A high-performance submillimeter wave generation and transmission system-on-chip integrated chip and preparation method

Abstract

The present invention discloses a high-performance submillimeter wave generation and transmission system-on-chip integrated chip and a preparation method, wherein the system-on-chip integrated chip includes a laser, a passive waveguide, a unidirectional carrier detector and a wave topological photonic crystal submillimeter wave waveguide integrated on a substrate; the topological photonic crystal submillimeter wave waveguide is obtained by splicing two photonic crystal plates with periodically arranged circular air hole arrays and forming a topological boundary state; the two single-mode laser beams generated by the laser are transmitted to the passive waveguide and coupled by a multimode interference coupler and transmitted to the unidirectional carrier detector, and the coupled laser is used to generate submillimeter waves through beat frequency in the unidirectional carrier detector and transmitted to the topological photonic crystal submillimeter wave guide, and the submillimeter wave is transmitted without backscattering through the topological boundary state. The present invention can provide a broadband, low-loss, highly integrated, compact, and highly efficient submillimeter wave source to achieve high-performance submillimeter wave generation and transmission.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a high-performance submillimeter wave generation and transmission system-on-chip integrated chip and a preparation method thereof. Background Art

[0002] In the process of continuous development of integrated circuit technology, silicon-based microelectronic circuit integration has shown remarkable results, but it also faces significant challenges and limitations. With the rapid growth of data processing volume, traditional silicon-based microelectronic circuit integration has encountered bottlenecks in data transmission bandwidth and power loss. Seeking new integration methods has become the key to the development of the industry.

[0003] Among the many solutions, wafer bonding technology, as an important method for early integration of different materials, can integrate different materials on the same chip, giving full play to the physical, chemical and electrical properties of various materials, thus breaking the limitations of a single material. Key technologies in wafer bonding technology, such as basic processes such as cleaning, mirror polishing and surface flatness, are also constantly being optimized. These processes can ensure the cleanliness and flatness of the wafer surface and provide ideal conditions for bonding between different materials. In this context, introducing optics into microelectronic circuits, especially silicon photonics technology, is a very promising integration method. Current research results have shown great potential and broad application prospects.

[0004] Against the backdrop of the rapid growth of global Internet bandwidth demand, especially driven by the popularity of applications such as AIGC, higher requirements are placed on the transmission rate of wireless communications. Higher data rates require correspondingly larger transmission bandwidths, and the corresponding carrier frequencies are also higher. In order to meet this demand, submillimeter wave band communication technology has emerged. Submillimeter wave band communication technology with a carrier frequency greater than 300GHz represents the next frontier of wireless communication technology. It can provide a bandwidth greater than 50GHz, which is an order of magnitude higher than the existing millimeter wave communication bandwidth. This makes submillimeter wave communication technology have significant advantages in high-speed data transmission, large-capacity data transmission, and low-latency communication. The submillimeter wave band is located between millimeter waves and far-infrared light in the electromagnetic spectrum (30μm-3mm). In the next generation of wireless communication systems after 5G, submillimeter wave communication technology has become an important direction for the development of wireless communication technology due to its high bandwidth and high directivity. In addition, submillimeter waves have very important research value and broad application prospects in physics, chemistry, life sciences, medical imaging, security inspection, product testing, high-frequency wireless communications and other application fields.

[0005] However, the technology for generating submillimeter wave radiation still faces many challenges. At present, the generation of submillimeter waves is mainly achieved through electronic methods and photonic methods. Although electronic methods can generate submillimeter waves, they are often accompanied by problems such as large size, high energy consumption, high price and complex maintenance; and although photonic methods have high flexibility, large equipment solutions such as optical pumping methods also have limitations such as inability to continuously tune, low electro-optical efficiency, large size and weight, making it difficult to achieve miniaturization and portability. Therefore, the development of efficient, reliable and compact submillimeter wave generation technology is of great significance to promoting the practical application and industrialization of submillimeter wave communication technology. Summary of the invention

[0006] In view of the above, the purpose of the present invention is to provide a high-performance submillimeter wave generation and transmission system-on-chip integrated chip and a preparation method, aiming to achieve a submillimeter wave source with wide bandwidth, low loss, high integration, compact structure and high conversion efficiency, so as to meet the urgent demand for high-performance submillimeter wave sources in future wireless communications and related application fields.

