Device and method for rapid non-destructive contactless measurement of internal strain in silicon materials

Abstract

The application provides a device and a method for fast non-destructive non-contact measurement of internal strain of silicon material, comprising: a near-infrared femtosecond laser for generating a near-infrared femtosecond laser pulse; a time-domain stretching assembly connected with the near-infrared femtosecond laser; an optical signal amplification assembly connected with the time-domain stretching assembly; a first spatial dispersion assembly arranged on an outgoing light path of the optical signal amplification assembly; a microscopic objective lens arranged on an outgoing light path of the spatial dispersion assembly; a second spatial dispersion assembly arranged on an outgoing light path of the microscopic objective lens; a high-speed photoelectric detector located on the outgoing light path of the second spatial dispersion assembly; a high-speed oscilloscope electrically connected with the high-speed photoelectric detector; and a data processing device electrically connected with the high-speed oscilloscope and used for processing and calculating an analog electric signal obtained by sampling to obtain internal strain of a sample to be measured. The application is used for solving the problems of strong dependence on speckle and low detection frame number in the prior art.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of photomechanics and deformation measurement, and particularly relates to a measurement method of a silicon internal strain rapid non-destructive non-contact measurement device. BACKGROUND

[0002] At present, the chip size has entered the nanometer era. Due to the reduction of the chip packaging volume and the rise of the total chip power consumption, the heat generated by the chip is easy to gather, causing the temperature of the chip to rise. The chip substrate is often composed of composite materials, and the thermal expansion coefficients of different components are different. Under the temperature change, thermal mismatch will occur in the interior, thereby generating stress and strain, causing warping deformation, and even causing problems such as solder joint failure, chip cracking and delamination. Therefore, the detection of chip strain is attracting more and more attention.

[0003] Due to the small size of the chip, it belongs to microscopic measurement, and the traditional contact strain measurement method based on strain gauges or extensometers cannot meet the needs of this field. At present, the digital image correlation method (Digital Image Correlation, DIC) is a widely used non-contact measurement method in this field. First, speckle points are made on the surface of the sample by spraying, flooding, etching and other methods, and then the speckle images before and after deformation are photographed by using an optical microscope (OM) or a scanning electron microscope (SEM). By comparing the position changes of the speckle points before and after deformation, the strain field distribution of the sample is analyzed and generated.

[0004] However, the traditional strain measurement method has two major limitations: first, the traditional DIC technology is based on the analysis of speckle made on the surface of the sample. By comparing the speckle images before and after deformation, the strain distribution and change of the sample surface are calculated by using an algorithm. The measurement quality is largely dependent on the quality of the speckle production; second, in order to achieve high frame rate high-speed measurement, the traditional DIC technology requires expensive high-speed cameras. The frame rate is limited by the high-speed camera, and the maximum frame rate is in the order of ten thousand frames per second, which is limited by the field of view size and resolution. SUMMARY

[0005] One object of the present application is to provide a silicon internal strain rapid non-destructive non-contact measurement device to solve the problems of strong dependence on speckle and low detection frame number in the prior art.

[0006] To solve the above technical problems, the present application adopts the following technical solutions:

[0007] A silicon internal strain rapid non-destructive non-contact measurement device, comprising:

[0008] A near-infrared femtosecond laser is used to generate near-infrared femtosecond laser pulses sufficient to image through the sample to be measured without damaging the sample to be measured.

[0009] a time domain stretching component connected with the near-infrared femtosecond laser, for time domain stretching the near-infrared femtosecond laser pulse;

[0010] a light signal amplification component connected with the time domain stretching component, for power compensation of the near-infrared femtosecond laser pulse stretched by the time domain stretching component;

[0011] a first spatial dispersion component arranged on an exit light path of the light signal amplification component, for spatially dispersing the exiting near-infrared femtosecond laser pulse into a spatial pulse;

[0012] a microscopic objective arranged on an exit light path of the spatial dispersion component, for focusing the spatial pulse onto the sample to be measured and transmitting the spatial pulse focused onto the sample to be measured;

[0013] a second spatial dispersion component arranged on an exit light path of the microscopic objective, for converging the transmitted light pulse to obtain a point light;

[0014] a high-speed photoelectric detector arranged on the exit light path of the second spatial dispersion component, for converting the transmitted light pulse signal into an analog signal;

[0015] a high-speed oscilloscope electrically connected with the high-speed photoelectric detector, for sampling the analog electrical signal;

[0016] a data processing device electrically connected with the high-speed oscilloscope, for processing and calculating the sampled analog electrical signal to obtain the strain inside the sample to be measured.

