A two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics
Through the multi-layer dielectric substrate and adhesive layer lamination structure combined with the microstrip line and parasitic metal strip structure, the surface current is excited to form a specific radiation pattern, which solves the problem of two-dimensional ultra-wide-angle beam in the existing technology of wide-beam scanning phased array antenna. The problem of difficulty in maintaining low profile and low cross-polarization during scanning is achieved by achieving the characteristics of wide beam and low cross-polarization.
Patent Information
- Application Number
- CN202411357935.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-27
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2044-09-27
AI Technical Summary
The existing wide-beam scan phased array antennas are difficult to maintain low profile, low cost, low complexity and low cross-polarization characteristics while achieving two-dimensional ultra-wide-angle beam scanning.
The multi -layer medium substrate and the bonding layer overlap structure are adopted, combined with the micro -band line structure and parasitic metal strip structure, and a specific radiation direction diagram is formed by motivating surface currents to achieve the characteristics of wide wave beams and low cross polarization.
It realizes the function of two-dimensional ultra-wide-angle beam scanning, while reducing the profile height and complexity of the antenna, maintaining low cross-polarization and low side-lobe level performance.
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Figure CN118867697B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of antenna technology, and in particular to a two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low-profile, wide-beam and low cross-polarization characteristics. Background Art
[0002] In recent years, phased arrays have been widely used in modern wireless communication technologies, sensor systems, and satellite applications due to their flexible continuous beam scanning capabilities and high gain characteristics. Wide-angle scanning phased arrays are one of the hot spots and difficulties in research. They can achieve large-range scanning in the azimuth and elevation planes, meet the requirements of large communication coverage in communication systems, and track low-elevation targets in radar systems. At the same time, as the application of wide-angle scanning phased arrays in the above systems tends to occupy smaller space and scalability, wide-angle scanning phased arrays are also facing additional requirements such as low profile, low cost, planar structure, low complexity, and easy integration. In addition, it has become an urgent need for wide-angle scanning phased arrays to have low cross-polarization and low sidelobe levels (SLLs) performance within a large scanning angle range.
[0003] Common wide beam scanning phased array antennas mainly use pattern reconfigurable technology, directly increase the beam width of antenna units, and tightly coupled arrays. Pattern reconfigurable arrays use a large number of active elements and bias circuits to control the radiation pattern of each antenna unit, which greatly increases the system cost and volume. In order to achieve wide-angle beam scanning performance, tightly coupled arrays usually require additional wide-angle impedance matching layers, which will cause the antenna profile to be too high, and complex multi-layer arrays will also bring high manufacturing costs. Traditional microstrip patch phased arrays are generally considered to be one of the most popular phased arrays due to their inherent advantages such as small size, light weight, easy manufacturing, anti-back radiation interference, and easy integration with active circuits. However, due to the narrow beam width of microstrip patch elements, the maximum beam scanning range of microstrip patch phased arrays is usually limited to ±50°. Therefore, the research and development of two-dimensional ultra-wide-angle beam scanning planar phased array antennas with low-profile wide beam and low cross-polarization characteristics is of great significance. Summary of the invention
[0004] The purpose of the present invention is to provide a two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics, so as to realize the function of two-dimensional ultra-wide-angle beam scanning while reducing the profile and having the characteristics of low cross-polarization.
[0005] In order to achieve the above object, the present invention provides the following technical solutions:
[0006] A two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low-profile, wide-beam and low cross-polarization characteristics, comprising a plurality of antenna units arranged in an array, wherein a single antenna unit is formed by sequentially bonding and stacking a first dielectric substrate, a second dielectric substrate, a third dielectric substrate and a fourth dielectric substrate from bottom to top through an adhesive layer, wherein:
[0007] A first metal layer is provided on the lower surface of the first dielectric substrate, the first metal layer adopts a microstrip line structure, and the microstrip line structure is a linear metal pattern;
[0008] A second metal layer is provided on the lower surface of the second dielectric substrate, and a slit groove is provided on the second metal layer;
[0009] A third metal layer is provided on the upper surface of the third dielectric substrate, the third metal layer adopts a parasitic metal strip structure, and the parasitic metal strip structure is composed of two long strip metal patterns; an open metallized through hole is provided on the third dielectric substrate, and the open metallized through hole is conductively connected to the parasitic metal strip structure;
[0010] A fourth metal layer as a radiation metal layer is provided on the upper surface of the fourth dielectric substrate. A grounding metallized through hole is provided on the fourth dielectric substrate. The grounding metallized through hole vertically penetrates the fourth dielectric substrate, the third dielectric substrate and the second dielectric substrate and is conductively connected to the second metal layer.