[0007] In order to achieve the above-mentioned invention object, the technical solution provided by the present invention is as follows:

[0008] An embodiment of the present invention provides a high-performance submillimeter wave generation and transmission system-on-chip integrated chip, wherein the system-on-chip integrated chip includes a laser, a passive waveguide, a unidirectional carrier detector, and a topological photonic crystal submillimeter wave waveguide integrated on a substrate;

[0009] The topological photonic crystal submillimeter waveguide is obtained by splicing two photonic crystal slabs with periodically arranged circular air hole arrays to form a topological boundary state between the photonic crystal slabs;

[0010] The two single-mode laser beams generated by the laser are transmitted to the passive waveguide, in which the two single-mode laser beams are coupled by a multimode interference coupler and then transmitted to the unidirectional carrier detector. In the unidirectional carrier detector, the coupled lasers are used to generate submillimeter waves through beat frequency and transmitted to the topological photonic crystal submillimeter waveguide. In the waveguide topological photonic crystal submillimeter waveguide, backscattering-free transmission is achieved through topological boundary states.

[0011] Circular air holes of different radii are provided on each photonic crystal plate, and the circular air holes are arranged in a periodic array and present opposite topological characteristics on the two photonic crystal plates. Several periods of air holes are removed at the input and output ends of the splicing to form line defects, ensuring the maximum mode overlap between the topological boundary state, the line defect mode and the submillimeter wave fundamental mode. The mismatch between the fundamental mode and the topological boundary state mode is reduced through the line defect mode, thereby improving the coupling efficiency of the submillimeter wave at the input end of the topological photonic crystal submillimeter wave waveguide, enabling the submillimeter wave to achieve backscatter-free transmission at the boundary based on the topological protection characteristics, reducing the loss of the on-chip integrated system.

[0012] Preferably, the laser is a III-V laser. Since silicon is an indirect bandgap and cannot emit light as a light source, a semiconductor chip-level III-V laser is used, which is small in size and a direct bandgap material and can be used as a light source.

[0013] Preferably, the passive waveguide is a silicon-based passive waveguide, and its material includes silicon, silicon nitride or silicon dioxide.

[0014] Preferably, the multimode interference coupler is a silicon-based multimode interference coupler, and its material includes silicon, silicon nitride or silicon dioxide.

[0015] Preferably, in a passive waveguide, one of the two single-mode laser beams is loaded with a modulation signal as a communication carrier, and the other single-mode laser beam is not modulated as a local oscillator light. The frequency difference between the beat frequency communication carrier and the local oscillator light falls in the submillimeter wave band and maintains coherence.

[0016] Preferably, the laser, unidirectional carrier detector and topological photonic crystal submillimeter waveguide are heterogeneously bonded on the substrate, wherein the heterogeneous bonding method includes grain-to-wafer bonding or transfer printing, and the passive waveguide and multimode interference coupler are etched on the substrate.

[0017] Preferably, the unidirectional carrier detector uses a T-type bias circuit and a coplanar waveguide conversion structure to achieve waveguide output of the generated submillimeter wave transmission.

[0018] Preferably, the input and output ends of the topological photonic crystal submillimeter wave waveguide have tapered end face couplers, which can be combined with the line defect design that forms a topological boundary between the photonic crystal slabs to achieve effective group refractive index buffering, making it easy to convert the mode distribution between the boundary state and the waveguide mode, thereby significantly improving the coupling efficiency of the submillimeter wave.

[0019] To achieve the above-mentioned purpose of the invention, an embodiment of the present invention further provides a method for preparing the high-performance submillimeter wave generation and transmission system-on-chip integrated chip as described above, comprising the following steps:

[0020] Processing a silicon wafer to form a passive waveguide consisting of a silicon dioxide layer covering a silicon nitride waveguide layer;

[0021] etching the dielectric stack down to the substrate to open a recessed region for heterobonding;

[0022] Heterojunction bonding of a laser and a unidirectional carrier detector on a substrate;

[0023] In the topological photonic crystal submillimeter waveguide, a periodic air hole structure is produced by photolithography, and an air bridge is produced under the waveguide by etching, making the entire waveguide appear to be suspended.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] (1) The present invention integrates a laser, a passive waveguide, a unidirectional carrier detector (UTC-PD) and a topological photonic crystal submillimeter wave waveguide on a single chip. By integrating different materials on a single chip at the same time and utilizing the advantages of different materials, the bottlenecks such as data transmission bandwidth and power loss are broken. The design structure is compact, the volume is small, and the conversion efficiency is high. It can achieve low-loss beat frequency generation of submillimeter waves, low-loss coupling of submillimeter waves between UTC-PD and topological photonic crystal submillimeter waveguide, and near-lossless transmission of submillimeter waves.

