Methods, apparatuses, and media for layout processing

By simulating the optical signals of the photolithography process in integrated circuit manufacturing, the target position of the sampling point is determined and the position of the pattern segment is updated. This solves the problem of pattern distortion caused by optical proximity effect, improves the optimization effect and simulation accuracy of OPC, and reduces costs.

CN118838109BActive Publication Date: 2026-04-21QUANXIN INTELLIGENT MFG TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
QUANXIN INTELLIGENT MFG TECH CO LTD
Filing Date
2024-06-27
Publication Date
2026-04-21

AI Technical Summary

Technical Problem

In existing technologies for integrated circuit manufacturing, the problem of image distortion caused by optical proximity effect is difficult to solve effectively, especially when the image segment is locally symmetrical. The low accuracy of sampling point position leads to problems such as non-convergence of correction and ripples, and the simulation cost is high.

Method used

By simulating the optical signals generated on the wafer during the photolithography process, a simulation signal is generated. Based on the signal change information and current position of the simulation signal at the sampling point, the target position of the sampling point is determined, and the position of the target pattern segment in the target layout is updated to optimize optical signal compensation.

Benefits of technology

It improves OPC optimization performance, reduces graphic distortion, lowers simulation and time costs, and enhances the accuracy and efficiency of graphic correction.

✦ Generated by Eureka AI based on patent content.

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Abstract

According to exemplary embodiments of this disclosure, a method, apparatus, and medium for layout processing are provided. The method includes: acquiring a simulated signal at a sampling point corresponding to a target pattern segment in a target layout, the simulated signal being used to simulate optical signals generated on a wafer during photolithography based on the target layout; determining a target position of the sampling point in the target layout based on signal change information of the simulated signal at the sampling point and the current position of the sampling point in the target layout; and updating the position of the target pattern segment in the target layout based on the sampling point at the target position. In this manner, sampling points that more accurately represent the overall simulated signal of the pattern segment can be determined, thereby better compensating for pattern distortion on the wafer and improving the optical proximity effect correction optimization effect.
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Description

Technical Field

[0001] The embodiments of this disclosure relate primarily to the field of integrated circuits, and more specifically, to methods, apparatus, and media for layout processing. Background Technology

[0002] A circuit layout (or simply layout) is a series of graphics derived from a designed and simulated optimized circuit. It contains physical information data related to the device, such as integrated circuit dimensions and layer topology definitions. Integrated circuit manufacturers use this data to create masks. The layout pattern on the mask determines the dimensions of the devices or interconnecting physical layers on the chip.

[0003] As the technology nodes of integrated circuit manufacturing processes shrink, the distance between target patterns in integrated circuits decreases, while the density of the corresponding layout patterns on the mask increases. Because light waves diffract at the layout patterns on the mask, the actual formed pattern is distorted compared to the layout pattern. To address this, Optical Proximity Correction (OPC) has been proposed to adjust the mask layout pattern to form the desired target pattern. OPC compensates for pattern transfer distortion caused by the optical proximity effect by altering the pattern in the mask layout to change the light intensity distribution on the wafer surface during photolithography. Summary of the Invention

[0004] In a first aspect of this disclosure, a method for layout processing is provided. The method includes: acquiring a simulated signal at a sampling point corresponding to a target pattern segment in a target layout, the simulated signal being used to simulate optical signals generated on a wafer during photolithography based on the target layout; determining a target position of the sampling point in the target layout based on signal change information of the simulated signal at the sampling point and the current position of the sampling point in the target layout; and updating the position of the target pattern segment in the target layout according to the sampling point at the target position.

[0005] In a second aspect of this disclosure, an electronic device is provided. The electronic device includes a processor and a memory coupled to the processor. The memory has instructions stored therein, which, when executed by the processor, cause the electronic device to perform a method according to a first aspect of this disclosure.

[0006] In a third aspect of this disclosure, a computer-readable storage medium is provided. A computer program is stored on the computer-readable storage medium. When executed by a processor, the computer program implements the method according to a first aspect of this disclosure.

