A high-adsorption semiconductor chip cleaning agent and preparation method

Abstract

The invention relates to the field of semiconductor chips, and discloses a high-adsorbability semiconductor chip cleaning agent and a preparation method thereof. The high-adsorbability semiconductor chip cleaning agent comprises the following components by weight: 10 to 25 parts of anionic surfactant, 5 to 10 parts of organosilicon surfactant, 1 to 3 parts of sodium carbonate, 1 to 5 parts of ionic liquid corrosion inhibitor, 1 to 5 parts of chelating agent, 0.5 to 1 part of penetrant, and 40 to 60 parts of deionized water; the organosilicon surfactant is an organosilicon surfactant synthesized by using short-chain hydrogen-containing linear siloxane and polyethylene glycol allyl methyl ether through a silylation reaction; the ionic liquid corrosion inhibitor is an ionic liquid corrosion inhibitor synthesized by using N-butylimidazole and carboxyethyl thiosuccinic acid. The cleaning agent prepared by the invention can efficiently and quickly clean the chip surface, has good cleaning effect, will not corrode and attack metal components, has a bright surface without oxidation, and can reach a cleaning rate of more than 99%, and has high safety and environmental friendliness.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor chips, and in particular relates to a high-adsorption semiconductor chip cleaning agent and a preparation method thereof. Background Art

[0002] With the rapid development of the electronic information industry, the production of semiconductor chips has become particularly important in the production of integrated circuits. The quality of semiconductor chips directly affects the quality of integrated circuits. In the various processes of semiconductor chip production, dust particles and metal contamination in semiconductor chips can easily damage circuit functions, cause short circuits or open circuits, etc., leading to integrated circuit failure and the generation of geometric features, so the semiconductor chip cleaning process is a very important link. The main function of cleaning is to remove fine particle pollutants, metal particles, organic matter, oil, wax and photoresist residues left over from the previous process of semiconductor chip materials. While ensuring that the above substances can be quickly and effectively removed during the cleaning process, the cleaning liquid cannot cause corrosion or damage to the metal components on the semiconductor chip. The surface of the semiconductor chip after cleaning meets the technical requirements of no corrosion, no oxidation, bright surface, no residue, etc. At the same time, the cleaning agent cannot contain toxic and harmful components, and the waste liquid is easy to handle, effectively reducing the generation of harmful gases and avoiding pollution to the environment.

[0003] Existing semiconductor chip cleaning agents use hydrochloric acid, nitric acid, strong alkali solution or phosphate-containing surfactants as cleaning agents, but hydrochloric acid and nitric acid are corrosive and cannot remove particulate matter and organic components. The overall removal effect of strong alkali solution cleaning agents is not ideal. Although cleaning agents containing phosphate surfactants have a better cleaning effect, they cannot remove photoresist and its residues. At the same time, they pollute the environment and easily cause problems such as eutrophication of water resources and water pollution.

[0004] In addition, the existing semiconductor chip cleaning agent is added with a corrosion inhibitor to block the contact between the metal and the corrosive environment, thereby preventing or slowing down the corrosion of the metal. Corrosion inhibitors include inorganic corrosion inhibitors and organic corrosion inhibitors. Inorganic corrosion inhibitors mainly include chromates, nitrites, silicates, etc. Inorganic corrosion inhibitors will form a passivation film or a metal salt protective film on the metal surface, which has the effect of inhibiting corrosion, but traditional inorganic corrosion inhibitors are toxic and pose a threat to the environment and personal safety. Commonly used organic corrosion inhibitors mainly include aldehydes, carboxylic acids, amines, heterocyclic compounds, etc., which play a corrosion-inhibiting role by adsorbing on the metal surface or covering the active sites of the metal, but organic corrosion inhibitors have the disadvantages of being volatile, toxic, and having poor thermal stability during use. Among them, organic corrosion inhibitors are the most widely used, but due to their own non-biodegradable and volatile properties, they will cause them to deposit in the human body or the environment, destroying human health or the stability of the ecosystem. Summary of the invention

[0005] In order to solve the deficiencies mentioned in the above background technology, the purpose of the present invention is to provide a highly adsorbent semiconductor chip cleaning agent and a preparation method. The cleaning agent can efficiently and quickly clean the chip surface, has a good cleaning effect, will not corrode and attack metal components, has a bright surface and is free of oxidation, and a cleaning rate of more than 99%. At the same time, it has high safety and environmental friendliness.

