Semiconductor structure manufacturing method and semiconductor structure

Abstract

The present application relates to a method for manufacturing a semiconductor structure and a semiconductor structure, wherein the method for manufacturing a semiconductor structure comprises: 1. providing a substrate layer; 2. coating a photoresist layer on the substrate layer; 3. removing a portion of the photoresist layer to form a glue column, wherein the side of the glue column has a recessed structure; 4. depositing a functional layer on a side of the substrate layer close to the glue column, comprising a first functional unit located on the substrate layer and a second functional unit located on the glue column; the first functional unit and the second functional unit are separated on the side of the photoresist layer; and 5. removing the glue column and the second functional unit. Because the side of the glue column has a recessed structure, when the functional layer is deposited on the side of the substrate layer close to the glue column, the first functional unit located on the substrate layer and the second functional unit located on the glue column are blocked by the recessed structure and are therefore less likely to adhere to each other.

Description

Technical Field

[0001] The present application relates to the field of semiconductor structure manufacturing methods, and in particular to a semiconductor structure manufacturing method and a semiconductor structure. Background Art

[0002] In photolithography, metal lift-off (MLI) is a technique for creating fine metal patterns, particularly suitable for the manufacture of high-precision microelectronic and optoelectronic devices. Its basic process includes: 1. Substrate preparation; 2. Photoresist coating; 3. Exposure; 4. Development; 5. Metal deposition; 6. Metal lift-off; 7. Post-processing.

[0003] However, as the field of micro-nano fabrication demands increasingly higher precision in terms of structural size and morphology, traditional metal lift-off processes are often limited by size, making it difficult to achieve nanoscale structure lift-off. Furthermore, existing metal lift-off methods face numerous challenges in nanoscale applications, such as uneven lift-off and difficulty controlling the lift-off position. In particular, during the lift-off process, unwanted metal above the photoresist cannot be completely removed during the photoresist removal process, leading to metal adhesion issues. Summary of the Invention

[0004] The purpose of this application is to provide a semiconductor structure manufacturing method and a semiconductor structure.

[0005] According to a first aspect of an embodiment of the present application, a method for manufacturing a semiconductor structure is provided, the method comprising:

[0006] providing a substrate layer;

[0007] coating a photoresist layer on the substrate layer;

[0008] Removing part of the photoresist layer to form a resin column, wherein the side of the resin column has a concave structure;

[0009] Depositing a functional layer on a side of the substrate layer close to the glue pillar, comprising a first functional unit located on the substrate layer and a second functional unit located on the glue pillar; the first functional unit and the second functional unit are separated on a side of the photoresist layer;

[0010] The glue column and the second functional unit are removed.

[0011] Since the side of the glue column has a recessed structure, when the functional layer is deposited on the side of the substrate layer close to the glue column, the first functional unit on the substrate layer and the second functional unit on the glue column are blocked by the recessed structure and are therefore not easily adhered to each other, resulting in the subsequent removal of the glue column and the second functional unit. The second functional unit can be removed more cleanly, thereby obtaining a semiconductor structure with better performance.

[0012] In some embodiments, the step of removing a portion of the photoresist layer to form a resin column, wherein the side of the resin column has a concave structure, comprises:

[0013] Expose the photoresist through a mask using a light source,

[0014] Removing a corresponding portion of the photoresist layer to form a glue column having a concave structure;

[0015] When the photoresist layer is exposed using a light source, the photoresist layer is exposed by the incident light of the light source and the reflected light reflected from the substrate layer, at least part of the incident light and the reflected light intersect, and the light wave phase difference between the incident light and the reflected light is set to an odd number of times.

[0016] When the photoresist layer is exposed using a light source, the photoresist layer is exposed to the incident light of the light source and the reflected light reflected from the substrate layer. At least part of the incident light and the reflected light intersect, and the light wave phase difference between the incident light and the reflected light is set to an odd number of times. It should be noted that, based on the above-mentioned setting, an optical standing wave effect can be produced. That is, during the photolithography process, when laser or ultraviolet light is irradiated onto the substrate layer through the photoresist, part of the light is reflected back by the substrate layer and interferes with the incident light. This interference forms a stable intensity distribution, i.e., a standing wave. Within the photoresist layer, these standing waves can cause periodic changes in exposure intensity in the vertical direction, forming constructive (overexposed) and destructive (underexposed) regions. This results in the glue column being irradiated by a waveform laser, so when the corresponding part of the photoresist layer is removed, the side of the glue column can be provided with a concave structure.

