Intake Structure and Semiconductor Process Equipment

Abstract

The present invention provides an air intake structure and a semiconductor process equipment. The air intake structure is used for a semiconductor process chamber and includes an air intake main pipe, an air intake head and a sealing adapter assembly; the air intake main pipe is communicated with the air intake head to convey process gas into the process chamber through the air intake head; the sealing adapter assembly is arranged outside the air intake main pipe, and the air intake main pipe and the air intake head perform movably sealing between the air intake main pipe and the process chamber through the sealing adapter assembly so as to be able to move relative to the process chamber. The air intake structure and the semiconductor process equipment provided by the present invention can improve the air intake uniformity and sealing performance of the semiconductor process chamber, and can increase the optimized design space of the dielectric window and the upper electrode assembly, so that the distribution uniformity of the process gas in the process chamber can be improved, and the optimized design space for the etching result can be increased, thereby improving the semiconductor process result.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular, to an air inlet structure and a semiconductor processing apparatus. Background Art

[0002] In a semiconductor etching (e.g., Inductively Coupled Plasma (ICP) etching) apparatus, a dielectric window, an air inlet structure, and an upper electrode assembly are disposed on the top of a process chamber. The dielectric window covers the top of the process chamber. The air inlet structure is configured to deliver process gas into the process chamber. The upper electrode assembly is disposed above the dielectric window and configured to feed radio frequency into the process chamber to form plasma by exciting the process gas with the radio frequency, so as to etch a wafer in the process chamber by means of the plasma. In semiconductor processing, the distribution uniformity of the process gas in the process chamber affects the etching uniformity of the wafer.

[0003] In the prior art, the air inlet modes of semiconductor apparatuses can be divided into a central air inlet mode and a central-edge air inlet mode. In the central air inlet mode, a central flow equalizing structure (e.g., a showerhead) or at least one central nozzle is disposed at the center of the top of the process chamber to deliver process gas into the semiconductor process chamber. In the central-edge air inlet mode, at least one central nozzle is disposed at the center of the top of the process chamber, and an edge flow equalizing structure (e.g., a flow equalizing cavity) or at least one edge nozzle is disposed at the edge of the top of the process chamber to deliver process gas into the semiconductor process chamber.

[0004] However, for the central flow equalizing structure, it is generally a multi-layer disk-like structure. For the edge flow equalizing structure, it is generally a multi-layer ring-like structure. Moreover, the multi-layer structure is usually connected by welding and disposed through the top of the process chamber. The large-area welding of the multi-layer structure easily causes deformation of the multi-layer structure and poor sealing, resulting in poor air inlet uniformity and sealing performance of the process chamber, and then poor distribution uniformity of the process gas in the process chamber, and further poor etching results. In addition, for the central flow equalizing structure or at least one central nozzle disposed at the center of the top of the process chamber, it affects the design space of the dielectric window and the upper electrode assembly, resulting in a small optimization design space for the dielectric window and the upper electrode assembly, and further a small optimization design space for the etching results. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and provides an air intake structure and a semiconductor process equipment, which can improve the air intake uniformity and sealing performance of the semiconductor process chamber, and can increase the optimization design space of the dielectric window and the upper electrode assembly, so as to improve the distribution uniformity of the process gas in the process chamber, and can increase the optimization design space for the etching result, and further improve the semiconductor process result.

[0006] To achieve the object of the present invention, an air intake structure for a semiconductor process chamber is provided. The air intake structure includes an air intake main pipe, an air intake head and a sealing adapter assembly.

[0007] The air intake main pipe is communicated with the air intake head to convey process gas into the process chamber through the air intake head.

[0008] The sealing adapter assembly is arranged outside the air intake main pipe. The air intake main pipe and the air intake head are movably sealed between the air intake main pipe and the process chamber through the sealing adapter assembly so as to be movable relative to the process chamber.

[0009] Optionally, the air intake structure further includes a rotation driving assembly. The rotation driving assembly is connected with the air intake head through the air intake main pipe and is used to drive the air intake head to rotate by driving the air intake main pipe to rotate.

[0010] Optionally, the sealing adapter assembly includes a sealing adapter body and a rolling bearing. The rolling bearing is sleeved outside the air intake main pipe and is arranged circumferentially in the sealing adapter body along the sealing adapter body.

[0011] Optionally, the air intake head is in an arc-shaped long strip shape. The end of the air intake head protrudes relative to the middle of the air intake head in the air intake direction of the air intake structure. The air intake head is provided with a plurality of air inlets, and the plurality of air inlets are arranged at intervals in the extending direction of the air intake head.

[0012] Optionally, the air intake structure further includes an air intake adapter and an air intake source pipe. One end of the air intake source pipe is used to communicate with a process gas source, and the other end of the air intake source pipe is communicated with the air intake main pipe through the air intake adapter. The air intake main pipe can rotate relative to the air intake adapter.

[0013] Optionally, the intake structure further includes a flow splitting component, which is located downstream of the seal adapter assembly in the intake direction of the intake structure. The intake main pipe communicates with the intake head through the flow splitting component. The flow splitting component includes a main flow portion and a plurality of branch flow portions. The main flow portion communicates with the intake main pipe and the intake head respectively, and the branch flow portions communicate with the main flow portion and the intake head respectively. The flow splitting component is used to split and convey the process gas into the intake head.

