Light emitting diode and light emitting device

Abstract

The application provides a light emitting diode and a light emitting device. The light emitting diode comprises: a light emitting epitaxial layer comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are sequentially stacked; an insulating layer formed on the light emitting epitaxial layer, comprising a first through hole and a second through hole; a pad electrode formed on the insulating layer, the pad electrode comprising a first pad electrode and a second pad electrode, the first pad electrode being electrically connected with the first conductive type semiconductor layer through the first through hole, and the second pad electrode being electrically connected with the second conductive type semiconductor layer through the second through hole; wherein the reflectivity of the insulating layer in a first wave band is greater than 90%, the reflectivity of the insulating layer in a second wave band is less than 15%, the first wave band is 430-500 nm, and the second wave band is 1000-1100 nm. The application increases the contact area of the pad electrode and the insulating layer, thereby increasing the surface area of the contact between the insulating layer and the pad electrode and improving the adhesion of the insulating layer and the pad electrode.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular, to a light emitting diode and a light emitting device. BACKGROUND

[0002] Light emitting diode (LED) has the advantages of low cost, high light efficiency, energy saving and environmental protection, and is widely used in vehicle-mounted, backlight, plant lighting and high-power lighting lamp fields. LED chips are divided into three types of normal structure, flip chip structure and vertical structure. Compared with the traditional normal chip, the flip chip structure is to invert the diode structure to emit light from the sapphire side, and the electrode side can be fixed on the substrate with better heat dissipation. The flip chip structure has the advantages of small power and less heat, and is often used in small power device application scenarios such as television backlight and RGB products. However, the existing flip chip LED will have the problem of peeling of the pad electrode and the insulating layer, which will further cause the failure of the light emitting diode in the die bonding process. SUMMARY

[0003] The purpose of the present application is to provide a light emitting diode and a light emitting device to solve the problems in the background art.

[0004] In a first aspect, the present application provides a light emitting diode, comprising:

[0005] A light emitting epitaxial layer, comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are sequentially stacked;

[0006] An insulating layer formed on the light emitting epitaxial layer, comprising a first through hole and a second through hole;

[0007] A pad electrode formed on the insulating layer, the pad electrode comprising a first pad electrode and a second pad electrode, the first pad electrode being electrically connected with the first conductive type semiconductor layer through the first through hole, and the second pad electrode being electrically connected with the second conductive type semiconductor layer through the second through hole;

[0008] Wherein, the reflectivity of the insulating layer in a first wave band is greater than 90%, the reflectivity of the insulating layer in a second wave band is less than 15%, the first wave band is 430nm-500nm, and the second wave band is 1000nm-1100nm.

[0009] In a second aspect, the present application provides a light emitting diode, comprising:

[0010] A light emitting epitaxial layer, comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are sequentially stacked;

[0011] an insulating layer formed on the light-emitting epitaxial layer, the insulating layer comprising a first through hole and a second through hole;

[0012] a pad electrode formed on the insulating layer, the pad electrode comprising a first pad electrode and a second pad electrode, the first pad electrode being electrically connected with the first conductive type semiconductor layer through the first through hole, and the second pad electrode being electrically connected with the second conductive type semiconductor layer through the second through hole;

[0013] wherein the insulating layer comprises a first insulating layer and a second insulating layer formed on the first insulating layer; the pad electrode is in contact with the upper surface of the second insulating layer, and the area where the pad electrode is in contact with the upper surface of the second insulating layer has a patterned structure.

[0014] In a third aspect, the present application provides a light-emitting device comprising the light-emitting diode as described above.

[0015] Compared with the prior art, the present application has at least the following beneficial effects:

[0016] The present application increases the thickness of the insulating layer or adds an insulating layer when the insulating layer is grown, without destroying the film stack of the insulating reflective layer,

[0017] By providing a stepped hole and patterning on the insulating layer, the surface area where the insulating layer is in contact with the pad electrode is further increased, and the stress inside the insulating layer is released, so that the pad electrode is firmly adhered to the insulating layer, thereby improving the stability during the die bonding process and effectively reducing the failure risk of the light-emitting diode during the die bonding process.

