Optical proximity correction method, storage medium, and terminal

Abstract

An optical proximity correction method, a storage medium and a terminal, wherein the optical proximity correction method comprises: providing a wafer layout, the wafer layout having a plurality of target patterns; selecting a measurement origin on the wafer layout; obtaining a feature element of each target pattern based on the measurement origin; judging whether there is relevance between different target patterns based on the feature element; performing optical proximity correction result multiplexing between target patterns with relevance; and performing optical proximity correction on remaining target patterns without relevance. By selecting only one measurement origin on the wafer layout, since each feature element is obtained based on the same measurement origin, when judging whether there is relevance between different target patterns based on the feature element, data conversion is not required and comparison can be directly performed, which can effectively improve the speed of optical proximity correction, and also can effectively improve the result of optical proximity correction without causing confusion between data.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an optical proximity correction method, a storage medium and a terminal. BACKGROUND

[0002] Integrated circuit manufacturing technology is a complex process, and the technology is updated very quickly. A key parameter for characterizing integrated circuit manufacturing technology is the minimum feature size, i.e., the critical dimension (CD). As the critical dimension is reduced, even to the nanometer level, it is the reduction of the critical dimension that makes it possible to set millions of devices on each chip.

[0003] Lithography technology is the driving force for the development of integrated circuit manufacturing technology, and is one of the most complex technologies. Compared with other single manufacturing technologies, the improvement of lithography technology is of great significance to the development of integrated circuits. Before the lithography process begins, the pattern is first copied to a mask by a specific device, and then the pattern structure on the mask is copied to the silicon wafer for producing chips by a photolithography device generating light of a specific wavelength. However, due to the reduction of the size of semiconductor devices, distortion occurs during the transfer of the pattern to the silicon wafer. If this distortion is not eliminated, the entire manufacturing technology will fail. Therefore, in order to solve the problem, optical proximity correction (OPC) can be performed on the mask. The optical proximity correction method is a pre-treatment of the lithography mask before lithography, which is a pre-modification that makes the modified compensation exactly compensate for the optical proximity effect caused by the exposure system.

[0004] However, the optical proximity correction in the prior art still has many problems. SUMMARY

[0005] The technical problem solved by the present application is to provide an optical proximity correction method, a storage medium and a terminal to improve the speed and results of optical proximity correction.

[0006] To solve the above problems, the technical scheme of the present application provides an optical proximity correction method, comprising: providing a wafer layout, the wafer layout having a plurality of target patterns; selecting a measurement origin on the wafer layout; obtaining feature elements of each target pattern based on the measurement origin; determining whether there is a correlation between different target patterns based on the feature elements; performing optical proximity correction result multiplexing between target patterns with the correlation; and performing optical proximity correction on the remaining target patterns without correlation.

[0007] Optionally, the feature elements of the target graph include lengths of the edges of the target graph and angles between adjacent edges.

[0008] Optionally, the method for obtaining the feature elements of each target graph based on the measurement origin includes: obtaining coordinates of each boundary intersection point of the target graph based on the measurement origin; and obtaining lengths of the edges of the target graph and angles between adjacent edges based on the coordinates of each edge intersection point of the target graph.

[0009] Optionally, the correlation between different target graphs includes direct geometric isomorphism and indirect geometric isomorphism; the direct geometric isomorphism is that two target graphs can be directly coincided by translation; and the indirect geometric isomorphism is that two target graphs need to be converted and then coincided by translation.

[0010] Optionally, the indirect geometric isomorphism includes: rotation geometric isomorphism, in which any one of two target graphs is rotated and then coincided by translation; mirror geometric isomorphism, in which any one of two target graphs is mirrored and then coincided by translation; and mixed geometric isomorphism, in which any one of two target graphs is mirrored and rotated and then coincided by translation.

[0011] Optionally, before determining whether the correlation between different target graphs exists based on the feature elements, the method further includes: selecting a first original graph from the target graphs; and comparing the remaining target graphs with the first original graph.

[0012] Optionally, the method for selecting the first original graph from the target graphs includes: selecting the first original graph based on the number of edges of the target graph, wherein the number of edges of the target graph is negatively correlated with the selection priority.