[0014] Optionally, the intake structure further includes a telescopic drive assembly, which is connected to the intake head through the intake main pipe and is used to drive the intake main pipe to move axially to drive the intake head to move axially.

[0015] Optionally, the seal adapter assembly further includes a seal adapter body and a linear bearing. The linear bearing is sleeved outside the intake main pipe and is arranged circumferentially in the seal adapter body along the seal adapter body.

[0016] Optionally, the intake main pipe includes a first pipe section, a second pipe section, and a telescopic pipe section that can expand and contract by itself. The first pipe section is used to communicate with a process gas source. The second pipe section communicates with the intake head and is communicated with the first pipe section through the telescopic pipe section. The seal adapter assembly is arranged outside the second pipe section, and the telescopic drive assembly is arranged on the second pipe section and is located upstream of the seal adapter assembly in the intake direction of the intake structure.

[0017] The present invention also provides a semiconductor process equipment, which includes a process chamber and a plurality of the intake structures provided by the present invention. The plurality of intake structures are arranged at intervals in the circumferential direction of the process chamber.

[0018] Optionally, each intake structure is inclined relative to the process chamber, so that the intake heads of the plurality of intake structures approach the center of the process chamber.

[0019] Optionally, at least part of the seal adapter assembly is embedded in the top wall of the process chamber, and the intake head is located inside the process chamber.

[0020] The present invention has the following beneficial effects:

[0021] The intake structure provided by the present invention is provided with a sealing adapter assembly outside the main intake pipe. Since the sealing adapter assembly can seal the main intake pipe and the process chamber movably, the main intake pipe and the intake head communicating with the main intake pipe can maintain the seal with the process chamber in a state of moving relative to the process chamber. On the one hand, the main intake pipe and the intake head can be rotated in the semiconductor process. On the other hand, the main intake pipe and the intake head can be moved into or out of the process chamber in the semiconductor process. On the other hand, multiple intake structures can be arranged at intervals in the circumferential direction of the process chamber, so that the process gas entering the process chamber through the intake head can be distributed at the center and the edge in the process chamber, and the uniformity of the distribution of the process gas entering the process chamber in the process chamber can be adjusted, and the uniformity of the distribution of the process gas above the wafer in the process chamber can be adjusted. Compared with the prior art, there is no need to use the central flow equalizing structure of the multi-layer disc structure and the edge flow equalizing structure of the multi-layer ring structure to distribute the process gas entering the process chamber at the center and the edge in the process chamber, and there is no need to set a central flow equalizing structure or at least one central nozzle at the center of the top of the process chamber to transport the process gas into the semiconductor process chamber. Therefore, the problems caused by the large-area welding of the multi-layer structure can be avoided, and the influence of the central flow equalizing structure or at least one central nozzle on the design space of the dielectric window and the upper electrode assembly can be avoided. Subsequently, the intake uniformity and sealing performance of the semiconductor process chamber can be improved, and the optimized design space of the dielectric window and the upper electrode assembly can be increased. Subsequently, the uniformity of the distribution of the process gas in the process chamber can be improved, and the optimized design space for optimizing the etching result can be increased. Furthermore, the semiconductor process result can be improved.

[0022] The semiconductor process equipment provided by the present invention is provided with multiple intake structures as provided by the present invention at intervals in the circumferential direction of the process chamber, and the process gas is respectively transported into the process chamber by means of the multiple intake structures, so that the intake uniformity and sealing performance of the semiconductor process chamber can be improved, and the optimized design space of the dielectric window and the upper electrode assembly can be increased. Subsequently, the uniformity of the distribution of the process gas in the process chamber can be improved, and the optimized design space for optimizing the etching result can be increased. Furthermore, the semiconductor process result can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic structural diagram of an intake structure provided by an embodiment of the present invention;

[0024] Figure 2 It is a schematic structural diagram of the intake head of an intake structure provided by an embodiment of the present invention;

[0025] Figure 3Schematic structural diagram of the intake main pipe and the sealing adapter assembly of an intake structure provided by an embodiment of the present invention;

[0026] Figure 4 Schematic front view structure diagram of an intake structure provided by an embodiment of the present invention and the intake head of a semiconductor process equipment when it is far from the wafer;

[0027] Figure 5 Schematic top view structure diagram of an intake structure provided by an embodiment of the present invention and the intake head of a semiconductor process equipment when it is far from the wafer;

[0028] Figure 6 Schematic front view structure diagram of an intake structure provided by an embodiment of the present invention and the intake head of a semiconductor process equipment when it is close to the wafer;

[0029] Figure 7 Schematic top view structure diagram of an intake structure provided by an embodiment of the present invention and the intake head of a semiconductor process equipment when it is close to the wafer;

[0030] Figure 8 Schematic front view of the air flow field when a semiconductor device in the prior art intakes air;

[0031] Figure 9 Schematic top view of the air flow field when a semiconductor device in the prior art intakes air;