[0018] The present application increases the thickness of the insulating layer or adds an insulating layer when the insulating layer is grown, so that the insulating layer can absorb the invisible cutting laser in the infrared band (1000nm-1100nm) and reflect the light in the blue-green band (430nm-530nm), thereby avoiding the cutting deviation or twinning abnormality caused by the reflection of the infrared band laser by the light-emitting epitaxial layer. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be considered as limiting the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0020] Figure 1 Micrograph of peeling phenomenon of existing LED chip pad electrode;

[0021] Figure 2 Figure 2 is a partial cross-sectional view of the light emitting diode of Figure 1 ; Figure 1

[0022] Figure 3 Figure 5 is a cross-sectional structure schematic diagram of a light emitting diode according to an embodiment of the present application;

[0023] Figure 4 Figure 6 is a reflectivity schematic diagram of an insulating layer under different wave bands of laser, wherein the dark curve is the reflectivity of the insulating layer according to an embodiment of the present application, and the light curve is the reflectivity of the insulating layer of prior art;

[0024] Figure 5 Figure 7 is a cross-sectional structure schematic diagram of a light emitting diode according to an embodiment of the present application and a partial enlarged view of a second through hole;

[0025] Figure 6 Figure 8 is a profile schematic diagram of a second insulating layer according to an embodiment of the present application, which is formed around the first through hole and / or the second through hole in the form of a gear;

[0026] Figure 7 Figure 9 is a cross-sectional structure schematic diagram of a light emitting diode according to an embodiment of the present application;

[0027] Figure 8 Figure 10 is a top view structure schematic diagram of a light emitting device according to an embodiment of the present application;

[0028] Reference signs:

[0029] 11, first contact electrode; 12, first pad electrode; 13, transparent conductive layer; 14, current blocking layer; 21, second contact electrode; 22, second pad electrode; 101, substrate; 102, light emitting epitaxial layer; 102a, first conductive type semiconductor layer; 102b, active layer; 102c, second conductive type semiconductor layer; 103, first insulating layer; 103a, silicon oxide layer; 103b, insulating reflective layer; 104, second insulating layer; 104a, patterned structure; 105, first through hole; 106, second through hole. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be described clearly and completely below in conjunction with the drawings of the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, but not all the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0031] ​Therefore, the following detailed description of embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the application claimed, but merely represents selected embodiments of the application. Based on the embodiments in the application, all other embodiments obtained by those of ordinary skill in the art without creative labor are within the scope of protection of the application.

[0032] To solve the problems in the prior art, the application provides a light-emitting diode, comprising:

[0033] A light-emitting epitaxial layer comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer stacked in sequence;

[0034] An insulating layer formed on the light-emitting epitaxial layer, comprising a first through hole and a second through hole;

[0035] A pad electrode formed on the insulating layer, the pad electrode comprising a first pad electrode and a second pad electrode, the first pad electrode being electrically connected to the first-conductivity-type semiconductor layer through the first through hole, and the second pad electrode being electrically connected to the second-conductivity-type semiconductor layer through the second through hole;

[0036] The reflectivity of the insulating layer in a first wave band is greater than 90%, the reflectivity of the insulating layer in a second wave band is less than 15%, the first wave band is 430 nm-500 nm, and the second wave band is 1000 nm-1100 nm.

[0037] Optionally, the insulating layer comprises a first insulating layer and a second insulating layer formed on the first insulating layer, the first insulating layer is a Bragg reflection layer, and the layer thickness of the second insulating layer is 500 angstrom meters to 3000 angstrom meters.

[0038] Optionally, the first through hole and the second through hole are stepped holes, i.e., comprising an upper segment through hole and a lower segment through hole, the inner surface of the upper segment through hole and the inner surface of the lower segment through hole are connected by a stepped surface.

[0039] Optionally, the depth of the upper segment through hole is less than or equal to 1500 angstrom meters.

[0040] Optionally, the pad electrode and the insulating layer at the upper segment through hole form a structure of mutual insertion.

[0041] Optionally, the cross-sectional pattern of the upper segment through hole is a gear shape.

[0042] Optionally, the pad electrode and the second insulating layer have a contact area; the second insulating layer has a patterned structure, and the patterned structure is located in the contact area.