[0017] Further, an optical power meter is further included, which is placed between the microscopic objective and the sample to be measured before the test, and is removed from the light path during the test.

[0018] Further, a first lens component and a second lens component are further included, the first lens component is arranged between the first spatial dispersion component and the microscopic objective, wherein the first lens component is used for adjusting the size of the pulse light spot and the angle of the pulse incident to the microscopic objective; the second lens component is arranged between the exit side of the sample to be measured and the second spatial dispersion component, and is used for converging the transmitted pulse onto the second spatial dispersion component.

[0019] Further, the first collimator is arranged between the optical signal amplification assembly and the first spatial dispersion assembly, and is used for making the amplified pulse incident on the first spatial dispersion assembly in the form of specific angle and spatial light; and the second collimator is arranged between the second spatial dispersion assembly and the high-speed photodetector, and is used for coupling the transmitted pulse into the optical path.

[0020] Further, the first spatial dispersion assembly comprises a first acousto-optic deflector and a first diffraction grating arranged in sequence on the exit light path of the optical signal amplification assembly, the first acousto-optic deflector is used for changing the propagation direction of the pulse to realize the change of the incident position and angle of the femtosecond laser on the first diffraction grating, and the first diffraction grating is used for dispersing the near-infrared femtosecond laser pulse into one-dimensional spatial pulse.

[0021] Further, the second spatial dispersion assembly comprises a second diffraction grating and a second acousto-optic deflector arranged in sequence on the exit light path of the microscopic objective, the second diffraction grating is used for restoring the one-dimensional spatial pulse into point light, and the second acousto-optic deflector is used for converting the two-dimensional scanning light beam transmitted through the sample into one-dimensional spatial pulse.

[0022] Further, the microscopic objective comprises a first microscopic objective and a second microscopic objective arranged in sequence on the exit light path of the first spatial dispersion assembly, and the sample to be measured is arranged on the light path between the first microscopic objective and the second microscopic objective.

[0023] Another object of the present application is to provide a measurement method of the device for measuring the internal strain of silicon material without contact and losslessly and rapidly according to the above, comprising the following steps:

[0024] Step 1, cleaning the sample to be measured and fixing it on the light path of the microscopic objective;

[0025] Step 2, starting the near-infrared femtosecond laser to generate a near-infrared femtosecond laser pulse sufficient to image through the sample to be measured without damaging the sample to be measured;

[0026] Step 3, the time-domain stretching assembly performs time-domain stretching on the near-infrared femtosecond pulse, and then the amplified pulse passes through the optical signal amplification assembly, the first spatial dispersion assembly and the microscopic objective to focus on the sample to be measured;

[0027] Step 4, the pulse through the sample under test is sequentially incident on the high-speed photodetector and high-speed oscilloscope through the second spatial dispersion component, and finally transmitted to the data processing device, the data processing device recovers the light pulse signal distribution image sequence transmitted through the sample under test according to the analog electrical signal sampled by the high-speed oscilloscope, and obtains the change of the light intensity distribution image profile boundary of the sample under test before and after the strain according to the light pulse signal distribution image sequence, calculates the strain of each region, and finally calculates the strain inside the sample under test through interpolation.

[0028] Further, the method for obtaining the light intensity distribution image sequence comprises:

[0029] Constructing a two-dimensional light intensity distribution image sequence transmitted through the sample under test, the frame rate of which is equal to the repetition frequency of the near-infrared femtosecond laser, and the formula for converting from the sampled light pulse signal I(x) to the light intensity signal I(x) is as follows: s

[0030]

[0031] Wherein, I R (x) is the reference pulse intensity, T is the component of the high-frequency component of the filtered sampled light pulse signal I(x) after Hilbert transform, and re(T) and im(T) are the real part and imaginary part of T, respectively.