[0032] Figure 10 Schematic front view of the air flow field when a semiconductor device provided by an embodiment of the present invention intakes air;

[0033] Figure 11 Schematic top view of the air flow field when a semiconductor device provided by an embodiment of the present invention intakes air;

[0034] Figure 12 Schematic diagram of the velocity comparison of the air flow field when a semiconductor device in the prior art and a semiconductor device provided by an embodiment of the present invention intake air;

[0035] Figure 13 Schematic diagram of the pressure comparison of the air flow field when a semiconductor device in the prior art and a semiconductor device provided by an embodiment of the present invention intake air;

[0036] Figure 14 Schematic diagram of the density comparison of the air flow field when a semiconductor device in the prior art and a semiconductor device provided by an embodiment of the present invention intake air;

[0037] Explanation of reference numerals:

[0038] 1 - Intake structure; 11 - Rotary drive assembly; 111 - Drive source; 112 - Fitting; 113 - Transmission member; 114 - Drive part; 12 - Intake head; 121 - Intake port; 13 - Intake main pipe; 131 - First pipe section; 132 - Second pipe section; 133 - Telescopic pipe section; 134 - Third pipe section; 14 - Intake adapter; 15 - Intake source pipe; 16 - Rotary bearing; 17 - Telescopic drive assembly; 18 - Sealing adapter assembly; 181 - Sealing adapter body; 182 - Rolling bearing; 183 - Linear bearing; 184 - Magnetic fluid sealing structure; 185 - End cover; 19 - Diverting component; 191 - Main stream part; 192 - Branch stream part; 200 - Process chamber; 201 - Dielectric window; 202 - Upper electrode assembly; 203 - Lower electrode assembly; 300 - Wafer. Detailed implementation manners

[0039] To enable those skilled in the art to better understand the technical solutions of the present invention, the intake structure and semiconductor process equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0040] As Figures 4 - 7 shown, an intake structure 1 provided in an embodiment of the present invention is used for a semiconductor process chamber 200. The intake structure 1 includes an intake main pipe 13, an intake head 12, and a sealing adapter assembly 18. The intake main pipe 13 is communicated with the intake head 12 to convey process gas into the process chamber 200 through the intake head 12. The sealing adapter assembly 18 is arranged outside the intake main pipe 13. The intake main pipe 13 and the intake head 12 perform movable sealing between the intake main pipe 13 and the process chamber 200 through the sealing adapter assembly 18 so as to be able to move relative to the process chamber 200.

[0041] For the intake structure 1 provided in the embodiment of the present invention, by arranging the sealing adapter assembly 18 outside the intake main pipe 13, since the sealing adapter assembly 18 can perform movable sealing between the intake main pipe 13 and the process chamber 200, the intake main pipe 13 and the intake head 12 communicated with the intake main pipe 13 can maintain the sealing with the process chamber 200 in a state of moving relative to the process chamber 200. In this way, on the one hand, the intake main pipe 13 and the intake head 12 can be rotated in semiconductor processes. On the other hand, the intake main pipe 13 and the intake head 12 can be moved into the process chamber or moved out of the process chamber in semiconductor processes. On the third hand, a plurality of intake structures 1 can be arranged at intervals in the circumferential direction of the process chamber 200, so that the process gas entering the process chamber 200 through the intake head 12 can be distributed at the center and the edge in the process chamber 200 (such as Figure 6 and Figure 7As shown in the figure, it can adjust the uniformity of the distribution of process gas entering the process chamber 200 within the process chamber 200. Compared with the prior art, it does not require a central flow equalizing structure of a multi-layer disc structure and an edge flow equalizing structure of a multi-layer annular structure to make the process gas entering the process chamber 200 distributed in the center and edge of the process chamber 200, and does not require a central flow equalizing structure or at least one central nozzle to be arranged at the top center of the process chamber 200 to transport process gas into the semiconductor process chamber 200. Thus, it can avoid problems caused by large-area welding of multi-layer structures, and can avoid the influence of the central flow equalizing structure or at least one central nozzle on the design space of the dielectric window 201 and the upper electrode assembly 202. Subsequently, it can improve the intake air uniformity and sealing performance of the semiconductor process chamber 200, and can increase the optimization design space of the dielectric window 201 and the upper electrode assembly 202. Subsequently, it can improve the uniformity of the distribution of process gas in the process chamber 200, and can increase the space for optimizing the etching result, thereby improving the semiconductor process result.

[0042] As Figure 1 、 Figures 4 - 7 shown, in an embodiment of the present invention, the intake structure 1 may further include a rotation driving assembly 11. The rotation driving assembly 11 is connected to the intake head 12 through the intake main pipe 13, and is used to drive the intake main pipe 13 to rotate, so as to drive the intake head 12 to rotate.

[0043] That is to say, the rotation driving assembly 11 can be connected to the intake head 12 by connecting with the intake main pipe 13. The rotation driving assembly 11 can drive the intake main pipe 13 to rotate, so that the intake head 12 rotates with the rotation of the intake main pipe 13.

[0044] Optionally, the rotation driving assembly 11 may be located upstream of the sealing adapter assembly 18 in the intake direction of the intake structure 1.

