Application of perfluorocopper phthalocyanine in the preparation of perovskite buried interface modification layers or perovskite layer buried interface modifiers

Abstract

This invention discloses the application of perfluorocopper phthalocyanine in the preparation of perovskite buried interface modification layers or perovskite layer buried interface modifiers. As a buried interface modifier, the perfluorocopper phthalocyanine of this invention can improve the interfacial contact between the perovskite layer and the hole transport layer. The highly fluorinated perfluorocopper phthalocyanine produces a more hydrophobic buried interface, promoting the longitudinal growth of perovskite grains, regulating the crystal growth and morphology of the perovskite layer, and thus more effectively accelerating carrier transport. Simultaneously, the strong electronegativity of fluorine atoms can effectively suppress harmful redox reactions between the perovskite layer and the hole transport layer, reducing non-radiative recombination, thereby achieving the goal of improving the photoelectric conversion efficiency and stability of solar cells.

Description

Technical Field

[0001] This invention belongs to the field of photovoltaic solar energy materials technology, specifically relating to the application of perfluorocopper phthalocyanine in the preparation of perovskite buried interface modification layers or perovskite layer buried interface modifiers. Background Art

[0002] Against the backdrop of ever-increasing energy demand, the limitations of traditional fossil fuels are becoming increasingly apparent. Fossil fuels not only suffer from low production safety issues, but also release large amounts of greenhouse gases during use, causing environmental pollution and climate change. Therefore, developing green and renewable energy sources to replace traditional fossil fuels has become a global focus. Solar energy, as a clean and renewable energy source, has been widely researched and applied due to its abundant resources and lack of depletion limitations. Currently, perovskite solar cells, due to their unique material properties, have increased power conversion efficiency from the initial 3.87% to 26.1%, demonstrating enormous development potential. These cells not only boast superior performance but also have low production costs and can be prepared using solution methods, further increasing their commercial viability.

[0003] However, existing perovskite solar cells still have certain shortcomings in terms of photoelectric conversion efficiency and stability, which limits their large-scale application. Therefore, improving the photoelectric conversion efficiency and stability of perovskite solar cells has significant practical implications and broad application prospects.

[0004] The molecular structure of perfluorocopper phthalocyanine contains a large number of fluorine atoms, which have strong electronegativity and can effectively protect surrounding chemical bonds from attack. Therefore, perfluorocopper phthalocyanine exhibits good chemical stability and remains stable under harsh environments such as high temperature, high pressure, strong acid, and strong alkali, and has important application value in the fields of electronics, optics, chemistry, and materials science. Existing technology (Fangchao L, Jianyu Y, Xufeng L, et al. ACS applied materials & interfaces, 2018, 10(49), 42397-42405.) discloses the introduction of perfluorocopper phthalocyanine into the perovskite layer of nip-type perovskite solar cells through an "anti-solvent" process. The treated perovskite solar cells achieved positive results, with the optimal output Voc increasing from 1.068V to 1.145V and the optimal conversion efficiency increasing from 18.7% to 20.2%. However, this improvement is not ideal compared to the current development of solar cell technology. Summary of the Invention

[0005] The primary objective of this invention is to overcome the problems of low photoelectric conversion efficiency and poor stability of existing perovskite solar cells, and to provide the application of perfluorocopper phthalocyanine in the preparation of perovskite buried interface modification layers or perovskite layer buried interface modifiers.

[0006] Another objective of this invention is to provide an application of perfluorocopper phthalocyanine as a perovskite buried interface modification layer in improving the photoelectric conversion efficiency of solar cells.

[0007] Another object of the present invention is to provide a solar cell.

[0008] Another object of the present invention is to provide a method for preparing a perovskite solar cell.

[0009] The above-mentioned technical objective of this invention is achieved through the following technical solution:

[0010] This invention seeks protection for the use of perfluorocopper phthalocyanine in the preparation of perovskite buried interface modification layers or perovskite layer buried interface modifiers.