[0006] The purpose of the present invention can be achieved through the following technical solutions:

[0007] A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 10-25 parts of anionic surfactant, 5-10 parts of organic silicon surfactant, 1-3 parts of sodium carbonate, 1-5 parts of ionic liquid corrosion inhibitor, 1-5 parts of chelating agent, 0.5-1 parts of penetrant, and 40-60 parts of deionized water;

[0008] The organosilicon surfactant is an organosilicon surfactant synthesized by using short-chain hydrogen-containing linear siloxane and polyethylene glycol allyl methyl ether through a hydrosilylation reaction; the ionic liquid corrosion inhibitor is an ionic liquid corrosion inhibitor synthesized by using N-butylimidazole and carboxyethyl thiosuccinic acid.

[0009] Preferably, the anionic surfactant is a mixture of sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2-5:1-2.

[0010] Preferably, the chelating agent is one or more combinations of sodium gluconate, disodium ethylenediaminetetraacetic acid and diethylenetriaminepentaacetic acid.

[0011] Preferably, the penetrant is diethylene glycol butyl ether.

[0012] Preferably, the preparation method of the ionic liquid corrosion inhibitor comprises the following steps:

[0013] A. Dissolve maleic acid in deionized water, stir until completely dissolved, add β-mercaptopropionic acid and triethylamine, and reflux at 80-95°C for 2-4 hours. After the reaction is completed, cool, filter, and dry to obtain carboxyethyl thiosuccinic acid;

[0014] B. Take carboxyethyl thiosuccinic acid in a reactor, add deionized water and stir to dissolve, then add N-butyl imidazole, place it at 45-60 ° C and stir to react for 4-6 hours. After the reaction is completed, cool it to room temperature, use chloroform to extract the excess N-butyl imidazole, take the upper aqueous phase and remove the water by rotary evaporation to obtain an ionic liquid corrosion inhibitor.

[0015] Preferably, in step A, the mass ratio of maleic acid to β-mercaptopropionic acid is 1-1.2:1.

[0016] Preferably, in step B, the mass ratio of carboxyethyl thiosuccinic acid to N-butyl imidazole is 1:0.45-1.5.

[0017] Preferably, the preparation steps of the organosilicon surfactant are as follows: polyethylene glycol allyl methyl ether is placed in a reactor, the reaction is protected by nitrogen, the temperature is raised to 100-110° C., a platinum catalyst is added, and then heptamethyltrisiloxane is added to react for 1-2 hours. After the reaction is completed, the reaction is distilled under reduced pressure to obtain the organosilicon surfactant.

[0018] Preferably, the mass ratio of polyethylene glycol allyl methyl ether to heptamethyltrisiloxane is 1.3-1.9:1.

[0019] A method for preparing a highly adsorbent semiconductor chip cleaning agent comprises the following steps:

[0020] S1, weigh each raw material by weight;

[0021] S2, mixing anionic surfactant, organosilicon surfactant and deionized water, adding sodium carbonate and stirring at a rotation speed of 300-600 r / min to obtain a mixed solution;

[0022] S3. Add a chelating agent, an ionic liquid corrosion inhibitor and a penetrant into the mixed solution, and stir until a clear and stable solution is obtained to obtain a highly adsorbent semiconductor chip cleaning agent.