[0045] In practical applications, the sealing adapter assembly 18 may be arranged in the chamber wall of the process chamber 200. By making the rotation driving assembly 11 located upstream of the sealing adapter assembly 18 in the intake direction of the intake structure 1, the rotation driving assembly 11 can be arranged outside the process chamber 200, thus facilitating the arrangement of the rotation driving assembly 11.

[0046] As Figure 1 shown, optionally, the rotation driving assembly 11 may include a mating part 112, a transmission part 113 and a driving source 111. The mating part 112 is connected to the intake main pipe 13, and the driving part 114 of the driving source 111 is connected to the mating part 112 through the transmission part 113. The driving part 114 of the driving source 111 is used to drive the transmission part 113 to rotate, so as to drive the intake main pipe 13 to rotate.

[0047] In practical applications, the drive source 111 provides a rotational driving force to the transmission member 113 through its driving portion 114. By driving the transmission member 113 to rotate, the mating member 112 rotates with the rotation of the transmission member 113, so that the intake main pipe 13 rotates with the rotation of the mating member 112.

[0048] Optionally, the transmission member 113 may include a transmission belt, and the mating member 112 may include a mating pulley. The mating pulley is sleeved on the intake main pipe 13, and the transmission belt is respectively sleeved on the mating pulley and the driving portion 114 of the drive source 111.

[0049] Optionally, the drive source 111 may include a rotary motor, and the driving portion 114 may include a rotary output shaft of the rotary motor.

[0050] As Figure 3 shown, in an embodiment of the present invention, the sealing adapter assembly 18 may include a sealing adapter body 181 and a rolling bearing 182. The rolling bearing 182 is sleeved outside the intake main pipe 13 and is circumferentially arranged inside the sealing adapter body 181 along the sealing adapter body 181.

[0051] That is to say, the rolling bearing 182 is arranged inside the sealing adapter body 181 and is circumferentially arranged along the sealing adapter body 181. The intake main pipe 13 passes through the sealing adapter body 181 and passes through the rolling bearing 182. Such a design can enable the intake main pipe 13 to rotate relative to the sealing adapter body 181 when being rotationally driven by the rotation drive assembly 11.

[0052] As Figure 1 and Figure 2 shown, in an embodiment of the present invention, the intake head 12 may be in an arc-shaped long strip shape. The end of the intake head 12 protrudes relative to the middle of the intake head 12 in the intake direction of the intake structure 1. The intake head 12 is provided with a plurality of intake ports 121, and the plurality of intake ports 121 are spaced apart in the extending direction of the intake head 12.

[0053] In practical applications, the intake head 12 can respectively deliver process gases into the process chamber 200 through a plurality of intake ports 121. By making the intake head 12 in an arc-shaped long strip and arranging a plurality of intake ports 121 at intervals in the extending direction of the intake head 12, when the intake head 12 is driven to rotate by the rotation driving assembly 11, the process gases respectively delivered into the process chamber 200 through the plurality of intake ports 121 can be distributed within a circumferential range, so that the process gases entering the process chamber 200 through the intake head 12 can be more evenly distributed at the center and the edge of the process chamber 200. By making the intake head 12 in an arc-shaped long strip and making the end of the intake head 12 protrude in the intake direction of the intake structure 1 relative to the middle of the intake head 12, when the intake head 12 is driven to rotate by the rotation driving assembly 11, the amplitude of the process gases entering the process chamber 200 through the intake ports 121 at both ends of the intake head 12 diffusing around can be reduced, so that the process gases entering the process chamber 200 through the intake head 12 can be concentrated, and then it is convenient to adjust the position of the intake head 12 in the process chamber 200.

[0054] Optionally, the plurality of intake ports 121 can be evenly spaced in the extending direction of the intake head 12. The center of the intake head 12 in its extending direction can be located on the axis of the intake main pipe 13, and the tangent line of the center of the intake head 12 in its extending direction can be perpendicular to the axis of the intake main pipe 13.

[0055] Such a design can further improve the intake uniformity of the semiconductor process chamber 200, and further improve the distribution uniformity of the process gases in the process chamber 200.

[0056] As Figure 1 、 Figures 4 - 7 shown, in an embodiment of the present invention, the intake structure 1 can further include an intake adapter 14 and an intake source pipe 15. One end of the intake source pipe 15 is used to communicate with a process gas source (not shown in the figure), and the other end of the intake source pipe 15 is communicated with the intake main pipe 13 through the intake adapter 14, and the intake main pipe 13 can rotate relative to the intake adapter 14.

[0057] In practical applications, the process gas source can be arranged outside the process chamber 200. The process gas source is used to provide process gases. The process gases provided by the process gas source can first enter the intake source pipe 15, then enter the intake adapter 14 through the intake source pipe 15, and then enter the intake main pipe 13 through the intake adapter 14. By making the intake main pipe 13 able to rotate relative to the intake adapter 14, the intake main pipe 13 can rotate relative to the process gas source, so that when the intake main pipe 13 is driven to rotate by the rotation driving assembly 11, the intake main pipe 13 can maintain communication with the process gas source.

