Application of Polytelluroxane in Non-Chemical Amplification Photoresist

Abstract

The present invention discloses the application of polytelluroxane in a chemically amplified photoresist. The polytelluroxane has a Te-O chain. The high absorption of the Te element for EUV and the special Te-O main chain are aimed at achieving excellent UV lithography (I-line, KrF, ArF, etc.), electron beam lithography, and EUV lithography performance, especially solving the problem of EUV photoresist that takes into account high sensitivity, high resolution, and low line edge roughness.

Description

Technical Field

[0001] The present invention relates to the technical field of photoresists, and particularly to the application of polytelluroxane in non-chemically amplified photoresists. Background Art

[0002] Lithography technology is the foundation of the semiconductor industry. Its essence is a technology that uses photochemical reactions to generate micro-nano structures. Among them, the photoresist undergoes a solubility transformation upon exposure. After the solubility difference between the exposed part and the unexposed part is developed in a specific organic solvent or aqueous solution, the corresponding micro-nano structure can be obtained. Among them, the photoresist whose exposed part dissolves is called a positive photoresist, and the photoresist whose unexposed part dissolves is called a negative photoresist.

[0003] With the continuous advancement of Moore's law, the demand for continuous miniaturization of feature sizes in integrated circuits has promoted the development of lithography technology. The exposure wavelengths of lithography technology have successively experienced G-line (436 nm), I-line (365 nm), KrF (248 nm), ArF (193 nm), and are gradually developing towards shorter wavelengths. In recent years, extreme ultraviolet (EUV, 13.5 nm) lithography technology has greatly promoted the renewal and iteration of the chip manufacturing industry and has become the most promising nano-scale manufacturing technology. However, the limited power of the EUV light source and the energy loss of the multi-layer mirror system pose high requirements for the sensitivity of the photoresist. In addition, the high-resolution patterning of EUV requires the photoresist material to also have good resolution and line edge roughness. Therefore, developing new photoresists suitable for EUV lithography remains a huge challenge.

[0004] Traditional ultraviolet (UV) lithography generally uses chemically amplified photoresists (CARs), which contain an acid-sensitive polymer matrix and a photoacid generator. For example, in polystyrene-based CARs, the photoacid generator in-situ generates protons upon exposure, which can catalyze the deprotection reaction, thereby releasing a phenol structure that is soluble in alkaline solutions. CARs have been used in extreme ultraviolet light (EUV) lithography, but as the feature size shrinks, their disadvantages become more obvious. CARs are mainly composed of low-period elements, and they have poor absorption of 13.5 nm EUV; at the same time, as the pattern size decreases, the thickness of the photoresist film also decreases, and the problem of poor absorption becomes more significant. In addition, the complex working mechanism and multiple components of CARs mean that the randomness of the position and quantity of each component will lead to significant chemical noise, resulting in rough patterns, unclear structures, size variations, and pattern defects. This requires us to develop more suitable photoresist materials and working modes for EUV lithography.

[0005] In recent years, in order to avoid the above problems, non-chemically amplified resists (non-CARs) have gradually received more attention. For example, polymer-based main-chain scission type resists with good film-forming properties and stability. The principle is that when EUV is absorbed by the resist, secondary electrons are generated. These secondary electrons can cut the polymer main chain, and the cleavage produces small molecules with better solubility, so that the exposed area can be developed and removed. Main-chain scission type resists do not need to introduce photoacid generators, so they have fewer components and less chemical noise, and may reduce line edge roughness. The earliest main-chain scission type resist, and also the earliest resist applied to EUV lithography, is polymethyl methacrylate (PMMA). After exposure, the main-chain C-C bonds or ester bonds in it will break, generating organic small molecules or oligomers. The latter has a larger solubility and is more soluble in the developer. However, since the main-chain scission type resist does not have the assistance of a chemical amplification process and the polymer main-chain bond energy is relatively large, a larger exposure dose is required, which limits its application in high-sensitivity EUV lithography. Therefore, solving the problem of weak EUV absorption of the resist is the key to the development of main-chain scission type resists. Summary of the Invention

[0006] The inventors have found that metal-based EUV resists have emerged in the prior art. These systems generally have higher absorption rates than CARs, but they all belong to negative resists. For specific pattern types, there is still a need for positive resists with high EUV absorption rates.

[0007] In order to solve the above-mentioned related technical problems, the main object of the present invention is to provide a non-chemically amplified resist based on polytelluroxane, utilizing the high absorption of Te element in EUV and the special Te-O main chain, aiming to achieve excellent UV lithography (I-line, KrF, ArF, etc.), electron beam lithography and EUV lithography performance, especially to solve the problem of EUV resists that take into account high sensitivity, high resolution and low line edge roughness.

[0008] In one aspect of the present invention, the present invention proposes the application of polytelluroxane in non-chemically amplified resists. According to an embodiment of the present invention, the polytelluroxane has a Te-O chain. This non-chemically amplified resist utilizes the high absorption of Te element in EUV and the special Te-O main chain, aiming to achieve excellent UV lithography (I-line, KrF, ArF, etc.), electron beam lithography and EUV lithography performance, especially to solve the problem of EUV resists that take into account high sensitivity, high resolution and low line edge roughness.

[0009] According to an embodiment of the present invention, the above application may further include at least one of the following additional technical features:

[0010] According to an embodiment of the present invention, the polytelluroxane is a polymer composed of monomers having the structure shown in formula (V),

[0011]

[0012] wherein, R 1 and R 2 are each independently selected from hydrogen, hydroxyl group, amino group, mercapto group, optionally substituted C 1 -C 20 alkyl group, optionally substituted C 2 -C 20 alkenyl group, optionally substituted C 2 -C 20 alkynyl group, optionally substituted C 1 -C 20 heteroalkyl group, optionally substituted C 2 -C 20 heteroalkenyl group, optionally substituted C 2 -C 20 heteroalkynyl group, optionally substituted aryl group, or has the structure shown in general formula (II),

[0013]

[0014] R 3 is selected from hydroxyl group, amino group, cyano group, optionally substituted aryl group, and x is any integer between 1 and 20;

[0015] or R 1 is connected to R 2 to form a monomer having the structure shown in general formula (VI),

[0016] R 4 is selected from optionally substituted C 1 -C 8 alkyl group, optionally substituted C 2 -C 8 alkenyl group, optionally substituted C 2 -C 8 alkynyl group, optionally substituted C 1 -C 8 heteroalkyl group, optionally substituted C 2 -C 8 heteroalkenyl group, optionally substituted C 2 -C 8 heteroalkynyl group.