[0026] (2) The present invention can achieve frequency tuning of submillimeter waves by adjusting the frequency difference of two single-mode laser beams generated by the laser, generate and continuously radiate submillimeter waves of specific frequencies through the UTC-PD beat frequency principle, and transmit submillimeter waves through low-loss free-space coupling between UTC-PD and topological photonic crystal submillimeter waveguides and near-lossless transmission of submillimeter waves characterized by quantum valley Hall (QVH) topological insulators. The wavelength and bandwidth of the output submillimeter waves can be controlled through the energy band design of the photonic crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0028] Figure 1 is a top view of a high-performance submillimeter wave generation and transmission system-on-chip integrated chip provided by an embodiment of the present invention;

[0029] Figure 2 It is a side view of a high-performance submillimeter wave generation and transmission system-on-chip integrated chip provided by an embodiment of the present invention;

[0030] Figure 3 It is a schematic diagram of the structure of a photonic crystal rhombus periodic unit provided by an embodiment of the present invention;

[0031] Figure 4 It is a schematic diagram of a method for preparing a high-performance submillimeter wave generation and transmission system-on-chip integrated chip provided by an embodiment of the present invention;

[0032] Figure 5 It is a schematic diagram of a control method for generating and transmitting submillimeter waves by a high-performance submillimeter wave generation and transmission system-on-chip integrated chip provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific implementation methods described herein are only used to explain the present invention and do not limit the scope of protection of the present invention. It should be noted that, in the absence of conflict, the features in the following embodiments and implementation methods can be combined with each other.

[0034] The inventive concept of the present invention is: in the context of integrated circuit technology facing bottlenecks and silicon photonics technology and submillimeter wave communication technology developing rapidly, in view of the problems of submillimeter wave generation and transmission methods in the prior art such as large size, high energy consumption, high price, cumbersome equipment maintenance, inability to achieve continuous tuning, low electro-optical efficiency, large size and weight, etc., the embodiment of the present invention provides a high-performance submillimeter wave generation and transmission system-on-chip integrated chip and a preparation method, by integrating a laser, a low-loss passive waveguide, a unidirectional carrier detector and a low-loss topological photonic crystal submillimeter wave waveguide on a photonic integrated chip to form an ultra-high coupling efficiency submillimeter wave generation and transmission system-on-chip, which fully utilizes the advantages of low-loss optical transmission in the 1550nm band, the advantages of ultra-high-speed unidirectional carrier detectors of the III-V material system, and the almost lossless submillimeter wave waveguide transmission advantages of the photonic crystal topological structure, thereby achieving ultra-high transmission bandwidth and ultra-low transmission loss of submillimeter waves, and providing a new chip-level solution for submillimeter wave sources.

[0035] Figure 1 It is a top view of a high-performance submillimeter wave generation and transmission system-on-chip integrated chip provided by an embodiment of the present invention. Figure 2 FIG. 1 is a side view of a high-performance submillimeter wave generation and transmission system-on-chip integrated chip provided by an embodiment of the present invention. Figure 1 and Figure 2 As shown, the embodiment provides a high-performance submillimeter wave generation and transmission system-on-chip integrated chip, including a laser, a passive waveguide, a unidirectional carrier detector (UTC-PD) and a topological photonic crystal submillimeter wave waveguide integrated on a substrate. It is highly integrated and compact in structure, and can achieve low-loss beat frequency generation of submillimeter waves. At the same time, the submillimeter waves can be introduced from the UTC-PD into the waveguide topological photonic crystal submillimeter wave waveguide with low loss, which is convenient for subsequent applications.