[0058] As Figure 1 shown, optionally, the intake structure 1 may further include a rotary bearing 16 sleeved outside the intake main pipe 13 and disposed inside the intake adapter 14.

[0059] Such a design enables the intake main pipe 13 to rotate relative to the intake adapter 14 when driven to rotate by the rotary drive assembly 11.

[0060] As Figure 1 shown, optionally, the axial direction of the intake source pipe 15 and the axial direction of the intake main pipe 13 may have an included angle.

[0061] Such a design facilitates the layout of the process gas source, the intake source pipe 15, the intake adapter 14, and the intake main pipe 13 outside the process chamber 200.

[0062] Optionally, the included angle between the axial direction of the intake source pipe 15 and the axial direction of the intake main pipe 13 may be 90°.

[0063] As Figure 1 and Figures 4 - 7 shown, in an embodiment of the present invention, the intake structure 1 may further include a flow splitting component 19. The flow splitting component 19 may be located downstream of the seal adapter assembly 18 in the intake direction of the intake structure 1. The intake main pipe 13 is communicated with the intake head 12 through the flow splitting component 19. The flow splitting component 19 may include a main flow portion 191 and a plurality of branch flow portions 192. The main flow portion 191 is respectively communicated with the intake main pipe 13 and the intake head 12, and the branch flow portions 192 are respectively communicated with the main flow portion 191 and the intake head 12. The flow splitting component 19 is used for splitting and conveying the process gas into the intake head 12.

[0064] In practical applications, the process gas may enter the main flow portion 191 through the intake main pipe 13, and then directly enter the intake head 12 through the main flow portion 191, or first enter the plurality of branch flow portions 192 through the main flow portion 191 respectively, and then enter the intake head 12 through the plurality of branch flow portions 192 respectively. Such a design can improve the distribution uniformity of the process gas entering the intake head 12 inside the intake head 12, thereby improving the distribution uniformity of the process gas entering the process chamber 200 through the intake head 12 inside the process chamber 200. By making the flow splitting component 19 located downstream of the seal adapter assembly 18 in the intake direction of the intake structure 1, the flow splitting component 19 can be disposed inside the process chamber 200.

[0065] Optionally, an anti-etching coating may be provided outside the flow splitting component 19 and / or outside the intake head 12.

[0066] Such a design can protect the flow splitting component 19 and / or the intake head 12 by means of an anti-etching coating, preventing the flow splitting component 19 and / or the intake head 12 from being etched.

[0067] Optionally, the material of the anti-etching coating may include alumina ceramics.

[0068] As Figures 4 - 7 shown, in an embodiment of the present invention, the intake structure 1 may further include a telescopic driving assembly 17. The telescopic driving assembly 17 is connected to the intake head 12 through the intake main pipe 13 and is used to drive the intake main pipe 13 to move axially along the intake main pipe 13, so as to drive the intake head 12 to move axially along the intake main pipe 13.

[0069] That is to say, the telescopic driving assembly 17 can be connected to the intake head 12 by connecting to the intake main pipe 13. The telescopic driving assembly 17 can drive the intake main pipe 13 to move axially along the intake main pipe 13, so that the intake head 12 moves axially along the intake main pipe 13 as the intake main pipe 13 moves axially. In practical applications, a lower electrode assembly 203 may be provided in the process chamber 200. The lower electrode assembly 203 may include a loading member for loading the wafer 300. By means of the telescopic driving assembly 17 driving the intake main pipe 13 to move axially along the intake main pipe 13, so as to drive the intake head 12 to move axially along the intake main pipe 13, the intake main pipe 13 and the intake head 12 can be moved into or out of the process chamber, so that the intake head 12 can be close to or away from the loading member in the process chamber 200, and then the intake head 12 can be close to or away from the wafer 300 loaded on the loading member, and further the uniformity of the distribution of the process gas above the wafer 300 in the process chamber 200 can be adjusted.

[0070] In practical applications, for example, when the wafer 300 needs to be placed into the process chamber 200 from outside the process chamber 200, or when the wafer 300 needs to be removed from the process chamber 200 to outside the process chamber 200, the telescopic driving assembly 17 can drive the intake head 12 to move axially away from the loading member (as Figure 4 and Figure 5 shown), so as to facilitate the placement of the wafer 300 into the process chamber 200 or the removal of the wafer 300 from the process chamber 200. After the wafer 300 is placed into the process chamber 200, or during the semiconductor process, the telescopic driving assembly 17 can drive the intake head 12 to move axially close to the loading member (as Figure 6 and Figure 7 shown), so as to adjust the uniformity of the distribution of the process gas above the wafer 300.

[0071] Optionally, the telescopic drive assembly 17 may include a linear cylinder.

[0072] As Figure 3 shown, in an embodiment of the present invention, the sealing adapter assembly 18 may include a sealing adapter body 181 and a linear bearing 183. The linear bearing 183 is sleeved outside the intake main pipe 13 and is arranged circumferentially within the sealing adapter body 181 along the circumference of the sealing adapter body 181.

