Precursor pulse time measurement system, measurement method, measurement device and atomic layer deposition system

Abstract

The present application relates to a precursor pulse time measurement system and its measurement method, measurement device and atomic layer deposition system. The measurement system is applied to an atomic layer deposition system, which includes a gas storage tank, a solenoid valve and an automatic leak pressure reducing valve connected in sequence. The measurement system includes: a pressure sensor and an oscilloscope; wherein the pressure sensor is used to detect the pressure of the solenoid valve; the input end of the oscilloscope is connected to the output end of the pressure sensor, and is used to output a voltage waveform representing the pressure of the solenoid valve; wherein the precursor pulse time is the difference between two adjacent first time nodes and second time nodes, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to a first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to a second preset threshold, and the first preset threshold is greater than the second preset threshold. The use of this measurement system can accurately measure the precursor pulse time.

Description

Technical Field

[0001] The present application relates to the technical field of atomic layer deposition, and in particular to a precursor pulse time measurement system and a measurement method, a measurement device and an atomic layer deposition system. Background Art

[0002] With the widespread industrial application of technologies such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), ALD has attracted significant attention in fields such as semiconductors, catalysis, electronics, and energy due to its high-precision film deposition capabilities. ALD technology is based on the principle of a precursor half-reaction. To effectively monitor and precisely control the precursor delivery process, precise measurement of the precursor pulse timing is required.

[0003] However, in the existing technology, precursor pulse control mainly relies on the time delay set by the upper computer process control software. The automatic leakage pressure reducing valve is opened and then closed for a period of time, and the delay time is used as the precursor pulse time. This method will cause the actual precursor pulse time to differ greatly from the set time.

[0004] Therefore, in order to improve the control accuracy of precursor pulse time in the ALD process, it is urgent to research and develop new precursor pulse time measurement schemes. Summary of the Invention

[0005] Based on this, it is necessary to provide a precursor pulse time measurement system and its measurement method, measurement device and atomic layer deposition system that can accurately measure the precursor pulse time in order to address the above technical problems.

[0006] In a first aspect, the present application provides a precursor pulse time measurement system, which is applied to an atomic layer deposition system. The atomic layer deposition system includes a gas storage tank, a solenoid valve, and an automatic leak pressure reducing valve connected in sequence. The measurement system includes: a pressure sensor and an oscilloscope;

[0007] Among them, the pressure sensor is used to detect the pressure of the solenoid valve;

[0008] The input end of the oscilloscope is connected to the output end of the pressure sensor to output a voltage waveform representing the pressure of the solenoid valve;

[0009] Among them, the precursor pulse time is the difference between two adjacent first time nodes and second time nodes, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to the first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to the second preset threshold, and the first preset threshold is greater than the second preset threshold.

[0010] In one embodiment, the system further comprises:

[0011] The control terminal is connected to the output end of the oscilloscope, and the control terminal is used to obtain the voltage waveform, and determine the first time node and the second time node according to the voltage waveform, and determine the precursor pulse time according to the difference between two adjacent first time nodes and second time nodes.

[0012] In a second aspect, the present application further provides a precursor pulse time measurement method, the method comprising:

[0013] Obtain a voltage waveform; the voltage waveform is used to represent the pressure of the solenoid valve of the atomic layer deposition system;

[0014] Determining a first time node and a second time node according to the voltage waveform;

[0015] determining a precursor pulse time according to a difference between two adjacent first time nodes and a second time node;

[0016] Among them, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to the first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to the second preset threshold, and the first preset threshold is greater than the second preset threshold.

[0017] In a third aspect, the present application further provides a precursor pulse time measurement device, the device comprising:

[0018] A waveform acquisition module is used to acquire a voltage waveform; the voltage waveform is used to represent the pressure of the solenoid valve of the atomic layer deposition system;

[0019] A time node determination module, configured to determine a first time node and a second time node according to a voltage waveform;

[0020] a precursor pulse time determination module, configured to determine the precursor pulse time according to a difference between two adjacent first time nodes and a second time node;

[0021] Among them, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to the first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to the second preset threshold, and the first preset threshold is greater than the second preset threshold.

[0022] In a fourth aspect, the present application further provides a computer device comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the method in the above embodiment when executing the computer program.