[0017] According to an embodiment of the present invention, the polytelluroxane has the structure shown in formula (I):

[0018] n is any integer between 2 and 5000.

[0019] According to an embodiment of the present invention, the polytelluroxane has a structure shown in formula (III):

[0020] n is any integer between 2 and 5000.

[0021] According to an embodiment of the present invention, the polytelluroxane may be a copolymerization product of two or more monomers, that is, R in different repeating units 1 、R 2 also independently selected from the above groups, not necessarily exactly the same. Taking the copolymerized telluroxane of two monomers as an example, according to an embodiment of the present invention, the polytelluroxane has a structure shown in formula (IV):

[0022] Wherein R 1 ’、R 1 ” are independently selected from R 1 ,R 2 ’、R 2 ” are independently selected from R 2 ,m and p are independently any integer between 1 and 5000.

[0023] According to an embodiment of the present invention, the above polytelluroxane structural formulas (I), (III), and (IV) are only schematic diagrams for convenience of explanation and do not limit the protection scope of the present invention. Since the Te-O chain is the core of the performance of the non-chemically amplified photoresist described in the present invention, copolymerizing and blending the Te-O chain structure with other components can also improve the performance of the photoresist. Therefore, for those skilled in the art, the present invention can have various changes, modifications, and improvements based on the above polytelluroxane.

[0024] According to an embodiment of the present invention, R 1 、R 2 are independently selected from optionally substituted C 1 -C 12 alkyl, optionally substituted C 2 -C 12 alkenyl, optionally substituted C 2 -C 12 alkynyl or optionally substituted aryl.

[0025] According to an embodiment of the present invention, R 1 、R 2 are independently selected from optionally substituted C 1 -C 4 alkyl, optionally substituted C 2 -C 4 alkenyl, optionally substituted C 2 -C 4 alkynyl,

[0026] According to an embodiment of the present invention, R 1 , R 2 are each independently selected from optionally substituted C 1 -C 4 alkyl, optionally substituted C 2 -C 4 alkenyl, or optionally substituted C 2 -C 4 alkynyl.

[0027] According to an embodiment of the present invention, R 1 is phenyl, and R 2 is C 1 -C 4 alkyl, C 2 -C 4 alkenyl, or C 2 -C 4 alkynyl.

[0028] According to an embodiment of the present invention, the polytellurane is n is 150.

[0029] According to an embodiment of the present invention, the polytellurane is n is 150.

[0030] According to an embodiment of the present invention, the polytellurane is n is 150.

[0031] According to an embodiment of the present invention, the polytellurane is n is 50.

[0032] According to an embodiment of the present invention, the polytellurane is n is 50.

[0033] According to an embodiment of the present invention, the polytellurane is n is 50.

[0034] According to an embodiment of the present invention, the application is achieved by the following method:

[0035] After cleaning the substrate, a solution of polytellurane is coated on the substrate, the solvent is removed by baking, the substrate is subjected to UV lithography, electron beam lithography, or EUV lithography, and then developed using a developer to obtain a corresponding pattern.

[0036] According to an embodiment of the present invention, the material of the substrate is germanium, silicon, silicon carbide, silicon nitride, gallium arsenide, or gallium nitride.

[0037] According to an embodiment of the present invention, the cleaning of the substrate is carried out by cleaning the substrate with acetone and ultrasonic treatment.

[0038] According to an embodiment of the present invention, the solvent of the solution of the polytelluroxane is one or more mixed solvents selected from ethyl acetate, dichloromethane, chloroform, tetrahydrofuran, 2-hexanone, dimethylformamide, and anisole.

[0039] According to an embodiment of the present invention, the concentration of the solution of the polytelluroxane is 1-50 mg / mL.

[0040] According to an embodiment of the present invention, the concentration of the solution of the polytelluroxane is 6-20 mg / mL.

[0041] According to an embodiment of the present invention, coating the solution of the polytelluroxane on the substrate is carried out by using a spin coating method, and the solution of the polytelluroxane is coated on the substrate by using a spin coater.

[0042] According to an embodiment of the present invention, the rotation speed used in the spin coating method is 2000-5000 rpm, and the time is 20-60 s.

[0043] According to an embodiment of the present invention, the baking temperature is 60-120 °C, and the time is 1-10 minutes.

[0044] According to an embodiment of the present invention, the UV lithography dose is 1-1000 mJ / cm 2 .

[0045] According to an embodiment of the present invention, the electron beam lithography dose is 1-500 μC / cm 2 .

[0046] According to an embodiment of the present invention, the EUV lithography dose is 1-100 mJ / cm 2 .

[0047] According to an embodiment of the present invention, the developer is one or more mixed solvents selected from isopropyl alcohol, ethanol, methanol, and water.

[0048] Another aspect of the present invention provides a patterning process flow and method of the polytelluroxane in UV lithography (I-line, KrF, ArF, etc.), electron beam lithography, and EUV lithography, which can be used to transfer the pattern to the photoresist layer. The specific process flow and method are as follows:

[0049] After cleaning the substrate, coat the solution of the polytelluroxane on the substrate and bake to remove the solvent. Expose the substrate to UV, electron beam, or EUV light at a certain dose, and then perform a developing treatment using a developer to obtain the corresponding pattern.

[0050] According to an embodiment of the present invention, the substrate is cleaned by using acetone and ultrasonic waves.

[0051] According to an embodiment of the present invention, the solvent for the solution of the polytelluroxane is one or a mixture of solvents selected from ethyl acetate, dichloromethane, chloroform, tetrahydrofuran, 2-hexanone, dimethylformamide, and anisole.

[0052] According to an embodiment of the present invention, the concentration of the solution of the polytelluroxane is 1 - 50 mg / mL.

[0053] According to an embodiment of the present invention, the concentration of the solution of the polytelluroxane is 6 - 20 mg / mL.

[0054] According to an embodiment of the present invention, by using the spin-coating method, the polytelluroxane solution is coated on a substrate by a spin coater.

[0055] According to an embodiment of the present invention, the typical rotation speed used in the spin-coating method is 2000 - 5000 rpm, and the time is 20 - 60 s. Other rotation speeds can also be used to prepare films with different thicknesses.