[0073] That is to say, the linear bearing 183 is arranged within the sealing adapter body 181 and is arranged circumferentially along the sealing adapter body 181. The intake main pipe 13 passes through the sealing adapter body 181 and passes through the linear bearing 183. Such a design enables the intake main pipe 13 to move axially relative to the sealing adapter body 181 when being driven by the telescopic drive assembly 17 to move axially along the intake main pipe 13.

[0074] As Figure 1 shown, in an embodiment of the present invention, the intake main pipe 13 may include a first pipe section 131, a second pipe section 132, and a telescopic pipe section 133 that can expand and contract by itself. The first pipe section 131 is used to communicate with the process gas source. The second pipe section 132 communicates with the intake head 12 and is connected to the first pipe section 131 through the telescopic pipe section 133. The sealing adapter assembly 18 is arranged outside the second pipe section 132, and the telescopic drive assembly 17 is arranged on the second pipe section 132 and is located upstream of the sealing adapter assembly 18 in the intake direction of the intake structure 1.

[0075] In practical applications, the process gas provided by the process gas source may first enter the first pipe section 131, then enter the telescopic pipe section 133 through the first pipe section 131, then enter the second pipe section 132 through the telescopic pipe section 133, and then enter the intake head 12 through the second pipe section 132. By connecting the second pipe section 132 to the first pipe section 131 through the telescopic pipe section 133 and arranging the telescopic drive assembly 17 on the second pipe section 132, the telescopic drive assembly 17 can drive the second pipe section 132 to move axially relative to the first pipe section 131 along the intake main pipe 13. For example, when the telescopic drive assembly 17 drives the second pipe section 132 to move axially along the intake main pipe 13 closer to the bearing member, the telescopic pipe section 133 can expand by itself to enable the second pipe section 132 to move axially relative to the first pipe section 131 closer to the bearing member. When the telescopic drive assembly 17 drives the second pipe section 132 to move axially along the intake main pipe 13 away from the bearing member, the telescopic pipe section 133 can contract by itself to enable the second pipe section 132 to move axially relative to the first pipe section 131 away from the bearing member.

[0076] In practical applications, the sealing adapter assembly 18 can be arranged outside the process chamber 200. By arranging the telescopic driving assembly 17 on the second pipe section 132 and making the telescopic driving assembly 17 located upstream of the sealing adapter assembly 18 in the intake direction of the intake structure 1, the telescopic driving assembly 17 can be arranged outside the process chamber 200, thus facilitating the arrangement of the telescopic driving assembly 17.

[0077] Optionally, the telescopic pipe section 133 can include a corrugated pipe.

[0078] Optionally, the rotary bearing 16 is sleeved outside the first pipe section 131, so that the first pipe section 131, the second pipe section 132 and the telescopic pipe section 133 can rotate relative to the process gas source, that is, the intake main pipe 13 can rotate relative to the process gas source.

[0079] Optionally, the rotary driving assembly 11 can be connected to the first pipe section 131. The rotary driving assembly 11 drives the first pipe section 131 to rotate, so that the telescopic pipe section 133 rotates with the rotation of the first pipe section 131, and thus the second pipe section 132 rotates with the rotation of the telescopic pipe section 133, and further drives the intake main pipe 13 to rotate.

[0080] As Figure 3 shown, optionally, the sealing adapter assembly 18 can further include a magnetic fluid sealing structure 184. The magnetic fluid sealing structure 184 is sleeved outside the intake main pipe 13 and arranged circumferentially in the sealing adapter body 181 along the sealing adapter body 181. The magnetic fluid sealing structure 184 is used for movably sealing between the sealing adapter body 181 and the intake main pipe 13.

[0081] Optionally, the sealing adapter body 181 is further used for sealing connection with the process chamber 200.

[0082] As Figure 4 and Figure 5 shown, in practical applications, the inside of the process chamber 200 is a vacuum environment, and the outside of the process chamber 200 is an atmospheric environment. By means of the magnetic fluid sealing structure 184 for movably sealing between the sealing adapter body 181 and the intake main pipe 13 and making the sealing adapter body 181 in sealing connection with the process chamber 200, the sealing adapter assembly 18 can achieve movably sealing between the intake main pipe 13 and the process chamber 200, thereby isolating the vacuum environment inside the process chamber 200 from the atmospheric environment outside the process chamber 200 through the sealing adapter assembly 18, and further sealing the process chamber 200.

[0083] The magneto - fluid sealing structure 184 may include a stable colloidal solution mixed with nano - scale solid ferromagnetic particles, a liquid base carrier fluid, and a surfactant. When a magnetic field is applied outside the magneto - fluid sealing adapter assembly 18, the magnetic particles can aggregate and arrange along the magnetic field lines, forming a multi - stage sealing structure similar to an "O - ring" shape in the axial direction of the part of the intake main pipe 13 passing through the magneto - fluid sealing structure 184. The multi - stage sealing structure similar to an "O - ring" shape can jointly act to seal between the intake main pipe 13 and the sealing adapter body 181.

[0084] As Figure 3 shown, optionally, the intake main pipe 13 may further include a third pipe section 134. The third pipe section 134 penetrates through the sealing adapter body 181. The rolling bearing 182, the linear bearing 183, and the magneto - fluid sealing structure 184 can be respectively sleeved outside the intake main pipe 13. The second pipe section 132 can be communicated with the intake head 12 through the third pipe section 134.