[0023] Beneficial effects of the present invention:

[0024] The present invention utilizes short-chain hydrogen-containing linear siloxane heptamethyltrisiloxane and polyethylene glycol allyl methyl ether to synthesize an organic silicon surfactant with good wettability, super spreadability and pore permeability through a silicon hydrogen addition reaction. The organic silicon surfactant can reduce the surface tension of an aqueous solution, form micelles in water, and peel off organic pollutants and particles from the surface of a chip through an emulsification and dispersion effect. At the same time, the organic silicon surfactant forms an adsorption layer on the surface of solid particles, which increases the three-dimensional space barrier between the particles and prevents the particles from re-aggregating. Then, anionic surfactants such as fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate are selected to be compounded with the organic silicon surfactant. The fatty alcohol polyoxyethylene ether carboxylate has a strong coordination group and can complex and dissolve metal ions such as calcium, magnesium, and iron in pollutants. Sodium dodecylbenzene sulfonate has good water solubility, is not easy to oxidize, and has strong permeability. The anionic surfactant and the organic silicon surfactant are compounded for use, which can further reduce the surface tension of the solution, improve the dissolution and peeling effects of micelles on pollutants, and improve the cleaning effect.

[0025] The invention uses carboxyethyl thiosuccinic acid containing three carboxyl groups in its structure as an anion. Carboxyethyl thiosuccinic acid has the characteristics of water solubility, biodegradability, rust resistance, metal chelation, water retention and emulsification dispersibility. At the same time, the carboxyethyl thiosuccinic acid contains three carboxyl groups and one sulfonic acid group in its structure, has extremely strong acidity and dispersibility, and effectively prevents secondary deposition. Carboxyethyl thiosuccinic acid and cationic N-butyl imidazole are used to synthesize an ionic liquid corrosion inhibitor. All anions and cations in the ionic liquid corrosion inhibitor are adsorbed on the metal surface. The anions and cations can act synergistically, and the anions play a major role. The prepared ionic liquid corrosion inhibitor has a high solubility in a polar acidic or alkaline corrosion environment, which is beneficial to the contact and connection between the ionic liquid corrosion inhibitor and the metal surface, and can inhibit the corrosion of the metal; the sodium carbonate added in the present invention has a good degreasing effect, and can remove the oxide film on the chip surface and the particles and other pollutants deposited therein; the added chelating agent has different degrees of chelating ability for most metal ions, and can remove the metal ion pollutants on the chip surface; the added penetrant diethylene glycol butyl ether helps to promote the cleaning agent to penetrate into the dirt, thereby promoting the complexation and dissolution of the pollutants by the surfactant.

[0026] The cleaning agent prepared by the present invention can achieve excellent cleaning effect, can remove stubborn residual substances such as oil, oxides, fine metal particles, wax and photoresist, and the cleaning and removal rate reaches more than 99%. It is non-corrosive to chips and has high safety and environmental friendliness. DETAILED DESCRIPTION

[0027] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] Example 1 The preparation steps of an organosilicon surfactant are as follows:

[0029] 38 g of polyethylene glycol allyl methyl ether was placed in a reactor, the reaction was protected by nitrogen, the temperature was raised to 105° C., a platinum catalyst was added, and then 20 g of heptamethyltrisiloxane was added to react for 1 hour. After the reaction was completed, distillation was carried out under reduced pressure to obtain an organosilicon surfactant.

[0030] Example 2 The specific steps for preparing an organosilicon surfactant are as follows:

[0031] 33 g of polyethylene glycol allyl methyl ether was placed in a reactor, the reaction was protected by nitrogen, the temperature was raised to 100° C., a platinum catalyst was added, and then 22 g of heptamethyltrisiloxane was added to react for 2 h. After the reaction was completed, distillation was carried out under reduced pressure to obtain an organosilicon surfactant.

[0032] Example 3 The specific steps for preparing an organosilicon surfactant are as follows:

[0033] 33 g of polyethylene glycol allyl methyl ether was placed in a reactor, the reaction was protected by nitrogen, the temperature was raised to 110° C., a platinum catalyst was added, and then 25 g of heptamethyltrisiloxane was added to react for 2 h. After the reaction was completed, distillation was carried out under reduced pressure to obtain an organosilicon surfactant.