[0032] Further, the method for calculating the internal strain of the sample under test by the data processing device according to the light pulse signal distribution image sequence comprises:

[0033] The non-local mean algorithm is used to filter the light intensity distribution image sequence, and then the binary image is extracted from the above filtered light intensity distribution image sequence, and the eigenvalue and eigenvector method is used to track the distribution of each contour region before and after the strain of the sample under test, and the position coordinate matrix A of each contour region to the boundary of the sample under test is represented as: A=QΛQ, wherein Q is the matrix of the eigenvector, and Λ is the matrix of the eigenvalue.

[0034] The deformation of each contour region before and after the strain is represented as:

[0035]

[0036] In the formula, e i is a unit vector. And represent the transformation matrix of each contour region before and after the strain, respectively; E j is the eigenvalue of the region.

[0037] The deformation tensor is represented as:

[0038] ​

[0039] Strain of each profile region Calculated by the following formula:

[0040]

[0041] Compared with the prior art, the beneficial effects of the present application are: the present application adopts near-infrared light to perform ultrafast laser imaging on the sample to be measured, the imaging frame rate is equivalent to the pulse repetition frequency of the laser, and can reach about MHz, so that the strain of the silicon material can be measured quickly; in addition, due to the penetration of near-infrared light to the silicon material, the image sequence formed by the method of the present application contains the internal structure information of the chip or device to be measured, and after processing the image sequence by the data processing device, the strain change inside the chip or device to be measured can be accurately reflected, so that the obtained strain information is more accurate.

[0042] Compared with the traditional DIC technology of non-contact type, the present application overcomes the difficulty of preparing speckles required by the DIC technology, adopts the image derived from the structural characteristics of the sample chip for calculation and analysis, and does not need to make speckles on the sample, avoiding damage to the surface of the sample; by controlling the power of the laser, the laser of a specific wavelength generated after amplification has a specific power, so that the laser does not damage the sample when passing through the sample and forming the image required for testing, thereby realizing non-contact and non-destructive testing.

[0043] In addition, the present application does not need expensive high-speed cameras, and is not limited by frame rate, field of view size and resolution, and only needs common near-infrared femtosecond lasers and the like to quickly measure the strain change inside the chip or device to be measured, greatly reducing the cost and improving the efficiency of measurement. BRIEF DESCRIPTION OF DRAWINGS

[0044] Figure 1 A structural schematic diagram of a silicon material internal strain rapid non-destructive non-contact measurement device provided for embodiment 1 of the present application. DETAILED DESCRIPTION

[0045] The technical solutions in the embodiments of the present application will be described below in conjunction with the embodiments of the present application, obviously, the described embodiments are only part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor belong to the scope of protection of the present application.

[0046] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0047] The present application will be further described below in conjunction with specific embodiments, but not as a limitation of the present application.

[0048] Example 1:

[0049] Example 1 provides an ultrafast, non-destructive, and non-contact measurement device for the internal strain of silicon materials, such as... Figure 1 As shown, the system includes: a near-infrared femtosecond laser 101, a time-domain stretching component, an optical signal amplification component, a first spatial dispersion component, a microscope objective, a second spatial dispersion component, a high-speed photodetector, a high-speed oscilloscope, and a data processing device. In this embodiment, the time-domain stretching component is a single-mode fiber 102, which is disposed in the output optical path of the near-infrared femtosecond laser 101; the optical signal amplification component is an erbium-doped fiber amplifier 103, which is disposed in the output optical path of the single-mode fiber 102. In order to direct the pulse amplified by the erbium-doped fiber amplifier 103 at a specific angle and in the form of spatial light into the first spatial dispersion component, a first collimator 104 is also disposed in the optical path between the erbium-doped fiber amplifier 103 and the first spatial dispersion component.