[0085] In practical applications, the third pipe section 134 can penetrate through the sealing adapter body 181. One end is located in the atmospheric environment outside the process chamber 200 and is communicated with the second pipe section 132, and the other end is located in the vacuum environment inside the process chamber 200 and is communicated with the intake head 12. After the process gas passes through the second pipe section 132, it can first enter the third pipe section 134, and then enter the intake head through the third pipe section 134. The third pipe section 134 and the sealing adapter body 181 can be hermetically sealed movably through the magneto - fluid sealing structure 184, so that the intake main pipe 13 and the sealing adapter body 181 can be hermetically sealed movably. The third pipe section 134 and the sealing adapter body 181 can rotate relative to each other through the rolling bearing 182, so that the intake main pipe 13 and the sealing adapter body 181 can rotate relative to each other. The third pipe section 134 and the sealing adapter body 181 can move relative to each other axially on the intake main pipe 13 through the linear bearing 183, so that the intake main pipe 13 and the sealing adapter body 181 can move relative to each other axially on the intake main pipe 13.

[0086] As Figure 3 shown, optionally, the sealing adapter assembly 18 may further include an end cap 185. The end cap 185 can be arranged at one end of the sealing adapter body 181 close to the intake head 12.

[0087] Optionally, a threaded hole may be provided at one end of the sealing adapter body 181 away from the intake head 12. By passing a screw through the threaded hole and threadedly connecting it to the process chamber 200, the sealing adapter body 181 can be connected to the process chamber 200.

[0088] In practical applications, the magneto-fluid sealing adapter assembly 18 can also provide a driving force for rotating the intake head 12. Since the intake structure 1 provided by the embodiment of the present invention requires precise control of the rotation speed of the intake head 12, by additionally providing a rotation driving assembly 11 to drive the rotation of the intake head 12, the accuracy of controlling the rotation speed of the intake head 12 can be improved.

[0089] In practical applications, the rotation speed of the intake head 12 can be adjusted according to the requirements of semiconductor processes such as etching rate, etching uniformity, and etched trench size.

[0090] In practical applications, the intake pressure and intake rate of the intake structure 1 can be adjusted so as to adapt to different semiconductor process procedures.

[0091] As Figures 4 - 7 shown, the embodiment of the present invention also provides a semiconductor process equipment, including a process chamber 200 and a plurality of intake structures 1 as provided by the embodiment of the present invention. The plurality of intake structures 1 are spaced apart in the circumferential direction of the process chamber 200.

[0092] The semiconductor process equipment provided by the embodiment of the present invention, by spacing a plurality of intake structures 1 as provided by the embodiment of the present invention in the circumferential direction of the process chamber 200, and respectively delivering process gases into the process chamber 200 by means of the plurality of intake structures 1, can improve the intake uniformity and sealing performance of the semiconductor process chamber 200, and can increase the optimization design space of the dielectric window 201 and the upper electrode assembly 202. Subsequently, the distribution uniformity of the process gases in the process chamber 200 can be improved, and the optimization design space for the etching results can be increased, thereby improving the semiconductor process results.

[0093] As Figure 4 and Figure 6 shown, at least a part of the sealing adapter assembly 18 can be embedded in the top wall of the process chamber 200, and the intake head 12 is located inside the process chamber 200.

[0094] As Figures 4 - 7 shown, in an embodiment of the present invention, each intake structure 1 can be inclined relative to the process chamber 200, so that the intake heads 12 of the plurality of intake structures 1 approach the center of the process chamber 200.

[0095] Such a design can enable the process gas entering the process chamber 200 through the intake heads 12 of the plurality of intake structures 1 to concentrate at the center of the process chamber 200. The carrier component for carrying the wafer 300 in the process chamber 200 and the position of the wafer 300 in the semiconductor process are in the middle of the process chamber 200. Therefore, by enabling the process gas entering the process chamber 200 to concentrate at the center of the process chamber 200, the process gas entering the process chamber 200 can be concentrated above the wafer 300 and evenly distributed above the wafer 300, thereby improving the semiconductor process results.

[0096] In practical applications, when assembling the intake structure 1 and the process chamber 200, the inclination angle of the intake structure 1 relative to the process chamber 200 can be adjusted.

[0097] Combined Figures 8 - 11 , when comparing the speeds of the process gases on both sides of the central symmetry of the process chamber 200 during the intake of the semiconductor process equipment in the prior art (as shown in Figure 8 and Figure 9 ) with the speeds of the process gases on both sides of the central symmetry of the process chamber 200 during the intake of the semiconductor process equipment provided by the embodiments of the present invention (as shown in Figure 10 and Figure 11 ), the uniformity of the speeds of the process gases on both sides of the central symmetry of the process chamber 200 during the intake of the semiconductor process equipment in the prior art is poor, while the uniformity of the speeds of the process gases on both sides of the central symmetry of the process chamber 200 during the intake of the semiconductor process equipment provided by the embodiments of the present invention is good.

