protrusion 1532 that matches the first recess 1542. The first recess 1542 and the first protrusion 1532 cooperate to fix the support plate 1541 to the upper wedge plate 1530.

[0085] It is understood that the lifting mechanism 150 also includes a telescopic rod 1550, one end of which is fixedly connected to the upper wedge plate 1530 and the other end of which is fixedly connected to the second base plate 1202, for limiting the movement direction of the upper wedge plate 1530.

[0086] Specifically, in this embodiment, one end of the support column 1540 is fixedly connected to the support plate 1541, and the other end supports the base 130; the number of support columns 1540 is at least three, and all support columns 1540 are evenly distributed to ensure uniform force distribution when supporting the base 130. Preferably, the number of support columns 1540 is at least four; and the material of the support columns 1540 is glass fiber reinforced plastic to ensure the supporting strength of the support columns 1540, while preventing the support columns 1540 from interfering with the radio frequency path and avoiding radio frequency energy leakage, but the present invention is not limited thereto.

[0087] Specifically, in this embodiment, such as Figure 5 As shown, the support plate 1541 has a fixing block 1543 at one end away from the first opening 111, and the fixing block 1543 is fixed to the lower surface of the support plate 1541 (i.e., the end face of the support plate near the horizontal guide rail); the first recess 1542 includes a front recess 1542A, and the front recess 1542A is disposed at one end of the fixing block 1543 near the first opening 111. Correspondingly, the first protrusion 1532 includes a front protrusion 1532A that matches the front recess 1542A, and the front protrusion 1532A is disposed on the end face of the upper wedge plate 1530 near the fixing block 1543. Optionally, the recessed portion 1542 may further include a rear recessed portion 1542B, and the rear recessed portion 1542B is disposed at one end of the support plate 1541 near the first opening 111. Correspondingly, the first protrusion 1532 also includes a rear protrusion 1532B that matches the rear recessed portion 1542B, and the rear protrusion 1532B is disposed on the end face of the upper wedge plate 1530 away from the fixing block 1543. More specifically, the cooperation between the front recess 1542A and the front protrusion 1532A, and the cooperation between the rear recess 1542B and the rear protrusion 1532B, enables the detachable connection between the upper wedge plate 1530 and the support plate 1541. This allows the support column 1540 to move up and down via the support plate 1541 when the upper wedge plate 1530 reciprocates in the vertical direction. It also facilitates the disassembly and installation of the components of the lifting mechanism 150. Preferably, the rear protrusion 1532B can be fixed within the rear recess 1542B using fasteners (e.g., screws); and when the support plate 1541 is fixed to the upper wedge plate 1530, the lower surface of the support plate 1541 is in contact with the upper surface of the upper wedge plate 1530 (i.e., the end face of the upper wedge plate away from the horizontal guide rail), but this invention is not limited to this.

[0088] In some other embodiments, a matching third recess (not shown in the figure) and a third protrusion (not shown in the figure) may be provided on the lower surface of the support plate 1541 and the upper surface of the upper wedge plate 1530, so that the support plate 1541 can be fixed on the upper wedge plate 1530 by the upper and lower cooperation of the third recess and the third protrusion, but the present invention is not limited thereto.

[0089] Specifically, in this embodiment, such as Figure 3 As shown, the first end of the telescopic rod 1550 can be fixed to the base plate 1511, and the second end of the telescopic rod 1550 can be fixedly connected to the support plate 1541, so as to be fixedly connected to the upper wedge plate 1530 through the support plate 1541, and the first end and the second end of the telescopic rod 1550 are arranged opposite to each other. Since the telescopic rod 1550 can only extend and retract in the vertical direction, the telescopic rod 1550 can further ensure that the upper wedge plate 1530 only reciprocates in the vertical direction. Preferably, there are two telescopic rods 1550, but the present invention is not limited to this.

[0090] Please also refer to Figure 3 and Figure 5 The second sidewall 1201 is also provided with a stop block 180, and the lifting mechanism 150 is provided with a second recess (not shown in the figure) or a second protrusion 1515 that cooperates with the stop block 180.