[0050] The first spatial dispersion component includes a first acousto-optic deflector 105 and a first diffraction grating 106 sequentially disposed on the output optical path of the first collimator 104. The first acousto-optic deflector 105 is used to change the propagation direction of the near-infrared femtosecond laser pulse to change the incident position and angle of the femtosecond laser on the first diffraction grating 106. The first diffraction grating 106 is used to disperse the near-infrared femtosecond laser pulse into a one-dimensional spatial pulse. In this embodiment, the microscope objective includes a first microscope objective 109 and a second microscope objective 111 sequentially disposed on the output optical path of the first diffraction grating 106. The sample to be tested is disposed on the optical path between the first microscope objective 109 and the second microscope objective 111. In order to ensure that the pulse generated by the near-infrared femtosecond laser 101 has a first power and a first wavelength after being amplified by the erbium-doped fiber amplifier 103, the first power is sufficient to penetrate the sample under test without damaging the sample under test, and the first wavelength is sufficient to form an image with sufficient quality after penetrating the silicon and other polymer components of the sample under test, before the test, an optical power meter 110 is set between the first microscope objective 109 and the sample under test, and after the test starts, the optical power meter 110 is moved out of the optical path.

[0051] In addition, a first lens assembly and a second lens assembly are provided. The first lens assembly includes a first plano-convex lens 107 and a second plano-convex lens 108 sequentially disposed in the optical path between the first spatial dispersion assembly and the microscope objective. The first lens assembly is used to adjust the size of the pulse spot and the angle at which the pulse is incident on the microscope objective. The second lens assembly includes a third plano-convex lens 112 and a fourth plano-convex lens 113 sequentially disposed in the optical path between the second microscope objective and the second spatial dispersion assembly. The second lens assembly is used to converge the transmitted pulse onto the second spatial dispersion assembly.

[0052] The second spatial dispersion assembly comprises a second diffraction grating 114 and a second acousto-optic deflector 115 arranged in sequence on the exit side of the fourth plano-convex lens 113, the second diffraction grating 114 is used to restore the one-dimensional spatial pulse to a point light, and the second acousto-optic deflector 115 is used to convert the two-dimensional scanning light beam transmitted through the sample under test into a one-dimensional spatial pulse. Wherein, the first plano-convex lens 107, the second plano-convex lens 108, the first microscope objective 109, the sample under test, the second microscope objective 111, the third plano-convex lens 112 and the fourth plano-convex lens 113 are located on the same optical axis.

[0053] The high-speed photodetector 117 is arranged on the exit light path of the second acousto-optic deflector 115, and is used to convert the transmitted light pulse signal into an analog signal. In the embodiment, the high-speed photodetector 117 is selected to be a MHz-level and above high-speed free-space photodetector 117. In order to facilitate the coupling of the transmitted pulse into the light path for detection by the high-speed photodetector 117, a second collimator 116 is arranged between the second acousto-optic deflector 115 and the high-speed photodetector 117. A high-speed oscilloscope 118 for sampling the analog electrical signal is electrically connected downstream of the high-speed photodetector 117. In the embodiment, the high-speed oscilloscope is selected to be a MHz-level and above high-speed oscilloscope. A data processing device 119 is electrically connected to the high-speed oscilloscope 118, and is used to restore the light pulse signal distribution image sequence transmitted through the sample under test according to the sampled analog electrical signal; and obtain the change of the light intensity distribution image profile boundary of the object under test before and after the strain occurs, calculate the boundary strain, and calculate the strain inside the sample under test by interpolation. In the embodiment, the data processing device 119 is a computer or other device capable of data processing and calculation.