[0013] Optionally, when the target graphs with the same selection priority are multiple, the first original graph is selected from the target graphs with the highest selection priority and the largest number of identical graphs.

[0014] Optionally, when the target graphs with the highest selection priority and the largest number of identical graphs are multiple, the first original graph is selected from the target graph with the first obtained coordinates based on the order of obtaining coordinates of each target graph.

[0015] Optionally, when the target pattern with the highest selection priority and the most same patterns is in multiple groups, the target pattern with the first acquired coordinate is selected as the first original pattern based on the order of acquiring the coordinates of each target pattern from the measurement origin.

[0016] Optionally, when it is determined that the different target patterns do not have relevance, the target pattern compared with the first original pattern is selected as a second original pattern, and the remaining target patterns are compared with the first original pattern and the second original pattern respectively.

[0017] Optionally, the method for determining the relevance between different target patterns based on the feature elements comprises: forming a feature list according to a preset arrangement order of the feature elements; when the feature elements of the feature list of two target patterns are completely the same, it is determined that the two target patterns have relevance; and when the feature elements of the feature list of two target patterns are not completely the same, it is determined that the two target patterns do not have relevance.

[0018] Optionally, when the feature elements of the feature list of two target patterns are completely the same, the preset arrangement order of the feature elements is completely the same, and the two target patterns can be coincided by translation, it is determined that the two target patterns are directly geometrically isomorphic.

[0019] Optionally, the method for performing optical proximity correction result multiplexing between the target patterns with relevance comprises: when it is determined that two target patterns are directly geometrically isomorphic, the optical proximity correction result of the target pattern as the original pattern is multiplexed to another target pattern.

[0020] Optionally, when the feature elements of the feature list of two target patterns are completely the same, the preset arrangement order of the feature elements is also completely the same, and the two target patterns cannot be coincided by translation, it is determined that the two target patterns are rotationally geometrically isomorphic.

[0021] Optionally, the method for performing optical proximity correction result multiplexing between the target patterns with relevance comprises: when it is determined that two target patterns are rotationally geometrically isomorphic, the target pattern as the original pattern is rotated by a preset step angle one by one until the two target patterns can be coincided by translation, and the rotation angle of the target pattern as the original pattern is acquired; and the optical proximity correction result of the target pattern as the original pattern is rotated by the rotation angle and then multiplexed to another target pattern.

[0022] Optionally, when the feature elements of the feature lists of the two target patterns are completely identical, the preset arrangement orders of the feature elements are not completely identical, and the two target patterns can be coincided by translation after mirroring the target pattern as the original pattern, it is judged that the two target patterns are mirror geometric isomorphism.

[0023] Optionally, when the feature elements of the feature lists of the two target patterns are completely identical, the preset arrangement orders of the feature elements are not completely identical, and the two target patterns cannot be coincided by translation after mirroring the target pattern as the original pattern, it is judged that the two target patterns are mixed geometric isomorphism.

[0024] Optionally, the method for multiplexing the optical proximity correction results between the target patterns with the correlation includes: after judging that the two target patterns are mirror geometric isomorphism, mirroring the target pattern as the original pattern until the two target patterns can be coincided by translation, obtaining the symmetry axis of the mirror image of the target pattern as the original pattern; and mirroring the optical proximity correction result of the target pattern as the original pattern according to the symmetry axis and multiplexing it onto the other target pattern.

[0025] Optionally, the method for multiplexing the optical proximity correction results between the target patterns with the correlation includes: after judging that the two target patterns are mixed geometric isomorphism, mirroring and rotating the target pattern as the original pattern until the two target patterns can be coincided by translation, obtaining the symmetry axis of the mirror image of the target pattern as the original pattern and the rotation angle; mirroring the optical proximity correction result of the target pattern as the original pattern according to the symmetry axis and rotating it according to the rotation angle and multiplexing it onto the other target pattern.

[0026] Optionally, the symmetry axis of the mirror image includes one or more of a first symmetry axis and a second symmetry axis, and the first symmetry axis and the second symmetry axis are perpendicular.