[0007] As will be understood from the following description, according to embodiments of this disclosure, a simulated signal is first generated by simulating the optical signals generated on the wafer during the photolithography process. Then, based on the changes in the simulated signal at sampling points, the target position of the sampling point is determined. The position of each pattern segment in the target layout is changed based on the target position of the sampling point. In this way, the simulated signal at the determined sampling point can better represent the overall simulated signal of the pattern segment. Therefore, the layout obtained after moving the pattern segment based on the sampling point can better compensate for the optical signals formed on the wafer. In this way, pattern distortion can be prevented, thereby improving the OPC optimization effect. Other benefits will be described below in conjunction with corresponding embodiments.

[0008] It should be understood that the content described in this summary section is not intended to limit the key or essential features of the embodiments of this disclosure, nor is it intended to restrict the scope of this disclosure. Other features of this disclosure will become readily apparent from the following description. Attached Figure Description

[0009] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. In the drawings, the same or similar reference numerals denote the same or similar elements, wherein:

[0010] Figure 1 A schematic diagram of an example environment in which the various embodiments of this disclosure can be implemented is shown;

[0011] Figure 2 A schematic diagram showing an example of a sampling point in the layout corresponding to a graphic segment;

[0012] Figure 3 A flowchart of a method for layout processing according to some embodiments of the present disclosure is shown;

[0013] Figure 4 A schematic diagram illustrating an example of a target layout according to some embodiments of the present disclosure; and

[0014] Figure 5 A block diagram is shown in which one or more embodiments of the present disclosure may be implemented. Detailed Implementation

[0015] Embodiments of this disclosure will now be described in more detail with reference to the accompanying drawings. While some embodiments of this disclosure are shown in the drawings, it should be understood that this disclosure can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of this disclosure. It should be understood that the accompanying drawings and embodiments of this disclosure are for illustrative purposes only and are not intended to limit the scope of protection of this disclosure.

[0016] In the description of embodiments of this disclosure, the term "comprising" and similar terms should be understood as open-ended inclusion, i.e., "including but not limited to". The term "based on" should be understood as "at least partially based on". The term "one embodiment" or "the embodiment" should be understood as "at least one embodiment". The terms "first", "second", etc., may refer to different or the same objects. Other explicit and implicit definitions may also be included below.

[0017] Figure 1 A schematic diagram of an example environment 100 in which the various embodiments of the present disclosure can be implemented is shown. The example environment 100 may generally include an electronic device 110.

[0018] Electronic device 110 acquires a layout 120 (also called a "mask layout") to be processed as input. The target layout 120 includes one or more patterns to be processed, such as target pattern 122. It is expected that a pattern corresponding to target pattern 122 can be obtained on the wafer after photolithography. To prevent image distortion on the wafer caused by light diffraction, the placement of each pattern in the target layout 120 needs to be determined using simulation signals. It should be understood that... Figure 1 The layouts, masks, and shapes, sizes, and numbers of target graphic segments shown are merely exemplary and not limiting. The scope of this disclosure is not limited in this respect.

[0019] Electronic device 110 processes the target layout 120 to obtain a processed target layout 120. The processed target layout 120 includes a processed target graphic 122 (also referred to as the processed target graphic), that is, the target graphic 122 has been modified. Compared with the target graphic 122 in the target layout 120 to be processed, the size and / or position of the processed target graphic 122 in the processed target layout 120 has changed. For example, in the processed target layout 120, the processed target graphic 122 is the output graphic after OPC, which can also be referred to as the "OPC-post graphic". The aforementioned changes in size and / or position of the processed target graphic 122 compared with the target graphic 122 before processing can be determined by electronic device 110. In other words, the displacement during the OPC process can be determined by electronic device 110.

[0020] To correct the target pattern 122, it can be divided into different pattern segments. These segments are then adjusted to correct the target pattern 122. Specifically, each pattern segment can have sampling points. The adjustments to the corresponding pattern segments can be determined through photolithographic simulation related to these sampling points.