[0011] Specifically, the perfluorophthalocyanine copper has the molecular structure shown in Formula 1:

[0012]

[0013] This invention creatively applies perfluorinated copper phthalocyanine as a perovskite buried interface modification layer between the hole transport layer and the perovskite layer in solar cells. Through research, the inventors discovered that the perfluorinated copper phthalocyanine of this invention has a phthalocyanine structure framework, possesses the properties of a p-type semiconductor and a high hole mobility, and can form a reasonable energy level gradient between the hole transport layer and the perovskite layer, which facilitates the effective transport of holes from the perovskite layer to the hole transport layer, while blocking the reverse flow of electrons, thereby reducing electron-hole pair recombination at the interface.

[0014] Furthermore, highly fluorinated perfluorophthalocyanine copper can generate a more hydrophobic buried interface, improving the interfacial contact between the perovskite layer and the hole transport layer, promoting the vertical growth of perovskite grains, and regulating the crystal growth and morphology of the perovskite layer, thus more conducive to accelerating carrier transport. Fluorine atoms have strong electronegativity, which can effectively suppress harmful redox reactions between the perovskite layer and the hole transport layer, reducing non-radiative recombination, thereby improving the photoelectric conversion efficiency and stability of solar cells.

[0015] In summary, the perfluorophthalocyanine copper of the present invention, as a perovskite buried interface modification layer, can significantly improve the interfacial contact between the perovskite layer and the hole transport layer, promote the longitudinal growth of perovskite grains, accelerate carrier transport, and at the same time, suppress harmful redox reactions between the perovskite layer and the hole transport layer, reduce non-radiative recombination, thereby improving the photoelectric conversion efficiency and stability of solar cells.

[0016] Furthermore, this invention seeks to protect the application of perfluorophthalocyanine copper as a perovskite buried interface modification layer in improving the photoelectric conversion efficiency of solar cells.

[0017] Preferably, perfluorocopper phthalocyanine and solvent are used in a mixture, and the concentration of perfluorocopper phthalocyanine in the mixture is 0.01 to 1.0 mg / mL.

[0018] Preferably, the perfluorophthalocyanine copper and the solvent are mixed by stirring and ultrasonication.

[0019] Specifically, the solvent is one or more of N,N-dimethylformamide, dimethyl sulfoxide, tetrahydrofuran, acetone, isopropanol, toluene, or chlorobenzene.

[0020] Preferably, the concentration of the perfluorocopper phthalocyanine is 0.1–1.0 mg / mL. More preferably, the concentration of the perfluorocopper phthalocyanine is 0.1–0.6 mg / mL.

[0021] Furthermore, this invention claims protection for a perovskite solar cell, which, from bottom to top, comprises a conductive glass layer, a hole transport layer, a perovskite buried interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer; wherein the perovskite buried interface modification layer is perfluorocopper phthalocyanine.

[0022] Preferably, the conductive glass layer is made of one or both of ITO conductive glass and FTO conductive glass; and / or

[0023] The hole transport layer is made of one or both of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] or nickel oxide; and / or

[0024] The perovskite layer is made of alkylammonium iodide and lead halide; and / or

[0025] The electron transport layer is made of a C60 derivative; and / or

[0026] The material of the metal electrode layer is one or more of silver, gold, or copper.

[0027] The alkylammonium iodide is one or more selected from methylammonium iodide, methyltriethylammonium iodide, dimethyldiethylammonium iodide, nonylammonium iodide, or dodecyldimethylethylammonium iodide; and / or

[0028] The lead halide is one or more of lead iodide, lead chloride, or lead bromide; and / or

[0029] Preferably, the mass ratio of alkylammonium iodide to lead halide is 2.8 to 3.2:1.

[0030] The C60 derivative is one or more of [6,6]-phenyl-C61-butyrate methyl ester, [6,6]-thienyl-C61-butyrate methyl ester, [6,6]-phenyl-C61-butyrate n-octyl ester or [6,6]-phenyl-C61-butyrate dodecyl ester.

[0031] Furthermore, this invention claims protection for a method for fabricating a perovskite solar cell, comprising the following steps:

[0032] S1: Prepare a hole transport layer on a conductive glass layer;

[0033] S2: Prepare a perovskite buried interface modification layer on the hole transport layer in step S1;

[0034] S3: Prepare a perovskite layer on the perovskite buried interface modification layer in step S2;

[0035] S4: An electron transport layer is prepared on the perovskite layer in step S3;

[0036] S5: A metal electrode layer is prepared on the electron transport layer in step S4 to obtain a perovskite solar cell.