[0054] Embodiment 2:

[0055] Embodiment 2 provides a method for measuring the internal strain of a silicon material, which is realized by using the device provided in embodiment 1, and mainly includes the following steps:

[0056] Step 1, clean and dry the sample under test using chemical detergent and deionized water, and fix it on the light path between the first microscope objective 109 and the second microscope objective 111;

[0057] Step 2, set the optical power meter 110 in the light path between the first objective lens 109 and the sample to be tested before the test, adjust the near-infrared femtosecond laser 101 and the erbium-doped fiber amplifier 103, so that the femtosecond laser pulse generated by the near-infrared femtosecond laser 101 has a first power and a first wavelength after being amplified by the erbium-doped fiber amplifier 103, the first power is sufficient to penetrate the sample to be tested without damaging the sample to be tested, and the first wavelength is sufficient to form an image with sufficient quality after penetrating the silicon and other polymer components of the sample to be tested; remove the optical power meter 110 from the light path after the test, keep the pulse power and wavelength of the emitted and amplified pulses of the near-infrared femtosecond laser 101 and the erbium-doped fiber amplifier 103 unchanged;

[0058] Step 3, time domain stretching of the near-infrared femtosecond laser pulse is performed through the single-mode optical fiber 102, and the time domain stretched pulse is incident on the first acousto-optic deflector 105 in the form of spatial light at a specific angle through the first collimator 104; by controlling the acoustic wave driving frequency to change the refractive properties of the crystal inside the acousto-optic deflector, the change of the incident position and angle of the femtosecond laser on the first diffraction grating 106 is realized;

[0059] Step 4, the spatial light incident on the first diffraction grating 106 at different positions and angles is dispersed into one-dimensional spatial pulses, and then focused on different positions on the sample to be tested through the first plano-convex lens 107, the second plano-convex lens 108 and the first objective lens 109, thereby realizing large-range two-dimensional scanning of one-dimensional femtosecond laser on the sample to be tested;

[0060] Step 5, the pulse passing through the sample to be tested is coupled to the MHz-level and above high-speed photodetector 117 through the second objective lens 111, the third plano-convex lens 112, the fourth plano-convex lens 113, the second diffraction grating 114, the second acousto-optic deflector 115 and the second collimator 116 in the reverse angle of incidence, thereby converting the transmitted light pulse signal into an analog signal;

[0061] Step 6, the transmitted pulse is converted into an analog electrical signal after passing through the high-speed photodetector 117, and then sampled onto the computer 119 through the high-speed oscilloscope 118, and the computer 119 analyzes and reconstructs the analog signal sampled by the high-speed oscilloscope 118 to obtain a two-dimensional light intensity distribution sequence, the frame rate of which is equal to the repetition frequency of the near-infrared femtosecond laser, and the conversion formula from the sampled light pulse signal I(x) to the light intensity signal I(x) is as follows: s

[0062]

[0063] Wherein, I R ​(x) is a reference pulse intensity, T is a component of a high frequency component of a sampled light pulse signal I(x) filtered and Hilbert transformed, re(T) and im(T) are respectively a real part and an imaginary part of T.

[0064] To reduce the influence of photoelectric detector noise and oscilloscope measurement noise on the measurement results, the non-local mean algorithm is used to filter the light intensity distribution image sequence obtained from the above formula to clearly define the boundary of each contour region in the image, and the calculation formula of the algorithm is:

[0065] NL[v](i) = å j∈I v(j)w(i,j) (2)

[0066] where NL[v](i) is the image of pixel point i after filtering processing, v(j) is the original image without filtering; I is the neighborhood of pixel point i; w(i,j) represents the similarity between pixel points i and j, and its value is determined by the square value of the Euclidean distance between the search window:

[0067]

[0068] where,

[0069]

[0070] In the formula, h is a smoothing parameter that controls the attenuation degree of the Gaussian function, and the specific value is determined by the image noise level; is a weighted Euclidean distance decay function of pixel point i and pixel point j, and a is the standard deviation of the Gaussian kernel; i is a normalization coefficient.