[0091] In this embodiment, the stop 180 can be fixed to one end of the second sidewall 1201 near the second base plate 1202. Specifically, if the stop 180 has a fourth recess 1801 at one end near the first opening 111, then the substrate 1511 has a second protrusion 1515 matching the fourth recess 1801 at one end near the stop 180; if the stop 180 has a fourth protrusion at one end near the first opening 111 or the stop 180 itself is a fourth protrusion, then the substrate 1511 has a second recess 1515 matching the fourth protrusion at one end near the stop 180; through the second protrusion 180... The cooperation between 515 and the fourth recess 1801 or the cooperation between the second recess and the fourth protrusion can enhance the stability of the connection between the substrate 1511 and the second base plate 1202. At the same time, since the air extraction port 112 is located below the lifting mechanism 150, the cooperation between the stop block 180 and the second protrusion 1515 or the second recess can also ensure that the lifting mechanism 150 will not be affected by airflow and shake up and down when the vacuum pump (not shown in the figure) connected to the air extraction port 112 is working. However, the present invention is not limited thereto.

[0092] Please also refer to Figure 1 , Figure 3 , Figure 5 and Figure 6 The plasma processing equipment further includes a drive unit 160 connected to the lifting mechanism 150, used to drive the lower wedge plate 1520 to reciprocate horizontally along the horizontal guide rail 1510. The drive unit 160 includes a linear module 1610, which passes through the channel 123 and is connected to the lower wedge plate 1520; and a motor 1620, which is disposed outside the first cavity 110 and is connected to the linear module 1610; and when the motor 1620 rotates, it drives the lower wedge plate 1520 to reciprocate horizontally along the horizontal guide rail 1510 through the linear module 1610.

[0093] Specifically, in this embodiment, the linear module 1610 includes a lead screw 1611 fixedly connected to the output shaft of the motor 1620 and a third slider 1612 sleeved on the lead screw 1611, and the third slider 1612 is connected to the lead screw 1611 by a thread. The lower surface of the third slider 1612 (i.e., the end face of the third slider near the second base plate) is provided with a first connecting block 1613, and the first connecting block 1613 is provided with a plurality of positioning holes 1614; the lower wedge plate 1520 is provided with a second connecting block 1523 at one end near the first opening 111, and the second connecting block 1523 is provided with a positioning pin 1524 that matches the positioning hole 1614; through the cooperation of the positioning hole 1614 and the positioning pin 1524, the lower wedge plate 1520 and the linear module 1610 can be detachably connected, thereby realizing the detachable connection between the lifting mechanism 150 and the drive unit 160, which facilitates the installation and maintenance of the lifting mechanism 150 and the drive unit 160. More specifically, the output shaft of the motor 1620 rotates, causing the lead screw 1611 to rotate synchronously. The rotation of the lead screw 1611 causes the third slider 1612 and the lower wedge plate 1520 to reciprocate horizontally, thereby causing the upper wedge plate 1530 and the support column 1540 to reciprocate vertically, and consequently causing the base 130 to move up and down. Preferably, the linear module 1610 is a ball screw assembly, but this invention is not limited thereto.

[0094] Based on the same inventive concept, this embodiment also provides an installation and maintenance method for the above-mentioned plasma processing equipment. The installation of the plasma processing equipment includes: step S11, opening the top cover 100 to separate the top cover 100 from the first cavity 110; step S12, placing the lifting mechanism 150 into the second cavity 120 via the first cavity 110 and the channel 123; step S13, fixing the shielding plate 140 into the second cavity 120 to divide the second cavity 120 into a first accommodating space 124 and a second accommodating space 125 containing the lifting mechanism 150; step S1 4. Fix the radio frequency guide rod 170 in the first accommodating space 124; Step S15. Place the base 130 from top to bottom into the first cavity 110 and support it on the lifting mechanism 150, and connect the base 130 to the radio frequency guide rod 170; Step S16. Connect the driving unit 160 to the lifting mechanism 150 in sequence through the first opening 111, the channel 123, and the second opening 122; Step S17. Connect the sealing component 131 to the base 130 and the second cavity 120 respectively; and Step S18. Place the top cover 100 on the first cavity 110.

[0095] Specifically, in this embodiment, step S12 includes: placing the base plate 1511, the horizontal guide rail 1510, the lower wedge plate 1520, the upper wedge plate 1530, and the telescopic rod 1550 of the lifting mechanism 150 into the second accommodating space 125 through the first opening 111, the channel 123, and the second opening 122; placing the support column 1540 and the support plate 1541 of the lifting mechanism 150 into the second cavity 120 from top to bottom through the first cavity 110; and connecting the support plate 1541 with the upper wedge plate 1530. More specifically, the rear end protrusion 1532B of the upper wedge plate 1530 can be fixedly connected to the rear end recess 1542B of the support plate 1541 through the channel 123 by means of the fastener (e.g., screw), so that the support plate 1541 is fixedly connected to the upper wedge plate 1530, but the present invention is not limited thereto.