[0034] Example 4 A method for preparing an ionic liquid corrosion inhibitor comprises the following steps:

[0035] A. Dissolve 10.8 g of maleic acid in 25 mL of deionized water, stir until completely dissolved, add 10 g of β-mercaptopropionic acid and 0.002 g of triethylamine, and reflux at 90 ° C for 3 h. After the reaction is completed, cool, filter, and dry to obtain carboxyethyl thiosuccinic acid;

[0036] B. Take 10g of carboxyethyl thiosuccinic acid in a reactor, add 10mL of deionized water and stir to dissolve, then add 9.8g of N-butyl imidazole, stir and react at 50°C for 5h, cool to room temperature after the reaction is completed, use chloroform to extract the excess N-butyl imidazole, take the upper aqueous phase and remove the water by rotary evaporation to obtain an ionic liquid corrosion inhibitor.

[0037] Example 5 A method for preparing an ionic liquid corrosion inhibitor comprises the following steps:

[0038] A. Dissolve 11.3 g of maleic acid in 25 mL of deionized water, stir until completely dissolved, add 10 g of β-mercaptopropionic acid and 0.002 g of triethylamine, and reflux at 80 ° C for 4 h. After the reaction is completed, cool, filter, and dry to obtain carboxyethyl thiosuccinic acid;

[0039] B. Take 10g of carboxyethyl thiosuccinic acid in a reactor, add 10mL of deionized water and stir to dissolve, then add 5.2g of N-butyl imidazole, stir and react at 55°C for 6h, cool to room temperature after the reaction is completed, use chloroform to extract the excess N-butyl imidazole, take the upper aqueous phase and remove the water by rotary evaporation to obtain an ionic liquid corrosion inhibitor.

[0040] Example 6 A method for preparing an ionic liquid corrosion inhibitor comprises the following steps:

[0041] A. Dissolve 12g of maleic acid in 25mL of deionized water, stir until completely dissolved, add 10g of β-mercaptopropionic acid and 0.002g of triethylamine, and reflux at 95°C for 2h. After the reaction is completed, cool, filter, and dry to obtain carboxyethyl thiosuccinic acid;

[0042] B. Take 10g of carboxyethyl thiosuccinic acid in a reactor, add 10mL of deionized water and stir to dissolve, then add 14.8g of N-butyl imidazole, stir and react at 60°C for 6h, cool to room temperature after the reaction is completed, use chloroform to extract the excess N-butyl imidazole, take the upper aqueous phase and remove the water by rotary evaporation to obtain an ionic liquid corrosion inhibitor.

[0043] Example 7 A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 10 parts of anionic surfactant, 7 parts of silicone surfactant, 1 part of sodium carbonate, 1 part of ionic liquid corrosion inhibitor prepared in Example 4, 2 parts of chelating agent sodium gluconate, 0.5 parts of penetrant diethylene glycol butyl ether, and 42 parts of deionized water, wherein the anionic surfactant is a mixture of sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2:1.

[0044] The preparation method of the above-mentioned highly adsorbent semiconductor chip cleaning agent comprises the following steps:

[0045] S1. Weigh 10 parts of anionic surfactant, 7 parts of silicone surfactant, 1 part of sodium carbonate, 1 part of ionic liquid corrosion inhibitor, 2 parts of chelating agent sodium gluconate, 0.5 parts of penetrant diethylene glycol butyl ether, and 42 parts of deionized water by weight;

[0046] S2, mixing anionic surfactant, organosilicon surfactant and deionized water, adding sodium carbonate and stirring at a rotation speed of 450 r / min to obtain a mixed solution;

[0047] S3. Add a chelating agent, an ionic liquid corrosion inhibitor and a penetrant into the mixed solution, and stir until a clear and stable solution is obtained to obtain a highly adsorbent semiconductor chip cleaning agent.

[0048] Example 8 A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 17 parts of anionic surfactant, 8 parts of silicone surfactant, 3 parts of sodium carbonate, 2 parts of ionic liquid corrosion inhibitor prepared in Example 4, 3 parts of chelating agent disodium ethylenediaminetetraacetate, 1 part of penetrant diethylene glycol butyl ether, and 50 parts of deionized water, wherein the anionic surfactant is a mixture of sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2:1.