[0017] In some embodiments, after providing the substrate layer and before coating the photoresist layer on the substrate layer, a reflective coating is disposed on the substrate layer to increase the reflectivity of the substrate layer.

[0018] If the reflectivity of the substrate layer increases, it means that more light is reflected back into the photoresist layer, that is, more reflected light, which will lead to a more significant interference effect. As a result, the recessed structure is clearer, making it less likely for the first functional unit located on the substrate layer and the second functional unit located on the glue pillar to stick together.

[0019] In some embodiments, the light source is a monochromatic light source and / or a narrow-band light source.

[0020] Because monochromatic or narrowband light sources have a single or similar wavelength, the interference patterns they produce when interfering are purer and clearer. Furthermore, monochromatic light sources emit light of a nearly single wavelength, while narrowband light sources emit light over a narrow wavelength range. This means the light waves produced by these sources have excellent coherence, meaning they maintain a stable phase relationship. Consequently, using monochromatic and / or narrowband light sources can produce more pronounced interference phenomena. This, in turn, leads to a more pronounced optical standing wave effect and a more complete concave structure.

[0021] In some embodiments, the reflectivity of the substrate layer is a first reflectivity, and the reflectivity of the photoresist layer is a second reflectivity;

[0022] The first reflectivity and the second reflectivity are different.

[0023] When light passes from one medium to another, if the refractive indices of the two media are different, some of the light will be reflected back at the interface. During the photolithography process, light first passes through the photoresist layer before reaching the substrate layer. Due to the difference in refractive indices between the substrate layer and the photoresist layer, the incident light will be reflected at the interface between the two layers of material. These reflected lights interfere with the light that continues to pass through and is reflected back again from the substrate layer or the air interface. This in turn increases the occurrence of the optical standing wave effect. Here, in order to obtain different first and second reflectivities, a substrate layer material with high reflectivity can be selected, such as an untreated silicon wafer or a substrate with certain metal coatings. This can enhance the reflection of light at the photoresist / substrate layer interface, thereby exacerbating the standing wave effect.

[0024] In some embodiments, the ratio of the thickness of the glue column to the thickness of the functional layer is less than or equal to 6 and greater than or equal to 3; under this thickness setting, combined with the concave structure on the side of the glue column, the first functional unit located on the substrate layer and the second functional unit located on the glue column can basically not adhere to each other, thereby obtaining a semiconductor structure with better performance.

[0025] and / or,

[0026] The ratio of the maximum depth of the recessed structure to the thickness of the functional layer is greater than or equal to 0.5 and less than or equal to 3. As long as the ratio of the maximum depth of the recessed structure to the thickness of the functional layer is greater than , combined with the recessed structure on the side of the glue pillar, it is difficult for the first functional unit located on the substrate layer and the second functional unit located on the glue pillar to adhere to each other, thereby improving the performance of the semiconductor structure obtained.

[0027] In some embodiments, the distance between the glue pillars and the width thereof is greater than or equal to 0.4 μm and less than or equal to 1 μm. When the glue pillars are within this range, it is convenient to manufacture the recessed structure.

[0028] In some embodiments, the ratio of the maximum depth of the recessed structure to the glue column is greater than or equal to one-fifth and less than or equal to one-half. Within this range, the glue column can well achieve the supporting and separating function.

[0029] In some embodiments, removing the glue column and the second functional unit includes:

[0030] soaking the substrate layer and the photoresist layer with acetone;

[0031] performing ultrasonic treatment on the substrate layer and the photoresist layer;

[0032] heating the substrate layer and the photoresist layer;

[0033] The substrate layer and the photoresist layer are cleaned to remove the glue column and the second functional unit.

[0034] Based on the above setting, since the side of the glue column has a concave structure, the first functional unit located on the substrate layer and the second functional unit located on the glue column are less likely to adhere to each other. Therefore, the above cleaning process is adopted. The cleaning process has fewer steps and the process is simple, and it can be cleaned cleanly, thereby saving manufacturing time and cost.

[0035] According to a second aspect of the embodiments of the present application, a semiconductor structure is provided, wherein the semiconductor structure is manufactured by the semiconductor structure manufacturing method according to any one of the above embodiments;

[0036] The semiconductor structure includes a functional layer, the functional layer includes a protruding structure, and the protruding structure matches the concave structure.