[0021] In example environment 100, electronic device 110 can be any type of computing-capable device, including terminal devices or server devices. Terminal devices can be any type of mobile terminal, fixed terminal, or portable terminal, including mobile phones, desktop computers, laptop computers, notebook computers, netbook computers, tablet computers, media computers, multimedia tablets, personal communication system (PCS) devices, personal navigation devices, personal digital assistants (PDAs), audio / video players, digital cameras / camcorders, positioning devices, television receivers, radio receivers, e-book devices, gaming devices, or any combination of the foregoing, including accessories and peripherals of these devices or any combination thereof. Server devices can include, for example, computing systems / servers, such as mainframes, edge computing nodes, computing devices in cloud environments, and so on.

[0022] It should be understood that the structure and function of environment 100 are described for illustrative purposes only and do not imply any limitation on the scope of this disclosure. Figure 1 The target layout 120, the processed target layout 120, and the graphics therein shown are merely exemplary and are not intended to limit the scope of this disclosure. Exemplary embodiments according to this disclosure will now be described in detail with reference to the accompanying drawings.

[0023] As briefly mentioned above, OPC (Optical Proximity Correction) alters the light intensity distribution on the wafer surface during photolithography by changing the pattern on the mask, thereby compensating for pattern transfer distortion caused by optical proximity effects. During OPC, it is necessary to determine the sampling points corresponding to each pattern segment in the target pattern. Subsequently, the movement method and placement position of each pattern segment are determined based on the simulation signals at the sampling points. Therefore, ensuring that the selected sampling point positions are reasonable is particularly important.

[0024] Currently, sampling points are mainly determined based on pre-defined, simple rules. For example, the center point of a graphic segment is used as the sampling point. However, the accuracy of sampling point locations determined in this way is low, and it cannot accurately indicate the signal strength of the graphic segment. This problem is particularly prominent when the graphic segment is locally symmetrical. For example, if the graphic segment is a one-dimensional graphic, the sampling point will be located at the center of the one-dimensional graphic. This will cause deviations in the signal generated after the graphic segment is corrected, and it is extremely easy to encounter problems such as non-convergence of correction and ripples.

[0025] Figure 2 A schematic diagram of an example 200 sampling points is shown. (As shown) Figure 2As shown, the layout pattern 220 has a rectangular structure and includes multiple pattern segments. During the OPC process on the layout pattern 220, a corresponding sampling point needs to be determined for each pattern segment. If the determined sampling point is not in a reasonable position, it may cause optical image distortion on the wafer. For example... Figure 2 As shown by the dashed lines, the selected sampling points include the first sampling point 210-1, the second sampling point 210-2, the third sampling point 210-3, the fourth sampling point 210-4, the fifth sampling point 210-5, and the sixth sampling point 210-6. These sampling points 210-1, 210-2, 210-3, 210-4, 210-5, and 210-6 can also be collectively referred to as sampling point 210 or individually. The resulting graph (dashed lines) differs significantly from the actual layout graph (solid lines). In this case, the need to move the sampling points can be determined based on the simulation results of the simulated signal. However, this method requires multiple simulations, leading to a significant increase in time and simulation costs.

[0026] Therefore, embodiments of this disclosure propose a method for layout processing. According to embodiments of this disclosure, the method includes acquiring a simulated signal at a sampling point corresponding to a target pattern segment in a target layout. The simulated signal is used to simulate optical signals generated on a wafer during photolithography based on the target layout. Based on signal change information of the simulated signal at the sampling point and the current position of the sampling point in the target layout, a target position of the sampling point in the target layout is determined. The position of the target pattern segment in the target layout is updated based on the sampling point at the target position.

[0027] According to embodiments of this disclosure, a simulated signal is first generated by simulating the optical signals produced on the wafer during the photolithography process. Then, based on the changes in the simulated signal at sampling points, the target position of each sampling point is determined. The position of each pattern segment in the target layout is then changed based on the target position of the sampling points. In this way, the simulated signal at the determined sampling points can better represent the overall simulated signal of the pattern segment. In this manner, the layout obtained after moving the pattern segment based on the sampling points can better compensate for optical signal distortion on the wafer, thereby improving the OPC optimization effect.

[0028] The following description, with reference to the accompanying drawings, outlines exemplary embodiments of this disclosure.