[0043] In an embodiment of the application, a light-emitting diode is provided, comprising:

[0044] a light emitting epitaxial layer comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer stacked in sequence;

[0045] an insulating layer formed on the light emitting epitaxial layer, comprising a first via hole and a second via hole;

[0046] a pad electrode formed on the insulating layer, the pad electrode comprising a first pad electrode and a second pad electrode, the first pad electrode being electrically connected with the first conductive type semiconductor layer through the first via hole, and the second pad electrode being electrically connected with the second conductive type semiconductor layer through the second via hole;

[0047] wherein the insulating layer comprises a first insulating layer and a second insulating layer formed on the first insulating layer; the pad electrode is in contact with the upper surface of the second insulating layer, and the area where the pad electrode is in contact with the upper surface of the second insulating layer has a patterned structure.

[0048] Optionally, the first via hole and the second via hole are stepped holes, i.e. comprising an upper segment via hole and a lower segment via hole, the inner surface of the upper segment via hole and the inner surface of the lower segment via hole being connected by a stepped surface.

[0049] Optionally, the depth of the upper segment via hole is less than or equal to the thickness of the second insulating layer.

[0050] Optionally, the pad electrode and the insulating layer at the upper segment via hole form a structure of mutual insertion.

[0051] Optionally, the cross-sectional pattern of the upper segment via hole is a gear shape.

[0052] Optionally, the thickness of the second insulating layer is 1000 angstroms to 1500 angstroms or 1000 angstroms to 3000 angstroms.

[0053] Optionally, the patterned structure comprises a groove extending from the upper surface of the second insulating layer to the lower surface of the first insulating layer.

[0054] Optionally, the depth of the groove is less than or equal to the thickness of the second insulating layer.

[0055] Optionally, the first insulating layer comprises a Bragg reflection layer, and the second insulating layer is a silicon oxide layer.

[0056] Optionally, the reflectivity of the insulating layer in a first wave band is greater than 90%, and the reflectivity of the insulating layer in a second wave band is less than 15%, the first wave band being 430 nm to 500 nm, and the second wave band being 1000 nm to 1100 nm.

[0057] The application further provides a light-emitting device comprising the light-emitting diode.

[0058] The light-emitting diode of the application increases the depth of the first and second through holes by increasing the thickness of the insulation layer or adding an insulation layer during growth of the insulation layer, thereby increasing the contact area of the pad electrode and the insulation layer, increasing the surface area of the contact between the insulation layer and the pad electrode, and improving the adhesion of the insulation layer and the pad electrode.

[0059] The light-emitting diode of the application further increases the contact area of the insulation layer and the pad electrode by providing a stepped hole in the first and second through holes, while releasing the stress inside the insulation layer; the application further increases the contact area of the insulation layer and the pad electrode and releases the stress inside the insulation layer by patterning the contact area between the pad electrode and the insulation layer, thereby firmly adhering the pad electrode and the insulation layer, improving the stability during die bonding, and effectively reducing the failure risk of the light-emitting diode during die bonding.

[0060] The light-emitting diode of the application increases the thickness of the insulation layer or adds an insulation layer during growth of the insulation layer, so that the insulation layer can absorb the invisible cutting laser in the infrared band (1000 nm-1100 nm) and reflect the blue-green band (430 nm-530 nm) light, thereby avoiding the cutting deviation or twinning abnormality caused by reflection of the infrared band laser by the light-emitting epitaxial layer, improving the yield of the finished product, improving the quality, and reducing the cost.

[0061] The light-emitting device of the application has reliable quality, low failure risk, and long service life due to the firm adhesion of the pad electrode and the insulation layer.

[0062] The specific embodiments of the light-emitting diode of the application will be described in detail below with reference to the accompanying drawings.

[0063] The existing flip LED chip production process may cause problems such as peeling of the pad electrode and the insulation layer, thereby causing failure of the light-emitting diode during die bonding. The microscopic image of the peeling of the pad electrode of the existing LED chip is shown in Figure 1 and Figure 2 The reason is that the size of the pad electrode is reduced, and the contact surface between the pad electrode and the insulation layer is also reduced; when the internal stress of the pad electrode is greater than the bonding force, the pad electrode will fall off from the insulation layer, and the edge of the pad electrode will be deformed. Specifically, as shown in Figure 1 two corners of the pad electrode, Figure 2 the first pad electrode 12 in

[0064] Therefore, to solve the above problems, the application provides a light emitting diode and a light emitting device.