[0071] After filtering the light intensity distribution image sequence, a binary image is extracted, and the eigenvalue and eigenvector method is used to track the contour region distribution of the object before and after strain. The position coordinate matrix A of each region to the sample boundary can be represented as A = QΛQ, where Q is the matrix of the eigenvector, and Λ is the matrix of the eigenvalue. The deformation of each region before and after strain can be represented as:

[0072]

[0073] In the formula: e i is a unit vector; and represent the transformation matrix of the region before and after strain, respectively; E j is the eigenvalue of the region. Then the deformation tensor can be represented as:

[0074]

[0075] The strain of each region The strain of each region can be calculated by the following formula:

[0076]

[0077] obtaining the strain of each region Then, the node matrix is constituted by the strain of each region, the two-dimensional spline interpolation toolbox is called in MATLAB, and the strain distribution of each place in the measured sample can be obtained by interpolation calculation.

[0078] In Example 2, near-infrared femtosecond laser pulse waves are used as femtosecond-level and can penetrate silicon materials. A diffraction grating and an acousto-optic deflector are used to disperse the spatial pulses on the surface of the measured object to form a two-dimensional scanning spatial pulse, so that the light intensity distribution of the pulse after passing through the measured object can be obtained in a superfast manner. The strain distribution inside the measured object can be calculated by using the algorithm. The whole measurement process is non-contact, and the superfast, non-contact strain measurement of the observed object can be realized. The strain distribution inside the measured object can be measured, and the sampling frequency is as high as 10 6 Hz or above, and the transient strain distribution inside the electronic chip or device can be effectively observed.

[0079] The above is only the preferred embodiment of the present application, and does not limit the implementation and protection scope of the present application. It should be realized by those skilled in the art that any equivalent replacement and obvious change obtained by using the content of the present application should be included in the protection scope of the present application.

Claims

1. A rapid, non-destructive, non-contact device for measuring the internal strain of silicon materials, characterized in that, include: Near-infrared femtosecond lasers are used to generate near-infrared femtosecond laser pulses that are sufficient to image through the sample under test without damaging it. A time-domain stretching component is disposed in the output optical path of a near-infrared femtosecond laser and is used to stretch the near-infrared femtosecond laser pulse in the time domain. An optical signal amplification component is connected to the output optical path of the time-domain stretching component and is used to perform power compensation on the near-infrared femtosecond laser pulse stretched by the time-domain stretching component. The first spatial dispersion component is disposed in the output optical path of the optical signal amplification component and is used to spatially disperse the output near-infrared femtosecond laser pulse into a spatial pulse. The microscope objective lens is disposed in the output light path of the first spatial dispersion component and is used to focus the spatial pulse onto the sample to be tested and transmit the spatial pulse focused onto the sample to be tested. The second spatial dispersion component is disposed in the exit light path of the microscope objective. The second spatial dispersion component is used to converge the light pulses transmitted through the sample to obtain point light. A high-speed photodetector, located in the outgoing light path of the second spatial dispersion component, is used to convert the transmitted light pulse signal into an analog signal; A high-speed oscilloscope, which is electrically connected to the high-speed photodetector, is used to sample analog electrical signals; A data processing device, electrically connected to the high-speed oscilloscope, is used to process and calculate the internal strain of the sampled analog electrical signal to obtain the strain inside the sample under test.

2. The rapid, non-destructive, non-contact measurement device for internal strain of silicon material according to claim 1, characterized in that, It also includes an optical power meter, which is placed between the microscope objective and the sample to be tested before testing, and removed from the optical path during testing.

3. The rapid, non-destructive, non-contact measurement device for internal strain of silicon material according to claim 1, characterized in that, It also includes a first lens assembly and a second lens assembly. The first lens assembly is disposed between the first spatial dispersion assembly and the microscope objective, wherein the first lens assembly is used to adjust the size of the pulse spot and the angle at which the pulse is incident on the microscope objective; the second lens assembly is disposed between the sample exit side and the second spatial dispersion assembly, and the second lens assembly is used to focus the transmitted pulse onto the second spatial dispersion assembly.

4. The rapid, non-destructive, non-contact measurement device for internal strain of silicon material according to claim 1, characterized in that, It also includes a first collimator and a second collimator, wherein the first collimator is located between the optical signal amplification component and the first spatial dispersion component, and the first collimator is used to incident the pulse amplified by the optical signal amplification component onto the first spatial dispersion component at a specific angle and in the form of spatial light; the second collimator is located between the second spatial dispersion component and the high-speed photodetector, and the second collimator is used to couple the transmitted pulse into the optical path.

