Charge pump circuit and control method for a charge pump circuit

CN118984055BActive Publication Date: 2026-08-28SUZHOU NOVOSENSE MICROELECTRONICS CO LTD
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Patent Information

Application Number
CN202411230449.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-09-03
Publication Date
2026-08-28
Estimated Expiration
2044-09-03

AI Technical Summary

Technical Problem

[0004]本申请的技术目的在于提供一种电荷泵电路及用于电荷泵电路的控制方法,以改善电荷泵输出电压不稳定的问题

Benefits of technology

[0008]通过本发明上述实施例中的一个实施例或多个实施例,至少可以实现如下技术效果:电荷泵电路中的调节电路能够根据电荷泵电路的输出电压和第一开关控制信号生成调节信号,输出到第一开关管的控制端,以改变第一开关管的导通电阻进而反馈调节输出电压,改善电荷泵输出电压不稳定的问题。

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Abstract

The application discloses a charge pump circuit and a control method thereof. The charge pump circuit comprises: an input end receiving a supply voltage; an output end providing an output voltage; a first switch tube having a first end, a second end and a control end, and when turned on, the current of the first switch tube flows from the first end to the second end; a first capacitor having a first end and a second end, the first end being coupled to the first end of the first switch tube or the second end of the first switch tube; an adjusting circuit receiving the output voltage and a first switch control signal, and generating an adjusting signal according to the output voltage and the first switch control signal to control the turn-on and turn-off of the first switch tube; and the adjusting signal controls the turn-on resistance of the first switch tube to adjust the output voltage. The adjusting circuit generates the adjusting signal according to the output voltage and the first switch control signal to control the turn-on resistance of the first switch tube, thereby feeding back the output voltage and improving the problem of unstable output voltage of the charge pump.
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Citation Information

Patent Citations

  • Temperature sensor and semiconductor memory device using the same

    US20080317097A1