[0023] In a fifth aspect, the present application also provides a computer-readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, the steps of the method in the above embodiment are implemented.

[0024] In a sixth aspect, the present application also provides a computer program product, including a computer program, which implements the steps of the method in the above embodiment when the computer program is executed by a processor.

[0025] In a seventh aspect, the present application further provides an atomic layer deposition system, comprising: a gas storage tank, a solenoid valve and an automatic leak pressure reducing valve, a control terminal, and a precursor pulse time measurement system connected in sequence;

[0026] The control terminal is connected to the solenoid valve and is used to control the air inlet of the solenoid valve to be closed or opened for atomic layer deposition;

[0027] The precursor pulse time measurement system includes a pressure sensor and an oscilloscope;

[0028] Among them, the pressure sensor is used to detect the pressure of the solenoid valve;

[0029] The input end of the oscilloscope is connected to the output end of the pressure sensor to output a voltage waveform representing the pressure of the solenoid valve;

[0030] Among them, the precursor pulse time is the difference between two adjacent first time nodes and second time nodes, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to the first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to the second preset threshold, and the first preset threshold is greater than the second preset threshold.

[0031] In one embodiment, the control terminal is also connected to an oscilloscope, and the control terminal is used to obtain the voltage waveform, and determine the first time node and the second time node based on the voltage waveform, and determine the precursor pulse time based on the difference between two adjacent first time nodes and second time nodes.

[0032] In one embodiment, the system further includes: a pressure regulating valve and a shut-off valve sequentially connected between the gas storage tank and the solenoid valve.

[0033] The above-mentioned precursor pulse time measurement system, measurement method, measurement device and atomic layer deposition system have at least the following beneficial effects:

[0034] Using a pressure sensor and oscilloscope, the timing of the automatic opening and closing of the automatic leak relief valve is monitored. The difference between these two times can accurately determine the actual precursor pulse timing. This measurement system achieves millimeter-level accuracy, enabling process engineers to more accurately determine the impact of precursor pulse timing on the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 Schematic diagram of the structure of a precursor pulse time measurement system in one embodiment;

[0037] Figure 2 is a schematic diagram of a voltage waveform displayed by an oscilloscope in one embodiment;

[0038] Figure 3 A schematic structural diagram of a precursor pulse time measurement system in another embodiment;

[0039] Figure 4 1 is a flow chart of a method for measuring precursor pulse time in one embodiment;

[0040] Figure 5 is a schematic structural diagram of an atomic layer deposition system in one embodiment;

[0041] Figure 6 1 is a structural block diagram of a precursor pulse time measurement device in one embodiment;

[0042] Figure 7 FIG. 1 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0043] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0045] It will be understood that the terms "first," "second," etc. used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element.

[0046] It should be noted that when an element is considered to be "connected" to another element, it can be directly connected to the other element or connected to the other element through an intervening element. In addition, the "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc., if there is transmission of electrical signals or data between the connected objects.

[0047] When used herein, the singular forms "a", "an", and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

[0048] As described in the background, the prior art for measuring precursor pulse time suffers from accuracy issues. The inventors discovered that the reason for this problem is that conventional precursor pulse control often involves simply setting a time delay in the host computer process control software after opening the automatic leak relief valve (or other valve controlling the precursor source), and then closing the automatic leak relief valve. Process personnel then interpret this delay as the precursor pulse time. However, this process actually includes many other delays, such as delays in executing instructions from the host computer to the slave computer, mechanical delays in pneumatic valves like the automatic leak relief valve, and delays in energizing and de-energizing the solenoid valve coil. As a result, the actual precursor pulse time can differ significantly from the set time, making it difficult to accurately control the precursor pulse time in the process.

[0049] Based on the above reasons, in an exemplary embodiment, Figure 1 As shown, the present application provides a precursor pulse time measurement system, which is applied to an atomic layer deposition system. The atomic layer deposition system includes a gas storage tank 100, a solenoid valve 300 and an automatic leakage pressure reducing valve 500 connected in sequence, and the measurement system includes: a pressure sensor 2 and an oscilloscope 4; wherein, the pressure sensor 2 is used to detect the pressure of the solenoid valve 300; the input end of the oscilloscope 4 is connected to the output end of the pressure sensor 2, and is used to output a voltage waveform representing the pressure of the solenoid valve 300; wherein, the precursor pulse time is the difference between two adjacent first time nodes and second time nodes, and the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to a first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to a second preset threshold, and the first preset threshold is greater than the second preset threshold.