[0096] It is understood that maintenance of the plasma processing equipment includes: step S21, opening the top cover 100 to separate the top cover 100 from the first cavity 110; step S22, removing the base 130 and the sealing component 131; step S23, removing the radio frequency guide rod 170 and the shielding plate 140; step S24, separating the drive unit 160 from the lifting mechanism 150 sequentially through the second opening 122, the channel 123, and the first opening 111; and step S25, removing the lifting mechanism 150 through the first cavity 110 and the channel 123 for maintenance of the lifting mechanism 150.

[0097] Specifically, in this embodiment, step S25 includes: separating the support plate 1541 from the upper wedge plate 1530; removing the support column 1540 and the support plate 1541 from the second cavity 120 from bottom to top; and removing the base 130, the horizontal guide rail 1510, the lower wedge plate 1520, the upper wedge plate 1530, and the telescopic rod 1550 from the second receiving space 125 through the first opening 111, the channel 123, and the second opening 122. More specifically, the fasteners (e.g., screws) used to fix the support plate 1541 and the upper wedge plate 1530 can be removed through the channel 123 to disconnect the support plate 1541 from the upper wedge plate 1530, but the present invention is not limited thereto.

[0098] In summary, this embodiment provides a plasma processing device and its installation and maintenance method. The reaction chamber in the plasma processing device includes a first chamber, a second chamber disposed within the first chamber, and a top cover disposed on the top of the first chamber. A base is provided within the first chamber, and the base is located above the second chamber. The space of the second chamber is divided into a first accommodating space and a second accommodating space by a shielding plate. A radio frequency guide rod connected to the base is provided in the first accommodating space, and a lifting mechanism for supporting the base and driving the base to move up and down is provided in the second accommodating space. At the same time, the exhaust port is arranged directly below the base, thereby ensuring the stability of the base lifting and lowering, and also ensuring the uniform gas pressure distribution in the reaction chamber when using the exhaust port to evacuate the reaction chamber or extract reaction by-products. In this embodiment, the horizontal guide rail of the lifting mechanism is located at the bottom of the second accommodating space. The lower wedge plate reciprocates horizontally along the horizontal guide rail. The support column for supporting the base is connected to the upper wedge plate, and the second inclined surface of the upper wedge plate is parallel to the first inclined surface of the lower wedge plate and the two are slidably connected. This allows the lower wedge plate to reciprocate horizontally along the horizontal guide rail, driving the upper wedge plate and the support column to reciprocate vertically, thereby driving the base to reciprocate vertically. Furthermore, the lifting mechanism in this embodiment not only drives the base to move up and down, but also features a simple and compact structure, small space occupation, and easy assembly and disassembly.

[0099] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A plasma processing apparatus, characterized by, The plasma processing device comprises: a reaction cavity, which comprises a first cavity, a top cover arranged on the top of the first cavity, a second cavity arranged in the first cavity, an exhaust port arranged on the bottom of the first cavity, a first opening arranged on the side of the first cavity, a second opening arranged on the side of the second cavity, a connecting pipe connecting the second opening and the first opening, and a channel formed by the second opening, the first opening and the connecting pipe; a base arranged in the first cavity above the second cavity and used for carrying a wafer, a sealable sealing member arranged between the base and the second cavity; a shielding plate arranged in the second cavity and used for separating the space of the second cavity into a first accommodating space and a second accommodating space, wherein the first accommodating space is close to the base and used for accommodating a radio frequency guide rod connected to the base; the shielding plate is made of conductive material; a lifting mechanism arranged in the second accommodating space, penetrating the shielding plate and connected to the base, and used for supporting the base and moving the base up and down; a grounding ring arranged around the periphery of the base; the grounding ring is connected to the second cavity through the sealing member.

2. The plasma processing device of claim 1, wherein: the top cover, the first cavity, the connecting pipe, the second cavity, the sealing member and the base form a vacuum area; the base, the sealing member, the second cavity, the connecting pipe and the first opening form an atmospheric area. The first cavity comprises a first side wall connected to the top cover, a first bottom plate connected to the first side wall away from the top cover, and the first opening arranged on the first side wall and the exhaust port arranged in the center of the first bottom plate. The second cavity comprises a second side wall arranged in the first cavity and connected to the first side wall through the connecting pipe, and a second bottom plate connected to the second side wall away from the top cover, and the second opening arranged on the second side wall. The second opening is arranged opposite to the first opening, and the channel is a straight channel.