[0065] Embodiment one

[0066] The embodiment is used to explain the light emitting diode of the application in detail. As shown in Figure 3 and Figure 4 The light emitting diode of the embodiment includes a contact electrode, a light emitting epitaxial layer 102, an insulating layer and a pad electrode, the contact electrode includes a first contact electrode 11 and a second contact electrode 21, the pad electrode includes a first pad electrode 12 and a second pad electrode 22; in addition, it also includes a substrate 101 and a transparent conductive layer 13.

[0067] The substrate 101 can be an insulating substrate. The substrate 101 can be made of transparent material or translucent material or non-transparent material. For example, it can be any one of silicon carbide, silicon, magnesium aluminum oxide, magnesium oxide, gallium nitride, sapphire. In the embodiment, the substrate 101 is a sapphire substrate.

[0068] The light emitting epitaxial layer 102 is formed on the substrate 101, and the light emitting epitaxial layer 102 has optical and electrical properties and can emit light of a preset wavelength or exit angle under the driving of a forward voltage or current. It can be formed by methods such as metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam epitaxy (MBE). The light emitting epitaxial layer 102 includes a first conductive type semiconductor layer 102a, an active layer 102b and a second conductive type semiconductor layer 102c which are sequentially stacked on the substrate 101. Among them, the first conductive type semiconductor layer 102a, the active layer 102b and the second conductive type semiconductor layer 102c can include Ш-V nitride-based semiconductors, for example, can include nitride-based semiconductors such as (A1, Ga, In). The first conductive type semiconductor layer 102a can include n-type impurities (for example, Si, Ge, Sn), and the second conductive type semiconductor layer 102c can include p-type impurities (for example, Mg, Sr, Ba). In other embodiments of the application, the dopants of the first conductive type semiconductor layer 102a and the second conductive type semiconductor layer 102c can also be opposite to the above content. The active layer 102b can include a multi-quantum well structure (MQW), and the active layer 102b can emit a desired wavelength by adjusting the composition ratio of the nitride-based semiconductor.

[0069] The transparent conductive layer 13 is formed on the surface of the second conductive type semiconductor layer 102c, has good light transmittance, and can be formed by physical vapor deposition or chemical vapor deposition. The transparent conductive layer 13 can include at least one of indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), and gallium-doped zinc oxide (GZO), and is preferably an ITO layer formed by evaporation or sputtering process, so as to reduce the energy loss of the light emitted by the light emitting epitaxial layer 102 when passing through the transparent conductive layer 13.

[0070] With reference to Figure 3 The mesa structure is formed by etching the second conductive type semiconductor layer 102c, the active layer 102b, and part of the first conductive type semiconductor layer 102a to expose the surface of the first conductive type semiconductor layer 102a, and the first contact electrode 11 is formed above the mesa structure. The transparent conductive layer 13 is formed on the second conductive type semiconductor layer 102c. The second contact electrode 21 is arranged above the transparent conductive layer 13, and the current emitted by the second contact electrode 21 can be spread as far as possible to the periphery of the transparent conductive layer 13 through the mesa structure of the transparent conductive layer 13, and then flow into the second conductive type semiconductor layer 102c.

[0071] The first contact electrode 11 and the second contact electrode 21 are used to inject carriers into the light emitting epitaxial layer 102. In some embodiments, the first contact electrode 11 and the second contact electrode 21 can be a metal electrode, such as one or any combination of nickel, gold, chromium, titanium, platinum, palladium, chromium, indium, tin, indium, but, copper, diamond, iron, nail, mistake, tungsten, molybdenum; or a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-doped zinc oxide transparent conductive glass (AZO), etc. In some embodiments, the first contact electrode 11 and the second contact electrode 21 each include a bottom layer (for example, Cr), a reflective layer (for example, Al) on the bottom layer, and a protective layer (such as Ti, Pt, or Ni, etc.) on the reflective layer.