[0050] Among them, such as Figure 1As shown, the atomic layer deposition system includes at least a gas storage tank 100, a solenoid valve 300, and an automatic leak relief valve 500, which are interconnected in sequence (other components or equipment are not shown). The specific structure of the atomic layer deposition system is well known to those skilled in the art and will not be described in detail here. Current atomic layer deposition systems primarily control the pulse flow of ALD precursors through the solenoid valve 300, which controls the flow of high-pressure inert gas. When the solenoid valve 300 is opened, the inert gas output from the gas storage tank 100 reaches the inlet of the automatic leak relief valve 500. When the pressure reaches a certain level, the inlet of the automatic leak relief valve 500 automatically opens, and the precursor pulse process begins. When the solenoid valve 300 is closed, the gas in the pipeline between the solenoid valve 300 and the automatic leak relief valve 500 is discharged through the exhaust port, and the pressure at the inlet of the automatic leak relief valve 500 continues to decrease. When the pressure drops to the shutoff pressure, the automatic leak relief valve 500 automatically closes, and the precursor pulse process ends.

[0051] For example, in the pulse control process of the above precursor, the following is constructed based on the pressure sensor 2 and the oscilloscope 4: Figure 1 The precursor pulse time measurement system shown in the figure, wherein the rear end of the solenoid valve 300 is connected to the pressure sensor 2, and the analog signal output line of the pressure sensor 2 is connected to the probe of the oscilloscope 4. After the air inlet of the solenoid valve 300 is opened, as the air pressure of the solenoid valve 300 increases, the pressure sensor 2 detects the pressure increase and the output voltage gradually increases; and after the preset pulse time, the solenoid valve 300 is closed, and the gas in the pipeline between the solenoid valve 300 and the automatic leakage pressure reducing valve 500 will be discharged through the exhaust port. The pressure sensor 2 detects that the pressure continues to drop, and the output voltage gradually decreases, forming a graph as shown in FIG. Figure 2 The voltage waveform representing the pressure of the solenoid valve 300 is shown and displayed on the oscilloscope 4. In the above process, when the pressure of the solenoid valve 300 increases to a certain value, the automatic leakage pressure reducing valve 500 will automatically open, and when the pressure of the solenoid valve 300 decreases to a certain value, the automatic leakage pressure reducing valve 500 will automatically close. Therefore, by monitoring the voltage waveform on the oscilloscope 4, the amplitude of the voltage waveform corresponding to the pressure value at which the automatic leakage pressure reducing valve 500 will automatically open (for example) can be found. Figure 2 70% of the stable value of the voltage in the middle), and record the time corresponding to the amplitude of the voltage waveform as the first time node (for example Figure 2 Find the amplitude of the voltage waveform corresponding to the pressure value at which the automatic leakage pressure reducing valve 500 will automatically close (e.g. Figure 2 30% of the stable value of the voltage in the middle), and record the time corresponding to the amplitude of the voltage waveform as the second time node (for example Figure 2t2 in the figure), the actual precursor pulse time can be accurately determined based on the difference between the first and second time nodes. Therefore, the first preset threshold is the amplitude of the voltage waveform corresponding to the pressure value at which the automatic leak relief valve 500 automatically closes, and the second preset threshold is the amplitude of the voltage waveform corresponding to the pressure value at which the automatic leak relief valve 500 automatically closes. It should be noted that depending on the type of automatic leak relief valve 500, the pressure values ​​at which it automatically opens and closes vary. Therefore, the first and second preset thresholds will also change with the pressure values ​​at which it automatically opens and closes, and are not limited here.

[0052] The precursor pulse timing measurement system, based on a pressure sensor and oscilloscope, monitors the opening and closing times of the automatic leak relief valve. The difference between these two times accurately determines the actual precursor pulse timing. This system achieves millimeter-level accuracy, enabling process engineers to more accurately assess the impact of precursor pulse timing on the process.