[0037] Specifically, step S1 is as follows: First, the conductive glass is pretreated by alternating ultrasonic cleaning with deionized water, acetone and isopropanol, then dried and treated with ultraviolet ozone. Then, a hole transport layer solution prepared from the hole transport layer material is spin-coated onto the surface of the conductive glass to obtain the hole transport layer.

[0038] Specifically, step S2 involves spin-coating a solution containing copper perfluorophthalocyanine onto the hole transport layer and heating it to form a film, thereby obtaining a perovskite buried interface modification layer.

[0039] Specifically, step S3 involves spin-coating a perovskite solution prepared from the material of the perovskite layer onto the surface of the perovskite subsurface modification layer to obtain the perovskite layer.

[0040] Further, the solvent of the perovskite solution is one or more selected from N,N-dimethylformamide, dimethyl sulfoxide, tetrahydrofuran, acetone, isopropanol, toluene, or chlorobenzene. Further, the mass ratio of solvent to solute in the perovskite solution is 2.5–3.5:1.

[0041] Specifically, step S4 involves spin-coating an electron transport layer solution prepared from the electron transport layer material onto the surface of the perovskite layer, followed by spin-coating 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bath copper spirit) to obtain the electron transport layer.

[0042] Specifically, step S5 involves placing the electron transport layer into a vacuum coating machine and evaporating the metal electrode layer to obtain a perovskite solar cell.

[0043] The present invention has the following beneficial effects:

[0044] This invention uses perfluorocopper phthalocyanine as a perovskite buried interface modification layer, which can improve the interfacial contact between the perovskite layer and the hole transport layer, generate a more hydrophobic buried interface, promote the longitudinal growth of perovskite grains, regulate the crystal growth and morphology of the perovskite layer, and is more conducive to accelerating carrier transport. At the same time, it effectively suppresses harmful redox reactions between the perovskite layer and the hole transport layer, reduces non-radiative recombination, and achieves the goal of improving the photoelectric conversion efficiency of perovskite solar cells. Attached Figure Description

[0045] Figure 1 The normalized efficiency-time curves are for the perovskite solar cells of Example 1 and Comparative Example 1.

[0046] Figure 2 The images show the steady-state photoluminescence spectra of the perovskite layers in Example 1 and Comparative Example 1.

[0047] Figure 3 The transient photoluminescence spectra of the perovskite layers in Example 1 and Comparative Example 1 are shown.

[0048] Figure 4 The diagram shows the contact angle of the hole transport layer in Example 1 and Comparative Example 1. Detailed Implementation

[0049] The present invention is further illustrated below with reference to specific embodiments. These embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Experimental methods in the following embodiments that do not specify specific conditions are generally performed under conventional conditions in the art or as recommended by the manufacturer; the raw materials and reagents used, unless otherwise specified, are all commercially available from the conventional market. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention are within the scope of protection claimed by the present invention.

[0050] Example 1

[0051] A perovskite layer buried interface modifier for solar cells includes a perfluorocopper phthalocyanine solution with a concentration of 0.2 mg / mL; its preparation method includes the following steps:

[0052] Add 0.2 mg of perfluorocopper phthalocyanine to 1 mL of chlorobenzene, stir magnetically overnight, and then sonicate for 15 min to form a perfluorocopper phthalocyanine solution, which is the interface modifier for the buried perovskite layer of solar cells.

[0053] A perovskite solar cell, the preparation method of which includes the following steps:

[0054] S1: The ITO conductive glass was ultrasonically cleaned for 15 minutes with deionized water, acetone and isopropanol alternately, and then dried. It was then placed in a UV ozone cleaner for UV ozone treatment. After cleaning, 30 μL of nickel oxide nano-ink with a concentration of 10 mg / mL was spin-coated on the surface of the conductive glass layer. After spin-coating, it was transferred to a heating stage for heating to obtain a hole transport layer. Then it was quickly transferred to a glove box in a nitrogen atmosphere.

[0055] S2: Spin-coat 40 μL of solar cell perovskite layer buried interface modifier onto the surface of the hole transport layer, then transfer it to a heating stage to heat and form a film to remove the solvent, thus obtaining the perovskite buried interface modifier layer.