[0072] In some embodiments of the present application, the light emitting diode further includes a current blocking layer 14 between the transparent conductive layer 13 and the light emitting epitaxial layer 102. The current blocking layer 14 is used to block the current emitted by the second contact electrode 21, so as to avoid the current being concentrated directly below the second contact electrode 21, and to disperse the current. Specifically, the current blocking layer 14 can be SiO2, Si3N4, SiON, or a composite structure thereof.

[0073] The light emitting diode further comprises a first pad electrode 12 and a second pad electrode 22, the first pad electrode 12 is filled into the first through hole 105 of the insulating layer and is electrically connected with the first contact electrode 11, and the second pad electrode 22 is filled into the second through hole 106 of the insulating layer and is electrically connected with the second contact electrode 21. The first pad electrode 12 and the second pad electrode 22 can be formed by depositing a conductive material. The conductive material can be a metal material or an alloy material, for example, a combination of one or more of Au, Ag, Al, Cu, Pt, Ti, and Cr.

[0074] In the embodiment, the insulating layer is formed on the light emitting epitaxial layer 102, and forms a cladding structure for the light emitting epitaxial layer 102, the transparent conductive layer 13, the first contact electrode 11 and the second contact electrode 21. The insulating layer is provided with a first through hole 105 and a second through hole 106, the first through hole 105 is used to expose the upper surface of the first contact electrode 11, so that the first contact electrode 11 and the first pad electrode 12 are ohmically connected, and the second through hole 106 is used to expose the upper surface of the second contact electrode 21, so that the second contact electrode 21 and the second pad electrode 22 are ohmically connected. The cross-sectional shape of the first through hole 105 and the second through hole 106 can be a regular shape or an irregular shape. The insulating layer is used to reflect the light emitted by the light emitting epitaxial layer 102, so that the light is emitted from the surface of the substrate 101.

[0075] The insulating layer comprises a Bragg reflection layer. The Bragg reflection layer can be formed by laminating dielectric layers with different refractive indexes, and the dielectric layers can comprise TiO2, SiO2, HfO2, ZrO2, Nb2O5, MgF2, etc. For example, the insulating layer can have a structure of alternately laminated TiO2 layers / SiO2 layers.

[0076] In the existing core particle hidden cutting process, a laser with a certain wavelength, for example, a laser with a wavelength of 1000 nm to 1100 nm, is used. If the reflectivity of the core particle is high in the working wavelength band of the laser, the laser will be reflected on the core particle. The reflection of the laser causes the loss of the laser energy used for hidden cutting, and the automatic image recognition effect is not good during hidden cutting, which finally leads to cutting deviation or twinning abnormality.

[0077] In the embodiment, the insulating layer comprises a first insulating layer 103 and a second insulating layer 104 formed on the first insulating layer 103, wherein the reflectivity of the insulating layer in the first wavelength band is greater than 90%, the reflectivity of the insulating layer in the second wavelength band is less than 15%, the first wavelength band is 430 nm to 530 nm (blue-green wavelength band), and the second wavelength band is the same as the wavelength band of the light source used for laser cutting, for example, the second wavelength band is 1000 nm to 1100 nm (infrared wavelength band). Figure 4As shown. Through the structural design, the reflectivity of the infrared band is significantly reduced without affecting the reflectivity of the insulation layer in the blue-green light band, which does not cause energy loss and image automatic identification abnormality during cutting, thereby reducing the cutting deviation or birefringence abnormality of the cutting.

[0078] The material of the second insulation layer 104 can be silicon oxide, silicon nitride, etc. In a preferred embodiment, the material of the second insulation layer 104 is silicon oxide.

[0079] In an embodiment, the thickness of the second insulation layer 104 is 500 angstroms to 3000 angstroms.