[0029] Figure 3 A flowchart of a method 300 for layout processing according to some embodiments of the present disclosure is shown. In some embodiments, method 300 may be performed by, for example... Figure 1The illustrated electronic device 110 (e.g., a layout processing device) performs the procedure. It should be understood that method 300 may also include additional boxes not shown and / or some (or some) of the boxes shown may be omitted, and the scope of this disclosure is not limited in this respect.

[0030] In block 310, electronic device 110 acquires simulation signals at sampling points corresponding to target pattern segments in target layout 120. These simulation signals are used to simulate optical signals generated on the wafer during photolithography based on target layout 120. For example, in OPC, the entire layout to be corrected can be divided into different titles, and these titles can be processed sequentially. Photolithography simulation can be performed using any suitable photolithography simulation model to obtain the simulation signals.

[0031] Figure 4 A schematic diagram of an example 400 of a target layout according to some embodiments of the present disclosure is shown. Figure 4 As shown, the target graphic 122 (rectangular in this example) of the target layout 120 can be divided into multiple graphic segments, also known as target graphic segments. Figure 4 The example shows the first target graphic segment 420-1, the second target graphic segment 420-2, the third target graphic segment 420-3, and the fourth target graphic segment 420-4, which are also collectively or individually referred to as target graphic segment 420.

[0032] In some embodiments, the electronic device 110 first determines to perform a segmentation operation on the pattern 122 in the target layout to obtain one or more target pattern segments 420. Subsequently, it performs a simulation of the target layout 120 using an OPC model to obtain simulation signals simulating the optical signals generated during photolithography on the wafer based on the target layout 120. The simulation signals are used to evaluate potential imaging problems of the target layout 120 during the photolithography process. Examples include linewidth variations and deformations of the target pattern segments 420.

[0033] To prevent distortion of the generated optical signal using OPC, the target graphic segment 420 in the target layout 120 needs to be moved. In some embodiments, to reduce computational load, reasonable sampling points can be selected instead of the entire target graphic segment 420. Therefore, the sampling points need to be representative to ensure that the optical imaging signal of the target graphic segment 420 is not distorted.

[0034] refer to Figure 4 For example, Figure 4 The target graphic 122 shown requires determining the sampling points related to each graphic segment within it. Figure 4The example shows a first sampling point 410-1, a second sampling point 410-2, a third sampling point 410-3, and a fourth sampling point 410-4, which are also collectively referred to or individually as sampling point 410. The first sampling point 410-1 is the sampling point corresponding to the target graphic segment 420-1, the second sampling point 410-2 is the sampling point corresponding to the target graphic segment 420-2, the third sampling point 410-3 is the sampling point corresponding to the target graphic segment 420-3, and the fourth sampling point 410-4 is the sampling point corresponding to the target graphic segment 420-4.

[0035] In box 320, the target position of sampling point 410 in the target layout 120 is determined based on the signal change information of the simulated signal at sampling point 410 and the current position of sampling point 410 in the target layout 120.

[0036] The initial position of sampling point 410 can be determined based on simple rules. For example, sampling point 410 can be set as the center of the corresponding target pattern segment 420. However, this method of determining sampling points is relatively simple, and the accuracy of the determined sampling points is low, which may not represent the simulation signal of the pattern segment. Therefore, in order to ensure that the sampling point can represent the corresponding pattern segment, the sampling point needs to be moved to a reasonable position. In some embodiments, the purpose of OPC is to prevent mutual interference between optical signals generated by different pattern segments on the wafer. Therefore, the point in the target pattern segment 420 that is most severely interfered with can be used as sampling point 410. If the simulation signal at sampling point 410 indicates that sampling point 410 is not interfered with by other pattern segments, it means that other points in the target pattern segment 420 are also not interfered with by other pattern segments. In this case, it is not necessary to move the position of the target pattern segment 420. If the simulation signal at sampling point 410 indicates that sampling point 410 is interfered with by other pattern segments, it is necessary to move the position of the target pattern segment 420.

[0037] In some embodiments, the rationality of sampling point 410 for the target graphic segment 420 can be determined based on the signal change information of the simulated signal at sampling point 410. First, the normal of the target graphic segment 420 at sampling point 410 is determined. For the target layout 120, interference from other graphic segments to the target graphic segment 420 can be divided into interference parallel to the normal direction and interference perpendicular to the normal direction. If there is no interference from other graphic segments, the rate of change of the simulated signal at any point on the target graphic segment 420 in the direction perpendicular to the normal should be 0. Therefore, the existence of interference from other graphic segments can be determined based on the signal change of the simulated signal in the direction perpendicular to the normal at sampling point 410.