[0011] Furthermore, two grounding metallized through holes are provided, and their positions are mirror-symmetrical with respect to the center of the fourth metal layer.
[0012] Furthermore, the two long strip metal patterns of the parasitic metal strip structure are symmetrical about the center of the antenna unit, and each long strip metal pattern is connected to two open metallized through holes.
[0013] Furthermore, the fourth metal layer is a square metal patch, and the center of the patch coincides with the center of the antenna unit.
[0014] Furthermore, the slot groove on the second metal layer is arranged in a vertical relationship with the microstrip line structure.
[0015] Furthermore, the first metal layer, the second metal layer, the third metal layer and the fourth metal layer are all made of aluminum.
[0016] Furthermore, the dielectric constant of the first dielectric substrate is 2.2, and the loss tangent is 0.0009; the dielectric constants of the second dielectric substrate, the third dielectric substrate, and the fourth dielectric substrate are 3.5, and the loss tangent is 0.003.
[0017] Furthermore, the dielectric constant of the adhesive layer is 3.58, and the loss tangent is 0.0033.
[0018] Furthermore, a plurality of screw mounting holes are provided around the array antenna.
[0019] Compared with the prior art, the present invention has the following advantages or beneficial effects:
[0020] 1. The parasitic metal strip structure and the open metallized via are placed under the fourth metal layer. By exciting the surface current on the parasitic metal strip and the open metallized via, an "∞"-shaped end-fire radiation pattern is formed. Combined with the "0"-shaped side-fire pattern of the fourth metal layer, the antenna unit has a significant improvement in the E-plane beam width compared to the traditional microstrip patch antenna unit. At the same time, in the array scenario, coupling current will also be excited between two adjacent parasitic metal strips along the H-plane, thereby expanding the beam width of the H-plane.
[0021] 2. The main radiating part of the antenna is a microstrip patch antenna, which maintains its advantages of low profile and simple structure; in addition, the antenna uses a planar parasitic metal strip structure and an open metallized through-hole equivalent to a pair of vertical reverse current sources instead of using traditional vertical metal walls, which greatly reduces the profile height and complexity of the antenna and is conducive to integration with active circuits.
[0022] 3. The antenna array uses wide-beam low cross-polarization units to achieve two-dimensional ultra-wide-angle beam scanning, achieving beam coverage close to the upper half of the space with high polarization purity. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0024] Figure 1 It is a schematic diagram of the overall structure of a two-dimensional ultra-wide-angle beam scanning plane phased array and unit with low-profile wide-beam and low cross-polarization characteristics according to an embodiment of the present invention;
[0025] Figure 2 for Figure 1 A side view of the antenna unit structure in the embodiment;
[0026] Figure 3 for Figure 1 A structural diagram of the upper surface of the fourth dielectric substrate in the embodiment;
[0027] Figure 4 for Figure 1 A structural diagram of the upper surface of the third dielectric substrate in the embodiment;
[0028] Figure 5 for Figure 1 A structural diagram of the lower surface of the first dielectric substrate in the embodiment;
[0029] Figure 6 for Figure 1 A top view of the array structure in the embodiment;
[0030] Figure 7 for Figure 1 Back view of the array structure in the embodiment;
[0031] Figure 8 The reflection coefficient of the embodiment of the present invention is simulated and tested in the working frequency band;
[0032] Fig. 9 To simulate and test the E-plane active unit radiation pattern of the antenna unit of the embodiment of the present invention at a frequency of 10.7 GHz;
[0033] Fig.10 To simulate and test the H-plane active unit radiation pattern of the antenna unit of the embodiment of the present invention at a frequency of 10.7 GHz;
[0034] Fig.11 It is a maximum gain diagram of the simulation and test of the embodiment of the present invention in the working frequency band;
[0035] Fig.12 and Fig.13 To simulate and test the E-plane main polarization and cross-polarization beam scanning patterns of the embodiment of the present invention at 10.7 GHz frequency;
[0036] Fig.14 and Fig.15 To simulate and test the H-plane main polarization and cross-polarization beam scanning patterns of the embodiment of the present invention at a frequency of 10.7 GHz;
[0037] In the figure, 1, microstrip line structure, 2, first dielectric substrate, 3, first bonding layer, 4, second metal layer, 5, second dielectric substrate, 6, second bonding layer, 7, third dielectric substrate, 8, parasitic metal strip structure, 9, third bonding layer, 10, fourth dielectric substrate, 11, fourth metal layer, 12, grounding metallized through hole, 13, open metallized through hole, 14, slot, 15, screw mounting hole. DETAILED DESCRIPTION
[0038] The following is an explanation of the implementation of the present application by means of specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification.