[0080] Further, referring to Figure 5 , in some embodiments of the present application, without damaging the DBR film structure of the insulation layer, the first via hole 105 and the second via hole 106 are step holes, further increasing the contact area of the pad electrode and the insulation layer. The first via hole 105 and the second via hole 106 include upper and lower two-section via holes, the inner surface of the upper section via hole and the inner surface of the lower section via hole are connected by a step surface. The depth of the upper section via hole is less than or equal to the thickness of the second insulation layer 104, for example, the depth of the upper section via hole is less than or equal to 1500 angstroms. The cross section of the upper and lower two-section via holes is circular, the diameter of the upper section via hole is greater than the diameter of the lower section via hole, so that the step surface between the upper section via hole and the lower section via hole is located on the upper surface of the silicon oxide layer 103a of the uppermost part of the first insulation layer 103, as shown by the second via hole 106 shown in Figure 5 . Therefore, the insulation reflection layer 103b of the first insulation layer 103 below the silicon oxide layer 103a will not be affected, ensuring that the DBR film structure of the insulation layer is not damaged. Optionally, without damaging the DBR film structure of the insulation layer, the step surface between the upper section via hole and the lower section via hole of the first via hole 105 and the second via hole 106 is even above the upper surface of the insulation reflection layer 103b of the first insulation layer.

[0081] Referring to Figure 6 , further, in some other embodiments of the present application, the pad electrode and the insulation layer at the upper section via hole form a mutual insertion structure. Specifically, the cross-sectional pattern of the upper section via hole of the first via hole 105 and the second via hole 106 is a gear shape, further increasing the contact area of the pad electrode and the insulation layer after mutual insertion, while releasing the stress inside the insulation layer, especially the stress of the connection area with the pad electrode, finally making the pad electrode and the insulation layer adhere more firmly, improving the stability during the die bonding process, and effectively reducing the failure risk of the light emitting diode during the die bonding process.

[0082] It is predictable that in some other embodiments of the present application, in order to realize the structure that the pad electrode and the insulating layer are inserted into each other, the cross-sectional pattern of the upper segment via hole can also be an irregular pattern, for example, the circumferential upper segment has teeth, part of which has no teeth, or the teeth are other shapes, for example, the teeth are triangular, arc-shaped or other shapes.

[0083] Referring to Figure 5 and Figure 7 , further, in some other embodiments of the present application, the first pad electrode 12 and the second pad electrode 22 are in contact with the upper surface of the second insulating layer 104, and the first pad electrode 12 and the second pad electrode 22 have a contact area with the second insulating layer 104; as shown in Figure 7 , the second insulating layer 104 has a patterned structure 104a.

[0084] In the embodiments of the present application, the patterned structure 104a is located in the above-mentioned contact area, further increasing the contact area of the pad electrode 12, 22 and the second insulating layer 104, releasing the stress inside the insulating layer, and improving the adhesion between the pad electrode and the insulating layer.

[0085] In some embodiments of the present application, the thickness of the second insulating layer 104 is 1000 angstroms to 1500 angstroms or 1000 angstroms to 3000 angstroms. The patterned structure 104a includes a groove extending from the upper surface of the second insulating layer 104 to the lower surface of the first insulating layer 103. The shape of the groove includes a cone, a triangular pyramid or a hexagonal pyramid, etc. The depth of the groove is less than or equal to the thickness of the second insulating layer 104. Since the thickness of the second insulating layer 104 is 1000 angstroms to 1500 angstroms or 1000 angstroms to 3000 angstroms, the depth of the groove can be selected within 1000 angstroms. The patterned structure 104a is made by pattern imprinting, dry etching or wet etching.

[0086] In some embodiments of the present application, the first insulating layer 103 includes a Bragg reflection layer, and the second insulating layer 104 is a silicon oxide layer.

[0087] Embodiment Two

[0088] This embodiment is used to illustrate the light emitting device of the present application. As shown in Figure 8 , the light emitting device 300 of the present application includes a plurality of light emitting diodes 301 of the present application, and further includes a circuit substrate 302 and a solder.

[0089] The circuit substrate 302 includes a plurality of pad electrodes, and the plurality of light emitting diodes 301 are arranged on the circuit substrate 302. The solder pastes the light emitting diodes 301 on the pad electrodes on the circuit substrate 302.

[0090] The light emitting diode of the present application has firm adhesion of the pad electrode and the insulating layer, and thus the light emitting device of the present application has reliable quality and low failure risk.