[0056] S3: First, spin-coat 60 μL of perovskite solution onto the surface of the perovskite buried interface modification layer, then add toluene dropwise, and then transfer to a heating stage for heating to obtain the perovskite layer; wherein, the solvent of the perovskite solution is N,N-dimethylformamide, the solute is methylammonium iodide and lead iodide, the mass ratio is 3:1, and the mass of methylammonium iodide and lead iodide accounts for 37.54% of the total mass of the perovskite solution;

[0057] S4: Dissolve 23 mg of the electron transport layer material [6,6]-phenyl-C61-butyrate methyl ester (PC61BM) in 1 mL of chlorobenzene to prepare a PC61BM electron transport layer solution. Take 35 μL of the PC61BM electron transport layer solution and spin-coat it onto the surface of the perovskite modified layer. After spin-coating, transfer it to a heating stage for heating. Then spin-coat 45 μL of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline with a concentration of 2.5 mg / mL to obtain the electron transport layer.

[0058] S5: Place the electron transport layer into a vacuum coating machine, evacuate the vacuum, place the silver metal source into a tungsten boat, and deposit the silver metal electrode to obtain the perovskite solar cell.

[0059] Example 2

[0060] The difference between this embodiment and Example 1 is that the concentration of perfluorophthalocyanine copper in the perfluorophthalocyanine copper solution is 0.1 mg / mL.

[0061] Example 3

[0062] The difference between this embodiment and Embodiment 1 is that the concentration of perfluorophthalocyanine copper in the perfluorophthalocyanine copper solution is 0.4 mg / mL.

[0063] Example 4

[0064] The difference between this embodiment and Example 1 is that the concentration of perfluorophthalocyanine copper in the perfluorophthalocyanine copper solution is 0.6 mg / mL.

[0065] Example 5

[0066] The difference between this embodiment and Example 1 is that the concentration of perfluorophthalocyanine copper in the perfluorophthalocyanine copper solution is 0.8 mg / mL.

[0067] Example 6

[0068] The difference between this embodiment and Example 1 is that the concentration of perfluorophthalocyanine copper in the perfluorophthalocyanine copper solution is 1.0 mg / mL.

[0069] Comparative Example 1

[0070] The difference between this comparative example and Example 1 is that it does not contain a perovskite modification layer.

[0071] Comparative Example 2

[0072] This comparative example provides a perovskite solar cell with a perovskite layer treated by anti-solvent, and its preparation method includes the following steps:

[0073] The above-mentioned method for preparing perovskite solar cells includes the following steps:

[0074] S1: The ITO conductive glass was ultrasonically cleaned for 15 minutes with deionized water, acetone and isopropanol alternately, and then dried. It was then placed in a UV ozone cleaner for UV ozone treatment. After cleaning, 30 μL of nickel oxide nano-ink with a concentration of 10 mg / mL was spin-coated on the surface of the conductive glass layer. After spin-coating, it was transferred to a heating stage for heating to obtain a hole transport layer. Then it was quickly transferred to a glove box in a nitrogen atmosphere.

[0075] S2: First, spin-coat 60 μL of perovskite solution onto the surface of the hole transport layer, then add 0.2 mg / mL perfluorophthalocyanine copper solution as an antisolvent, and then transfer to a heating stage for heating to obtain the perovskite layer; wherein, the solvent of the perovskite solution is N,N-dimethylformamide, the mass ratio of methylammonium iodide and lead iodide is 3:1, and the mass of methylammonium iodide and lead iodide accounts for 37.54% of the total mass of the perovskite solution;

[0076] S4: Dissolve 23 mg of the electron transport layer material [6,6]-phenyl-C61-butyrate methyl ester (PC61BM) in 1 mL of chlorobenzene to prepare a PC61BM electron transport layer solution. Take 35 μL of the PC61BM electron transport layer solution and spin-coat it onto the surface of the perovskite modified layer. After spin-coating, transfer it to a heating stage for heating. Then spin-coat 45 μL of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline with a concentration of 2.5 mg / mL to obtain the electron transport layer.