[0027] Optionally, after obtaining the feature elements of each target pattern based on the measurement origin, and before judging whether there is a correlation between different target patterns based on the feature elements, it further includes: dividing a plurality of target patterns into a plurality of pattern regions.

[0028] Optionally, the target pattern in each pattern region is compared with the first original pattern or the second original pattern at the same time, respectively.

[0029] Optionally, dividing the target graphics into graphic regions comprises: dividing the target graphics into the graphic regions according to function modules, or dividing the target graphics into the graphic regions according to the similarity of graphic types.

[0030] Correspondingly, the present application also provides a storage medium having computer instructions stored thereon, wherein the computer instructions perform the steps of the method of any one of the technical solutions when executed.

[0031] Correspondingly, the present application also provides a terminal comprising a memory and a processor, wherein the memory has computer instructions stored thereon capable of being executed on the processor, and wherein the processor performs the steps of the method of any one of the technical solutions when executing the computer instructions.

[0032] Compared with the prior art, the technical solution of the present application has the following advantages:

[0033] In the optical proximity correction method of the present application, only one measurement origin is selected on the wafer layout, and feature elements of each target graphic are obtained based on the measurement origin. Since each feature element is obtained based on the same measurement origin, when judging whether different target graphics have relevance based on the feature elements, the data conversion is not required and the comparison can be directly performed, which can effectively improve the speed of optical proximity correction, and also can not cause confusion between data, which can effectively improve the result of optical proximity correction.

[0034] Further, when it is judged that different target graphics do not have relevance, the target graphic compared with the first original graphic is selected as a second original graphic, and the remaining target graphics are compared with the first original graphic and the second original graphic respectively. By selecting the target graphic without relevance as the second original graphic for comparison with subsequent target graphics, the comprehensiveness of comparison between target graphics is ensured, and the situation that the target graphic with relevance is missed is prevented, further improving the result of optical proximity correction.

[0035] Further, the target graphics in each graphic region are compared with the first original graphic or the second original graphic respectively. By comparing the target graphics in different graphic regions with the first original graphic or the second original graphic at the same time, the comparison efficiency can be effectively improved, and the speed of optical proximity correction can be further improved. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1is a schematic diagram of measurement origin selection on a wafer layout in optical proximity correction;

[0037] Figure 2 is a flowchart of an optical proximity correction method in an embodiment of the present application;

[0038] Figures 3 to 11 is a structural schematic diagram of each step of the optical proximity correction method in an embodiment of the present application. DETAILED DESCRIPTION

[0039] As described in the background, there are still many problems in the optical proximity correction in the prior art. The following will be specifically described with reference to the drawings.

[0040] Figure 1 is a schematic diagram of measurement origin selection on a wafer layout in optical proximity correction;

[0041] In integrated circuit physical design, there is great similarity between local regions, and such similarity determines the similarity of the optical proximity correction calculation process and calculation results between local regions. Direct optical proximity correction may exist a large amount of redundant calculation. Replication of the calculation results can effectively reduce the complex simulation calculation task, and can improve the speed of the overall optical proximity correction of the chip without sacrificing the simulation accuracy.

[0042] Please refer to Figure 1 , at present, in order to obtain the data of optical proximity correction, an origin O is defined for each repeated graphic region, and then the positioning and capturing of each graphic in the graphic region are realized according to the position of each graphic in the graphic region relative to the origin O.

[0043] However, due to the huge number of repeated graphic regions, the workload of the positioning and capturing mode with multiple origins O is huge, time-consuming and laborious, and it is also easy to cause confusion of data and affect the final optical proximity correction result.

[0044] On this basis, the present application provides an optical proximity correction method, a storage medium and a terminal, by selecting only one measurement origin on the wafer layout, and obtaining the feature elements of each target graphic based on the measurement origin. Since each feature element is obtained based on the same measurement origin, when judging whether the different target graphics have correlation based on the feature elements, data conversion is not required and comparison can be directly made, which can effectively improve the speed of optical proximity correction, and also will not cause confusion between data, which can effectively improve the result of optical proximity correction.

[0045] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings. In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings.

[0046] Figure 2 is a flowchart of an optical proximity correction method according to an embodiment of the present application, comprising:

[0047] In step S101, a wafer layout is provided, wherein a plurality of target patterns are included.