[0038] In some embodiments, the presence of interference from other graphic segments at sampling point 410 can be determined based on the signal change rate of the simulated signal at sampling point 410. Based on the determined normal at sampling point 410, it is determined whether the signal change rate of the simulated signal at sampling point 410 exceeds a change rate threshold. If the signal change rate exceeds the change rate threshold, it indicates that the simulated signal at sampling point 410 is not interfered with by other graphic segments. Therefore, the current position of sampling point 410 is determined as the target position. If the signal change rate exceeds the change rate threshold, it indicates that the simulated signal at sampling point 410 is interfered with by other graphic segments, and sampling point 410 needs to be moved.

[0039] In some embodiments, the signal rate of change is determined by determining the first partial derivative of the simulated signal in the target direction at the current position, the target direction being perpendicular to the normal of the target graphic segment 420. Based on the first partial derivative, the signal rate of change is determined. The target direction can be either the positive or negative direction of a coordinate axis. As an example, the first partial derivative of the simulated signal in the target direction is shown below:

[0040]

[0041] Where f′ x Let z(x,y) represent the first-order partial derivative, and z(x,y) represent the simulated signal at the point with coordinates (x,y) in the target graphic segment 420 of the OPC model. The Y-axis is the normal direction of the graphic segment at sampling point 410, and the target direction is the direction perpendicular to the normal (e.g., the positive X-axis direction).

[0042] In some embodiments, if the absolute value of the rate of change of the simulated signal at the sampling point is not detected to exceed the rate of change threshold, then it is not necessary to move the sampling point 410. For example, in the case where the rate of change of the signal is represented by the first-order partial derivative, it can be determined based on whether equation (2) is satisfied:

[0043]

[0044] Where k is the rate of change threshold.

[0045] The closer the rate of change of the simulated signal at sampling point 410 is to 0, the less the influence of other graphic segments on the current sampling point 410 is. In some embodiments, the mutual influence relationships among the graphic segments in the target layout 120 are quite complex. To reduce computational load and improve the feasibility of the scheme, the rate of change threshold can be set to a value close to 0. For example, the rate of change threshold k can be set to 0.05. If the absolute value of the first-order partial derivative of the model simulation signal in the target direction at sampling point 410 does not exceed 0.05, there is no need to move sampling point 410. Otherwise, the sampling point needs to be moved to a reasonable position. It should be understood that the values ​​listed herein and in other descriptions of this disclosure are merely exemplary and are not intended to be any limitation.

[0046] In some embodiments, if the rate of change of the signal exceeds a rate of change threshold, the target position of the sampling point 410 is determined based on the trend of the simulated signal at the sampling point 410 and its current position.

[0047] In some embodiments, to determine the target location of sampling point 410, the location of sampling point 410 can be randomly moved from the current location until the rate of change of the signal at sampling point 410 does not exceed a rate of change threshold. However, this method of determining the target location is inefficient.

[0048] In some embodiments, to facilitate OPC, points with strong signal changes can be designated as sampling points 410. Therefore, the movement direction of sampling point 410 can be determined based on the trend of the simulated signal at sampling point 410. Based on the movement direction and the current position of sampling point 410, the target position of sampling point 410 can be determined. Specifically, the trend of the simulated signal at sampling point 410 can be determined based on the second-order partial derivative of the simulated signal at sampling point 410 in the target direction.

[0049] For example, refer to Figure 4 For example, for the target graphic segment 420 at sampling point 410, the direction perpendicular to the normal of the target graphic segment 420 is taken as the target direction, and the target direction points towards the positive X-axis. At sampling point 410, the second partial derivative of the simulated signal in the target direction is determined. If the second partial derivative exceeds a predetermined value, the movement direction is determined to be perpendicular to the normal. If the second partial derivative does not exceed the predetermined value, the movement direction is determined to be the opposite direction to the perpendicular direction. If the target direction changes, the movement direction of sampling point 410 also changes accordingly.