[0098] Combined Figures 12 - 14 and Table 1 below, when comparing the speeds (such as the gray line shown in Figure 12 ), pressures (such as the gray line shown in Figure 13 ) and densities (such as the gray line shown in Figure 14 ) of the process gases on both sides of the central symmetry of the process chamber 200 during the intake of the semiconductor process equipment in the prior art with the speeds (such as the black line shown in Figure 12 ), pressures (such as the black line shown in Figure 13 ) and densities (such as the black line shown in Figure 14 ) of the process gases on both sides of the central symmetry of the process chamber 200 during the intake of the semiconductor process equipment provided by the embodiments of the present invention, the uniformity of the speeds, pressures and densities of the process gases on both sides of the central symmetry of the process chamber 200 during the intake of the semiconductor process equipment in the prior art is poor, while the uniformity of the speeds, pressures and densities of the process gases on both sides of the central symmetry of the process chamber 200 during the intake of the semiconductor process equipment provided by the embodiments of the present invention is good.

[0099]

[0100] Table 1 (Data Analysis and Comparison Table of Airflow Field)

[0101] In summary, the intake structure 1 and the semiconductor processing equipment provided by the embodiments of the present invention can improve the intake uniformity and sealing performance of the semiconductor processing chamber 200, and can increase the optimization design space of the dielectric window 201 and the upper electrode assembly 202. Thus, the distribution uniformity of the process gas in the process chamber 200 can be improved, and the optimization design space for the etching result can be increased, thereby improving the semiconductor process result.

[0102] It can be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered within the protection scope of the present invention.

Claims

1. An intake structure for a semiconductor process chamber, characterized in that, The intake structure includes an intake main pipe, an intake head, and a sealing adapter assembly; The intake main pipe is in communication with the intake head to convey process gas into the process chamber through the intake head; The sealing adapter assembly is disposed outside the intake main pipe. The intake main pipe and the intake head are movably sealed between the intake main pipe and the process chamber through the sealing adapter assembly so as to be movable relative to the process chamber; The intake structure further includes a rotation driving assembly. The rotation driving assembly is connected to the intake head through the intake main pipe and is configured to drive the intake head to rotate by driving the intake main pipe to rotate.

2. The intake structure according to claim 1, wherein The sealing adapter assembly includes a sealing adapter body and a rolling bearing. The rolling bearing is sleeved outside the intake main pipe and is circumferentially disposed inside the sealing adapter body along the sealing adapter body.

3. The intake structure according to claim 1, characterized in that, The intake head is in an arc-shaped long strip shape. The end of the intake head protrudes relative to the middle of the intake head in the intake direction of the intake structure. The intake head is provided with a plurality of intake ports, and the plurality of intake ports are spaced apart in the extending direction of the intake head.

4. The intake structure according to claim 1, characterized in that The intake structure further includes an intake adapter and an intake source pipe. One end of the intake source pipe is configured to communicate with a process gas source, and the other end of the intake source pipe is communicated with the intake main pipe through the intake adapter. The intake main pipe is capable of rotating relative to the intake adapter.

5. The intake structure according to claim 1, characterized in that, The intake structure further includes a flow splitting component. The flow splitting component is located downstream of the sealing adapter assembly in the intake direction of the intake structure. The intake main pipe is communicated with the intake head through the flow splitting component. The flow splitting component includes a main flow portion and a plurality of branch flow portions. The main flow portion is respectively communicated with the intake main pipe and the intake head, and the branch flow portions are respectively communicated with the main flow portion and the intake head. The flow splitting component is configured to split and convey the process gas into the intake head.

6. The intake structure according to any one of claims 1-5, characterized in that, The intake structure further includes a telescopic driving assembly. The telescopic driving assembly is connected to the intake head through the intake main pipe and is configured to drive the intake head to move axially of the intake main pipe by driving the intake main pipe to move axially.

7. The intake structure according to claim 6, characterized in that, The sealing adapter assembly further includes a sealing adapter body and a linear bearing. The linear bearing is sleeved outside the intake main pipe and is circumferentially disposed inside the sealing adapter body along the sealing adapter body.

8. The intake structure according to claim 6, characterized in that, The intake main pipe includes a first pipe section, a second pipe section, and a telescopic pipe section capable of telescoping itself. The first pipe section is configured to communicate with a process gas source. The second pipe section is communicated with the intake head and is communicated with the first pipe section through the telescopic pipe section. The sealing adapter assembly is disposed outside the second pipe section. The telescopic driving assembly is disposed on the second pipe section and is located upstream of the sealing adapter assembly in the intake direction of the intake structure.

9. A semiconductor process equipment, characterized in that, It includes a process chamber and a plurality of intake structures as described in any one of claims 1-8. The plurality of intake structures are spaced apart circumferentially inside the process chamber.

10. The semiconductor processing equipment according to claim 9, wherein, Each of the intake structures is disposed obliquely with respect to the process chamber, such that the intake heads of the plurality of intake structures approach the center of the process chamber.

11. The semiconductor processing equipment according to claim 9, wherein At least a part of the sealing adapter assembly is embedded in the top wall of the process chamber, and the intake head is located inside the process chamber.

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