[0048] In step S102, a measurement origin is selected on the wafer layout.

[0049] In step S103, a feature element of each target pattern is obtained based on the measurement origin.

[0050] In step S104, it is determined whether there is a correlation between different target patterns based on the feature element.

[0051] In step S105, optical proximity correction result multiplexing is performed between the target patterns having the correlation.

[0052] In step S106, optical proximity correction is performed on the remaining target patterns without the correlation.

[0053] The steps of the post-exposure measurement method will be described in detail below with reference to the accompanying drawings.

[0054] Figures 3 to 11 The structure diagram of the steps of the optical proximity correction method according to an embodiment of the present application.

[0055] Please refer to Figure 3 In step S101, a wafer layout 100 is provided, wherein a plurality of target patterns 101 are included.

[0056] It should be noted that in this embodiment, the plurality of target patterns 101 on the wafer layout 100 are initial patterns without any optical proximity correction. In order to facilitate illustration, Figure 3 The target patterns 101 shown in the figure are all identical rectangles. However, in the actual wafer layout 100, each target pattern 101 is different, and not all are rectangles.

[0057] Please refer to Figure 4 In step S102, a measurement origin O is selected on the wafer layout 100.

[0058] In this embodiment, the measurement origin O is selected at the lower left corner of the wafer layout 100.

[0059] Please refer to Figure 5 In step S103, a feature element of each target pattern 101 is obtained based on the measurement origin O.

[0060] In the embodiment, the feature elements of the target pattern 101 include the length dimension Len of each side of the target pattern 101 and the included angle a between adjacent sides.

[0061] It should be noted that, in the embodiment, the feature elements are acquired for the target pattern 101 which is a polygon. In other embodiments, when there is an arc segment in the target pattern, the arc length, the radian and other feature elements thereof are acquired by professional software.

[0062] In the embodiment, the method for acquiring the feature elements of each target pattern 101 based on the measurement origin O includes: acquiring the coordinates of each boundary intersection point of the target pattern 101 based on the measurement origin O; and acquiring the length dimension Len of each side of the target pattern 101 and the included angle a between adjacent sides based on the coordinates of each corner intersection point of the target pattern 101.

[0063] The length dimension Len of each side of the target pattern 101 can be acquired by calculating with the two-point coordinate distance formula based on the coordinates of each corner intersection point of the target pattern 101. The included angle a between adjacent sides can be acquired by calculating with the plane vector method and the cosine formula based on the coordinates of each corner intersection point of the target pattern 101.

[0064] Please refer to Figure 6 After step S103, the target patterns 101 are divided into a plurality of pattern regions 100a.

[0065] By dividing the target patterns 101 into a plurality of pattern regions 100a, the target patterns 101 in each pattern region 100a can be compared with the target pattern 101 as the original pattern at the same time in the subsequent comparison process, so as to improve the comparison efficiency and the speed of optical proximity correction.

[0066] In the embodiment, dividing the target patterns 101 into a plurality of pattern regions 100a includes: dividing the target patterns 101 into the pattern regions 100a according to functional modules, or dividing the target patterns 101 into the pattern regions 100a according to the similarity of pattern types.

[0067] Please refer to Figure 7 After step S103, a first original pattern 101a is selected from the target patterns 101, and the remaining target patterns 101 are compared with the first original pattern 101a.

[0068] In the embodiment, the method for selecting the first primitive pattern 101a from the target patterns 101 includes: selecting the first primitive pattern 101a based on the number of edges of the target patterns 101, and the number of edges of the target patterns 101 is negatively correlated with the selection priority.

[0069] In a specific embodiment, the target patterns 101 in the wafer layout 100 include quadrilaterals, pentagons and hexagons, and the first primitive pattern 101a is selected from the quadrilaterals.

[0070] In the embodiment, when the target patterns 101 with the same selection priority are multiple, the first primitive pattern 101a is selected from the target patterns 101 with the highest selection priority and the largest number of the same patterns.

[0071] In a specific embodiment, if the number of quadrilateral target patterns 101 is 100, and the number of the same patterns is the largest among them is 80, then the first primitive pattern 101a is selected from the 80 target patterns 101.