[0050] As an example, the second-order partial derivative of the simulated signal in the target direction is shown below:

[0051]

[0052] Where f″ x It is the second-order partial derivative, and the target direction is the positive x-axis.

[0053] In some embodiments, in order to accurately represent the changing trend of the simulated signal at sampling point 410 using the second-order partial derivative, the predetermined value can be set to 0.

[0054] After determining the movement direction of sampling point 410, electronic device 110 determines the target position of sampling point 410 based on the movement direction. In some embodiments, sampling point 410 can be moved from its initial position along the movement direction. After each movement of sampling point 410, based on the current position of sampling point 410, it is determined whether the rate of change of the simulated signal at sampling point 410 exceeds a rate of change threshold. If it does not exceed the rate of change threshold, it indicates that the current position is the target position of sampling point 410. If it exceeds the rate of change threshold, the movement of sampling point 410 continues. During the movement, the movement step size of sampling point 410 can be a value determined based on the designer's experience; therefore, the movement step size of sampling point 410 for each movement is not limited here.

[0055] In some embodiments, the distance between the target position and the current position of sampling point 410 can be determined based on the rate of change of the simulated signal at sampling point 410 and the length of the target graphic segment 420. In some embodiments, the distance between the current position and the target position of sampling point 410 is determined based on the product of the rate of change of the simulated signal at sampling point 410 and the length of the target graphic segment 420.

[0056] by Figure 4 Taking the target graphic segment 420-1 as an example, the movement method of the sampling point corresponding to the target graphic segment 420-1 is illustrated.

[0057] For the predetermined target graphic segment 420-1, the initial position of sampling point 410-1 can be determined first based on preset rules. Subsequently, the model simulation signal at sampling point 410-1 is used... Figure 4 The first-order partial derivative in the positive X-axis direction is shown, thus determining the rate of change of the simulated signal at sampling point 410-1.

[0058] The rate of change threshold k is set to 0.05. If the absolute value of the first partial derivative of the model simulation signal in the positive X-axis direction at sampling point 410-1 does not exceed 0.05, then the current position is the target position of sampling point 410-1. If the absolute value of the first partial derivative of the model simulation signal in the positive X-axis direction at sampling point 410-1 exceeds 0.05, then sampling point 410-1 is moved based on the trend of the model simulation signal at sampling point 410-1.

[0059] Specifically, the trend of the model simulation signal at sampling point 410-1 can be determined based on the second partial derivative of the model simulation signal in the positive X-axis direction. For example, if the second partial derivative is greater than a predetermined value (e.g., 0), the direction of movement is the positive X-axis direction, and the movement distance is the product of the rate of change of the simulation signal at sampling point 410-1 and the length of the target graphic segment 420-1. The formula for calculating the movement distance at sampling point 410-1 is as follows:

[0060]

[0061] Where L is the moving distance, and segment_length represents the length of the target graphic segment 420-1.

[0062] If the second-order partial derivative is less than a predetermined value (e.g., 0), the direction of movement is the negative direction of the X-axis coordinate, and the movement distance is the product of the rate of change of the simulated signal at sampling point 410-1 and the length of the target graphic segment 420-1.

[0063] In some embodiments, to ensure that the moved sampling point 410 better represents the target graphic segment 420, the rate of change of the simulated signal at the current position can be detected after moving the sampling point 410. If the rate of change of the simulated signal at the target position does not exceed the rate of change threshold, it indicates that the sampling point 410 is a reasonable position. Otherwise, based on the rate of change and trend of the simulated signal at the current position, the sampling point 410 is moved again.

[0064] In some embodiments, the electronic device 110 updates the position of the target graphic segment 420 in the target layout 120 based on the sampling point 410 at the target location.

[0065] In some embodiments, the electronic device 110 determines the simulated signal at the target location through photolithography simulation. Based on the target location of sampling point 410, an imaging cost gradient related to the target graphic segment 420 is determined. The imaging cost gradient, also simply referred to as the cost gradient, indicates the change in imaging cost caused by changes in the graphic within the layout. It is understood that the imaging cost gradient provides information about cost reduction, and the goal of optimizing the layout is to reduce the cost of imaging using the layout. The target graphic segment 420 can be moved within the target layout 120 by reducing the imaging cost, thereby updating the position of the target graphic segment 420 within the target layout 120.