[0049] The preparation method of the above-mentioned highly adsorbent semiconductor chip cleaning agent comprises the following steps:

[0050] S1. Weigh 17 parts of anionic surfactant, 8 parts of silicone surfactant, 3 parts of sodium carbonate, 2 parts of ionic liquid corrosion inhibitor, 3 parts of chelating agent disodium ethylenediaminetetraacetate, 1 part of penetrant diethylene glycol butyl ether, and 50 parts of deionized water by weight;

[0051] S2, mixing anionic surfactant, organosilicon surfactant and deionized water, adding sodium carbonate and stirring at a rotation speed of 450 r / min to obtain a mixed solution;

[0052] S3. Add a chelating agent, an ionic liquid corrosion inhibitor and a penetrant into the mixed solution, and stir until a clear and stable solution is obtained to obtain a highly adsorbent semiconductor chip cleaning agent.

[0053] Example 9 A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 24 parts of anionic surfactant, 10 parts of silicone surfactant, 2 parts of sodium carbonate, 5 parts of ionic liquid corrosion inhibitor prepared in Example 4, 4 parts of chelating agent diethylenetriaminepentaacetic acid, 1 part of penetrant diethylene glycol butyl ether, and 58 parts of deionized water, wherein the anionic surfactant is a mixture of sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2:1.

[0054] The preparation method of the above-mentioned highly adsorbent semiconductor chip cleaning agent comprises the following steps:

[0055] S1. Weigh 24 parts of anionic surfactant, 10 parts of silicone surfactant, 2 parts of sodium carbonate, 5 parts of ionic liquid corrosion inhibitor, 4 parts of chelating agent diethylenetriaminepentaacetic acid, 1 part of penetrant diethylene glycol butyl ether, and 58 parts of deionized water by weight;

[0056] S2, mixing anionic surfactant, organosilicon surfactant and deionized water, adding sodium carbonate and stirring at a rotation speed of 450 r / min to obtain a mixed solution;

[0057] S3. Add a chelating agent, an ionic liquid corrosion inhibitor and a penetrant into the mixed solution, and stir until a clear and stable solution is obtained to obtain a highly adsorbent semiconductor chip cleaning agent.

[0058] Example 10 A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 24 parts of anionic surfactant, 10 parts of silicone surfactant, 2 parts of sodium carbonate, 5 parts of ionic liquid corrosion inhibitor prepared in Example 5, 4 parts of chelating agent diethylenetriaminepentaacetic acid, 1 part of penetrant diethylene glycol butyl ether, and 58 parts of deionized water, wherein the anionic surfactant is a mixture of sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2:1.

[0059] The preparation method of the above-mentioned highly adsorbent semiconductor chip cleaning agent is the same as that of Example 9.

[0060] Example 11 A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 24 parts of anionic surfactant, 10 parts of silicone surfactant, 2 parts of sodium carbonate, 5 parts of ionic liquid corrosion inhibitor prepared in Example 6, 4 parts of chelating agent diethylenetriaminepentaacetic acid, 1 part of penetrant diethylene glycol butyl ether, and 58 parts of deionized water, wherein the anionic surfactant is a mixture of sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2:1.

[0061] The preparation method of the above-mentioned highly adsorbent semiconductor chip cleaning agent is the same as that of Example 9.

[0062] Comparative Example 1 A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 10 parts of anionic surfactant, 1 part of sodium carbonate, 1 part of ionic liquid corrosion inhibitor prepared in Example 4, 2 parts of chelating agent sodium gluconate, 0.5 parts of penetrant diethylene glycol butyl ether, and 42 parts of deionized water, wherein the anionic surfactant is a mixture of sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2:1.

[0063] The preparation method of the above-mentioned highly adsorbent semiconductor chip cleaning agent comprises the following steps:

[0064] S1. Weigh 10 parts of anionic surfactant, 1 part of sodium carbonate, 1 part of ionic liquid corrosion inhibitor, 2 parts of chelating agent sodium gluconate, 0.5 parts of penetrant diethylene glycol butyl ether, and 42 parts of deionized water by weight;

[0065] S2, mixing anionic surfactant and deionized water, adding sodium carbonate and stirring at a rotation speed of 450 r / min to obtain a mixed solution;

[0066] S3. Add chelating agent sodium gluconate, ionic liquid corrosion inhibitor and penetrant diethylene glycol butyl ether into the mixed solution, stir until a clear and stable solution is obtained to obtain a highly adsorbent semiconductor chip cleaning agent.