[0072] In the embodiment, the same pattern means that two target patterns 101 are congruent.

[0073] In the embodiment, when the target patterns 101 with the highest selection priority and the largest number of the same patterns are multiple, the order of obtaining the coordinates of each target pattern 101 based on the measurement origin O is obtained, and the target pattern 101 with the first obtained coordinates is selected as the first primitive pattern 101a.

[0074] In the specific embodiment, if the order of obtaining the coordinates of each target pattern 101 based on the measurement origin O is from left to right and from bottom to top, then the target pattern 101 located at the lower left corner of the 80 target patterns 101 is selected as the first primitive pattern 101a.

[0075] In the embodiment, when the target patterns 101 with the highest selection priority and the largest number of the same patterns are multiple groups, the order of obtaining the coordinates of each target pattern 101 based on the measurement origin O is obtained, and the target pattern 101 with the first obtained coordinates is selected as the first primitive pattern 101a.

[0076] In a specific embodiment, if the number of quadrilateral target patterns 101 is 100, and the number of the same patterns is the largest among them is 30 and has two groups, and the order of obtaining the coordinates of each target pattern 101 based on the measurement origin O is from left to right and from bottom to top, then the target pattern 101 located at the lower left corner of the 60 target patterns 101 is selected as the first primitive pattern 101a.

[0077] Please continue to refer to Figure 7 In this embodiment, when it is judged that the target patterns 101 do not have the correlation, the target pattern 101 compared with the first original pattern 101a is taken as the second original pattern 101b, and the remaining target patterns 101 are compared with the first original pattern 101a and the second original pattern 101b respectively.

[0078] By selecting the target pattern 101 without the correlation as the second original pattern 101b for comparison with the subsequent target patterns 101, the comprehensiveness of the comparison between the target patterns 101 is ensured, and the target patterns 101 with the correlation are prevented from being missed, thereby further improving the result of optical proximity correction.

[0079] In step S104, it is judged whether the target patterns 101 have the correlation based on the feature elements.

[0080] Please refer to Figure 8 In this embodiment, the correlation between the target patterns 101 includes direct geometric isomorphism, which means that two target patterns 101 can be superimposed by translation.

[0081] In this embodiment, the correlation between the target patterns 101 includes indirect geometric isomorphism, which means that two target patterns 101 need to be converted by pattern conversion and then superimposed by translation.

[0082] Please refer to Figure 9 In this embodiment, the indirect geometric isomorphism includes rotational geometric isomorphism, which means that any one of two target patterns 101 is rotated and then superimposed by translation.

[0083] Please refer to Figure 10 In this embodiment, the mirror geometric isomorphism means that any one of two target patterns 101 is mirrored and then superimposed by translation.

[0084] Please refer to Figure 11 In this embodiment, the mixed geometric isomorphism means that any one of two target patterns 101 is mirrored and rotated and then superimposed by translation.

[0085] In the embodiment, the method for judging the correlation between different target patterns 101 based on the feature elements comprises: forming a feature list according to a preset arrangement order of the feature elements; when the feature elements of the feature list of two target patterns 101 are completely identical, it is judged that the two target patterns 101 have correlation; when the feature elements of the feature list of two target patterns 101 are not completely identical, it is judged that the two target patterns 101 do not have correlation.

[0086] In one specific embodiment, the preset arrangement order can be the clockwise or counterclockwise order to arrange the length dimension Len of each edge in the target pattern 101 and the included angle a between adjacent edges.

[0087] In the embodiment, when the feature elements of the feature list of two target patterns 101 are completely identical, the preset arrangement order of the feature elements is completely identical, and the two target patterns 101 can be coincided by translation, it is judged that the two target patterns 101 are direct geometric isomorphism.

[0088] In the embodiment, when the feature elements of the feature list of two target patterns 101 are completely identical, the preset arrangement order of the feature elements is not completely identical, and after mirroring the target pattern 101 as the original pattern, the two target patterns 101 can be coincided by translation, it is judged that the two target patterns 101 are mirror geometric isomorphism.