[0036] Among them, the laser uses two III-V group lasers (laser 1 and laser 2) to generate two single-mode lasers in the 1550nm band. Through the grating structure with periodic changes in the refractive index in the grating layer in the laser cavity, all gain-amplified modes in the gain cavity are screened, and optical feedback is provided to the gain cavity, and finally a single longitudinal mode, high-power, high-side mode suppression ratio laser is output. At the same time, the laser can be directly modulated at high speed, which is convenient for subsequent application in optical communication systems. Modulation is performed on one laser, and a modulated signal containing communication information is carried as a communication carrier, and the other is not modulated as a local oscillator light. The submillimeter wave obtained by the two laser beams (communication carrier and local oscillator light) at the UTC-PD beat frequency is the modulated signal carrying the communication information.

[0037] The passive waveguide is used to transmit two single-mode laser beams at the same time, and the two single-mode laser beams are coupled through a multimode interference coupler and transmitted to the UTC-PD. The passive waveguide adopts a silicon-based passive waveguide, and its material includes silicon, silicon nitride or silicon dioxide. Compared with the waveguide of the III-V material system to which the UTC-PD device belongs, it has the advantage of very low loss. In the embodiment, the passive waveguide adopts a SiN waveguide, and a conical spot size converter (SSC) is designed at the emitter end of the SiN waveguide, which can realize spot adjustment, improve spatial coupling efficiency, and output coupled laser.

[0038] The UTC-PD of the III-V group is used to generate submillimeter waves through the beat frequency principle. The principle of beat frequency generation of submillimeter waves is that when the frequency of two beams is f 1 and f 2 When the laser is input to the UTC-PD, due to the limitation of response speed, the photoconductive switch mixer or photodetector can only respond to the frequency of |f 1 -f 2 | responds to the optical beat frequency signal, such as |f 1 -f 2 |In submillimeter waves, the device will generate carriers at this frequency and accelerate them under the action of an external electric field, and continuously radiate submillimeter waves of this frequency through an antenna or waveguide. By adjusting the frequency difference of the dual III-V lasers, the submillimeter wave can be tuned.

[0039] An important performance indicator of a waveguide is its propagation loss, which is closely related to the geometry and material properties of the waveguide. Due to the shorter wavelength in the submillimeter wave range, waveguides made of metals are associated with significant Ohmic losses, and dielectric materials are preferred over metals. However, due to the dielectric absorption of submillimeter waves, waveguides made of dielectric materials are also associated with losses. In contrast, high-resistivity Si exhibits low losses and has always been the preferred material for efficient submillimeter wave waveguides. Topological photonic crystals based on quantum valley Hall (QVH) constructed on high-resistivity Si can be used for submillimeter wave transmission. Unlike ordinary photonic crystals derived from Bragg reflection, QVH topological photonic crystals can produce band gaps at energy level degeneracy points due to the destruction of the inversion symmetry of the system, thereby forming topologically protected boundary states, making the transmission of light immune to backscattering and manufacturing defects and improving the integration and robustness of the system. Compared with other planar all-silicon dielectric waveguides such as traditional photonic crystal waveguides, topological photonic crystal submillimeter waveguides have lower transmission losses and communication rates, which are crucial for integrated chips. In the embodiment, a topological photonic crystal submillimeter wave waveguide is designed at the front end, and a submillimeter wave tapered end face coupling structure is designed at the front end, and a line defect is introduced thereafter to realize an effective group refractive index buffer, so that the mode distribution between the boundary state and the waveguide mode is easy to convert, and the coupling efficiency is significantly improved. For a system with broken spatial inversion symmetry, a QVH topological insulator can be constructed between photonic crystal units with different topological states to form a topological photonic crystal submillimeter waveguide, which has ultra-high robustness and backscatter-free transmission, and the operating wavelength is completely positively correlated with the unit period size.