[0067] Comparative Example 2 A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 7 parts of an organosilicon surfactant, 1 part of sodium carbonate, 1 part of an ionic liquid corrosion inhibitor prepared in Example 4, 2 parts of a chelating agent sodium gluconate, 0.5 parts of a penetrant diethylene glycol butyl ether, and 42 parts of deionized water.

[0068] The preparation method of the above-mentioned highly adsorbent semiconductor chip cleaning agent comprises the following steps:

[0069] S1. Weigh 7 parts of organosilicon surfactant, 1 part of sodium carbonate, 1 part of ionic liquid corrosion inhibitor, 2 parts of chelating agent sodium gluconate, 0.5 parts of penetrant diethylene glycol butyl ether, and 42 parts of deionized water by weight;

[0070] S2, mixing the organosilicon surfactant and deionized water, adding sodium carbonate and stirring at a rotation speed of 450 r / min to obtain a mixed solution;

[0071] S3. Add chelating agent sodium gluconate, ionic liquid corrosion inhibitor and penetrant diethylene glycol butyl ether into the mixed solution, stir until a clear and stable solution is obtained to obtain a highly adsorbent semiconductor chip cleaning agent.

[0072] Comparative Example 3 A highly adsorbent semiconductor chip cleaning agent comprises the following components in parts by weight: 10 parts of anionic surfactant, 7 parts of silicone surfactant, 1 part of sodium carbonate, 2 parts of chelating agent sodium gluconate, 0.5 parts of penetrant diethylene glycol butyl ether, and 42 parts of deionized water, wherein the anionic surfactant is a mixture of sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2:1.

[0073] The preparation method of the above-mentioned highly adsorbent semiconductor chip cleaning agent comprises the following steps:

[0074] S1. Weigh 10 parts of anionic surfactant, 7 parts of silicone surfactant, 1 part of sodium carbonate, 2 parts of chelating agent sodium gluconate, 0.5 parts of penetrant diethylene glycol butyl ether, and 42 parts of deionized water by weight;

[0075] S2, mixing anionic surfactant, organosilicon surfactant and deionized water, adding sodium carbonate and stirring at a rotation speed of 450 r / min to obtain a mixed solution;

[0076] S3. Add chelating agent sodium gluconate and penetrant diethylene glycol butyl ether into the mixed solution, stir until a clear and stable solution is obtained to obtain a highly adsorbent semiconductor chip cleaning agent.

[0077] Performance Testing

[0078] The cleaning agents prepared in Examples 7-11 and Comparative Examples 1-3 are used to clean semiconductor chips, comprising the following steps:

[0079] (1) preparing a cleaning agent solution, wherein the cleaning agent solution contains a cleaning agent for semiconductor chips with a mass concentration of 12%, immersing the semiconductor chip in the cleaning agent solution at a temperature of 38° C. for cleaning, and taking out the semiconductor chip after cleaning for 10 minutes;

[0080] (2) Rinse the semiconductor chip twice with deionized water at a temperature of 70°C, and then wipe the surface of the semiconductor chip with a dry cloth to complete the cleaning of the semiconductor chip;

[0081] (3) The cleaning agents prepared in Examples 7-11 and Comparative Examples 1-3 were subjected to performance tests. The test results are shown in Table 1 below.

[0082] Table 1 Test results of sample performance

[0083]

[0084] From the data in Table 1, it can be seen that the cleaning agent prepared in Examples 7-11 of the present invention can achieve a cleaning rate of more than 99%, with good cleaning effect, and the cleaned semiconductor chip has a uniform and bright color, a clean surface, no visible spots, no stains or oil stains, and no corrosion. Among them, no anionic surfactant was added in Comparative Example 1, no silicone surfactant was added in Comparative Example 2, and no ionic liquid corrosion inhibitor was added in Comparative Example 3. It was measured that the cleaning effect of Comparative Examples 1-3 was worse than that of Examples 7-11.