[0089] In the embodiment, when the feature elements of the feature list of two target patterns 101 are completely identical, the preset arrangement order of the feature elements is not completely identical, and after mirroring the target pattern 101 as the original pattern, the two target patterns 101 cannot be coincided by translation, it is judged that the two target patterns 101 are mixed geometric isomorphism.

[0090] In the embodiment, when the feature elements of the feature list of two target patterns 101 are completely identical, the preset arrangement order of the feature elements is also completely identical, and the two target patterns 101 cannot be coincided by translation, it is judged that the two target patterns 101 are rotational geometric isomorphism.

[0091] In step S105, the optical proximity correction result multiplexing is performed between the target patterns 101 with the correlation.

[0092] In the embodiment, the method for multiplexing the optical proximity correction result between the target patterns 101 with the correlation includes: when judging that two target patterns 101 are directly geometrically isomorphic, multiplexing the optical proximity correction result of the target pattern 101 as a primitive pattern onto another target pattern 101.

[0093] Please continue to refer to Figure 9 In the embodiment, the method for multiplexing the optical proximity correction result between the target patterns 101 with the correlation includes: when judging that two target patterns 101 are rotationally geometrically isomorphic, rotating the target pattern 101 as a primitive pattern by a preset step angle one by one until two target patterns 101 can be coincided by translation, obtaining a rotation angle δ of the target pattern 101 as a primitive pattern; and multiplexing the optical proximity correction result of the target pattern 101 as a primitive pattern onto another target pattern 101 after rotating by the rotation angle δ.

[0094] Please continue to refer to Figure 10 In the embodiment, the method for multiplexing the optical proximity correction result between the target patterns 101 with the correlation includes: when judging that two target patterns 101 are mirror geometrically isomorphic, mirroring the target pattern 101 as a primitive pattern until two target patterns 101 can be coincided by translation, obtaining a symmetry axis of the target pattern 101 as a primitive pattern; and multiplexing the optical proximity correction result of the target pattern 101 as a primitive pattern onto another target pattern 101 after mirroring according to the symmetry axis.

[0095] Please continue to refer to Figure 11 In the embodiment, the method for multiplexing the optical proximity correction result between the target patterns 101 with the correlation includes: when judging that two target patterns 101 are mixed geometrically isomorphic, mirroring and rotating the target pattern 101 as a primitive pattern until two target patterns 101 can be coincided by translation, obtaining a symmetry axis of the target pattern 101 as a primitive pattern and a rotation angle δ; and multiplexing the optical proximity correction result of the target pattern 101 as a primitive pattern onto another target pattern 101 after mirroring according to the symmetry axis and rotating according to the rotation angle δ.

[0096] In the embodiment, the symmetry axis of the mirroring includes one or more of a first symmetry axis S1 and a second symmetry axis S2, and the first symmetry axis S1 and the second symmetry axis S2 are perpendicular.

[0097] The mirroring of the target pattern 101 as the original pattern includes: first mirroring the target pattern 101 as the original pattern based on the first symmetry axis S1; if the two target patterns 101 after mirroring cannot be overlapped by translation, then re-mirroring the target pattern 101 as the original pattern based on the second symmetry axis S2; if the two target patterns 101 after mirroring cannot be overlapped by translation, then re-mirroring the target pattern 101 as the original pattern first based on the first symmetry axis S1 and then based on the second symmetry axis S2.

[0098] It should be noted that in the present embodiment, the target pattern 101 as the original pattern includes the target pattern 101 as the first original pattern 101a or the second original pattern 101b.

[0099] By selecting only one measurement origin O on the wafer layout 100, the feature elements of each target pattern 101 are obtained based on the measurement origin O. Since each feature element is obtained based on the same measurement origin O, when judging whether the different target patterns 101 have correlation based on the feature elements, the data conversion is not required and the comparison can be directly performed, which can effectively improve the speed of optical proximity correction and also can not cause confusion between data, thereby effectively improving the result of optical proximity correction.

[0100] In step S106, the optical proximity correction is performed on the target patterns 101 that do not have correlation.