[0056] According to an embodiment of the present invention, the baking temperature is 60 - 120 °C, and the time is 1 - 10 minutes.

[0057] According to an embodiment of the present invention, the dose of the UV lithography (I-line, KrF, ArF, etc.) is 1 - 1000 mJ / cm 2 , the dose of the electron beam lithography is 1 - 500 μC / cm 2 , and the dose of the EUV lithography is 1 - 100 mJ / cm 2 .

[0058] According to an embodiment of the present invention, the developer is one or a mixture of solvents selected from isopropyl alcohol, ethanol, methanol, and water.

[0059] In another aspect of the present invention, the present invention also provides a method for preparing a polytelluroxane:

[0060] Dissolve one or more organic tellurium ethers in an organic solvent, add an aqueous hydrogen peroxide solution and stir, and carry out interfacial oxidative polymerization to obtain a polytelluroxane.

[0061] According to an embodiment of the present invention, the above method may further include at least one of the following additional technical features:

[0062] According to an embodiment of the present invention, the organic tellurium ether has the structure shown in the general formula (X):

[0063] R 1 -Te-R 2 (X), where R 1 , R 2 is the same as defined above;

[0064] According to an embodiment of the present invention, R1 With R 2 May be connected end to end to form a ring, having the structure shown in the general formula (XI):

[0065] Wherein, R 4 Is the same as the above definition.

[0066] According to an embodiment of the present invention, the organic solvent is one or a mixture of more solvents selected from ethyl acetate, dichloromethane, chloroform, and tetrahydrofuran.

[0067] According to an embodiment of the present invention, the concentration of the organotellurium ether in the organic solvent is 0.1 - 2 mol / L.

[0068] According to an embodiment of the present invention, the concentration of the aqueous hydrogen peroxide solution is 0.1 - 5 mol / L.

[0069] According to an embodiment of the present invention, the interfacial oxidative polymerization reaction temperature is 0 - 40 °C, and the reaction time is 0.5 - 7 days.

[0070] According to an embodiment of the present invention, the product is separated by dropping the organic solution of the product into a large amount of methanol for precipitation, and methanol is used as a detergent.

[0071] According to an embodiment of the present invention, an application of a polytellurane provided by the present invention in a chemically amplified photoresist has at least one of the following characteristics and beneficial effects:

[0072] According to an embodiment of the present invention, compared with common chemically amplified photoresist systems, such as PMMA, hydrogenated silsesquioxane HSQ, etc., the chemically amplified photoresist based on polytellurane introduces tellurium elements with strong EUV absorption ability into the system, which theoretically greatly increases the EUV absorption of the material, and thus has higher sensitivity. In addition, polytellurane has two adjustable side chains R 1 and R 2 , and the polymer structure can be optimized according to the needs of the lithography process, so as to obtain more excellent lithography performance. For example, directly introducing a rigid benzene ring onto the Te atom can increase the rigidity of the overall Te - O high molecular weight, and reduce the entanglement between chains, which improves the problem of chain entanglement between the exposed part and the unexposed part in the development process.

[0073] The patterning process flow and method of a polytellurane provided by the present invention in UV lithography (I - line, KrF, ArF, etc.), electron beam lithography, and EUV lithography have at least one of the following characteristics and beneficial effects:

[0074] According to an embodiment of the present invention, the lithography process based on polytelluroxane is simple and easy to operate. Compared with the traditional chemically amplified photoresist system, it does not have complex pre-baking and post-baking process flows, greatly shortening the overall lithography time and reducing the lithography process cost. In addition, the photoresist system based on polytelluroxane can be composed of at least one component, and maintains good molding and film-forming properties of the polymer. Compared with photoresist systems with multiple components such as chemically amplified and metal nanoparticle types, polytelluroxane can more easily obtain a uniform and flat photoresist structure, reducing the generation of random defects. In addition, polytelluroxane is simple to prepare and the raw materials are easy to obtain, so the overall process cost is low and it has the potential for large-scale production applications.

[0075] Term Definitions and Explanations

[0076] Unless otherwise specified, the definitions of groups and terms recorded in the specification and claims of this application, including their definitions as examples, exemplary definitions, preferred definitions, definitions recorded in tables, definitions of specific compounds in examples, etc., can be combined and combined with each other arbitrarily. The group definitions and compound structures after such combination and combination should be understood to be within the scope recorded in the specification and / or claims of this application.

[0077] As used herein, the term "optionally (substituted)" means that the described feature exists or does not exist in these two situations, which means that the subsequent described event can but does not necessarily occur, so it includes two situations where the event occurs or does not occur. For example, "a heterocyclic group optionally substituted by an alkyl group" means that the alkyl group may or may not necessarily be present, so it includes the situation of a heterocyclic group substituted by an alkyl group and a heterocyclic group not substituted by an alkyl group.

[0078] As described herein, the compounds of the present invention may contain "optionally substituted" moieties. Generally speaking, the term "substituted" means that one or more hydrogens of the specified moiety are replaced by a suitable substituent whether or not the term "optionally" is preceded. Unless otherwise indicated, an "optionally substituted" group may have a suitable substituent at each substitutable position of the group, and when multiple positions in any given structure can be substituted by multiple substituents selected from the specified group, the substituents at each position may be the same or different. The combinations of substituents contemplated by the present invention are preferably those that result in stable or chemically viable compounds. As used herein, the term "stable" means that a compound does not undergo substantial change when subjected to conditions that permit its manufacture, detection, and in some embodiments, its recovery, purification, and use for one or more of the purposes disclosed herein.