[0037] Since the functional layer has a protruding structure, compared with a functional layer of the same width, the protruding structure of the functional layer has a gap, thus saving more materials than a functional layer of the same width, thereby reducing the material consumption of the functional layer 300 . BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0039] Figure 1The manufacturing process of the semiconductor structure according to one embodiment of the present application is shown Figure 1 .

[0040] Figure 2 The manufacturing process of the semiconductor structure according to one embodiment of the present application is shown Figure 2 .

[0041] Figure 3 The manufacturing process of the semiconductor structure according to one embodiment of the present application is shown Figure 3 .

[0042] Figure 4 The manufacturing process of the semiconductor structure according to one embodiment of the present application is shown Figure 4 .

[0043] Figure 5 The manufacturing process of the semiconductor structure according to one embodiment of the present application is shown Figure 5 .

[0044] Figure 6 The manufacturing process of the semiconductor structure according to one embodiment of the present application is shown Figure 6 .

[0045] Figure 7 The manufacturing process of the semiconductor structure according to one embodiment of the present application is shown Figure 7 .

[0046] Figure 8 FIG. 1 is a flowchart of a semiconductor structure fabrication process according to an embodiment of the present application.

[0047] Figure 9 FIG. 1 is a flowchart of another semiconductor structure fabrication process according to an embodiment of the present application.

[0048] Figure 10 FIG. 4 is a flowchart of a manufacturing process of another semiconductor structure according to an embodiment of the present application.

[0049] Description of reference numerals:

[0050] Substrate layer 100

[0051] Photoresist layer 200

[0052] Glue column 210

[0053] Recessed structure 220

[0054] Functional layer 300

[0055] First functional unit 310

[0056] Second functional unit 320

[0057] Raised structure 330

[0058] Mask 400

[0059] Reflective coating 500 DETAILED DESCRIPTION

[0060] Here, the technical solutions in the embodiments (or "implementations") of the present application will be clearly and completely described in conjunction with the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0061] If there are terms related to directional indications or positional relationships in the embodiments of this application (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationship, movement, etc. between the components in a specific posture (as shown in the accompanying drawings); if the specific posture changes, the directional indication or positional relationship will also change accordingly. In addition, the terms "first" and "second" in the embodiments of this application are only used for the purpose of convenience of description and should not be understood as indicating or implying relative importance.

[0062] In photolithography, metal lift-off (MLI) is a technique for creating fine metal patterns, particularly suitable for the manufacture of high-precision microelectronic and optoelectronic devices. The basic steps of this process are as follows: 1. Substrate Preparation: First, the substrate (such as a silicon wafer) is cleaned and pretreated to ensure a clean surface suitable for subsequent coating. 2. Photoresist Coating: Next, a layer of photoresist (commonly known as photoresist) is applied to the substrate surface and baked to remove the solvent and conform the photoresist to the substrate surface. 3. Exposure: The photoresist-coated substrate is exposed using a mask and a photolithography machine. The transparent areas on the mask allow light to pass through, impinging on the photoresist and inducing a photochemical reaction. 4. Development: The exposed substrate is treated with a developer solution, which dissolves the photoresist in the unexposed areas, leaving behind a photoresist film with the desired pattern that serves as a temporary mask. 5. Metal Deposition: The desired metal layer is deposited on the remaining photoresist pattern using physical vapor deposition (PVD) methods such as evaporation or sputtering. Metal deposition only occurs in the open areas of the photoresist, and no metal is deposited in the areas covered by the photoresist. 6. Metal stripping: The most critical step is to remove the photoresist. At this stage, the substrate is immersed in a solvent, and the photoresist and the metal layer attached to it are stripped off together. Since the photoresist forms an "undercut" structure at the edge of the substrate, this allows the metal layer to be lifted from the substrate as a whole, leaving only the metal pattern on the substrate that was originally covered by the photoresist. 7. Post-processing: Finally, post-processing steps such as cleaning and drying may be required to remove all residues and prepare the device for the next step of processing.

[0063] The advantage of the metal lift-off process is that it can achieve high-precision metal patterns, which is suitable for the preparation of complex and high-density circuit patterns. The metal lift-off process requires precise control of photoresist thickness, metal deposition amount and development conditions to ensure an effective lift-off process.

[0064] However, as micro- and nanofabrication demands increasingly higher precision in terms of size and morphology, traditional metal lift-off processes are often limited by size, making it difficult to achieve nanoscale structure lift-off. Furthermore, existing metal lift-off methods face numerous challenges in nanoscale applications, such as uneven lift-off and difficulty controlling the lift-off position.