[0039] In the following description, reference is made to the accompanying drawings, which describe several embodiments of the present application. It should be understood that other embodiments may also be used, and changes in composition and operation may be made without departing from the spirit of the present invention. The following detailed description should not be considered restrictive, and the scope of the embodiments of the present application is limited only by the claims of the patent of the present application. The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present application.
[0040] Although the terms first, second, etc. are used to describe various elements in some examples, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. The technical means disclosed in the scheme of the present invention are not limited to the technical means disclosed in the following embodiments, but also include technical solutions composed of any combination of the following technical features.
[0041] Furthermore, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context indicates otherwise. It should be further understood that the terms "comprise", "include", "include" indicate the presence of the described features, steps, operations, elements, components, items, types, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, types, and / or groups.
[0042] Please refer to Figure 1 and Figure 2 The present embodiment provides a two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics, comprising a plurality of antenna units arranged in an array, wherein a single antenna unit is formed by sequentially bonding and stacking a first dielectric substrate 2, a second dielectric substrate 5, a third dielectric substrate 7 and a fourth dielectric substrate 10 from bottom to top through an adhesive layer. Specifically:
[0043] The first dielectric substrate 2 and the second dielectric substrate 5 are bonded and overlapped by a first adhesive layer 3 , the second dielectric substrate 5 and the third dielectric substrate 7 are bonded and overlapped by a second adhesive layer 6 , and the third dielectric substrate 7 and the fourth dielectric substrate 10 are bonded and overlapped by a third adhesive layer 9 .
[0044] A first metal layer is disposed on the lower surface of the first dielectric substrate 2 . The first metal layer adopts a microstrip line structure 1 . The microstrip line structure 1 is a linear metal pattern.
[0045] A second metal layer 4 is provided on the lower surface of the second dielectric substrate 5, and a slot groove 14 is provided on the second metal layer 4. The slot groove 14 is arranged in a vertical relationship with the microstrip line structure 1. The electromagnetic wave is coupled to the slot groove 14 through the microstrip line structure 1, and is coupled from the bottom microstrip line through the slot groove to the parasitic metal strip structure and the fourth metal layer above, and radiates to the free space.
[0046] A third metal layer is provided on the upper surface of the third dielectric substrate 7. The third metal layer adopts a parasitic metal strip structure 8. The parasitic metal strip structure 8 is composed of two long strip metal patterns. Each long strip metal pattern is respectively connected to two open metalized through holes 13. The open metalized through holes 13 vertically penetrate the third dielectric substrate 7. The open metalized through holes 13 are conductively connected to the parasitic metal strip structure 8. Preferably, the two long strip metal patterns of the parasitic metal strip structure 8 are symmetrically arranged around the center of the antenna unit; the two open metalized through holes 13 are symmetrically arranged around the center of the long strip metal pattern.