[0053] In an exemplary embodiment, Figure 3 As shown, the system further includes a control terminal 6. The control terminal 6 is connected to the output end of the oscilloscope 4, and is used to obtain a voltage waveform, and determine a first time node and a second time node based on the voltage waveform, and determine the precursor pulse time based on the difference between two adjacent first time nodes and second time nodes.

[0054] In this embodiment, by inputting the voltage waveform on the oscilloscope into the control terminal, the time points corresponding to when the amplitude of the voltage waveform rises to a first preset threshold and falls to a second preset threshold can be automatically determined. This avoids the errors and tedious operations of manually determining and recording time points, thereby improving measurement accuracy and efficiency. At the same time, the control terminal can monitor and record multiple pulse cycles, facilitating data statistics and analysis, and providing accurate data support for optimizing process parameters and improving product quality. Furthermore, the control terminal can be integrated with other systems to achieve automated control and optimization, thereby improving the automation and intelligence level of the entire process.

[0055] In an exemplary embodiment, Figure 4 As shown, the present application also provides a precursor pulse time measurement method, the method comprising:

[0056] S402 , obtaining a voltage waveform; the voltage waveform is used to represent the pressure of the solenoid valve of the atomic layer deposition system.

[0057] S404: Determine a first time node and a second time node according to the voltage waveform.

[0058] S406 , determining the precursor pulse time according to the difference between two adjacent first time nodes and the second time node.

[0059] Among them, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to the first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to the second preset threshold, and the first preset threshold is greater than the second preset threshold.

[0060] For example, the specific implementation of the precursor pulse time measurement method can refer to the description of the above-mentioned precursor pulse time measurement system embodiment, which will not be repeated here.

[0061] The above-mentioned precursor pulse time measurement method obtains the voltage waveform representing the solenoid valve pressure and determines the first time node and the second time node based on the voltage waveform. It can accurately calculate the time difference between the two nodes, thereby accurately measuring the precursor pulse time. This method not only improves measurement accuracy and reduces errors introduced by other factors (such as instruction execution delay and pneumatic valve mechanical execution delay), but also simplifies the operation process and improves measurement efficiency through automated processing. In addition, this method can monitor and record multiple pulse cycles in real time, facilitating statistical analysis of data, providing reliable data support for optimizing the atomic layer deposition process, and further improving process stability and product quality.

[0062] In an exemplary embodiment, Figure 5 As shown, the present application also provides an atomic layer deposition system, which includes: a gas tank 100, a solenoid valve 300 and an automatic leakage pressure reducing valve 500 connected in sequence, a control terminal 6, and a precursor pulse time measurement system; the control terminal 6 is connected to the solenoid valve 300, and is used to control the closing or opening of the air inlet of the solenoid valve 300 to perform atomic layer deposition; the precursor pulse time measurement system includes a pressure sensor 2 and an oscilloscope 4; wherein, the pressure sensor 2 is used to detect the pressure of the solenoid valve 300; the input end of the oscilloscope 4 is connected to the output end of the pressure sensor 2, and is used to output a voltage waveform representing the pressure of the solenoid valve 300; wherein, the precursor pulse time is the difference between two adjacent first time nodes and second time nodes, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to a first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to a second preset threshold, and the first preset threshold is greater than the second preset threshold.

[0063] Compared to the atomic layer deposition system in the aforementioned precursor pulse measurement system embodiment, the atomic layer deposition system in this embodiment further includes a control terminal 6, which is connected to the solenoid valve 300 and can be used to control the opening and closing of the solenoid valve 300. The control terminal 6 can be composed of a host computer and a programmable logic controller (PLC) or other embedded slave computer capable of IO control. Furthermore, the atomic layer deposition system further includes the precursor pulse measurement system in the aforementioned embodiment, which enables accurate measurement of the actual precursor pulse time.

[0064] The above-mentioned atomic layer deposition system can be remotely controlled through a host computer or PLC and other equipment to realize the opening and closing of the solenoid valve, thereby improving the system's automation level and operational convenience; secondly, the integration of the precursor pulse time measurement system enables the system to monitor and accurately calculate the precursor pulse time in real time, eliminating measurement errors caused by various delay factors, and ensuring the accuracy of process parameters and the stability of the process; and by precisely controlling the precursor pulse time, the atomic layer deposition process can be optimized, and the quality of the thin film and production efficiency can be improved, which is of great significance for improving the performance of devices in the fields of semiconductors, photovoltaics, and displays.