[0077] S5: Place the electron transport layer into a vacuum coating machine, evacuate the vacuum, place the silver metal source into a tungsten boat, and deposit the silver metal electrode to obtain the perovskite solar cell.

[0078] Performance testing

[0079] The current density versus voltage (JV) characteristic curves, i.e. short-circuit current versus open-circuit voltage curves, of the perovskite solar cells of Examples 1-6 and Comparative Examples 1-2 were measured.

[0080] The perovskite solar cells of Example 1 and Comparative Example 1 were subjected to maximum power output stability tests in an environment with air, room temperature, relative humidity of 70±5%, and darkness, i.e., the normalized efficiency-time curves were measured.

[0081] Steady-state photoluminescence analysis and transient photoluminescence analysis were performed on the perovskite layers of Example 1 and Comparative Example 1.

[0082] Contact angle tests were performed on the hole transport layers of Example 1 and Comparative Example 1.

[0083] The experimental results are shown below:

[0084] Table 1. Test results of current density and voltage characteristic curves.

[0085] sample Open circuit voltage (V) <![CDATA[Short-circuit current (mA / cm 2 )]]> Photoelectric conversion efficiency (%) Fill factor (%) Comparative Example 1 1.14 24.18 21.50 77.98 Comparative Example 2 1.14 24.28 21.53 77.37 Example 1 1.17 25.18 24.12 81.28 Example 2 1.15 24.62 22.96 80.68 Example 3 1.16 24.63 22.69 79.46 Example 4 1.16 24.31 22.64 79.83 Example 5 1.16 24.12 21.91 77.84 Example 6 1.16 24.04 21.93 78.11

[0086] As shown in Table 1, the application of perfluorocopper phthalocyanine as a perovskite buried interface modification layer in this invention can increase the photoelectric conversion efficiency of solar cells from 21.50% to 21.91-24.12%. This indicates that perfluorocopper phthalocyanine can effectively suppress nonradiative recombination and harmful redox reactions between the hole transport layer and the perovskite active layer, improve the interfacial contact between the hole transport layer and the perovskite active layer, and thus improve the photoelectric conversion efficiency of perovskite solar cells.

[0087] The concentration of perfluorocopper phthalocyanine in Examples 1 to 4 was 0.1 to 0.6 mg / mL. Perovskite solar cells at this concentration exhibited superior photoelectric conversion efficiency, ranging from 22.64% to 24.12%. Among them, Example 1 showed the best performance, with a photoelectric conversion efficiency of 24.12%.

[0088] The photoelectric conversion efficiency of the perovskite solar cells in Examples 5 and 6 is slightly lower than that of Example 4 (22.64%), but higher than that of Comparative Example 1 (21.50%) and Comparative Example 2 (21.53%).

[0089] Furthermore, the photoelectric conversion efficiency of the perovskite solar cell in Comparative Example 2 did not change significantly compared to Comparative Example 1. This indicates that using perfluorocopper phthalocyanine as an antisolvent has limited effect on improving the photoelectric conversion efficiency of perovskite solar cells, while using perfluorocopper phthalocyanine as a buried interface modifier is more conducive to improving the photoelectric conversion efficiency of perovskite solar cells.

[0090] Figure 1 The image shows the normalized efficiency-time curves for the perovskite solar cells of Example 1 and Comparative Example 1. From... Figure 1 It can be seen that after 670 hours of maximum power output stability testing of perovskite solar cells, the power conversion efficiency (PCE) of Comparative Example 1, which does not contain the solar cell perovskite layer buried interface modifier, decreased by 58%. In contrast, the PCE of Example 1, which used the solar cell perovskite buried interface modifier, decreased by only 16% after 1000 hours of maximum power output stability testing. This indicates that the perfluorophthalocyanine copper (PFCA) buried interface modifier of the present invention produces a more hydrophobic buried interface, promoting the longitudinal growth of perovskite grains, regulating the crystal growth and morphology of the perovskite layer, and thus being more conducive to carrier transport. Simultaneously, it effectively suppresses harmful redox reactions between the perovskite layer and the hole transport layer, reducing non-radiative recombination and achieving the goal of improving the stability of the solar cell.