[0079] Each optional substituent on the substitutable carbon is independently selected from the following monovalent substituents: =O; cyano; C 1-6 alkyl; C 2-6Alkenyl; C 2-6 Alkynyl; halo-C 1-6 Alkyl, C 1-6 Alkoxy; halogen; -(CH 2 ) 0-4 Ro; -(CH 2 ) 0-4 ORo; -O(CH 2 ) 0- 4 Ro; -O-(CH 2 ) 0-4 C(O)ORo; -(CH 2 ) 0-4 CH(ORo) 2 ; -(CH 2 ) 0-4 SRo; -(CH 2 ) 0-4 Ph, which may be substituted by Ro; -(CH 2 ) 0-4 O(CH 2 ) 0-1 Ph, which may be substituted by Ro; -CH=CHPh, which may be substituted by Ro; -(CH 2 ) 0-4 O(CH 2 )0-1-pyridyl, which may be substituted by Ro; -NO 2 ; -CN; -N 3 ; -(CH 2 ) 0-4 N(Ro) 2 ; -(CH 2 ) 0-4 N(Ro)C(O)Ro; -N(Ro)C(S)Ro; -(CH 2 ) 0-4 N(Ro)C(O)NRo 2 ; -N(Ro)C(S)NRo 2 ; -(CH 2 ) 0-4 N(Ro)C(O)-ORo; -N(Ro)N(Ro)C(O)Ro; -N(Ro)N(Ro)C(O)NRo- 2 ; -N(Ro)N(Ro)C(O)ORo; -(CH 2 ) 0-4 C(O)Ro; -C(S)-Ro; -(CH- 2 ) 0-4 C(O)ORo; -(CH 2 ) 0-4 C(O)SRo; -(CH 2 )0-4 C(O)OSiRo 3 ;-(CH 2 ) 0-4 OC(O)Ro;-OC(O)-(CH- 2 ) 0-4 SR-;SC(S)SRo;-(CH 2 ) 0-4 SC(O)Ro;-(CH 2 ) 0-4 C(O)NRo 2 ;-C(S)NRo 2 ;-C(S)SRo;-SC(S)-SRo;-(CH 2 ) 0- 4 OC(O)NRo 2 ;-C(O)N(ORo)Ro;-C(O)C(O)Ro;-C(O)CH 2 C(O)Ro;-C(NORo)Ro;--(CH 2 ) 0-4 SSRo;-(CH 2 ) 0-4 S(O) 2 Ro;-(CH 2 ) 0-4 S(O) 2 ORo;-(CH 2 ) 0-4 OS(O) 2 Ro;-S(O) 2 NRo 2 ;-S(O)-(NRo)Ro;-S(O) 2 NC(NRo 2 ) 2 ;-(CH 2 ) 0-4 S(O)Ro;-N(Ro)S(O) 2 NRo 2 ;-N(Ro)S(O) 2 Ro;-N(ORo)Ro;-C(NH)NRo 2 ;-P(O) 2 Ro;-P(O)Ro 2 ;-OP(O)Ro 2 ;-OP(O)(ORo) 2 ;SiRo 3 ;-(C 1-4 linear or branched alkylene)O-N(Ro) 2 ;or-(C1-4 linear or branched alkylene)C(O)O-N(Ro)2 .

[0080] Each Ro is independently hydrogen, a C1-6 aliphatic group, -CH2Ph, -O(CH2)0-1Ph, -CH2-(5-6 membered heteroaryl ring), or a 5-6 membered saturated, partially unsaturated or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen or sulfur, or regardless of the above definition, two separately occurring Ro together with one or more intervening atoms form a 3-12 membered saturated, partially unsaturated or aryl monocyclic or bicyclic ring having 0-4 heteroatoms independently selected from nitrogen, oxygen or sulfur, which may be substituted at a saturated carbon atom of Ro by a divalent substituent selected from =O and =S; or each Ro is optionally substituted by a monovalent substituent independently selected from the following: halogen, -(CH 2 ) 0-2 R, -(haloR), -(CH 2 ) 0-2 OH, -(CH 2 ) 0-2 OR, -(CH 2 ) 0-2 CH(OR) 2 , -CN, -N 3 , -O(haloR), -(CH 2 ) 0-2 C(O)R, -(CH 2 ) 0-2 C(O)OH, -(CH 2 ) 0-2 C(O)OR, -(CH 2 ) 0-2 SR·, -(CH 2 ) 0-2 SH, -(CH 2 ) 0-2 NH 2 , -(CH 2 ) 0-2 NHR, -(CH 2 ) 0-2 NR 2 , -NO 2 , -SiR 3 , -OSiR 3 , -C(O)SR, -(C 1-4 linear or branched alkylene)C(O)OR or -SSR.

[0081] Each R· is independently selected from a C1-4 aliphatic group, -CH2Ph, -O(CH2)0-1Ph, or a 5-6 membered saturated, partially unsaturated or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen or sulfur, and wherein each R· is unsubstituted or, in the case of being preceded by a halogen group, is substituted only by one or more halogens; or wherein the optional substituent on the saturated carbon is a divalent substituent independently selected from the following: =O, =S, =NNR*2, =NNHC(O)R*, =NNHC(O)OR*, =NNHS(O) 2 R*, =NR*, =NOR*, -O(C(R* 2 )) 2-3 O-, or -S(C(R* 2 )) 2-3 S-, or the divalent substituent attached to the adjacent replaceable carbon of the "optionally substituted" group is -O(CR* 2 ) 2-3 O-, wherein each individually occurring R* is selected from hydrogen, C 1-6 aliphatic group or an unsubstituted 5-6 membered saturated, partially unsaturated or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen or sulfur.

[0082] When R* is a C 1-6 aliphatic group, R* is optionally substituted by: halogen, -R·, -(halogenated R·), -OH, -OR, -O(halogenated R), -CN, -C(O)OH, -C(O)OR·, -NH2, -NHR, -NR2 or -NO2, wherein each R· is independently selected from a C1-4 aliphatic group, -CH2Ph, -O(CH2)0-1Ph, or a 5-6 membered saturated, partially unsaturated or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen or sulfur, and wherein each R· is unsubstituted or, in the case of being preceded by a halogen group, is substituted only by one or more halogens.

[0083] The optional substituent on the nitrogen that can be substituted is independently:

[0084]

[0085] or

[0086] wherein each is independently hydrogen, a C1-6 aliphatic group, an unsubstituted -OPh or an unsubstituted 5-6 membered saturated, partially unsaturated or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen or sulfur, or two individually occurring together with one or more of their inserted atoms form an unsubstituted 3-12 membered saturated, partially unsaturated or aryl monocyclic or bicyclic ring having 0-4 heteroatoms independently selected from nitrogen, oxygen or sulfur; wherein when When it is a C1-6 aliphatic group, optionally substituted with: halogen, -R·, -(haloalkyl R·), -OH, -OR·, -O(haloalkyl R·), -CN, -C(O)OH, -C(O)OR·, -NH2, -NHR·, -NR·2 or -NO2, wherein each R· is independently selected from a C1-4 aliphatic group, -CH2Ph, -O(CH2)0-1Ph or a 5-6 membered saturated, partially unsaturated or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen or sulfur, and wherein each R· is unsubstituted or, in the case of being preceded by a halo group, is substituted only by one or more halogens.