[0065] In an exemplary embodiment, the control terminal is also connected to an oscilloscope, and the control terminal is used to obtain a voltage waveform, and determine a first time node and a second time node based on the voltage waveform, and determine the precursor pulse time based on the difference between two adjacent first time nodes and second time nodes.

[0066] In this embodiment, by inputting the voltage waveform on the oscilloscope into the control terminal, the time points corresponding to when the amplitude of the voltage waveform rises to a first preset threshold and falls to a second preset threshold can be automatically determined. This avoids the errors and tedious operations of manually determining and recording time points, thereby improving measurement accuracy and efficiency. At the same time, the control terminal can monitor and record multiple pulse cycles, facilitating data statistics and analysis, and providing accurate data support for optimizing process parameters and improving product quality. Furthermore, the control terminal can be integrated with other systems to achieve automated control and optimization, thereby improving the automation and intelligence level of the entire process.

[0067] In an exemplary embodiment, Figure 5 As shown, the system further includes: a pressure regulating valve 700 and a stop valve 900 which are sequentially connected between the gas storage tank 100 and the solenoid valve 300 .

[0068] In this embodiment, the pressure regulating valve can ensure the stability of the gas pressure input to the solenoid valve, avoid the influence of pressure fluctuations on the atomic layer deposition process, and improve the stability and repeatability of the process; secondly, the shut-off valve can quickly cut off the gas supply when the solenoid valve needs to be maintained or replaced, thereby enhancing the safety and maintenance convenience of the system; through the above design, the system can more flexibly adapt to different process requirements, provide more precise and reliable gas pressure control for the atomic layer deposition process, thereby further improving the quality and performance of the deposited film.

[0069] It should be understood that, although the various steps in the flowcharts involved in the various embodiments described above are displayed in sequence according to the instructions of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowcharts involved in the various embodiments described above can include multiple steps or multiple stages, and these steps or stages are not necessarily executed and completed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of steps or stages in other steps.

[0070] Based on the same inventive concept, embodiments of the present application further provide a precursor pulse time measurement device for implementing the aforementioned precursor pulse time measurement method. The solution provided by this device is similar to the solution described in the aforementioned method. Therefore, the specific limitations of one or more of the following embodiments of the precursor pulse time measurement device can be found in the aforementioned limitations of the precursor pulse time measurement method and will not be further elaborated here.

[0071] In an exemplary embodiment, Figure 6 As shown, a precursor pulse time measurement device is provided, which includes: a waveform acquisition module 602, a time node determination module 604 and a precursor pulse time determination module 606, wherein:

[0072] The waveform acquisition module 602 is used to acquire a voltage waveform; the voltage waveform is used to represent the pressure of the solenoid valve of the atomic layer deposition system.

[0073] The time node determination module 604 is configured to determine a first time node and a second time node according to the voltage waveform.

[0074] The precursor pulse time determination module 606 is used to determine the precursor pulse time according to the difference between two adjacent first time nodes and second time nodes.

[0075] Among them, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to the first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to the second preset threshold, and the first preset threshold is greater than the second preset threshold.

[0076] Each module in the aforementioned precursor pulse time measurement device can be implemented in whole or in part via software, hardware, or a combination thereof. Each module can be embedded in or independent of a processor within a computer device as hardware, or stored in a computer device memory as software, allowing the processor to call and execute the corresponding operations of each module.

[0077] In an exemplary embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as shown in FIG. Figure 7 As shown. The computer device includes a processor, memory, an input / output interface, a communication interface, a display unit, and an input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner. The wireless manner can be achieved through WIFI, a mobile cellular network, near field communication (NFC), or other technologies. When the computer program is executed by the processor, a precursor pulse time measurement method is implemented. The display unit of the computer device is used to form a visually visible image, and can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device casing, or an external keyboard, touchpad or mouse.

[0078] Those skilled in the art will understand that Figure 7 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0079] In an exemplary embodiment, a computer device is provided, including a memory and a processor. The memory stores a computer program, and the processor implements the steps in the above method embodiments when executing the computer program.

[0080] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps in the above-mentioned method embodiments are implemented.