[0047] A fourth metal layer 11 as a radiation metal layer is provided on the upper surface of the fourth dielectric substrate 10, and a grounding metallized through hole 12 is provided on the fourth dielectric substrate 10. The grounding metallized through hole 12 vertically penetrates the fourth dielectric substrate 10, the third adhesive layer 9, the third dielectric substrate 7, the second adhesive layer 6 and the second dielectric substrate 5, and is conductively connected to the second metal layer 4. Preferably, the grounding metallized through hole 12 is arranged mirror-symmetrically with respect to the center of the fourth metal layer 11.
[0048] It is further explained that the parasitic metal strip structure 8 and the open metallized through-hole 13 are placed below the fourth metal layer 11, which can excite the surface current on the parasitic metal strip structure 8 and the open metallized through-hole 13, so that the parasitic metal strip structure 8 and the open metallized through-hole 13 are equivalent to a pair of vertical reverse current sources, forming an "∞"-shaped end-fire radiation pattern, which is combined with the "0"-shaped side-fire radiation pattern of the fourth metal layer 11, so that the antenna unit has a significant improvement in the E-plane beam width compared with the traditional microstrip patch antenna unit; at the same time, in the array scenario, coupling current will also be excited between two adjacent parasitic metal strips along the H-plane, which will expand the beam width of the H-plane.
[0049] It is further explained that the fourth metal layer, as the main radiation part of the antenna, adopts a microstrip patch antenna, which maintains its advantages of low profile and simple structure. In addition, the antenna uses planar parasitic metal strips and through holes to be equivalent to a pair of vertical reverse current sources instead of using traditional vertical metal walls, which greatly reduces the profile height and complexity of the antenna and is conducive to integration with active circuits.
[0050] The antenna provided in this embodiment comprises, from bottom to top, a microstrip line structure 1, a first dielectric substrate 2, a first bonding layer 3, a second metal layer 4, a second dielectric substrate 5, a second bonding layer 6, a third dielectric substrate 7, a parasitic metal strip structure 8, a third bonding layer 9, a fourth dielectric substrate 10 and a fourth metal layer 11. The materials of the microstrip line structure 1, the second metal layer 4 and the parasitic metal strip structure 8 are all aluminum 6061. The material of the first dielectric substrate 2 is SYTECH SJ9220, with a dielectric constant of 2.2 and a loss tangent of 0.0009. The material of the second dielectric substrate 5 is SYTECH SJ9036, with a dielectric constant of 3.5 and a loss tangent of 0.003. The material of the third dielectric substrate 7 is SYTECH SJ9036, with a dielectric constant of 3.5 and a loss tangent of 0.003. The material of the fourth dielectric substrate 10 is SYTECH SJ9036, with a dielectric constant of 3.5 and a loss tangent of 0.003. The material of the first adhesive layer 3, the second adhesive layer 6 and the third adhesive layer 9 is SYTECH SJ936B, with a dielectric constant of 3.58 and a loss tangent of 0.0033. 28 screw mounting holes 15 are provided around the array antenna to facilitate the assembly of the various parts using M4 metal screws.
[0051] By using the materials, dielectric constants and loss angle parameters provided in the above embodiment, the size of the prepared array antenna is 468.5 mm * 252.5 mm * 3 mm, and the reflection coefficient, directivity and gain of the antenna are tested using a Ceyear 3671G vector network analyzer and a microwave darkroom. Figure 8 This is the reflection coefficient of the antenna simulated and tested in the working frequency band. The -10 dB impedance bandwidth of the antenna tested is 0.5 GHz (10.4 GHz ~ 10.9 GHz), and the relative bandwidth is 4.7%. Fig. 9 To simulate and test the E-plane active unit radiation pattern of the antenna unit at 10.7 GHz of the embodiment of the present invention, in the E-plane active unit radiation pattern obtained by the antenna test, the 4 dB beam width is 228°. Fig.10 To simulate and test the H-plane active unit radiation pattern of the antenna unit at 10.7 GHz of the embodiment of the present invention, in the H-plane active unit radiation pattern obtained by the antenna test, the 4 dB beam width is 154°. Fig.11 This is a maximum gain diagram of the simulation and test of the embodiment of the present invention in the working frequency band. In the entire working frequency band, the maximum gain of the antenna test exceeds 30.5dBi. Fig.12 and Fig.13To simulate and test the E-plane main polarization and cross-polarization beam scanning patterns of the embodiment of the present invention at a frequency of 10.7 GHz, the E-plane beam scanning range obtained by the antenna array test is ±80°, the cross polarization is less than -27dB, and the first sidelobe level is less than -9.7dB. Fig.14 and Fig.15 To simulate and test the H-plane main polarization and cross-polarization beam scanning patterns of the embodiment of the present invention at a frequency of 10.7 GHz, the E-plane beam scanning range obtained by the antenna array test is ±75°, the cross polarization is less than -27dB, and the first sidelobe level is less than -9.1dB.