[0087] Unless otherwise specified, the numerical ranges recited in this specification and the claims are equivalent to at least reciting each specific integer value therein. For example, the numerical range "1-12" is equivalent to reciting each integer value in the numerical range "1-12", namely 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12.

[0088] The term "C 1-20 alkyl" should be understood to mean straight-chain and branched-chain alkyl groups having 1 to 20 carbon atoms, "C 1-12 alkyl" means straight-chain and branched-chain alkyl groups having 1, 2, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11 or 12 carbon atoms, "C 1-8 alkyl" means straight-chain and branched-chain alkyl groups having 1, 2, 3, 4, 5, 6, 7 or 8 carbon atoms, "C 1-6 alkyl" means straight-chain and branched-chain alkyl groups having 1, 2, 3, 4, 5 or 6 carbon atoms, "C 1-4 alkyl" means straight-chain and branched-chain alkyl groups having 1, 2, 3 or 4 carbon atoms. The alkyl groups are, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, isopropyl, isobutyl, sec-butyl, tert-butyl, isopentyl, 2-methylbutyl, 1-methylbutyl, 1-ethylpropyl, 1,2-dimethylpropyl, neopentyl, 1,1-dimethylpropyl, 4-methylpentyl, 3-methylpentyl, 2-methylpentyl, 1-methylpentyl, 2-ethylbutyl, 1-ethylbutyl, 3,3-dimethylbutyl, 2,2-dimethylbutyl, 1,1-dimethylbutyl, 2,3-dimethylbutyl, 1,3-dimethylbutyl or 1,2-dimethylbutyl, etc. or their isomers. It can be monovalent (such as CH 3 ), divalent (CH 2 ) or polyvalent (such as sub ).

[0089] The term "C 2-12 alkenyl" should be understood to mean a straight-chain or branched-chain monovalent hydrocarbon group that contains one or more double bonds and has 2 to 12 carbon atoms. "C2-6 "Alkenyl" should be understood to optionally represent a straight-chain or branched monovalent hydrocarbon group that contains one or more double bonds and has 2, 3, 4, 5, or 6 carbon atoms, particularly 2 or 3 carbon atoms ("C 2-3 -alkenyl"), and it should be understood that in the case where the alkenyl contains more than one double bond, the double bonds may be separated from each other or conjugated. The alkenyl is, for example, vinyl, allyl, (E)-2-methylvinyl, (Z)-2-methylvinyl, (E)-but-2-enyl, (Z)-but-2-enyl, (E)-but-1-enyl, (Z)-but-1-enyl, pent-4-enyl, (E)-pent-3-enyl, (Z)-pent-3-enyl, (E)-pent-2-enyl, (Z)-pent-2-enyl, (E)-pent-1-enyl, (Z)-pent-1-enyl, hex-5-enyl, (E)-hex-4-enyl, (Z)-hex-4-enyl, (E)-hex-3-enyl, (Z)-hex-3-enyl, (E)-hex-2-enyl, (Z)-hex-2-enyl, (E)-hex-1-enyl, (Z)-hex-1-enyl, isopropenyl, 2-methylprop-2-enyl, 1-methylprop-2-enyl, 2-methylprop-1-enyl, (E)-1-methylprop-1-enyl, (Z)-1-methylprop-1-enyl, 3-methylbut-3-enyl, 2-methylbut-3-enyl, 1-methylbut-3-enyl, 3-methylbut-2-enyl, (E)-2-methylbut-2-enyl, (Z)-2-methylbut-2-enyl, (E)-1-methylbut-2-enyl, (Z)-1-methylbut-2-enyl, (E)-3-methylbut-1-enyl, (Z)-3-methylbut-1-enyl, (E)-2-methylbut-1-enyl, (Z)-2-methylbut-1-enyl, (E)-1-methylbut-1-enyl, (Z)-1-methylbut-1-enyl, 1,1-dimethylprop-2-enyl, 1-ethylprop-1-enyl, 1-propylvinyl, or 1-isopropylvinyl.

[0090] The term "C 2-12 "Alkynyl" should be understood to represent a straight-chain or branched monovalent hydrocarbon group that contains one or more triple bonds and has 2 to 12 carbon atoms, optionally "C 2 -C 6 -alkynyl". The term "C 2 -C 6 -alkynyl" should be understood to optionally represent a straight-chain or branched monovalent hydrocarbon group that contains one or more triple bonds and has 2, 3, 4, 5, or 6 carbon atoms, particularly 2 or 3 carbon atoms ("C 2 -C 3-alkynyl”). The alkynyl is, for example, ethynyl, prop-1-ynyl, prop-2-ynyl, but-1-ynyl, but-2-ynyl, but-3-ynyl, pent-1-ynyl, pent-2-ynyl, pent-3-ynyl, pent-4-ynyl, hex-1-ynyl, hex-2-ynyl, hex-3-ynyl, hex-4-ynyl, hex-5-ynyl, 1-methylprop-2-ynyl, 2-methylbut-3-ynyl, 1-methylbut-3-ynyl, 1-methylbut-2-ynyl, 3-methylbut-1-ynyl, 1-ethylprop-2-ynyl, 3-methylpent-4-ynyl, 2-methylpent-4-ynyl, 1-methylpent-4-ynyl, 2-methylpent-3-ynyl, 1-methylpent-3-ynyl, 4-methylpent-2-ynyl, 1-methylpent-2-ynyl, 4-methylpent-1-ynyl, 3-methylpent-1-ynyl, 2-ethylbut-3-ynyl, 1-ethylbut-3-ynyl, 1-ethylbut-2-ynyl, 1-propylprop-2-ynyl, 1-isopropylprop-2-ynyl, 2,2-dimethylbut-3-ynyl, 1,1-dimethylbut-3-ynyl, 1,1-dimethylbut-2-ynyl or 3,3-dimethylbut-1-ynyl. In particular, the alkynyl is ethynyl, prop-1-ynyl or prop-2-ynyl.