[0065] Especially during the stripping process, the unwanted metal located above the photoresist cannot be completely removed when removing the photoresist, thus causing metal adhesion problems.

[0066] This application proposes a method for manufacturing a semiconductor structure, referring to Figure 1-6 as well as Figure 8 As shown, the semiconductor structure manufacturing method includes:

[0067] Step S1: Reference Figure 1 As shown, a substrate layer 100 is provided;

[0068] Step S2: Reference Figure 2 As shown, a photoresist layer 200 is coated on the substrate layer 100;

[0069] Step S3: Reference Figure 3 and Figure 4 As shown, a portion of the photoresist layer 200 is removed to form a glue column 210, and a side surface of the glue column 210 has a concave structure 220;

[0070] Step S4: Reference Figure 5 As shown, a functional layer 300 is deposited on the side of the substrate layer 100 close to the glue pillar 210, including a first functional unit 310 located on the substrate layer 100 and a second functional unit 320 located on the glue pillar 210; the first functional unit 310 and the second functional unit 320 are separated at the side of the photoresist layer 200;

[0071] Step S5: Reference Figure 6 As shown, the glue column 210 and the second functional unit 320 are removed.

[0072] It should be noted that the functional layer 300 here can be a metal layer, and the metal layer located on the glue column 210 and the metal layer located on the substrate layer 100 will not adhere to each other under the action of the recessed structure 220. In addition, the functional layer 300 can also be other film layers, such as a flat layer, an isolation layer, etc., which are not limited in this application. The distance above the width of the glue column 210 is greater than or equal to 0.4μm and less than or equal to 1μm. Within this range, the glue column 210 can facilitate the production of the recessed structure 220. For example, the distance above the width of the glue column 210 is 0.4μm, 0.5μm, 0.6μm, 0.7μm, 0.8μm, 0.9μm, and 1.0μm. In addition, the ratio of the maximum depth of the recessed structure 220 to the glue column 210 is greater than or equal to one-fifth and less than or equal to one-half. Within this range, the glue column 210 can well achieve the supporting separation effect. For example, the ratio of the maximum depth of the recessed structure 220 to the maximum depth of the glue column 210 may be one-fifth, one-quarter, one-third, or one-half.

[0073] refer to Figure 4 and Figure 5As shown, since the side of the glue column 210 has a recessed structure 220, when the functional layer 300 is deposited on the side of the substrate layer 100 close to the glue column 210, the first functional unit 310 located on the substrate layer 100 and the second functional unit 320 located on the glue column 210 are blocked by the recessed structure 220 and are therefore not easily adhered to each other, resulting in the subsequent removal of the glue column 210 and the second functional unit 320. The second functional unit 320 can be removed more cleanly, thereby obtaining a semiconductor structure with better performance.

[0074] In this embodiment, reference Figure 9 As shown, step S3: removing part of the photoresist layer 200 to form a glue column 210, wherein the steps of forming a concave structure 220 on the side of the glue column 210 include:

[0075] Step S31: Reference Figure 3 As shown, a light source is used to expose the photoresist through a mask 400.

[0076] Step S32: Reference Figure 4 As shown, the corresponding portion of the photoresist layer 200 is removed to form a glue column 210 having a recessed structure 220;

[0077] When the photoresist layer 200 is exposed using a light source, the photoresist layer 200 is exposed to incident light from the light source and reflected light reflected from the substrate layer 100. At least part of the incident light and the reflected light intersect, and the optical phase difference between the incident light and the reflected light is set to an odd multiple. It should be noted that based on the above setting, an optical standing wave effect can be generated. That is, during the photolithography process, when laser light or ultraviolet light is irradiated onto the substrate layer 100 through the photoresist, part of the light is reflected back by the substrate layer 100 and interferes with the incident light. This interference forms a stable intensity distribution, i.e., a standing wave. Within the photoresist layer 200, these standing waves cause periodic changes in the exposure intensity in the vertical direction, forming constructive (overexposed) and destructive (underexposed) regions. This results in the glue pillar 210 being irradiated by a waveform laser. Therefore, when the corresponding portion of the photoresist layer 200 is removed, the side of the glue pillar 210 can be provided with a recessed structure 220.