5. The rapid, non-destructive, non-contact measurement device for internal strain of silicon material according to claim 1, characterized in that, The first spatial dispersion component includes a first acousto-optic deflector and a first diffraction grating sequentially disposed on the outgoing optical path of the optical signal amplification component. The first acousto-optic deflector is used to change the propagation direction of the pulse, and the first diffraction grating is used to disperse the near-infrared femtosecond laser pulse into a one-dimensional spatial pulse.

6. The rapid, non-destructive, non-contact measurement device for internal strain of silicon material according to claim 1, characterized in that, The second spatial dispersion component includes a second diffraction grating and a second acousto-optic deflector sequentially disposed on the outgoing light path of the microscope objective. The second diffraction grating is used to restore a one-dimensional spatial pulse to a point light, and the second acousto-optic deflector is used to convert a two-dimensional scanning beam transmitted through the sample into a one-dimensional spatial pulse.

7. The rapid, non-destructive, non-contact measurement device for internal strain of silicon material according to claim 1, characterized in that, The microscope objective includes a first microscope objective and a second microscope objective sequentially disposed on the outgoing light path of the first spatial dispersion component, with the sample to be tested located on the light path between the first microscope objective and the second microscope objective.

8. A method for measuring the internal strain of silicon material using a rapid, non-destructive, non-contact measuring device according to any one of claims 1-7, characterized in that, Includes the following steps: Step 1: Clean the sample to be tested and fix it in the optical path of the microscope objective; Step 2: Activate the near-infrared femtosecond laser to generate near-infrared femtosecond laser pulses that are sufficient to image the sample under test without damaging it. Step 3: The near-infrared femtosecond pulse is stretched in the time domain by the time domain stretching component, amplified by the optical signal amplification component, and then focused onto the sample to be tested by the first spatial dispersion component and the microscope objective. Step 4: The pulses passing through the sample under test are sequentially incident on the high-speed photodetector and the high-speed oscilloscope through the second spatial dispersion component, and finally transmitted to the data processing device. The data processing device recovers the distribution image sequence of the light pulse signal transmitted through the sample under test based on the analog electrical signal sampled by the high-speed oscilloscope, and obtains the change of the light intensity distribution image contour region before and after the strain of the sample under test based on the light pulse signal distribution image sequence, calculates the strain of each region, and finally calculates the strain inside the sample under test through interpolation.

9. The measurement method of the rapid, non-destructive, non-contact measurement device for internal strain of silicon material according to claim 8, characterized in that, Methods for obtaining light intensity distribution image sequences include: A sequence of two-dimensional light intensity distribution images transmitted through the sample is constructed, with a frame rate equal to the repetition frequency of the near-infrared femtosecond laser, from the sampled light pulse signal I(x) to the light intensity signal I. s The formula for transforming (x) is as follows: Among them, I R (x) represents the reference pulse intensity, T represents the high-frequency component of the sampled optical pulse signal I(x) after filtering and Hilbert transform, and re(T) and im(T) represent the real and imaginary parts of T, respectively.

10. The measurement method of the rapid, non-destructive, non-contact measurement device for internal strain of silicon material according to claim 8, characterized in that, The data processing device calculates the internal strain of the sample under test based on the image sequence of light pulse signal distribution, including: The light intensity distribution image sequence is filtered using a nonlocal mean algorithm. Then, a binarized image is extracted from the filtered light intensity distribution image sequence. The distribution of each contour region of the sample before and after strain is tracked using the eigenvalue and eigenvector method. The position coordinate matrix A of each region of the sample boundary is represented as: A = QΛQ, where Q is the matrix of eigenvectors and Λ is the matrix of eigenvalues. The deformation of each region before and after strain is expressed as follows: In the formula: e i It is a unit vector; and E represents the transformation matrix of each contour region before and after strain; j The characteristic value of the region; Then the deformation tensor Represented as: Strain in each region It is calculated by the following formula:

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