[0052] The test results show that compared with similar antennas reported at home and abroad, this antenna array has the ability of two-dimensional ultra-wide-angle beam scanning with a wide unit beam width and low cross-polarization level, while having the advantages of lower profile height and easy integration with the back-end system.
[0053] The above embodiments are only illustrative of the principles and effects of the present application, and are not intended to limit the present application. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.
Claims
1. A two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics, characterized in that: It comprises a plurality of antenna units arranged in an array, wherein a single antenna unit is formed by sequentially bonding and stacking a first dielectric substrate (2), a second dielectric substrate (5), a third dielectric substrate (7) and a fourth dielectric substrate (10) from bottom to top through an adhesive layer, wherein: A first metal layer is provided on the lower surface of the first dielectric substrate (2), the first metal layer adopts a microstrip line structure (1), and the microstrip line structure is a linear metal pattern; A second metal layer (4) is provided on the lower surface of the second dielectric substrate (5); a slot groove (14) is provided on the second metal layer (4); the slot groove (14) on the second metal layer (4) is arranged in a vertical relationship with the microstrip line structure (1); A third metal layer is provided on the upper surface of the third dielectric substrate (7), the third metal layer adopts a parasitic metal strip structure (8), and the parasitic metal strip structure (8) is composed of two long strip metal patterns; an open metallized through hole (13) is provided on the third dielectric substrate (7), and the open metallized through hole (13) is conductively connected to the parasitic metal strip structure (8); A fourth metal layer (11) serving as a radiation metal layer is provided on the upper surface of the fourth dielectric substrate (10), and a grounding metallized through hole (12) is provided on the fourth dielectric substrate (10). The grounding metallized through hole (12) vertically penetrates the fourth dielectric substrate (10), the third dielectric substrate (7) and the second dielectric substrate (5), and is conductively connected to the second metal layer (4).
2. The two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics according to claim 1, characterized in that: Two grounding metallized through holes (12) are provided, and their positions are mirror-symmetrical with respect to the center of the fourth metal layer (11).
3. The two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics according to claim 1, characterized in that: The two long strip metal patterns of the parasitic metal strip structure (8) are symmetrical about the center of the antenna unit, and each long strip metal pattern is respectively connected to two open-circuit metallized through holes (13).
4. The two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics according to claim 1, characterized in that: The fourth metal layer (11) is a square metal patch, and the center position of the patch coincides with the center of the antenna unit.
5. The two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics according to claim 1, characterized in that: The first metal layer, the second metal layer (4), the third metal layer and the fourth metal layer (11) are all made of aluminum.
6. The two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics according to claim 1, characterized in that: The dielectric constant of the first dielectric substrate (2) is 2.2, and the loss tangent is 0.0009; the dielectric constant of the second dielectric substrate (5), the third dielectric substrate (7) and the fourth dielectric substrate (10) is 3.5, and the loss tangent is 0.
003.
7. The two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics according to claim 1, characterized in that: The dielectric constant of the adhesive layer is 3.58, and the loss tangent is 0.0033.
8. The two-dimensional ultra-wide-angle beam scanning planar phased array antenna with low profile, wide beam and low cross-polarization characteristics according to claim 1, characterized in that: A plurality of screw mounting holes (15) are provided around the array antenna.
Citation Information
Patent Citations
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CN111525255A
Broadband low cross polarization microstrip patch phased-array antenna unit
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