[0078] In this embodiment, reference Figure 7 and Figure 10As shown, after providing a substrate layer 100 and before coating a photoresist layer 200 on the substrate layer 100, step S6 is added: a reflective coating 500 is provided on the substrate layer 100 to increase the reflectivity of the substrate layer 100. It should be noted that the reflective coating 500 here can be a metal reflective coating material, such as silver (Ag), aluminum (Al), and gold (Au). These metals have high light reflectivity, especially in the visible light range. In addition, metal oxides such as titanium oxide (TiO2), silicon oxide (SiO2), and aluminum oxide (Al2O3) can also be used. The reflective coating 500 can be removed after the photoresist is exposed to light through the mask 400 using a light source.

[0079] If the reflectivity of the substrate layer 100 increases, it means that more light is reflected back into the photoresist layer, i.e., more reflected light, which will lead to a more significant interference effect. As a result, the recessed structure 220 is more distinct, making it less likely for the first functional unit 310 located on the substrate layer 100 and the second functional unit 320 located on the glue pillar 210 to adhere to each other.

[0080] In this embodiment, the light source can be configured as a monochromatic light source and / or a narrowband light source. Because the wavelengths of monochromatic or narrowband light sources are single or similar, the interference pattern produced when they interfere is purer and clearer. In addition, a monochromatic light source emits light of a nearly single wavelength, while a narrowband light source emits light within a narrow wavelength range. This means that the light waves generated by these light sources have good coherence, i.e., they can maintain a stable phase relationship. As a result, the use of a monochromatic and / or narrowband light source can produce a more pronounced interference phenomenon. This, in turn, leads to a more pronounced optical standing wave effect, resulting in a more complete recessed structure 220.

[0081] In this embodiment, the reflectivity of the substrate layer 100 is set to a first reflectivity, and the reflectivity of the photoresist layer 200 is set to a second reflectivity; and the first reflectivity and the second reflectivity are set to be different.

[0082] When light enters another medium from one medium, if the refractive indices of the two media are different, some of the light will be reflected back at the interface. During the photolithography process, light first passes through the photoresist layer 200 and then reaches the substrate layer 100. Due to the difference in refractive index between the substrate layer 100 and the photoresist layer 200, the incident light will be reflected at the interface of the two layers of material. These reflected lights interfere with the light that continues to pass through and is reflected back from the substrate layer 100 or the air interface. This increases the occurrence of the optical standing wave effect. Here, in order to obtain different first and second reflectivities, a substrate layer 100 material with high reflectivity can be selected, such as an untreated silicon wafer or a substrate with certain metal coatings. This can enhance the reflection of light at the photoresist layer 200 / substrate layer 100 interface, thereby exacerbating the standing wave effect.

[0083] In one embodiment, the ratio of the thickness of the glue pillar 210 to the thickness of the functional layer 300 is set to be less than or equal to 6 and greater than or equal to 3. This thickness setting, combined with the recessed structure 220 on the side of the glue pillar 210, can substantially prevent adhesion between the first functional unit 310 located on the substrate layer 100 and the second functional unit 320 located on the glue pillar 210, thereby achieving a semiconductor structure with better performance. For example, the ratio of the thickness of the glue pillar 210 to the thickness of the functional layer 300 is set to 3, 4, 5, or 6.

[0084] In one embodiment, the ratio of the maximum depth of the recessed structure 220 to the thickness of the functional layer 300 is set to be greater than or equal to 0.5 and less than or equal to 3. Figure 5 As shown, as long as the ratio of the maximum depth of the recessed structure 220 to the thickness of the functional layer 300 is greater than 0.5, and the recessed structure 220 is provided on the side of the glue pillar 210, the first functional unit 310 located on the substrate layer 100 and the second functional unit 320 located on the glue pillar 210 are less likely to adhere to each other, thereby improving the performance of the resulting semiconductor structure. For example, the ratio of the maximum depth of the recessed structure 220 to the thickness of the functional layer 300 can be set to 0.5, 1, 1.5, 2, 2.5, or 3.

[0085] In one embodiment, removing the glue column 210 and the second functional unit 320 includes:

[0086] Step S51: soaking the substrate layer 100 and the photoresist layer 200 in acetone;

[0087] Step S52: performing ultrasonic treatment on the substrate layer 100 and the photoresist layer 200;

[0088] Step S53: heating the substrate layer 100 and the photoresist layer 200;

[0089] Step S54 : cleaning the substrate layer 100 and the photoresist layer 200 to remove the glue pillars 210 and the second functional units 320 .