[0091] Figure 2 The images show the steady-state photoluminescence spectra of the perovskite layers in Example 1 and Comparative Example 1. From... Figure 2 It can be seen that the fluorescence intensity of Example 1 is weaker than that of Comparative Example 1. This indicates that the perfluorocopper phthalocyanine, a perovskite layer interface modifier of the present invention, can effectively suppress nonradiative recombination at the hole transport layer and perovskite interface, improve the extraction and transport rate of charge carriers, and thus improve the photoelectric conversion efficiency and stability of the solar cell.

[0092] Figure 3 The images show the transient photoluminescence spectra of the perovskite layers in Example 1 and Comparative Example 1. From... Figure 3 It can be seen that the average carrier lifetime of Example 1 is shorter than that of Comparative Example 1. This indicates that the perfluorocopper phthalocyanine interface modifier of the perovskite layer of the solar cell of the present invention can regulate the crystal growth and morphology of the perovskite layer, thereby accelerating the extraction and transport of carriers, and thus improving the photoelectric conversion efficiency and stability of the solar cell.

[0093] Figure 4 The image shows the contact angle diagrams of the hole transport layer in Example 1 and Comparative Example 1. From... Figure 4It can be seen that the contact angle of Example 1 is greater than that of Comparative Example 1. This indicates that the perfluorophthalocyanine copper of the perovskite layer buried interface modifier of the present invention can produce a more hydrophobic buried interface, promote the longitudinal growth of perovskite grains, regulate the crystal growth and morphology of the perovskite layer, thereby accelerating the transport of charge carriers, and is also more conducive to improving the photoelectric conversion efficiency and stability of the solar cell.

[0094] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. The application of perfluorocopper phthalocyanine in the preparation of perovskite buried interface modification layers or perovskite layer buried interface modifiers, characterized in that, The perfluorocopper phthalocyanine and solvent are mixed and used, with the concentration of perfluorocopper phthalocyanine in the mixture being 0.1~0.6 mg / mL; the mixture is used by spin-coating between the hole transport layer and the perovskite layer; The hole transport layer is made of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]; the perovskite layer is made of methylammonium iodide and lead iodide. The perfluorophthalocyanine copper has the molecular structure shown in Formula 1: Formula 1.

2. The application according to claim 1, characterized in that, The solvent is N,N - One or more of dimethylformamide, dimethyl sulfoxide, tetrahydrofuran, acetone, isopropanol, toluene, or chlorobenzene.

3. The application according to claim 1, characterized in that, The perfluorophthalocyanine copper and solvent are mixed by stirring and sonication.

4. A perovskite solar cell, characterized in that, From bottom to top, it comprises a conductive glass layer, a hole transport layer, a perovskite buried interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer; the perovskite buried interface modification layer is perfluorocopper phthalocyanine. The perfluorocopper phthalocyanine and solvent are mixed and used, with the concentration of perfluorocopper phthalocyanine in the mixture being 0.1~0.6 mg / mL; The hole transport layer is made of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]; the perovskite layer is made of methylammonium iodide and lead iodide. The perfluorophthalocyanine copper has the molecular structure shown in Formula 1: Formula 1.

5. The perovskite solar cell according to claim 4, characterized in that, The conductive glass layer is made of one or both of ITO conductive glass and FTO conductive glass; and / or The electron transport layer is made of a C60 derivative; and / or The material of the metal electrode layer is one or more of silver, gold, or copper.

6. The perovskite solar cell according to claim 5, characterized in that, The C60 derivative is one or more of [6,6]-phenyl-C61-butyrate methyl ester, [6,6]-thienyl-C61-butyrate methyl ester, [6,6]-phenyl-C61-butyrate n-octyl ester or [6,6]-phenyl-C61-butyrate dodecyl ester.

7. The method for preparing a perovskite solar cell according to any one of claims 4 to 6, characterized in that, Includes the following steps: S1: Prepare a hole transport layer on a conductive glass layer; S2: Prepare a perovskite buried interface modification layer on the hole transport layer in step S1; S3: Prepare a perovskite layer on the perovskite buried interface modification layer in step S2; S4: An electron transport layer is prepared on the perovskite layer in step S3; S5: A metal electrode layer is prepared on the electron transport layer in step S4 to obtain a perovskite solar cell.

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