A method for manufacturing a semiconductor memory

By removing the first hard mask layer before removing the first and second sacrificial layers of the supporting stack during the fabrication process of the semiconductor memory, the problem of loss at the top of the supporting stack is solved, thereby improving the stability of the capacitor and the efficiency and reliability of the memory device.

CN118973256BActive Publication Date: 2026-07-07FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
Filing Date
2024-08-02
Publication Date
2026-07-07

AI Technical Summary

Technical Problem

In existing technologies, removing the first mask layer on the first and second regions of a semiconductor memory results in top loss of the supporting stacked layers, which in turn reduces the stability of the capacitor and the performance and reliability of the memory device.

Method used

After removing the first and second sacrificial layers in the support stack, the first hard mask layer is then removed to ensure that the support stack is protected by the first hard mask layer and avoids top loss. A capacitor is formed by creating a lower electrode, a dielectric layer, and an upper electrode.

Benefits of technology

This improves the stability of capacitors and the efficiency and reliability of storage devices, while avoiding the tipping problem of the supporting stacked layers.

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Abstract

The application provides a preparation method of a semiconductor memory, and is applied to the technical field of semiconductors. In the application, a stack structure layer with a through hole is formed first, then a lower electrode is formed in the through hole, and part of the support stack layer and part of the first hard mask layer are removed, and then the remaining first hard mask layer is removed to expose the support stack layer. Obviously, since the first hard mask layer in the application is removed after the first and second sacrificial layers in the support stack layer are removed, the support stack layer is protected by the first hard mask layer, avoiding top loss during the removal of the first and second sacrificial layers, and further avoiding the problem of tilting of the support stack layer, that is, the stability of the capacitor, the efficiency and reliability of the memory device are improved.
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