[0090] Based on the above setting, since the side of the glue column 210 has a recessed structure 220, the first functional unit 310 located on the substrate layer 100 and the second functional unit 320 located on the glue column 210 are less likely to adhere to each other. Therefore, the above cleaning process is adopted. The cleaning process has fewer steps and the process is simple, and can be cleaned cleanly, thereby saving manufacturing time and cost.

[0091] The present application also proposes a semiconductor structure, which is manufactured by the semiconductor structure manufacturing method described in the above embodiment; the semiconductor structure includes a functional layer 300, the functional layer 300 includes a protruding structure 330, and the protruding structure 330 matches the recessed structure 220.

[0092] Since the functional layer 300 has the protruding structure 330 , compared with the functional layer 300 of the same width, the protruding structure 330 has a gap, thus saving more materials than the functional layer 300 of the same width, thereby reducing the material consumption of the functional layer 300 .

[0093] It should be noted that the technical solutions or technical features described in the above embodiments can be combined or supplemented with each other without conflict. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the accompanying drawings; all modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of this application shall be included in the scope of protection of this application.

Claims

1. A method for manufacturing a semiconductor structure, characterized in that: The semiconductor structure manufacturing method comprises: providing a substrate layer; coating a photoresist layer on the substrate layer; Removing part of the photoresist layer to form a resin column, wherein the side of the resin column has a concave structure; A functional layer is deposited on a side of the substrate layer close to the glue pillar, comprising a first functional unit located on the substrate layer and a second functional unit located on the glue pillar; the first functional unit and the second functional unit are separated at a side of the photoresist layer, and an outer wall of the first functional unit is arranged in contact with an inner wall of the recessed structure so that the first functional unit and the second functional unit are broken at the recessed structure; the recessed structure comprises an upper portion and a lower portion, and along a thickness direction, the upper portion is farther away from the substrate layer than the lower portion; the first functional unit and the second functional unit are broken at the upper portion, and the outer wall of the first functional unit is in contact with the lower portion, and the first functional unit comprises a protruding structure, and the protruding structure matches the structure of the lower portion; The glue column and the second functional unit are removed.

2. The method for manufacturing a semiconductor structure according to claim 1, wherein: The step of removing part of the photoresist layer to form a resin column, wherein the side of the resin column has a concave structure comprises: Using a light source to expose the photoresist layer through a mask, Removing a corresponding portion of the photoresist layer to form a glue column having a concave structure; When the photoresist layer is exposed using a light source, the photoresist layer is exposed by the incident light of the light source and the reflected light reflected from the substrate layer, at least part of the incident light and the reflected light intersect, and the light wave phase difference between the incident light and the reflected light is set to an odd number of times.

3. The method for manufacturing a semiconductor structure according to claim 2, wherein: After providing the substrate layer and before coating the photoresist layer on the substrate layer, a reflective coating is arranged on the substrate layer to increase the reflectivity of the substrate layer.

4. The method for manufacturing a semiconductor structure according to claim 2, wherein: The light source is a monochromatic light source and / or a narrow-band light source.

5. The method for manufacturing a semiconductor structure according to claim 2, wherein: The reflectivity of the substrate layer is a first reflectivity, and the reflectivity of the photoresist layer is a second reflectivity; The first reflectivity and the second reflectivity are different.

6. The method for manufacturing a semiconductor structure according to claim 1, wherein: The ratio of the thickness of the glue column to the thickness of the functional layer is less than or equal to 6 and greater than or equal to 3; and / or, The ratio of the maximum depth of the recessed structure to the thickness of the functional layer is greater than or equal to 0.5 and less than or equal to 3.

7. The method for manufacturing a semiconductor structure according to claim 1, wherein: The distance above the width of the glue column is greater than or equal to 0.4 μm and less than or equal to 1 μm.

8. The method for manufacturing a semiconductor structure according to claim 6, wherein: The ratio of the maximum depth of the recessed structure to the glue column is greater than or equal to one-fifth and less than or equal to one-half.

9. The method for manufacturing a semiconductor structure according to claim 1, wherein: Removing the glue column and the second functional unit includes: soaking the substrate layer and the photoresist layer with acetone; performing ultrasonic treatment on the substrate layer and the photoresist layer; heating the substrate layer and the photoresist layer; The substrate layer and the photoresist layer are cleaned to remove the glue column and the second functional unit.

10. A semiconductor structure, characterized in that The semiconductor structure is manufactured by the semiconductor structure manufacturing method according to any one of claims 1 to 9; The semiconductor structure includes a functional layer, the functional layer includes a protruding structure, and the protruding structure matches the concave structure.

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