[0085] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0086] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.

Claims

1. A highly adsorbent semiconductor chip cleaning agent, characterized in that: The invention comprises the following components in parts by weight: 10-25 parts of anionic surfactant, 5-10 parts of organosilicon surfactant, 1-3 parts of sodium carbonate, 1-5 parts of ionic liquid corrosion inhibitor, 1-5 parts of chelating agent, 0.5-1 parts of penetrant, and 40-60 parts of deionized water; The organosilicon surfactant is an organosilicon surfactant synthesized by using short-chain hydrogen-containing linear siloxane and polyethylene glycol allyl methyl ether through a hydrosilylation reaction; the ionic liquid corrosion inhibitor is an ionic liquid corrosion inhibitor synthesized by using N-butylimidazole and carboxyethyl thiosuccinic acid.

2. The highly adsorbent semiconductor chip cleaning agent according to claim 1, characterized in that: The anionic surfactant is prepared by mixing sodium fatty alcohol polyoxyethylene ether carboxylate and sodium dodecylbenzene sulfonate in a mass ratio of 2-5:1-2.

3. The highly adsorbent semiconductor chip cleaning agent according to claim 1, characterized in that: The chelating agent is one or more combinations of sodium gluconate, disodium ethylenediaminetetraacetic acid and diethylenetriaminepentaacetic acid.

4. The highly adsorbent semiconductor chip cleaning agent according to claim 1, characterized in that: The penetrant is diethylene glycol butyl ether.

5. The highly adsorbent semiconductor chip cleaning agent according to claim 1, characterized in that: The preparation method of the ionic liquid corrosion inhibitor comprises the following steps: A. Dissolve maleic acid in deionized water, stir until completely dissolved, add β-mercaptopropionic acid and triethylamine, and reflux at 80-95°C for 2-4 hours. After the reaction is completed, cool, filter, and dry to obtain carboxyethyl thiosuccinic acid; B. Take carboxyethyl thiosuccinic acid in a reactor, add deionized water and stir to dissolve, then add N-butyl imidazole, place it at 45-60 ° C and stir to react for 4-6 hours. After the reaction is completed, cool it to room temperature, use chloroform to extract the excess N-butyl imidazole, take the upper aqueous phase and remove the water by rotary evaporation to obtain an ionic liquid corrosion inhibitor.

6. The highly adsorbent semiconductor chip cleaning agent according to claim 5, characterized in that: The mass ratio of maleic acid to β-mercaptopropionic acid in step A is 1-1.2:

1.

7. The highly adsorbent semiconductor chip cleaning agent according to claim 5, characterized in that: In the step B, the mass ratio of carboxyethyl thiosuccinic acid to N-butyl imidazole is 1:0.45-1.

5.

8. The highly adsorbent semiconductor chip cleaning agent according to claim 1, characterized in that: The preparation steps of the organosilicon surfactant are as follows: polyethylene glycol allyl methyl ether is placed in a reactor, nitrogen is passed through the reaction for protection, the temperature is raised to 100-110° C., a platinum catalyst is added, and then heptamethyltrisiloxane is added to react for 1-2 hours. After the reaction is completed, reduced pressure distillation is performed to obtain the organosilicon surfactant.

9. The highly adsorbent semiconductor chip cleaning agent according to claim 8, characterized in that: The mass ratio of the polyethylene glycol allyl methyl ether to heptamethyltrisiloxane is 1.3-1.9:

1.

10. A method for preparing the highly adsorbent semiconductor chip cleaning agent according to claim 1, characterized in that: The following steps are involved: S1, weigh each raw material by weight; S2, mixing anionic surfactant, organosilicon surfactant and deionized water, adding sodium carbonate and stirring at a rotation speed of 300-600 r / min to obtain a mixed solution; S3. Add a chelating agent, an ionic liquid corrosion inhibitor and a penetrant into the mixed solution, and stir until a clear and stable solution is obtained to obtain a highly adsorbent semiconductor chip cleaning agent.

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