[0040] Specifically, the method for designing a topological photonic crystal submillimeter wave waveguide includes: the photonic crystal plates at both ends of the waveguide are respectively arranged by photonic crystal periodic unit structures with different topological characteristics (opposite valley Chern numbers), and their boundaries support quantum valley Hall (QVH) topologically protected boundary states, which can achieve backscatter-free transmission. By designing the structural dimensions of the circular air holes on the photonic crystal plate, the band structure of the periodic unit (including the width of the band gap, the frequency range, and the topological characteristics) can be changed, which directly affects the gating frequency of the conduction band at the boundary. Therefore, a flexible structural design can be performed to achieve control of the output submillimeter wave center wavelength and bandwidth. Figure 3 As shown, the photonic crystal unit uses a diamond period as the smallest unit, and circular air holes with different radii are engraved on it (type A). By reversing the position distribution of the circular air holes in the unit, the corresponding photonic crystal unit with different topological characteristics (with opposite valley number) is obtained (type B). Under the premise of ensuring the correspondence between the body and the edge, the photonic crystal slabs composed of the periodically arranged photonic crystal units and the reversed photonic crystal units are spliced ​​to construct a topological photonic crystal submillimeter waveguide. Further, as Figure 1As shown, by removing a row of air holes within 2.5 cycles at the input and output ends of the topological photonic crystal submillimeter waveguide to form line defects, an effective group refractive index buffer can be formed between the straight waveguide and the topological boundary state waveguide, which is beneficial to reduce the mode mismatch caused by interface changes during submillimeter wave transmission, and ensure the maximum mode overlap between the topological boundary state, the line defect mode and the submillimeter wave fundamental mode. Due to the topological protection characteristics, the submillimeter wave can be transmitted without backscattering at the boundary between the two, and the output of the UTC-PD is transmitted to the chip end of the integrated chip in a nearly lossless manner. The 2.5-cycle line defect in this embodiment has the highest coupling efficiency on a 50-cycle topological photonic crystal waveguide through simulation verification. In other embodiments, the number of cycles removed needs to be determined based on the parametric scanning simulation results of the actual number of cycles (length) of the photonic crystal submillimeter waveguide.

[0041] The silicon-based substrate includes a common silicon wafer or a silicon-on-insulator (SOI) layer.

[0042] In summary, a high-performance submillimeter wave generation and transmission system-on-chip integrated chip has a compact design structure of each part, a small size, and a high conversion efficiency. It can achieve low-loss beat frequency generation of submillimeter waves and near-lossless transmission of submillimeter waves, and can achieve frequency tuning of submillimeter waves and control of output submillimeter wave wavelength and bandwidth, thereby meeting the urgent needs of future wireless communications and related application fields for high-performance submillimeter wave sources. The efficient, reliable and compact submillimeter wave generation and transmission scheme provided by the present invention is of great significance for promoting the practical application and industrialization of submillimeter wave communication technology, and is helpful to further promote the development and application of submillimeter wave communication technology.

[0043] Based on the same inventive concept, the embodiment of the present invention also provides a method for preparing a high-performance submillimeter wave generation and transmission system-on-chip integrated chip, such as Figure 4 As shown, the following steps are included:

[0044] First, a silicon wafer is processed to form a passive waveguide consisting of a silicon dioxide layer covering a silicon nitride waveguide layer;

[0045] The dielectric stack is then etched down to the silicon substrate to open up the recessed area where the III-V laser and III-V unidirectional carrier detector will be bonded.

[0046] Then, the III-V laser and the III-V unidirectional carrier detector are bonded to the silicon substrate, such as Figure 2 As shown, the active region of the III-V laser, the silicon nitride waveguide layer of the edgeless waveguide, and the absorption layer of the UTC-PD are placed on the same horizontal plane, which is beneficial to spatial coupling;

[0047] Finally, a periodic hole structure was created in the topological photonic crystal submillimeter waveguide structure through a photolithography process, and an air bridge was created under the waveguide through a xenon difluoride etching process, so that the entire waveguide appears to be suspended and forms a larger refractive index contrast, which is better for confining the light field.

[0048] like Figure 5 The figure shows a schematic diagram of a control method for generating and transmitting submillimeter waves by using a high-performance submillimeter wave generation and transmission system-on-chip integrated chip provided by an embodiment of the present invention, which mainly includes:

[0049] The left and right sides of the laser are cleavage planes. The laser resonant cavity is realized through the refractive index difference of the interface (air and medium). The right side of the active area is the light output point of the laser. After the laser is electrically pumped, the two lasers will each generate a beam of single-mode laser. The two single-mode laser beams are incident on the silicon nitride waveguide layer of the passive waveguide through the air gap, and then merged into one beam on the right side of the multimode interference coupler after passing through the SiN waveguide. Two lasers with similar wavelengths will be emitted simultaneously and incident on the absorption layer of the UTC-PD through the air gap. They are converted into submillimeter waves through the beat frequency principle, and then enter the topological photonic crystal submillimeter waveguide through the conversion structure from coplanar waveguide to rectangular waveguide. Finally, the submillimeter wave is output on the right side of the topological photonic crystal submillimeter waveguide for easy application.