3. The plasma processing apparatus of claim 1, wherein, The lifting mechanism comprises:

4. The plasma processing apparatus of claim 3, wherein, a horizontal guide rail arranged on the second bottom plate; 5. The plasma processing apparatus of claim 4, wherein, a lower wedge-shaped plate arranged on the horizontal guide rail and reciprocating in the horizontal direction along the horizontal guide rail, the lower wedge-shaped plate having a first inclined surface away from the horizontal guide rail; 6. The plasma processing apparatus of claim 4, wherein, an upper wedge-shaped plate having a second inclined surface parallel to the first inclined surface and slidingly connected to the first inclined surface, so that the lower wedge-shaped plate reciprocating in the horizontal direction along the horizontal guide rail drives the upper wedge-shaped plate to reciprocate in the vertical direction; and a support column having one end connected to the upper wedge-shaped plate and the other end penetrating the shielding plate and connected to the base, used for supporting the base and driving the base to reciprocate in the vertical direction. ​ ​ ​ 7. The plasma processing apparatus of claim 6, wherein, The lifting mechanism further comprises a support plate connected with the support column and the upper wedge-shaped plate, used for bearing the support column; and the support plate is provided with a first recess, and the upper wedge-shaped plate is provided with a first protrusion matched with the first recess, and the first recess and the first protrusion cooperate to fix the support plate on the upper wedge-shaped plate.

8. The plasma processing apparatus of claim 6, wherein, The lifting mechanism further comprises a telescopic rod, one end of which is fixedly connected with the upper wedge-shaped plate, and the other end of which is fixedly connected with the second bottom plate, used for limiting the moving direction of the upper wedge-shaped plate.

9. The plasma processing apparatus of claim 6, wherein, The second side wall is further provided with a stopper, and the lifting mechanism is provided with a second recess or a second protrusion matched with the stopper.

10. The plasma processing apparatus of claim 6, wherein, The extension direction of the horizontal guide rail is the same as the extension direction of the channel.

11. The plasma processing apparatus of claim 6, wherein, Further comprising: a driving unit; The driving unit comprises: a linear module arranged in the channel and connected with the lower wedge-shaped plate; a motor arranged outside the first cavity and connected with the linear module; and when the motor rotates, the lower wedge-shaped plate is driven to reciprocate along the horizontal guide rail in the horizontal direction through the linear module.

12. The plasma processing apparatus of claim 1, wherein, The first cavity, the connecting pipe and the second cavity are integrally arranged.

13. The plasma processing apparatus of claim 1, wherein, The sealing member is a bellows.

14. The plasma processing apparatus of claim 1, wherein, The radio frequency guide rod is connected with the base through a telescopic conductive member or a non-telescopic conductive member.

15. The plasma processing apparatus of claim 6, wherein, The material of the support column is glass fiber reinforced plastic material.

16. The plasma processing apparatus of claim 11, wherein, The linear module is a ball screw pair.

17. A method of installing and maintaining a plasma processing apparatus as claimed in any one of claims 1 to 16, characterized in that, The plasma processing equipment further comprises a driving unit, and when the plasma processing equipment is installed, comprising: opening the top cover to separate the top cover from the first cavity; placing the lifting mechanism in the second cavity through the first cavity and the channel; fixing the shielding plate in the second cavity to divide the second cavity into a first containing space and a second containing space containing the lifting mechanism; fixing the radio frequency guide rod in the first containing space; placing the base into the first cavity from top to bottom and supporting the base on the lifting mechanism, and connecting the base with the radio frequency guide rod; connecting the driving unit with the lifting mechanism through the first opening, the channel and the second opening in sequence; connecting the sealing member with the base and the second cavity respectively; and placing the top cover on the first cavity.

18. The method of claim 17, wherein the method further comprises: removing the plasma processing device from the chamber; and replacing the plasma processing device with a new plasma processing device. When the plasma processing equipment is maintained, comprising: opening the top cover to separate the top cover from the first cavity; removing the base and the sealing member; removing the radio frequency guide rod and the shielding plate; disconnecting the driving unit from the lifting mechanism through the second opening, the channel and the first opening in sequence; taking out the lifting mechanism through the first cavity and the channel to maintain the lifting mechanism.

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