[0101] In the present embodiment, the target patterns 101 that do not have correlation are the parts of the second original pattern 101b that do not have correlation with any target pattern 101. The target patterns 101 that do not have correlation can be subjected to conventional optical proximity correction.

[0102] Although the present application is disclosed as above, the present application is not limited thereto. Any person skilled in the art, without departing from the spirit and scope of the present application, can make various changes and modifications, and therefore the protection scope of the present application should be subject to the scope defined by the claims.

Claims

1. An optical proximity correction method characterized by, The application relates to a method for optical proximity correction of a wafer layout. The method comprises the following steps: providing a wafer layout with a plurality of target patterns; selecting a measurement origin on the wafer layout; acquiring feature elements of each target pattern based on the measurement origin; judging whether there is a correlation between different target patterns based on the feature elements; multiplexing optical proximity correction results between the target patterns with the correlation; and 2. The optical proximity correction method of claim 1, wherein, performing optical proximity correction on the target patterns without the correlation.

3. The optical proximity correction method of claim 2, wherein, The feature elements of the target patterns include the length of each edge of the target patterns and the included angle between adjacent edges.

4. The optical proximity correction method of claim 1, wherein, The method for acquiring the feature elements of each target pattern based on the measurement origin comprises the following steps:

5. The optical proximity correction method of claim 4, wherein, acquiring the coordinates of each boundary intersection point of the target patterns based on the measurement origin; and 6. The optical proximity correction method of claim 1, wherein, acquiring the length of each edge of the target patterns and the included angle between adjacent edges based on the coordinates of each corner intersection point of the target patterns.

7. The optical proximity correction method of claim 6, wherein, The correlation between different target patterns includes direct geometric isomorphism and indirect geometric isomorphism.

8. The optical proximity correction method of claim 7, wherein, The direct geometric isomorphism refers to that two target patterns can be superimposed by translation.

9. The optical proximity correction method of claim 8, wherein, The indirect geometric isomorphism refers to that two target patterns need to be converted into other patterns and then superimposed by translation.

10. The optical proximity correction method of claim 8, wherein, The indirect geometric isomorphism includes rotational geometric isomorphism, mirror geometric isomorphism and mixed geometric isomorphism.

11. The optical proximity correction method of claim 6, wherein, The rotational geometric isomorphism refers to that any one of two target patterns is rotated and then superimposed by translation. The mirror geometric isomorphism refers to that any one of two target patterns is mirrored and then superimposed by translation. The mixed geometric isomorphism refers to that any one of two target patterns is mirrored and then superimposed by translation. Before judging whether there is a correlation between different target patterns based on the feature elements, the method further comprises the following steps: selecting a first original pattern from the plurality of target patterns; and comparing the remaining target patterns with the first original pattern. The method for selecting the first original pattern from the plurality of target patterns comprises the following steps: selecting the first original pattern based on the number of edges of the target patterns, wherein the number of edges of the target patterns is negatively correlated with the selection priority. When there are a plurality of target patterns with the same selection priority, the first original pattern is selected from the target patterns with the highest selection priority and the largest number of the same patterns. When there are a plurality of target patterns with the highest selection priority and the largest number of the same patterns, the first original pattern is selected from the target pattern with the first acquired coordinates based on the order of acquiring the coordinates of each target pattern based on the measurement origin. When there are a plurality of groups of target patterns with the highest selection priority and the largest number of the same patterns, the first original pattern is selected from the target pattern with the first acquired coordinates based on the order of acquiring the coordinates of each target pattern based on the measurement origin. When it is judged that there is no correlation between different target patterns, the target pattern compared with the first original pattern is selected as a second original pattern. The remaining target patterns are compared with the first original pattern and the second original pattern respectively.

12. The optical proximity correction method of claim 5, wherein, The method for judging the correlation between different target patterns based on the characteristic elements comprises: forming a characteristic list according to a preset arrangement order; when the characteristic elements of the characteristic list of two target patterns are completely identical, it is judged that the two target patterns have correlation; when the characteristic elements of the characteristic list of two target patterns are not completely identical, it is judged that the two target patterns do not have correlation.