[0091] The term “heteroalkyl” alone or in combination with another term means a stable straight-chain or branched-chain alkyl group or a combination thereof composed of a certain number of carbon atoms and at least one heteroatom or heteroatom group. In some embodiments, the heteroatom is selected from B, O, N, and S, where the nitrogen and sulfur atoms are optionally oxidized and the nitrogen heteroatom is optionally quaternized. In other embodiments, the heteroatom group is selected from C(=O)O, C(=O), C(=S), S(=O), S(=O) 2 , C(=O)N(H), N(H), C(=NH), S(=O) 2 N(H), and S(=O)N(H). In some embodiments, the heteroalkyl is C 16 heteroalkyl; in other embodiments, the heteroalkyl is C 13 heteroalkyl. The heteroatom or heteroatom group can be located at any internal position of the heteroalkyl, including the position where the alkyl is connected to the rest of the molecule, but the terms “alkoxy”, “alkylamino”, and “alkylthio” (or thioalkoxy) are conventional expressions and refer to those alkyl groups that are connected to the rest of the molecule through an oxygen atom, an amino group, or a sulfur atom, respectively. Examples of heteroalkyls include, but are not limited to, OCH 3 , OCH 2 CH 3 , OCH 2 CH 2 CH 3 , OCH 2 (CH 3 )2 , CH 2 CH 2 OCH 3 , NHCH 3 , N(CH 3 ) 2 , NHCH 2 CH 3 , N(CH 3 )(CH 2 CH 3 ), CH 2 CH 2 NH CH 3 , CH 2 CH 2 N(CH 3 )CH 3 , SCH 3 , SCH 2 CH 3 , SCH 2 CH 2 CH 3 , SCH 2 (CH 3 ) 2 ,

[0092] CH 2 SCH 2 CH 3 , CH 2 CH 2 , S(=O)CH 3 , CH 2 CH 2 S(=O) 2 CH 3 . At most two

[0093] heteroatoms can be consecutive, such as CH 2 NH OCH 3 .

[0094] The term "heteroalkenyl", by itself or in combination with another term, means a monovalent hydrocarbon radical, which is a stable straight-chain or branched-chain alkyl radical or a combination thereof, composed of a certain number of carbon atoms and at least one heteroatom or heteroatomic group, and contains one or more double bonds.

[0095] The term "heteroalkynyl", by itself or in combination with another term, means a monovalent alkynyl radical, which is a stable straight-chain or branched-chain alkyl radical or a combination thereof, composed of a certain number of carbon atoms and at least one heteroatom or heteroatomic group, and contains one or more triple bonds.

[0096] The term "aryl" means a cyclic aromatic hydrocarbon group having from 1 to 3 aromatic rings (including monocyclic or bicyclic or tricyclic groups), such as phenyl, biphenyl or naphthyl. When containing two aromatic rings (bicyclic, etc.), the aromatic rings of the aryl group are optionally connected at a single point (e.g., biphenyl) or fused (e.g., naphthyl). The term "C 6-14 aryl" should be understood to represent a monovalent aromatic monocyclic, bicyclic or tricyclic hydrocarbon ring having 6, 7, 8, 9, 10, 11, 12, 13 or 14 carbon atoms ("C 6-14 aryl"), optionally "C 6-12 aryl", especially a ring having 6 carbon atoms ("C 6 aryl"), such as phenyl; or biphenyl, or a bicyclic having 10 carbon atoms ("C 10 aryl"), such as naphthyl, or a tricyclic having 13 carbon atoms ("C 13 aryl"), such as fluorenyl, or a tricyclic having 14 carbon atoms ("C 14 aryl"), such as anthracenyl. BRIEF DESCRIPTION OF THE DRAWINGS

[0097] The above and / or additional aspects and advantages of the present invention will become apparent and be readily understood from the following description of embodiments in conjunction with the accompanying drawings, in which:

[0098] Figure 1 is a schematic diagram of the polytelluroxane proposed by the present invention and its application in lithography;

[0099] Figure 2 is a scanning electron microscope image of the EUV lithography pattern of poly(n-butyl telluroxane) in Example 1 of the present invention, where Figure (a) is a low dose and Figure (b) is a high dose;

[0100] Figure 3 is a scanning electron microscope image of the EUV lithography pattern of poly(n-propyl telluroxane) in Example 2 of the present invention, where Figure (a) is a low dose and Figure (b) is a high dose;

[0101] Figure 4 is a scanning electron microscope image of the EUV lithography pattern of poly(ethyl telluroxane) in Example 3 of the present invention, where Figure (a) is a low dose and Figure (b) is a high dose;

[0102] Figure 5 is a scanning electron microscope image of the EUV lithography pattern of poly(phenyl n-butyl telluroxane) in Example 4 of the present invention, where Figure (a) is a low dose and Figure (b) is a high dose;

[0103] Figure 6 is a scanning electron microscope image of the EUV lithography pattern of poly(phenyl n-propyl telluroxane) in Example 5 of the present invention, where Figure (a) is a low dose and Figure (b) is a high dose;

[0104] Figure 7 This is the scanning electron microscope image of the EUV lithography pattern of poly(phenyl ethyl telluroxide) in Example 6 of the present invention. Figure (a) shows the low dose, and Figure (b) shows the high dose;

[0105] Figure 8 This is the (a) optical microscope image and (b) atomic force microscope image of the UV lithography (I-line) pattern of poly(phenyl n-butyl telluroxide) in Example 7 of the present invention;

[0106] Figure 9 This is the (a) scanning electron microscope image and (b) cross-sectional scanning electron microscope image of the electron beam lithography pattern of poly(phenyl n-butyl telluroxide) in Example 8 of the present invention. Detailed implementation manners

[0107] The embodiments of the present application will be described in detail below. The examples are shown in the accompanying drawings. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present invention, and should not be construed as a limitation to the present invention. Additionally, all reagents used in the following embodiments are commercially available or can be synthesized according to the methods described herein or known methods if not otherwise specified. Reaction conditions not listed are also easily obtainable by those skilled in the art.

[0108] Example 1: EUV Lithography Patterning of Poly(n-butyl telluroxide)

[0109] (1) Dissolve n-butyl telluride (200 mg, 0.827 mmol) in 1 mL of dichloromethane to obtain component A. Dilute 0.5 mL of 30% hydrogen peroxide aqueous solution by a factor of two to obtain component B. Mix component A and component B thoroughly in a reaction flask. A large amount of heat is released during the reaction, and the organic phase changes from yellow to colorless. Continue the reaction for 2 days. After the reaction is completed, separate the organic phase and dropwise add it to 40 mL of methanol to produce a white precipitate. Wash the product with 10 mL of methanol and dry it in an oven at 60 °C to obtain a white solid of poly(n-butyl telluroxide) with the following structure:

[0110] where n is 150.