[0066] In some embodiments, one or more target graphic segments 420 in the target layout 120 can be adjusted by minimizing the imaging cost of the target layout 120 based on the imaging cost gradient. For example, an optimization problem minimizing the imaging cost can be constructed based on the determined imaging cost gradient. The target graphic segment 420 is adjusted by solving this optimization problem.

[0067] In some embodiments, adjusting the target graphic segment 420 may include determining the displacement magnitude of the target graphic segment 420 in the target layout 120, and / or the displacement direction of the target graphic segment 420 in the target layout 120.

[0068] Figure 5 A block diagram is shown in which one or more embodiments of the present disclosure may be implemented. The electronic device 500 may, for example, be used to implement... Figure 1 The electronic device 110 shown. It should be understood that, Figure 5 The electronic device 500 shown is merely exemplary and should not be construed as limiting the functionality and scope of the embodiments described herein.

[0069] like Figure 5 As shown, electronic device 500 is in the form of a general-purpose electronic device. Components of electronic device 500 may include, but are not limited to, one or more processors 510 or processing units, memory 520, storage device 530, one or more communication units 540, one or more input devices 550, and one or more output devices 560. The processing unit may be a physical or virtual processor and is capable of performing various processes according to programs stored in memory 520. In a multiprocessor system, multiple processing units execute computer-executable instructions in parallel to improve the parallel processing capability of electronic device 500.

[0070] Electronic device 500 typically includes multiple computer storage media. Such media can be any available media accessible to electronic device 500, including but not limited to volatile and non-volatile media, removable and non-removable media. Memory 520 can be volatile memory (e.g., registers, cache, random access memory (RAM)), non-volatile memory (e.g., read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory), or some combination thereof. Storage device 530 can be a removable or non-removable medium and can include machine-readable media, such as flash drives, disks, or any other media that can be used to store information and / or data (e.g., training data for training) and can be accessed within electronic device 500.

[0071] Electronic device 500 may further include additional removable / non-removable, volatile / non-volatile storage media. Although not explicitly stated... Figure 5 As shown, disk drives for reading from or writing to removable, non-volatile disks (e.g., "floppy disks") and optical disk drives for reading from or writing to removable, non-volatile optical disks can be provided. In these cases, each drive can be connected to a bus (not shown) via one or more data media interfaces. Memory 520 may include computer program product 525 having one or more program modules configured to perform various methods or actions of various embodiments of this disclosure.

[0072] Communication unit 540 enables communication with other electronic devices via a communication medium. Additionally, the functionality of components of electronic device 500 can be implemented using a single computing cluster or multiple computing machines capable of communicating via communication connections. Therefore, electronic device 500 can operate in a networked environment using logical connections to one or more other servers, network personal computers (PCs), or another network node.

[0073] Input device 550 can be one or more input devices, such as a mouse, keyboard, trackball, etc. Output device 560 can be one or more output devices, such as a monitor, speaker, printer, etc. Electronic device 500 can also communicate with one or more external devices (not shown) via communication unit 540 as needed. These external devices include storage devices, display devices, etc., and can communicate with one or more devices that enable user interaction with electronic device 500, or with any device that enables electronic device 500 to communicate with one or more other electronic devices (e.g., network card, modem, etc.). Such communication can be performed via input / output (I / O) interface (not shown).

[0074] According to an exemplary implementation of this disclosure, a computer-readable storage medium is provided that stores one or more computer instructions, wherein one or more computer instructions are executed by a processor to implement the methods described above.

[0075] Various aspects of this disclosure are described herein with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products implemented according to this disclosure. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer-readable program instructions.

[0076] These computer-readable program instructions can be provided to a processing unit of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to produce a machine such that, when executed by the processing unit of the computer or other programmable data processing apparatus, they create means for implementing the functions / actions specified in one or more blocks of the flowchart and / or block diagram. These computer-readable program instructions can also be stored in a computer-readable storage medium that causes a computer, programmable data processing apparatus, and / or other device to operate in a particular manner. Thus, the computer-readable medium storing the instructions comprises an article of manufacture that includes instructions for implementing aspects of the functions / actions specified in one or more blocks of the flowchart and / or block diagram.