[0091] The above only is the preferred embodiment of the present application, and is not used to limit the present application, and for the person skilled in the art, the present application can have various changes and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A light emitting diode, characterized by, The application relates to a light emitting diode, comprising: a light emitting epitaxial layer comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are sequentially stacked; an insulating layer formed on the light emitting epitaxial layer, comprising a first through hole and a second through hole; a pad electrode formed on the insulating layer, the pad electrode comprising a first pad electrode and a second pad electrode, the first pad electrode being electrically connected with the first conductive type semiconductor layer through the first through hole, and the second pad electrode being electrically connected with the second conductive type semiconductor layer through the second through hole; wherein the insulating layer comprises a first insulating layer and a second insulating layer formed on the first insulating layer, the first insulating layer comprises a Bragg reflection layer, the thickness of the second insulating layer is 500 angstrom meters to 3000 angstrom meters, the reflectivity of the insulating layer in a first wave band is greater than 90%, and the reflectivity of the insulating layer in a second wave band is less than 15%, the first wave band is 430 nm to 500 nm, and the second wave band is 1000 nm to 1100 nm. The first through hole and the second through hole are step holes, that is, the first through hole and the second through hole comprise an upper segment through hole and a lower segment through hole, and the inner surface of the upper segment through hole and the inner surface of the lower segment through hole are connected through a step surface. The depth of the upper segment through hole is less than or equal to 1500 angstrom meters. The pad electrode and the insulating layer at the upper segment through hole form a mutual insertion structure. The cross-sectional pattern of the upper segment through hole is a gear shape.

2. The light emitting diode of claim 1, wherein, The pad electrode and the second insulating layer have a contact area; the second insulating layer has a patterning structure, and the patterning structure is located in the contact area.

3. The light emitting diode of claim 2, wherein, The application relates to a light emitting diode, comprising: a light emitting epitaxial layer comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are sequentially stacked; an insulating layer formed on the light emitting epitaxial layer, comprising a first through hole and a second through hole; a pad electrode formed on the insulating layer, the pad electrode comprising a first pad electrode and a second pad electrode, the first pad electrode being electrically connected with the first conductive type semiconductor layer through the first through hole, and the second pad electrode being electrically connected with the second conductive type semiconductor layer through the second through hole; wherein the insulating layer comprises a first insulating layer and a second insulating layer formed on the first insulating layer; the pad electrode is in contact with the upper surface of the second insulating layer, the contact area between the pad electrode and the upper surface of the second insulating layer has a patterning structure; the reflectivity of the insulating layer in a first wave band is greater than 90%, and the reflectivity of the insulating layer in a second wave band is less than 15%, the first wave band is 430 nm to 500 nm, and the second wave band is 1000 nm to 1100 nm.

4. The light emitting diode of claim 2, wherein, The first through hole and the second through hole are step holes, that is, the first through hole and the second through hole comprise an upper segment through hole and a lower segment through hole, and the inner surface of the upper segment through hole and the inner surface of the lower segment through hole are connected through a step surface.

5. The light emitting diode of claim 4, wherein, The depth of the upper segment through hole is less than or equal to the thickness of the second insulating layer.

6. The light emitting diode of claim 1, wherein, The pad electrode and the insulating layer at the upper segment through hole form a mutual insertion structure.

7. A light emitting diode, comprising: The cross-sectional pattern of the upper segment through hole is a gear shape. The thickness of the second insulating layer is 1000 angstrom meters to 1500 angstrom meters or 1000 angstrom meters to 3000 angstrom meters. ​ ​ ​ 8. The light emitting diode of claim 7, wherein, ​ 9. The light emitting diode of claim 8, wherein, ​ 10. The light emitting diode of claim 8, wherein, ​ 11. The light emitting diode of claim 9, wherein the first and second semiconductor layers are formed of a group III-V compound semiconductor. ​ 12. The light emitting diode of claim 7, wherein, ​ 13. The light emitting diode of claim 7, wherein, The patterned structure includes a groove extending from an upper surface of the second insulating layer to a lower surface of the first insulating layer.

14. The light emitting diode of claim 13, wherein, A depth of the groove is less than or equal to a thickness of the second insulating layer.

15. The light emitting diode of claim 7, wherein, The first insulating layer includes a Bragg reflector layer, and the second insulating layer is a silicon oxide layer.

16. A light emitting device comprising: A light emitting diode comprising any one of claims 1-15.

Images