[0111] (2) Immerse a 1 cm * 1 cm * 625 μm silicon wafer in acetone and ultrasonically clean it for 10 minutes. After cleaning, dry it with nitrogen, place it in an oven at 110 °C for 10 minutes, and cool it to room temperature for later use. Dissolve 6 mg of poly(n-butyl telluroxide) in 1 mL of chloroform and obtain a poly(n-butyl telluroxide) thin film using the spin coating method. The spin coating speed is 2000 - 3000 rpm, and the time is 40 seconds. Dry it in an oven at 80 °C for 1 minute to remove the solvent, and obtain a poly(n-butyl telluroxide) thin film with a thickness of 20 - 30 nm.

[0112] (3) Expose the silicon wafer using EUV light with an exposure dose of 1 - 100 mJ / cm 2 . After the exposure is completed, develop it in a methanol / water mixed solvent with the volume ratio of methanol / water in the developer being 1:(0 - 0.3) and the development time being 45 - 120 seconds. After development, the corresponding pattern can be obtained.

[0113] Example 2: EUV lithography patterning of poly(n - propyl telluroxane)

[0114] The difference from Example 1 is that the poly telluroxane has the following structure:

[0115] where n is 150.

[0116] Example 3: EUV lithography patterning of poly(ethyl telluroxane)

[0117] The difference from Example 1 is that the poly telluroxane has the following structure:

[0118] where n is 150.

[0119] Example 4: EUV lithography patterning of poly(phenyl n - butyl telluroxane)

[0120] The difference from Example 1 is that the poly telluroxane has the following structure:

[0121] where n is 50.

[0122] Example 5: EUV lithography patterning of poly(phenyl n - propyl telluroxane)

[0123] The difference from Example 1 is that the poly telluroxane has the following structure:

[0124] where n is 50.

[0125] Example 6: EUV lithography patterning of poly(phenyl ethyl telluroxane)

[0126] The difference from Example 1 is that the poly telluroxane has the following structure:

[0127] where n is 50.

[0128] Example 7: UV lithography (I - line) patterning of poly(phenyl n - butyl telluroxane)

[0129] (1) Dissolve phenyl n - propyl telluride ether (200 mg, 0.827 mmol) in 1 mL of dichloromethane to obtain component A. Dilute 0.5 mL of 30% aqueous hydrogen peroxide solution by half to obtain component B. Mix component A and component B thoroughly in a reaction flask. A large amount of heat is released during the reaction, and the organic phase changes from yellow to colorless. Continue the reaction for 2 days. After the reaction is completed, separate the organic phase and add it dropwise to 40 mL of methanol to produce a white precipitate. Wash the product with 10 mL of methanol and dry it in an oven at 60 °C to obtain a white solid of poly(phenyl n - propyl telluroxane) with the following structure:

[0130] where n is 50.

[0131] (2) Immerse a 1 cm * 1 cm * 625 μm silicon wafer in acetone and ultrasonically clean it for 10 minutes. After cleaning, dry it with nitrogen, place it in an oven at 110 °C and dry it for 10 minutes. After drying, cool it to room temperature for standby. Dissolve 30 mg of poly(phenyl n - propyl telluroxane) in 1 mL of chloroform and obtain a poly(phenyl n - propyl telluroxane) thin film using the spin - coating method. The spin - coating speed is 2000 - 3000 rpm and the time is 40 seconds. Dry it in an oven at 80 °C for 1 minute to remove the solvent, and obtain a poly(phenyl n - propyl telluroxane) thin film with a thickness of 80 - 100 nm.

[0132] (3) Expose the silicon wafer using UV light (I - line), and the exposure dose is 100 - 1000 mJ / cm 2 . After the exposure is completed, develop it in a methanol / water mixed solvent, and the volume ratio of the developer methanol / water is 1:(0 - 0.3), and the development time is 45 - 120 seconds. After development, the corresponding pattern can be obtained.

[0133] Example 8: Electron - beam lithography patterning of poly(phenyl n - butyl telluroxane)

[0134] (1) Dissolve phenyl n - propyl telluride ether (200 mg, 0.827 mmol) in 1 mL of dichloromethane to obtain component A. Dilute 0.5 mL of 30% aqueous hydrogen peroxide solution by half to obtain component B. Mix component A and component B thoroughly in a reaction flask. A large amount of heat is released during the reaction, and the organic phase changes from yellow to colorless. Continue the reaction for 2 days. After the reaction is completed, separate the organic phase and add it dropwise to 40 mL of methanol to produce a white precipitate. Wash the product with 10 mL of methanol and dry it in an oven at 60 °C to obtain a white solid of poly(phenyl n - propyl telluroxane) with the following structure:

[0135] where n is 50.

[0136] (2) Immerse a 1 cm × 1 cm × 625 μm silicon wafer in acetone, ultrasonically clean it for 10 minutes, after cleaning, dry it with nitrogen, place it in an oven at 110 °C and dry for 10 minutes, and after drying, cool it to room temperature for standby. Dissolve 12 mg of poly(phenyl-n-propyl telluroxane) in 1 mL of chloroform, and use the spin-coating method to obtain a poly(phenyl-n-propyl telluroxane) thin film. The spin-coating speed is 2000 - 3000 rpm and the time is 40 seconds. Dry it at 80 °C for 1 minute to remove the solvent, and obtain a poly(phenyl-n-propyl telluroxane) thin film with a thickness of 40 - 60 nm.

[0137] (3) Use an electron beam to expose the silicon wafer, and the exposure dose is 1 - 500 μC / cm 2 . After the exposure is completed, develop it in a mixed solvent of methanol / water, and the volume ratio of the developer methanol / water is 1:(0 - 0.3), and the development time is 45 - 120 seconds. After development, the corresponding pattern can be obtained.

[0138] Analyze the sensitivity and resolution of the EUV lithography pattern of the polytelluroxane:

[0139] The sensitivity of the photoresist can be described by the exposure dose. The lower the exposure dose, the higher the sensitivity; the resolution of the photoresist can be described by the minimum line width. The smaller the minimum line width, the higher the resolution. The exposure doses and minimum line widths of the EUV lithography patterns of Examples 1 - 6 are listed in the following table 1.