[0077] Computer-readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable data processing apparatus, or other device to produce a computer-implemented process, thereby causing the instructions that execute on the computer, other programmable data processing apparatus, or other device to perform the functions / actions specified in one or more boxes of a flowchart and / or block diagram.

[0078] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of this disclosure. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of an instruction, which contains one or more executable instructions for implementing the specified logical function. In some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, may be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0079] Various implementations of this disclosure have been described above. The foregoing description is exemplary and not exhaustive, nor is it limited to the disclosed implementations. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described implementations. The terminology used herein is chosen to best explain the principles, practical applications, or improvements to technology in the market, or to enable others skilled in the art to understand the implementations disclosed herein.

Claims

1. A method for layout processing, comprising: Acquire the simulation signal at the sampling point corresponding to the target graphic segment in the target layout, the simulation signal being used to simulate the optical signal generated on the wafer during photolithography based on the target layout; as well as Based on the signal change information of the simulated signal at the sampling point and the current position of the sampling point in the target layout, the target position of the sampling point in the target layout is determined.

2. The method according to claim 1, wherein determining the target location of the sampling point comprises: Determine whether the rate of change of the simulated signal at the sampling point exceeds a rate of change threshold. as well as In response to the signal change rate exceeding the change rate threshold, the target position of the sampling point is determined based on the change trend of the simulated signal at the sampling point and the current position.

3. The method of claim 2, wherein the signal rate of change is determined by: At the current position, determine the first-order partial derivative of the simulated signal in the target direction, which is perpendicular to the normal of the target graphic segment; and The rate of change of the signal is determined based on the first-order partial derivative.

4. The method according to claim 1, wherein determining the target location of the sampling point comprises: Based on the changing trend of the simulated signal at the sampling point, the direction of movement of the sampling point is determined; as well as The target location is determined by moving the sampling point from the current location along the direction of movement.

5. The method according to claim 3, wherein the rate of change of the simulated signal at the target location does not exceed the rate of change threshold.

6. The method according to claim 1 or 4, wherein the distance between the current position and the target position is determined based on the rate of change of the simulated signal at the sampling point and the length of the target graphic segment.

7. The method according to claim 4, wherein determining the movement direction of the sampling point comprises: At the sampling point, the second-order partial derivative of the simulation signal in the target direction is determined, where the target direction is perpendicular to the normal of the target graphic segment; If the second-order partial derivative exceeds a predetermined value, the direction of movement is determined to be perpendicular to the normal. as well as If the second-order partial derivative does not exceed the predetermined value, the direction of movement is determined to be the opposite direction to the direction perpendicular to the normal.

8. The method according to claim 1, further comprising: Based on the sampling point at the target location, update the position of the target graphic segment in the target map.

9. The method of claim 8, wherein updating the position of the target graphic segment in the target layout comprises: The simulated signal at the target location was determined through photolithography simulation. Based on the target location of the sampling points, determine the imaging cost gradient related to the target graphic segment; as well as The target graphic segment is moved in the target map by reducing the imaging cost gradient.

10. The method according to claim 2, further comprising: In response to the fact that the rate of change of the signal does not exceed the rate of change threshold, the current position of the sampling point is determined as the target position.

11. The method according to claim 2, wherein the rate of change threshold is 0.

05.

12. The method according to claim 6, wherein the distance between the current position and the target position is determined based on the product of the rate of change of the simulated signal at the sampling point and the length of the target graphic segment.

13. An electronic device, characterized in that, include: At least one processing unit; as well as At least one memory coupled to the at least one processing unit and storing instructions for execution by the at least one processing unit, the instructions causing the electronic device to perform the method according to any one of claims 1 to 11 when executed by the at least one processing unit.

14. A computer-readable storage medium having a computer program stored thereon, characterized in that, The computer program can be executed by a processor to implement the method according to any one of claims 1 to 11.

Citation Information

Patent Citations

  • Layout processing method, device and medium

    CN117010318A