[0081] In one embodiment, a computer program product is provided, including a computer program, which implements the steps in the above method embodiments when executed by a processor.

[0082] Those skilled in the art will understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. In particular, any reference to memory, database, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The databases involved in the various embodiments provided herein may include at least one of a relational database and a non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the various embodiments provided herein may be, but are not limited to, general-purpose processors, central processing units (CPUs), graphics processing units (GPUs), digital signal processors (DSPs), programmable logic devices (PLDs), quantum computing-based data processing logic devices, artificial intelligence (AI) processors, and the like.

[0083] Throughout this specification, references to terms such as "some embodiments," "other embodiments," and "desired embodiments" indicate that a particular feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. Although these terms are used interchangeably throughout this specification, they do not necessarily refer to the same embodiment or example.

[0084] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0085] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A precursor pulse time measurement system, characterized in that: Applied to an atomic layer deposition system, the atomic layer deposition system includes a gas storage tank, a solenoid valve and an automatic leak pressure reducing valve connected in sequence, and the measurement system includes: a pressure sensor and an oscilloscope; Wherein, the pressure sensor is used to detect the pressure of the solenoid valve; The input end of the oscilloscope is connected to the output end of the pressure sensor, and is used to output a voltage waveform representing the pressure of the solenoid valve; The precursor pulse time is the difference between two adjacent first time nodes and a second time node, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to a first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to a second preset threshold, and the first preset threshold is greater than the second preset threshold; Wherein, the system further includes: A control terminal is connected to the output end of the oscilloscope, and the control terminal is used to obtain the voltage waveform, and determine the first time node and the second time node based on the voltage waveform, and determine the precursor pulse time based on the difference between two adjacent first time nodes and second time nodes.

2. A precursor pulse time measurement method, characterized in that: Applied to the precursor pulse time measurement system according to claim 1, the method comprises: Acquire a voltage waveform; the voltage waveform is used to represent the pressure of the solenoid valve of the atomic layer deposition system; Determining a first time node and a second time node according to the voltage waveform; determining the precursor pulse time according to a difference between two adjacent first time nodes and the second time nodes; Among them, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to a first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to a second preset threshold, and the first preset threshold is greater than the second preset threshold.

3. A precursor pulse time measurement device, characterized in that: Applied to the precursor pulse time measurement system according to claim 1, the device comprises: A waveform acquisition module is used to acquire a voltage waveform; the voltage waveform is used to represent the pressure of the solenoid valve of the atomic layer deposition system; A time node determination module, configured to determine a first time node and a second time node according to the voltage waveform; a precursor pulse time determination module, configured to determine the precursor pulse time according to a difference between two adjacent first time nodes and the second time nodes; Among them, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to a first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to a second preset threshold, and the first preset threshold is greater than the second preset threshold.

4. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to claim 2 are implemented.

5. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to claim 2 are implemented.

6. A computer program product comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to claim 2 are implemented.

7. An atomic layer deposition system, characterized in that: The system comprises: a gas storage tank, a solenoid valve and an automatic leak pressure reducing valve connected in sequence, a control terminal, and the precursor pulse time measurement system according to claim 1; The control terminal is connected to the solenoid valve and is used to control the air inlet of the solenoid valve to be closed or opened to perform atomic layer deposition; The precursor pulse time measurement system includes a pressure sensor and an oscilloscope; Wherein, the pressure sensor is used to detect the pressure of the solenoid valve; The input end of the oscilloscope is connected to the output end of the pressure sensor, and is used to output a voltage waveform representing the pressure of the solenoid valve; The precursor pulse time is the difference between two adjacent first time nodes and a second time node, the first time node is the time data corresponding to when the amplitude of the voltage waveform rises to a first preset threshold; the second time node is the time data corresponding to when the amplitude of the voltage waveform drops to a second preset threshold, and the first preset threshold is greater than the second preset threshold; In which, the control terminal is also connected to the oscilloscope, and the control terminal is used to obtain the voltage waveform, and determine the first time node and the second time node based on the voltage waveform, and determine the precursor pulse time based on the difference between two adjacent first time nodes and second time nodes.

8. The atomic layer deposition system according to claim 7, wherein: The system further comprises: a pressure regulating valve and a shut-off valve which are sequentially connected between the gas storage tank and the solenoid valve.

Images