[0050] The specific implementation methods described above provide a detailed description of the technical solutions and beneficial effects of the present invention. It should be understood that the above is only the most preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, supplements and equivalent substitutions made within the scope of the principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A high-performance submillimeter wave generation and transmission system-on-chip integrated chip, characterized in that: The system-on-chip integrated chip includes a laser, a passive waveguide, a unidirectional carrier detector and a topological photonic crystal submillimeter waveguide integrated on a substrate; The topological photonic crystal submillimeter wave waveguide is obtained by splicing two photonic crystal plates on which a periodically arranged circular air hole array is provided, so as to form a topological boundary state between the photonic crystal plates, wherein circular air holes of different radii are provided on each photonic crystal plate, and the circular air holes are arranged in a periodic array and present opposite topological characteristics on the two photonic crystal plates, and a number of periodic air holes are removed at the input and output ends of the splicing to form a line defect, so as to ensure the maximum mode overlap between the topological boundary state, the line defect mode and the fundamental mode of the electromagnetic wave of the submillimeter wave; The two single-mode laser beams generated by the laser are transmitted to the passive waveguide, in which the two single-mode laser beams are coupled by a multimode interference coupler and then transmitted to the unidirectional carrier detector, in which the coupled lasers are used to generate submillimeter waves through beat frequency and transmitted to the topological photonic crystal submillimeter waveguide, in which the backscattering-free transmission of submillimeter waves is realized through topological boundary states.

2. The high-performance submillimeter wave generation and transmission system-on-chip integrated chip according to claim 1, characterized in that: The laser is a III-V group laser.

3. The high-performance submillimeter wave generation and transmission system-on-chip integrated chip according to claim 1, characterized in that: The passive waveguide adopts a silicon-based passive waveguide.

4. The high-performance submillimeter wave generation and transmission system-on-chip integrated chip according to claim 1, characterized in that: The multimode interference coupler adopts a silicon-based multimode interference coupler.

5. The high-performance submillimeter wave generation and transmission system-on-chip integrated chip according to claim 1, characterized in that: In the passive waveguide, one of the two single-mode laser beams is loaded with a modulated signal as a communication carrier, and the other single-mode laser beam is not modulated as a local oscillator light. The frequency difference between the beat frequency communication carrier and the local oscillator light falls in the submillimeter wave band and maintains coherence.

6. The high-performance submillimeter wave generation and transmission system-on-chip integrated chip according to claim 1, characterized in that: Lasers, unidirectional carrier detectors and topological photonic crystal submillimeter waveguides are heterogeneously bonded to the substrate, including die-to-wafer bonding or transfer, and passive waveguides and multimode interference couplers are etched on the substrate.

7. The high-performance submillimeter wave generation and transmission system-on-chip integrated chip according to claim 1, characterized in that: The unidirectional carrier detector uses a T-type bias circuit and a coplanar waveguide conversion structure to achieve waveguide output for the transmission of the generated submillimeter waves.

8. The high-performance submillimeter wave generation and transmission system-on-chip integrated chip according to claim 1, characterized in that: The input end and the output end of the topological photonic crystal submillimeter wave waveguide are provided with tapered end face couplers.

9. A method for preparing a high-performance submillimeter wave generation and transmission system-on-chip integrated chip as claimed in any one of claims 1 to 8, characterized in that: The following steps are involved: Processing a silicon wafer to form a passive waveguide consisting of a silicon dioxide layer covering a silicon nitride waveguide layer; etching the dielectric stack down to the substrate to open a recessed region for heterobonding; Heterojunction bonding of a laser and a unidirectional carrier detector on a substrate; In the topological photonic crystal submillimeter waveguide, a periodic air hole structure is produced by photolithography, and an air bridge is produced under the waveguide by etching, making the entire waveguide appear to be suspended.

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