13. The optical proximity correction method of claim 12, wherein, When the characteristic elements of the characteristic list of two target patterns are completely identical, the preset arrangement order of the characteristic elements is completely identical, and the two target patterns can be coincided by translation, it is judged that the two target patterns are direct geometric isomorphism.

14. The optical proximity correction method of claim 13, wherein, The method for multiplexing the optical proximity correction result between the target patterns with the correlation comprises: when it is judged that the two target patterns are direct geometric isomorphism, the optical proximity correction result of the target pattern as a primitive pattern is multiplexed to another target pattern.

15. The optical proximity correction method of claim 12, wherein, When the characteristic elements of the characteristic list of two target patterns are completely identical, the preset arrangement order of the characteristic elements is also completely identical, and the two target patterns cannot be coincided by translation, it is judged that the two target patterns are rotational geometric isomorphism.

16. The optical proximity correction method of claim 15, wherein, The method for multiplexing the optical proximity correction result between the target patterns with the correlation comprises: when it is judged that the two target patterns are rotational geometric isomorphism, the target pattern as a primitive pattern is rotated by a preset step angle successively until the two target patterns can be coincided by translation, and the rotation angle of the target pattern as a primitive pattern is obtained; the optical proximity correction result of the target pattern as a primitive pattern is rotated according to the rotation angle and then multiplexed to another target pattern.

17. The optical proximity correction method of claim 12, wherein, When the characteristic elements of the characteristic list of two target patterns are completely identical, the preset arrangement order of the characteristic elements is not completely identical, and the two target patterns can be coincided by translation after the target pattern as a primitive pattern is mirrored, it is judged that the two target patterns are mirror geometric isomorphism.

18. The optical proximity correction method of claim 12, wherein, When the characteristic elements of the characteristic list of two target patterns are completely identical, the preset arrangement order of the characteristic elements is not completely identical, and the two target patterns cannot be coincided by translation after the target pattern as a primitive pattern is mirrored, it is judged that the two target patterns are mixed geometric isomorphism.

19. The optical proximity correction method of claim 17, wherein, The method for multiplexing the optical proximity correction result between the target patterns with the correlation comprises: when it is judged that the two target patterns are mirror geometric isomorphism, the target pattern as a primitive pattern is mirrored until the two target patterns can be coincided by translation, and the symmetry axis of the mirror image of the target pattern as a primitive pattern is obtained; the optical proximity correction result of the target pattern as a primitive pattern is mirrored according to the symmetry axis and then multiplexed to another target pattern.

20. The optical proximity correction method of claim 18, wherein, The method for multiplexing optical proximity correction results between the target patterns with the correlation includes: after judging that two target patterns are mixed geometric isomorphism, mirroring and rotating the target pattern as a master pattern until the two target patterns can be coincided by translation, obtaining a mirror axis and a rotation angle of the mirrored target pattern as the master pattern; and mirroring the optical proximity correction result of the target pattern as the master pattern according to the mirror axis and rotating the optical proximity correction result according to the rotation angle to multiplex the optical proximity correction result onto another target pattern.

21. The optical proximity correction method of claim 5, 17, 18, 19, or 20, wherein, The mirror axis includes one or more of a first mirror axis and a second mirror axis, and the first mirror axis and the second mirror axis are perpendicular.

22. The optical proximity correction method of claim 11, wherein, After obtaining a feature element of each target pattern based on the measurement origin, and before judging whether different target patterns have correlation based on the feature element, the method further includes: dividing a plurality of target patterns into a plurality of pattern regions.

23. The optical proximity correction method of claim 22, wherein, The target pattern in each pattern region is compared with the first master pattern or the second master pattern at the same time.

24. The optical proximity correction method of claim 22, wherein, The division of a plurality of target patterns into a plurality of pattern regions includes: dividing the plurality of target patterns into the pattern regions according to functional modules, or dividing the plurality of target patterns into the pattern regions according to the similarity of pattern types.

25. A storage medium having stored thereon computer instructions, wherein, The computer instructions perform the steps of the method of any one of claims 1-24 when executed.

26. A terminal comprising a memory and a processor, said memory having stored thereon computer instructions capable of running on the processor, characterized in that, The processor performs the steps of the method of any one of claims 1-24 when executing the computer instructions.

Images