[0140] Table 1

[0141]

[0142] It can be seen from the above analysis that the EUV exposure dose of the non-chemically amplified photoresist based on polytelluroxane of the present invention is between 7.58 - 32.6 mJ / cm 2 and the minimum line width is between 16 - 30 nm. Further, it can be found that the minimum exposure dose of the non-chemically amplified photoresist based on polytelluroxane of the present invention is only 7.58 mJ / cm 2 , compared with the commercial non-chemically amplified photoresist PMMA (about 20 mJ / cm 2 ), it has higher sensitivity. At the same time, the minimum line width of the non-chemically amplified photoresist based on polytelluroxane of the present invention can reach 16 nm, which has reached the performance of commercial photoresists. Especially in Examples 2 and 5, high sensitivity and high resolution are achieved simultaneously. At the same time, it can be observed that the line pattern has a low line edge roughness.

[0143] Characterize the UV lithography pattern of the polytelluroxane by optical microscopy and atomic force microscopy:

[0144] The UV lithography (I-line) pattern results of Example 7 were characterized by optical microscopy and atomic force microscopy. The relevant results are shown in Figure 8 a (optical microscopy image of UV lithography (I-line) of poly(phenyl n-butyl telluroxide)), and in Figure 8 b (atomic force microscopy image of UV lithography (I-line) of poly(phenyl n-butyl telluroxide)). The results show that poly(telluroxide) is feasible for UV lithography and has good UV lithography performance.

[0145] The electron beam lithography pattern of poly(telluroxide) was characterized by scanning electron microscopy:

[0146] The electron beam lithography pattern results of Example 8 were characterized by scanning electron microscopy. The relevant results are shown in Figure 9 a (scanning electron microscopy image of electron beam lithography of poly(phenyl n-butyl telluroxide)), Figure 9 b (cross-sectional scanning electron microscopy image of electron beam lithography of poly(phenyl n-butyl telluroxide)). The results show that poly(telluroxide) is feasible for electron beam lithography and has good electron beam lithography performance.

[0147] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without conflict, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0148] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. Application of polytelluroxane in non-chemically amplified photoresist, characterized in that: The polytelluroxane has a Te—O chain.

2. The use according to claim 1, characterized in that: The polytelluroxane is a polymer composed of monomers having a structure as shown in formula (V). ， Wherein, R1 and R2 are independently selected from hydrogen, hydroxyl, amino, thiol, C1-C 20 Alkyl, C2-C 20 Alkenyl, C2-C 20 Alkynyl, C1-C 20 Heteroalkyl, C2-C 20 Heteroalkenyl, C2-C 20 Heteroalkynyl, aryl, or a structure represented by the general formula (II), ， R3 is selected from hydroxyl, amino, cyano, and aryl, and x is any integer between 1 and 20; or R1 and R2 are connected together to form a monomer having a structure represented by general formula (VI), , R4 is selected from C1-C8 alkyl, C2-C8 alkenyl, C2-C8 alkynyl, C1-C8 heteroalkyl, C2-C8 heteroalkenyl, C2-C8 heteroalkynyl.

3. The use according to claim 2, characterized in that: The polytelluroxane has a structure as shown in formula (I): , n is any integer between 2 and 5000.

4. The use according to claim 2, characterized in that: The polytelluroxane has a structure as shown in formula (III): , n is any integer between 2 and 5000.

5. The use according to claim 2, characterized in that: The polytelluroxane has a structure as shown in formula (IV): , wherein R1' and R1'' are independently selected from R1, R2' and R2'' are independently selected from R2, and m and p are independently any integer between 1 and 5000.

6. The use according to any one of claims 2 to 5, characterized in that: R1 and R2 are independently selected from C1-C 12 Alkyl, C2-C 12 Alkenyl, C2-C 12 Alkynyl or aryl.

7. The use according to any one of claims 2 to 5, characterized in that: R1 and R2 are independently selected from C1-C4 alkyl, C2-C4 alkenyl, C2-C4 alkynyl, , or .

8. The use according to any one of claims 2 to 5, characterized in that: R1 and R2 are independently selected from C1-C4 alkyl, C2-C4 alkenyl, and C2-C4 alkynyl.

9. The use according to any one of claims 2 to 5, characterized in that: R1 is phenyl, and R2 is C1-C4 alkyl, C2-C4 alkenyl or C2-C4 alkynyl.

10. The use according to any one of claims 1 to 5, characterized in that: The polytelluroxide is , n is 150; Optionally, the polytelluroxane is , n is 150; Optionally, the polytelluroxane is , n is 150; Optionally, the polytelluroxane is , n is 50; Optionally, the polytelluroxane is , n is 50; Optionally, the polytelluroxane is , n is 50.

11. The use according to any one of claims 1 to 5, characterized in that: The application is implemented in the following way: After cleaning the substrate, a solution of polytelluroxane is applied to the substrate, and the solvent is removed by baking. The substrate is subjected to UV lithography, electron beam lithography or EUV lithography, and then developed using a developer to obtain a corresponding pattern.

12. The use according to claim 11, characterized in that: The material of the substrate is germanium, silicon, silicon carbide, silicon nitride, gallium arsenide or gallium nitride; Optionally, the cleaning of the substrate is performed by using acetone and ultrasound to clean the substrate; Optionally, the solvent of the solution of polytelluroxane is one or more mixed solvents selected from ethyl acetate, dichloromethane, chloroform, tetrahydrofuran, 2-hexanone, dimethylformamide and anisole; Optionally, the solution concentration of the polytelluroxane is 1-50 mg / mL.

13. The use according to claim 11, characterized in that The concentration of the polytelluroxane solution is 6-20 mg / mL.

14. The use according to claim 11, characterized in that: The polytelluroxane solution is applied on the substrate by using a spin coating method and a coating machine to apply the polytelluroxane solution on the substrate; Optionally, the spin coating method uses a rotation speed of 2000-5000 rpm and a time of 20-60 s; Optionally, the baking temperature is 60-120° C. and the time is 1-10 minutes; Optionally, the UV photolithography dose is 1-1000 mJ / cm 2 ; Optionally, the electron beam lithography dose is 1-500 μC / cm 2 ; Optionally, the EUV lithography dose is 1-100 mJ / cm 2 ; Optionally, the developer is one or more mixed solvents selected from isopropyl alcohol, ethanol, methanol and water.

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